CoolMOS⢠is a revolutionary technology for high voltage power ..... automotive, aviation and aerospace applications or
IPW50R190CE,IPP50R190CE
MOSFET 500VCoolMOSªCEPowerTransistor
PG-TO247
PG-TO220 tab
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation whilerepresentingacostappealingalternativecomparedtostandard MOSFETsintargetapplications.Theresultingdevicesprovideallbenefits ofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse. Extremelylowswitchingandconductionlossesmakeswitching applicationsevenmoreefficient,morecompact,lighterandcooler.
Drain Pin 2
Gate Pin 1
Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
Source Pin 3
Applications PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.PCSilverbox,LCD&PDPTVandLighting.
Table1KeyPerformanceParameters Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
0.19
Ω
ID
24.8
A
Qg.typ
47.2
nC
ID,pulse
63
A
Eoss@400V
4.42
µJ
Type/OrderingCode
Package
IPW50R190CE
PG-TO 247
IPP50R190CE
PG-TO 220
Final Data Sheet
Marking 5R190CE
1
RelatedLinks see Appendix A
Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor IPW50R190CE,IPP50R190CE
TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor IPW50R190CE,IPP50R190CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
24.8 15.7
A
TC = 25°C TC = 100°C
-
63
A
TC=25°C
-
-
339
mJ
ID =7.7A; VDD = 50V
EAR
-
-
0.51
mJ
ID =7.7A; VDD = 50V
Avalanche current, repetitive
IAR
-
-
7.7
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...400V
Gate source voltage
VGS
-20 -30
-
20 30
V
static; AC (f>1 Hz)
Power dissipation (non FullPAK) TO-247, TO-220
Ptot
-
-
152
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
-
-
-
60
Ncm M3 and M3.5 screws
IS
-
-
17.6
A
TC=25°C
Diode pulse current
IS,pulse
-
-
63.0
A
TC = 25°C
Reverse diode dv/dt3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD
