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Greetings On behalf of the entire AVS community, we welcome you to Tampa and the 59th AVS International Symposium and Exhibition. We wish you a productive and stimulating week filled with discussions and new insights as you enjoy the technical program and related activities. This year, Dr. Joel Kostka, Georgia Institute of Technology, will present the plenary lecture entitled “The BP Oil Spill in the Gulf of Mexico: Are Microbes Helping to Clean up the Mess?” (Monday, noon). Dr. Kostka will provide us with a visionary platform that brings together aspects of multiple surface science programs with emphasis on Biointerfaces, Biofilms and Biofouling. AVS is committed to developing a fundamental understanding of surfaces and interfaces through core programs in electronic and magnetic materials, micro- and nano-electromechanical systems, nano-electronics, nanometer science and technology, plasma science and technology, surface science to inter-facial phenomena, surface engineering, thin films, and vacuum science and technology. We are certain that you will find new insights and knowledge as you enjoy these foundational sessions. Enjoy! In an effort to bring emphasis to prominent research issues across our broader core programs, a number of focus topics have been organized and will be featured in the symposium including Actinides and Rare Earths, Biointerphases, Electron Transport in Low Dimensional Materials, Energy Frontiers, Graphene and Related Materials, Helium Ion Microscopy, In Situ Spectroscopy and Microscopy, Nanomanufacturing Science and Technology, Transparent Conductors and Printable Electronics, Oxide Heterostructures, Scanning Probe Microscopy, Spectroscopic Ellipsometry, and Tribology. Here you can enjoy the benefit of multidisciplinary perspectives that are the strength of AVS. Engage your own perspectives as well! The end result is a program that consists of ~140 oral sessions, more than 1,300 talks, over 250 invited speakers, and two evenings of poster presentations where stimulating and passionate scientific discussions will be facilitated with low temperature libations. Many of us will also get a chance to visit the Exhibition Hall where ever-increasing numbers of exhibitors will be displaying their latest technology and equipment that make cutting edge science and the latest applications possible. If this is your first time at an AVS meeting, we want to invite you to be a regular member of the AVS community. Stop by the division business meetings (most are on Tuesday in the late afternoon); get involved with next year’s programming by talking to Jim Fitz-Gerald, who will Chair the 60th AVS Symposium in Long Beach, CA; attend the awards ceremony on Wednesday evening; stop by the AVS Publication Booth to talk to the Staff and the Editors; take advantage of your membership and become engaged in the dynamic and diverse research community that is AVS. We encourage all participants to submit their work to our internationally recognized scholarly Journal of Vacuum Science and Technology A & B (http://avspublications.org/jvsta/or http://avspublications.org/jvstb/). The only way to find out what AVS has to offer is to experience the AVS community and there is no better time to start than this week! Thank you for your participation and contribution to this year’s AVS Symposium and thanks to all the dedicated volunteers and the outstanding AVS staff who have worked to create this exciting program.
Enjoy the week!
Charles R. (Chip) Eddy, Jr. Program Chair U.S. Naval Research Lab.
James M. “Fitz” Fitz-Gerald Vice-Program Chair University of Virginia
TABLE OF CONTENTS 5K Run Information and Registration Form ................................66 Ask the Experts ............................................................................39 AVS Co-sponsored/endorsed 2013 Topical Conferences..........267 AVS Store ....................................................................................23 AVS Membership Information ................................................8, 11 AVS Publication Information ................................................68–71 ASTM E-42/ASSD Workshop.....................................................15 Author Index ......................................................................188–212 AVS Awardees List - Past and Present ..................................26–27 AVS Awardees - Current .......................................................29–32 AVS Awards Ceremony and Reception Invitation ......................28 AVS Corporate Members.............................................................25 AVS Officers and Directors ...........................................................7 AVS Sponsors ..............................................................................24 Biomaterial Interfaces Division Plenary Session..............................14 Career Center Information ...........................................................20 Companion Tours Information...............................................62–65 Division Awards.....................................................................34–35 EMPD Industrial Forums .............................................................15 Equipment Exhibitors and Exhibit Information.....................36–37 Exhibitor Technology Spotlight Sessions ....................................38 EXHIBIT PROGRAM.....................................................213–266 Floor Plan – Tampa Convention Center...........................13, 57, 72 Floor Plan – Tampa Marriott Waterside Hotel & Marina......12, 56 Future Symposia Locations........................................................268 Ground Transportation Information.............................................10 Hotel Information.........................................................................10 Job Information Forum ................................................................18 JVST Manuscript Publication Information.....................................8 JVST Writer’s Workshop .............................................................18 Meeting and Special Events ...................................................58–59 Morton M. Traum Presentation....................................................14 Parking Information .....................................................................10 Plenary Lecture - Symposium......................................................40 Professional Leadership Workshop and TownHall Meeting .16–17 Program Committee .......................................................................6 QSA14..........................................................................................14 Recording Equipment Policy .........................................................9 Student Chapter Information........................................................19 Student Activities .........................................................................33 Session Overview...................................................................53–55 Social Media Information ............................................................22 SHORT COURSE INFORMATION & FORM......................60–61 Short Courses Daily Special Events........80, 101, 131, 153,181 SYMPOSIUM REGISTRATION FORM..................................3 Symposium Registration, Cancellation, Lost Badge Procedures.........8 TECHNICAL SESSIONS ..................................................78–187 Technical Program Description ..........................................41–52 Authors Index ...............................................................188–212 Daily Special Events ................................76, 80, 101, 131, 153 Key to Session Codes .............................................................73 Program-at-a-Glance .................................................4–5,74–75 Sunday, Oct. 28 ......................................................................78 Monday morning, Oct. 29 ......................................................82 Monday afternoon, Oct. 29.....................................................91 Tuesday morning, Oct. 30 ....................................................102 Tuesday afternoon, Oct. 30 ..................................................113 Wednesday morning, Oct. 31 ...............................................132 Wednesday afternoon, Oct. 31 .............................................143 Thursday morning, Nov. 1 ...................................................155 Thursday afternoon, Nov. 1..................................................166 Friday morning, Nov. 2 ........................................................183 Tutorials .......................................................................................14
SYMPOSIUM
HQ HOTEL
Tampa Convention Center 333 S. Franklin Street Tampa, FL 33602
Tampa Marriott Waterside 700 South Florida Ave. Tampa, FL 33602
AVS NATIONAL OFFICE 125 Maiden Lane, 15th Floor New York, NY 10038 212-248-0200 FAX: 212-248-0245
[email protected] www.avs.org
SYMPOSIUM REGISTRATION HOURS Sun. Mon. Tues.
2:00 p.m. to 6:00 p.m. Wed. 7:30 a.m. to 5:00 p.m. 7:30 a.m. to 5:00 p.m. Thurs. 7:30 a.m. to 5:00 p.m. 7:00 a.m. to 5:00 p.m. Fri. 7:30 a.m. to 10:00 a.m.
SHORT COURSE REGISTRATION HOURS Sun. Mon. Tues
2:00 p.m. to 6:00 p.m. Wed. 7:30 a.m. to 5:00 p.m. 7:30 a.m. to 5:00 p.m. Thurs. 7:30 a.m. to 5:00 p.m. 7:00 a.m. to 5:00 p.m. Fri. 7:30 a.m. to 9:30 a.m.
SYMPOSIUM REGISTRATION FEES Pre-registration (Pre-Paid) Member*** $540.00 Non-Member** $600.00 Student Member*** * $190.00 Student Non-Member** * $230.00 Early Career Member*** * $285.00 Early Career Non-Member** *$335.00 One day $300.00 Exhibits Only Free
Registration (On-Site) $635.00 $710.00 $225.00 $270.00 $335.00 $395.00 $350.00 $20.00
Pre-registration deadline: October 8, 2012 AVS tax ID Number: 04-2392373 *A bonafide full-time university student must present student I.D. Part-time students do not qualify for a student rate. If your highest degree is within 5 years you may register as an Early Career. **Non-member registration entitles you to a complimentary 2013 electronic AVS membership— report to the AVS Booth 733. ***Full Week, Student, and Early Career member registration fee INCLUDES your 2013 membership renewal dues. For more information report to the AVS Booth 733.
EXHIBIT SHOW HOURS Tuesday, October 30 Wednesday, October 31 Thursday, November 1
10:00 a.m. to 5:30 p.m. 10:00 a.m. to 4:30 p.m. 10:00 a.m. to 2:00 p.m.
OFFICE LOCATIONS Symposium Registration Short Course Registration Staff Office/Press AVS Store Career Center Publications Booth Presenters Preview
Lobby Area Lobby Area 3 Exhibit Hall Booth 733 Exhibit Hall Booth 733 Exhibit Hall Booth 728 1
AVS 59th INTERNATIONAL SYMPOSIUM & EXHIBITION
Tampa, FL, USA October 28-November 2, 2012 SYMPOSIUM REGISTRATION FORM
Please print clearly
________________ __________________________________ ______________________________ First Name
Last Name
Job Title
_______________________________ Organization/University Affiliation
_________________________________________________ Street Address
_______________________ _______ ___________________ ____________________________ City
State
Postal Code (required)
Country
______________ ______________ ____________________________
________________
Telephone Number
Year of highest degree
Fax Number
E-mail Address (required field)
Please circle one number from each section below. 1. EMPLOYMENT 1A. Industry 1B. Government/Research Institute 1C. Academia 1D. Not for Profit 1E. Consultant 1F. Other (specify)
(please check appropriate fee)
PRE-REGISTRATION
ON-SITE
Member* Full Week Non-Member** Full Week Student Member* Student Non-Member** Early Career Member (within 5 years of highest degree)*
A) B) C) D) E) F)
A) B) C) D) E) F)
2. 2A. 2B. 2C. 2D. 2E.
AVS Honorary Member* AVS Emeritus Member*
H) Q)
$0 $0
(Sunday) Nanomanufacturing Tutorial
T)
$100
T)
$115
U)
$75
U)
$85
X)
$0
X)
$20
2F. 2G. 2H. 2I. 2J. 2K. 2L. 2M. 3. 3A. 3B. 3C. 3D. 3E. 3F. 3G. 3H. 3I. 3J. 3K 3L. 3M. 3N.
PRINCIPLE AREA OF INTEREST
Advanced Surface Engineering Applied Surface Science Biomaterial Interfaces/Plenary Electronic Materials & Processing
Magnetic Interfaces & Nanostructures MEMS and NEMS Manufacturing Science & Technology Nanometer-Scale Science & Technology Plasma Science & Technology Surface Science Thin Film Vacuum Technology Exhibit
Early Career Non-Member (within 5 yrs of highest degree)*
$540 $600 $190 $230 $285 $335 $300
One Day (please circle day) J) Sunday
K) Monday
L) Tuesday
M) Wednesday
(Sunday) Nanomanufacturing (Student)
EXHIBITS ONLY
N) Thursday
$635 $710 $225 $270 $335 $395 $350
O) Friday
VOLUNTARY CONTRIBUTION: $________ Quantitative Surface Analysis (Full) Quantitative Surface Analysis (Student)
Y) Z)
$115 $70
Total amount paid
$ ________________________
*MEMBERS: AVS Full Week, Student, Early Career, Honorary, and Emeritus Member registrant registration fees INCLUDE your 2013 AVS Membership Renewal Dues. You will receive a membership renewal confirmation following the Symposium.
FOCUS TOPICS **NON-MEMBERS: AVS Full Week, Student, and Early Career Non-Member registrants will receive an Actinides & Rare Earths automatic complimentary 2013 electronic AVS membership. Biofilms & Biofouling Biointerphases Report to the AVS Store (Exhibit Hall-Booth #733) with any additional questions on the above. Electron Transport at the Nanoscale 4. Job Description Energy Frontiers 4A. Corporate Officer 4G. Professor Graphene and Related Materials 4B. R&D Executive 4H. Postdoctoral Fellow Helium Ion Microscopy 4C. Project Manager 4I. Student In Situ Microscopy & Spectroscopy 4D. Staff Scientist 4J. Group Leader Nanomanufacturing 4E. Sales/Marketing 4K. Technician Oxide Heterostructures 4F. Engineer 4L. Other (specify) _______________ Scanning Probe Microscopy Spectroscopic Ellipsometry Transparent Conductors METHOD OF PAYMENT (Only checks, credit cards, or money orders will be accepted/NO CASH) Tribology Check enclosed (payable to AVS in U.S. dollars drawn on a U.S. bank)
AVS, c/o Experient P.O. Box 4088, Frederick, MD 21705 Fax: 301-694-5124, www.avs.org FOR OFFICE USE ONLY Amount received _________ Check#
_________
Charge my
MasterCard
Visa
American Express
Card number _______________________________________________________________________ Expiration date _________________ Signature __________________________________________
Date Received ___________ Cashier’s initials ___________
AVS Tax I.D. number is 04-2392373 Please send registration form and proper payment by October 8, 2012
2012 Technical Program Room/
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Day SuA
MoM
MoA
TuM
AC+MI+SS+TF OX+EM+MI+ NS+TF Electronic Structure and Structure–Property Relationships in Spectroscopy of Epitaxial Oxide Actinides Interfaces AC+TF+SS+MI OX+SS+TF+MI Actinides and Chemistry of Rare Earths: Oxide Surfaces Thin Films and and Interfaces Surface Science
EM+TF+OX +GR High-k Dielectrics for MOSFETs I
MN+AS TF NS GR+EM+NS+ VT Characterization ALD Enabled Nanoparticles PS+SS+TF Vacuum Gauging of Surfaces and Applications and Quantum and Metrology Graphene Interfaces in Structures Growth MEMS and NEMS EM+TF+OX TF+EN NS+SP GR+EM+ET+ MN VT Multi-scale +GR ALD for Energy Nanopatterning NS+TF Gas Flow, Leaks, Interactions of Mtls and Permeation and High-k Electronic and Fabrication at Nanolithography Properties and Mass Analysis Dielectrics for the Micro- and MOSFETS II Charge Transport Nano-scale AC+EN IS+AS+SS+EN EM MN TF NS+EN GR+AS+EM+ VT Energetic Mtls In Situ Spectro- Electrical Testing Optomechanics ALD Reactions One-Dimensional MI+MN Pumping, Gas Issues for Nuclear scopic Studies of and Defects in and Photonic and Film Nanowires and Optical, Magnetic, Dynamics and Power: Fuels, Catalysis and GasIII-V’s MEMS and Properties Nanotubes Modeling Mechanical and Corrosion and Solid Reactions NEMS Thermal Properties Waste Disposal
EN+NS Nanostructured Solar Cells
EN+TF Chalcogenide Solar Cells I
EN+TF Chalcogenide Solar Cells II
TuL
TuA
MI+EN+BI Fundamental Problems in Magnetism
IS+AS+BI+ET+ GR+NS In Situ Studies of Organic and Soft Materials and In Situ Microscopy
EM Materials and Processes for Advanced Interconnects
TF+AS Modeling and Analysis of Thin Films
MI Topological Insulators and Rashba
IS+AS+OX+ET In Situ Characterization of Solids: Film Growth, Defects, and Interfaces
EM+TF Hybrid Electronic Materials and Interfaces
TF Thin Films for Encapsulation, Packaging, and Biomedical Devices
MI+OX Spintronics, Magnetoelectric, Multiferroics
TC+EM+AS Printable and Flexible Electronics
MI+SP+AS Emerging Probes in Magnetic Imaging, Reflectometry and Characterization
TC+EM+AS+ TF+EN Transparent Conductors and Devices
VT TF2 NS+EN+GR GR+AS+NS+SP EN+TF +SS Accelerator and ALD for Hybrid Nanomaterials in Thin Film, Graphene Films and Two and Three Ultra-Clean Heterostructured, Characterization Vacuum Systems Bioapplications Dimensions and Organic Incl. Microscopy Solar Cells and Spectroscopy
TuP
WeM
TF+SE+NS Glancing Angle Deposition (GLAD)
NS+AS+SS+SP GR+AS+BI+PS VT+AS+SS +SS Nanoscale Surface Analysis Graphene Surface Catalysis and and Vacuum Chem., Functional- Manufacturing Surface ization, Biological & for Accelerators Chemistry Sensor Applications
EN+PS Plasmas for Photovoltaics and Energy Applications
NS Nanophotonics and Plasmonics
EN+TF Thin Films for Energy Applications
WeL
WeA
ThM
EM+OX TF+MI TF+AS Oxides and Thin Films for Thin Films: Dielectrics for Memory and Growth and Novel Devices Data Storage Characterizationand Ultra-dense I Memory EM TF+EM+SE+NS TF+NS+EM Processing for Nanostructuring Thin Films: Ultra Low Power Thin Films Growth and Electronics + CharacterizationSemiconductor II Heterostructures I
NS Nanoscale Imaging and Microscopy
GR+AS+EM+ LB+EM+GR+ NS+SS MN+TR Dopants & Defects Select Topics in in Graphene; Surface and Graphene Interfaces w/Other Materials Interface Science GR+AS+NS+SS EM+SS+AS+NS Graphene Nanoelectronic Nanostructures Interfaces, Materials, and Devices
EN+NS Batteries and Fuel Cells
ThL
ThA
EN+NS EM+MI Thermophotovolt Semiconductor aics, Heterostructures Thermoelectrics II + Heusler and Plasmonics Alloys
TF+EM+SS TF+AS+SS Applications of Thin Films: Self-Assembled Growth and Monolayers and CharacterizationLayer-by-Layer III Assemblies
GR+EM+NS+ EM+TF+AS EN+AS SS+TF Growth and Characterization Beyond Graphene: Characterization of Energy BN & Other 2D of Group IIIMaterials and Elect. Mtls; 2D Nitride Materials Systems Heterostructures
ThP
GR+EM+ET+ EM+NS MS+NS Low-Resistance Contacts to Graphene Device Physics and Nanoelectronics Applications
FrM
4
EN+SS Photocatalysis and Solar Fuels
at a Glance 16
NM+AS+MS Metrology and Environmental Issues in Nanomanufacturing NM+NS+MS+ EM ALD & Scalable Processes for Nanomanufacturing NM+MS All Invited Session: Challenges of Nanomanufacturing from an Industrial Perspective
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EL+TF+AS+ EM+SS+PS+ EN+NM
SE+NS SS AS Nonequillibrium Nanostructured Quantitative Thin Films and Spectroscopic Ellip- Surface Analysis and Nonlinear Coatings I: sometry for PhotoProcesses – Part 1 voltaics & SemiconInterface ductor Mfg. Aspects EL+TF+BI+AS SE+NS SS AS +EM+SS Nanostructured Surface Quantitative Spectroscopic EllipThin Films and Dynamics Surface Analysis sometry: From Coatings II: – Part 2 Organic & Biological Multifunctional Systems to Inorganic Properties Thin Films SE+PS SS TR+BI AS+BI Self Healing Coat- Practical Surface Pulsed Plasmas Surface ings, Bio-Inspired in Surface Reactivity of Analysis Design, and FricEngineering Oxides tional Properties of Biological Materials
23 BP+AS Biomaterials Plenary Bioimaging: In Vacuo, In Vitro, In Vivo BI Surfaces to Control Cell Response
24
25
PS+EM Atmospheric Plasma Processing and Micro Plasmas
PS Advanced FEOL/Gate Etching 1
BI PS+BI Cell-Surface Applications of (MultiInteractions: phase) Atmospheric High Plasmas (incl. Throughput Medicine & BioMethodologies logical Applications) PS1 BI+SS+AS Plasma Biomolecules at Diagnostics, Interfaces Sensors and Control 1
Central Hall
West Hall
PS2 Plasma Modeling
EW Exhibitor Technology Spotlight
PS2 Advanced FEOL/Gate Etching 2
EW Exhibitor Technology Spotlight SP+AS+BI+ET +MI+NS Advances in Scanning Probe Imaging
TR Molecular Origins of Friction and Wear
AS+BI
SS+NS
Surface Analysis of Mtls Reactivity of w/Vibrational Techniques Size and Shape (2:00-3:20pm) / Selected Multi-Technique Nanoparticles Analysis (4:00-6:00 pm)
SE+PS Atmospheric Pressure Plasmas
BI+AS Characterization of Biointerfaces
PS1 Plasma Deposition and Plasma Enhanced ALD
EW Exhibitor Technology Spotlight
PS2 Plasma Surface Interaction during Plasma Etching POSTER SESSIONS (AS, BI, EL, IS, MN, NM, OX, SE, SS, TR, VT)
SP+AS+BI+ET +MI+NM+NS+ SS+TF
Probe-Sample Interactions, NanoManipulation and Fabrication
TR+SE Tribology and Wear of LowFriction Coatings and Materials
AS
Surface Analysis of Biological Mtls w/Vibrational Techniques (8:00-10:00am) / 3D Imaging – Part 1 (10:40am-12:00pm)
SS Chemisorption on Metallic Surfaces
SS+OX Synthesis and Characterization of Oxides
BI+SS+NS PS+TC PS Bio/Nano Atmospheric Advanced Interfaces with Plasma Processing BEOL/Interconn Applications in for PV, Flexible ect Etching Biomedicine and Electronics (incl. Energy R2R)
EW Exhibitor Technology Spotlight EW Exhibitor Technology Spotlight
SP+AS+BI+ET +MI+TF Emerging Instrument Formats
HI+AS+NS Basics of Helium Ion Microscopy
ET+NS+EM HI+AS+BI+NS Electron Imaging and Transport at the Lithography Nanoscale: with the Helium Nanowires and Ion Microscope Junctions
AS+NS+SS+TF 3D Imaging - Part 2 (2:00-3:20 pm) / Advanced Data Analysis & Instrument Control (4:00-6:00 pm)
AS Applications of Large Cluster Ion Beams _ Part 1
SS Catalysis on Metals and Alloys
SS+EM Semiconductor Surfaces
BN+AS Bioimaging
SS+EN+OX Catalysis and Photocatalysis on Oxides
SS Molecular Films: Chirality & Electronic Features
MB+BI Biofilms and Biofouling in Medicine
PS1 Plasma Diagnostics, Sensors and Control 2 PS1 Plasma Processing for Disruptive Technologies (NVM, TSV, etc.)
EW Exhibitor Technology Spotlight
PS2 Plasma Surface Interactions during PECVD and Plasma Surface PS2 Low Damage Processing
EW Exhibitor Technology Spotlight ET+SS+GR+SP Electron Transport at the Nanoscale: Molecules and Defects
AS
SS+NS
LargeClusterIonBeams- Surface Science Part 2 (2:00-3:20 pm) / of Surface Analysis w/ Nanostructures Synchrotron Techniques (3:40-5:40 pm)
MB+BI Marine Biofouling
SS Liquid/Surface Interactions
PS Plasma Sources
POSTER SESSIONS (EM, EN, GR, HI, MI, NS, PS, TC, TF) ET+SS+GR+SP Electron Transport at the Nanoscale: Development of Theories and Techniques
AS+TF+VT Surface Analysis using Synchrotron Techniques
5
2012 PROGRAM COMMITTEE Charles (Chip) R. Eddy, Jr., Program Chair University of Florida James M. Fitz-Gerald, Vice-Program Chair Naval Research Lab. AVS Conference Secretary Lynn Pizzo AVS Event Planner Della Miller AVS Managing Director/Registration Coordinator Yvonne Towse AVS Program Editor/Member Services Administrator Angela Klink Companions Program Coordinator Marilyn Ruzic
Advanced Surface Engineering Division Chair: Mitterer, Christian, Univ of Leoben, Austria Barankova, Hana, Uppsala University, Sweden Broitman, Esteban, Linköping University, Sweden Patscheider, Joerg, EMPA, Switzerland Robbie, Kevin, Queen's University, Canada Voevodin, Andrey, Air Force Research Laboratory
Applied Surface Science Division Chair: Smentkowski, Vincent, GE Global Res Ctr Allen, Stephanie, The University of Nottingham, UK Artyushkova, Kateryna, University of New Mexico Gilmore, Ian, National Physical Laboratory, UK Haasch, Richard, U of Illinois at Urbana Champaign Herrera-Gomez, Alberto, UAM-Azcapotzalco and CINVESTAV-Queretaro, Mexico Ohlhausen, James, Sandia National Laboratories Pachuta, Steven, 3M Company Pugmire, David, Los Alamos National Laboratory Roy, Debdulal, National Physical Laboratory, UK, UK of Great Britain and Northern Ireland Suzer, Sefik, Bilkent University, Turkey Szakal, Christopher, NIST Walker, Amy, University of Texas at Dallas
Biomaterial Interfaces Division and Biomaterials Plenary Session Chair: Alexander, Morgan, Univ of Nottingham, UK Belu, Anna, Medtronic, Inc. Gamble, Lara, University of Washington Hanley, Luke, University of Illinois at Chicago Kingshott, Peter, Swinburne Univ of Tech, Australia Leggett, Graham, University of Sheffield, UK McArthur, Sally, Swinburne Univ of Tech, Australia Meagher, Laurence, CSIRO Matls Sci & Eng, Australia Reimhult, Erik, BOKU Wien, Austria Richter, Ralf, CIC biomaGUNE & MPI for Intelligent Systems, Spain Rosenhahn, Axel, Karlsruhe Inst of Tech, Germany Zauscher, Stefan, Duke University
Electronic Materials & Processing Division Chair: Muscat, Anthony, University of Arizona Ayers, John, University of Connecticut Conley, John, Oregon State University Dietz, Nikolaus, Georgia State University Durbin, Steve, University at Buffalo Feenstra, Randall, Carnegie Mellon University Filler, Michael, Georgia Institute of Technology Han, Sang M., University of New Mexico Hilton, Jessica, Omicron NanoTechnology, USA Hinkle, Christopher, University of Texas at Dallas Kim, Hyun Jung, NASA Langley Research Center Kim, Jiyoung, The University of Texas at Dallas King, Sean, Intel Corporation Kummel, Andrew, University of California San Diego
Linford, Matthew, Brigham Young University Liu, Feng, University of Utah Mayer, Theresa, Penn State University McGuire, Gary, International Technology Center Opila, Bob, University of Delaware Porter, Lisa M., Carnegie Mellon University Sah, Ram Ekwal, Fraunhofer Institute, Germany Schultz, Brian, University of California, Santa Barbara Tutuc, Emanuel, University of Texas at Austin Vitale, Steven, MIT Lincoln Laboratory Vogel, Eric, Georgia Institute of Technology Williams, Michael, Clark Atlanta University Zhang, Enxia, Vanderbilt University Zollner, Stefan, New Mexico State University
Magnetic Interfaces & Nanostructures Division Chair: Tobin, James, Lawrence Livermore Natl Lab Caruso, Anthony, University of Missouri-Kansas City Clavero, César, College of William and Mary Fischer, Peter, Lawrence Berkeley National Lab Gai, Zheng, Oak Ridge National Laboratory Jiang, Sam, Argonne National Laboratory Lauter, Valeria, Oak Ridge National Laboratory Lukaszew, Rosa Alejandra, College of William and Mary Mankey, Gary, University of Alabama Mewes, Tim, University of Alabama Ohldag, Hendrik, SLAC Natl Accelerator Laboratory Pappas, David, NIST Szulczewski, Greg, The University of Alabama Vescovo, Elio, Brookhaven National Laboratory Wolf, Stuart, University of Virginia
Plasma Science & Technology Division Chair: van de Sanden, Richard, Eindhoven University of Technology, Netherlands Co-Chair: Wolden, Colin, Colorado School of Mines Agarwal, Ankur, Applied Materials Inc. Agarwal, Sumit, Colorado School of Mines Booth, Jean-Paul, LPP-CNRS, Ecole Polytechnique, France Hamaguchi, Satoshi, Osaka University, Japan Joseph, Eric, IBM T.J. Watson Research Center Sankaran, Mohan, Case Western Reserve University Shannon, Steven, North Carolina State University Tatsumi, Tetsuya, Sony Corporation, Japan Tay, Sing-Pin, Mattson Technology Vitale, Steven, MIT Lincoln Laboratory Yeom, Geun Young, Sungkyunkwan University, Korea
Surface Science Division Chair: Millunchick, Joanna, University of Michigan Besenbacher, Flemming, Aarhus University, Denmark Fisher, Galen, University of Michigan Hines, Melissa, Cornell University Hirschmugl, Carol, Univ of Wisconsin Milwaukee Kimmel, Greg, Pacific Northwest National Laboratory Reutt-Robey, Janice, University of Maryland Utz, Arthur, Tufts University
Thin Film Division
Chair: Karabacak, Tansel, Univ of Arkansas Little Rock Co-Chair: Rieth, Loren, University of Utah Chopra, Nitin, The University of Alabama Creatore, Mariadriana, Eindhoven U of Technology, Netherlands Manufacturing Science & Technology Group Davidson, Mark, University of Florida Chair: Ku, Victor, ASM Davis, Robert, Brigham Young University Butler, Stephanie, Texas Instruments Fitz-Gerald, James, University of Virginia Diebold, Alain, College of Nanoscale Science and Eng George, Steven, University of Colorado, Boulder Liu, Brian, AIXTRON Inc. Ghosh, Avik, University of Virginia Murday, James, University of Southern California Grubbs, Robert, Sandia National Laboratories Rogers, Bridget R., Vanderbilt University Gupta, Subhadra, The University of Alabama Rowe, Jack, North Carolina State University Irving, Douglas, North Carolina State University Rubloff, Gary, University of Maryland Jur, Jesse, North Carolina State University Seebauer, Edmund, Univ of Illinois Urbana Champaign Kessels, Erwin, Eindhoven U of Technology, Netherlands Kim, Hyungjun, Yonsei University, Korea MEMS and NEMS Group Knez, Mato, Max-Planck-Inst Mikrostrukturphysik, Germany Chair: Ilic, Rob, Cornell University Lewis, Jay, RTI International Co-Chair: Metzler, Meredith, Cornell University Linford, Matthew, Brigham Young University Blain, Matthew, Sandia National Laboratories Muscat, Anthony, University of Arizona Burkett, Susan, The University of Alabama Parsons, Gregory, North Carolina State University Dhayal, Marshal, CSIR Cent for Cellular and Molecular Rack, Phillip, University of Tennessee Knoxville Biology (CCMB), India Rossnagel, Stephen, IBM T.J. Watson Research Center Ghodssi, Reza, University of Maryland, College Park Vallee, Christophe, LTM - MINATEC - CEA/LETI, France Gousev, Evgeni, Qualcomm Willey, Trevor, Lawrence Livermore National Laboratory Hiebert, Wayne, University of Alberta and National InVacuum Technology Division stitute for Nanotechnology, Canada Kotru, Sushma, The University of Alabama Chair: Stutzman, Marcy, TJ Natl Accelerator Facility Krylov, Slava, Tel Aviv University, Israel Co-Chair: Thornberg, Steve, Retired, formerly SNL Sumant, Anirudha, Argonne National Laboratory Arnold, Paul, BrooksAutomation, Granville-Phillips Products Tian, Wei-Cheng, National Taiwan University Baker, Douglas, Teledyne Hastings Zorman, Christian, Case Western Reserve University Brucker,Gerardo,BrooksAutomation,Granville-PhillipsProducts Fedchak, James, NIST Nanometer-scale Science & Tech Division Garcia, Bob, SAES Getters Hendricks, Jay, NIST Chair: Hersam, Mark, Northwestern University Li, Yulin, Cornell University Borovsky, Brian P., St. Olaf College Peacock, Neil, MKS Instruments Burnham, Nancy, Worcester Polytechnic Institute Camillone, Nicholas, Brookhaven National Laboratory Rutherford, Sherm, Duniway Stockroom Smart, Loralie, Brookhaven National Laboratory Chiang, Shirley, University of California, Davis Versluis, Richard, TNO Science and Industry, Netherlands Herman, Gregory, Oregon State University Wang, Lily, Los Alamos National Laboratory Hines, Melissa, Cornell University Wuest, Martin, INFICON Ltd, Liechtenstein Krim, Jacqueline, North Carolina State University LaBella, Vincent, University at Albany-SUNY Actinides and Rare Earths Focus Topic Schwarz, Udo, Yale University Sheehan, Paul, U.S. Naval Research Laboratory Chair: Tobin, James, Lawrence Livermore Natl Lab Wei, David, University of Florida Aydil, Eray S., University of Minnesota
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2012 PROGRAM COMMITTEE Durakiewicz, Tomasz, Los Alamos National Laboratory Gai, Zheng, Oak Ridge National Laboratory Havela, Ladislav, Charles University, Czech Republic Karabacak, Tansel, Univ of Arkansas at Little Rock Millunchik, Joanna, University of Michigan Oppeneer, Peter M., Uppsala University, Sweden Petit, Leon, Daresbury Laboratory, UK Shuh, David, Lawrence Berkeley National Laboratory
Biofilms and Biofouling: Marine Energy Focus Topic Chair: McArthur, Sally, Swinburne U of Tech, Australia Co-Chair: Hanley, Luke, Univ of Illinois at Chicago Barlow, Daniel, Naval Research Laboratory Rosenhahn, Axel, Karlsruhe Inst of Tech, Germany
Biointerphases: Bioimaging Focus Topic Co-Chair: Gamble, Lara, University of Washington Co-Chair: Grunze, Michael, U of Heidelberg, Germany Alexander, Morgan, University of Nottingham, UK Gilmore, Ian, National Physical Laboratory, UK
Electron Transport at the Nanoscale Focus Topic Chair: Li, An-Ping, Oak Ridge National Laboratory Allen, Stephanie, The University of Nottingham, UK First, Phillip, Georgia Institute of Technology Su, Chanming, Bruker Nano Wendelken, John, Oak Ridge National Laboratory
Energy Frontiers Focus Topic Co-Chair: Aydil, Eray S., University of Minnesota Co-Chair: Filler, Michael, Georgia Institute of Techn Co-Chair: McWhorter, Scott, DOE-EERE Hersam, Mark, Northwestern University Karabacak, Tansel, Univ of Arkansas at Little Rock Lewis III, John, Army Research Office Millunchik, Joanna, University of Michigan Rieth, Loren, University of Utah Smentkowski, Vincent, GE Global Research Center Tobin, James, Lawrence Livermore National Lab van de Sanden, Richard, Eindhoven U of Technology, Netherlands
Graphene and Related Materials Focus Topic Scanning Probe Microscopy Focus Topic Chair: Oleynik, Ivan, University of South Florida Batzill, Matthias, University of South Florida Chabal, Yves, University of Texas at Dallas Diebold, Alain, College of Nanoscale Science and Eng Feenstra, Randall, Carnegie Mellon University Gaskill, D. Kurt, U.S. Naval Research Laboratory Ghosh, Avik, University of Virginia Gölzhäuser, Armin, University of Bielefeld, Germany Jernigan, Glenn, Naval Research Laboratory Ohldag, Hendrik, SLAC National Accelerator Lab Schnieders, Albert, CNM Technologies GmbH Sheehan, Paul, U.S. Naval Research Laboratory Spencer, Mike, Cornell University
Helium Ion Microscopy Focus Topic Chair: Gölzhäuser, Armin, Univ of Bielefeld, Germany Smentkowski, Vincent, GE Global Research Center
In Situ Microscopy and Spectroscopy Focus Topic Chair: Artyushkova, Kateryna, Univ of New Mexico Alexander, Morgan, University of Nottingham, UK Baddorf, Arthur, Oak Ridge National Laboratory Cumings, John, University of Maryland Millunchik, Joanna, University of Michigan
Nanomanufacturing Science &Technology Focus Topic Chair: Rogers, Bridget R., Vanderbilt University Co-Chair: Madsen, Lynnette, Natl Science Foundation Gamble, Lara, University of Washington Ku, Victor, ASM Walker, Amy, University of Texas at Dallas
Oxide Heterostructure-Interface Form and Function Focus Topic Chair: Altman, Eric, Yale University Engelhard, Mark, EMSL, Environmental Molecular Sciences Laboratory Gai, Zheng, Oak Ridge National Laboratory Vallee, Christophe, LTM - MINATEC - CEA/LETI, France
Chair: Allen, Stephanie, University of Nottingham, UK Belu, Anna, Medtronic, Inc. Burnham, Nancy, Worcester Polytechnic Institute Gai, Zheng, Oak Ridge National Laboratory Li, An-Ping, Oak Ridge National Laboratory Smentkowski, Vincent, GE Global Research Center
Spectroscopic Ellipsometry Focus Topic Chair: Creatore, Mariadriana, Eindhoven University of Technology, Netherlands Alexander, Morgan, University of Nottingham, UK Hilfiker, James, J.A. Woollam Co., Inc. Millunchik, Joanna, University of Michigan Muscat, Anthony, University of Arizona Rogers, Bridget R., Vanderbilt University Smentkowski, Vincent, GE Global Research Center van de Sanden, Richard, Eindhoven University of Technology, Netherlands Wagner, Matthew, The Procter & Gamble Company Wormeester, Herbert, MESA+ Institute for Nanotechnology, U of Twente, Enschede, Netherlands
Transparent Conductors and Printable Electronics Focus Topic Chair: Porter, Lisa M., Carnegie Mellon University Aydil, Eray S., University of Minnesota Coutts, Timothy, Timothy J. Coutts Consulting, Inc. / Emeritus Fellow, NREL Durbin, Steve, University at Buffalo Haasch, Richard, U of Illinois at Urbana Champaign Herman, Gregory, Oregon State University
Tribology Focus Topic Chair: Sinnott, Susan, University of Florida Burris, David, University of Delaware Irving, Douglas, North Carolina State University Mitterer, Christian, University of Leoben, Austria Zauscher, Stefan, Duke University
Exhibitor Technology Spotlight Co-Chair: DeGennaro, J., AVS
2012 OFFICERS AND DIRECTORS PRESIDENT Alison A. Baski Virginia Commonwealth University Physics Dept. 701 W. Grace Street Richmond, VA 23284-2000 Tel: 804-828-8295 Fax: 804-828-7073 Email:
[email protected]
PRESIDENT-ELECT Susan B. Sinnott University of Florida 154 Rhines Hall Dept. of Materials Science & Eng. Gainesville, FL 32611 Tel: 352-846-3778 Fax: 804-846-3355 Email:
[email protected]
Joe Greene, Clerk University of Illinois, Urbana-Champaign
Jane P. Chang, Director University of California, Los Angeles
Lars G. Hultman, Director Linkoping University
Stephen M. Rossnagel, Treasurer IBM T.J. Watson Research Center
Steven M. George, Director University of Colorado
Gregory N. Parsons, Director North Carolina State University
Angus A. Rockett, Immediate Past-President University of Illinois
Ian Gilmore, Director National Physical Laboratory
David Surman, Director Kratos Analytical, Inc.
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GENERAL INFORMATION
Symposium Registration Procedures (See page 3 for form) We strongly encourage you to pre-register using our on-line registration program (www.avs.org), which will ensure faster confirmation. Those of you wishing to register via mail or fax may complete the form on page 3 and send it to the address listed below to be received no later than October 8, 2012: AVS c/o Experient P.O. Box 4088 Frederick, MA 21705 Fax: 301-694-5124 All pre-registered attendees will collect their badge, tickets, and other materials when they report to the AVS-59 Registration Area at the Tampa Convention Center. You will use the Pre-Registration terminals to generate your badge and collect your materials from the Print Station. All registrants must have their badge and badgeholder to gain admission to the technical sessions and exhibition.
Symposium Registration Cancellation Policy All Symposium cancellation/refund requests must be submitted by Monday, October 22, 2012 in writing to: Yvonne Towse, Registration Coordinator AVS 125 Maiden Lane, 15th Floor New York, NY 10038 Fax: 212-248-0245 Email:
[email protected]
Cancellations and refunds will be processed after the close of the show. All refunds will be issued in the form of a check and will be assessed a $25 cancellation fee
OTHER CONDITIONS You will be charged for all registrations received. •A $20 fee will be charged for all returned checks. •No Purchase Orders will be accepted. All registration fees are NON-TRANSFERABLE. •No one under the age of 12 (including infants and toddlers) will be permitted on the show floor.
Symposium Lost Badge Policy Please note that we will be imposing a $20 fee for replacement badges so please remember to bring your badge and keep it in a safe place throughout the week.
JVST Manuscript Publication Information Authors are invited to submit an article to JVST A or B on their presentation/poster topic given at the AVS International Symposium. Articles can be submitted anytime between the abstract submission deadline and the end of the year. Please indicate in the cover letter that the article is based on a talk or poster given at the AVS Symposium. Papers can be submitted to JVST A or JVST B depending on the topic. You can find easy to use templates and instructions for authors on the journal home pages http://avspublications.org/jvsta or http://avspublications. org/jvstb. Please submit your JVST A & B articles at http://jvsta.peerx-press.org or at http://jvstb.peerx-press.org for JVST A & B respectively.
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For more information, stop by the AVS Publications Booth 728 in the Exhibit Hall during the week of the Symposium or contact: Nancy Schultheis AVS Publications Office Caller Box 13994 100 Park Drive, Suite 105 Research Triangle Park, NC 27709 919-361-2787 Fax: 919-361-1378 Email:
[email protected]
AVS Membership Renewal Feature The 2013 membership renewal dues will be included within the symposium registration fees for all Full, Student, Early Career, Honorary, and Emeritus members. No further action will be required and 2013 membership will take effect on January 1, 2013. Any questions, see Angela Klink at the AVS Store (Booth 733) or via email (
[email protected])
Complimentary AVS Membership Offer If you have paid the Full, Student, or Early Career non-member registration fee, you will receive a complimentary AVS electronic membership for 2013. If you wish to receive a JVST print subscription you must pay any additional fees. For more information, stop by AVS Booth 733 in the Exhibit Hall during the week of the Symposium or contact: Angela Klink AVS 125 Maiden Lane, 15th Floor New York, NY 10038 212-248-0200 X221 Fax: 212-48-0245 Email:
[email protected]
Recording Equipment Policy The use of video recording equipment, cameras, or audio equipment at any AVS International Symposium and Exhibition, or Short Course is prohibited without prior written approval of AVS. Anyone in violation of these policies will be removed from the premises immediately. AVS reserves the right to reproduce, by any means selected, any or all of these presentations and materials.
Internet Access E-mail Pavilion–Booth 223 AVS will be sponsoring internet access in the Exhibition Hall at the Convention Center from Tuesday-Thursday. Attendees are welcome to use the computers provided in the Exhibit Hall E-mail Pavilion/ Booth 223 (generously sponsored by SPECS Surface Nano Analysis, Inc.). Attendees can also log in directly using their own laptops at various wireless spots marked throughout the Exhibit Hall. The Tampa Marriott Waterside Hotel & Marina (AVS headquarters hotel) offers complimentary wireless in the lobby and public areas.
Securing Visas International Attendees: Due to increasing delays in securing visas to the U.S. it is strongly encouraged that prospective international attendees begin this process as early as possible to ensure approval. Please refer to the following website for additional information and assistance: http://www.national-academies.org/visas You may also contact Yvonne Towse (
[email protected]) for additional assistance.
Additional Notes • AVS will be providing PCs in all session rooms in addition to switchboxes which should allow for a quick and easy transition between presentations. All authors are encouraged to visit the Presenters Preview Room 1 to test the equipment prior to their presentation. • AVS will not publish an Abstract Book All abstracts, as well as a personal scheduler, have been available on our website since early July. Computer terminals with a program link will be available on the second level of the Convention Center should you need to reference any abstracts during the week.
Exciting 2012 Events
AVS Raffle Zone Booth 733
Welcome Mixer for Attendees & Exhibitors
Be sure to enter your raffle tickets to participate in the daily raffles being held Tuesday–Thursday in the Exhibit Hall Raffle Zone Booth 733! Thanks to our generous sponsors we have some really exciting prizes this year.
Will take place on Monday from 5:30 p.m.–7:30 p.m. on the Riverwalk of the Tampa Convention Center. The Mixer is a casual gathering where attendees and exhibitors can enjoy some refreshments and spend time together prior to the opening of the Exhibit Hall.
AVS Membership Booth and Store Booth 733 Browse through AVS Educational materials (books, training DVDs and monographs); trinkets, souvenirs and logo items. Learn about the advantages and benefits of AVS membership and find out how to get more involved in AVS events and activities in Booth 733 in the Exhibit Hall.
AVS Career Center Booth 733 Looking for a position or seeking qualified candidates for a job opening? If so, please register at the AVS Career Center located in the Exhibit Hall in Booth 733.
AVS Publications Booth 728 Come meet with the AVS journal editors, find out how to submit a manuscript and learn about exciting developments in all AVS journals.
Art Zone Booth 222 See the entries in the 2012 art and pumpkin contests and vote for your favorites. Winners will take home cash prizes! Generously sponsored by Kurt J. Lesker. To enter the contest, stop by the Staff Office (Room 3) for further information.
Exhibit Hall Refreshment Breaks Visit the Exhibit Hall during the morning and afternoon technical session breaks. There will always be something special being offered in the Hall.
