Datasheet IPA50R650CE - Infineon Technologies

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Jul 12, 2016 - CoolMOS™ is a revolutionary technology for high voltage power ..... automotive, aviation and aerospace
IPA50R650CE

MOSFET 500VCoolMOSªCEPowerTransistor

PG-TO220FP

CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket.

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications

Drain Pin 2

Gate Pin 1

Applications

Source Pin 3

PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters Parameter

Value

Unit

VDS @ Tj,max

550

V

RDS(on),max

0.65



ID

9

A

Qg,typ

15

nC

ID,pulse

19

A

Eoss @ 400V

1.69

µJ

Type/OrderingCode

Package

Marking

IPA50R650CE

PG-TO 220 FullPAK

5R650CE

Final Data Sheet

1

RelatedLinks see Appendix A

Rev.2.3,2016-07-12

500VCoolMOSªCEPowerTransistor IPA50R650CE

TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Final Data Sheet

2

Rev.2.3,2016-07-12

500VCoolMOSªCEPowerTransistor IPA50R650CE

1Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings Parameter

Symbol

Continuous drain current1)

Values

Unit

Note/TestCondition

9 5.7

A

TC = 25°C TC = 100°C

-

19

A

TC=25°C

-

-

102

mJ

ID =2.3A; VDD = 50V

EAR

-

-

0.15

mJ

ID =2.3A; VDD = 50V

Avalanche current, repetitive

IAR

-

-

2.3

A

-

MOSFET dv/dt ruggedness

dv/dt

-

-

50

V/ns

VDS=0...400V

Gate source voltage

VGS

-20 -30

-

20 30

V

static; AC (f>1 Hz)

Power disspiation (Full PAK)

Ptot

-

-

27.2

W

TC=25°C

Operating and storage temperature

Tj,Tstg

-40

-

150

°C

-

Mounting torque

-

-

-

50

Ncm M2.5 screws

IS

-

-

4.0

A

TC=25°C

IS,pulse

-

-

19.0

A

TC = 25°C

dv/dt

-

-

15

V/ns

VDS=0...400V,ISD