Complimentary Lunches in the Exhibit Hall Attendees who pay for a full week registration (Full, Student, Early Career, and Exhibitors) will receive two free lunch vouchers redeem-able on Tuesday and Wednesday for lunch concessions located in the Exhibit Hall. Stop by the Exhibit Hall between 12:00– 2:00 p.m. to grab a bite to eat and network with exhibitors and fellow colleagues. Come to the Exhibit Finale on Thursday for free lunch for all (no tickets required).
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Ask The Experts Booth 528 The AVS Vacuum Technology Division and Duniway Stockroom, SAES Getters and Brooks Automation are sponsoring an Ask The Experts (ATE) booth which will offer a special open forum to discuss and help solve vacuum related issues. Are you experiencing: Puttering Pumps? Garbled Gauges? Spurious Species? Come and Ask the Experts!
Students and Early Career Members • On Sunday evening there will be a free workshop on Skills for a Successful Industrial Career. Come and learn what is important to industry today. • On Monday afternoon there will be a JVST Writer’s Workshop held during the last half of the lunch break to provide guidance and insight on the publishing process for AVS Student and Early Career Members. • On Monday evening there will be a special Professional Development session entitled “Town Hall Meeting: Federal Funding & Research Opportunities”, featuring program managers from several U.S. government agencies. • The Job Information Forum, which provides an opportunity to learn from the career experiences of young industrial, academic and national lab professionals, will again be held on Tuesday during lunch.
AVS Companion Tours AVS offers tours of Tampa and the surrounding area for your enjoyment. For additional information, contact Marilyn Ruzic, Tour Coordinator, companiontours @avs.org or visit www.avs.org.
Free Caricature Visit Booth 301 (Kratos Analytical) to get your ticket validated for a free caricature in the special event booth.
Free Massage Visit Booth 300 (Vacuum Research Corp.) in the Exhibit Hall to get your ticket validated for a free massage!
GENERAL INFORMATION Hotel Reservations
Rates, Parking and Directions
2013 Symposium Suggestions
AVS is pleased to offer special rates at two Nashville hotels—Tampa Marriot Waterside Hotel & Marina (Headquarters) and the Embassy Suites Tampa Downtown. Keep in mind that reserving a room in this convention block helps AVS meet its financial commitments to the host city and retain lower registration fees as well as a high quality conference with the features and services you are accustomed too. To make these properties more attractive, AVS will be offering several incentives for you to book your stay—watch for these specials from July–September.
Tampa Marriott Waterside Hotel and Marina Hotel (Headquarters) 700 South Florida Ave Tampa, FL 33602 Single/Double: $187* Parking: $20 overnight valet $13; $13 daily valet
We hope that you will be satisfied and well-served by the content and activities of the 59th International Symposium of AVS whether your main interests lie in the technical sessions, short courses, equipment exhibition, or special events and functions which are scheduled throughout the week. The AVS Program Committee strives to ensure that the International Symposium meets the needs of its membership and the larger community which utilizes all aspects of vacuum science and technology. To assist the Committee in meeting this objective for next year’s symposium, suggestions for improvement in any aspect should be directed to the Program Committee Chair: James Fitz-Gerald, University of Virginia, Wilsdorf Hall, #226, 395 McCormick Road, Charlottesville, VA 22904-474,
[email protected]
Reservations Opens: July 9, 2012 Closes: October 5, 2012 By Web http://registration3.experientinc.com/ showAVS121/ By email experient-inc.com By phone 847-282-2529 Cancellation Policy Cancellation Policy: All reservation cancellations must be received by the AVS Housing Bureau by October 5, 2012. If you need to cancel after October 5, 2012, you must do so directly with the hotel and provide a 72 hour notice to avoid being charged one night's room and tax.
Climate Tampa’s weather is a combination of bright sunny days tempered by gentle bay breezes. In the fall, the days are pleasantly warm, while the evenings can be a bit cooler. The average annual temperature in Tampa is a comfortable 73 degrees. Loose, lightly colored clothing is recommended for daytime activities; a lightweight jacket or sweater is a good choice for the evening, especially for activities on or near the water. Sunscreen rated SPF 15 or higher is also a must for visitors of all ages.
*Government Rates Available
From Tampa International Airport (TPA) to Marriott (8 Miles): • Exit Tampa International Airport • Merge onto I-275 North (towards Tampa) • Exit onto North Ashley Drive • Turn left onto E. Whiting Street • Turn right onto S. Franklin Street • Turn left on Old Water St. Hotel is on the right Embassy Suites Tampa Downtown Hotel 513 South Florida Ave Tampa, FL 33602 Single/Double: $187 Parking: $20 overnight valet parking From Tampa International Airport (TPA) to Embassy Suites (7 Miles): • Exit Tampa International Airport • Merge onto I-275 North (towards Tampa) • Exit onto North Ashley Drive • Turn left onto E. Whiting Street • Turn right onto S. Franklin Street • Turn left onto Channelside Drive • Turn right onto S. Florida
Airport Tampa International Airport (TPA) Centrally located, Tampa International Airport is just seven miles west of downtown Tampa. On an average day, the airport is home to more than 100,000 visitors. Tampa International Airport offers 273 daily nonstop scheduled departures to 68 domestic destinations and 42 weekly nonstop scheduled departures to five international markets. The efficient layout of the airport eliminates hassles and delays, ensuring swift and comfortable movement for passengers. Ground Transportation from the airport Taxi Ride: $25 each direction. Shuttle Ride: $12-$15 each directions.
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Help us to serve you better! AVS 60th International Symposium LONG BEACH CONVENTION CENTER LONG BEACH, CALIFORNIA OCTOBER 27–NOVEMBER 1, 2013
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TAMPA CONVENTION CENTER UPPER LEVEL
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SPECIAL SESSIONS/WORKSHOPS Nanomanufacturing: Current Status and Future Prospects Sunday, October 28, 2012, 1:00–5:00 p.m., Room 16, Tampa Convention Center Alexander Liddle, Nanofabrication and Nanomanufacturing Group, Center for Nanoscale Science and Technology, NIST This tutorial will provide an introduction to nanomanufacturing. The tutorial begins by drawing the distinction between nanofabrication—the technology for making small things—and nanomanufacturing—the application of nanofabrication technologies to making money. This is followed by a discussion of the characteristics required of a nanomanufacturing process in terms of throughput, precision and defectivity, as it relates to the type and functionality of nanostructures being made. Next, specific examples are considered, with a detailed examination of the integrated circuit fabrication process and those factors that have led to it becoming the most successful current nanomanufacturing industry. This will serve as a baseline against which to compare and contrast new and emerging nanomanufacturing processes and applications ranging from nanocomposites to DNA self-assembly to tip-based, single-atom manipulation to nanoparticle drug delivery systems to optical metamaterials. Finally, nanomanufacturing complexity is considered in terms of product functionality and cost. The cost for attending this tutorial is $100 or $75 (students/early career).
14th Topical Conference on Quantitative Surface Analysis (QSA 14) Sunday, October 28, 2012, 7:30 a.m.-4:00 p.m., Room 20, Tampa Convention Center Theme: 2D and 3D Nanomaterials Analysis This Topical Conference will provide a forum for discussion on the quantitative aspects of surface analysis and on surface, interface and thin-film characterization, including high spatial resolution. The program will consist of invited presentations. Each invited paper will be followed by an extended discussion period. QSA 14 will be a one day conference and the cost for full attendees is $115 and the cost for students is $70 (includes breakfast, lunch, two breaks, and lively discussions). This small topical meeting has proven to be useful to students and others new to quantitative surface analysis and for more experienced researchers to see the current state of the art in a variety of methods.
Biomaterial Interfaces Division Plenary Session Sunday, October 28, 2012, 4:00–6:00 p.m., Room 23, Tampa Convention Center, followed by a reception The Biomaterial Interfaces and Applied Surface Science Divisions come together for the traditional Biomaterials Plenary (BP), which this year is themed Bioimaging: in vacuo, in vitro, in vivo. In this Plenary Session we will explore the challenges involved with imaging of cells, tissues and the biochemical processes contained within. We bring together international leaders in their areas to present the latest advances and discuss future opportunities, including Stefan Hell “Nanoscopy with focused light”, Gerd Schneider “3-D view into cells by X-ray nano-tomography” and DaeWon Moon “NanoBio Imaging for New Biomedical Applications”.
Surface Science Morton M. Traum Presentation Thursday, November 1, 2012, 12:00 Noon, Room 22, Tampa Convention Center The Tuesday Evening Poster Session features presentations by the five Mort Traum Student Award Finalists. The Morton M. Traum Surface Science Student Award will be presented for the best student poster presented in the poster session sponsored by the Surface Science (SS) Division at the AVS International Symposia. The 2012 Winner wil be announced in the Traum Student Award Ceremony, to be held Thursday at noon immediately following SS-ThM in Room 22.
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SPECIAL SESSIONS/WORKSHOPS Electronic Materials and Processing Division Industrial Forums The Electronic Materials and Processing Division (EMPD) will host two industrial forums for those interested in learning about career opportunities in the semiconductor industry. These talks are aimed at introducing graduate students and postdoctoral researchers to some of the technical hurdles that the industry faces. Following the talks, there will be a question and answer period as well as informal discussions with the presenters. Dr. Gary McGuire will moderate both forums.
Careers at Lam Research Monday, October 29, 2012, 5:30 p.m., Room 9, Tampa Convention Center Sponsored by Lam Research Corporation. Following a session on high-k dielectrics for MOSFETs, this forum will provide an open dialogue between an industrial liaison and young scientists and engineers. Dr. Joydeep Guha will describe Lam Research Corporation, its technical thrusts as well as challenges, its products, future direction, and career opportunities.
Moore’s Law and Careers at Intel Tuesday, October 30, 2012, 6:20 p.m., immediately following the EMPD Business Meeting, Room 9, Tampa Convention Center Sponsored by Intel Corporation. In 1965, Intel co-founder Gordon Moore declared that the number of transistors on a chip would double roughly every two years. Four decades later, the silicon microelectronics industry has turned this prediction into a maxim that has helped bring the world products that have changed the way we live, work and play. However, many have questioned whether the aggressive trend dictated by “Moore’s Law” can continue to be sustained. Dr. Sean King joined Intel in 1997 and is currently a Senior Technical Contributor and Process Development Engineer in Intel’s Portland Technology Development (PTD) Division. Dr. King’s talk will illustrate that while the future is not crystal clear, numerous paths exist to extend Moore’s Law for several more decades. Dr. King will further highlight Intel’s silicon technology leadership and career opportunities at the world’s largest semiconductor manufacturer.
ASTM-E42/ASSD Workshop: “XPS and Beyond: ISS, UPS, HIM, APT and other TLAs (Three Letter Acronyms)” Tuesday, October 30, 2012, 7:30 p.m., Florida Ballroom V, Tampa Marriott Waterside Hotel The ASSD business meeting will be followed by capsule presentations by the ASSD’s two Student Award candidates: William Roach from The College of William and Mary and Tyler Kent from the University of California, San Diego. We will end the night with the annual workshop which is hosted by the ASTM E42 Committee on Surface Analysis and the ASSD. The annual workshop focuses on a timely topic of interest to the surface analysis community. The Workshop is intended to improve the quality of utilization of surface analysis tools, in an engaging and informal atmosphere. The discussion is generally quite lively and much useful information generally shared. Snacks and drinks are provided at no cost.
Speakers: Chuck Bryson: “An Exercise in Optimizing an XPS System for Applications that has Lead to a Very Small Instrument that can be Extended to High-Pressure Applications” David Joy: “HIM - Microscopy Done Right” Emmanuelle Marquis: “All You Wanted to Know about APT” The night will end with an open discussion on standards needs in less utilized and emerging analytical techniques.
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PROFESSIONAL LEADERSHIP Free Workshop: Skills for a Successful Industrial Career Sponsored By: AVS Professional Leadership Committee, Nanomanufacturing Focus Topic, & MSTG
Sunday, October 28, 2012, 6:00-8:00 PM Room 16, Tampa Convention Center • Is my academic program properly preparing me for a successful industrial career? • What skills should I be attaining and honing to progress in an industrial career? • What do industry employers look for in a new employee? • Is publishing a few papers and completing my degree enough to get the job I want? These and many other topics will be discussed during this two-hour workshop led by Dr. Stephanie Watts Butler and Dr. Erik Svedberg. Stephanie Watts Butler, Innovation Manager, Power Supply Solutions Business Unit, Texas Instruments Dr. Butler is a recognized expert on managing the development of highly technical and complicated innovation. Throughout her 29-year career in the semiconductor industry, Dr. Butler has worked in silicon wafer manufacturing, silicon technology development, packaging development, control system development, sensor development, magnetic tape head processing, R&D Management, and Integrated Circuit new product development. She has served as a Strategic Program Manager appointed by the CTO and VPs to lead major across-organizational initiatives. Erik Svedberg, Senior Program Director, National Materials and Manufacturing Board, National Academies Dr. Svedberg has a decade of industry experience with both small and large companies (10 and 50,000 employees) in the materials science area and has also been a guest researcher at NIST for several years. Dr. Svedberg currently works with experts from across the nation to develop, negotiate, and oversee scientific and technical advisory studies that investigate issues of materials science, manufacturing and engineering design. He has been awarded and overseen several research grants and has published over 80 scientific articles which have been cited over 500 times, holds two patents, and has started his own company.
Everyone is welcome to join the discussion! Come share your questions, add your insight, learn what is important to industry today, and network with industry-minded colleagues.
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PROFESSIONAL LEADERSHIP TOWNHALL MEETING: Federal Funding & Research Opportunities 7:00 p.m.–8:45 p.m., Florida Ballroom V, Tampa Marriott Waterside Hotel & Marina Monday, October 29, 2012 Open to ALL Symposium Attendees
Refreshments Provided
Welcome: Dr. Lynnette D. Madsen, National Science Foundation (NSF) Briefings from Agencies (25 minutes each) with Q&A after each presentation
Materials Research Trends and Opportunities in the USA and Abroad: A National Science Foundation Perspective Speaker: Dr. Lynnette D. Madsen,
[email protected], (703) 292-4936 Agency Responsibilities: She has served as the Program Director for Ceramics at the NSF within the Division of Materials Research since 2000. In addition to recommending the distribution of the Ceramics Program budget (now ~$11M), Dr. Madsen has additional responsibilities in materials research, nanomanufacturing, cultural heritage science (CHS), cooperation with the National Institute of Standards and Technology (NIST), international activities (Materials World Network (MWN)), and broadening participation. AVS Involvement: She attended her 1st AVS short course in 1986 and ran her 1st AVS 5k race in 1988. Now, she regularly attends the annual meeting. She co-chairs the Nanomanufacturing Focus Topic and serves on the Professional Leadership, Membership, and Governance Committees.
National Institutes of Health (NIH)& the Role of Physical Sciences in Cancer Research Speaker: Dr.Larry A. Nagahara,
[email protected], (301) 451-3388 Agency Responsibilities: Dr. Nagahara is Acting Director of the Office of Physical Sciences-Oncology in the Center for Strategic Scientific Initiatives (CSSI), National Cancer Institute (NCI), where he coordinates and directs program and research activities related to expanding the role of the physical sciences in cancer research, including the Physical Sciences-Oncology Centers (PS-OC) Program. Dr. Nagahara also currently represents NCI on the Trans-NIH Nano Task Force, which is tasked to develop NIH-wide scientific and policy vision for nanotechnology was an NCI’s Project Scientist for the NIH’s Nanomedicine Development Centers and NIH’s Genes and Environment Initiative (GEI), Exposure Biology Program. AVS Involvement: His ties to the AVS are from a while ago. During the late 80’s and early 90’s, he went to many AVS sponsored events, including a local chapter in AZ. Most of these were the annual AVS Meeting and the scanning probe meetings/ nanoscience meetings.
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STUDENT/EARLY CAREER FUNCTIONS JVST Writer’s Workshop Monday, October 28, 2012, 1:15 pm Florida Ballroom V, Tampa Marriott Waterside Hotel & Marina • Wonder how the technical publication process works? • Want to know what editors look for in a quality submission? • Want an edge in getting published? If you answered yes to any of these questions, then you should make time to attend the JVST Writer’s Workshop being held at this week’s AVS Symposium. Editors from major scientific publications will be on hand to offer insights into the process of technical publications and suggestions on how to get your work published. Editors participating in this JVST Writer’s Workshop include: • Dr. Eray Aydil, Editor-in-Chief of JVST • Dr. Mark Lavine, Senior Editor of Science The Workshop is open to all Symposium student and early-career attendees (no advanced registration is required); invitations will be distributed to all Symposium registrants when they collect their materials at Conference Registration. A COMPLIMENTARY LUNCH WILL BE PROVIDED TO ALL ATTENDEES.
Job Information Forum Tuesday, October 30, 2012, 12:00 Noon Salon E, Tampa Marriott Waterside Hotel & Marina • Want to know more about starting a successful career? • Not sure whether industry, academia, or government should be the next step? Speakers from industry, academia, and government will provide an overview of their career pathways, what they look for when evaluating job applicants, how they made their career choices, and what it takes to succeed. Speakers at this year’s Job Information Forum include: • Assistant Professor Liney Arnadottir (Oregon State University) • Surface Scientist Lance Lohstreter (Medtronic) • Research Scientist Michael Brumbach (Sandia National Laboratory) • Postdoctoral Research Fellow Dev Mukherjee (University of South Florida) The Forum is open to all Symposium student and early-career attendees (no advanced registration is required); invitations will be distributed to all Symposium registrants when they collect their materials at Conference Registration. A COMPLIMENTARY LUNCH WILL BE PROVIDED TO ALL ATTENDEES.
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STUDENT CHAPTERS Student Chapter Information AVS Student Chapters were established in 2003 to provide students tailored opportunities for career and professional development within the AVS the materials, processing, and interfaces communities. If there is a Chapter at your college or university, we urge you to join. If there isn’t a Chapter at your location, then maybe you’re the person to get one started. Please visit the AVS Student Chapter Displays located in the Tampa Convention Center during the Symposium to find out how to form a student chapter or to network with current students and compare notes on recent activities and issues of common concern. AVS will be happy to assist your university in establishing a chapter. Please visit www.avs.org or contact Angela Klink (
[email protected]) for more information.
AVS Student Chapters: Northwestern University UCLA University of Alabama at Tuscaloosa University of Central Florida University of Florida University of Illinois at Urbana-Champaign University of Washington
Get Involved in AVS If you want to join an existing Student Chapter or start a Student Chapter at your university, please contact AVS directly (
[email protected]).
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CAREER CENTER AV S . . .
The AVS Professional Leadership Committee will be hosting the AVS Career Center, open to all attendees, at the International Symposium for the purpose of connecting job seekers with potential employers. In addition, in an attempt to create more opportunities for employers to find qualified applicants for job openings and for qualified applicants to have more opportunities to learn about potential employers there will be a Job Fair during the AVS 59th International Symposium and Exhibition, October 28–November 2, 2012 in Tampa, FL.
Creating the opportunity for making the right connections •Networking •Career Services •Job Fair •Interview Skills
The Job Fair continues to grow each year. As a participating company you can post your job(s) on the bulletin board, display any pertinent company information, interact throughout the day with individuals interested in your company and still host interviews in a semi-private interview room. Greater exposure is guaranteed!
New this year at the AVS Career Center - Résumés will be available electronically for employers to review and interview appointments will be scheduled via email messaging. Regular services provided will include collecting job postings/résumés, complete timecards, schedule/coordinating interviews, and providing a message board. Interviews may be scheduled Tuesday through Friday (Friday interviews will be at a location TBD between Employer and Applicant as necessary).
EMPLOYERS: Job Fair Registration: Includes 1 skirted table (6’ x 2’) with 2 chairs, 1 or more job postings on the Career Center bulletin board, and one electronic copy of the résumés on file; ability to review résumés electronically and host interviews in a semi-private room during the job fair. The Career Center will be a carpeted area within the exhibit hall. Must register by September 28, 2012 ($500). Career Center Registration: Includes 1 or more job postings on the Career Center bulletin board and ability to review résumés electronically and host interviews in a semi-private room during the job fair.. (FREE prior to 10/19; $50 After 10/19). Résumé Files only: After the symposium you will receive an electronic copy of all job seeker résumés/CVs. ($150) Job Posting(s) only: Includes 1 or more job postings on the Career Center bulletin board. (FREE)
Potential Employers: • Submit registration form by Septemer 28, 2012 - registration form is available online • Email job postings by October 19, or bring 2 copies of each job posting onsite • Complete a time card at beginning of the week at the Career Center Registration area • Check for messages from interested applicants (regularly each day) • NEW!! Review Résumés ELECTRONICALLY • Reply to messages (i.e. interview, regrets, etc.) • Schedule/conduct interviews (onsite and informal)
Advance Submission Deadlines: Job Fair Table: Job Postings: Résumés/CVs:
Sepember 28, 2012 October 19, 2012 October 12, 2012
Job Seekers: • Email your résumé by October 12 (OR bring copy on a flash drive) • Complete a time card at beginning of the week at the Career Center Registration area • Review job boards daily • Leave messages for employers/check email for interivew appointments (frequently each day) • Be available for onsite/informal interviews • Bring EXTRA, clean copies of your résumé to hand out as needed Your résumé will be included in an electronic file available for review by potential employers. When you leave a message slip of interest for an employer, you will receive an email message if they wish to schedule an interview. It is important to check your email often each day so you do not miss any interview opportunities.
AVS Career Center Online Registration and Information: http://www2.avs.org/symposium/AVS59/pages/career_center.html, click on Meetings/Events/Services and then Career Center (there is a section for Employers and Job Seekers in addition to the Employer registration form)
Hours/Location October 28-November 1, 2012 Sunday 2:00 pm - 6:00 pm Monday 7:30 am - 5:00 pm Tuesday 10:00 am - 5:30 pm Wednesday 10:00 am - 4:30 pm Thursday 10:00 am - 2:00 pm Thursday 2:00 pm - 5:00 pm
Career Center Registration Area Career Center Registration Area Exhibit Hall Booth 733 Exhibit Hall Booth 733 Exhibit Hall Booth 733 Career Center Registration Area
Advance résumés may be emailed to: Heather Korff,
[email protected]
For additional career resources, please visit the AVS Online Career Center at: http://careers.avs.org Questions: 301-209-3189;
[email protected]
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Vi s i tt heAVSSt or eatBoot h733: T ues day : 1 0: 00a. m.-5: 30p. m. Wednes day : 1 0: 00a. m.-4: 30p. m. Thur s day : 1 0: 00a. m.-2: 00p. m.
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AVS-59 SPONSORS AVS would like to acknowledge the following companies who have generously provided support for AVS-59 events.
A DIVISION OF ULVAC-PHI
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AVS CORPORATE MEMBERS AVS wishes to thank the following Corporate Members for their support. For information on benefits or to become a corporate member please contact Angela Klink;
[email protected] or refer to the AVS website: www.avs.org • Advanced Energy Industries Inc. • Agilent Technologies • AJA International, Inc. • Alicat Scientific, Inc. • Altair Technologies, Inc. • Asylum Research • BellowsTech, LLC • Bruker Nano Surfaces • Cambridge NanoTech • Capitol Vacuum Parts • CeramTec North America • Chuanbei Vacuum Technology (Beijing) Co., Ltd. • Denton Vacuum LLC • Duniway Stockroom Corp. • Edwards Vacuum, Inc. • Evans Analytical Group • FMG Enterprises, Inc. • Gamma Vacuum • GNB Corporation • Helium Leak Testing, Inc. • Hiden Analytical, Inc. • Hine Automation • HUETTINGER Electronic, Inc. • HVS Leak Detection • Innovative Vacuum Solutions, Inc. • Intellivation, LLC • ION-TOF USA Inc. • Kratos Analytical • Kurt J. Lesker Company • Lam Research Corporation • M&I Materials Ltd (Apiezon) • MeiVac, Inc. • MEWASA North America, Inc.
• MKS Instruments Inc. • Nor-Cal Products • Nordiko Technical Services Limited • Omicron Nanotechnology USA, LLC • Oxford Instruments - Austin Scientific • Pfeiffer Vacuum Technology • Physical Electronics • Plasmaterials Inc. • Plasma-Therm • PREVAC sp. z o.o. • Process Materials Inc. • R.D. Mathis Company • RBD Instruments, Inc. • RF VII Inc. • RHK Technology Inc. • SAES Getters USA, Inc. • Scientific Instruments, Inc. • Semicore Equipment • Sequoia Brass and Copper • SPECS Surface Nano Analysis GmbH • Staib Instruments, Inc. • Sumitomo (SHI) Cryogenics of America, Inc. • Super Conductor Materials Inc. • Ted Pella, Inc. • Thermionics Laboratories, Inc. • Thermo Fisher Scientific • Transfer Engineering and Manufacturing Inc • Trillium US • U-C Components Inc. • Vacuum Engineering & Materials Co., Inc. • Vacuum Research Corp. • VAT Inc. • VG Scienta, Inc.
Media Sponsors
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AVS AWARD WINNERS MEDARD W. WELCH AWARDEES 1970 1971 1972 1973 1974 1975 1976 1977 1978 1979 1981 1983 1984 1985
Erwin W. Mueller Gottfried K. Wehner Kenneth C.D. Hickman Lawrence A. Harris Homer D. Hagstrum Paul A. Redhead Leslie Holland Charles B. Duke Georg H. Hass Gert Ehrlich Harrison E. Farnsworth H.H. Wieder William S. Spicer Theodore E. Madey
1978 1980 1982 1984 1986 1986 1988
Pierre V. Auger Daniel Alpert Alfred H. Sommer Alfred Benninghoven Rointan F. Bunshah Alfred Y. Cho John R. Arthur, Jr.
1986 1987 1988 1989 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999
Harald Ibach Mark J. Cardillo Peter Sigmund Robert Gomer Jerry M. Woodall Max Lagally Ernst Bauer George Comsa John Yates, Jr. Gerhard Ertl Peter J. Feibelman Phaedon Avouris David E. Aspnes John H. Weaver
2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
D. Phillip Woodruff E. Ward Plummer Buddy Ratner Matthias Scheffler Rudolf M. Tromp Charles S. Fadley John C. Hemminger Jerry Tersoff Miquel Salmeron Robert J. Hamers Mark J. Kushner Wilson Ho Yves Chabal
2002 2004 2006 2008 2010 2012
Cristoforo Benvenuti Kunio Takayanagi Leonard J. Brillson Daniel Auerbach Gerald Lucovsky Dietrich Menzel
2004 2005 2006 2007 2008 2009 2010 2011 2012
Johan K. Fremerey Christopher R. Brundle Siegfried Hofmann Richard J. Colton Seizo Morita Donald R. Baer Fan Ren John E. Rowe Sven Tougaard
GAEDE-LANGMUIR AWARDEES 1990 1992 1994 1994 1996 1998 2000
Francois M. d’Heurle Russell D. Young Robert J. Celotta Daniel T. Pierce Gerald J. Lapeyre Paul D. Palmberg Gary W. Rubloff
ALBERT NERKEN AWARDEES 1994 1995 1996 1997 1998 1999 2000 2001 2002 2003
1985 John L. Vossen 1986 Donald J. Santeler 1987 Marsbed Hablanian 1988 Stanley L. Milora 1989 Charles D. Wagner 1989 Martin P. Seah 1990 J. Peter Hobson 1991 Harold R. Kaufman 1992 Paolo della Porta 1993 John O’Hanlon
Hajime Ishimaru Donald Mattox William R. Wheeler John C. Helmer Peter J. Clarke Paul Holloway John T. Grant Cedric Powell David J. Harra Peter B. Barna
JOHN A. THORNTON MEMORIAL AWARDEES AND LECTURES 1989 1990 1991 1992 1993 1993
Eric Kay Maurice Francombe Joseph E. Greene Thomas R. Anthony John W. Coburn Harold F. Winters
1994 1995 1997 1999 2001 2003
1980 1981 1982 1983 1984 1985 1986 1987 1988 1989 1990
Christopher R. Brundle Lawrence L. Kazmerski Charles M. Magee D. James Chadi Barbara J. Garrison Franz J. Himpsel Richard A. Gottscho Raymond T. Tung Jerry D. Tersoff Randall M. Feenstra Stephen M. Rossnagel
1991 1993 1994 1995 1996 1997 1998 1999 2000 2001 2002
1959 1963 1967 1968 1981 1981 1982 1984 1985 1986 1988
Rudy A. Koehler Benjamin B. Dayton Daniel Alpert Luther E. Preuss Leonard C. Beavis N. Rey Whetten Charles B. Duke J. Roger Young Kai Siegbahn Manfred S. Kaminsky Jack H. Singleton
1991 1991 1992 1996 1997 1997 1998 1999 1999 2000 2001
David Hoffman Jan-Eric Sundgren James M.E. Harper Timothy Coutts Samuel D. Bader William D. Sproul
2005 2007 2009 2011
Stan Veprek Stephen J. Pearton Frances A. Houle Vincent M. Donnelly
2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Charles H. Ahn Kathryn W. Guarini Jane P. Chang Mark C. Hersam W.M.M. Kessels Sergei Kalinin Beatriz Roldan Cuenya Arutiun Ehiasarian Mohan Sankaran E. Charles H. Sykes
2003 2003 2004 2004 2005 2006 2007 2008 2009 2009 2011
H. Frederick Dylla Gary E. McGuire Arthur O. Fuente, Jr. J.W. Rogers, Jr. Gerald Lucovsky Alvin Czanderna Paula J. Grunthaner Eric Kay Rudolf Ludeke William D. Sproul Robert A. Childs
PETER MARK AWARDEES William J. Kaiser Robert Hamers Marjorie Olmstead Emily Carter Brian E. Bent Brian Swartzentruber David G. Cahill Eray S. Aydil Stacey F. Bent Eli Rotenberg Rachel S. Goldman
HONORARY MEMBERSHIP John W. Coburn J. Lyn Provo Marsbed Hablanian Howard Patton Paul Holloway William D. Westwood Collin Alexander Donna Bakale Sherwin James S. Murday Lawrence L. Kazmerski Robert Willis
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AVS AWARD WINNERS GEORGE T. HANYO AWARDEES
JOHN L. VOSSEN MEMORIAL AWARDEES 1997 1998 1999 2000
Robert Shaner Hasan Fakhruddin Chris Ann Slye Charles J. Miltenberger
2001 Paul Lulai 2002 Toni L. Evans 2004 Jacqueline G. Kane
2003 2004 2005 2006 2007
Kenneth Bratland (Univ. of Illinois at Urbana-Champaign) Michael Filler (Stanford University) Michael Zellner (University of Delaware) Xingyi Deng (Harvard University) Thomas Mullen (Pennsylvania State University)
1997 1998 1999 2001 2003
Mark Engelhard David A. Lubelski Robert A. Childs John E. Bultman Ernest A. Sammann
2004 2006 2010 2011 2012
Richard E. Muller Jeffrey D. Kelley Arthur W. Ellis Jonathan Koch Percy Zahl
DOROTHY M. AND EARL S. HOFFMAN AWARDEES 2008 2009 2010 2011
Gregory Rutter (Georgia Institute of Technology) Juan Carlos Rodriguez-Reyes (University of Delaware) Esther Amstad (ETH Zurich, Switzerland) Kangkang Wang(Ohio University)
NELLIE YEOH WHETTEN AWARDEES 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000
Jani C. Ingram (University of Arizona) Lucia Markert (University of Illinois) Hope Michelson (IBM Almaden Research Center) Laura Tedder (University of California, San Diego) Monica Katiyar (University of Illinois) Cynthia Kelchner (Iowa State University) Tracey E. Caldwell (University of California, Davis) Catherine Labelle (Massachusetts Institute of Technology) Jennifer S. Hovis (University of Wisconsin) Nerissa Taylor (University of Illinois) Jennifer E. Gerbi (University of Illinois)
1983 1984 1985 1986 1987 1988 1989 1990 1991 1992 1993 1994 1995 1996 1997
J.S. Villarubia (Cornell University) Kenneth T.Y. Kung (MIT) Anne L. Testoni (Northwestern University) Jingguang G. Chen (University of Pittsburgh) Joanne R. Levine (Northwestern University) Christopher E. Aumann (University of Wisconsin) Brian S. Swartzentruber (University of Wisconsin) Guangquan Lu (University of California, San Diego) Michael Flatte (University of California, Santa Barbara) Rex Ramsier (University of Pittsburgh) Daniel Kelly (University of California, Santa Barbara) Britt Turkot (University of Illinois) Robert Carpick (University of California, Berkeley) Kevin Robbie (University of Alberta) Kimberly S. Turner (Cornell University)
2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011
Tanhong Cai (Iowa State University) Lyudmila Goncharova (Rutgers University) Meredith L. Anderson (Carnegie Mellon University) Wensha Yang (University of Wisconsin, Madison) Natalia Farkas (University of Akron) Jessica Hilton (University of Minnesota) Andrea Munro (University of Washington) Brittany Nelson-Cheeseman (University of California, Berkeley) Sarah Bishop (University of California, San Diego) Xiaoyu Wang (University of Wisconsin, Madison) Sondra Hellstrom (Stanford University)
AVS RUSSELL AND SIGURD VARIAN AWARDEES 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011
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John S. Lewis, III (University of Florida) Sanjit Singh Dang (University of Illinois, Chicago) Michelle L. Steen (Colorado State University) Jianwei Dong (University of Minnesota) Wei Tan (University of Illinois) John R. Kitchin (University of Delaware) Vassil Antonov (Univ. of Illinois at Urbana-Champaign) Liam Pingree (Northwestern University) Gregory Ten Eyck (Rensselaer Polytechnic Institute) H. Lee Mosbacker (Ohio State University) Erik Wallen (Linkoping University) Sudhakar Shet (New Jersey Institute of Technology/NREL) Christine Tan (Cornell University) David A. Siegel (University of California, Berkeley)
A V S 5 9 t h A n n u a l
Aw a r d s r e mo n y & Ce c e p t i o n Re C e l e b r a t e w i t h A V S a w a r d e e s a t t h e
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a t 6 : 1 5 p . m . F o l l o w e d b y t h e
5 9 t h A w a r d s R e c e p t i o n
i n t h e T a m p a M a r r i o t W a t e r s i d e H o t e l &M a r i n a F l o r i d a B a l l r o o m C o mp l e t ed e t a i l s a v a i l a b l eo n l i n ea t www. a v s . o r g
AVS AWARDS AWARDS CEREMONY & RECEPTION The AVS Awards Ceremony will be held on Wednesday, October 31, 2012 at 6:15 p.m. in Ballroom B of the Tampa Convention Center to be followed immediately by an Awards Reception in the Florida Ballroom of the Tampa Marriott Waterside Hotel and Marina. This year, AVS honors the following awardees: Yves Chabal, Medard W. Welch Award Sven Tougaard, Albert Nerken Award Dietrich Menzel, Gaede-Langmuir Award E. Charles H. Sykes, Peter Mark Award Percy Zahl, George T. Hanyo Award The newly elected AVS Fellows The 2012 AVS National Student Award Finalists
MEDARD W. WELCH AWARD The Medard W. Welch Award was established in 1969 to commemorate the pioneering efforts of M.W. Welch in founding and supporting AVS. It is presented to recognize and encourage outstanding research in the fields of interest to AVS. The award consists of a cash award, a struck gold medal, a certificate, and an honorary lectureship at a regular session of the International Symposium.
YVES CHABAL Dr. Yves Chabal, University of Texas, Dallas, “for his exceptional studies of vibrations at surfaces, especially the development and application of surface infrared spectroscopy to understand the physics and chemistry of hydrogenterminated silicon and atomic layer deposition” Yves Chabal currently holds a Texas Instrument Distinguished University Chair in Nanoelectronics and is department Head of Materials Science and Engineering at the University of Texas at Dallas. He obtained a BA in Physics from Princeton University in 1974, and a Ph.D. in Physics from Cornell University in 1980 under the guidance of Prof. Al Sievers. He then joined Bell Laboratories as a posdoc under the mentorship of Jack Rowe. He worked at Murray
Hill, New Jersey, from 1980 until 2002 for AT&T, Lucent Technologies (1996) and Agere Systems (2001) in the Surface Physics, Optical Physics and Materials Science departments where he developed sensitive spectroscopic methods to characterize surfaces and interfaces. In 2003, he joined Rutgers University as Professor in Chemistry and Biomedical Engineering, where he expanded his research into new methods of film growth, bio-sensoring, and energy applications. He directed the Laboratory for Surface Modification, an interdisciplinary Center to promote large initiatives. He joined UT Dallas in January 2008 to lead the Materials Science and Engineering department in the Erik Jonsson Engineering School. Yves’s scientific preparation was marked by strong training in spectroscopy from Steve Schnatterly at Princeton, Al Sievers at Cornell, and Jack Rowe at Bell Labs. In addition to the unique and stimulating environment of Bell Labs, his career has benefited enormously from strong and sustained mentorship by Jack Rowe, support and collaborations from colleagues like Don Hamann, John Tully, Mark Cardillo and Gregg Higashi and many others at Bell Labs, including outstanding postdocs and students who joined his group. Among them, Janice Reutt-Robey, Melissa Hines, Kate Queeney and Sandrine Rivillon have played a key role in shifting his focus from UHV studies of surface structure and dynamics to surface kinetics and chemistry, including wet-chemical modification of semiconductor surfaces. In fact, the discovery with Gregg Higashi of a wet-chemical process to make atomically flat H-terminated Si(111) surfaces with higher structural quality than any Si(111) surfaces prepared in vacuum engaged him into a fascinating journey to understand the etching process and the means of chemically functionalizing such stable surfaces. Thus, while the first part of his career was marked by structural and dynamical studies of hydrogen and small molecules at surfaces, the second has focused on hydrogen passivation or oxidation of semiconductor surfaces, and their subsequent functionalization using both gas and liquid phase processes. In all these areas, his work has emphasized elementary processes, often studied on remarkably homogeneous model surfaces. The fundamental thus derived has contributed to front end processing in microelectronics process, including atomic layer deposition, and now stands as the basis for interesting energy applications, such as photovoltaic and fuel cells, and sensing applications, such as electronic-based biosensors. The energy crisis has motivated him to expand his research into new directions of interest to the Department of Energy, such as hydrogen storage and carbon capture in complex materials. UT Dallas has provided Yves with exceptional facilities for research, and he continues to enjoy and benefit from wonderful students, postdocs and colleagues with highly multidisciplinary and multicultural backgrounds.
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ALBERT NERKEN AWARD The Albert Nerken Award was established in 1984 by Veeco Instruments, Inc. in recognition of its founder, Albert Nerken, a founding member of AVS. Albert Nerken’s work was in the field of high vacuum and leak detection and he made contributions to the commercial development of the instrumentation. The Albert Nerken Award is presented to recognize outstanding contributions to the solution of technological problems in areas of interest to AVS. The award consists of a cash award, a certificate and an honorary lectureship at a regular session of the International Symposium.
SVEN TOUGAARD Dr. Sven Tougaard, University of Southern Denmark, “for the development of advanced methods to characterize thin-film nanostructures by X-ray photoelectron spectroscopy” Sven Tougaard received a MS from the Technical University at Copenhagen in 1975, and a PhD from Odense University, Denmark in 1979. In 1979-84 he was post. doc. at the University of Houston, at Odense University, and at Universität Osnabrück, Germany. Since 1984 he has been professor at University of Southern Denmark. One of his main research interests has been the development of improved quantitative procedures for XPS and AES analysis. He developed new methods to correct AES and XPS spectra for the background of inelastically scattered electrons and proposed models to obtain quantitative information on the depth distribution of atoms in the 0-10 nm depth range from analyses of the inelastically scattered electrons. Recognizing the importance of accurate inelastic scattering cross sections to exploit the full potentials of his algorithms, he then started theoretical calculations of inelastic cross sections for a wide range of materials within a dielectric response description and he also developed a new experimental method, which is now widely used, to determine the inelastic cross section experimentally from analysis of reflected electron energy loss spectra (REELS). To make the formalism more suitable for practical quantitative XPS analysis he invented the Universal cross sections which are now widely used. Prof.
Tougaard and his coworkers tested the validity of his method for nanostructure and thin-film analysis by performing a series of critical experiments that also involved comparisons with other quantitative techniques such as the quartz crystal microbalance, Rutherford backscattering spectroscopy, X-ray fluorescence, TEM, and atomic force microscopy. His methods are nondestructive and provide information that is in many cases hardly possible to get with other techniques. As the analysis is done with a single XPS spectrum, phenomena can be studied as they happen with a near real time resolution and examples of studies include chemical reactions, diffusion and thin film growth mechanisms. Lately he has developed new algorithms which are aimed at automated XPS analysis. With coworkers he has demonstrated that these algorithms can also be applied to make 3-D XPS images of surface nano-structures. More recently, he has together with co-workers developed a new effective algorithm to extract the dielectric function of nanometer thin films from analysis of REELS. This quantity is hard to obtain with other methods and they have applied this to determine dielectric properties of the new gate-oxide films. He is also developing dielectric-response models to investigate the influence on the fundamental excitations in XPS and AES spectra caused by interactions with the core-hole and the surface. In parallel with the development of the complex theoretical algorithms, he has made these generally available for the practical analyst by producing user friendly software packages which he distributes through the QUASES software company which he founded in 1994. They are used worldwide by researchers in academics and industry. Prof. Tougaard has been Editorial Board Member of the Journal of Electron Spectroscopy and Related Phenomena from 19902012 and serves on the Editorial boards of the following journals: Surface and Interface Analysis (since 1989), Journal of Surface Analysis (since 1994), and Surface Science Spectra (since 1991). He is a member of Steering Committee for ECASIA. He has participated in and conducted several EU supported international projects and has a long-standing active scientific collaboration with several research institutes in Europe, USA, Korea and Japan. He has published more than 200 journal papers, with more than 4800 citations, presented more than 50 invited talks at international conferences and workshops and served on the program committees and advisory boards for more than 20 international conferences and workshops.
GAEDE-LANGMUIR AWARD The Gaede-Langmuir Award was established in 1977 by an endowing grant from Dr. Kenneth C.D. Hickman. It is presented to recognize and encourage outstanding discoveries and inventions in the sciences and technologies of interest to AVS. The award is conferred biennially as a suitable candidate may be identified. It consists of a cash award, a commemorative plaque stating the nature of the award, and an honorary lectureship at a regular session of the International Symposium.
DIETRICH MENZEL Prof. Dietrich Menzel, Fritz Haber Institute, Max-Planck Society and Technical University Muenchen, Germany, “for major ground breaking and sustained contributions towards a comprehensive understanding of the energy transfer processes influencing the physical and chemical behavior of atomic and molecular species on metal surfaces” Dietrich Menzel is professor emeritus at the Physik-Department, Technical University of Munich (TUM) in Garching/Germany, and an external scientific member of the Fritz-HaberInstitut, Max-Planck Society, in Berlin/Germany. He has been an important contributor to the development of present day surface science from early on, and contributed insights in many aspects of the chemical physics of adsorbates and coadsorbates, and of basic surface reactions. He has carried out research in surface science and nanoparticles in Berlin, Munich, and Trieste. He has published over 380 research papers with around 14500 citations. He holds a Diploma in Chemistry in 1959, and a Ph.D. degree in Physical Chemistry in 1962, from Technische Hochschule Darmstadt (THD), Germany. From 1962 to 1964 he was a postdoc with Robert Gomer at the James Franck
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Institute, University of Chicago, where he did ground-breaking research on electronically induced desorption. He then moved back to THD and got his Habilitation in 1967. In 1969 he moved to Munich as a group leader in the Institute of Physical Chemistry of TUM. In 1973 he became a newly created chair professor for Surface Physics at the Physik-Department of TUM which he held to his retirement in 2003. In these 30 years he worked on adsorption and desorption kinetics and dynamics, electronic and vibrational structure of adsorbates, electronically induced surface reactivity, surface geometry, and ultrafast surface processes. Often he and his group developed new instrumentation. In the last years he has also worked on metal nanoparticles (in Berlin) and on graphene surfaces (in Trieste); in Munich he is participating in a collaborative research project on attosecond electron spectroscopy. Many of his projects involed synchrotron radiation (SR) sources at several locations. In this connection he was a member of various governing and advisory bodies of the SR sources including BESSY and DESY in Germany, and Elettra in Italy. He has also worked at SSRL in Stanford and at the ALS in Berkeley. He has many international collaborative efforts with experimental and theoretical groups in Europe, America, and Asia. He has been a member of advisory and organising committees of numerous international conferences. He has received several prestigious awards including “Akademiepreis in Chemistry”, Academy of Sciences at Goettingen 1969; External scientific member of Fritz-Haber Institute, MaxPlanck Society 1989; Max-Planck Research Prize for International Cooperation 1997; honorary doctorate from Dalhousie University, Halifax/Canada 1999; “Robert Wichard Pohl Prize” of the German Physical Society 2000; Fellow, Royal Society of Chemistry, London 2009; “Microprobe Analysis Award”, Japanese Society for the Promotion of Science 2011; and Fellow of Elettra, Sincrotrone Trieste 2012. An important aspect of his work concerned the education and promotion of young researchers. He educated about 50 Ph.D. students and 100 Diploma (~Master) students and hosted more than 30 postdocs and many visiting scientists and guest professors. More than 15 of his former students or postdocs held or hold professorships or Max-Planck directorships.
PETER MARK MEMORIAL AWARD The Peter Mark Memorial Award was established in 1979 in memory of Dr. Peter Mark who served as Editor of the Journal of Vacuum Science and Technology from 1975 to 1979. The award is presented to a young scientist or engineer (35 years of age or under) for outstanding theoretical or experimental work, at least part of which must have been published in an AVS Journal. The award consists of a cash award, a certificate, and an honorary lectureship at a regular session of the International Symposium.
facile dissociation of molecular hydrogen at individual palladium atoms followed by spillover onto the copper surface, where ultraselective catalysis occurs by virtue of weak binding. The reaction selectivity is in fact much higher than that measured on palladium alone, illustrating the unique synergy of the system. In the area of molecular motors, the Sykes group has demonstrated the world’s first single molecule electric motor. Electrons from a scanning tunneling microscope tip were used to drive the directional motion of a thioether molecule on a copper surface. Surprisingly, the direction and rate of the rotation turned out to be related to the chirality of both the molecule and the tip of the microscope (the electrode), illustrating that the exact geometry and chirality of electrical contacts to molecules can have a large influence on excitation probability, a fact overlooked in all nanoscale electrical devices to date. Charles has been named a Beckman Young Investigator, Research Corporation Cottrell Scholar, IUPAC Young Observer and the Usen Family Career Development Assistant Professor. He is also the recipient of an NSF CAREER award and a Camille Dreyfus Teacher-Scholar Award. He is the author of over 55 peerreviewed publications and has given over 50 invited talks at conferences and universities.
E. CHARLES H. SYKES Dr. E. Charles H. Sykes, Tufts University, “for pioneering atomic-scale studies of chirality, catalysis, and molecular rotation” E. Charles H. Sykes is currently an Associate Professor of Chemistry at Tufts University. Charles got a first class B.S. and M.S. from Oxford University before moving to Cambridge University for a Ph.D. under the supervision of Professor Richard Lambert. His thesis work explored the structure and reactivity of model gold/titania catalysts. He then relocated to the U.S. for postdoctoral fellowships with Professor Paul Weiss at Penn State and Professor Mike Fiddy at the University of North Carolina at Charlotte. His postdoctoral studies were the first to directly image and control the placement of catalytically important subsurface hydrogen in palladium. In 2005 Charles began his independent career as an Assistant Professor of Chemistry at Tufts University. The Sykes group utilizes state of the art scanning probes and surface science instrumentation to study fundamentally and technologically important systems. For example, scanning tunneling microscopy enables visualization of the geometric and electronic properties of catalytically relevant metal alloy surfaces at the nanoscale. Using temperature programmed reaction studies of well-defined model catalyst surfaces structure-property-activity relationships are drawn. The Sykes group recently demonstrated how single palladium atoms can convert the otherwise catalytically inert surface of an inexpensive metal into an ultraselective hydrogenation catalyst. The mechanism involves
GEORGE T. HANYO AWARD The George T. Hanyo Award was established in 1996 by the Kurt J. Lesker Company in the memory of George T. Hanyo, a highly skilled, long-time employee of the company. The award is presented to recognize outstanding performance in technical support of research or development in areas of interest to AVS. It recognizes valuable contributions made by persons outside normal professional circles. Typical nominees should have received mention in the “Acknowledgments” sections of the published papers but, with the possible exception of papers describing new apparatus or procedures, would rarely have been authors or co-authors. The award consists of a cash award and a certificate setting forth the reasons for the award.
PERCY ZAHL
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Dr. Percy Zahl, Brookhaven National Lab., “for outstanding leadership in the development of state-of-the-art, open-source software package and associated hardware for data acquisition and analysis in scanning probe microscopy and spectroscopy” Percy Zahl is a Scientific Associate in the Center for Functional Nanomaterials at Brookhaven National Laboratory. Besides research on surface science, molecular nanostructures and catalysis using scanning probe microscopy (SPM), his primary interest focuses on SPM instrument and technique development. He recently designed and built a “Nanostencil” in-situ nanopatterning system. His most extensive development has been the “Gxsm Project”, an open source system for DSP based SPM system control and large scale multidimensional data acquisition and analysis [http://gxsm.sourceforge.net]. He has been the leader of this project for more than a decade. Born in Germany, Dr. Zahl studied Physics at the University of Hannover, Germany. In 1996, as a diploma student in the group of Prof. M. Horn-von Hoegen, he installed a commercial scanning tunneling microscope and developed the instrument control and data acquisition software, which marked the birth of the “Gxsm Project”. In 2000 he received a Ph.D. in Physics for research on surface stress in heteroepitaxial films and the development of a system for insitu surface stress and morphology measurement. At the same time, he decided to continue developing “Gxsm” as an open source software project under the terms of the GUN General Public License, so as to centrally manage and maintain the project and avoid a detrimental divergence of the code at different user laboratories. Following postdoctoral appointments at the Colorado School of Mines in Golden, Colorado, and at IBM Zurich Research Laboratory in Switzerland, during which “Gxsm” underwent extensive further development and testing in active research projects, Dr. Zahl joined the group of Dr. Peter Sutter at Brookhaven’s Center for Functional Nanomaterials in 2005. Today his main responsibilities include the operation and maintenance of cryogenic SPM and UHV Nanoprobe instruments, and the support of external users on these systems. He actively continues work on the “Gxsm Project” as the primary project administrator, maintains a related discussion forum and continually implements new features to keep the project at the forefront of ever changing research needs, as well as compatible with the latest hardware developments. Dr. Zahl is the author of over 30 journal publications and holds one US patent.
AVS GRADUATE STUDENT AWARDS 2012 NATIONAL STUDENT AWARD FINALISTS There are five (5) top-level named Graduate Student Awards and three (3) Graduate Research Awards, described below. The recipients of these awards are determined after a general competition with all the graduate research applicants and a presentation to the Awards Committee at the International Symposium. The finalists are: Justin Abell, University of Georgia Ting Ying Chung, Univ. of California, Berkeley April Jewell, Tufts University Nour Nijem, Univ. of Texas, Dallas David Reid, Univ. of Central Florida Davide Sangiovanni, Linkoping University Afsoon Soudi, Washington State University Weiting Yu, University of Delaware RUSSELL AND SIGURD VARIAN AWARD The Russell and Sigurd Varian Award was established in 1982 to commemorate the pioneering work of Russell and Sigurd Varian. It is presented to recognize and
encourage excellence in graduate studies in the sciences and technologies of interest to AVS. The award is supported by Varian, Inc. It consists of a cash award, a certificate, and reimbursed travel support to attend the International Symposium. NELLIE YEOH WHETTEN AWARD The Nellie Yeoh Whetten Award was established in 1989, in the spirit of Nellie Yeoh Whetten, to recognize and encourage excellence by women in graduate studies in the sciences and technologies of interest to AVS. A fund to support the award was established by Timothy J. Whetten, friends and family of Nellie Yeoh Whetten, and AVS. The award consists of a cash award, a certificate, and reimbursed travel support to attend the International Symposium.
dent of AVS in 1974 and held other positions of responsibility in the Society. The award consists of a cash award, a certificate, and reimbursed travel support to attend the International Symposium. DOROTHY M. AND EARL S. HOFFMAN SCHOLARSHIPS The Dorothy M. and Earl S. Hoffman Scholarships were established in 2002 to recognize and encourage excellence in graduate studies in the sciences and technologies of interest to AVS. They are funded by a bequest from Dorothy M. Hoffman. The scholarships consist of a cash award, a certificate, and reimbursed travel support to attend the International Symposium.
GRADUATE RESEARCH AWARDS DOROTHY M. AND EARL S. HOFFMAN AWARD The Dorothy M. and Earl S. Hoffman Award was established in 2002 to recognize and encourage excellence in graduate studies in the sciences and technologies of interest to AVS. It is funded by a bequest from Dorothy M. Hoffman, who was presi-
The Graduate Research Awards were established in 1984 to recognize and encourage excellence in graduate studies in the sciences and technologies of interest to AVS. Each consists of a cash award, a certificate, and reimbursed travel support to attend the International Symposium.
AVS FELLOWS The membership level designated “Fellow of the Society” was established in 1993 to recognize members who have made sustained and outstanding scientific and technical contributions in areas of interest to AVS. These contributions can be in research, engineering, technical advancement, academic education or managerial leadership. This is a prestigious membership level to which members are elected. AVS Fellows receive a certificate.
2012 AVS FELLOWS Lee Chen, Tokyo Electron America
Christian Mitterer, University of Leoben
Andrew Gellman, Carnegie Mellon University
Sudipta Seal, University of Central Florida
Rachel S.Goldman, University of Michigan
William F. Stickle, Hewlett Packard
Mark Hersam, Northwestern University
Roland Wiesendanger, University of Hamburg
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Develop Your Leadership Skills Broaden & Share Your Knowledge Enhance Your Career
AVS Student Activities
Did you know that 25% of AVS membership is comprised of students? You represent the future of AVS and we encourage you to take advantage of the following opportunities and services:
Student Chapters
AVS has several Student University Chapters, each with the goal of generating student interest in a range of science and technology topics of interest to AVS. Student Chapters provide an avenue to meet other students and professionals. It’s a great way to make friends and start forming a network of contacts that can help you throughout your career. Meet future employers and colleagues through meetings and other chapter activities.
Student Awards
AVS has many Student Awards both at the National and Divisional level. The AVS National Student Awards include five (5) top-level awards and multiple Graduate Research Awards (GRAs). All AVS National Student Awards are presented at the Awards Ceremony at the International Symposium. They include travel support as well as a cash award. In addition students may apply for a national student award and one Division/Group Award in a given year.
Career Services
The AVS Online Career Center (Weddle’s Top 100 website) is part of the Physics Today Career Network. Jobs and resumes are shared with four partner job boards - Physics Today Jobs, the American Association of Physics Teachers (AAPT) and American Physical Society (APS) Career Centers, and the IEEE Computer Society Jobs board. Connect with the finest job seekers and companies in physics, engineering, vacuum science, and technology. AVS also offers an annual Onsite Career Center/Mini Job Fair at the AVS International Symposium and Exhibition for the purpose of connecting job seekers with potential employers to facilitate contact and networking during the Conference. A great opportunity to meet with potential employers and gain interviewing skills.
Short Courses
AVS Short Courses not only facilitate student/instructor interactions, but provide networking opportunities with peers. In addition, several AVS Chapters host courses regionally. For a complete list of short course at a student discount rate please visit our short course section.
AVS Publications
AVS publishes four journals on a variety of topics. Explore our journals in the AVS Publications Digital Library and take advantage of our newest feature i-AVS.
Stay Connected
Join our online Facebook or LinkedIn communities.
www.avs.org 212-248-0200
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As a student member, AVS has given me the opportunity to present my work at the local and national level, meet some great contacts, and develop the skills I need to be successful.
”
Peter Palomaki, Ph.D. Candidate, Rensselaer Polytechnic Institute
E n h a n c e Yo u r C a r e e r G a i n R e c o g n i t i o n D e v e l o p Yo u r L e a d e r s h i p S k i l l s
Develop Your Leadership Skills Broaden & Share Your Knowledge
D e v e l o p Yo u r L e a d e r s h i p S k i l l s E n h a n c e Yo u r C a r e e r
DIVISION AWARDS Morton M. Traum Surface Science Division Student Award The Surface Science Student Award was initiated in 1981. Morton M. Traum, then chair of the Surface Science Division, was the prime motivator in establishing the award. After Mort’s untimely death on 1 December 1982, the Executive Committee of the Surface Science Division renamed the award in his memory. The Morton M. Traum Surface Science Division Student Award is presented annually for the best student paper based on work leading to a Ph.D thesis. The papers are judged on technical content and quality of presentation. The 2012 winner will be announced in the Traum Student Award Ceremony, to be held on Thursday, November 1 at noon immediately following the Thursday morning session.
Past winners: 1981 1982 1983 1984 1985 1986 1987 1988
Eric Stuve Steven Gates Ann Smith Hans Gossman Duane Outka Greg Sitz Michael Henderson Jeff Hanson
1989 1990 1991 1992 1993 1994 1995 1996
Yunong (Neal) Yang Benjamin Wiegand David Peale Chaochin Su Anna Swan Bert M. Müller Frank Zimmermann Joseph Carpinelli
1997 1998 1999 2000 2001 2002 2003 2004
Barry Stipe Alexander Bogicevic Jongin Hahn Anders Carlsson Jeppe Vang Lauritsen Seth B. Darling Marcel A. Wall Emrah Ozensoy
2005 2006 2007 2008 2009 2010 2011
Jan Haubrich Petro Maksymovych Bogdan Diaconescu Jeibin Sun Qing Hua Heather Tierney David Siegel
John Coburn and Harold Winters Student Award in Plasma Science and Technology In 1994, the Plasma Science and Technology Division established the Coburn and Winters Award in honor of John Coburn and Harold Winters. Coburn and Winters have made pioneering contributions to the field of plasma science, especially in plasma processing and plasma-surface interactions. Their work has provided inspiration for countless students entering the field of plasma science and they have enhanced the graduate experiences of students by both example and mentorship. The Coburn-Winters Award winner will be announced at 2:00 p.m. in the Thursday, November 1 afternoon session.
Past winners: 1994 1995 1996 1997 1998
Bruce Kellerman Not Given Jane Chang Mikhail Malyshev Catherine Labelle
1999 2000 2001 2002 2003
Erwin Kessels Siva Kanakasabapathy Nicholas Fuller Lin Sha Jan Benedikt
2004 2005 2006 2007 2008
Jun Belen Joseph Végh Lin Xu Joydeep Guha Emile Despiau-Pujo
2009 2010 2011
Yang Yang Bhavin Jariwala Harald B. Profijt
Leo M. Falicov Student Award The Leo M. Falicov Student Award has been established in memory of Prof. Leo M. Falicov to recognize outstanding research performed by a graduate student in areas of interest to the Magnetic Interfaces and Nanostructures Division. Finalists will be selected on the basis of abstract submission, and will each receive an award upon attending the AVS 59th International Symposium and Exhibition and presenting their paper in an oral session. The Best Student Paper Award winner will be selected on the basis of the oral presentation, considering quality of research and clarity of presentation.
Past winners: 1999 2000
W.H. Rippard R.D. Portugal 2001 D.B. Schultz
2002 2003 2004 2005
E.L. Biizdaca Tiffany Kaspar Maria Torija Jessica Hilton
2006 2007 2007 2008
Randy Dumas David Wisbey John Strachan Zhuhua Cai
2009 2010 2011
Wei Han Kangkang Wang Juan Colon-Santana
Paul H. Holloway Young Investigator Award The Thin Film Division is pleased to announce Franklin Tao of the Univ. of Notre Dame is the 2012 awardee of the Paul H. Holloway Young Investigator Award. Professor Tao has been given the award for his contributions to the understanding of surface and interfacial processes in thin film and nano-materials systems, based on the development of instrumentation for structural and electronic property characterization of surfaces under catalytically relevant conditions. This award is named after Prof. Paul H. Holloway of the University of Florida who has a distinguished and continuing career of scholarship and service to AVS. The nominee is a young scientist or engineer who has contributed outstanding theoretical and experimental work in an area important to the Thin Film Division of AVS. The nominee’s Ph.D. or equivalent degree must have been earned less than 7 years prior to January 1 of the award year. The award consists of a cash prize, a certificate citing the accomplishments of the recipient, and an honorary lecture at one of the TFD oral sessions at the International Symposium.
Past winners: 2009 Suneel Kodambaka, UCLA 2010 O. Martin Ntwaaborwa, Univ. of the Free State, South Africa
2011 Sumit Agarwal Colorado School of Mines
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DIVISION AWARDS Nanometer-scale Science and Technology Division Student Award The Nanometer-scale Science and Technology Division (NSTD) Student Award was established in 1998 to bring recognition to outstanding dissertation work by students giving oral presentations in NSTD sessions at AVS International Symposia. In addition to presenting their work in the standard NSTD sessions, student finalists will also present their talks at the NSTD student competition. The NSTD student competition is open to the public and will be held at noon on Wednesday of the symposium in the same room as the standard NSTD sessions. The winner will be selected based on the quality of the talk, the responses to questions, and the level of the research. The winner will be announced at the close of the student competition.
Past winners: 2002 Jeremy Steinshinder 2003 Cheol-Soo Yang 2004 Qiguang Li 2005 Kiu-Yuen Tse 2006 Tracie Colburn
2006 Dirk Weber 2007 Jacob Palmer 2008 Qing Hua 2009 Mehmet Baykara 2010 Farzad Behafarid
2011
Justice Alaboson
Nanometer-scale Science and Technology Division Recognition Award The Nanotechnology Recognition Award recognizes members of NSTD for outstanding scientific and technical contributions in the science of nanometer-scale structures, technology transfer involving nanometer-scale structures, and/or the promotion and dissemination of knowledge and development in these areas. The Award will be presented before the recipient’s talk at the AVS International Symposium. The 2012 Awardee is Flemming Besenbacher.
Past winners: 2001 Nancy Burnham 2004 Harold Craighead 2009 Joseph Stroscio
2010 Roland Wiesendanger 2011 Phaedon Avouris
Get Involved in AVS If you have any questions about AVS or want to know how to get involved, please contact AVS directly at
[email protected]
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The AVS Exhibition offers a vibrant display of the latest products and services available in the industry. Exhibitor Technology Spotlight Sessions take place during session breaks during exhibit days in addition to a variety of other activities including free caricatures, massages, raffles, career center, e-mail pavilion, free coffee, lunches and much more. Visit the Exhibits!
FREE EXHIBIT HALL ATTRACTIONS AVS Career Center AVS Membership & Education Booth
ages
Mass
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atur Caric
Morning Coffee Free Lunch Technology Spotlight Sessions Free Afternoon Refreshments Art Zone Display & Competition Daily Raffle Drawings
Daily
AVS Store: Gifts/Souvenirs/Supplies
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Raffl
Ask The Experts - Vacuum Technology Internet Access Caricatures Massages Leeds History Display
E X HI B I T F I N AL E
EXHIBIT SCHEDULE
T HURSDAY 12 PM - 2 PM
Exhibits Open October 30 - November 1
EVENTS: •Free Lunch & Refreshments •Art Contest Prize Winners •Raffle Drawings & MORE!
Join Us !
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Oct. 30
Tuesday
10am - 5:30pm
Oct. 31
Wednesday
10am - 4:30pm
Nov. 1
Thursday
10am - 2:00pm
EXHIBIT FINALE, THURSDAY 12PM - 2PM
AVS-59
E XH IB ITO R S Company Name A&N Corporation Accu-Glass Products Inc. Advanced Chemical Company Agilent Technologies, Vacuum Products Division AJA International, Inc. Alicat Scientific, Inc. American Institute of Physics Anasys Instruments Angstrom Scientific Inc Annealsys Applied Surface Technologies Association of Vacuum Equipment Manufacturers Asylum Research Atlas Technologies AVS - Ask The Experts AVS Special Events AVS Art Zone & Contest AVS Career Center AVS Membership & Education AVS Raffle Zone AVS E-Mail Pavilion AVS Exhibitor Technology AVS Foosball Tournament AVS Future Sites AVS History Booth AVS Publications BellowsTech, LLC Beneq BJA Magnetics Brooks Automation Bruker AXS, Inc. Bruker Corporation Bruker Optics, Inc. Cambridge NanoTech, Inc. CAMECA Instruments, Inc. Capitol Vacuum Carl Zeiss Microscopy, LLC CeramTec North America COSMOTEC Corporation CVD Equipment Corporation Denton Vacuum LLC Duniway Stockroom Corporation Eagle Instrument Services Ebara Technologies Edwards Vacuum Elsevier (NY) ESI
Current as of September, 2012
Company Name Extrel CMS FEI Company Friatec N.A. LLC Gamma Vacuum Glas-Col. HeatWave Labs Inc. Heidelberg Instruments, Inc Hiden Analytical, Inc. Hine Automation Horiba Scientific Huettinger Electronic Impedans Ltd. Inland Vacuum Industries, Inc. Innovative Vacuum Solutions Inc. InstruTech, Inc. Intel Corporation ION-TOF USA J.A. Woollam Co., Inc. Julabo USA, Inc. Kashiyama-USA Inc. Kemstream Kimball Physics Inc. KP Technology Kratos Analytical Kurdex Corporation Kurt J Lesker Company Labtec Sales Partners LLC Lam Research Mantis Deposition Ltd McAllister Technical Services McVac Manufacturing MDC Vacuum Products, LLC MEWASA North America, Inc. Micromatter MKS Instruments Mustang Vacuum Systems National Nanotechnology Infrastructure Network (NNIN) Nonsequitur Technologies Nor-Cal Products, Inc. Omicron Nanotechnology USA Omley Industries, Inc. Oxford Instruments - Austin Pfeiffer Vacuum Technology, Inc. PHPK Technologies Physical Electronics Physics Today - Exhibitor Lounge Phytron, Inc. Plasmaterials, Inc.
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Company Name Plasma-Therm Precision Ceramics USA Precision Plus Vacuum Parts Prevac sp. z o.o. PVD Products R.D. Mathis Company RBD Instruments, Inc. Refining Systems RF VII Inc. RHK Technology Inc. Rocky Mountain Vacuum Tech., Inc. SAES Getters USA Scientific Instrument Services, Inc. Semicore Equipment, Inc. Semilab SDI LLC Shanghai Joysun Machinery & Electric Equipment Manufacture Co. Shimadzu Precision Instruments Shimadzu Scientific Instruments Solid Sealing Technology, Inc. SPECS Surface Nano Analysis, Inc. SPI Supplies Springer Staib Instruments Sumitomo (SHI) Cryogenics of America Inc. Super Conductor Materials Sycon Instruments, Inc. Synergy Systems Corporation Synergy Vacuum, Inc. Tech-X Corporation Ted Pella, Inc. Telemark TGM Inc. Thermionics Vacuum Products Thermo Scientific Torr Scientific Tracs Chillers Transfer Engineering & Manufacturing, Inc. Trek, Inc. UC Components Vacuubrand, Inc. Vacuum Research Corp. Value Mechanical & Electrical Products Co., Ltd. VAT VG Scienta Welch-Ilmvac Wiley Yugyokuen Ceramics Co., Ltd. Zeon Chemicals L.P.
Bold Listings: Corporate Members & Sponsors
TECHNOLOGY SPOTLIGHT SESSIONS AVS Exhibitor Technology Spotlight Sessions Stage Area of Exhibit Hall - Booth 701 • Tampa Convention Center Twenty minute interactive presentations scheduled during the technical session breaks in the Stage Area of the exhibit hall. Gain insight to the latest technology, products and services offered by the exhibitors.
F r e e A d m i s s i o n & F r e e AV S - 5 9 S o u v e n i r s w h i l e t h e y l a s t ! TUESDAY, OCTOBER 30
WEDNESDAY, OCTOBER 31 (Continued)
10:00AM CARL ZEISS ORION Nanofab: Fabricating sub 10 nm Nanostructures using the Helium Ion Microscope
12:00PM MANTIS DEPOSITION Nanoparticle Coating Technology for Vacuum Deposition
10:20AM ASYLUM AM-FM and Loss Tangent Imaging–Two New Tools for Quantitative Nanomechanical Properties
12:20PM SEMICORE Using the Ipad in PVD Applications 12:40PM ESI Physics-based Simulation for Semiconductor Processing Optimization
12:00PM BRUKER Selecting the Best Metrology Method for Monitoring Thin Film Deposition
1:00PM MEWASA NORTH AMERICA, INC. Passive Thermal Actuator
12:20PM THERMO FISHER SCIENTIFIC Complementary Nature of XPS and Raman Techniques
1:20PM HUETTINGER Bipolar Technoloogy for AZO Sputtering
12:40PM THERMO FISHER SCIENTIFIC Multi-Dimensional XPS Profiling from Thermo Fisher Scientific
1:40PM KP TECHNOLOGY Novel Dual Mode Air Photoemission and Kelvin Probe System for Work Function Analysis of Nanometer Films
1:00PM KRATOS ANALYTICAL Organic Depth Profiling using XPS – Pro’s and Con’s of Different Polyatomic Species 1:20PM PHYSICAL ELECTRONICS The latest innovations in XPS, AES, and TOF-SIMS instrumentation from Physical Electronics will be presented. 1:40PM SPECS SURFACE NANO ANALYSIS GmbH KolibriSensor and Tyto: New Milestones in Scanning Probe Microscopy
3:20PM HEIDELBERG Heidelberg Instruments microPG501, A Direct Write Lithography tool 3:40PM PLASMA-THERM Dry Etching Enabling Surface Texturing for Thin Substrate Solar Cells
THURSDAY, NOVEMBER 1:
3:20PM SAES GETTERS NEG Pumps Improving the Performance of Vacuum Systems
10:20AM BRUKER Selecting the Best Metrology Method for Monitoring Thin Film Deposition
3:40PM KURT J. LESKER COMPANY New Developments in Thin Film Deposition from Kurt J. Lesker Company®
12:00PM MULTI-VENDOR PANEL DISCUSSION ON XPS IMAGING Join this special session featuring the leading manufacturers of XPS instrumentation as they present their own XPS imaging methods and advantages – as they see them! A Q&A session will follow to address audience questions and perhaps some bantering amongst the presenters themselves! This will be an exciting event – don’t miss it ! Participating Companies: KRATOS • PHYSICAL ELECTRONICS THERMO • OMICRON
WEDNESDAY, OCTOBER 31 10:00AM
EDWARDS
10:20AM BROOKS AUTOMATION Mass Spectrometer Now Supports Process Control
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ASK THE EXPERTS !!!!!! Troubleshooting Mysteries?
Contamination Problems?
System Configuration Questions?
Just Wanna Make Your Vacuum Better? What is the best gauge for the 10-11 Torr Range?
What is my RGA telling me?
How do I control, eliminate water?
How do I detect a Virtual Leak?
Problems with troubleshooting, process control, contamination or just want to bounce an idea off other people in the vacuum field? Maybe all our years of experience, successes and failures can help point you in the right direction or spark an idea! Ask the Experts is an unbiased, open forum with the resources and the desire to discuss and help solve vacuum related issues.
Ask the Exper ts!... Exhibit Hall Booth # 528 Sponsored by Duniway Stockroom, SAES Getters & Brooks Automation Hosted by the AVS Vacuum Technology Division
Free Gift
for our visitors! while supplies last
Archives and online discussion forum year round at www.avs.org/forum.aspx
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Exhibit Hall • Booth 528
SYMPOSIUM PLENARY LECTURE “The BP Oil Spill in the Gulf of Mexico: Are Microbes Helping to Clean up the Mess? Monday, October 29, 2012, 12:00 Noon Ballroom B, Tampa Convention Center
Joel E. Kostka, Georgia Institute of Technology he Gulf of Mexico is more important to Americans than you might think. It provides 30% of GDP, 90% of offshore oil and gas, and 33% of seafood in the U.S, easily demonstrating that the economy of the Gulf is closely intertwined with the extraction and preservation of natural resources. The Deepwater Horizon (DH) accident resulted in a massive insult to already stressed Gulf ecosystems. While the immediate and acute effects of the DH oil spill have been intensively studied, chronic effects to Gulf ecosystems remain largely unknown. Only a fraction of the released oil and gas has been accounted for, making current research critical for finding out where the oil went and what long-term effects it will have on sensitive Gulf ecosystems. In addition, the risk of accidental oil discharge remains high for the foreseeable future as increased economic pressure to access new oil reserves in deep marine waters will require less tested technologies. It is not a question of “whether” another major spill will happen but rather “when” it will occur. Thus, current research will provide vital data and modeling in support improved response efforts for future spills. This presentation will report on more than 2 years of research directed toward the fate and impacts of petroleum hydrocarbons from the DH discharge in coastal Gulf ecosystems. Further, the talk will discuss ongoing research by the Gulf of Mexico Research Initiative and the role of technological development in oil spill response efforts.
T
r. Kostka leads an internationally recognized research program in the areas of environmental microbiology and biogeochemistry, first at Florida State University and, now, at the Georgia Institute of Technology. He has served on 11 national or international review panels for energy and environmental research and on the steering committee (as coPI) of the FSU-led, $20 million consortium “Deep-C: Deepsea to Coast Connectivity in the Eastern Gulf of Mexico” funded by the Gulf of Mexico Research Initiative. In 2010, he served as co-PI on an NSF Rapid project studying the impact of Deepwater Horizon crude oil on biogeochemical processes in Florida sandy beaches. In 2011, Dr. Kostka coauthored a report from the American Academy of Microbiology entitled, “Microbes and Oil Spills: Frequently Asked Questions,” to provide science-based information to stakeholders on the importance of the microbiologically catalyzed biodegradation of oil in marine environments. He also serves as editor of the Journal of Applied and Environmental Microbiology and was recently named Chair of the Microbial Ecology Division of the American Society for Microbiology.
D
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TECHNICAL PROGRAM The AVS 59th International Symposium and Exhibition will be held at the Tampa Convention Center in Tampa, FL, October 28 through November 2, 2012. Once again our technical program is second to none, providing cutting-edge content over a very broad range of diverse yet complementary topics. Brief summaries of each program theme are provided below, with the full schedule of oral and poster presentations following them. Note the amazing list of distinguished invited speakers in each program. They represent the best and the brightest work from around the world, from industrial, academic, and governmental research labs. The end result is a program that consists of more than 1300 talks presented in over 140 oral sessions and two evenings of poster sessions. Start filling your week’s schedule with must-see, career enhancing sessions.
EXHIBITS This year’s exhibition showcases equipment and instrumentation needed to perform cutting edge research presented in our technical program. Visit the exhibit hall to speak to experts representing the very best in components, systems, instrumentation, services and consumables. The exhibit hall will be open Tuesday through Thursday, October 30-November 1. There are many attractions in the exhibit hall, including Exhibitor Technology Spotlight Sessions, the AVS Membership & Store, Career Center, Vacuum Technology Division’s “Ask The Experts” booth, E-Mail Pavilion, Free Caricatures, Free Massages, Art Zone/Contest, AVS History Booth, Free coffee, refreshments, lunches, daily raffles and more! During the Thursday lunch break, a special event of the Exhibitor Technology Spotlight Sessions will take place which will include a multi-vendor discussion featuring Kratos Analytical, Thermo, Physical Electronics and Omicron who will present their viewpoints on the best way to perform XPS Imaging. Grab some free lunch and go to the stage area of the exhibit hall to see this historic event!
in Nanostructured Thin Films and Coatings”. The afternoon session deals with Multifunctional Properties of Nanostructured Thin Films and Coatings, with Samir Aouadi from Southern Illinois University, Carbondale, being invited to speak on "Layered Binary Metal Oxide Solid Lubricants for High Temperature Moving Assemblies" and Ali Shakouri from Birck Nanotechnology Center, Purdue University, on “Cost Efficiency Trade Off in Nanostructured Thermoelectric Energy Conversion Systems”. Our session on Tuesday morning on Pulsed Plasmas in Surface Engineering will feature an invited talk by Andre Anders, Lawrence Berkeley National Laboratory, entitled “Strong Localization of Ionization in High Power Impulse Magnetron Sputtering in Reactive and Non-Reactive Gas Environments”. The afternoon session is devoted to Atmospheric Pressure Plasmas, starting with the invited talk of Mounir Laroussi, Old Dominion University on “Plasma Medicine: The Journey of a New Field of Research, from Killing of Bacteria to Killing of Cancer Cells”. In addition to these topics, the Advanced Surface Engineering Session cosponsors additional sessions with the Tribology Focus Topic. CODE
SESSION
SE+NS-MoM
Nanostructured Thin Films and Coatings I: Interface Aspects David Rafaja, Freiberg U of Technology, Germany
SE+NS-MoA
Nanostructured Thin Films and Coatings II: Multifunctional Properties Samir Aouadi, Southern Illinois Univ Carbondale Ali Shakouri, Birck Nanotechnology Ctr, Purdue U
SE+PS-TuM
Pulsed Plasmas in Surface Engineering Andre Anders, Lawrence Berkeley National Lab
SE+PS-TuA
Atmospheric Pressure Plasmas Mounir Laroussi, Old Dominion University
SE-TuP
Advanced Surface Engineering Poster Session
SHORT COURSES The Tampa Convention Center will be the site for the short course program where courses on a variety of topics will be offered. These courses will run concurrently with the AVS Symposium.
APPLIED SURFACE SCIENCE
TECHNICAL PROGRAM ADVANCED SURFACE ENGINEERING The Advanced Surface Engineering Division (SE) focuses its interest on new materials, technologies, characterization, manufacturing, applications, and fundamentals of surface engineering and coating technologies. The SE oral sessions at AVS 59 cover Pulsed Plasmas and HIPIMS/HPPMS, Atmospheric Pressure Plasmas and Treatments, as well as Multifunctional Nanostructured Coatings and Thin Films. These sessions provide a balance between fundamental understanding and applications of these topics. The presentations cover novel coating materials, processes, design and modeling, diagnostics and growth control, structural, chemical, and mechanical characterizations, wear, corrosion, and oxidation protection, thermal stability, and other aspects related to surface engineering and coatings. This year’s program features several invited and numerous contributed talks as well as contributions to the poster session on Tuesday evening. Our program starts on Monday with two joint sessions with the Nanometer-Scale Science and Technology Division on Nanostructured Thin Films and Coatings. The morning session on Interface Aspects opens with an invited lecture by David Rafaja from Freiberg, Germany, on “Interface Phenomena
The Applied Surface Science Division (AS) provides a forum for the discussion of state of the art surface analysis instrumentation and data analysis protocol which are required to analyze and understand the surface and/or interfacial properties of materials. The 2012 AS program runs the entire week and features a mix of core sessions (Quantitative Surface Chemical Analysis) as well as new sessions (Surface Analysis using Synchrotron Techniques). AS is co-sponsoring the Sunday night Biomaterials Plenary Session and strongly supporting the AVS Focus Topics in 2012. AS is leading a new Focus Topic on Scanning Probe Microscopy, leading the In-Situ Microscopy and Spectroscopy Focus Topic, and contributing to many of the other 2012 Focus Topics. We are excited to be co-sponsoring sessions with the Biomaterial Interfaces, Surface Science, Nanometer-scale Science and Technology, Thin Films, and Vacuum Technology Divisions. Everyone is welcome to attend our Tuesday night AS business meeting which will have short capsule presentations by our student award finalists, and a workshop (co-sponsored by the ASTM E42 Committee on Surface Analysis) entitled “XPS and beyond: ISS, UPS, HIM, APT and other TLAs (Three Letter Acronyms)”. AS will be hosting Quantitative Surface Analysis 14 (QSA 14) on Sunday Oct 28 in Room 20 of the Convention Center; the theme of QSA 14 is 2D and 3D Nanomaterials Analysis. QSA 14 will run from 7:30 am through 4 pm. The
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cost for QSA 14 is $115 for full attendee and $70 for students (fee includes continental breakfast, two snacks, lunch, and lively discussions!). QSA registration is being managed within the AVS Symposium registration site; when you register to attend the AVS 59th Annual Symposium and Exhibition, you have the option of registering for QSA 14. We are not accepting on-site registration for QSA 14. We look forward to seeing you in Tampa Florida October 28-November 2, 2012. CODE
SESSION
AS-MoM
Quantitative Surface Chemical Analysis, Technique Development, and Data Interpretation - Part 1 Sven Tougaard, Univ of Southern Denmark* Peter Sherwood, Oklahoma State University
DaeWon Moon (KRISS), Gerd Schneider (BESSY) and Stefan Hell (MPI), exploring the most recent developments in the application of a range of techniques to the bioimaging challenge, including ToF SIMS and MALDI imaging, Xray spectro-microscopic imaging, optical super resolution techniques and CARS for following processes in vivo. This will be followed with the opportunity for further discussion at our regular industry sponsored Plenary Reception, which is a great opportunity to meet old friends and new in preparation for the week ahead. CODE
SESSION
BP+AS-SuA
Biomaterials Plenary - Bioimaging: In Vacuo, In Vitro, In Vivo Stefan Hell, Max-Planck-Institut für Biophysikalische Chemie, Germany DaeWon Moon, Korea Research Institute of Standards and Science Gerd Schneider, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Germany
AS-MoA
Quantitative Surface Chemical Analysis, Technique Development, and Data Interpretation - Part 2 Wayne Jennings, Case Western Reserve Univ
AS+BI-TuM
Practical Surface Analysis Juergen Schnekenburger, Muenster U, Germany
AS+BI-TuA
Surface Analysis of Materials Using Vibrational Techniques (2:00-3:20 pm)/Multi-Technique Analysis (4:00-6:00 pm) Sriram Subramaniam, Natl Cancer Inst, NIH
BI-MoM
Surfaces to Control Cell Response Lance Kam, Columbia University Joachim Spatz, Max Planck Inst for Intelligent Systems & Unive of Heidelberg, Germany
AS-TuP
Applied Surface Science Poster Session
BI-MoA
AS-WeM
Surface Analysis of Biological Materials Using Vibrational & Non Linear Optical Spectroscopy Techniques (8:00-10:00 am)/3D Imaging & Nanochemical Analysis-Part 1 (10:40 am-12:00 pm) Patrick Koelsch, University of Washington Thomas Taubner, RWTH Aachen Univ, Germany Stuart Stock, Northwestern University
Cell-Surface Interactions: High Throughput Methodologies Matthias Lutolf, École Polytechnique Fédérale de Lausanne, Switzerland Carl Simon, NIST
BI+SS+AS-TuM
Biomolecules at Interfaces Thomas Arnebrant, Malmö University, Sweden Rein Ulijn, University of Strathclyde, UK
BI+AS-TuA
Characterization of Biointerfaces Sebastian Maerkl, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland Buddy Ratner, University of Washington
AS+NS+SS+ TF-WeA
3D Imaging & Nanochemical Analysis - Part 2 (2:00-3:20 pm)/Advanced Data Analysis and Instrument Control (4:00-6:00 pm) Emmanuelle Marquis, University of Michigan Max Diem, Northeastern University
AS-ThM
Applications of Large Cluster Ion Beams John Vickerman, The Univ f Manchester, UK
AS-ThA
Applications of Large Cluster Ion Beams - Part 2 (2:00-3:20 pm)/Surface Analysis using Synchrotron Techniques (3:40-5:40 pm) Joseph Woicik, NIST
Biomaterial Interfaces Poster Session Bio/Nano Interfaces with Applications in Biomedicine and Energy Vincent Rotello, University of Massachusetts
ELECTRONIC MATERIALS AND PROCESSING
AS+TF+VT-FrM Surface Analysis using Synchrotron Techniques Laszlo Kövér, MTA ATOMKI, Hungary
BIOMATERIAL INTERFACES In the tradition of the In the tradition of the Biomaterial Interfaces Division (BID), a broad technical program has been established that is focused on progress in biointerface science and engineering which brings together an interdisciplinary group of experts at the intersection of biosurface and interface science, the nanosciences, and biomedical engineering. The BID program will commence on Sunday afternoon with the Biomaterials Plenary (BP) session joining with the Applied Surface Science (AS) division with the theme “Bioimaging: in vacuo, in vitro, in vivo”, exploring the challenges involved with imaging of cells, tissues and the biochemical processes contained within. The event features invited presentations from
*Albert Nerken Award Winner
BI-TuP BI+SS+NS-WeM
The Electronic Materials and Processing Division (EMPD) encompasses the science and engineering of materials and interfaces that advance device technology. EMPD will sponsor eleven oral sessions containing 100 talks and a poster session on electronic materials synthesis, processing, characterization, and structureproperty relationships. Researchers from around the world will present their work on advanced logic and ultra-dense memory devices as well as ultra low power, opto-, and nano-electronics. The themes include electronic, optical, and magnetic properties, interface and defect engineering, and novel materials properties and processing techniques. Six sessions are devoted to high-k, low-k, and memory dielectrics and defects in materials. Highlights include papers by Bob Wallace (UT Dallas) on surface preparation and dielectric growth for graphene-based devices, Clement Merckling (IMEC) on next generation semiconductors for advanced CMOS, Takashi Ando (IBM) on ultimate scaling of high-k gate dielectrics, Hideki Hasegawa (Hokkaido), one of the early stalwarts of dielectrics on
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III-Vs, on Fermi level pinning phenomena at III-V high-k MOS interfaces, Greg Hughes (Dublin) on high energy XPS and electrical characterization of MOS structures on Si, GaAs and InGaAs, Leonard Register (UT Austin) on a novel TFET based on roomtemperature superfluidity in graphene double layers, and Zsolt Tokei (IMEC) on interconnect scaling for 10 nm and beyond. In the area of novel devices and ultra-dense memory, Neil Goldsman (Maryland) will give a talk on micro-antenna coupled nano-MIM diodes. Zlatko Sitar (NC State) will lead off a session on Group IIInitrides with a talk on AlN-based technology for deep UV and highpower applications. A session devoted to semiconductor heterostructures features James Speck (UC Santa Barbara) on heteroepitaxial lattice mismatch stress relaxation in nonpolar and semipolar GaN by dislocation glide and Gene Fitzgerald (MIT) on engineered substrates and lattice mismatched semiconductor devices. On ultra low power electronics, Meishoku Masahara (AIST) will describe an advanced FinFET process for 22nm and beyond. A new session this year on Heusler alloys features a talk by Jeffrey Childress (HGST) on application of magnetic Heusler alloys for ultrahigh-density magnetic recording. In the nanoelectronics area there are featured talks by Roberto Paiella (BU) on tensily strained Ge nanomembranes for applications in Group IV infrared photonics and John Rogers (Illinois) on semiconductor nanomembranes for biomedical applications as well as talks by Gregory Lopinski (NRC) on electrical transport on SOI substrates and Christian Lavoie (IBM) on scaling silicide contacts. The featured talks in hybrid materials this year are Michael Zharnikov (Heidelberg) on electron beam chemical lithography and Jiangeng Xue (Florida) on polymer-colloidal nanocrystal hybrid materials for photovoltaic applications. CODE
SESSION
EM+TF+OX+ High-k Dielectrics for MOSFETs I GR-MoM Serge Oktyabrsky, University at Albany-SUNY John Robertson, Cambridge University, UK Robert Wallace, University of Texas at Dallas EM+TF+OX+ High-k Dielectrics for MOSFETs II GR-MoA Takashi Ando, IBM T.J. Watson Research Center Clement Merckling, IMEC, Belgium EM-TuM
EM-TuA
Electrical Testing and Defects in III-V’s Hideki Hasegawa, Hokkaido U and RIKEN, Japan Greg Hughes, Dublin City University, Ireland Patrick Lenahan, Pennsylvania State University
EM-ThP
Electronic Materials and Processing Poster Session
EM+NS-FrM
Low-Resistance Contacts to Nanoelectronics Christian Lavoie, IBM T.J. Watson Research Ctr Gregory Lopinski, Natl Research Council of Canada
MAGNETIC INTERFACES AND NANOSTRUCTURES The Magnetic Interfaces and Nanostructures Division (MI) program features pioneering, controversial, introductory and emerging results in topical areas related to magnetic interfaces and nanostructures. The 2012 MI program topics include: (1) fundamental problems in magnetism (e.g., are half-metals half-metallic, reduced dimensionality, accounting for and understanding d and f correlation); (2) the forefront of topological insulators; (3) future spintronics, magnetoelectrics, Rashba interactions and all things multiferroic; (4) new probes in magnetic imaging and characterization; (5) biological and molecular-based magnetism; (6) Applications of polarized neutron reflectometry; (7) Spin dynamics in confined structures. The 2012 program highlights electron spin related phenomena at the crossroad of basic and applied science. We are also co-sponsoring the Actinides and Rare Earths (AC), Spins in Graphene (GR), Oxide Interfaces and Heterostructures (OX), and Scanning Probe Microscopy (SP) focus topics. Noted invited speakers anchor each of these topics and topical conferences. The Magnetic Interfaces and Nanostructures Division will be selecting the best graduate student presentation from three finalists for the Leo Falicov Award. The winner of this award will be announced during the break of the Thursday morning session. The division will also offer an award for postdoctoral fellows who will be presenting MIND papers at this year’s International Symposium. CODE
SESSION
MI+EN+ BI-TuA
Fundamental Problems in Magnetism Samuel D. Bader, Argonne National Laboratory and Northwestern University Yuping Bao, The University of Alabama Claudia Mewes, University of Alabama
MI-WeM
Topological Insulators and Rashba Paolo Moras, Istituto di Struttura della MateriaCNR, Trieste, Italy Oliver Rader, Helmholtz-Zentrum Berlin für Materialien und Energie, Germany Tonica Valla, Brookhaven National Laboratory
MI+OX-WeA
Spintronics, Magnetoelectrics, Multiferroics Dmytro Apalkov, Grandis, Inc. Jian-Ping Wang, University of Minnesota
MI+SP+AS-ThM
Emerging Probes in Magnetic Imaging, Reflectometry and Characterization Amlan Biswas, University of Florida Casey Miller, University of South Florida Volker Rose, Argonne National Laboratory Kristiaan Temst, KU Leuven, Belgium
MI-ThP
Magnetic Interfaces and Nanostructures Poster Session
Materials and Processes for Advanced Interconnects Zsolt Tokei, IMEC, Belgium
EM+TF-WeM Hybrid Electronic Materials and Interfaces Jiangeng Xue, University of Florida Michael Zharnikov, Univ of Heidelberg, Germany EM+OX-WeA Oxides and Dielectrics for Novel Devices and Ultradense Memory Neil Goldsman, U of Maryland, CoolCAD Electronics Leonard Register, University of Texas at Austin Grace Xing, University of Notre Dame EM+SS+AS+ NS-ThM
EM+TF+AS-ThA Growth and Characterization of Group III-Nitride Materials Zlatko Sitar, HexaTech & North Carolina State U Christian Wetzel, Rensselaer Polytechnic Institute
Nanoelectronic Interfaces, Materials, and Devices Roberto Paiella, Boston University John Rogers, Univ of Illinois at Urbana Champaign
EM-ThM
Processing for Ultra Low Power Electronics + Semiconductor Heterostructures I Meishoku Masahara, Natl Institute of AIST, Japan James Speck, Univ of California, Santa Barbara
EM+MI-ThA
Semiconductor Heterostructures II + Heusler Alloys Jeffrey R. Childress, HGST San Jose Research Ctr Eugene Fitzgerald, Massachusetts Institute of Tech
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MANUFACTURING SCIENCE AND TECHNOLOGY
CODE
SESSION
This year, the Manufacturing Science and Technology Group will concentrates on the nano-manufacturing challenges in today’s industry in addition to the usual interest on the Spectroscopic Ellipsometry Focus Topic. The challenges facing the nano-manufacturing methods, processes, and systems represent an inherently multidisciplinary set of problems addressing issues that must combine the range of top-down and bottom-up processes available in order to provide multi-scale systems integration. To achieve the necessary economy of scale for large-scale production, new concepts and principles must be envisioned to achieve revolutionary transformation of the existing manufacturing infrastructure. The critical challenges for nano-manufacturing are the need to control assembly of processing nanoscale structures in high-rate/high-volume applications without compromising their inherent properties; and to ensure the long-term reliability of nanostructures through testing and metrics. MSTG will co-sponsor the nanomanufacturing Focus Topic, and emphase on the metrology, defect characterization, scalable devices and processes, ALD, and environmental issues.
MN+AS-MoM
Characterization of Surfaces and Interfaces in MEMS and NEMS Philip Feng, Case Western Reserve University
MN-MoA
Multi-scale Interactions of Materials and Fabrication at the Micro- and Nano-scale Jeevak Parpia, Cornell University
MN-TuM
Optomechanics and Photonic MEMS and NEMS Il Woong Jung, Argonne National Laboratory Marko Loncar, Harvard University
MN-TuP
MEMS and NEMS Poster Session
CODE
SESSION
NM+AS+ MS-MoM
Metrology & Environmental Issues in Nanomanufacturing Henry Everitt, U.S. Army Aviation and Missile Research Development and Engineering Center Vicki Grassian, University of Iowa James Liddle, NIST Sherine Obare, Western Michigan University
NM+NS+MS+ ALD and Scalable Processes for Nanomanufacturing EM-MoA Maitreyee Mahajani, Applied Materials Inc. James Watkins, University of Massachusetts NM+MS-TuM All Invited Session: Challenges of Nanomanufacturing from an Industrial Perspective Michael Hunter, Liquidia Technologies, Inc. David Lazovsky, Intermolecular, Inc. Akihisa Sekiguchi, Tokyo Electron Limited NM-TuP
Topics in Nanomanufacturing Poster Session
MEMS AND NEMS The MEMS and NEMS Technical Group (MN) program will highlight recent advances in emerging areas of micromechanical systems at the micro and nanoscale ranging from fundamental studies of functional, integrated devices to novel applications of micro and nanoelectromechanical systems (MEMS/NEMS). This year’s session will cover many interesting areas which are thematically related to characterization of surfaces and interfaces in MEMS/NEMS, probing dynamical surface and interfacial effects in micro and nanoelectromechanical systems, multi-scale interaction of materials with focus directed towards e-beam and ion beam lithography, pattern transfer and fabrication at the micro- and nano-scale including focused ion beam based micromachining, along with a newly introduced session on optomechanics involving optical actuation of photonic crystal nanocavities and membranes in fabricating photonics MEMS and NEMS. The core topic of discussion includes effect of stress in quality factor and mechanical dissipation is MEMS resonators, fabrication of ultrafast nanomechanical switches based on advanced materials such as SiC and ultrananocrystalline diamond, use of focused ion beam technique to pattern and integrate nanophotonic elements on a MEMS platform, and controlling mechanical actuation in photonic MEMS using light.
NANOMETER-SCALE SCIENCE AND TECHNOLOGY The Nanometer-scale Science and Technology Division (NS) explores the rapidly evolving science and technology enabled by nanoscale structures. Researchers from around the globe will present their work on topics ranging from fabricating atomically precise devices to exploiting nanomaterials for applications in nanophotonics, catalysis, and biological sensing. Multiple themes will be developed such as synthesis and characterization of zerodimensional nanoparticles and quantum dots, one-dimensional nanowires and nanotubes, and two-dimensional nanomaterials. We have invited leading figures who will provide perspective from the forefront of their respective fields and will highlight the sessions on nanoscale imaging and microscopy, nanopatterning and nanolithography, nanoscale catalysis and surface chemistry, nanoparticles and quantum structures, nanowires and nanotubes, nanomaterials in two and three dimensions, and nanophotonics and plasmonics. Additional co-sponsored sessions cover the areas of manufacturing nanoscale devices, nanostructures for energy conversion and storage, nanomechanics, nanotribology, graphene synthesis and applications, transparent conductors, printable electronics, and in-situ scanning probe microscopy and spectroscopy. CODE
SESSION
NS-MoM
Nanoparticles and Quantum Structures Michelle Simmons, U of New South Wales, Australia
NS+SP-MoA
Nanopatterning and Nanolithography Armin Knoll, IBM Research-Zurich, Switzerland
NS+EN-TuM
One-Dimensional Nanowires and Nanotubes Mathias Steiner, IBM TJ Watson Research Ctr
NS+EN+GR-TuA
Nanomaterials in Two and Three Dimensions Manish Chhowalla, Rutgers University Hanadi Sleiman, McGill University, Canada
NS+AS+SS+ SP-WeM
Nanoscale Catalysis and Surface Chemistry Flemming Besenbacher, Aarhus Univ, Denmark Michael White, Brookhaven National Lab
NS-WeA
Nanophotonics and Plasmonics Markus Raschke, University of Colorado Richard Van Duyne, Northwestern University
NS-ThM
Nanoscale Imaging and Microscopy Markus Heyde, Fritz-Haber-Institute, Germany
NS-ThP
Nanometer-scale Science & Technology Poster Session
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PLASMA SCIENCE AND TECHNOLOGY This year’s PSTD program provides a stimulating forum showcasing the latest breakthroughs in plasma science and technology. Our program offers a diverse array of 16 core and co-sponsored oral sessions, complemented by a poster session that will report on the state-of-the art developments in both established and emerging fields of plasma research and application. Highlights include an overview of the grand challenges in the field of plasma etching and will be presented by last year’s Plasma Prize winner Richard Gottscho from LAM. In addition, recent key developments in the field of BEOL and FEOL plasma etching will be given by Jane Chang (UCLA) and Cathy Labelle (GlobalFoundries). The closely related field of damage free processing will be covered by a talk of MunPyo Hong of Korea University and new prospects on disruptive plasma technology will be presented by Keizo Kinoshita (Tohoku University, Japan) in his talk Plasma Process Developments for Spintronics Devices. The growth of research and interest in atmospheric plasma processing is reflected by the offering of three sessions on this important topic. Invited talks on microplasmas and their applications will be presented by Gary Eden (University of Illinois at Urbana Champaign) and Jeffrey Hopwood (Tufts University), while a session on their use in biological applications will be highlighted by EunHa Choi (Kwangwoon University, Republic of Korea) and Toshiro Kaneko (Tohoku University, Japan). Finally, the use of atmospheric plasmas used for roll to roll processing of materials including flexible substrates will be discussed in invited contributions discussed in talks by Kiyoshi Yasutake (Osaka University, Japan) and Geun Young Yeom (Sungkyunkwan University & SKKU Advanced Institute of Nano Technology (SAINT), Korea). The session on Plasma Deposition with start with an invited talk by Mariadriana Creatore (Eindhoven University of Technology, The Netherlands) with the intriguing title Looking Down the Rabbit Hole: Impact of Porosity in Plasma-deposited Inorganic Layers on Their Moisture Permeation Barrier Performance. This strong program is capped off by strong sessions covering the latest advances in new plasma sources and diagnostics. New developments in the design of 450 mm plasma processing tools will be addressed in the invited talk Study on Microwave ECR Plasma Source for 450-mm Wafer Etching given by Kenji Maeda (Hitachi, Ltd., Japan), The talk by Paola Diomede (University of Houston) Tailored Ion Energy Distributions on Plasma Electrodes in the Plasma Modeling session emphasizes the important role of controlling the ion energy distribution. Invited talks in two sessions on Plasma Diagnostics, Sensors and Control deal with Time resolved laser induced fluorescence on argon plasmas by Jose-Maria Palomares Linares (Eindhoven University of Technology, The Netherlands) and Mark Sobolewski (NIST) on Monitoring Plasma Etch Processes with Wave Cut-Off, Langmuir, and Radio-Frequency Probes. Plasma-surface interaction under extreme plasma conditions will be discussed by Gregory De Temmerman (FOM Institute DIFFER, Netherlands) in his talk entitled Surface Modifications Induced by Extreme Fluxes of LowEnergy Ions whereas Kenji Ishikawa (Nagoya University, Japan) will discuss the sensitive detection of free radicals on the surface in his talk Real time In Situ Electron Spin Resonance (ESR) Study of Free Radicals on Materials Created by Plasmas. CODE
SESSION
PS+EM-MoM
Atmospheric Plasma Processing and Micro Plasmas Gary Eden, U of Illinois at Urbana Champaign Jeffrey Hopwood, Tufts University
PS-MoM
Advanced FEOL/Gate Etching 1 Jane Chang, University of California, Los Angeles
PS+BI-MoA
Applications of (Multiphase) Atmospheric Plasmas (including Medicine and Biological Applications) EunHa Choi, Kwangwoon U., Republic of Korea Toshiro Kaneko, Tohoku University, Japan
PS2-MoA
Plasma Modeling Paola Diomede, University of Houston
PS1-TuM
Plasma Diagnostics, Sensors and Control 1 Mark Sobolewski, NIST
PS2-TuM
Advanced FEOL/Gate Etching 2 Richard Gottscho, Lam Research
PS1-TuA
Plasma Deposition and Plasma Enhanced ALD Mariadriana Creatore, Eindhoven University of Technology, The Netherlands
PS2-TuA
Plasma Surface Interaction during Plasma Etching Kenji Ishikawa, Nagoya University, Japan
PS+TC-WeM
Atmospheric Plasma Processing for PV, Flexible Electronics (incl. R2R) Kiyoshi Yasutake, Osaka University, Japan Geun Young Yeom, Sungkyunkwan University & SKKU Advanced Institute of Nano Technology (SAINT), Korea
PS-WeM
Advanced BEOL/Interconnect Etching Catherine Labelle, GLOBALFOUNDRIES
PS1-WeA
Plasma Diagnostics, Sensors and Control 2 JoseMaria Palomares Linares, Eindhoven Univ of Technology, the Netherlands
PS2-WeA
Plasma Surface Interactions during PECVD and Plasma Surface Modification Gregory De Temmerman, FOM Inst DIFFER, Netherlands
PS1-ThM
Plasma Processing for Disruptive Technologies (NVM, TSV, etc.) Keizo Kinoshita, Tohoku University, Japan
PS2-ThM
Low Damage Processing MunPyo Hong, Korea University
PS-ThA
Plasma Sources Kenji Maeda, Hitachi, Ltd., Japan
PS-ThP
Plasma and Technology Poster Session
SURFACE SCIENCE The Surface Science Division (SS) provides a forum for cuttingedge research that involves solid surfaces and interfaces. Phenomena that take place at the gas-solid and liquid-solid interfaces are prominent within the Division programs. Technical sessions address atomistic, electronic and chemical phenomena at surfaces and interfaces, their impact on materials properties, and their implication for technology and environmental processes. Surface Chemistry is an important divisional theme, encompassing the kinetics and dynamics of chemical events at surfaces, from adsorption and reaction to catalysis. Lively sessions devoted to a number of themes, including nonequillibrium processes , catalysis, and nanoscience. Surface science applications in high-impact areas - particularly energy science, nanotechnology, and environmental science - are prominent at the 2012 Symposium: The latest findings in reaction activation and mechanism of energetic processes are showcased in sessions devoted to surface photocatalysis, chemical reaction, catalysis and dynamics. The impact of nanoparticle shape,
45
size, and composition on reaction selectivity is explored in papers based upon direct experiment and computational surface science. Sessions are devoted to liquid/surface interaction, chirality and electronic features of molecular films, and synthesis and characterization of oxide materials. Several sessions describe experimental and theoretical studies of nanoparticles and nanostructures, including atomic scale imaging of nanowires, surface photochemistry of metal nanoparticles and structure and reactivity of nanocatalysts in operando conditions. The Surface Science Division is also co-sponsoring focused sessions on graphene growth, actinides, photocatalysis and solar fuels, in-situ microscopy, and spectroscopy of interfacial chemistry/catalysis, biomolecules at interfaces, 3D imaging and nanochemistry, and bio/nano interfaces. The Morton M. Traum Surface Science Student Award is presented for the best student paper submitted to any session sponsored or jointly sponsored by the Surface Science (SS) Division at the AVS International Symposia. The Tuesday Evening Poster Session features the presentations of the Mort Traum Student Award Finalists. The 2012 Winner will be announced in the Traum Student Award Ceremony, to be held Thursday at noon immediately following the Thursday morning session. CODE
SESSION
SS-MoM
Nonequillibrium and Nonlinear Processes Hermann Nienhaus, U of Duisburg-Essen, Germany John Tully, Yale University
SS-MoA
Surface Dynamics Gilbert Nathanson, University of WisconsinMadison
SS-TuM
Surface Reactivity of Oxides Zdenek Dohnalek, Pacific Northwest National Lab
SS+NS-TuA
Reactivity of Size and Shape Selected Nanoparticles Brian Hayden, University of Southampton, UK Dietrich Menzel, Fritz-Haber Institut, and Techn. Univ. Muenchen, Germany* Beatriz Roldan Cuenya, University of Central Florida
SS-TuP
Surface Science Poster Session
SS+OX-WeM
Synthesis and Characterization of Oxides Xiaoqing Pan, University of Michigan
SS-WeM
Chemisorption on Metallic Surfaces
SS+EM-WeA
Semiconductor Surfaces Yves Chabal, The University of Texas at Dallas* Paul Koenraad, Eindhoven U of Technology, Netherlands
SS-WeA
Catalysis on Metals and Alloys Simon Bare, UOP LLC, a Honeywell Company Donna Chen, University of South Carolina
SS+EN+OX-ThM Catalysis and Photocatalysis on Oxides Kazunari Domen, The University of Tokyo, Japan SS-ThM
Molecular Films: Chirality & Electronic Features Robert Hamers, Univ of Wisconsin-Madison Charles Sykes, Tufts University*
SS+NS-ThA
Surface Science of Nanostructures Anders Mikkelsen, Lund University, Sweden
SS-ThA
Liquid/Surface Interactions Bruce Kay, Pacific Northwest National Lab
*Gaede-Langmuir Award Winner *Medard W. Welch Award Winner *Peter Mark Memorial Award Winner
THIN FILM The 2012 Thin Film (TF) Division Program offers 13 core oral sessions, several co-sponsored sessions, and a poster session. A broad range of outstanding invited speakers will touch on topics across the gamut of thin film science and technology. TF will continue to highlight the core Atomic Layer Deposition (ALD) sessions focusing on Energy Applications, Reactions and Film Properties, ALD Enabled Applications, Hybrid Films, and Bioapplications. Other stimulating advances in thin films will be highlighted in sessions on Growth and Characterization, Modeling and Analysis of Thin Films, Nanostructuring Thin Films, Glancing Angle Deposition (GLAD), and Applications of Self Assembled Monolayers and Layer-by-Layer (LbL) Assemblies. Exciting new additions to the program include Thin Films for Encapsulation, Packaging, and Biomedical Devices, and Thin Films for Memory and Data Storage. TF will continue its rich involvement in energy applications with contributions to sessions on Energy Storage, Photovoltaics, Chalcogenide Solar Cells, and Solar Fuels in the Energy Frontiers Focus Topic. In addition, TF leads organizing a Focus Topic on Spectroscopic Ellipsometry. TF will also contribute co-sponsored sessions on Graphene, Electronic Materials, Plasma Deposition and Processing, Nanomanufacturing, Oxide Heterostructures, Rare Earth and Actinide Materials, 3D and Synchrotron Radiation Analysis of Thin Films. A Thin Films Poster Session held on Thursday evening will cover a diverse range of topics drawn from all the TFD sessions. TF is proud to host many distinguished invited speakers for these sessions. The ALD sessions feature Frank Greer of Jet Propulsion Laboratory/California Institute of Technology speaking on ALD for astronomy and space applications, Jeffrey Elam from Argonne National Laboratory speaking on ALD for the synthesis of nanostructured catalysts, and Simon Elliott of Tyndall National Institute presenting on growth simulations for ALD. Thin Film and Growth and Characterization sessions will feature Ayodhya Tiwari from EMPA, Switzerland, speaking on CdTe solar cells, Patrice Raynaud of University Paul Sabatier, France, discussing on gas and solid phase reactions during thin film growth, and the Paul Holloway award talk. A session on Modeling and Analysis of Thin Films will host both Peter Cummings from Vanderbilt University and Donald Brenner of North Carolina State University. Peter will discuss nanoconfined fluids in supercapacitors and Don will be discussing thermodynamics of film deposition on fuel rods. We expect another year of an exciting session on Glancing Angle Deposition (GLAD) featuring Fred Schubert from Rensselaer Polytechnic Institute, speaking on tunable-refractive-index materials. Nanostructuring Thin Films will highlight Kostya Ostrikov from CSIRO Materials Science and Engineering, Australia, who will be discussing plasma effects in nanostructuring thin films. Applications of Self Assembled Monolayers and Layer-by-Layer (LbL) Assemblies will feature Graham Leggett of University of Sheffield, presenting on light-directed nanosynthesis. New to this year is an exciting session on Thin Films for Encapsulation, Packaging, and Biomedical Devices that will feature Peter Carcia of DuPont Central Research and Development, who will be discussing Ultra-barrier Technology for Moisture-Sensitive Electronics. In addition, TF will highlight a new session on Thin Films for Memory and Data Storage that will host two invited speakers: Dr. Sylvain Maitrejean of CEA Leti, speaking on materials and processes for phase change memories, and Randall Victora from University of Minnesota who will speak on spin transport properties and applications in magnetic multilayers. This year’s TF program is keeping up with the rapidly changing field of thin films. Come join us at these sessions.
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CODE
SESSION
TF-MoM
ALD Enabled Applications Frank Greer, Jet Propulsion Laboratory/ California Institute of Technology
TF+EN-MoA
ALD for Energy Jeffrey Elam, Argonne National Lab
TF-TuM
ALD Reactions and Film Properties Simon Elliott, Tyndall National Inst, Ireland
TF+AS-TuA
Modeling and Analysis of Thin Films Donald Brenner, North Carolina State Univ Peter Cummings, Vanderbilt University
Kelley discusses the status and future prospects for niobium superconducting radio frequency accelerator cavities. The VTD poster session and Student Poster Competition Tuesday evening represent contributions across the spectrum of vacuum research topics. VTD will again host the “Ask the Experts” booth where experienced vacuum scientists, engineers and technicians will strive to answer perplexing vacuum technology issues. The booth is located in the exhibit area and staffed during exhibit hours. Bring your questions! CODE
SESSION
VT-MoM
Vacuum Gauging and Metrology Gregory Mulhollan, Saxet Surface Science
TF2-TuA
ALD for Hybrid Films and Bioapplications Jingwei Bai, IBM Res Div, T.J. Watson Res Ctr
VT-MoA
Gas Flow, Leaks, Permeation and Mass Analysis Timothy Short, SRI International
TF+SE+NS-WeM
Glancing Angle Deposition (GLAD) E. Fred Schubert, Rensselaer Polytechnic Inst
VT-TuM
Pumping, Gas Dynamics and Modeling Oleg Malyshev, STFC Daresbury Lab, UK
TF-WeM
Thin Films for Encapsulation, Packaging, and Biomedical Devices Peter Carcia, DuPont Central Res & Dev
VT-TuA
TF+AS-WeA
Thin Films: Growth and Characterization-I Ayodhya Tiwari, EMPA, Switzerland
Accelerator and Ultra-Clean Vacuum Systems Yusuke Suetsugu, High Energy Accelerator Res Org, Japan Henri Werij, TNO Technical Sciences, Netherlands
VT-TuP
TF+MI-WeA
Thin Films for Memory and Data Storage Sylvain Maitrejean, CEA Leti, France Randall Victora, University of Minnesota
Vacuum Technology Poster Session and Studentbuilt Vacuum System Poster Competition
VT+AS+SS-WeM Surface Analysis and Vacuum Manufacturing for Accelerators Michael Kelley, Jefferson Lab and College of William & Mary
TF+EM+SE+NS-ThM Nanostructuring Thin Films Kostya Ostrikov, CSIRO Materials Science and Engineering, Australia TF+NS+EM-ThM
Thin Films: Growth and Characterization-II Patrice Raynaud, CNRS and University Paul Sabatier Toulouse France
TF+AS+SS-ThA
Thin Films: Growth and Characterization-III Franklin Tao, University of Notre Dame
TF+EM+SS-ThA
Applications of Self-Assembled Monolayers and Layer-by-Layer Assemblies Graham Leggett, University of Sheffield, UK
TF-ThP
Thin Film Poster Session
FOCUS TOPICS ACTINIDES AND RARE EARTHS
VACUUM TECHNOLOGY The Vacuum Technology Division (VT) is pleased to present five oral sessions this year, as well as one poster session. The research presented in these sessions highlights the breadth of research into vacuum system modeling, design, construction, measurement, and species analysis, as well as surface science for accelerators. Our VT1 session on vacuum gauging and metrology highlights an invited talk by Gregory Mulhollan of Saxet Surface Science discussing the development of an XHV, non-ionizing vacuum gauge utilizing nano-materials. In addition to work characterizing calibrated leaks and gas flow, VT2 focuses on mass analysis, with an invited talk by Timothy Short of RTI International who extends typical mass spectrometry to oceanographic applications. VT3 emphasizes our core topic of pumping, gas dynamics and modeling, with Oleg Malyshev of STFC, Daresbury Laboratory discussing the applications of this field to particle accelerators. Accelerator and Ultra-Clean vacuum systems will be the focus of VT4, with Yusuke Suetsugu describing the state-of-the-art SuperKEKB Positron Ring vacuum systems, and Henrij Weirj discussing contamination control and Ultra-Clean systems. Our oral program concludes with VT5, with a focus on surface science applied to accelerator vacuum systems, where Michael
Actinides and Rare Earths exhibit many unique and diverse physical, chemical and magnetic properties, due in large part to the complexity of their 5f and 4f electronic structure. These Special Topic Sessions will focus upon the chemistry, physics and material science in the Lanthanide and Actinide materials, driven by the 4f and 5f electronic structure. Particular emphasis will be placed upon the 4f/5f magnetic structure, surface science and thin film properties and their applications to energy related issues. For the actinides, fundamental actinide science and its role in resolving technical challenges posed by actinide materials will be stressed, particularly with regard to energy applications, including energy generation, novel nuclear fuels and structural materials, waste remediation and waste disposal. Both basic and applied experimental approaches, including synchrotron- radiation-based and neutron-based investigations, as well as theoretical modeling computational simulations, are to be part of the Special Sessions. Of particular importance are the issues connected to potential renaissance in Nuclear Energy, including fuel synthesis, oxidation, corrosion, intermixing, stability in extreme environments, prediction of properties via bench-marked simulations, separation science, environmental impact and disposal of waste products. The shared sessions will be with MIND, Surface Science, Thin Films and Energy Frontiers CODE
SESSION
AC+MI+SS+ TF-MoM
Electronic Structure and Spectroscopy of Actinides Sergei Butorin, Uppsala University, Sweden Richard Martin, Los Alamos National Lab Per Söderlind, Lawrence Livermore National Lab
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AC+TF+SS+ MI-MoA
Actinides and Rare Earths: Thin Films and Surface Science John McClory, Air Force Institute of Technology Thomas Scott, University of Bristol, UK
AC+EN-TuM
Energetic Materials Issues for Nuclear Power: Fuels, Corrosion and Waste Disposal J. Rory Kennedy, Idaho National Laboratory Paul Roussel, AWE, UK
interfaces with Thomas Arnebrant (Malmö) and Rein Ulijn (WestChem), bio-nano interfaces with Vincent Rotello (UMass) and characterization with Buddy Ratner (UWEB) and Sebastian Maerkl (EPFL). CODE
SESSION
BN+AS-WeA
Bioimaging Alain Brunelle, CNRS, Institut de Chimie des Substances Naturelles (ICSN), France Ioan Notingher, University of Nottingham, UK
BIOFILMS AND BIOFOULING: MARINE MEDICAL ENERGY
ELECTRON TRANSPORT AT THE NANOSCALE
Biofilms on synthetic surfaces play critical roles in a variety of processes beyond marine biofouling. Adhesion and adsorption of biological components, both as organisms and their products, to marine equipment in ocean environments, termed “biofouling”, is a serious unsolved problem costing billions of dollars annually worldwide. Biofilms also play critical roles in the failure of medical devices, non-marine corrosion processes, sewage treatment, and renewable energy systems such as biofuel production. Finally, direct electrical generation and chemical production occurs via biofilms incorporated into bioelectrochemical cells. Sponsored by ONR, the Biofilms and Biofilm: Marine, Medical and Energy topical conference program, brings together biologists, chemists, physicists, material scientists and surface engineers to discuss new approaches that emphasize defining and controlling interfacial parameters that drive and inhibit colonization, adhesion and maturation of biofilms. We aim to create the opportunity for open discussion and debate on the Grand Challenges being faced by the international community as it attempts to control and understand biofilms as they relate to marine biofouling, medical problems, and energy applications. The day-long program Biofilms and Biofouling program is complemented by a range of Biomaterials Interfaces and energy topics spread across the week at the International Symposium, which commences Sunday afternoon with the Biomaterials Plenary on Imaging of Biointerfaces.
Electron transport at the nanoscale is the key to the novel applications of nanomaterials in electronic and energy technologies. Due to the restricted dimensionality, one distinctive character of nanomaterials is that the transport properties are critically dependent on the structural details. Therefore, an important requirement for transport research of a specific nanomaterial system is to examine its structures and properties in a coherent manner. The Electron Transport (ET) Focus Topic sessions provide a forum for the discussion of electron transport for materials and structures where electron transport at the nanoscale is of interest. A wide range of scanning probe microscopy (SPM) and mesoscopic transport spectroscopy techniques are making these studies possible. SPM, in particular, provides unparalleled access to the nanoscale world through structural imaging, functionality probing, and nanostructure manipulation. The sessions encompass both theory and experiment related to atomic structures, nanowires and junctions, molecules and quantum dots, defects and domain/grain boundaries, and surfaces and interfaces, and also novel methodologies and techniques. Materials studied will include metal, semiconductor, complex oxide, carbon based materials, molecules, and organic/inorganic hybrid materials. This focus topic is co-sponsored by the Nanometer-scale Science and Technology Division, the Electronic Materials and Processing Division, the Scanning Probe Microscopy Focus Topic, and the Graphene Focus Topic.
CODE
SESSION
CODE
SESSION
MB+BI-ThM
Biofilms and Biofouling in Medicine Ross Carlson, Montana State University Kirk Schanze, University of Florida
ET+NS+EM-ThM
Electron Transport at the Nanoscale: Nanowires and Junctions Lincoln Lauhon, Northwestern University
MB+BI-ThA
Marine Biofouling Brenda Little, Naval Research Laboratory John Regan, Penn State University
ET+SS+GR+SP-ThA Electron Transport at the Nanoscale: Molecules and Defects Hong-jun Gao, Chinese Academy of Sciences Sergei Kalinin, Oak Ridge National Laboratory ET-ThP
BIOINTERPHASES: BIOIMAGING The bioimaging theme, initiated in the BID Plenary, continues in the Biointerphases Focus Topic: Bioimaging (BN) which will be compiled into a Special Issue of the journal Biointerphases. The Focus Topic, Biofilms and Biofouling: Marine, Medical, Energy will bring together the wide range of communities to explore how bacterial biofilms and biofouling are controlled in marine applications, utilized in energy production and eliminated in medicine. Consistent with the vision of the BID, its technical program provides a forum that explores the current challenges at the interface of materials and biological systems in the following sessions with the highest quality invited speakers from around the world. The BID technical program incorporates topics dealing with cells and surfaces featuring invited presentations from Joachim Spatz (MPI), Matthias Lutolf (EPFL) and Carl Simon (NIST), biomolecules at
Electron Transport at the Nanoscale Poster Session
ET+SS+GR+SP-FrM Electron Transport at the Nanoscale: Development of Theories and Techniques Rolf Moeller, U of Duisburg-Essen, Germany Xiaoguang Zhang, Oak Ridge National Lab
ENERGY FRONTIERS The Energy Frontiers Focus Topic (EN) highlights the fundamental science underlying next generation energy capture, conversion, transport, and storage technologies. This focus topic is inherently interdisciplinary – cross-cutting through many of the AVS divisions and focus topics. This year, 9 core sessions will address recent advances in the understanding of photovoltaic, photocatalytic, electrochemical, and thermophysical materials and interfaces. EN is also
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co-sponsoring 12 additional sessions with nearly all the divisions (Applied Surface science, Biomaterial Interfaces, Thin Films, Plasma Science and Technology, Surface Science, Nanometer-scale Science and Technology, Magnetic Interfaces) and 5 focus topics (Actinides, Transparent Conductors and Printable Electronics, Electron Transport at the Nanoscale, Oxide Heterostructures-Interface Form and Function and Spectroscopic Ellipsometry). Multiple sessions will highlight both traditional and emerging photovoltaics. Two sessions are devoted to chalcogenide materials (e.g. CIGS, CZTS, etc.) and devices. Invited talks by a number of leaders in the field, including Chris Ferekides, William Shafarman, Susanne Siebentritt, Timothy Gessert, Hugh Hillhouse, and Hans-Werner Shock, are the cornerstone of these sessions. Harry Atwater will discuss “Photonic Materials for Solar Energy Conversion at the Thermodynamic Limit” at the outset of the Thin Film, Heterostructured, and Organic Solar Cells session. Vijit Sabnis, a co-founder of Solar Junction, will continue this session with “High Efficiency Multijunction Solar Cells Employing Dilute Nitrides.” A diverse session on Nanostructured Solar Cells will be headlined by Joseph Luther’s talk entitled “Quantum Dot Solar Cells with External Quantum Efficiencies Exceeding 100% by Multiple Exciton Generation” and Tim Lian’s presentation on “Single and Multiple Exciton Dissociation in Colloidal Nanoheterostructures.” Electrochemical materials and devices are also prominently featured this year. Nancy Dudney will describe her recent work on “Batteries and Battery Materials by Vapor Deposition” at the outset of the Thin Films for Energy Applications session. Andrew Herring and Gleb Yushin will both be featured during the Batteries and Fuel Cells session. The EN focus topic is rounded out with a final session covering recent advances in Photocatalysis and Solar Fuels. CODE
SESSION
EN+NS-MoM
Nanostructured Solar Cells Tianquan Lian, Emory University Joseph Luther, Natl Renewable Energy Lab
EN+TF-MoA
Chalcogenide Solar Cells I Timothy Gessert, Natl Renewable Energy Lab Hugh Hillhouse, University of Washington Matthew Law, Univ of California, Irvine
EN+TF-TuM
Chalcogenide Solar Cells II Chris Ferekides, University of South Florida William Shafarman, University of Delaware Susanne Siebentritt, Univ of Luxembourg
EN+TF-TuA
Thin Film, Heterostructured, and Organic Solar Cells Michael Arnold, Univ of Wisconsin Madison Harry Atwater, California Institute of Tech Vijit Sabnis, Solar Junction
EN+PS-WeM
Plasmas for Photovoltaics and Energy Applications Erik Johnson, LPICM-CNRS, Ecole Polytech, France Tomohiro Nozaki, Tokyo Ins of Tech, Japan
EN+TF-WeA
Thin Films for Energy Applications Nancy Dudney, Oak Ridge National Lab
EN+NS-ThM
Batteries and Fuel Cells Andrew Herring, Colorado School of Mines Gleb Yushin, Georgia Institute of Technology
EN+AS-ThA
Characterization of Energy Materials and Systems David Albin, Natl Renewable Energy Lab
EN+NS-ThA
Thermophotovoltaics, Thermoelectrics & Plasmonics Yue Wu, Purdue University
EN-ThP
Energy Frontiers Poster Session
EN+SS-FrM
Photocatalysis and Solar Fuels
GRAPHENE AND RELATED MATERIALS Graphene and other two-dimensional (2D) materials have recently attracted an enormous attention due to their unique physical and chemical properties, which open up exciting avenues for both fundamental research and novel applications. This AVS focus topic is an interdisciplinary forum, which will review the world-wide effort in exploring the fundamental properties of graphene and other 2D materials, their synthesis, characterization, processing and applications. This year’s program consists of 9 Focus Topic sessions cosponsored by 9 AVS divisions, which will highlight recent major breakthroughs, progress, and challenges in rapidly developing the science and technology of graphene and other 2D materials. Our program will start on Monday morning with the session on graphene growth, which include invited talks by Thomas Michely on epitaxial graphene on Ir(111) surface and by Rudolf Tromp on growth studies by various surface science techniques. Monday afternoon’s session on graphene’s electronic properties and charge transport will include invited talks by Kiril Bolotin “Tuning electronic properties of graphene by controlling its environment” and by Eli Rotenberg “Growth and interactions in epitaxial graphene layers”. Our session on graphene’s optical, magnetic, mechanical, and thermal properties on Tuesday morning will feature invited talks “Spin-transport and magnetism in graphene” by Roland Kawakami, “Probing few-layer graphene by optical spectroscopy” by Tony Heinz , and “Graphene mechanics and NEMS applications” by James Hone. Graphene characterization session on Tuesday afternoon will feature invited talk by Phillip First on Scanning tunneling spectroscopy of epitaxial graphene. On Wednesday morning, the session on graphene’s surface chemistry, functionalization, biological and sensor applications will include invited talks by Mark Hersam on molecularly-resolved chemical functionalization of graphene and by Andrey Turchanin on molecular route to carbon nanomembranes, graphene and their hybrids. The Wednesday afternoon session on dopants, defects, and interfaces in graphene will feature an invited talk by Mauricio Terrones “The role of defects and doping in graphene-like materials and beyond”. Graphene nanostructures will be discussed at the session on Thursday morning, which will include invited talks by Alex Zettl “Growth of a Linear Topological Defect in Graphene as a Gate-tunable Valley Valve” and by Debdeep Jena “Electronic Properties and Device Applications of Wafer-Scale Graphene Nanoribbons”. On Thursday afternoon, new developments in investigation of two-dimensional materials beyond graphene will be highlighted in the series of the invited talks by Jun Lou “Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers”, by Boris Yakobson “Probing the BCN-triangle by Computations—Outside the Carbon Corner”, and by Andras Kis “Single-layer MoS2 Devices and Circuits”. Graphene and related materials poster session will take place on Thursday afternoon as well. The full week graphene focus topic program will conclude with the session on graphene device physics and applications, which include invited talk by Xiangfeng Duan “Heterointegration of Graphene with Nano and Molecular Scale Structures for High Performance Devices”, by Xiangfeng Duan “Graphene RF: From Fundamentals to Opportunities”, and by Virginia Wheeler “Graphene and Dielectric Integration: A Sticky Situation?” CODE
SESSION
GR+EM+NS+PS Graphene Growth SS+TF-MoM Thomas Michely, Universität zu Köln, Germany Rudolf Tromp, IBM T.J. Watson Research Center GR+EM+ET+ NS+TF-MoA
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Electronic Properties and Charge Transport Kirill Bolotin, Vanderbilt University Eli Rotenberg, Lawrence Berkeley National Lab
GR+AS+EM+MI +MN-TuM
Optical, Magnetic, Mechanical & Thermal Properties Tony Heinz, Columbia University James C. Hone, Columbia University Roland Kawakami, Univ of California, Riverside
GR+AS+NS+SP +SS-TuA
Graphene Characterization Including Microscopy and Spectroscopy Phillip First, Georgia Tech
GR+AS+BI+PS +SS-WeM
Graphene Surface Chemistry, Functionalization, Biological and Sensor Applications Mark Hersam, Northwestern University Andrey Turchanin, Univ of Bielefeld, Germany
GR+AS+EM+NS Dopants and Defects in Graphene; Graphene Inter +SS-WeA faces with Other Materials Mauricio Terrones, Pennsylvania State University, Shinshu University, Japan GR+AS+NS +SS-ThM
Graphene Nanostructures Debdeep Jena, University of Notre Dame Alex Zettl, Univ of California, Berkeley, LBL
GR+EM+NS+ SS+TF-ThA
Beyond Graphene: BN and Other 2D Electronic Materials; 2D Heterostructures Andras Kis, EPFL, Switzerland Jun Lou, Rice University Boris Yakobson, Rice University
GR-ThP
Graphene and Related Materials Poster Session
GR+EM+ET+ MS+NS-FrM
Graphene Device Physics and Applications Xiangfeng Duan, Univ of California, Los Angeles Jeong-Sun Moon, HRL Laboratories LLC Virginia Wheeler, U.S. Naval Research Lab
HELIUM ION MICROSCOPY The Focus Topic on Helium Ion Microscopy (HI) provides a forum for scientists working with Helium Ion Microscopes and those interested in its prospects and capabilities. In general, the focused topic covers aspects of science currently being explored with the HIM, ranging from image formation and contrast mechanisms to materials imaging, bioimaging and lithography. The Focus Topic starts with keynote presentations on “Basics of Imaging with Ions” by David Joy (University of Tennessee) and “Surface Analysis using Chanelling Contrast in NUHV Helium Ion Microscopy” by Bene Poelsema (Twente University). In session “HI1: Basics of Helium Ion Microscopy”, experimental aspects such as gas field ion sources and ion-materials interactions for imaging and nanomodification are covered. In session “HI2: Imaging and Lithography with the Helium Ion Microscope” invited talks by Stuart Boden (University of Southampton) on “HIM of Photonic Structures in Biological Systems” and Hongzhou Zhang (Trinity College) on “Dopant Contrast in HIM” introduce the field. In contributed talks a particular focus is laid on HIM investigations of two-dimensional nanomaterials, such as carbon nanomembranes (CNMs) and Graphene. The poster session “HI3: Aspects of Helium Ion Microscopy” covers a wide range of imaging and lithography aspects: carbon nanomembranes, irradiation damage, and ion beam induced deposition.
CODE
SESSION
HI+AS+NS-WeA
Basics of Helium Ion Microscopy David Joy, University of Tennessee Bene Poelsema, U of Twente, Netherlands
HI+AS+BI+NS-ThM
Imaging and Lithography with the Helium Ion Microscope Stuart Boden, Univ of Southampton, UK Hongzhou Zhang, Trinity College, Ireland
HI-ThP
Aspects of Helium Ion Microscopy Poster Session
IN SITU MICROSCOPY & SPECTROSCOPY Characterization of functional materials such as catalysts, films, nanomaterials, biomaterials, living tissues, and devices is critical in understanding and tailoring material properties, and controlling the behavior during growth, assembly or catalytic reaction. With the recent development of new experimental techniques and instrumentation, it is now possible to synthesize, characterize, and measure properties of active materials, in situ, during advanced spectroscopic, microscopic and imaging analysis. Focused symposium on In Situ Microscopy and Spectroscopy presents development and capabilities of in-situ characterization and diagnostic tools. In Situ Spectroscopic Studies of Catalysis and Gas-Solid Reactions session covers application of ambient pressure XPS for alternative energy research, catalysis, electrocatalysis and environmental science, use of multiple auxiliary in-situ techniques for following reactions and newly developed methods such as study of catalysis using in situ laser induced fluorescence. Recent developments of in-situ mass spectrometric methods for real-time disease diagnostics as well as novel techniques such as plasma pencil atmospheric mass spectrometry will be covered in In-situ Studies of Organic and Soft materials session. Other covered areas in this FT include: In situ microscopy at sub-micometer scale with chemical information and of 2D materials such as graphenes; Use of in-situ X-ray synchrotron radiation for study of thin film growth for both polymers and oxides; In-situ imaging and visualization of nucleation, growth, self-cleaning and transport in advanced functional nanomaterials. CODE
SESSION
IS+AS+SS+EN-TuM
In Situ Spectroscopic Studies of Catalysis and Gas-Solid Reactions Hendrik Bluhm, Lawrence Berkeley Natl Lab Ayman Karim, Pacific Northwest Nat Lab
IS+AS+BI+ET+ GR+NS-TuA
In Situ Studies of Organic and Soft Materials and In Situ Microscopy Peter Sutter, Brookhaven National Lab Zoltan Takats, Imperial College, UK
IS-TuP
In Situ Microscopy and Spectroscopy Poster Session
IS+AS+OX+ET-WeM In Situ Characterization of Solids: Film Growth, Defects, and Interfaces Jeffrey Eastman, Argonne National Lab
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NANOMANUFACTURING SCIENCE AND TECHNOLOGY
SCANNING PROBE MICROSCOPY
The Nanomanufacturing Science and Technology Focus Topic program highlights the AVS's strength in bringing together basic science and applied technology to support cutting edge industry. Perspectives of the challenges facing nanomanufacturing are presented in Tuesday morning's all-invited session featuring extended discussion time after each presentation. The critical issues related to environmental and toxicity issues related to nanomanufacturing are highlighted in two excellent invited presentations in our Monday morning session. ALD and other scalable processes for nanomanufacturing are presented in the Monday afternoon session. Look for Nanomanufacturing Focus Topic co-sponsored sessions scheduled throughout the rest of the week. CODE
SESSION
NM+AS+ MS-MoM
Metrology & Environmental Issues in Nanomanufacturing Henry Everitt, U.S. Army Aviation and Missile Research Development and Engineering Center Vicki Grassian, University of Iowa James Liddle, NIST Sherine Obare, Western Michigan University
NM+NS+MS+ EM-MoA
ALD and Scalable Processes for Nanomanufacturing Maitreyee Mahajani, Applied Materials Inc. James Watkins, University of Massachusetts
NM+MS-TuM
All Invited Session: Challenges of Nanomanufacturing from an Industrial Perspective Michael Hunter, Liquidia Technologies, INC. David Lazovsky, Intermolecular, Inc. Akihisa Sekiguchi, Tokyo Electron Limited
NM-TuP
Topics in Nanomanufacturing Poster Session
OXIDE HETEROSTRUCTURES-INTERFACE FORM & FUNCTION Oxides can display the full range of physical and chemical phenomena seen in the solid state including ferromagnetism, ferroelectricity, superconductivity, and catalytic activity. As wide-ranging as these phenomena are, entirely new behavior and phenomena can emerge at oxide interfaces to other oxides and materials. This Focus Topic brings together world leaders on all aspects of these phenomena including characterization of the interfaces and structures at the nanoscale, growth and properties of epitaxial oxide interfaces, new phenomena that emerge at oxide interfaces, multiferroic interfaces, interfaces to active organic layers, and oxide surface and interfacial chemistry. CODE
SESSION
OX+EM+MI+ NS+TF-MoM
Structure–Property Relationships in Epitaxial Oxide Interfaces Yasuyuki Hikita, SLAC National Accelerator Lab Sohrab Ismail-Beigi, Yale University Lena Kourkoutis, Cornell University
OX+SS+TF+ MI-MoA
Chemistry of Oxide Surfaces and Interfaces Zheng-Hong Lu, University of Toronto, Canada Peter Stair, Northwestern U & Argonne Natl Lab
OX-TuP
Oxide Interfaces & Heterostructures Poster Session
The scanning probe microscopy (SPM) field has provided a family of techniques that have revolutionized our understanding of nanoscale interfacial phenomena. Now comprised of more than 20 different types of microscopy, the field has provided advanced tools that are able to image, manipulate and interrogate the functionality of surface features to the level of individual molecules and atoms. Such tools underpin the research activities encompassed by many AVS divisions. This focus topic will provide a forum for the discussion of the latest advances made in the SPM field. Areas of particular interest include approaches to improve imaging capability (e.g. resolution, image acquisition time, ability to obtain images in extreme environments, and in quantitative property/functionality data acquisition), and in the acquisition of probe-sample interaction data (including nano-manipulation and nanofabrication). Novel and emerging instrument formats, including those that combine SPM with complementary analytical methods (e.g. vibrational spectroscopy or fluorescence micrsoscopy) are also of considerable interest. These interests are reflected through invited and contributed presentations in 3 key areas, namely: Advances in Scanning Probe Imaging (Invited talks by Jamie Hobbs (Sheffield) and Leo Gross (IBM)), Probe-Sample Interactions, Nano-manipulation and Fabrication (Invited talks by Robert Wolkow (Alberta) and Hermann Gaub (Munich)) and Emerging Instrument Formats (Invited talks by Steven Jesse (Oak Ridge National Laboratory) and Craig Prater (Anasys Instruments). Importantly, this focus topic will also precede the Electron Transport Focus Topic, in which scanning probe methods strongly feature. CODE
SESSION
SP+AS+BI+ET+ MI+NS-TuA
Advances in Scanning Probe Imaging Leo Gross, IBM Research - Zurich, Switzerland Jamie Hobbs, University of Sheffield, UK
SP+AS+BI+ET+MI+ Probe-Sample Interactions, NanoNM+NS+SS+TF-WeM Manipulation and Fabrication Hermann Gaub, Ludwig-Maximilians U., Germany Robert Wolkow, University of Alberta and National Institute for Nanotechnology, Canada SP+AS+BI+ET+ MI+TF-WeA
Emerging Instrument Formats Stephen Jesse, Oak Ridge National Lab Craig Prater, Anasys Instruments
SPECTROSCOPIC ELLIPSOMETRY Following the very successful participation to the Spectroscopic Ellipsometry Focus Topic in 2009-2011, the AVS International Symposium hosts the Spectroscopic Ellipsometry Focus Topic (EL) also in 2012, by providing a fertile terrain of discussion for all scientists and engineers willing to present their most recent progress in the field of science, technology and applications of spectroscopic ellipsometry. In particular, given the extensive, yet complementary interest of the AVS community in material science and characterization, in the physics and chemistry principles at the basis of surface modification and (thin) film growth, and in novel applications, the EL Focus Topic will host two oral sessions entitled “ Spectroscopic Ellipsometry for Photovoltaics and Semiconductor Manufacturing” and “Spectroscopic Ellipsometry: from Organic and Biological Systems to Inorganic Thin Films.”
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The EL Focus Topic proudly hosts three distinguished invited speakers within these sessions. Robert Collins (University of Toledo) will present his research in the field of Multichannel Spectroscopic Ellipsometry applied to I-III-VI2 Thin Film Photovoltaics. Carlos Garcia (The University of Texas at San Antonio) will discuss his latest work intriguingly anticipated by the title “The Story of Most Proteins and Most Surfaces as Told by Spectroscopic Ellipsometry”. Finally, Clifford Henderson (Georgia Institute of Technology) will present his ellipsometric studies in the field of “Detailed Photoresist and Photoresist Processing Studies using Spectroscopic Ellipsometry.” CODE
SESSION
EL+TF+AS+EM+SS+ Spectroscopic Ellipsometry for Photo PS+EN+NM-MoM voltaics and Semiconductor Manufacturing Robert Collins, University of Toledo EL+TF+BI+AS+ EM+SS-MoA
Spectroscopic Ellipsometry: From Organic and Biological Systems to Inorganic Thin Films Carlos Garcia, Univ of Texas at San Antonio Clifford Henderson, Georgia Inst of Tech
EL+TF+AS+EM+ SS-TuP
Spectroscopic Ellipsometry Poster Session
TRANSPARENT CONDUCTORS AND PRINTABLE ELECTRONICS Electronic materials and devices are rapidly moving toward greater versatility, e.g., via printability and/or flexibility over large areas while also exhibiting optical transparency. This focus topic addresses research on a range of transparent and printable electronics, from conductors to complete transistors and will consist of two sessions: a session on Printable and Flexible Electronics (Wednesday afternoon) and a session on Transparent Conductors and Devices (Thursday morning). Presentations address synthesis, growth, fabrication, theory, characterization, and processing of transparent and printable electronics, based on both novel and more established materials. The first session will begin with presentations on metal oxides and organic materials for printable electronics and will follow with presentations on alternative materials for flexible, transparent and printable electronics and photovoltaics. The second session will include presentations on processing and characterization of oxide-based thin-film transistors (TFTs), which will be complemented by presentations on theory and characterization of various transparent conducting oxide materials and interfaces. A poster session will also be held (Thursday evening) to complement the oral sessions; posters will address oxide-based TFTs, as well as materials for transparent conductors and flexible electronics. CODE
SESSION
TC+EM+AS-WeA
Printable and Flexible Electronics Antonio Facchetti, Polyera Corp. & Northwestern U. Mohammad Islam, Carnegie Mellon Univ Maikel van Hest, Natl Renewable Energy Lab
TC+EM+AS+TF+ EN-ThM
Transparent Conductors and Devices Hideo Hosono, Tokyo Inst of Tech, Japan Henning Sirringhaus, Univ of Cambridge, UK
TC-ThP
Transparent Conductors and Printable Electronics Poster Session
TRIBOLOGY The 2012 Tribology Focus Topic (TR) offers 3 core oral sessions, which include sessions jointly sponsored by the Advanced Surface Engineering (SE) Division and the Biomaterial Interfaces (BI) Division, as well as a poster session. This program spans topics that touch on the molecular origins of friction, materials in low friction materials and coatings, friction in biological materials, self healing coatings, and bio-inspired design. The organizers are especially proud of the many distinguished talks that will be presented in each topical session. Our focused topic begins Tuesday morning with a session titled Self Healing Coatings, Bio-Inspired Design, and Frictional Properties of Biological Materials. This session includes invited talks by Scott Perry from the University of Florida who will present his work on friction between hydrogel lens contacts. Sybrand van der Zwaag from Delft University of Technology and University of Twente will provide a perspective on how self healing phenomena can be used to address challenges found in materials used in harsh environments. Finally, Seong Kim from Penn State University will present his work on how self healing of a surface can be obtained through a bound plus mobile lubricant. In our session titled Molecular Origins of Friction and Wear on Tuesday afternoon, Mark Robbins of Johns Hopkins University will present an invited talk on how area, stiffness, friction and adhesion of contacts play an important part in understanding the interaction between rough contacts. Our final session on Wednesday morning, titled Tribology and Wear of Low-Friction Coatings and Materials, includes an invited talk by Chris Muratore from the Air Force Research Laboratory. Chris will be speaking on in situ monitoring and characterization of environmentally adaptive composites. In addition to the opportunity to see international leaders present contributed and invited talks on cutting-edge issues pertinent to tribology, our poster session on Tuesday evening provides yet another opportunity to network and interact with leading researchers in friction and wear. CODE
SESSION
TR+BI-TuM
Self Healing Coatings, Bio-Inspired Design, and Frictional Properties of Biological Materials Seong Kim, Pennsylvania State University Scott Perry, University of Florida Sybrand van der Zwaag, Delft Univ of Tech and University of Twente, the Netherlands
TR-TuA
Molecular Origins of Friction and Wear Mark Robbins, Johns Hopkins University
TR-TuP
Tribology Poster Session Thomas
TR+SE-WeM
Tribology and Wear of Low-Friction Coatings and Materials Christopher Muratore, Air Force Research Lab
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SESSION OVERVIEW Wed. AM Room 9 Wed. PM Room 9
Symposium Plenary Lecture Mon. 12 Noon Ballrm B The BP Oil Spill in the Gulf of Mexico: Are Microbes Helping to Clean up the Mess? Joel E. Kostka, Georgia Institute of Tech
Thu. AM Thu. AM
Advanced Surface Engineering Mon. AM Room 22
Thu. PM
Mon. PM
Thu. PM
Tue. AM Tue. PM Tue. PM
Nanostructured Thin Films and Coatings I: Interface Aspects Room 22 Nanostructured Thin Films and Coatings II: Multifunctional Properties Room 22 Pulsed Plasmas in Surface Engineering Room 22 Atmospheric Pressure Plasmas Central Hall Advanced Surface Engineering Poster Session
Thu. PM Fri.
AM
Hybrid Electronic Materials and Interfaces Oxides and Dielectrics for Novel Devices and Ultra-dense Memory Room 14 Nanoelectronic Interfaces, Materials, and Devices Room 9 Processing for Ultra Low Power Electronics + Semiconductor Heterostructures I Room 9 Semiconductor Heterostructures II + Heusler Alloys Room 14 Growth and Characterization of Group IIINitride Materials Central Hall Electronic Materials and Processing Poster Session Room 14 Low-Resistance Contacts to Nanoelectronics
Applied Surface Science
Magnetic Interfaces and Nanostructures
Mon. AM Room 20
Tue. PM Room 6 Wed. AM Room 6 Wed. PM Room 6
Quantitative Surface Chemical Analysis, Technique Development, and Data Interpretation - Part 1 Mon. PM Room 20 Quantitative Surface Chemical Analysis, Technique Development, and Data Interpretation - Part 2 Tue. AM Room 20 Practical Surface Analysis Tue. PM Room 20 Surface Analysis of Materials Using Vibrational Techniques (2:00-3:20 pm)/ Multi-Technique Analysis (4:00-6:00 pm) Tue. PM Central Hall Applied Surface Science Poster Session Wed. AM Room 20 Surface Analysis of Biological Materials Using Vibrational & Non Linear Optical Spectroscopy Techniques (8:00-10:00 am) / 3D Imaging & Nanochemical Analysis Part 1 (10:40 am-12:00 pm) Wed. PM Room 20 3D Imaging & Nanochemical Analysis Part 2 (2:00-3:20 pm)/Advanced Data Analysis & Instrument Control (4:00-6:00 pm) Thu. AM Room 20 Applications of Large Cluster Ion Beams Thu. PM Room 20 Applications of Large Cluster Ion Beams Part 2 (2:00-3:20 pm)/ Surface Analysis using Synchrotron Techniques (3:40-5:40 pm) Fri. AM Room 20 Surface Analysis using Synchrotron Techniques
Biomaterial Interfaces Sun. PM Room 23 Mon. AM Mon. PM Tue. Tue. Tue. Wed.
AM PM PM AM
Biomaterials Plenary - Bioimaging: In Vacuo, In Vitro, In Vivo Room 23 Surfaces to Control Cell Response Room 23 Cell-Surface Interactions: High Throughput Methodologies Room 23 Biomolecules at Interfaces Room 23 Characterization of Biointerfaces Central Hall Biomaterial Interfaces Poster Session Room 23 Bio/Nano Interfaces with Applications in Biomedicine and Energy
Electronic Materials and Processing Mon. Mon. Tue. Tue.
AM PM AM PM
Room 9 Room 9 Room 9 Room 9
High-k Dielectrics for MOSFETs I High-k Dielectrics for MOSFETS II Electrical Testing and Defects in III-V’s Materials and Processes for Advanced Interconnects
Fundamental Problems in Magnetism Topological Insulators and Rashba Spintronics, Magnetoelectrics, Multiferroics Thu. AM Room 6 Emerging Probes in Magnetic Imaging, Reflectometry and Characterization Thu. PM Central Hall Magnetic Interfaces and Nanostructures Poster Session
Manufacturing Science and Technology Mon. AM Room 16
Metrology and Environmental Issues in Nanomanufacturing Mon. PM Room 16 ALD and Scalable Processes for Nanomanufacturing Tue. AM Room 16 All Invited Session: Challenges of Nanomanufacturing from an Industrial Perspective Tue. PM Central Hall Topics in Nanomanufacturing Poster Session
MEMS and NEMS Mon. AM Room 10
Characterization of Surfaces and Interfaces in MEMS and NEMS Mon. PM Room 10 Multi-scale Interactions of Materials and Fabrication at the Micro- and Nano-scale Tue. AM Room 10 Optomechanics and Photonic MEMS and NEMS Tue. PM Central Hall MEMS and NEMS Poster Session
Nanometer-Scale Science and Technology Mon. AM Room 12 Mon. PM Room 12 Tue. AM Room 12 Tue. PM Wed. AM Wed. PM Thu. AM Thu. PM
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Nanoparticles and Quantum Structures Nanopatterning and Nanolithography One-Dimensional Nanowires and Nanotubes Room 12 Nanomaterials in Two and Three Dimensions Room 12 Nanoscale Catalysis and Surface Chemistry Room 12 Nanophotonics and Plasmonics Room 12 Nanoscale Imaging and Microscopy Central Hall Nanometer-scale Science and Technology Poster Session
SESSION OVERVIEW Plasma Science and Technology Mon. AM Room 24 Mon. AM Mon. PM Mon. Tue. Tue. Tue.
PM AM AM PM
Tue. PM Wed. AM Wed. AM Wed. PM Wed. PM Thu. AM Thu. AM Thu. PM Thu. PM
Atmospheric Plasma Processing and Micro Plasmas Room 25 Advanced FEOL/Gate Etching 1 Room 24 Applications of (Multiphase) Atmospheric Plasmas (including Medicine and Biological Applications) Room 25 Plasma Modeling Room 24 Plasma Diagnostics, Sensors and Control I Room 25 Advanced FEOL/Gate Etching 2 Room 24 Plasma Deposition and Plasma Enhanced ALD Room 25 Plasma Surface Interaction during Plasma Etching Room 24 Atmospheric Plasma Processing for PV, Flexible Electronics (incl. R2R) Room 25 Advanced BEOL/Interconnect Etching Room 24 Plasma Diagnostics, Sensors and Control 2 Room 25 Plasma Surface Interactions during PECVD and Plasma Surface Modification Room 24 Plasma Processing for Disruptive Technologies (NVM, TSV, etc.) Room 25 Low Damage Processing Room 25 Plasma Sources Central Hall Plasma Science and Technology Poster Session
Surface Science Mon. Mon. Tue. Tue.
AM PM AM PM
Room 21 Room 21 Room 21 Room 21
Nonequillibrium and Nonlinear Processes Surface Dynamics Surface Reactivity of Oxides Reactivity of Size and Shape Selected Nanoparticles Tue. PM Central Hall Surface Science Poster Session Wed. AM Room 22 Synthesis and Characterization of Oxides Wed. AM Room 21 Chemisorption on Metallic Surfaces Wed. PM Room 22 Semiconductor Surfaces Wed. PM Room 21 Catalysis on Metals and Alloys Thu. AM Room 21 Catalysis and Photocatalysis on Oxides Thu. AM Room 22 Molecular Films: Chirality & Electronic Features Thu. PM Room 21 Surface Science of Nanostructures Thu. PM Room 22 Liquid/Surface Interactions
Thin Film Mon. Mon. Tue. Tue. Tue.
AM PM AM PM PM
Room 11 Room 11 Room 11 Room 10 Room 11
Wed. AM Room 11 Wed. AM Room 10 Wed. PM Room 11 Wed. PM Room 10 Thu. AM Room 10
Thu. AM Room 11 Thu. PM Room 11 Thu. PM Room 10
Thin Films: Growth and Characterization-II Thin Films: Growth and Characterization-III Applications of Self-Assembled Monolayers and Layer-by-Layer Assemblies Thu. PM Central Hall Thin Film Poster Session
Vacuum Technology Mon. AM Room 14 Mon. PM Room 14 Tue. AM Tue. PM Tue. PM Wed. AM
Vacuum Gauging and Metrology Gas Flow, Leaks, Permeation and Mass Analysis Room 14 Pumping, Gas Dynamics and Modeling Room 14 Accelerator and Ultra-Clean Vacuum Systems Central Hall Vacuum Technology Poster Session and Student-built Vacuum System Poster Competition Room 14 Surface Analysis and Vacuum Manufacturing for Accelerators
Exhibitors and Manufacturers Technology Spotlight Tue. Tue. Tue. Wed. Wed. Wed. Thu.
AM PM PM AM PM PM PM
West Exhibit Hall West Exhibit Hall West Exhibit Hall West Exhibit Hall West Exhibit Hall West Exhibit Hall West Exhibit Hall
10:00–10:40 AM 12:00–2:00 PM 3:20–4:00 PM 10:20–10:40 AM 12:20–2:00 PM 3:20–4:00 PM 12:00–1:00 PM
Actinides and Rare Earths Focus Topic Mon. AM Room 6 Mon. PM Room 6 Tue. AM Room 6
Electronic Structure and Spectroscopy of Actinides Actinides and Rare Earths: Thin Films and Surface Science Energetic Materials Issues for Nuclear Power: Fuels, Corrosion and Waste Disposal
Biofilms and Biofouling: Marine Medical Energy Focus Topic Thu. AM Room 23 Thu. PM Room 23
Biofilms and Biofouling in Medicine Marine Biofouling
Biointerphases: Bioimaging Focus Topic ALD Enabled Applications ALD for Energy ALD Reactions and Film Properties Modeling and Analysis of Thin Films ALD for Hybrid Films and Bioapplications Glancing Angle Deposition (GLAD) Thin Films for Encapsulation, Packaging, and Biomedical Devices Thin Films: Growth and Characterization-I Thin Films for Memory and Data Storage Nanostructuring Thin Films
Wed. PM Room 23
Bioimaging
Electron Transport at the Nanoscale Focus Topic Thu. AM Room 16
Electron Transport at the Nanoscale: Nanowires and Junctions Thu. PM Room 16 Electron Transport at the Nanoscale: Molecules and Defects Thu. PM Central Hall Electron Transport at the Nanoscale Poster Session Fri. AM Room 16 Electron Transport at the Nanoscale: Development of Theories & Techniques
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SESSION OVERVIEW Energy Frontiers Focus Topic
Nanomanufacturing Science and Technology Focus Topic
Mon. Mon. Tue. Tue.
Mon. AM Room 16
AM PM AM PM
Wed. AM Wed. PM Thu. AM Thu. PM Thu. PM Thu. PM Fri. AM
Room 15 Room 15 Room 15 Room 15
Nanostructured Solar Cells Chalcogenide Solar Cells I Chalcogenide Solar Cells II Thin Film, Heterostructured, and Organic Solar Cells Room 15 Plasmas for Photovoltaics and Energy Applications Room 15 Thin Films for Energy Applications Room 15 Batteries and Fuel Cells Room 15 Characterization of Energy Materials and Systems Room 7 Thermophotovoltaics, Thermoelectrics and Plasmonics Central Hall Energy Frontiers Poster Session Room 15 Photocatalysis and Solar Fuels
Metrology and Environmental Issues in Nanomanufacturing Mon. PM Room 16 ALD and Scalable Processes for Nanomanufacturing Tue. AM Room 16 All Invited Session: Challenges of Nanomanufacturing from an Industrial Perspective Tue. PM Central Hall Topics in Nanomanufacturing Poster Session
Oxide Heterostructures-Interface Form & Function Focus Topic Mon. AM Room 7
Graphene and Related Materials Focus Topic Mon. AM Room 13 Mon. PM Room 13 Tue. AM Tue. PM Wed. AM Wed. PM Thu. AM Thu. PM Thu. PM Fri.
AM
Graphene Growth Electronic Properties and Charge Transport Room 13 Optical, Magnetic, Mechanical and Thermal Properties Room 13 Graphene Characterization Including Microscopy and Spectroscopy Room 13 Graphene Surface Chemistry, Functionalization, Biological and Sensor Applications Room 13 Dopants & Defects in Graphene; Graphene Interfaces with Other Materials Room 13 Graphene Nanostructures Room 13 Beyond Graphene: BN and Other 2D Electronic Materials; 2D Heterostructures Central Hall Graphene and Related Materials Poster Session Room 13 Graphene Device Physics and Applications
Helium Ion Microscopy Focus Topic Wed. PM Room 19 Thu. AM Room 19
Basics of Helium Ion Microscopy Imaging and Lithography with the Helium Ion Microscope Thu. PM Central Hall Aspects of Helium Ion Microscopy Poster Session
Structure–Property Relationships in Epitaxial Oxide Interfaces Mon. PM Room 7 Chemistry of Oxide Surfaces and Interfaces Tue. PM Central Hall Oxide Interfaces and Heterostructures Poster Session
Scanning Probe Microscopy Focus Topic Tue. PM Room 16 Wed. AM Room 16 Wed. PM Room 16
Spectroscopic Ellipsometry Focus Topic Mon. AM Room 19
Spectroscopic Ellipsometry for Photovoltaics and Semiconductor Manufacturing Mon. PM Room 19 Spectroscopic Ellipsometry: From Organic and Biological Systems to Inorganic Thin Films Tue. PM Central Hall Spectroscopic Ellipsometry Poster Session
Transparent Conductors and Printable Electronics Focus Topic Wed. PM Room 7 Printable and Flexible Electronics Thu. AM Room 7 Transparent Conductors and Devices Thu. PM Central Hall Transparent Conductors and Printable Electronics Poster Session
Tribology Focus Topic Tue. AM Room 19
In Situ Microscopy and Spectroscopy Focus Topic Tue. AM Room 7
In Situ Spectroscopic Studies of Catalysis and Gas-Solid Reactions Tue. PM Room 7 In Situ Studies of Organic and Soft Materials and In Situ Microscopy Tue. PM Central Hall In Situ Microscopy and Spectroscopy Poster Session Wed. AM Room 7 In Situ Characterization of Solids: Film Growth, Defects, and Interfaces
Advances in Scanning Probe Imaging Probe-Sample Interactions, NanoManipulation and Fabrication Emerging Instrument Formats
Self Healing Coatings, Bio-Inspired Design, and Frictional Properties of Biological Materials Tue. PM Room 19 Molecular Origins of Friction and Wear Tue. PM Central Hall Tribology Poster Session Wed. AM Room 19 Tribology and Wear of Low-Friction Coatings and Materials
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TAMPA MARRIOTT WATERSIDE HOTEL AND MARINA
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TAMPA CONVENTION CENTER UPPER LEVEL
LOWER LEVEL
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MEETINGS AND SPECIAL EVENTS SATURDAY, OCTOBER 27, 2012 2:00 p.m. Education Committee Meeting ................................................................................................ Greco Boardroom (H) 6:30 p.m. Education Committee Dinner .................................................................................................. IL Terrazzo Restaurant (H) SUNDAY, OCTOBER 28, 2012 7:30 a.m. Fourteenth Topical Conference on Quantitative Surface Analysis (QSA 14)......................... 20 (CC) 8:45 a.m. AVS Board of Director’s Meeting........................................................................................... Meeting Room 1 (H) 12:30 p.m. AVS Board of Director’s Lunch.............................................................................................. Meeting Room 2 (H) 1:00 p.m. Tutorial: Nanomanufacturing: Current Status and Future Prospects....................................... 16 (CC) 2:00 p.m. Companion Tour Registration ................................................................................................. Level 2 Lobby (CC) 2:00 p.m. JVST Associate Editor’s Meeting ............................................................................................ Meeting Room 3 (H) 4:00 p.m. Biomaterials Plenary Session and Reception........................................................................... 23 (CC) 4:00 p.m. International Interactions Committee Meeting ........................................................................ Meeting Room 2 (H) 6:00 p.m. Professional Development Workshop: Skills for Industrial Scientists & Engineers............... 16 (CC) 6:00 p.m. Science Educators’ Workshop Teachers’ Reception ............................................................... Meeting Room 9 (H) 6:00 p.m. Vacuum Technology Division Executive Committee Meeting and Dinner ............................ Meeting Room 4 (H) 7:00 p.m. ASTM E-42 Business Meeting ................................................................................................ 20 (CC) 7:00 p.m. Short Course Committee Meeting ........................................................................................... Bayshore Boardroom (H) 7:00 p.m. International Dignitaries & Chapter Chairs Reception (Invitation Only)................................ Presidential Suite (H) MONDAY, OCTOBER 29, 2012 7:00 a.m. Companion Tour Registration ................................................................................................. Main Lobby (H) 8:00 a.m. Science Educators’ Workshop ................................................................................................. Meeting Room 6 (H) 8:20 a.m. Albert Nerken Award Lecture, S. Tougaard, Univ. of Southern Denmark. ........................... 20 (CC) 12:00 p.m. Plenary Lecture, Joel E. Kostka, Georgia Institute of Technology, “The BP Oil Spill in the Gulf of Mexico: Are Microbes Helping to Clean up the Mess?” ... Ballroom B (CC) 12:00 p.m. Science Educators’ Workshop Lunch...................................................................................... Meeting Room 7 (H) 1:00 p.m. 2013 AVS Program Committee Meeting and Lunch............................................................... Florida Ballroom VI (H) 1:15 p.m. Professional Development Seminar: JVST Writer’s Workshop .............................................. Florida Ballroom V (H) 5:20 p.m. Biomaterial Interfaces Division Business Meeting ................................................................. 23 (CC) 5:30 p.m. Electronic Materials and Processing Division Forum: Careers at LAM Research Reception.... 9 (CC) 5:30 p.m. Welcome Mixer ....................................................................................................................... Riverwalk (CC) 7:00 p.m. Applied Surface Science Division Executive Committee Dinner ........................................... Meeting Room 5 (H) 7:00 p.m. Professional Development Seminar: Federal Funding & Research Opportunities Town Hall..... Florida V (H) 7:15 p.m. Publications Committee Meeting and Dinner.......................................................................... TBD (Offsite) 7:30 p.m. Thin Film Division Award Presentation.................................................................................. Meeting Room 1 (H) 8:30 a.m.-5:00 p.m. Short Course Program................................................................................................ Various Rooms (CC) TUESDAY, OCTOBER 30, 2012 7:00 a.m. Companion Tour Registration ................................................................................................. Main Lobby (H) 7:00 a.m History Committee Meeting .................................................................................................... Meeting Room 2 (H) 8:00 a.m. Awards Committee Meeting and Lunch.................................................................................. Meeting Room 3 (H) 8:00 a.m. Science Educators’ Workshop ................................................................................................. Meeting Room 6 (H) 8:20 a.m. Gaede Langmuir Award Lecture, D. Menzel, Fritz-Haber Insitut and Techn Univ. of Muenchen, Germany ........................ 21 (CC) 9:40 a.m. Vacuum Technology Division Business Meeting ................................................................... 14 (CC) 10:00 a.m. Session Coffee Break............................................................................................................... West Exhibit Hall (CC) 12:00 p.m. Chapters, Divisions, and Groups Meeting and Lunch ............................................................. Meeting Room 5 (H) 12:00 p.m. Exhibit Hall Lunch .................................................................................................................. West Exhibit Hall (CC) 12:00 p.m. Job Information Forum and Lunch .......................................................................................... Salon E (H) 12:00 p.m. Science Educators’ Workshop Lunch...................................................................................... Meeting Room 7 (H) 3:00 p.m. Marketing and Communications Committee Meeting ............................................................ Greco Ballroom (H) 3:20 p.m. Session Refreshment Break ..................................................................................................... West Exhibit Hall (CC) 5:45 p.m. Magnetic Interfaces and Nanostructures Division Business Meeting ..................................... 16 (CC) 6:00 p.m. Poster Session and Refreshments ............................................................................................ Central Exhibit Hall (CC) 6:05 p.m. Electronic Materials and Processing Division Business Meeting ........................................... 9 (CC) 6:05 p.m. Nanometer-scale Science and Technology Business Meeting ................................................ 12 (CC) 6:05 p.m. Plasma Science and Technology Division Business Meeting ................................................. 24 (CC) 6:05 p.m Surface Science Division Business Meeting ........................................................................... 22 (CC) 6:05 p.m. Thin Film Division Business Meeting ..................................................................................... 11 (CC) 6:20 p.m. Electronic Materials and Processing Division Forum: Moore’s Law and Careers at Intel ..... 9 (CC) 6:30 p.m. Chapter, Divisions, and Groups Committee Meeting and Dinner........................................... IL Terrazzo Restaurant (H) CC = Tampa Convention Center H = Tampa Marrriott Waterside Hotel & Marina
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MEETINGS AND SPECIAL EVENTS 6:30 p.m. 6:30 p.m. 6:30 p.m. 6:30 p.m. 7:00 p.m.
Manufacturing Science and Technology Group Committee Meeting and Dinner .................. Meeting Room 7 (H) MEMS and NEMS Technical Group Executive Committee Meeting and Dinner.................. Meeting Room 1 (H) Magnetic Interfaces and Nanostructures Division Executive Committee Meeting and Dinner..... Meeting Room 3 (H) Nanometer-scale Science and Technology Division Meeting and Dinner .............................. Meeting Room 5 (H) Biomaterial Interfaces Division Executive Committee Meeting and Dinner and Biointerphases Editorial Board Meeting and Dinner........................................................ TBD (Offsite) 7:00 p.m. Electronic Materials and Processing Division Executive Committee Meeting and Dinner .... Meeting Room 2 (H) 7:00 p.m. Plasma Science and Technology Executive Committee Meeting and Dinner......................... Meeting Room 6 (H) 7:00 p.m. Surface Science Division Executive Committee Meeting and Dinner .................................... Meeting Room 8 (H) 7:00 p.m. Thin Film Division Executive Committee Meeting and Dinner.............................................. Meeting Room 4 (H) 7:30 p.m. Applied Surface Science Division Business Meeting.............................................................. Florida Ballroom I-III (H) 8:00 p.m. ASTM E-42/ASSD Workshop, “XPS and Beyond: ISS, UPS, HIM, APT, and Other TLAs (Three Letter Acronyms)” ......................................................................................... Florida Ballroom V (H) 8:30 a.m.-5:00 p.m. Short Course Program............................................................................................... Various Rooms (CC) 10:00 a.m.-5:30 p.m. Equipment Exhibition................................................................................................. West Exhibit Hall (CC) 10:20 a.m.-10:40 a.m. Exhibitors & Manufacturers Technology Spotlight.................................................... West Exhibit Hall (CC) 12:00 p.m.-2:00 p.m. Exhibitors & Manufacturers Technology Spotlight.................................................... West Exhibit Hall (CC) 3:20 p.m.-4:00 p.m. Exhibitors & Manufacturers Technology Spotlight.................................................... West Exhibit Hall (CC) WEDNESDAY, OCTOBER 31, 2012 6:15 a.m. 32nd Annual AVS Run ............................................................................................................ Bayshore Sidewalk (H) 7:00 a.m. Companion Tour Registration ................................................................................................. Main Lobby (H) 10:00 a.m. Session Coffee Break............................................................................................................... West Exhibit Hall (CC) 12:00 p.m. Exhibit Hall Lunch .................................................................................................................. West Exhibit Hall (CC) 12:00 p.m. Nanometer-Scale Science and Technology Division Public Student Award Competition ........ 12 (CC) 3:20 p.m. Session Refreshment Break ..................................................................................................... West Exhibit Hall (CC) 4:30 p.m. E&M Reception (Invitation Only)........................................................................................... West Exhibit Hall (CC) 4:40 p.m. Medard Welch Award Lecture, Y.J. Chabal, The Univ. of Texas at Dallas ........................... 22 (CC) 6:15 p.m. AVS Awards Ceremony .......................................................................................................... Ballroom B (CC) 7:15 p.m. AVS Awards Reception........................................................................................................... Florida Ballroom (H) 8:30 a.m.-5:00 p.m. Short Course Program................................................................................................ Various Rooms (CC) 10:00 a.m.-4:30 p.m. Equipment Exhibition................................................................................................. West Exhibit Hall (CC) 10:20 a.m.-10:40 a.m. Exhibitors & Manufacturers Technology Spotlight................................................... West Exhibit Hall (CC) 12:20 p.m.-2:00 p.m. Exhibitors & Manufacturers Technology Spotlight................................................... West Exhibit Hall (CC) 3:20 p.m.-4:00 p.m. Exhibitors & Manufacturers Technology Spotlight.................................................... West Exhibit Hall (CC) THURSDAY, NOVEMBER 1, 2012 7:00 a.m. Companion Tour Registration ................................................................................................. Main Lobby (H) 7:00 a.m. Professional Leadership Committee Meeting and Breakfast................................................... Café Waterside Restaurant (H) 8:00 a.m. Advanced Surface Engineering Division Business Meeting ................................................... Meeting Room 1 (H) 8:00 a.m. Advanced Surface Engineering Division Executive Committee Meeting (Lunch Offsite)..... Meeting Room 1 (H) 8:40 a.m. Peter Mark Award Lecture, C.H. Sykes, Tufts University ...................................................... 22 (CC) 10:00 a.m. Session Coffee Break............................................................................................................... West Exhibit Hall (CC) 12:00 p.m. Exhibit Finale and Refreshments............................................................................................. West Exhibit Hall (CC) 12:00 p.m. Surface Science Division Mort Traum Awards Ceremony ..................................................... 22 (CC) 12:00 p.m. Plasma Science and Technology Division Coburn and Winters Award Ceremony................ 24 (CC) 12:15 p.m. 2013 AVS Program Committee Chairs’ Lunch....................................................................... Meeting Room 4 (H) 12:15 p.m. AVS Business Meeting............................................................................................................ 25 (CC) 6:00 p.m. Poster Session and Refreshments ............................................................................................ Central Exhibit Hall (CC) 6:30 p.m. 2012/2013 Program Committee Reception and Dinner........................................................... Meeting Room 4 (H) 7:00 p.m. Surface Science Spectra Editorial Board Dinner..................................................................... Meeting Room 3 (H) 8:30 a.m.-5:00 p.m. Short Course Program............................................................................................... Various Rooms (CC) 10:00 a.m.-2:00 p.m. Equipment Exhibition................................................................................................. West Exhibit Hall (CC) 12:00 p.m.-1:00 p.m. Exhibitors & Manufacturers Technology Spotlight.................................................... West Exhibit Hall (CC) FRIDAY, NOVEMBER 2, 2012 8:30 a.m.-5:00 p.m. Short Course Program............................................................................................... Various Rooms (CC)
CC = Tampa Convention Center H = Tampa Marrriott Waterside Hotel & Marina
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AVS Short Course Information October 28 – November 2, 2012 Tampa Convention Center Tampa, Florida Course Location and Hotel Accommodations
How To Register • •
All short courses will be held at the Tampa Convention Center (in conjunction with the AVS 59th International Symposium and Exhibition) located at 333 S. Franklin St, Tampa, FL. AVS is pleased to offer special rates at two Tampa hotels—Tampa Marriott Waterside Hotel & Mariana (HQ-/$187 single/double occupancy) and the Embassy Suites Tampa Downtown ($187 single/double occupancy), plus tax. Housing reservations may be made online at http://www2.avs.org/symposium/AVS59/pages/greetings.html and click on Housing & Travel tab. Reservations must be made no later than October 5, 2012.
•
You will receive an e-mail confirmation letter with specific registration/course details. To check on the status of your registration, call 530-896-0477, or e-mail
[email protected]. Schedule and Class Materials Courses will begin at 8:30 a.m., finish at 5:00 p.m., and have a 1½ hour lunch break. Students are encouraged to visit the exhibition Tuesday, Wednesday and Thursday, during lunch and the morning/afternoon breaks. Lunch is NOT included.
Registration Deadline Policy Complete and return the registration form to enroll. Upon receipt of your registration form and payment, you will receive an e-mail confirmation with specific registration/course details. •
•
•
Early Registration--Important! To ensure early registration rates please be sure your registration form and payment are received by the AVS office no later than September 28, 2012. Late (or Onsite) Registration-Following the September 28 early registration deadline, course fees will be marked up $50 per course ($25 per course for students). If you choose to register onsite, it is on a first-come first-served basis. Please check class/space availability, 530-896-0477,
[email protected]. Cancellations: If notice of cancellation is received on or before October 12, 2012, fees will be fully refunded. After October 12, refunds will be given, less a $100 processing fee. No refunds/course credit for individuals who do not show up for their course(s).
Attendees may obtain class materials at the short course registration desk during conference registration hours. The short course fee for some of the courses includes the cost of a published, hardcover textbook. Certificates of completion will be given to all students attending the full course. Dress Code Casual business attire. However, since room temperatures fluctuate, please bring a light sweater or jacket. Onsite Courses, Courses by Request and Information Request Forms Let AVS bring our short courses to you, complete the Onsite Course Request form, http://www.avs.org/education.onsite.form.aspx.
Registration Fee Discounts (Apply only one discount per registrant) •
•
•
By WWW: Complete the online registration form and press “Submit.” By Fax/Phone: Fax your completed registration form to AVS at 530-896-0487. If you prefer to pay by check, you may first confirm your registration, call 530-896-0477. By Mail: Mail your completed registration form and payment to: AVS, 110 Yellowstone Dr., Ste. 120, Chico, CA 95973 (AVS tax ID# 04-2392373).
Don’t see a course you want? Use the online Courses by Request form at http://www.avs.org/education.byrequest.aspx to make a suggestion.
Multi-Course Discount provides a $300 discount for every three courses taken, by one person, at a specific short course program (i.e., the same location and calendar week). This offer excludes Full-time students. Member’s Discount provides a $75 discount per location offering for current AVS members. This offer excludes Full-time students. Full-time students may register at a discounted rate of $100/day for any course (student rates for each course are listed on the registration form). Please note, some courses include a supplemental textbook, however, as a student registrant the textbook is not included with your registration.
If you would like more information or would like to begin receiving notifications on upcoming course offerings in your area, contact AVS, 530-896-0477, or complete the Information Request form, http://www.avs.org/education.shortcourse.request.aspx.
AVS is not responsible for applying, or being aware that you may qualify for any discount. You may only select one discount option when registering. If you qualify for more than one discount, please select the greater of the two to be applied.
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AVS Short Course Registration Form
Payment Information: Check enclosed (payable to AVS, 110 Yellowstone Dr., Ste. 120, Chico, CA 95973—AVS tax ID# 04-2392373)
October 28 – November 2, 2012 Tampa Convention Center Tampa, Florida
Cash/Travelers Check
For each course you wish to attend, please circle the cost listed to the right of the course name. For onsite registration, please add a $50 per course surcharge to your registration total.
Charge My:
MasterCard
VISA
AMEX
Cardholder Name:_____________________________________ Card Number:________________________________________
Courses (Regular/Student) Vacuum and Equipment Technology : NEW! Analysis of Mass Spectrometer (RGA) Spectra, 11/2 $575/$100 Fundamentals of Vacuum Technology, 10/29–11/1 $1,495/$400 UHV Design and Practices, 11/2 $575/$100
Exp. Date:____________________ CCID#:_________________ Signature:___________________________________________ Registration Information Name:______________________________________________
Materials and Interface Characterization: X-ray Photoelectron Spectroscopy (XPS or ESCA) & Auger Electron Spectroscopy (AES), 10/29 $575/$100 Focused Ion Beams (FIB) and Secondary Ion Mass Spectrometry (SIMS), 10/30 $575/$100 Composition Depth Profiling, 10/31 $575/$100 Comprehensive Course on Surface Analysis and Depth Profiling by XPS or ESCA, AES, FIB & SIMS, 10/29-31 (2 or 3 days) (10/29-30) $850/$200 (10/29-31) $1,300/$300 NEW! Industrial Ion Sources, 10/29 $575/$100 Scanning Electron Microscopy and X-ray Microanalysis, 10/31 $575/$100 Surface Characterization of Biomaterials, 11/1 $575/$100
Title:________________________________________________
Materials Processing: Atomic Layer Deposition, 11/1 Chemical Mechanical Planarization for Microelectronics Manufacturing, 10/29 Photolithography Process in IC Production, 10/30, Plasma Etching and RIE: Fundamentals, 10/30 Plasma Etching and RIE: Fundamentals and Applications, 10/30-31, Sputter Deposition, 11/2
Advisor E-mail:________________________________________
Subtotal: 2012 AVS member’s discount subtract $75 from the subtotal: Multi-course discount (3 or more courses) subtract $300 from the subtotal: For onsite registration add $50 per course ($25 per course for students) to your total: Tutorial Nanomanufacturing: Current Status and Future Prospects, 10/28 Total enclosed:
Company:___________________________________________ Address:_____________________________________________ Mail Stop:____________________________________________ City:__________________ State:______ Zip Code:__________ Country:____________________ Province:________________ Phone:_____________________ Fax:____________________ E-mail:______________________________________________ Check here if you are a full time student (12 or more credits) Advisor Name:________________________________________
$575/$100
Nanomanufacturing: Current Status and Future Prospects Tutorial Sunday, October 28, 2012, 1:00 – 5:00 p.m.
$575/$100 $575/$100 $575/$100
This tutorial will provide an introduction to nanomanufacturing. The tutorial begins by drawing the distinction between nanofabrication— the technology for making small things—and nanomanufacturing— the application of nanofabrication technologies to making money. This is followed by a discussion of the characteristics required of a nanomanufacturing process in terms of throughput, precision and defectivity, as it relates to the type and functionality of nanostructures being made.
$850/$200 $675/$100
____________ ____________
Next, specific examples are considered, with a detailed examination of the integrated circuit fabrication process and those factors that have led to it becoming the most successful current nanomanufacturing industry. This will serve as a baseline against which to compare and contrast new and emerging nanomanufacturing processes and applications ranging from nanocomposites to DNA selfassembly to tip-based, single-atom manipulation to nanoparticle drug delivery systems to optical metamaterials.
____________ (Regular/Student) $100/$75
____________
Finally, nanomanufacturing complexity is considered in terms of product functionality and cost.
Full time students may register at a discounted rate of $100 per day for any course (except for the tutorial). Please note, some courses include a supplemental textbook, however, as a student registrant the textbook is not included with your registration
For more information on this tutorial, please visit http://www.avs.org/education.schedule.aspx
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AVS-59 Companion Tours 2012 - Tampa Let’s have fun in Tampa! With the much appreciated help from James Lyn Provo, I have a diverse week of activities for you to enjoy in Tampa. We’ll start off Monday with a tour of Ybor City, a national Landmark district. Our guides are Grandchildren of immigrants who came to Ybor City seeking their opportunity to work and achieve the American Dream. We’ll get a unique perspective of the “Latin Culture” as they show us the city that their descendants helped to develop. Companions will be given the choice to enjoy lunch at the world famous Columbia restaurant, which is Florida’s oldest and the world’s largest Spanish restaurant. In the afternoon we’ll be touring the Henry B. Plant Museum, which is housed in the 1891 Tampa Bay Hotel. The Museum interprets the turn of the century Tampa Bay Hotel and the lifestyles of the Rich and Famous during the “Gilded Age”. The museum will transport us to the Victorian period, the beginning of Florida’s tourist industry and the early years of the city of Tampa. Tuesday we will be going to experience Busch Gardens. Your ticket is a 1-Day admission to Busch Garden with second visit free, with validation at customer service inside the entrance gates. The tickets also include a meal voucher that you can redeem at any quick-serve restaurant in the park. These special admission tickets, with second visit free and meal voucher, are available for companions, attendees and exhibitors. They are good from Oct. 28 – Nov 6. They need to be pre-ordered. Transportation is only available for our Tuesday outing. We’ll be exploring the Tampa Aquarium on Wednesday. We’ll have the opportunity to see more than 20,000 aquatic animals and plants from playful river otters to intimidating sharks during our visit. For the brave at heart, you can touch a bamboo shark in the lobby touch tank or a sea star in the No Bone Zone. We’ll also be able to come face-to-beak with endangered penguins during their daily Penguin Promenades. After lunch at the aquarium, we will depart on the Wild Dolphin Cruise, an entertaining tour aboard the Bay Sprit II, a 72 foot powered catamaran. During our 90 minute cruise we will be able to view some of the 500 wild dolphins who call Tampa Bay home. Thursday we’ll be venturing to St. Petersburg, where we will be visiting the Dali Museum and the Chihuly Glass Collection. At the Dali Museum, we will visit the most comprehensive collection of works by the late Spanish surrealist, Salvador Dali. We’ll enjoy a private docent tour, in a new museum that includes headphones for maximum enjoyment, while enjoying breathtaking views of Tampa Bay as we go thru the new galleries within this “glass enigma”. In the afternoon, we’ll enjoy a docent led tour of the Chihuly Collection. This presentation is unique because it is the first installation of Chihuly art in a building that was designed especially for that purpose. The art and the architecture of the museum both work together to create an experience unlike any other Chihuly art exhibition. We will also visit the Morean Arts Center Glass Studio and the Hot Shop where we’ll watch glassblowers create one-of-a-kind pieces. Again this year, we will have a room to gather in every morning, so plan to bring your breakfast and join us even if you are not coming on a tour that day. I hope you will enjoy the program that I’ve planned and hope you’ll join us in the fun of exploring Tampa! Marilyn Ruzic, Tour Coordinator
[email protected]
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Please note: ALL of these tours have a minimum number of required participants for the tour to go OR to qualify for special pricing. Please sign up before the deadline, if possible, ***************************** Marilyn Ruzic will be available in the AVS Registration area in the Lobby of the Tampa Convention Center from 2 – 6 on Sunday, and in our breakfast area before the start of each tour. She will be happy to assist with any questions. If Marilyn is not available, please consult the staff at the AVS Registration Manager’s counter and they will contact her for you. ********************************
Monday, October 29th: Classic Ybor City National Historic Landmark District Tour and Henry B. Plant Hotel Museum Tour
8:00 a.m. 8:45 a.m. 9:00 a.m.
Meet in the gathering breakfast room Meet our tour guides in the lobby and board our bus. Depart for our city tour of Ybor City Museum State Park: The Ferlita Bakery La Cassita: The cigar maker’s house museum Replica of a European Style Garden The Museum Store Riding tour of “La Setima” The Italian Club Central Ybor The Ritz Theater Jose Marti Park The El Pasaje Hotel La Segunda Central Bakery El Centro Asturiano De Tampa
12:00-2:00 p.m.
Lunch on your own with suggestions of guides OR World Famous Columbia Restaurant Advanced reservations are required because the wait would be too long for walk-ins. You need to indicate your decision when you register for the tour Menu can be checked out at: www.columbiarestaurant.com
2:00 p.m.
Henry B. Plant Museum Tour
4:30 p.m.
Return to hotel
PRICE:
$ 72.00
Before Oct. 1st
$ 82.00
After Oct. 1st 63
*****************************
Tuesday, October 30th: Day at Busch Gardens Special: 1 day ticket with 2nd day free and meal voucher available for attendees w/o transportation to use between Oct. 29 and Nov.6th
8:45 a.m.
Gather in meeting room
9:20 a.m.
Meet in the lobby and board the bus
10:00 a.m.
We will be dropped off at Busch Gardens where everyone will be on their own or in small groups of their choice We will go to Customer Service to validate 2nd day free admission
5:30 p.m.
Meet bus to return to the hotel
PRICE:
$ 116.00 $ 126.00 $ 96.00
Before Oct. 1st After Oct. 1st No transportation included; Offer valid from Oct. 29–Nov. 6 *****************************
Wednesday, October 31st: Florida Aquarium & Wild Dolphin Cruise 9:00 a.m.
Gather in meeting room
9:30 a.m.
Walking to the Aquarium along The Riverwalk Stopping to see things is part of the adventure!
10:00 a.m.
Aquarium exploration on our own
1:45 p.m.
Board catamaran Bay Sprit II for cruise (1.5 hour)
3:30 p.m.
Return to hotel by walking or trolley ($2.50) Or Explore Aquarium more and return to hotel at your leisure
PRICE:
$ 36.00
Before Oct. 1st
$ 38.00
After Oct. 1st 64
*****************************
Thursday, November 1st: The Dali Museum, Chihuly Collection, Glass Studio & Hot Shop
9:00 a.m.
Meet in greeting room
9:30 a.m.
Meeting in the lobby and board the bus
10:00 a.m.
Docent guided tour of the Dali Museum
12:00 p.m.
Lunch on our own
1:00 p.m.
Docent guided tour of the Chihuly Collection Glass Studio and Hot Shop
4:30 p.m.
Return to hotel
PRICE:
$ 85.00
Before Oct. 1st
$ 95.00
After Oct. 1st
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32nd Annual AVS RUN
. . . the Oldest Professional Society Run in the World! When:
Wednesday, October 31, 2012
Venue:
AVS 59th International Symposium 5 x 1012 nm (5 km for non-nanos)
Distance: Time
6:15 a.m.
Place:
Along the Bayshore Sidewalk, Tampa
Fee:
$30.00
Our 32nd Annual AVS Run, the oldest professional society Run on our planet, will be held with our AVS 59th International Symposium & Exhibition in Tampa, Florida. This year’s race will take place along the Bayshore Sidewalk, the longest continuous sidewalk in the world! The start and finish is within walking distance of the Tampa Convention Center. With your entry fee you will receive a run t-shirt, race number, and awards. Also, this year’s race will be chip-timed! The run records are still held by Mike Martini (who ran this event in an astounding 14:46!) and by Heidi Denton (18:17). The race will be held on Wednesday morning at a time that will allow runners to make the first sessions. The awards ceremony will be held Wednesday noon – at the Run-registration area. The CORPORATE RACE and the DIVISIONS AND GROUPS RACE will be highlights again this year. Each team representing a corporate entity (university, unemployed, research organization, manufacturer, etc.) or Division/Group must have 3 team members to qualify. Times are handicapped by age and sex. In the interest of enhancing the already billowing AVS membership, non-AVS members will be time penalized. The CORPORATE CUP is still held by the fast, but now-ageing BATTELLE PNL team – which expects to be challenged more than ever this year. The DIVISIONS/GROUPS CUP in Nashville was captured by the VTD (I think)! Contact the Race Director with questions or suggestions (bridget_rogers@ avs.org). See you in Tampa!
Please register by October 15, 2012 Attendee Name: Company: Address: Address 2: City: Phone:
State:
Postal Code: Fax:
Country: E-Mail:
Sex: Male : Female: Age: AVS Member: Yes : No : Shirt Size: S M L XL XXL Race and Shirt: $30.00 Check (Make payable to AVS in U.S. dollars and drawn on a U.S. bank, AVS Tax ID No: 04-2392373) AMEX MasterCard VISA Card Number: Cardholder Name:
Expiration Date
CCID 66
http://www2.avs.org/conferences/ICMCTF/ Sponsored by the AVS Advanced Surface Engineering Division
CONFERENCE OVERVIEW The ICMCTF is the premier international conference in the field of thin-film deposition , characterization, and advanced surface engineering , promoting global exchange of ideas and information among scientists, technologists, and manufacturers. The conference includes more than 80 high-profile invited speakers across eleven symposia, along with focussed topic sessions, short courses, equipment exhibition, and social events. A Coatings for Use at High Temperature B Hard Coatings and Vapor Deposition Technology C Fundamentals and Technology of Multifunctional Thin Films: Towards Optoelectronic Device Applications D Coatings for Biomedical and Healthcare Applications E Tribology & Mechanical Behavior of Coatings and Engineered Surfaces F New Horizons in Coatings and Thin Films
PLENARY LECTURE “Designer Materials for Unconventional Electronics” Tobin Marks Professor of Chemistry and Materials Science and Engineering, Northwestern University, USA
Applications, Manufacturing and Equipment G TS1 Surface Engineering for Thermal Transport, Storage and Harvesting TS2 Characterization: Linking Synthesis, Properties and Microstructure TS3 Energetic Materials and Micro-Structures for Nanomanufacturing TS4 Graphene and 2D Nanostructures
EXHIBITION KEYNOTE LECTURE “Atmospheric Pressure Plasmas for Inline Coatings: Status and Challenges” Francoise Massines Directeur de Recherches au CNRS, Perpignan, France
GENERAL CHAIR
PROGRAM CHAIR
ICMCTF MANAGER
EXHIBIT MANAGER
Paul Mayrhofer Montanuniversitaet Leoben Leoben, Austria
[email protected]
Yip-Wah Chung Northwestern University Evanston, Illinois, USA
[email protected]
Phyllis Greene
[email protected]
Jeannette DeGennaro AVS
[email protected]
ICMCTF SECRETARY Mabel Zabinski
[email protected]
Mark your calendar Mark your calendar Abstract deadline: Abstractsubmission submission deadline: Awards nomination deadline: Awards nomination deadline: Manuscript submission submission deadline: Manuscript deadline: Conference pre-registration deadline: Conference pre-registration deadline:
October 2012 October 1,1, 2012 October 1, 2012 October 1, 2012 March 1,1,2013 March 2013 March 23, March 23,2013 2013
Journal for Quantitative Biological Interface Data Open Access ■ Quantitative Data on Biological and Soft Matter Interfaces ■ Experiments, Modeling, Theory and Applications ■ Only journal in this subject area ■
www.biointerphases.org Biointerphases is a peer-reviewed open access journal published under the brand SpringerOpen. It is an interdisciplinary journal which explores all aspects of quantitative soft matter interfaces: chemistry, physics, engineering, theory and modeling. Topics covered include interface spectroscopy, in vivo and in vitro mechanisms, interface modeling, adhesion phenomena, protein-surface interactions, biomembranes on a chip, cell-surface interactions, biosensors/biodiagnostics, bio-surface modification, the nano-bio interface, biotribology/biorheology, molecular recognition, cell patterning for function, polyelectrolyte surfaces, and ambient diagnostic methods. In addition to regular submissions, the journal features In Focus sections examining specific topics and edited by experts in the field. Editor-in-Chief: Michael Grunze, Universität Heidelberg “Biointerphases is an excellent information source for research in the field of cell adhesion and mechanics with growing importance.” — Dr. Joachim Spatz, MPI Intelligent Systems & University of Heidelberg “The themed issues of Biointerphases provide valuable, in-depth accounts of the current state of research in specific topic areas of biointerface science.” — Dr. Stefan Zauscher, Duke University AVS Publications Office 100 Park Drive, Suite 105, Caller Box 13994 Research Triangle Park, NC 27709 919-361-2787 • Fax 919-361-1378 •
[email protected] Visit us online at www.avs.org
Journal of Vacuum Science & Technology A Surfaces ■ Films ■ Vacuum ■
www.jvsta.org Understanding interfaces and surfaces at a fundamental level and using this understanding to advance the state-ofthe-art in various technological applications defines the scope of the Journal of Vacuum Science and Technology A.. This journal is devoted to publishing reports of original research, letters, and review articles.
Website Features Research Highlights, Most Cited, and Most Downloaded Topics include but are not limited to: • Applied and fundamental surface science • Atomic layer deposition • Electronic and photonic materials and their processing • Magnetic thin films and interfaces • Materials and thin films for energy conversion and storage • Photovoltaics including thin-film solar cells and organic and hybrid solar cells • Plasma science and technology including plasma surface interactions, plasma diagnostics plasma deposition and etching and applications of plasmas to micro- and nanoelectronics
• Surface Engineering • Thin film deposition, etching, properties and characterization • Transmission electron microscopy including in situ methods • Tribology • Vacuum science and technology Editor-in-Chief: Eray S. Aydil, University of Minnesota
AVS Publications Office 100 Park Drive, Suite 105, Caller Box 13994 Research Triangle Park, NC 27709 919-361-2787 • Fax 919-361-1378 •
[email protected] Visit us online at www.avs.org
Journal of Vacuum Science & Technology B Nanometer Structures ■ Microelectronics ■ Processing, Measurement, Phenomena ■
www.jvstb.org The Journal of Vacuum Science and Technology B is devoted to publishing reports of original research, letters, and review articles on microelectronics and nanometer structures and devices. The emphasis is on processing, measurement and phenomena associated with micrometer and nanometer structures and devices. Processing may include vacuum processing, plasma processing and microlithography among others, while measurement refers to a wide range of materials and device characterization methods for understanding the physics and chemistry of submicron and nanometer structures and devices.
Website Features Research Highlights, Most Cited, and Most Downloaded Topics include but are not limited to: • Compound semiconductor electronics and optoelectronics • Devices for energy conversion and storage • Dielectrics in micro- and nanoelectronics • Graphene, carbon nanotubes and fullerenes: materials & devices • Group IV semiconductor microelectronics • Lithography • Microelectromechanical and nanoelectromechanical systems and devices (MEMS & NEMS)
• Nanometer science and technology • Nanostructured materials and devices including nanowires, nanoparticles and quantum dots, • Organic and molecular electronics • Photovoltaics based on nanostructured materials, dye-sensitized and other excitonic solar cells • Plasmonics • Spintronics and magnetic devices • Vacuum nanoelectronics Editor-in-Chief: Eray S. Aydil, University of Minnesota
AVS Publications Office 100 Park Drive, Suite 105, Caller Box 13994 Research Triangle Park, NC 27709 919-361-2787 • Fax 919-361-1378 •
[email protected] Visit us online at www.avs.org
Journal and Database for Individuals or Analytical Laboratories Reference Spectra ■ Spectra from Technological Materials ■ Comparison Spectra from Well-Defined Materials ■
http://avspublications.org/sss Surface Science Spectra is an international journal devoted to archiving spectra from surfaces and interfaces. Data records are peer-reviewed and technically edited. Spectral descriptions include much more detail - instrument description, calibration, and raw spectral data - than traditional journals. SSS offers XPS, Auger, UPS, SIMS, EELS/HREELS spectra from a wide range of materials. Add a cost-effective tool to your lab or library. SSS Online FREE to AVS Members. Non-Members $150 per calendar year.
Submit at www.publishinsss.com
• Includes data from over 110 labs worldwide • Contributions from over 480 authors • 4,170 individual spectra from more than 780 different materials Editors: James E. Castle, University of Surrey and Richard T. Haasch, University of Illinois “SSS is a valuable database for all the community working on the XPS of organic and inorganic Materials.” — Dr. Davide Barreca, U. Padova
Download digital data by clicking on the blue accession number located in the caption of each figure.
AVS Publications Office 100 Park Drive, Suite 105, Caller Box 13994 Research Triangle Park, NC 27709 919-226-0091 • Fax 919-361-1378 •
[email protected] Visit us online at www.avs.org
TAMPA CONVENTION CENTER UPPER LEVEL
LOWER LEVEL
72
Technical Sessions Key to Session/Paper Numbers AC AS BI BN BP EL EM EN ET EW GR HI IS LB MB MI MN MS NM NS OX PS SE SP SS TC TF TR VT
Actinides and Rare Earths Focus Topic Applied Surface Science Biomaterial Interfaces Biointerphases Focus Topic: Bioimaging Biomaterials Plenary Session Spectroscopic Ellipsometry Focus Topic Electronic Materials and Processing Energy Frontiers Focus Topic Electron Transport at the Nanoscale Focus Topic Exhibitor Technology Spotlight Graphene and Related Materials Focus Topic Helium Ion Microscopy Focus Topic In Situ Microscopy and Spectroscopy Focus Topic Late Breaking Session Biofilms and Biofouling: Marine Medical Energy Focus Topic Magnetic Interfaces and Nanostructures MEMS and NEMS Manufacturing Science and Technology Nanomanufacturing Science and Technology Focus Topic Nanometer-scale Science and Technology Oxide Heterostructures-Interface Form & Function Focus Topic Plasma Science and Technology Advanced Surface Engineering Scanning Probe Microscopy Focus Topic Surface Science Transparent Conductors and Printable Electronics Focus Topic Thin Film Tribology Focus Topic Vacuum Technology
Sessions sponsored by two divisions are labeled with both acronyms (e.g. EM+SS), then: a number to indicate parallel sessions sponsored by the same division (e.g. SS1, SS2), then: a dash followed by the first two characters of the day of the week: Monday, Tuesday, Wednesday, Thursday, Friday, then: Morning, Afternoon, Lunch, Poster, then: a number to indicate the time slot scheduled for each paper. Example:
SS1-MoM9 (Surface Science, Monday morning, 11:00 am). 73
2012 Technical Program Room/
6
7
9
10
11
12
13
14
15
Day SuA
MoM
MoA
TuM
AC+MI+SS+TF OX+EM+MI+ NS+TF Electronic Structure and Structure–Property Relationships in Spectroscopy of Epitaxial Oxide Actinides Interfaces AC+TF+SS+MI OX+SS+TF+MI Actinides and Chemistry of Rare Earths: Oxide Surfaces Thin Films and and Interfaces Surface Science
EM+TF+OX +GR High-k Dielectrics for MOSFETs I
MN+AS TF NS GR+EM+NS+ VT Characterization ALD Enabled Nanoparticles PS+SS+TF Vacuum Gauging of Surfaces and Applications and Quantum and Metrology Graphene Interfaces in Structures Growth MEMS and NEMS TF+EN NS+SP GR+EM+ET+ EM+TF+OX VT MN Multi-scale ALD for Energy Nanopatterning NS+TF +GR Gas Flow, Leaks, Interactions of Mtls and Permeation and Electronic High-k and Fabrication at Nanolithography Properties and Mass Analysis Dielectrics for the Micro- and Charge Transport MOSFETS II Nano-scale AC+EN IS+AS+SS+EN EM MN TF NS+EN GR+AS+EM+ VT Energetic Mtls In Situ Spectro- Electrical Testing Optomechanics ALD Reactions One-Dimensional MI+MN Pumping, Gas Issues for Nuclear scopic Studies of and Defects in and Photonic and Film Nanowires and Optical, Magnetic, Dynamics and Power: Fuels, Catalysis and GasIII-V’s MEMS and Properties Nanotubes Modeling Mechanical and Corrosion and Solid Reactions NEMS Thermal Properties Waste Disposal
EN+NS Nanostructured Solar Cells
EN+TF Chalcogenide Solar Cells I
EN+TF Chalcogenide Solar Cells II
TuL
TuA
MI+EN+BI Fundamental Problems in Magnetism
IS+AS+BI+ET+ GR+NS In Situ Studies of Organic and Soft Materials and In Situ Microscopy
EM Materials and Processes for Advanced Interconnects
TF+AS Modeling and Analysis of Thin Films
MI Topological Insulators and Rashba
IS+AS+OX+ET In Situ Characterization of Solids: Film Growth, Defects, and Interfaces
EM+TF Hybrid Electronic Materials and Interfaces
TF Thin Films for Encapsulation, Packaging, and Biomedical Devices
MI+OX Spintronics, Magnetoelectric, Multiferroics
TC+EM+AS Printable and Flexible Electronics
MI+SP+AS Emerging Probes in Magnetic Imaging, Reflectometry and Characterization
TC+EM+AS+ TF+EN Transparent Conductors and Devices
TF2 NS+EN+GR GR+AS+NS+SP VT EN+TF +SS ALD for Hybrid Nanomaterials in Accelerator and Thin Film, Graphene Films and Two and Three Ultra-Clean Heterostructured, Characterization Vacuum Systems Bioapplications Dimensions and Organic Incl. Microscopy Solar Cells and Spectroscopy
TuP
WeM
TF+SE+NS Glancing Angle Deposition (GLAD)
NS+AS+SS+SP GR+AS+BI+PS VT+AS+SS +SS Nanoscale Surface Analysis Graphene Surface Catalysis and and Vacuum Chem., Functional- Manufacturing Surface ization, Biological & for Accelerators Chemistry Sensor Applications
EN+PS Plasmas for Photovoltaics and Energy Applications
LB+EM+GR+ GR+AS+EM+ NS+SS MN+TR Dopants & Defects Select Topics in in Graphene; Surface and Graphene Interfaces w/Other Materials Interface Science GR+AS+NS+SS EM+SS+AS+NS Graphene Nanoelectronic Nanostructures Interfaces, Materials, and Devices
EN+TF Thin Films for Energy Applications
WeL
WeA
ThM
EM+OX TF+MI TF+AS Oxides and Thin Films for Thin Films: Dielectrics for Memory and Growth and Novel Devices Data Storage Characterizationand Ultra-dense I Memory EM TF+EM+SE+NS TF+NS+EM Processing for Nanostructuring Thin Films: Ultra Low Power Thin Films Growth and Electronics + CharacterizationSemiconductor II Heterostructures I
NS Nanophotonics and Plasmonics
NS Nanoscale Imaging and Microscopy
EN+NS Batteries and Fuel Cells
ThL
ThA
EN+NS EM+MI Thermophotovolt Semiconductor aics, Heterostructures Thermoelectrics II + Heusler and Plasmonics Alloys
TF+EM+SS TF+AS+SS Applications of Thin Films: Self-Assembled Growth and Monolayers and CharacterizationLayer-by-Layer III Assemblies
GR+EM+NS+ EM+TF+AS EN+AS SS+TF Growth and Characterization Beyond Graphene: Characterization of Energy BN & Other 2D of Group IIIMaterials and Elect. Mtls; 2D Nitride Materials Systems Heterostructures
ThP
GR+EM+ET+ EM+NS MS+NS Low-Resistance Contacts to Graphene Device Physics and Nanoelectronics Applications
FrM
74
EN+SS Photocatalysis and Solar Fuels
at a Glance 16
NM+AS+MS Metrology and Environmental Issues in Nanomanufacturing NM+NS+MS+ EM ALD & Scalable Processes for Nanomanufacturing NM+MS All Invited Session: Challenges of Nanomanufacturing from an Industrial Perspective
19
20
21
22
23
EL+TF+AS+ EM+SS+PS+ EN+NM
SE+NS SS AS Nonequillibrium Nanostructured Quantitative Thin Films and Spectroscopic Ellip- Surface Analysis and Nonlinear Coatings I: sometry for PhotoProcesses – Part 1 voltaics & SemiconInterface ductor Mfg. Aspects EL+TF+BI+AS SE+NS SS AS +EM+SS Nanostructured Surface Quantitative Spectroscopic EllipThin Films and Dynamics Surface Analysis sometry: From Coatings II: – Part 2 Organic & Biological Multifunctional Systems to Inorganic Properties Thin Films SE+PS SS TR+BI AS+BI Self Healing Coat- Practical Surface Pulsed Plasmas Surface ings, Bio-Inspired in Surface Reactivity of Analysis Design, and FricEngineering Oxides tional Properties of Biological Materials
BP+AS Biomaterials Plenary Bioimaging: In Vacuo, In Vitro, In Vivo BI Surfaces to Control Cell Response
24
25
PS+EM Atmospheric Plasma Processing and Micro Plasmas
PS Advanced FEOL/Gate Etching 1
BI PS+BI Cell-Surface Applications of (MultiInteractions: phase) Atmospheric High Plasmas (incl. Throughput Medicine & BioMethodologies logical Applications) PS1 BI+SS+AS Plasma Biomolecules at Diagnostics, Interfaces Sensors and Control 1
Central Hall
West Hall
PS2 Plasma Modeling
EW Exhibitor Technology Spotlight
PS2 Advanced FEOL/Gate Etching 2
EW Exhibitor Technology Spotlight SP+AS+BI+ET +MI+NS Advances in Scanning Probe Imaging
TR Molecular Origins of Friction and Wear
AS+BI
SS+NS
Surface Analysis of Mtls Reactivity of w/Vibrational Techniques Size and Shape (2:00-3:20pm) / Selected Multi-Technique Nanoparticles Analysis (4:00-6:00 pm)
BI+AS Characterization of Biointerfaces
SE+PS Atmospheric Pressure Plasmas
PS1 Plasma Deposition and Plasma Enhanced ALD
EW Exhibitor Technology Spotlight
PS2 Plasma Surface Interaction during Plasma Etching POSTER SESSIONS (AS, BI, EL, IS, MN, NM, OX, SE, SS, TR, VT)
SP+AS+BI+ET +MI+NM+NS+ SS+TF
Probe-Sample Interactions, NanoManipulation and Fabrication
TR+SE Tribology and Wear of LowFriction Coatings and Materials
AS
Surface Analysis of Biological Mtls w/Vibrational Techniques (8:00-10:00am) / 3D Imaging – Part 1 (10:40am-12:00pm)
SS Chemisorption on Metallic Surfaces
SS+OX Synthesis and Characterization of Oxides
BI+SS+NS PS+TC PS Bio/Nano Atmospheric Advanced Interfaces with Plasma Processing BEOL/Interconn Applications in for PV, Flexible ect Etching Biomedicine and Electronics (incl. Energy R2R)
EW Exhibitor Technology Spotlight EW Exhibitor Technology Spotlight
SP+AS+BI+ET +MI+TF Emerging Instrument Formats
HI+AS+NS Basics of Helium Ion Microscopy
ET+NS+EM HI+AS+BI+NS Electron Imaging and Transport at the Lithography Nanoscale: with the Helium Nanowires and Ion Microscope Junctions
AS+NS+SS+TF 3D Imaging - Part 2 (2:00-3:20 pm) / Advanced Data Analysis & Instrument Control (4:00-6:00 pm)
AS Applications of Large Cluster Ion Beams _ Part 1
SS Catalysis on Metals and Alloys
SS+EM Semiconductor Surfaces
BN+AS Bioimaging
SS+EN+OX Catalysis and Photocatalysis on Oxides
SS Molecular Films: Chirality & Electronic Features
MB+BI Biofilms and Biofouling in Medicine
PS1 Plasma Diagnostics, Sensors and Control 2 PS1 Plasma Processing for Disruptive Technologies (NVM, TSV, etc.)
EW Exhibitor Technology Spotlight
PS2 Plasma Surface Interactions during PECVD and Plasma Surface PS2 Low Damage Processing
EW Exhibitor Technology Spotlight ET+SS+GR+SP Electron Transport at the Nanoscale: Molecules and Defects
AS
SS+NS
LargeClusterIonBeams- Surface Science Part 2 (2:00-3:20 pm) / of Surface Analysis w/ Nanostructures Synchrotron Techniques (3:40-5:40 pm)
MB+BI Marine Biofouling
SS Liquid/Surface Interactions
PS Plasma Sources
POSTER SESSIONS (EM, EN, GR, HI, MI, NS, PS, TC, TF) ET+SS+GR+SP Electron Transport at the Nanoscale: Development of Theories and Techniques
AS+TF+VT Surface Analysis using Synchrotron Techniques
75
SUNDAY SPECIAL EVENTS 7:30 a.m. 8:45 a.m. 12:30 p.m. 1:00 p.m. 2:00 p.m. 2:00 p.m. 4:00 p.m. 4:00 p.m. 6:00 p.m. 6:00 p.m. 6:00 p.m. 7:00 p.m. 7:00 p.m. 7:00 p.m.
Fourteenth Topical Conference on Quantitative Surface Analysis (QSA 14)—20 (CC) AVS Board of Director’s Meeting—Meeting Room 1 (H) AVS Board of Director’s Lunch—Meeting Room 2 (H) Tutorial: Nanomanufacturing: Current Status and Future Prospects—16 (CC) Companion Tour Registration—Level 2 Lobby (CC) JVST Associate Editor’s Meeting—Meeting Room 3 (H) Biomaterials Plenary Session and Reception—23 (CC) International Interactions Committee Meeting—Meeting Room 2 (H) Professional Development Workshop: Skills for Industrial Scientists & Engineers—16 (CC) Science Educators’ Workshop Teachers’ Reception—Meeting Room 9 (H) Vacuum Technology Division Executive Committee Meeting and Dinner—Meeting Room 4 (H) ASTM E-42 Business Meeting—20 (CC) Short Course Committee Meeting—Bayshore Boardroom (H) International Dignitaries & Chapter Chairs Reception (Invitation Only)—Presidential Suite (H)
CC = Tampa Convention Center H = Tampa MarriotWaterside Hotel & Marina
76
NOTES
77
Sunday Afternoon, October 28, 2012 Biomaterials Plenary Session Room: 23 - Session BP+AS-SuA Biomaterials Plenary - Bioimaging: In Vacuo, In Vitro, In Vivo Moderator: M.R. Alexander, University of Nottingham, UK 4:00 pm
BP+AS-SuA1 Invited
NanoBio Imaging for New Biomedical Applications, D.W. MOON, Korea Research Institute of Standards and Science
4:20 pm
4:40 pm
Invited talk continued.
BP+AS-SuA3 Invited
3-D View into Cells by X-ray Nano-Tomography, G. SCHNEIDER, P. GUTTMANN, S. WERNER, K. HENZLER, S. REHBEIN, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Germany
5:00 pm
5:20 pm
Invited talk continued.
BP+AS-SuA5 Invited
Nanoscopy with Focused Light, S.W. HELL, Max-Planck-Institut für Biophysikalische Chemie, Germany
5:40 pm
Invited talk continued.
6:00 pm
6:20 pm
78
Anticipated Schedule Sunday Morning, October 28, 2012 TIME
SESSION
ROOM
8:00 am
______________________________________________________________________________________________________________________________________________
8:20 am
______________________________________________________________________________________________________________________________________________
8:40 am
______________________________________________________________________________________________________________________________________________
9:00 am
______________________________________________________________________________________________________________________________________________
9:20 am
______________________________________________________________________________________________________________________________________________
9:40 am
______________________________________________________________________________________________________________________________________________
10:00 am
______________________________________________________________________________________________________________________________________________
10:20 am
______________________________________________________________________________________________________________________________________________
10:40 am
______________________________________________________________________________________________________________________________________________
11:00 am
______________________________________________________________________________________________________________________________________________
11:20 am
______________________________________________________________________________________________________________________________________________
11:40 am
______________________________________________________________________________________________________________________________________________
12:00 pm
______________________________________________________________________________________________________________________________________________
Lunch when
______________________________________________________________________________________________________________________________________________
with
______________________________________________________________________________________________________________________________________________
where
______________________________________________________________________________________________________________________________________________
Anticipated Schedule Sunday Afternoon, October 28, 2012 TIME
SESSION
ROOM
1:00 pm
______________________________________________________________________________________________________________________________________________
1:20 pm
______________________________________________________________________________________________________________________________________________
1:40 pm
______________________________________________________________________________________________________________________________________________
2:00 pm
______________________________________________________________________________________________________________________________________________
2:20 pm
______________________________________________________________________________________________________________________________________________
2:40 pm
______________________________________________________________________________________________________________________________________________
3:00 pm
______________________________________________________________________________________________________________________________________________
3:20 pm
______________________________________________________________________________________________________________________________________________
3:40 pm
______________________________________________________________________________________________________________________________________________
4:00 pm
______________________________________________________________________________________________________________________________________________
4:20 pm
______________________________________________________________________________________________________________________________________________
4:40 pm
______________________________________________________________________________________________________________________________________________
5:00 pm
______________________________________________________________________________________________________________________________________________
79
MONDAY SPECIAL EVENTS 7:00 a.m. 8:00 a.m. 8:20 a.m. 12:00 p.m. 12:00 p.m. 1:00 p.m. 1:15 p.m. 5:20 p.m. 5:30 p.m. 5:30 p.m. 7:00 p.m. 7:00 p.m. 7:15 p.m. 7:30 p.m.
Companion Tour Registration—Main Lobby (H) Science Educators’ Workshop—Meeting Room 6 (H) Albert Nerken Award Lecture, S. Tougaard, Univ. of Southern Denmark—20 (CC) Plenary Lecture, Joel E. Kostka, Georgia Institute of Technology, “The BP Oil Spill in the Gulf of Mexico: Are Microbes Helping to Clean up the Mess?”—Ballroom B (CC) Science Educators’ Workshop Lunch—Meeting Room 7 (H) 2013 AVS Program Committee Meeting and Lunch—Florida Ballroom VI (H) Professional Development Seminar: JVST Writer’s Workshop—Florida Ballroom V (H) Biomaterial Interfaces Division Business Meeting—23 (CC) Electronic Materials and Processing Division Forum: Careers at LAM Research Reception—9 (CC) Welcome Mixer—Riverwalk (CC) Applied Surface Science Division Executive Committee Dinner—Meeting Room 5 (H) Professional Development Seminar: Federal Funding & Research Opportunities Town Hall—Florida V (H) Publications Committee Meeting and Dinner—TBD (Offsite) Thin Film Division Award Presentation—Meeting Room 1 (H)
CC = Tampa Convention Center H = Tampa MarriotWaterside Hotel & Marina
MONDAY SHORT COURSES 8:30 a.m. 8:30 a.m. 8:30 a.m. 8:30 a.m. 8:30 a.m.
Fundamentals of Vacuum Technology X-ray Photoelectron Spectroscopy (XPS or ESCA) & Auger Electron Spectroscopy (AES) A Comprehensive Course on Surface Analysis and Depth Profiling by X-Ray Photoelectron Spectroscopy (XPS or ESCA), Auger Electron Spectroscopy (AES), Focused Ion Beam Analysis (FIB) and Secondary Ion Mass Spectroscopy (SIMS) Chemical Mechanical Planarization for Microelectronics Manufacturing Industrial Ion Sources
LOCATION: COURSE HOURS:
All AVS Short Courses will be held at – Tampa Convention Center All AVS Short Course Hours: 8:30 a.m. – 5:00 p.m. – with 1.5 hour break for Lunch (Lunch not included)
80
NOTES
81
Monday Morning, October 29, 2012 Actinides and Rare Earths Focus Topic Room: 6 - Session AC+MI+SS+TF-MoM Electronic Structure and Spectroscopy of Actinides
Applied Surface Science Room: 20 - Session AS-MoM Quantitative Surface Chemical Analysis, Technique Development, and Data Interpretation - Part 1
Moderator: A.J. Nelson, Lawrence Livermore National Laboratory
Moderators: J.A. Ohlhausen, Sandia National Laboratories, S. Suzer, Bilkent University, Turkey
AC+MI+SS+TF-MoM1 Invited
AS-MoM1 Invited
8:40 am
Invited talk continued.
Invited talk continued.
9:00 am
AC+MI+SS+TF-MoM3 Invited AS-MoM3 Simulation of Electron Spectra for Surface Analysis (SESSA): Strong Correlations and the Electronic Structure of the Actinide Dioxides, (Hard) X-ray Photoelectron Spectra of Nanostructured Surfaces, W.S.M.
8:20 am
9:20 am
Electron Correlation and Magnetic Effects in the Actinides and Rare Earths, P.A. SÖDERLIND, Lawrence Livermore National Laboratory
2012 AVS Albert Nerken Award Lecture: Characterization of Thin-Film Nano-Structures by XPS, S. TOUGAARD*, University of Southern Denmark
R.L. MARTIN, Los Alamos National Laboratory
WERNER, W. SMEKAL, Vienna University of Technology, Austria, C.J. POWELL, National Institute of Standards and Technology
Invited talk continued.
AS-MoM4 XPS Characterisation of InP Features Etched in Cl2-Ar and Cl2H2 Inductively Coupled Plasmas, C. CARDINAUD, CNRS, France, R. CHANSON, CNRS-IMN, France, S. BOUCHOULE, CNRS-LPN, France, A. RHALLABI, M.-C. FERNANDEZ, Université de Nantes, France
9:40 am
AC+MI+SS+TF-MoM5 Invited
Synchrotron Radiation Studies of Actinide Compounds, S.M. BUTORIN,
AS-MoM5 Simplified Extrinsic Background for XPS Data Fitting, A. HERRERA-GOMEZ, UAM-Azcapotzalco and CINVESTAV-Queretaro, Mexico
Uppsala University, Sweden
10:00 am
Invited talk continued.
AS-MoM6 Effective Attenuation Lengths for Photoelectrons in Thin Films of Silicon Oxynitride and Hafnium Oxynitride on Silicon, C.J. POWELL, National Institute of Standards and Technology, W.S.M. WERNER, W. SMEKAL, G. TASNEEM, Vienna University of Technology, Austria
10:20 am
BREAK
BREAK
10:40 am
AC+MI+SS+TF-MoM8
Quasiparticle Dynamics in Uranium Systems from Ultrafast Spectroscopies, T. DURAKIEWICZ, Los Alamos National Laboratory
AS-MoM8 Invited
Valence Band XPS: A Valuable, but Underexploited, Tool for the Identification of Subtle Differences in Surface Chemistry, P.M.A. SHERWOOD, Oklahoma State University
11:00 am
Comparison of Spectroscopic Data with Cluster Calculations of Plutonium, Plutonium Dioxide and Uranium Dioxide, J.G.
AC+MI+SS+TF-MoM9
Invited talk continued.
TOBIN, S.W. YU, B.W. CHUNG, Lawrence Livermore National Laboratory, M.V. RYZHKOV, Russian Academy of Science-Ekaterinburg, A. MIRMELSTEIN, Russian Federation Nuclear Center-Snezhinsk 11:20 am
Multitechnique Electron Spectroscopic Characterisation of Optoelectronic Devices, A.E. WRIGHT, P. MACK, R.G. WHITE, A. BUSHELL, Thermo AS-MoM10
Fisher Scientific, UK
11:40 am
Chemically Resolved Electrical Characterisation of Working Devices by XPS, S. SUZER, Bilkent University, Turkey AS-MoM11
82 * Albert Nerken Award Winner
Monday Morning, October 29, 2012 Spectroscopic Ellipsometry Focus Topic Room: 19 - Session EL+TF+AS+EM+SS+PS+EN+NM-MoM Spectroscopic Ellipsometry for Photovoltaics and Semiconductor Manufacturing
Biomaterial Interfaces Room: 23 - Session BI-MoM Surfaces to Control Cell Response
Moderators: M. Creatore, Eindhoven University of Technology, the Netherlands, H. Wormeester, MESA+ Institute for Nanotechnology, Univeristy of Twente, The Netherlands
Moderator: A. Rosenhahn, Karlsruhe Institute of Technology, Germany 8:20 am
Click Chemistry on Brominated Plasma Polymer Thin Films for Immobilizing and Patterning Biomolecules and Cells, B.W. MUIR, CSIRO
BI-MoM1
EL+TF+AS+EM+SS+PS+EN+NM-MoM1 Invited
Multichannel Spectroscopic Ellipsometry: Applications in I-III-VI2 Thin Film Photovoltaics, R.W. COLLINS, D. ATTYGALLE, P. ARYAL, P. PRADHAN, N.J.
Materials Science and Engineering, Australia, R. CHEN, CSIRO Materials Science and Engineering and The University of Melbourne, Australia, G.K. SUCH, The University of Melbourne, Australia, A. POSTMA, R.A. EVANS, K.M. MCLEAN, CSIRO Materials Science and Engineering, Australia, F. CARUSO, The University of Melbourne, Australia 8:40 am
PODRAZA, University of Toledo, V. RANJAN, S. MARSILLAC, Old Dominion University
BI-MoM2 Temperature-Induced Electrostatic Assembly of Poly (Ethylene Glycol) Co-Polymer for Non-Fouling Biomedical Applications: How Low Can You Go?, R. OGAKI, O. ZOFFMANN ANDERSEN, K. KOLIND, D.C.E. KRAFT, M.
Invited talk continued.
FOSS, Aarhus University, Denmark
9:00 am
9:20 am
BI-MoM3 Invited EL+TF+AS+EM+SS+PS+EN+NM-MoM3 Contribution of Plasma Generated Spatially and Temporally Coordinated Processes of Cells at Molecular to Nanoparticles to the Growth of Microcrystalline Silicon Deposited from Cellular Scales, J.P. SPATZ, Max Planck Institute for Intelligent Systems & University of SiF4/H2/Argon Gas Mixtures, J.-C. DORNSTETTER, S. KASOUIT, J.-F. BESNIER, Heidelberg, Germany
Total S.a, France, P. ROCA I CABARROCAS, LPICM-CNRS, Ecole Polytechnique, France
Invited talk continued.
EL+TF+AS+EM+SS+PS+EN+NM-MoM4 Multichannel Spectroscopic Ellipsometry for CdTe Photovoltaics: from Materials and Interfaces to Full-Scale Modules, P. KOIRALA, J. CHEN, X. TAN, N.J. PODRAZA, The University of Toledo, S. MARSILLAC, Old Dominion University, R.W. COLLINS, The University of Toledo
9:40 am
Chemically Defined Synthetic Surfaces for Mesenchymal Stem Cell Expansion, L. MEAGHER, H. THISSEN, P. PASIC, R.A. EVANS, S. PEREIRA, K.
EL+TF+AS+EM+SS+PS+EN+NM-MoM5 Determination of Electronic Band Gaps from Optical Spectra, R.A. SYNOWICKI, J.A. Woollam Co., Inc.
BI-MoM5
TSANG, V. GLATTAUER, K. STYAN, C.L. BE, D. HAYLOCK, CSIRO Materials Science and Engineering, Australia
10:00 am
BI-MoM6 Binary Colloidal Crystal Structures Combined with Chemical Surface Modification to Achieve Superior Control Over Biointerfacial Interactions, P. KOEGLER, Swinburne Univ. of Tech., Australia, P. PASIC, J.
Optical Modeling of Plasma-Deposited ZnO: Extended Drude and its Physical Interpretation, H.C.M. KNOOPS, M.V. EL+TF+AS+EM+SS+PS+EN+NM-MoM6
PONOMAREV, J.W. WEBER, N. LEICK, B.W.H. VAN DE LOO, Y.G. MELESE, W.M.M. KESSELS, M. CREATORE, Eindhoven University of Technology, the Netherlands
GARDINER, V. GLATTAUER, CSIRO Materials Science and Eng., Australia, A. CLAYTON, Swinburne Univ. of Tech., Australia, H. THISSEN, CSIRO Materials Science and Eng., Australia, P. KINGSHOTT, Swinburne Univ. of Tech., Australia 10:20 am
10:40 am
11:00 am
BREAK
BREAK
BI-MoM8 Invited
EL+TF+AS+EM+SS+PS+EN+NM-MoM8 The Ellipsometric Response of SingleCrystal Silicon to Doping, H.G. TOMPKINS, Consultant
Invited talk continued.
EL+TF+AS+EM+SS+PS+EN+NM-MoM9 The Effect of Stress on the Optical Properties Semiconductor Films, A.C. DIEBOLD, G.R. MUTHINTI, M.
Capturing Cell-Cell Communication on Micro-/Nano-Engineered Surfaces, L.C. KAM, Columbia University
MEDIKONDA, T.N. ADAM, College of Nanoscale Science and Engineering, University at Albany, A. REZNICEK, B. DORIS, IBM Research at Albany Nanotech 11:20 am
BI-MoM10 Influence of Ca2+ Binding to Titania on Platelet Activation Profiles, S. GUPTA, I. REVIAKINE, CIC biomaGUNE, Spain
11:40 am
BI-MoM11
Numerical Ellipsometry: Spectroscopic n-k Plane Analysis of Thin Films Growing on Unknown Layered Substrates, F.K. URBAN, D. BARTON, Florida International University
EL+TF+AS+EM+SS+PS+EN+NM-MoM10
Enhancing the Osseointegration of Titanium Dental Implants by Magnetron-Sputtered Strontium Containing Coatings, O.Z. ANDERSEN,
Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Denmark, V. OFFERMANNS, Medizinische Universität Innsbruck, Universitätsklinik für Mund-, Kiefer- und Gesichtschirurgie, Austria, M. SILLASSEN, Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Denmark, D.C.E. KRAFT, Aarhus School of Dentistry, Denmark, J. BØTTIGER, F. BESENBACHER, Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Denmark, F. KLOSS, Medizinische Universität Innsbruck, Universitätsklinik für Mund-, Kiefer- und Gesichtschirurgie, Austria, M. FOSS, Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Denmark
83
Monday Morning, October 29, 2012 Electronic Materials and Processing Room: 9 - Session EM+TF+OX+GR-MoM
Energy Frontiers Focus Topic Room: 15 - Session EN+NS-MoM
High-k Dielectrics for MOSFETs I
Nanostructured Solar Cells
Moderator: A.C. Kummel, University of California San Diego 8:20 am
8:40 am
Moderator: M.S. Arnold, University of Wisconsin Madison
EM+TF+OX+GR-MoM1 Invited EN+NS-MoM1 Doping Control for the Development of Silicon Quantum Dot Surface Preparation and Dielectric Growth for Graphene-based Devices, Solar Cell, K.J. KIM, J.H. PARK, Korea Research Institute of Standards and Science R.M. WALLACE, University of Texas at Dallas
(KRISS), Republic of Korea, H.-J. BAEK, H.H. HWANG, University of Science and Technology (UST), Republic of Korea, J.S. JANG, Chungbuk National University (CBNU), Republic of Korea
Invited talk continued.
EN+NS-MoM2 Photocarrier Generation in Si Quantum-dot Sensitized Solar Cells, G. UCHIDA, H. SEO, Y. WANG, K. KAMATAKI, N. ITAGAKI, K. KOGA, M. SHIRATANI, Kyushu University, Japan
9:00 am
EM+TF+OX+GR-MoM3 Invited
EN+NS-MoM3 Invited
OKTYABRSKY, A. GREENE, S. MADISETTI, P. NAGAIAH, M. YAKIMOV, R. MOORE, S. NOVAK, H. BAKHRU, V. TOKRANOV, University at Albany-SUNY
O.E. SEMONIN, National Renewable Energy Laboratory
9:20 am
Invited talk continued.
Invited talk continued.
9:40 am
EM+TF+OX+GR-MoM5 Interface Study of the Atomic Layer Deposited Al2O3 on Al0.25Ga0.75N, X. QIN, B. BRENNAN, H. DONG, R.M. WALLACE, The University of
EN+NS-MoM5
Texas at Dallas
CHOI, W.N. WENGER, R.S. HOFFMAN, Cornell University
Ideal Monolayer Nitridation of Semiconductors using a Nitrogen Radical Generator, A.T. LUCERO, J. KIM, University of Texas at Dallas
EN+NS-MoM6 Improvement of Carrier Transport in PbSe Quantum DotEmbedded Polymeric Solar Cells Fabricated by a Laser Assisted Spray Process, C. HETTIARACHCHI, D.M. FELICIANO, D. MUKHERJEE, P. MUKHERJEE, S.
10:00 am
Antimonide-Based P-Channel MOSFET: Progress and Challenges, S.
EM+TF+OX+GR-MoM6
Quantum Dot Solar Cells with External Quantum Efficiency Exceeding 100% by Multiple Exciton Generation, J.M. LUTHER, M.C. BEARD, A.J. NOZIK,
Quantum-Confined Nanocrystals as Building Blocks for Low-Cost Solution-Processed Multi-Junction Solar Cells, T. HANRATH, J.W.
WITANACHCHI, University of South Florida
10:20 am
BREAK
BREAK
10:40 am
EM+TF+OX+GR-MoM8 The Chemical Reaction of TiO2 Thin Film in EN+NS-MoM8 Invited N2/CF4/Ar Plasmas, K.R. CHOI, J.C. WOO, Y.H. JOO, L. CHEN, H.S. KIM, Y.S. CHUN, Single and Multiple Exciton Dissociation in Colloidal C.I. KIM, Chung-Ang University, Republic of Korea Nanoheterostructures, T. LIAN, Emory University
11:00 am
EM+TF+OX+GR-MoM9 Characterization of ALD Laminated Gate Dielectrics on GaN MOSCAPs, D. WEI, T. HOSSAIN, Kansas State University, N. NEPAL, N.Y.
Invited talk continued.
GARCES, Naval Research Laboratory, H.M. MEYER III, Oak Ridge National Laboratory, C.R. EDDY, JR., Naval Research Laboratory, J.H. EDGAR, Kansas State University
11:20 am
EM+TF+OX+GR-MoM10 Invited EN+NS-MoM10 Temperature Dependent Characterization of InAs Quantum Passivation of Interfacial Defects in GaAs and Other III-Vs, J. ROBERTSON, Dots Imbedded in GaAs Superlattice Solar Cell Structures by High Cambridge University, UK Resolution X-ray Diffraction, J. SHENG, University of New Mexico, D. CHAPMAN, D. WILT, Air Force Research Laboratory, S. POLLY, C. BAILEY, C. KERESTES, S. HUBBARD, Rochester Institute of Technology, S.M. HAN, University of New Mexico
11:40 am
Invited talk continued.
EN+NS-MoM11 Intermediate Band Upconversion for Low-Cost, Solution Processed Photovoltaics, J. LEWIS, E.J.D. KLEM, C.W. GREGORY, G.B. CUNNINGHAM, S. HALL, D.S. TEMPLE, RTI International
84
Monday Morning, October 29, 2012
8:20 am
Graphene and Related Materials Focus Topic Room: 13 - Session GR+EM+NS+PS+SS+TF-MoM
MEMS and NEMS Room: 10 - Session MN+AS-MoM
Graphene Growth
Characterization of Surfaces and Interfaces in MEMS and NEMS
Moderators: M. Spencer, Cornell University, V.D. Wheeler, U.S. Naval Research Laboratory GR+EM+NS+PS+SS+TF-MoM1 Synthesis Ingredients Enabling Low Noise Epitaxial Graphene Applications, D.K. GASKILL, L.O. NYAKITI, V.D. WHEELER,
Moderator: A.V. Sumant, Argonne National Laboratory MN+AS-MoM1 Invited
Probing Dynamical Surface and Interfacial Effects in High-Speed Nanoelectromechanical Systems (NEMS), X.-L. FENG, Case Western Reserve
U.S. Naval Research Lab, A. NATH, George Mason Univ., V.K. NAGAREDDY, Newcastle University, UK, R.L. MYERS-WARD, N.Y. GARCES, S.C. HERNÁNDEZ, S.G. WALTON, U.S. Naval Research Lab, M.V. RAO, George Mason Univ., A.B. HORSFALL, Newcastle Univ., UK, C.R. EDDY, JR., U.S. Naval Research Lab, J.S. MOON, HRL Labs LLC 8:40 am
University
GR+EM+NS+PS+SS+TF-MoM2 Growth of Graphene by Catalytic Decomposition of Ethylene on Cu(100) and Cu(111) With and Without Oxygen Predosing, Z.R. ROBINSON, P. TYAGI, T. MOWLL, C.A. VENTRICE, JR.,
Invited talk continued.
University at Albany- SUNY, K. CLARK, A.-P. LI, Oak Ridge National Laboratory
9:00 am
9:20 am
GR+EM+NS+PS+SS+TF-MoM3 Impact of Growth Parameters on Uniformity of Epitaxial Graphene, L.O. NYAKITI, V.D. WHEELER, R.L. MYERS-WARD, J.C.
MN+AS-MoM3
CULBERTSON, U.S. Naval Research Laboratory, A. NATH, George Mason University, N.Y. GARCES, U.S. Naval Research Laboratory, J. HOWE, Oak Ridge National Laboratory, C.R. EDDY, JR., D.K. GASKILL, U.S. Naval Research Laboratory
Laboratory, K.J. PÉREZ QUINTERO, University of Puerto Rico, D.A. CZAPLEWSKI, Argonne National Laboratory
GR+EM+NS+PS+SS+TF-MoM4 Uniform Epitaxial Growth of Charge Neutral Quasi-Free-Standing Monolayer Graphene on a 6H-SiC(0001) Surface by Combination of Metal Silicidation and Intercalation, H. SHIN, I. SONG, C.-
MN+AS-MoM4 Carbon Nanotube Templated MEMS: Three Dimensional Microstructures in Semiconductors, Ceramics, and Metals, R.C. DAVIS, L. BARRETT, R. HANSEN, A. KONNEKER, D.D. ALLRED, B.D. JENSEN, R. VANFLEET, Brigham Young University
Y. PARK, J.R. AHN, Sungkyunkwan University, Republic of Korea
9:40 am
10:00 am
Fabrication of Nanomechanical Switch Based on Ultrananocrystalline Diamond Nanowire, A.V. SUMANT, Argonne National
GR+EM+NS+PS+SS+TF-MoM5 Invited
MN+AS-MoM5 Filling through Silicon vias with a Carbon Nanotube/Copper Matrix, M.B. JORDAN, M. RAO, The University of Alabama, A.V. SUMANT, R.S. DIVAN, Argonne National Laboratory, S.L. BURKETT, The University of Alabama
Invited talk continued.
MN+AS-MoM6 Optimization of STiGer Process used to Etch High Aspect Ratio Silicon Microstructures, T. TILLOCHER, P. LEFAUCHEUX, GREMI
Epitaxial Graphene on Ir(111) - A Playground for the Fabrication of Graphene Hybrid Materials, T.W. MICHELY, Universität zu Köln, Germany
CNRS/Université d'Orléans, France, J. LADROUE, M. BOUFNICHEL, ST Microelectronics, Tours, France, P. RANSON, R. DUSSART, GREMI CNRS/Université d'Orléans, France
10:20 am
10:40 am
11:00 am
BREAK
BREAK
GR+EM+NS+PS+SS+TF-MoM8 Invited
MN+AS-MoM8
Watson Research Center
Samsung Electronics Co. Ltd., Republic of Korea, J.-B. MOON, Korea Institute of Machinery and Materials, Republic of Korea, S.-H. CHOI, J.-S. HONG, Lam Research Corp, K.-S. SHIN, Y.-G. SHIN, H.-G. KANG, Samsung Electronics Co. Ltd., Republic of Korea
Invited talk continued.
MN+AS-MoM9
Mechanical Analysis on the Plasma Induced Deformation in Line Patterns Based on Real Profile Images, S.-W. PARK, K.-H. BAEK,
Graphene Growth Studied with LEEM, PEEM, EELS, ARPES, MEIS, and STM, R.M. TROMP, J.B. HANNON, M.W. COPEL, S.-H. JI, F.M. ROSS, IBM T.J.
The Effect of Back-action Force for the Electron Tunneling Transduction in MEMS Measurement, M.R. KAN, University of Alberta, Canada, Z.
DIAO, National Institute for Nanotechnology, NRC Canada, V.T.K. SAUER, M.R. FREEMAN, University of Alberta, Canada, W.K. HIEBERT, National Institute for Nanotechnology, NRC Canada 11:20 am
11:40 am
GR+EM+NS+PS+SS+TF-MoM10 Spatial Confinement of Epitaxy of Graphene on Microfabricated SiC to Suppress Thickness Variation, H. FUKIDOME, T.
MN+AS-MoM10 Electric-Stimulus-Responsive Pluronic Hydrogels as Actuators, L. ENGEL, I. SOKOLOV, O. BERKH, Tel Aviv University, Israel, K.
IDE, H. HANDA, RIEC, Tohoku Univ., Japan, Y. KAWAI, Tohoku Univ., Japan, F. FROMM, Univ. Erlange-Nürnberg, Germany, M. KOTSUGI, T. OHKOUCHI, JASRI/SPring-8, Japan, H. MIYASHITA, Tohoku Univ., Japan, Y. ENTA, Hirosaki Univ., Japan, T. KINOSHITA, JASRI/SPring-8, Japan, TH. SEYLLER, Univ. Erlange-Nürnberg, Germany, M. SUEMITSU, RIEC, Tohoku Univ., Japan
ADESANYA, E. VANDERLEYDEN, P. DUBRUEL, Ghent University, Belgium, J. SHKLOVSKY, I. HARARI, Y. SHACHAM-DIAMAND, S. KRYLOV, Tel Aviv University, Israel
GR+EM+NS+PS+SS+TF-MoM11 Three-Dimensional Graphene Architecture Growth and Its Facile Transfer to Three-Dimensional Substrates, J.-H.
MN+AS-MoM11 CMOS MEMS Metal-based Tactile Sensors Development, Y.C. LIN, C.J. HSIEH, L.B. WANG, J.C. LIOU, W.-C. TIAN, National Taiwan University, Taiwan, Republic of China
PARK, Sungkyunkwan University, Republic of Korea, H.-J. SHIN, J.Y. CHOI, Samsung Advanced Institute of Technology, Republic of Korea, J.R. AHN, Sungkyunkwan University, Republic of Korea
85
Monday Morning, October 29, 2012 Nanomanufacturing Science and Technology Focus Topic Room: 16 - Session NM+AS+MS-MoM
Nanometer-scale Science and Technology Room: 12 - Session NS-MoM
Metrology and Environmental Issues in Nanomanufacturing
Nanoparticles and Quantum Structures
Moderators: N.A. Burnham, Worcester Polytechnic Institute, L.J. Gamble, University of Washington 8:20 am
Moderator: G.S. Herman, Oregon State University
NM+AS+MS-MoM1 Invited
Nanomanufacturing – Beyond Silicon, J.A. LIDDLE, National Institute of Standards and Technology
8:40 am
NS-MoM2 Synthesis of Visible Light Emitting Self-assembled Ge Nanocrystals Embedded within a SiO2 Matrix and Post-annealing Effects, A. HERNÁNDEZ-HERNÁNDEZ, F. DE MOURE-FLORES, J.G. QUIÑONES-
Invited talk continued.
GALVÁN, CINVESTAV-IPN, Mexico, L.A. HERNÁNDEZ-HERNÁNDEZ, ESFM-IPN, Mexico, J. SANTOYO-SALAZAR, M. MELÉNDEZ-LIRA, CINVESTAV-IPN, Mexico 9:00 am
NM+AS+MS-MoM3 Use of Mueller Matrix – Spectroscopic Ellipsometry for Scatterometry based Measurement of Critical Dimensions during Semiconductor Manufacturing, G.R. MUTHINTI, A.C. DIEBOLD, University at
NS-MoM3 Invited
A Single Atom Transistor, M.Y. SIMMONS, University of New South Wales, Australia
Albany-SUNY, B. PETERSON, Nanometrics Inc.
9:20 am
NM+AS+MS-MoM4 Atomic Layer Deposition Monitored and Characterized by Joint In Situ Real-Time Spectroscopic Ellipsometry and Direct Surface Analysis, M. JUNIGE, M. GEIDEL, M. KNAUT, M. ALBERT, J.W. BARTHA,
Invited talk continued.
Technische Universität Dresden, Germany
NM+AS+MS-MoM5 Invited
NS-MoM5 Transforming Luminiscent Silicon Nanocrystals Into a DirectBandgap Semiconductor via Surface-Capping-Induced Strain, P. HAPALA,
J. SIMMONS, J. LIU, Duke University, W. BAUGHMAN, University of Alabama, J. FOREMAN, H.O. EVERITT, U.S. Army Aviation and Missile Research Development and Engineering Center
P. JELINEK, K. KUSOVA, I. PELANT, Institute of Physics of ASCR, Czech Republic
10:00 am
Invited talk continued.
NS-MoM6 Plasma Synthesis and Hydrosilylation of Silicon Nanoparticles, S.L. WEEKS, S. AGARWAL, Colorado School of Mines, B. MACCO, Eindhoven University of Technology, the Netherlands
10:20 am
BREAK
BREAK
10:40 am
NM+AS+MS-MoM8 Invited NS-MoM8 Exchange Bias in Pure and Core/Shell Structured γ-Fe2O3Transformation of Engineered Nanomaterials in the Environment: Effects based Nanoparticles, P. LAMPEN, H. KHURSHID, M.H. PHAN, H. SRIKANTH, University of South Florida of Size, Shape and Morphology on Nanomaterial Toxicity, S. OBARE,
9:40 am
Highly Efficient Defect Emission from ZnO:Zn and ZnO:S Nanoparticles,
Western Michigan University
11:00 am
NS-MoM9 Magnetic Polymer Nanocomposites with Tunable Microwave and RF Properties, K. STOJAK, S. CHANDRA, H. KHURSHID, S. PAL, C. MORALES,
Invited talk continued.
J. DEWDNEY, J. WANG, T. WELLER, M.H. PHAN, H. SRIKANTH, University of South Florida
11:20 am
NM+AS+MS-MoM10 Invited
An Integrated Approach Toward Understanding the Environmental Fate, Transport, Toxicity and Occupational Health Hazards of Nanomaterials,
Factors Controlling Thermodynamic Properties at the Nanoscale: Ab Initio Study of Pt Nanoparticles, G. SHAFAI, M. ALCANTARA NS-MoM10
ORTIGOZA, T.S. RAHMAN, University of Central Florida
V. GRASSIAN, University of Iowa
11:40 am
Invited talk continued.
NS-MoM11 Fabrication of Fe Doped Nano-engineered Matrix for Cholesterol Biosensor, R.R. PANDEY, C. KANT, CSIR-National Physical Laboratory, National Physical Laboratory, India, M. DHAYAL, CSIR Centre for Cellular and Molecular Biology (CCMB), India, K.K. SAINI, CSIR-National Physical Laboratory, National Physical Laboratory, India
86
Monday Morning, October 29, 2012 Oxide Heterostructures-Interface Form & Function Focus Topic Room: 7 - Session OX+EM+MI+NS+TF-MoM Structure–Property Relationships in Epitaxial Oxide Interfaces 8:20 am
8:40 am
Plasma Science and Technology Room: 24 - Session PS+EM-MoM Atmospheric Plasma Processing and Micro Plasmas Moderator: S.G. Walton, Naval Research Laboratory
Moderator: E.I. Altman, Yale University OX+EM+MI+NS+TF-MoM1 Role of Dual-laser Ablation in Controlling Mn Oxide Precipitation during the Epitaxial Growth of Mn Doped ZnO Thin Films with Higher Doping Concentrations, D. MUKHERJEE, M. HORDAGODA,
PS+EM-MoM1 Invited
Plasma Science and Applications in the Spatial Realm Below 1 mm: Recent Advances in Microcavity/Microchannel Plasmas, J.G. EDEN,
R.H. HYDE, N. BINGHAM, H. SRIKANTH, P. MUKHERJEE, S. WITANACHCHI, University of South Florida
University of Illinois at Urbana Champaign
OX+EM+MI+NS+TF-MoM2 Structural Characterization of Heterojunction nZnO/p-NiO Thin Films Epitaxially Deposited on (0002)Al2O3 Substrates,
Invited talk continued.
Y.H. KWON, Sungkyunkwan University, Republic of Korea, J.H. LEE, KAIST, Republic of Korea, S.H. CHUN, Sungkyunkwan University, Republic of Korea, J.Y. LEE, KAIST, Republic of Korea, H.K. CHO, Sungkyunkwan University, Republic of Korea 9:00 am
9:20 am
OX+EM+MI+NS+TF-MoM3 Invited PS+EM-MoM3 Development and Limitations of Microplasma Arrays on Manipulating the Electrostatic Boundary Conditions of Polar Interfaces, Y. Silicon Operating in DC, R. DUSSART, M. KULSRESHATH, L. SCHWAEDERLE, V. HIKITA, SLAC National Accelerator Laboratory
FELIX, P. LEFAUCHEUX, O. AUBRY, T. TILLOCHER, S. SOZIAS, GREMI - Polytech Orleans/CNRS, France, L.J. OVERZET, University of Texas at Dallas
Invited talk continued.
PS+EM-MoM4 A Foldable Microplasma-Generation Device on a Paper Substrate Operating under Atmospheric Pressure, Y.J. YANG, J.H. TSAI, Y.C. LIAO, Y.W. LU, C.C. HSU, National Taiwan University, Taiwan, Republic of China
9:40 am
OX+EM+MI+NS+TF-MoM5 Invited
PS+EM-MoM5 Invited
10:00 am
Invited talk continued.
Invited talk continued.
10:20 am
BREAK
BREAK
OX+EM+MI+NS+TF-MoM8 Invited
PS+EM-MoM8
10:40 am
11:00 am
Nanoscale Coupling Across Oxide-Semiconductor Interfaces: Ab Initio Insights, S. ISMAIL-BEIGI, Yale University
Spectroscopic Imaging of Oxide Interfaces by Aberration Corrected Electron Microscopy, L.F. KOURKOUTIS, D.A. MULLER, Cornell University
Invited talk continued.
Cold Atmospheric Microplasma Arrays for Processing of Flexible Materials, J. HOPWOOD, A. HOSKINSON, C. WU, N. MIURA, Tufts University
Nucleation of Nanodiamond Clusters at Ambient Pressure via Microplasma Synthesis, A. KUMAR, P.A. LIN, A. XUE, R.M. SANKARAN, Case Western Reserve University
PS+EM-MoM9 Atmospheric Pressure Plasma Effects on the Adhesive Bonding Properties of Stainless Steel and Epoxy Composites, T.S. WILLIAMS, H. YU, P. YEH, J. YANG, R.F. HICKS, University of California, Los Angeles
11:20 am
OX+EM+MI+NS+TF-MoM10 Strain-induced Oxygen Vacancy Ordering at SrTiO3/La0.5Sr0.5CoO3 Interfaces, and its Impact on Magnetic “Dead” Layers, S. BOSE, M. SHARMA, M. TORIJA, University of Minnesota, J. GAZQUEZ, M.
Numerical Simulation of Gas Heating in a Capacitively Coupled Microcell Plasma at Atmospheric Pressure, T. YAGISAWA, T.
PS+EM-MoM10
MAKABE, Keio University, Japan
VARELA, Oak Ridge National Laboratory, J. SCHMITT, C. HE, University of Minnesota, S. EL-KHATIB, American University of Sharjah, United Arab Emirates, M. LAVER, J. BORCHERS, NIST Center for Neutron Research, C. LEIGHTON, University of Minnesota 11:40 am
OX+EM+MI+NS+TF-MoM11 Fabrication and Characterization of Titanium Oxide Films with Tunable Stiffness, K. GOTLIB-VAINSHTEIN, O. GIRSHEVITZ,
PS+EM-MoM11
Reactions at the Interface of Plasmas and Aqueous Electrodes: Identifying the Role of Electrons, M. WITZKE, Case Western
C.N. SUKENIK, Bar Ilan University, Israel, D. BARLAM, Ben Gurion University, Israel, E. KALFON-COHEN, S.R. COHEN, Weizmann Institute of Science, Israel
Reserve University, P. RUMBACH, D.B. GO, University of Notre Dame, R.M. SANKARAN, Case Western Reserve University
87
Monday Morning, October 29, 2012 Plasma Science and Technology Room: 25 - Session PS-MoM
Advanced Surface Engineering Room: 22 - Session SE+NS-MoM
Advanced FEOL/Gate Etching 1
Nanostructured Thin Films and Coatings I: Interface Aspects
Moderator: L. Diao, Mattson Technology 8:20 am
Moderator: J. Patscheider, EMPA, Switzerland
Selective Etching of Spacer with Pulsing in Inductively Coupled Plasmas for FinFET Devices, B. ZHOU, M. TITUS, P. FRIDDLE, M. ROBSON, G.
PS-MoM1
UPADHYAYA, G. KAMARTHY, Lam Research Corp, S. KANAKASABAPATHY, E. FRANKE, IBM Corp 8:40 am
9:00 am
PS-MoM2 Evaluation of Novel Spacer Etch Processes using a New Gas, S. ENGELMANN, E.A. JOSEPH, N.C.M. FULLER, W.S. GRAHAM, E.M. SIKORSKI, IBM T.J. Watson Research Center, M. NAKAMURA, G. MATSUURA, Zeon Chemicals L.P., H. MATSUMOTO, A. ITOU, T. SUZUKI, Zeon Corporation
SE+NS-MoM2 Ion-guided Phase Separation of Carbon-Nickel Composite Films during Ion Beam Assisted Deposition: 3D Sculpting at the Nanoscale, G. ABRASONIS, Helmholtz-Zentrum Dresden-Rossendorf, Germany, M. KRAUSE, Helmholtz-Zentrum Dresden-Rossendorf and Technische Universität Dresden, Germany, T.W.H. OATES, Leibniz-Institut für Analytische Wissenschaft, Germany, A. MÜCKLICH, S. FACSKO, Helmholtz-Zentrum Dresden-Rossendorf, Germany, C. BAEHTZ, A. SHALIMOV, Helmholtz-Zentrum Dresden-Rossendorf, Germany and European Synchrotron Radiation Facility, France, S. GEMMING, Helmholtz-Zentrum DresdenRossendorf, Germany
PS-MoM3 Invited
SE+NS-MoM3 Invited
CHANG, University of California, Los Angeles
RAFAJA, Freiberg University of Technology, Germany
9:20 am
Invited talk continued.
Invited talk continued.
9:40 am
PS-MoM5 High Selective Etching of SiN Based Material Over Si and SiO2 SE+NS-MoM5 Mechanical Properties, Fracture Toughness, and Thermal using Evanescent Microwave Plasma for FINFET Spacer Applications, A. Stability of CrN/AlN Superlattice and Multilayer Thin Films, M. SCHLÖGL, B.
Anisotropic and Selective Etching of Novel Multifunctional Materials, J.P.
Interface Phenomena in Nanostructured Thin Films and Coatings, D.
RALEY, A. RANJAN, H. KINTAKA, B. MESSER, T. MORI, K. KUMAR, P. BIOLSI, Tokyo Electron Technology Center, America, LLC, A. INADA, Renesas Electronics, R. JUNG, S. KANAKASABAPATHY, International Business Machines – Research Group
MAYER, J. PAULITSCH, J. KECKES, C. KIRCHLECHNER, P.H. MAYRHOFER, Montanuniversität Leoben, Austria
PS-MoM6 Highly Selective and Controllable Si3N4 Etching to Si and SiO2 for sub-22-nm Gate Spacer using CF3 Neutral Beam with O2 and H2, D. NAKAYAMA, A. WADA, T. KUBOTA, Tohoku University, Japan, M. HAASS, R.L. BRUCE, R.M. MARTIN, N.C.M. FULLER, IBM TJ Watson Research Center, S. SAMUKAWA, Tohoku University, Japan
SE+NS-MoM6 High-temperature Nanoindentation of Hard Coatings, M. REBELO DE FIGUEIREDO, University of California Berkeley, M. TKADLETZ, Materials Center Leoben, Austria, M. SCHLÖGL, R. HOLLERWEGER, P.H. MAYRHOFER, C. MITTERER, Montanuniversität Leoben, Austria, P. HOSEMANN, University of California Berkeley
10:20 am
BREAK
BREAK
10:40 am
PS-MoM8 Highly Selective Etching of Titanium Nitride Over Tantalum Nitride in Inductively Coupled Plasma, W. ZHU, H. SHIN, S. SRIDHAR, L. LIU,
SE+NS-MoM8 Improving the Phase Stability of Metastable Aluminum Oxide Thin Films, F. NAHIF, H. BOLVARDI, D. MUSIC, S. MRÁZ, J.M. SCHNEIDER,
V.M. DONNELLY, D.J. ECONOMOU, University of Houston, C. LENOX, T. LII, Texas Instruments
RWTH Aachen University, Germany
PS-MoM9 Pulsed Plasmas for SiN Etch Applications, R. DASAKA, IBM Semiconductor R&D Center, G. PADRON-WELLS, GLOBALFOUNDRIES, D. KIM, Lam Research, K. ONISHI, IBM Semiconductor R&D Center, M. ROBSON, A. CHARLES, G. UPADHYAYA, Lam Research, R. WISE, W. KOCON, IBM Semiconductor R&D Center
SE+NS-MoM9
10:00 am
11:00 am
11:20 am
Thermal Stability of (AlxCr1-x)2O3 Solid Solution Coatings Grown by Cathodic Arc Evaporation, V. EDLMAYR, M. POHLER, University of
Leoben, Austria, I. LETOFSKY-PAPST, Graz University of Technology, Austria, C. MITTERER, University of Leoben, Austria
PS-MoM10 Etching High-k Films in High Aspect Ratio Gate Structures SE+NS-MoM10 Protective Coatings Against Corrosion and Wear for 3D using BCl3/Ar and Cl2/CO Chemistries, S. AGARWAL, J. CHOI, A. KHAN, Applied Components with Combined ALD and PVD Techniques, S. EK, Picosun, Materials, Inc.
11:40 am
Finland
PS-MoM11 Time-modulated Plasma Etching for Next Generation Devices, S. SRIRAMAN, Y. WU, G. KAMARTHY, C. RUSU, J. HOLLAND, A. PATERSON, V. VAHEDI, Lam Research
88
Monday Morning, October 29, 2012
8:20 am
Surface Science Room: 21 - Session SS-MoM
Thin Film Room: 11 - Session TF-MoM
Nonequillibrium and Nonlinear Processes
ALD Enabled Applications
Moderators: D. Diesing, University of Duisburg-Essen, Germany, E. Karpov, University of Illinois at Chicago SS-MoM1 Hot Electron Flow Generated by Photon Absorption Probed with Metal-Semiconductor Nanodiodes, J.Y. PARK, Y.K. LEE, KAIST, Republic of
Moderator: W.M.M. Kessels, Eindhoven University of Technology, the Netherlands
Korea
8:40 am
The Nature of Charge Transfer at Metal-Liquid Interface: Equilibrium vs. Non Equilibrium Processes, D. BÜRSTEL, M. SCHEELE, I.
SS-MoM2
NEDRYGAILOV, D. DIESING, University of Duisburg-Essen, Germany
9:00 am
9:20 am
SS-MoM3 Probing Surface Chemical Reactions with Metal Nanofilm Semiconductor Schottky Diodes, I. NEDRYGAILOV, E. HASSELBRINK, D.
TF-MoM3 Atomic Layer Deposition Films as Diffusion Barriers for Silver Artifacts, A.E. MARQUARDT, University of Maryland, E. BREITUNG, E-Squared Art
DIESING, University of Duisburg-Essen, Germany
Conservation Science, G. GATES, T. DRAYMAN-WEISSER, The Walters Art Museum, G.W. RUBLOFF, R.J. PHANEUF, University of Maryland
SS-MoM4 Non-adiabatic Electronic Effects in Multiquanta Energy Transfer TF-MoM4 Quasi-ALD for Deposition of a Water Resistive Barrier Layer and Reactions at Metal Surfaces: Do We Need to Go Beyond the and Prevent Electronic Devices from Water Shock, V. GUPTA, M.R. Electronic Friction Picture?, D.J. AUERBACH, University of California, Santa Barbara, K. LINFORD, Brigham Young University GOLIBRZUCH, University of Göttingen, Germany, A. KANDRATSENKA, Max Planck Institute for Biophysical Chemistry, Germany, R. COOPER, C. BARTELS, University of Göttingen, Germany, I. RAHINOV, The Open University of Israel, A.M. WODTKE, University of Göttingen, Germany
9:40 am
SS-MoM5 Invited
TF-MoM5 Invited
Experimental Evidence of Non-adiabatic Effects in Gas-Surface Interactions, H. NIENHAUS, University of Duisburg-Essen, Germany
Atomic Layer Deposition for Astronomy and Space Applications, F. GREER, Jet Propulsion Laboratory/California Institute of Technology
10:00 am
Invited talk continued.
Invited talk continued.
10:20 am
BREAK
BREAK
Nonadiabatic Dynamics of Open-Shell Molecules at Surfaces, J.C. TULLY,
SS-MoM8 Invited
TF-MoM8 ALD-Enabled Pt/HfO2/Ti and Pt/TiO2/Ti Tunneling Diodes with Enhanced Tunneling Characteristic, O. AJAYI, G. MUMCU, J. WANG, University of
Yale University
South Florida
Invited talk continued.
TF-MoM9 Uniform Adsorption of Ligand Free Ag Nanoparticles onto TiO2 Thin Films Deposited by Atomic Layer Deposition, J.C. HALBUR, J.S. JUR,
10:40 am
11:00 am
North Carolina State University
11:20 am
Analysis of Chemicurrent Components Induced by Hydrogen Oxidation on Pt/n-GaP and Pt/n-SiC Planar Schottky Nanostructures, S.
Alloy Films Grown Using Al2O3 ALD and Alucone MLD: Critical Tensile Strains, Water Vapor Transmission Rates and Compliant Interlayers, S.H. JEN, B.H. LEE, S.M. GEORGE, University of Colorado, Boulder, P.F.
SS-MoM10
TF-MoM10
DASARI, M. HASHEMIAN, E. KARPOV, University of Illinois at Chicago
CARCIA, R.S. MCLEAN, DuPont Central Research and Development
11:40 am
Enhanced Chemicurrent Effect of H2 Oxidation on Porous MIM Nanostructures, E. KARPOV, M. HASHEMIAN, S. DASARI, University of Illinois at
SS-MoM11 Chicago
89
Monday Morning, October 29, 2012 Vacuum Technology Room: 14 - Session VT-MoM Vacuum Gauging and Metrology 8:20 am
Moderator: G.A. Brucker, Brooks Automation, Inc., Granville-Phillips Products VT-MoM1 Sapphire-based Capacitance Diaphragm Vacuum Gauge Operating at 500 oC, T. ISHIHARA, H. TOCHIGI, J. YOSHINAGA, M. NAGATA, Azbil Corporation, Japan
8:40 am
9:00 am
VT-MoM2 On the Stability of Capacitance Diaphragm Gauges, M. WÜEST, C. STRIETZEL, INFICON Ltd, Liechtenstein
VT-MoM3 Invited
A Truly Cold Vacuum Gauge for Ultra–high Vacuum and Extreme–high Vacuum Employing a Hydrogen Absorber, G.A. MULHOLLAN, Saxet Surface Science
9:20 am
Invited talk continued.
9:40 am
VT-MoM5 Investigation of Pumping Combinations to Achieve XHV, M.L. STUTZMAN, P.A. ADDERLEY, Thomas Jefferson National Accelerator Facility, M.A. MAMUN, Old Dominion University, M. POELKER, Thomas Jefferson National Accelerator Facility
10:00 am
Beyond Mercury Manometers: Are Optically-Based Primary Standards for Realization of the Pascal Within Reach?, J.H. HENDRICKS,
VT-MoM6
J.A. STONE, G.F. STROUSE, D.A. OLSON, J.E. RICKER, National Institute of Standards and Technology
10:20 am
BREAK
10:40 am
VT-MoM8
Reduction of Statistical Scatter of Spinning Rotor Gauge Readings by Operation at Higher Rotational Frequency, J. SETINA, Institute
of Metals and Technology, Slovenia
Long-Term Stability of Hot-Filament Metal-Envelope Enclosed Ionization Gauges, J.A. FEDCHAK, National Institute of Standards and Technology
11:00 am
VT-MoM9
11:20 am
VT-MoM10 Non-Destructive Gas Pressure Measurements Inside Sealed Vacuum Devices, R.S. GOEKE, T.P. HUGHES, Sandia National Laboratories
11:40 am
VT-MoM11 Vacuum Gauge Operation in Noisy Accelerator Environments, L. SMART, Brookhaven National Laboratory
90
Monday Afternoon, October 29, 2012 Applied Surface Science Room: 20 - Session AS-MoA Quantitative Surface Chemical Analysis, Technique Development, and Data Interpretation - Part 2
Actinides and Rare Earths Focus Topic Room: 6 - Session AC+TF+SS+MI-MoA Actinides and Rare Earths: Thin Films and Surface Science
Moderators: J.A. Ohlhausen, Sandia National Laboratories, S. Suzer, Bilkent University, Turkey AS-MoA1 Polyatomic and Gas Cluster Ion Beam Depth-Profiling: A Model Indicating the Most Appropriate Source for an Arbitrary, Known Polymer Matrix and Estimates of Polymer Sputter Rates, P.J. CUMPSON, N. SANO,
Moderator: R.K. Schulze, Los Alamos National Laboratory 2:00 pm
AC+TF+SS+MI-MoA1 Invited
Rare Earth 4f Hybridization in Gallium Nitride, J.W. MCCLORY, S.R. MCHALE, Air Force Institute of Technology, L. WANG, W.N. MEI, University of Nebraska-Lincoln, J.C. PETROSKY, Air Force Institute of Technology, J. WU, R. PALAI, University of Puerto Rico – San Juan, YA.B. LOSOVYJ, Louisiana State University, P.A. DOWBEN, University of Nebraska-Lincoln
NEXUS XPS Facility, Newcastle University, UK
AS-MoA2 XPS Profiling of Biosensor Materials with Argon Cluster Ions, P. MACK, R.G. WHITE, T.S. NUNNEY, Thermo Fisher Scientific, UK, J.J. PIREAUX, P. LOUETTE, N. WEHBE, L. HOUSSIAU, FUNDP, Namur, Belgium
2:20 pm
Invited talk continued.
2:40 pm
AC+TF+SS+MI-MoA3 Revisiting the Yb Electronic Structure with LowAS-MoA3 ToF-SIMS and NanoSIMS Imaging of Uranium Distributions in Energy Photoemission Spetroscopy, F. OFFI, CNISM and Univ. Roma Tre, Italy, P. the Sediment of Hanford Site, Z. ZHU, Z. WANG, Pacific Northwest National
3:00 pm
VILMERCATI, L. PETACCIA, S. GOROVIKOV, ELETTRA Sincrotrone Trieste, Italy, A. RUOCCO, CNISM and Univ. Roma Tre, Italy, M.I. TRIONI, CNR-ISTM, Milano, Italy, A. RIZZO, CNISM and Univ. Roma Tre, Italy, A. GOLDONI, ELETTRA Sincrotrone Trieste, Italy, G. STEFANI, CNISM and Univ. Roma Tre, Italy, G. PANACCIONE, CNR-IOM, BasovizzaTrieste, Italy, S. IACOBUCCI, CNI-IFN, Rome, Italy AC+TF+SS+MI-MoA4 Erbium Rare Earth Thin Film Hydride Stress Studies as a Function of Processing Techniques, J.L. PROVO, J.L. Provo Consulting
Laboratory
AS-MoA4 ToF-SIMS MCsx+ Dual Beam Depth Profiling with Improved Dynamic Range, S. KAYSER, ION-TOF GmbH, Germany, N. HAVERCROFT, ION-TOF USA, Inc., F. KOLLMER, R. MOELLERS, E. NIEHUIS, ION-TOF GmbH, Germany
3:20 pm
BREAK
BREAK
3:40 pm
AC+TF+SS+MI-MoA6 Splat Cooling Technique Contributing to Understanding of Uranium Systems, L. HAVELA, Charles University, Czech
AS-MoA6 Invited
Surface Diffusion of Carbon on Metals and Complications for Auger Spectroscopy of Carburized Steels, W.D. JENNINGS, Case Western Reserve
Republic, A. GONÇALVES, J.-C. WAERENBOGH, L. PEREIRA, ITN Sacavém, Portugal, I. TKACH, Charles University, Czech Republic, N.-T. KIM-NGAN, Pedagogical University Cracow, Poland, T.B. SCOTT, University of Bristol, UK 4:00 pm
University
AC+TF+SS+MI-MoA7 Investigation of Rare Earth Doped Lithium Tetraborate Glasses with XAFS and Emission and Excitation Spectroscopy, T.D.
Invited talk continued.
KELLY, J.W. MCCLORY, D.A. BUCHANAN, A.T. BRANT, J.C. PETROSKY, Air Force Institute of Technology, YA.B. LOSOVYJ, Louisiana State University, V.T. ADAMIV, YA.V. BURAK, Institute of Physical Optics, P.A. DOWBEN, University of Nebraska-Lincoln 4:20 pm
AC+TF+SS+MI-MoA8 Effect of Ball Milling on Magnetic Properties of Er2Fe16Nb Alloy by High Energy Milling, B.K. RAI, S.R. MISHRA, The University
Charge Referencing Complex Organic Materials in XPS using Hexatriacontane, L. LOHSTRETER, Medtronic, Inc. AS-MoA8
of Memphis
4:40 pm
AC+TF+SS+MI-MoA9 Eu-implanted p-type GaN: Charge-Driven Luminescence Hysteresis and Identification of a Possible Charge-StateAlternation Resonance of the Mg Acceptor, K.P. O'DONNELL, P.R. EDWARDS,
PADI: Ambient Surface Analysis of Polymers and Molecules – Metrology Development for Reliable Analysis, T.L. SALTER, I.S. GILMORE, AS-MoA9
National Physical Laboratory, UK
R.W. MARTIN, Strathclyde University, Scotland, UK, K. LORENZ, E. ALVES, V. DARAKCHIEVA, ITN Sacavém, Portugal, M. BOCKOWSKI, Unipress, Poland 5:00 pm
AS-MoA10 Ion Beam Analysis of Surfaces and Thin Films, L.S. WIELUNSKI, R.A. BARTYNSKI, Rutgers University
5:20 pm
91
Monday Afternoon, October 29, 2012 Biomaterial Interfaces Room: 23 - Session BI-MoA
Spectroscopic Ellipsometry Focus Topic Room: 19 - Session EL+TF+BI+AS+EM+SS-MoA
Cell-Surface Interactions: High Throughput Methodologies
Spectroscopic Ellipsometry: From Organic and Biological Systems to Inorganic Thin Films
Moderator: M.R. Alexander, University of Nottingham, UK 2:00 pm
2:20 pm
Moderator: M.S. Wagner, The Procter & Gamble Company EL+TF+BI+AS+EM+SS-MoA1 Biochemical Optical Sensors Based on HighlyOrdered Slanted Columnar Thin Films, D. SCHMIDT, K.B. RODENHAUSEN,
BI-MoA1 Invited
3D Niche Microarrays for Systems-Level Analyses of Stem Cell Fate, A. RANGA, M. LUTOLF, École Polytechnique Fédérale de Lausanne, Switzerland
University of Nebraska-Lincoln, J. VANDERSLICE, T.E. TIWALD, J.A. Woollam Co., Inc., E. SCHUBERT, M. SCHUBERT, University of Nebraska-Lincoln
Invited talk continued.
EL+TF+BI+AS+EM+SS-MoA2
Studies of Optical Properties of Hybrid Jaggregates and Nanocrystal Quantum Dots Layers for Photonic Applications, K. ROODENKO, H.M. NGUYEN, L. CAILLARD, A. RADJA, O. SEITZ,
YU.N. GARTSTEIN, A.V. MALKO, Y.J. CHABAL, The University of Texas at Dallas
2:40 pm
BI-MoA3 Microfluidic Gradient Systems to Generate Defined Cell Microenvironments and Study Cellular Fate Processes, P. WALLIN, E.
EL+TF+BI+AS+EM+SS-MoA3 Invited
Love and Death, the Story of Most Proteins and Most Surfaces as Told by Spectroscopic Ellipsometry, T. BENAVIDEZ, K. CHUMBUNI-TORRES, J.L.
BERNSON, J. GOLD, Chalmers University of Technology, Sweden
FELHOFER, C.D. GARCIA, The University of Texas at San Antonio
3:00 pm
BI-MoA4 What Makes the Heart Grow Fonder? High Throughput Screening of Synthetic Surfaces for Cardiomyocyte Culture, A.K. PATEL,
Invited talk continued.
M.R. ALEXANDER, M.C. DAVIES, University of Nottingham, UK, D.G. ANDERSON, R. LANGER, Massachusetts Institute of Technology, C. DENNING, University of Nottingham, UK
BREAK
BREAK
BI-MoA6 Invited
EL+TF+BI+AS+EM+SS-MoA6 Invited
4:00 pm
Invited talk continued.
Invited talk continued.
4:20 pm
BI-MoA8 High-throughput Discovery of Polymers for Stem Cell Culture, A.D. CELIZ, Univeristy of Nottingham, UK, M. MAHLSTEDT, A.L. HOOK, D.J. SCURR, University of Nottingham, UK, D.G. ANDERSON, R. LANGER, Massachusetts Institute of Technology, D.A. BARRETT, C. DENNING, L. YOUNG, M.C. DAVIES, M.R. ALEXANDER, University of Nottingham, UK
EL+TF+BI+AS+EM+SS-MoA8
3:20 pm
3:40 pm
4:40 pm
A Scaffoldomics Approach to Measuring Effects of Scaffold Properties on Stem Cell Fates, C. SIMON, National Institute of Standards and Technology
Detailed Photoresist and Photoresist Processing Studies using Spectroscopic Ellipsometry, C. HENDERSON, Georgia Institute of Technology
Ellipsometric Characterization of a Thin Titaniumoxide Nanosheets Layer, H. WORMEESTER, G. MAIDECCHI, S. KUMAR,
A. KUMAR, A. TEN ELSHOF, H.J.W. ZANDVLIET, MESA+ Institute for Nanotechnology, University of Twente, The Netherlands
BI-MoA9 Plasma Polymer Films at the Interface: Biomaterial Applications, B.R. COAD, University of South Australia
EL+TF+BI+AS+EM+SS-MoA9 Preparation of Abrupt LaAlO3 Surfaces Monitored by Spectroscopic Ellipsometry, C.M. NELSON, M. SPIES, L.S. ABDALLAH, S. ZOLLNER, Y. XU, H. LUO, New Mexico State University
5:00 pm
BI-MoA10 A High Throughput Strategy for Studying Protein Preadsorption to Materials Developed for Stem Cell Culture, M. HAMMAD, University of Nottingham, UK, D.G. ANDERSON, R. LANGER, Massachusetts Institute of Technology, M.R. ALEXANDER, M.C. DAVIES, University of Nottingham, UK
5:20 pm
EL+TF+BI+AS+EM+SS-MoA10 Determination of the Refractive Index of a Gold-Oxide Thin Film Using X-Ray Photoelectron Spectroscopy and Spectroscopic Ellipsometry, K. COOK, G.S. FERGUSON, Lehigh University
BI-MoA11 Combinatorial Development of Biomaterials for Pluripotent Human Stem Cell Culture, Y. MEI, Clemson University
92
Monday Afternoon, October 29, 2012 Electronic Materials and Processing Room: 9 - Session EM+TF+OX+GR-MoA
Energy Frontiers Focus Topic Room: 15 - Session EN+TF-MoA
High-k Dielectrics for MOSFETS II
Chalcogenide Solar Cells I
Moderators: C.L. Hinkle, University of Texas at Dallas H.J. Kim, National Institute of Aerospace (NIA) 2:00 pm
Moderator: J. Luther, NREL
EM+TF+OX+GR-MoA1 Invited
EN+TF-MoA1 Invited
ALIAN, A. FIRRINCELLI, S. JIANG, M. CANTORO, J. DEKOSTER, M. CAYMAX, M. HEYNS, IMEC, Belgium
National Renewable Energy Laboratory
2:20 pm
Invited talk continued.
Invited talk continued.
2:40 pm
EM+TF+OX+GR-MoA3 Improving Nucleation and Passivation of Ge(100) via H2O and H2O2 Dosing, T. KAUFMAN-OSBORN, K. KIANTAJ, J.S. LEE, A.C.
EN+TF-MoA3 Invited
"6.1" Family: The Next Generation of III-V Semiconductors for Advanced Research Strategies and Results Toward Improving Thin Film CdTe CMOS: Epitaxial Growth and Passivation Challenges, C. MERCKLING, A. Photovoltaic Devices Beyond 20% Conversion Efficiency, T.A. GESSERT,
KUMMEL, University of California San Diego
3:00 pm
EM+TF+OX+GR-MoA4 Electrical and Physical Characteristics of Highk/Metal Gate MOS Devices on MBE-Grown Germanium on Silicon Using Aspect Ratio Trapping, S.R.M. ANWAR, C. BUIE, N. LU, M.J. KIM, C.L. HINKLE,
Nanocrystal-Ink and Soluble-Precursor Routes to Earth Abundant Element Kesterite Solar Cells, H.W. HILLHOUSE, University of Washington
Invited talk continued.
University of Texas at Dallas
3:20 pm
BREAK
BREAK
3:40 pm
EM+TF+OX+GR-MoA6 In Situ Infrared Spectroscopy Study on the Temperature Dependence on the Growth Mechanism of Atomic Layer Deposition of Al2O3 on InP(100), W. CABRERA, The University of Texas at Dallas,
EN+TF-MoA6 Invited
Developing Earth Abundant and Quantum Dot Materials for Thin-Film Photovoltaics, M. LAW, University of California Irvine
I.M. POVEY, Tyndall National Institute, Y.J. CHABAL, The University of Texas at Dallas
4:00 pm
EM+TF+OX+GR-MoA7 Invited
Ultimate Scaling of High-k Gate Dielectrics: Current Status and Challenges, T. ANDO, M.M. FRANK, E.A. CARTIER, B.P. LINDER, J. ROZEN, IBM T.J.
Invited talk continued.
Watson Research Center, K. CHOI, GLOBALFOUNDRIES, V. NARAYANAN, IBM T.J. Watson Research Center 4:20 pm
Invited talk continued.
EN+TF-MoA8 Synthesis of Photovoltaic Cu2ZnSnS4 via Ex Situ Sulfidation of Co-Sputtered Cu-Zn-Sn Thin Films, M. JOHNSON, M. MANNO, X. ZHANG, C. LEIGHTON, E.S. AYDIL, University of Minnesota
4:40 pm
5:00 pm
AR-XPS Study of Al2O3/In-based III-V Interfaces after EN+TF-MoA9 Crossover from Intergranular Hopping to Conventional Annealing under Vacuum at Low Temperature, E. MARTINEZ, H. GRAMPEIX, Charge Transport in Pyrite FeS2 Thin Films, X. ZHANG, M. MANNO, A.
EM+TF+OX+GR-MoA9
O. DESPLATS, CEA, LETI, MINATEC Campus, France, A. HERRERA-GOMEZ, O. CEBALLOS-SANCHEZ, CINVESTAV-Unidad Queretaro, Mexico, J. GUERRERO, K. YCKACHE, F. MARTIN, CEA, LETI, MINATEC Campus, France
BARUTH, M. JOHNSON, E.S. AYDIL, C. LEIGHTON, University of Minnesota
EM+TF+OX+GR-MoA10 Effect of a H2 Plasma Pre-treatment on the Reduction of Native Oxides at the PEALD Al2O3/InAs Interface, E.
EN+TF-MoA10 Plasma Assisted Synthesis of Pyrite Absorbers, R. MORRISH, R. SILVERSTEIN, C.A. WOLDEN, Colorado School of Mines
CLEVELAND, L. RUPPALT, J.B. BOOS, B. BENNETT, J. CHAMPLAIN, S.M. PROKES, Naval Research Laboratory
5:20 pm
Development and Characterization of dc Plasma Sputtered Molybdenum Thin Films with Bi- and Tri-layer Stress Configuration, M. EN+TF-MoA11
ISLAM, King Saud University, Saudi Arabia, A. AKRAM, A. HAYAT, M. KHAN, M. MUJAHID, National University of Science and Technology, Pakistan
93
Monday Afternoon, October 29, 2012 Graphene and Related Materials Focus Topic Room: 13 - Session GR+EM+ET+NS+TF-MoA
MEMS and NEMS Room: 10 - Session MN-MoA
Electronic Properties and Charge Transport
Multi-scale Interactions of Materials and Fabrication at the Micro- and Nano-scale
Moderator: T.W. Michely, Universität zu Köln, Germany 2:00 pm
Moderator: M. Metzler, Cornell University
Influence of Substrate Offcut on Electrical and Morphological Properties of Epitaxial Graphene, R.L. MYERS-WARD, V.D.
GR+EM+ET+NS+TF-MoA1
MN-MoA1 Invited
WHEELER, L.O. NYAKITI, T.J. ANDERSON, F.J. BEZARES, J.D. CALDWELL, A. NATH, N. NEPAL, C.R. EDDY, JR., D.K. GASKILL, U.S. Naval Research Laboratory
Acute Stress in Silicon Nitride, J.M. PARPIA, V.P. ADIGA, B. ILIC, R.A. BARTON, R. DE ALBA, Cornell University, I. WILSON-RAE, Technische Universität München, Germany, H.G. CRAIGHEAD, Cornell University
2:20 pm
GR+EM+ET+NS+TF-MoA2 Direct Determination of Dominant Scatterer in Graphene on SiO2, J. KATOCH, D. LE, T.S. RAHMAN, M. ISHIGAMI, University of Central Florida
2:40 pm
GR+EM+ET+NS+TF-MoA3 Invited MN-MoA3 In Situ SEM Micro Tension Tests on Nanoscale Single Crystal Tuning Electronic Properties of Graphene by Controlling its Environment, Metals and Nanocrystalline Metals, M. YILMAZ, J.W. KYSAR, Columbia University
Invited talk continued.
K.I. BOLOTIN, Vanderbilt University
3:00 pm
Invited talk continued.
MN-MoA4 Capacitively and Piezoelectrically Dual-Transduced Hybrid MEMS Resonators, I.-T. WU, J. DEWDNEY, J. WANG, University of South Florida
3:20 pm
BREAK
BREAK
3:40 pm
GR+EM+ET+NS+TF-MoA6
Study of Impurity-Induced Inelastic Scattering on Suspended Graphene by Scanning Confocal Micro-Raman Spectroscopy, L.W. HUANG, C.S. CHANG, Academia Sinica, Taiwan, Republic of China
MN-MoA6
4:00 pm
4:20 pm
4:40 pm
Fabrication and Testing of Suspended Piezoelectric Nanocomposite Membranes, J.R. FOX, S.B. HOROWITZ, J.P. CORTES, M.S. ALLEN, A.D. MATHIAS, L.A. BARKETT, Ducommun Miltec, M. SANGHADASA, U.S. Army Aviation and Missile Research Development and Engineering Center
GR+EM+ET+NS+TF-MoA7
The Adsorption of Molecules with Large Intrinsic Electrostatic Dipoles on Graphene, L. KONG, Univ. of Nebraska-Lincoln, G.J.
MN-MoA7
Fabrication of Nanoelectromechanical Systems via the Integration of Glancing Angle Deposition Thin Films, J.N. WESTWOOD,
PEREZ MEDINA, Univ. of Nebraska-Lincoln, Univ. of Puerto Rico, J. COLÓN SANTANA, Univ. of Nebraska-Lincoln, L. ROSA, Univ. of Nebraska-Lincoln, Univ. of Puerto Rico, L. ROUTABOUL, P. BRAUNSTEIN, Maître de conférences de l'Université de Strasbourg, France, B. DOUDIN, Institut de Physique et Chimie des Matériaux de Strasbourg, France, C.M. LEE, J. CHOI, Kyung Hee Univ., Korea, P.A. DOWBEN, Univ. of Nebraska-Lincoln
V.T.K. SAUER, J.K. KWAN, University of Alberta, Canada, W.K. HIEBERT, National Institutute for Nanotechnology, Canada, J.C. SIT, University of Alberta, Canada
GR+EM+ET+NS+TF-MoA8 Invited
MN-MoA8
Lawrence Berkeley National Laboratory, A. WALTER, TH. SEYLLER, Lawrence Livermore National Laboratory, K. HORN, E. ROTENBERG, Lawrence Berkeley National Laboratory
DIAMAND, D. SCHREIBER, S. KRYLOV, Tel Aviv University, Israel
Electroactive Polymeric MEMS Actuators Fabricated by Thermal Imprinting of P(VDF-TrFE-CFE) and Poly(dimethylsiloxane) (PDMS), J. SHKOVSKY, L. ENGEL, A. REUVENY, Y. SVERDLOV, Y. SHACHAM-
Growth of and Interactions in Epitaxial Graphene Layers, A. BOSTWICK,
A CMOS MEMS Gas Sensor Using Monolayer Protected Gold Nano-Clusters Coating on Three-Dimensional Interdigitated Electrodes,
Invited talk continued.
MN-MoA9
Y.C. CHEN, C.Y. CHANG, National Taiwan University, H.L. LU, C.-J. LU, National Taiwan Normal University, W.-C. TIAN, National Taiwan University
5:00 pm
5:20 pm
GR+EM+ET+NS+TF-MoA10 Squeezing of the Graphene Dirac Cone Observed by Scanning Tunneling Spectroscopy, J. CHAE, S. JUNG, Y. ZHAO,
MN-MoA10
Integration of Functionalized Biological Nanostructures with Conventional Transducer Fabrication Schemes, X. FAN, N. SIWAK, A.
N.B. ZHITENEV, J.A. STROSCIO, Center for Nanoscale Science and Technology / NIST, A. YOUNG, C. DEAN, L. WANG, Y. GAO, J.C. HONE, K.L. SHEPARD, P. KIM, Columbia University
BROWN, J. CULVER, R. GHODSSI, University of Maryland
GR+EM+ET+NS+TF-MoA11 Interfacial Interaction of Graphene and Metal Surfaces Investigated by Resonant Inelastic X-ray Scattering, L. ZHANG,
MN-MoA11
University of Science and Technology of China, Advanced Light Source, J.H. GUO, Advance Light Source, J.-H. ZHU, University of Science and Technology of China
D'HERS, Buenos Aires Institute of Technology, Argentina, A. ALEXANDER-KATZ, N.M. ELMAN, Massachusetts Institute of Technology
A Novel Computational and Experimental Methodology for Development of Therapeutic Microdevices for Rapid Reconstitution, S.
94
Monday Afternoon, October 29, 2012 Nanomanufacturing Science and Technology Focus Topic Room: 16 - Session NM+NS+MS+EM-MoA
Nanometer-scale Science and Technology Room: 12 - Session NS+SP-MoA
ALD and Scalable Processes for Nanomanufacturing
Nanopatterning and Nanolithography
From R&D Towards Industrial Atomic Layer Deposition: Challenges in Scaling up, M. PUTKONEN, Beneq Oy, Finland
NS+SP-MoA1
Moderator: T.S. Mayer, Penn State University 2:00 pm
Moderator: P.E. Sheehan, U.S. Naval Research Laboratory Optical Properties of As-Prepared and Annealed Gold Nanostructures Fabricated by Interference Lithography, A.B.
NM+NS+MS+EM-MoA1
TSARGORODSKA, University of Sheffield, UK, A.V. NABOK, Sheffield Hallam University, UK, A.J. LEE, University of Leeds, UK, G.J. LEGGET, University of Sheffield, UK
2:20 pm
NM+NS+MS+EM-MoA2 Invited
Enabling ALD for Semiconductor Manufacturing, M. CHANG, Applied Materials
NS+SP-MoA2 Invited
Inc.
Fast Turnaround 3D Nanolithography using Heated Probes – from Nanofabrication to Directed Assembly, A.W. KNOLL, P. PAUL, IBM Research -
2:40 pm
Invited talk continued.
Zurich, Switzerland, F. HOLZNER, IBM Research - Zurich, ETH Zurich, Switzerland, J.L. HEDRICK, IBM Research - Almaden, M. DESPONT, IBM Research - Zurich, Switzerland, C. KUEMIN, IBM Research - Zurich, ETH Zurich, Switzerland, H. WOLF, IBM Research - Zurich, Switzerland, N.D. SPENCER, ETH Zurich, Switzerland, U. DUERIG, IBM Research - Zurich, Switzerland Invited talk continued.
3:00 pm
NM+NS+MS+EM-MoA4
Migration to ALD Techniques in the Semiconductor Industry: Pattern Effects, Microloading and Film Thickness Variability in Dielectric Thin Films Deposition, M.P. BELYANSKY, IBM Semiconductor R&D
Center
NS+SP-MoA4 Laser Assisted Electron Beam Induced Deposition of Platinum, N.A. ROBERTS, University of Tennessee Knoxville, J.D. FOWLKES, Oak Ridge National Laboratory, G.A. MAGEL, T.M. MOORE, Omniprobe, Inc. an Oxford Instruments Company, P.D. RACK, University of Tennessee Knoxville
3:20 pm
BREAK
BREAK
3:40 pm
Interface Analysis of PEALD TaCN Deposited on HfO2 using Parallel Angle Resolved X-ray Photoelectron Spectroscopy for sub-20nm Gate Last CMOS Transistors, F. PIALLAT, ST Microelectronics,
NS+SP-MoA6
Parallel Stacking of Extended π-conjugated Molecules on Si(100)-H Surface, M.Z. HOSSAIN, Gunma University, Japan, H. KATO, Osaka
NM+NS+MS+EM-MoA6
University, Japan, M. KAWAI, The University of Tokyo and RIKEN, Japan
France, V. BEUGIN, R. GASSILLOUD, P. MICHALLON, CEA Grenoble, France, L. DUSSAULT, B. PELISSIER, LTM - MINATEC - CEA/LETI, France, C. LEROUX, CEA Grenoble, France, P. CAUBET, ST Microelectronics, France, C. VALLÉE, LTM - MINATEC CEA/LETI, France 4:00 pm
4:20 pm
4:40 pm
5:00 pm
NM+NS+MS+EM-MoA7 Deposition Temperature Dependence of TiO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition, J.S. LEE,
NS+SP-MoA7 Kinetics of disilane reaction on Si(100)-(2x1): Flux, Temperature, and H-coverage Dependence, D. DICK, J.-F. VEYAN, University
H.Y. JEON, J.G. PARK, H.J. KIM, H.T. JEON, Hanyang University, Republic of Korea
of Texas at Dallas, P. MATHIEU, Mc Gill University, Canada, J.N. RANDALL, Zyvex Laboratories, Y.J. CHABAL, University of Texas at Dallas
NM+NS+MS+EM-MoA8 Atmospheric Pressure Atomic Layer Deposition of Al2O3 using Trimethylaluminum and Ozone, M.B. MOUSA, D.H. KIM, C.J.
NS+SP-MoA8
OLDHAM, G.N. PARSONS, North Carolina State University
of Standards and Technology
NM+NS+MS+EM-MoA9 An Industrial Solution for Surface Passivation of c-Si using Al2O3 Film Deposited by In-line Atmosphere Chemical Vapor Deposition, K. JIANG, Gebr. Schmid GmbH + Co, Germany, K. DAVIS, University of
NS+SP-MoA9
SPM Lithography on Silicon Reconstructed and HydrogenPassivated Surface, J. FU, K. LI, N. PRADEEP, L. CHEN, R. SILVER, National Institute
Ultra-High Frequency Surface Acoustic Wave Generation in Silicon Using Inverted Nanoimprint Lithography, S. BÜYÜKKÖSE, University of
Central Florida, C. DEMBERGER, H. ZUNFT, H. HAVERKAMP, Gebr. Schmid GmbH + Co, Germany, W.V. SCHOENFELD, University of Central Florida, D. HABERMANN, Gebr. Schmid GmbH + Co, Germany
Twente, Netherlands, B. VRATZOV, NT&D – Nanotechnology and Devices, Germany, D. ATAÇ, J. VAN DER VEEN, University of Twente, Netherlands, P.V. SANTOS, Paul-DrudeInstitut für Festkörperelektronik, Germany, W.G. VAN DER WIEL, University of Twente, Netherlands
NM+NS+MS+EM-MoA10 Invited
NS+SP-MoA10
Solution Based Processing of Floating Gate Memory using AdditiveDriven Self-Assembly and Nanoimprint Lithography, J. WATKINS, University
Variance of Proximity Effect Correction Parameter Measured on Silicon, D.A. CZAPLEWSKI, L.E. OCOLA, Argonne National Laboratory
of Massachusetts
5:20 pm
Invited talk continued.
Nanopatterning of Poly(N-isopropylacrylamide) based Hydrogel – Gold Nanoparticle Composite, K.J. SUTHAR, D.C. MANCINI, R.S.
NS+SP-MoA11
DIVAN, Argonne National Laboratory, O.N. AHANOTU, University of Michigan
95
Monday Afternoon, October 29, 2012 Oxide Heterostructures-Interface Form & Function Focus Topic Room: 7 - Session OX+SS+TF+MI-MoA Chemistry of Oxide Surfaces and Interfaces
2:00 pm
Moderator: M. Engelhard, EMSL, Environmental Molecular Sciences Laboratory OX+SS+TF+MI-MoA1 Investigation of Al2O3 Nanostructure Surfaces Using Charge Optimized Many Body Potentials, D.E. YILMAZ, T. LIANG, S.B. SINNOTT, S.R. PHILLPOT, University of Florida
2:20 pm
2:40 pm
Plasma Science and Technology Room: 24 - Session PS+BI-MoA Applications of (Multiphase) Atmospheric Plasmas (including Medicine and Biological Applications)
Moderator: G.Y. Yeom, Sungkyunkwan University, Korea PS+BI-MoA1 Plasmas in Saline Solution Sustained Using Bipolar Pulsed Power Source – Tailoring the Discharge Behavior Using the Negative Pulses, H.W. CHANG*, C.C. HSU, National Taiwan University, Taiwan, Republic of China
OX+SS+TF+MI-MoA2 Manipulating Ferroelectric Surfaces for Direct NOx Decomposition, M.W. HERDIECH, A. KAKEKKHANI, S. ISMAIL-BEIGI, E.I. ALTMAN,
PS+BI-MoA2
Yale University
University of California Berkeley, E. BARTIS, J. SEOG, G.S. OEHRLEIN, University of Maryland
OX+SS+TF+MI-MoA3 Invited
PS+BI-MoA3 Invited
Catalyst Synthesis by Atomic Layer Deposition, P.C. STAIR, Northwestern University & Argonne National Laboratory
Low Temperature Plasma Deactivation of Endotoxic Biomolecules: The Effects on Lipid A, T.-Y. CHUNG, J.-W. CHU, D.B. GRAVES,
Nonthermal Bioplasma Sources and its Interactions to the Microbial, Fungal, Yeast and Living Cells, E.H. CHOI, Y. KIM, G.S. CHO, G. KWON, B.K. MIN, H. UHM, Kwangwoon University, Republic of Korea, P. SUANPOOT, Maejo University Phrae Campus, Thailand, G. LEE, R. JUNG, B. PARK, Kwangwoon University, Republic of Korea
3:00 pm
Invited talk continued.
Invited talk continued.
3:20 pm
BREAK
BREAK
3:40 pm
OX+SS+TF+MI-MoA6 Energy Alignment at Organic/Oxide Interfaces: The Influence of Adsorption Geometry and Chemical Bond on Interface Dipole, S. RANGAN, C. RUGGIERI, S. COH, R.A. BARTYNSKI, K. CHITRE, E.
PS+BI-MoA6 Deactivation of Lipopolysaccharide and Lipid A by Radicals Produced in Inductively Coupled Plasmas, E. BARTIS, University of Maryland,
4:00 pm
GALOPPINI, Rutgers University
T.-Y. CHUNG, J.-W. CHU, D.B. GRAVES, University of California Berkeley, J. SEOG, G.S. OEHRLEIN, University of Maryland
OX+SS+TF+MI-MoA7 Invited
PS+BI-MoA7
LU, University of Toronto, Canada
D.A. STEELE, N.H. VOELCKER, H.J. GRIESSER, R.D. SHORT, University of South Australia
Energy-Level Alignment at Organic/Oxide Interfaces, M.T. GREINER, Z.-H.
4:20 pm
Invited talk continued.
4:40 pm
OX+SS+TF+MI-MoA9 Variable Kinetic Energy XPS of the Buried P3HT/ITO Interface, M.T. BRUMBACH, Sandia National Laboratories, J.C. WOICIK, National
Localised, Non-Contact Surface Modification with Microplasma for Biotechnological Applications, S.A. AL-BATAINEH, E.J. SZILI,
PS+BI-MoA8 Invited
Biocompatible Nanocomposites Synthesized by Gas-Liquid Phases Plasmas, T. KANEKO, Q. CHEN, R. HATAKEYAMA, Tohoku University, Japan
Invited talk continued.
Institute of Standards and Technology
5:00 pm
5:20 pm
OX+SS+TF+MI-MoA10 Organic Molecules Adsorbed on the ZnO(10-10) Surface: An Infrared Reflection Absorption Spectroscopy Study, M.
PS+BI-MoA10
Organization of Dielectric Barrier Discharges in the Presence of Structurally-Inhomogeneous Wood Substrates, O.
BUCHHOLZ, Karlsruhe Institute of Technology, Germany, H. NOEI, Y. WANG, Ruhr University Bochum, Germany, A. NEFEDOV, CH. WÖLL, Karlsruhe Institute of Technology, Germany
LEVASSEUR, Université de Montréal, Canada, A. BOUAROURI, N. NAUDÉ, R. CLERGEREAUX, N. GHERARDI, Université de Toulouse, UPS, INPT, LAPLACE, France, L. STAFFORD, Université de Montréal, Canada
OX+SS+TF+MI-MoA11
In Situ Interface Analysis of Self-Assembled Monolayers on Metal Surfaces at High Water Activities by Means of a PM-IRRAS/QCM-Setup, I. GINER, M. MAXISCH, G. GRUNDMEIER, University of
PS+BI-MoA11 Role of Substrate Outgassing on the Formation Dynamics of Either Hydrophilic of Hydrophobic Wood Surfaces in AtmosphericPressure, Organosilicon Plasmas, O. LEVASSEUR, L. STAFFORD, Université de
Paderborn, Germany
Montreal, Canada, N. GHERARDI, N. NAUDÉ, Université de Toulouse, UPS, INPT, LAPLACE, France, P. BLANCHET, FPInnovations, Canada, B. RIEDL, Université Laval, Canada, A. SARKISSAN, Plasmionique, Canada
96 * Coburn & Winters Student Award Finalist
Monday Afternoon, October 29, 2012 Plasma Science and Technology Room: 25 - Session PS2-MoA
Advanced Surface Engineering Room: 22 - Session SE+NS-MoA
Plasma Modeling
Nanostructured Thin Films and Coatings II: Multifunctional Properties
Moderator: I. Schweigert, Institute of Theoretical and Applied Mechanics, Russia 2:00 pm
Moderator: E. Broitman, Linköping University, Sweden
PS2-MoA1 Invited
SE+NS-MoA1 Invited
Tailored Ion Energy Distributions on Plasma Electrodes, P. DIOMEDE, D.J.
Layered Binary Metal Oxide Solid Lubricants for High Temperature Moving Assemblies, S. AOUADI, D. STONE, Southern Illinois University Carbondale, A.
ECONOMOU, V.M. DONNELLY, University of Houston
MARTINI, University of California Merced, C. MURATORE, A.A. VOEVODIN, Air Force Research Laboratory 2:20 pm
Invited talk continued.
Invited talk continued.
2:40 pm
PS2-MoA3
Self-Consistent Multi-Dimensional Modeling of Inductively Coupled Plasmas, A. AGARWAL, J. KENNEY, M.-F. WU, S. RAUF, K. COLLINS,
SE+NS-MoA3 Free-standing Nanoscale Gold Pyramidal Films with Milled Nanopores, J.A. GRANT-JACOB, W.S. BROCKLESBY, T. MELVIN, Optoelectronics Research Centre
Applied Materials Inc.
3:00 pm
PS2-MoA4 Feature Profile Modeling of STT-MRAM Etch, P. STOUT, Applied Materials Inc.
Synthesis of Superhydrophobic PTFE-like Thin Films by Self-Nanostructuration in a Hybrid Plasma Process, F. HENRY, University of SE+NS-MoA4
Mons, Belgium, F. RENAUX, S. COPPÉE, Materia Nova Research Center, Belgium, R. LAZZARONI, University of Mons, Belgium, N. VANDENCASTEELE, F. RENIERS, ULB, Belgium, R. SNYDERS, University of Mons, Belgium 3:20 pm
BREAK
BREAK
3:40 pm
PS2-MoA6 Development of a New Industry Focused Plasma Simulation Tool, A.I. WILLIAMS, University College London, UK, S. LOPEZ-LOPEZ, Quantemol Ltd., UK, W. BRIGG, J. TENNYSON, University College London, UK
SE+NS-MoA6
PS2-MoA7
Mechanism of Generating Ions and Radicals in Fluorocarbon Plasma Investigated by Reaction Model Analysis, Y. KONDO*, Y. MIYAWAKI,
SE+NS-MoA7
K. TAKEDA, H. KONDO, K. ISHIKAWA, T. HAYASHI, M. SEKINE, M. HORI, Nagoya University, Japan
POPOV, A.G. KOLOSKO, M.V. ERSHOV, S.V. FILIPPOV, A.F. Ioffe Physico-Technical Institute, Russian Federation
The Search for a Physical Sheath: Fine Meshes, Collisions and Secondary Emission when Modeling Plasma Sheaths, C.
SE+NS-MoA8 Invited
4:00 pm
4:20 pm
Creation of Highly Functionalized Polymer-Metal Oxide Nanomaterials Using A Novel Rotating Drum Plasma Reactor, J.C. SHEARER, E.R. FISHER, Colorado State University
Field Emission Dynamic Investigation of the PolymerMWCNT Composite Films Depending from Vacuum Conditions, E.O.
PS2-MoA8
Cost Efficiency Trade Off in Nanostructured Thermoelectric Energy Conversion Systems, A. SHAKOURI, K. YAZAWA, Birck Nanotechnology Center,
HENDERSON, University of Wisconsin-Madison
Purdue University
4:40 pm
PS2-MoA9 Excitation of Ion Acoustic Waves by Electron Beams, I.D. KAGANOVICH, Princeton Plasma Physics Laboratory, D. SYDORENKO, University of Alberta, Canada, E. TOKLUOGLU, E.A. STARTSEV, A.V. KHRABROV, Princeton Plasma Physics Laboratory, L. CHEN, P. VENTZEK, R. SUNDARARAJAN, Tokyo Electron America
Invited talk continued.
5:00 pm
PS2-MoA10 Multi-Peaked and Stepped Electron Velocity Distributions in RF-DC Discharges with Secondary Emission, A.V. KHRABROV, I.D.
SE+NS-MoA10
KAGANOVICH, Princeton Plasma Physics Laboratory, D. SYDORENKO, University of Alberta, Canada, E. TOKLUOGLU, E.A. STARTSEV, Princeton Plasma Physics Laboratory, L. CHEN, P. VENTZEK, R. SUNDARARAJAN, Tokyo Electron America
M. GRADY, N.R. SOTTOS, D.G. CAHILL, P.V. BRAUN, University of Illinois at Urbana Champaign
PS2-MoA11 Simulations of the Radial Line Slot Antenna Plasma Source, P. VENTZEK, Tokyo Electron America, S. MAHADEVAN, Esgee Technologies, J. YOSHIKAWA, Tokyo Electron Technology Development Institute, INC., L. RAJA, University of Texas at Austin, T. IWAO, Tokyo Electron Technology Development Institute, INC., L. CHEN, R. SUNDARARAJAN, J. ZHAO, Tokyo Electron America, T. NOZAWA, K. ISHIBASHI, Tokyo Electron Technology Development Institute, INC., R. UPADHYAY, Esgee Technologies
Growth, Nanostructure Formation, and Physical Properties of Single-Phase, Epitaxial, SrTiO3-TiO2 Nanocomposites: A Topological Insulator Approach to High-T Thermoelectrics, B.M. HOWE, Air Force Research
5:20 pm
The Effects of Interfacial Bond Stiffness on Heat Transport: An Experimental Study Using Self-Assembled Monolayers, M.D. LOSEGO,
SE+NS-MoA11
Laboratory, E. THOMAS, University of Dayton Research Institute, D. DUDIS, Air Force Research Laboratory
97
* Coburn & Winters Student Award Finalist
Monday Afternoon, October 29, 2012 Surface Science Room: 21 - Session SS-MoA
Thin Film Room: 11 - Session TF+EN-MoA
Surface Dynamics
ALD for Energy
SS-MoA1 Invited
TF+EN-MoA1 Invited
Moderator: D.J. Auerbach, University of California, Santa Barbara 2:00 pm
Moderator: R.K. Grubbs, Sandia National Laboratories
Creation and Reaction of Solvated Electrons at the Vacuum-Liquid Interface, W.A. ALEXANDER, Montana State University, J.P. WIENS, University of Wisconsin-Madison, T.K. MINTON, Montana State University, G.M. NATHANSON, University of Wisconsin-Madison
Atomic Layer Deposition for the Synthesis of Nanostructured Catalysts, J.W. ELAM, C. MARSHALL, Argonne National Lab, E. STACH, F. RIBEIRO, Purdue Univ., J. GREELEY, Argonne National Lab, J. NOTESTEIN, K. POEPPELMEIER, Northwestern Univ., L. CURTISS, Argonne National Lab, M. KUNG, P.C. STAIR, Northwestern Univ., L. WINANS, Argonne National Lab, S. NGUYEN, Northwestern Univ.
2:20 pm
Invited talk continued.
Invited talk continued.
2:40 pm
SS-MoA3 Liquid-Crystal to Solid-Crystal Phase Transition in Flexible ArylTriazole Oligomer Adsorbates at the Liquid / HOPG Interface, B. HIRSCH,
TF+EN-MoA3 Using Metalcone Films Grown by Molecular Layer Deposition to Form Conducting Metal Oxide-Carbon Composite Films, A.
K. MCDONALD, A. FLOOD, S.L. TAIT, Indiana University - Bloomington
ABDULAGATOV, K. TERAUDS, J. TRAVIS, A. CAVANAGH, R. RAJ, CU Boulder, S.M. GEORGE, University of Colorado, Boulder
SS-MoA4 State-Resolved Studies of Methane Activation: Mechanistic Insights into Gas-Surface Reactivity, A.L. UTZ, Tufts University
TF+EN-MoA4
3:00 pm
In Situ Growth Study and Material Characterization of Plasma-Assisted Atomic Layer Deposition of Palladium, M.J. WEBER, A.J.M. MACKUS, M.A. VERHEIJEN, N. LEICK-MARIUS, A. BOL, W.M.M. KESSELS, Eindhoven University of Technology, Netherlands
3:20 pm
BREAK
BREAK
3:40 pm
SS-MoA6 Autocatalytic Decomposition Mechanism of Aspartic Acid on Cu(110) Surfaces, B.S. MHATRE, A.J. GELLMAN, Carnegie Mellon University
TF+EN-MoA6 ALD-enabled Nanostructures for High Rate Li-ion Storage, X. CHEN, H. ZHU, L. HU, G.W. RUBLOFF, University of Maryland
4:00 pm
SS-MoA7 Quantum Tunneling Driven Assembly and Diffusion of Hydrogen and Deuterium on Cu(111), A.D. JEWELL*, Tufts University, G. PENG,
TF+EN-MoA7 Enhancement of the Heat Recovery Mechanism in Infrared Photovoltaic Devices Promoted by Thin Planar ALD Oxide Films, A.J.
University of Wisconsin Madison, G. KYRIAKOU, Tufts University, M. MAVRIKAKIS, University of Wisconsin Madison, C.H. SYKES, Tufts University
VINCENT-JOHNSON, H.S. MANN, Y. SCHWAB, James Madison University, A.E. MASTERS, Custom Thermoelectrics Inc., X. HU, G. SCAREL, James Madison University
4:20 pm
4:40 pm
5:00 pm
SS-MoA8 H Absorption Depth Profiling Measurement at Ultra-thin Pd(111) TF+EN-MoA8 Ultra-thin TiO2 Blocking Layer by Atomic Layer Deposition Film by Thermal Desorption Spectroscopy, Y. AOKI, S. NAKAJIMA, H. for Dye-Sensitized Solar Cells, D.H. KIM, M. WOODROOF, K.M. LEE, B. HIRAYAMA, Tokyo Institute of Technology, Japan
KALANYAN, G.N. PARSONS, North Carolina State University
SS-MoA9 Novel Insight Into the Formation Mechanism of Subsurface Hydrogen at Pd(110) Surfaces, S. OHNO, M. WILDE, K. FUKUTANI, The University
TF+EN-MoA9 Growth of Earth Abundant Pyrite Solar Absorber by using Atomic Layer Deposition, T. DHAKAL, Center for Autonomous Solar Power, SUNY-
of Tokyo, Japan
Binghamton
Glide-Plane-Specific Selectivity of HREELS Demonstrated in H:Si(110)-(1x1) Phonon Dispersion, T. YAMADA, RIKEN, Japan, S.Y.
SS-MoA10
MATSUSHITA, Tohoku University, Japan, H. KATO, Science University of Tokyo, Japan, A. KASUYA, S. SUTO, Tohoku University, Japan
5:20 pm
The Lifetimes and Energy Redistribution of Intramolecular Vibrational Modes of a Surface Adsorbate: Methoxy on Cu(100), P.
SS-MoA11
UVDAL, Lund University, Sweden, P. ANDERSSON, University of Copenhagen, Denmark, J. BLOMQUIST, Malmö University, Sweden, A. FUENTES, M. PERSSON, University of Liverpool, UK
98 * Morton S. Traum Award Finalist
Monday Afternoon, October 29, 2012 Vacuum Technology Room: 14 - Session VT-MoA Gas Flow, Leaks, Permeation and Mass Analysis
Moderator: J.A. Fedchak, National Institute of Standards and Technology 2:00 pm
VT-MoA1 Invited
First International Comparison of Standard Leak Calibrations of Metrological Institutes, K. JOUSTEN, PTB, Germany, K. ARAI, NMIJ, Japan, U. BECKER, O. BODNAR, PTB, Germany, F. BOINEAU, LNE, France, J.A. FEDCHAK, NIST, V. GOROBEY, VNIIM, Russian Federation, W. JIAN, SPRING, Singapore, D. MARI, INRIM, Italy, P. MOHAN, NPL/I, India, J. ŠETINA, IMT, Slovenia, B. TOMAN, NIST, M. VICAR, CMI, Czech Republic, YH. YAN, NIM, China
2:20 pm
Invited talk continued.
2:40 pm
VT-MoA3 Comparison of the Flow Ratio of the Permeation Type Helium Standard Leaks and the Gas Flow Generator Composed with a Small Conductance Element Made by Sintered Stainless Steel, N. TAKAHASHI, ULVAC Inc., Japan, H. YOSHIDA, AIST Japan
3:00 pm
VT-MoA4 Porous Plug Made of Sintered Stainless Steel used as Standard Conductance Element, H. YOSHIDA, K. ARAI, T. KOBATA, National Institute of AIST, Japan
3:20 pm
BREAK
3:40 pm
VT-MoA6 Measurement of Gas Transport in Solids by a Saturation/ Outgassing Method, L. WANG, J.A. TANSKI, R.Y. WEINBERG, Los Alamos National Laboratory
4:00 pm
VT-MoA7 Report on Workshop on Measurement Characteristics and Use of Quadrupole Mass Spectrometers for Vacuum Applications, K. JOUSTEN, Physikalisch Technische Bundesanstalt, Germany, J. ŠETINA, Institute of Metals and Technology, Slovenia, R. ELLEFSON, REVac Consulting
4:20 pm
VT-MoA8 Invited
Mass Spectrometry a Mile Deep: Issues and Solutions for Underwater Vacuum Systems, R.T. SHORT, SRI International
4:40 pm
Invited talk continued.
5:00 pm
VT-MoA10 Performance Optimization for Autoresonant Ion Trap Mass Spectrometers, G.A. BRUCKER, J. RATHBONE, B. HORVATH, Brooks Automation, Inc., Granville-Phillips Products
5:20 pm
VT-MoA11 Differential Pumping Method for a Fast Partial Pressure Analyzer of Recent Design to Extend its Upper Pressure Limit Up to the Torr Range, P.C. ARNOLD, T.C. SWINNEY, Brooks Automation, Inc., Granville-Phillips Products
99
Anticipated Schedule Monday Morning, October 29, 2012 TIME
SESSION
ROOM
8:00 am
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8:20 am
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8:40 am
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9:00 am
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9:20 am
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9:40 am
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10:00 am
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10:20 am
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10:40 am
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11:00 am
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11:20 am
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11:40 am
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12:00 pm
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Lunch when
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with
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where
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Anticipated Schedule Monday Afternoon, October 29, 2012 TIME
SESSION
ROOM
1:00 pm
______________________________________________________________________________________________________________________________________________
1:20 pm
______________________________________________________________________________________________________________________________________________
1:40 pm
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2:00 pm
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2:20 pm
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2:40 pm
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3:00 pm
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3:20 pm
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5:00 pm
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100
TUESDAY SPECIAL EVENTS 7:00 a.m. 7:00 a.m 8:00 a.m. 8:00 a.m. 8:20 a.m. 9:40 a.m. 10:00 a.m. 12:00 p.m. 12:00 p.m. 12:00 p.m. 12:00 p.m. 3:00 p.m. 3:20 p.m. 5:45 p.m. 6:00 p.m. 6:05 p.m. 6:05 p.m. 6:05 p.m. 6:05 p.m 6:05 p.m. 6:20 p.m. 6:30 p.m. 6:30 p.m. 6:30 p.m. 6:30 p.m. 6:30 p.m. 7:00 p.m. 7:00 p.m. 7:00 p.m. 7:00 p.m. 7:00 p.m. 7:30 p.m. 8:00 p.m.
Companion Tour Registration—Main Lobby (H) History Committee Meeting—Meeting Room 2 (H) Awards Committee Meeting and Lunch—Meeting Room 3 (H) Science Educators’ Workshop—Meeting Room 6 (H) Gaede Langmuir Award Lecture, D. Menzel, Fritz-Haber Insitut and Techn Univ. of Muenchen, Germany—21 (CC) Vacuum Technology Division Business Meeting—14 (CC) Session Coffee Break—West Exhibit Hall (CC) Chapters, Divisions, and Groups Meeting and Lunch—Meeting Room 5 (H) Exhibit Hall Lunch—West Exhibit Hall (CC) Job Information Forum and Lunch—Salon E (H) Science Educators’ Workshop Lunch—Meeting Room 7 (H) Marketing and Communications Committee Meeting—Greco Ballroom (H) Session Refreshment Break—West Exhibit Hall (CC) Magnetic Interfaces and Nanostructures Division Business Meeting—16 (CC) Poster Session and Refreshments—Central Exhibit Hall (CC) Electronic Materials and Processing Division Business Meeting—9 (CC) Nanometer-scale Science and Technology Business Meeting—12 (CC) Plasma Science and Technology Division Business Meeting—24 (CC) Surface Science Division Business Meeting—22 (CC) Thin Film Division Business Meeting—11 (CC) Electronic Materials and Processing Division Forum: Moore’s Law and Careers at Intel—9 (CC) Chapter, Divisions, and Groups Committee Meeting and Dinner—IL Terrazzo Restaurant (H) Manufacturing Science and Technology Group Committee Meeting and Dinner—Meeting Room 7 (H) MEMS and NEMS Technical Group Executive Committee Meeting and Dinner—Meeting Room 1 (H) Magnetic Interfaces and Nanostructures Division Executive Committee Meeting and Dinner—Meeting Room 3 (H) Nanometer-scale Science and Technology Division Meeting and Dinner—Meeting Room 5 (H) Biomaterial Interfaces Division Executive Committee Meeting and Dinner and Biointerphases Editorial Board Meeting and Dinner—TBD (Offsite) Electronic Materials and Processing Division Executive Committee Meeting and Dinner—Meeting Room 2 (H) Plasma Science and Technology Executive Committee Meeting and Dinner—Meeting Room 6 (H) Surface Science Division Executive Committee Meeting and Dinner—Meeting Room 8 (H) Thin Film Division Executive Committee Meeting and Dinner—Meeting Room 4 (H) Applied Surface Science Division Business Meeting—Florida Ballroom I-III (H) ASTM E-42/ASSD Workshop, “XPS and Beyond: ISS, UPS, HIM, APT, and Other TLAs (Three Letter Acronyms)”—Florida Ballroom V (H)
10:00 a.m.-5:30 p.m. 10:20 a.m.-10:40 a.m. 12:00 p.m.-2:00 p.m. 3:20 p.m.-4:00 p.m.
Equipment Exhibition................................................................................................. West Exhibit Hall (CC) Exhibitors & Manufacturers Technology Spotlight.................................................... West Exhibit Hall (CC) Exhibitors & Manufacturers Technology Spotlight.................................................... West Exhibit Hall (CC) Exhibitors & Manufacturers Technology Spotlight.................................................... West Exhibit Hall (CC)
CC = Tampa Convention Center H = Tampa MarriotWaterside Hotel & Marina
TUESDAY SHORT COURSES 8:30 a.m. 8:30 a.m. 8:30 a.m. 8:30 a.m. 8:30 am.
Fundamentals of Vacuum Technology Focused Ion Beams (FIB) and Secondary Ion Mass Spectrometry (SIMS) A Comprehensive Course on Surface Analysis and Depth Profiling by X-Ray Photoelectron Spectroscopy (XPS or ESCA), Auger Electron Spectroscopy (AES), Focused Ion Beam Analysis (FIB) and Secondary Ion Mass Spectroscopy (SIMS) Plasma Etching & RIE: Fundamentals Photolithography Process in IC Production
LOCATION: COURSE HOURS:
All AVS Short Courses will be held at – Tampa Convention Center All AVS Short Course Hours: 8:30 a.m. – 5:00 p.m. – with 1.5 hour break for Lunch (Lunch not included)
101
Tuesday Morning, October 30, 2012
8:00 am
8:20 am
8:40 am
Actinides and Rare Earths Focus Topic Room: 6 - Session AC+EN-TuM
Applied Surface Science Room: 20 - Session AS+BI-TuM
Energetic Materials Issues for Nuclear Power: Fuels, Corrosion and Waste Disposal
Practical Surface Analysis
Moderator: J.G. Tobin, Lawrence Livermore National Laboratory
Moderators: A. Belu, Medtronic, Inc., D.L. Pugmire, Los Alamos National Laboratory
AC+EN-TuM1 Invited
AS+BI-TuM1 Invited
KENNEDY, R.D. MARIANI, D.L. PORTER, S.L. HAYES, H.J.M. CHICHESTER, Idaho National Laboratory, A.E. WRIGHT, Y.S. KIM, A.M. YACOUT, G.L. HOFMAN, Argonne National Laboratory, R.P. OMBERG, D.J. SENOR, Pacific Northwest National Laboratory
Germany
Invited talk continued.
Invited talk continued.
AC+EN-TuM3 Invited
AS+BI-TuM3 The Application of XPS to the Study of Protein Lyophilizates, S.J. COULTAS, J.D.P. COUNSELL, A.J. ROBERTS, S.J. HUTTON, C.J. BLOMFIELD, Kratos Analytical Ltd, UK, R. GEIDOBLER, G. WINTER, Ludwig-Maximilians-University, Germany
Novel Concepts for Enhanced Metallic Nuclear Fuel Performance, J.R.
Clinical Application of Surface Analysis Technologies – Needs, Requirements and Challenges, J. SCHNEKENBURGER, Muenster University,
Low Temperature Oxidation of Plutonium: A Mott-Cabrera Mechanism, P. ROUSSEL, AWE, UK, A.J. NELSON, Lawrence Livermore National Laboratory
9:00 am
Characterization of Real-World Surfaces and Interfaces of Devices in the Biomedical Industry, W. THEILACKER, A. BELU, L. LOHSTRETER,
Invited talk continued.
AS+BI-TuM4
L. LAGOO, Corporate Technology and Innovation, Medtronic, Inc.
9:20 am
9:40 am
AC+EN-TuM5 Investigation of “Blistering” of LEU-10Mo/Zr Reactor Foils, D.L. BLANCHARD, J.M. BILLING, M.R. SMOOT, M. PEREIRA, D.E. BURKES, Pacific Northwest National Laboratory
Ageing Processes Occurring on Nanoscaled Aminated Surfaces as Observed by ToF-SIMS/PCA, NEXAFS Spectroscopy and XPS, W.E.S. UNGER, BAM Federal Inst. for Materials Res. and Testing, Germany, H. MIN, AS+BI-TuM5
BAM Federal Inst. for Materials Res. and Testing and KAIST Korea, S. SWARAJ, BAM Federal Inst. for Materials Res. and Testing and Soleil Synchrotron France, P.-L. GIRARDLAURIAULT, BAM Federal Inst. for Materials Res. and Testing and McGill Univ. Toronto, A. LIPPITZ, BAM Federal Inst. for Materials Res. and Testing, Germany AS+BI-TuM6 Signature Discovery in Explosives and Bioagents using Imaging Mass Spectrometry, C.M. MAHONEY, Pacific Northwest National Laboratory
AC+EN-TuM6 The Sputtering Yields of Depleted Uranium and Uranium Carbide Bombarded and Alloyed by Either 30 keV Gallium or 16 keV Cesium Ions, W.J. SIEKHAUS, N.E. TESLICH, P.K. WEBER, Lawrence Livermore National Laboratory
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
AC+EN-TuM9 Actinide Subsurface Chemistry in Waste Isolated Pilot Plant, AS+BI-TuM9 Topography and Field Effects in the Inner Side of Micro via Recent Development, M. BORKOWSKI, J.-F. LUCCHINI, M.K. RICHMANN, D.T. Hole using ToF-SIMS, J.C. LEE, Y.K. KYOUNG, I.Y. SONG, Samsung Advanced REED, Los Alamos National Laboratory
Institute of Technology, Republic of Korea, S. IIDA, Ulvac Phi, Japan
11:00 am
AC+EN-TuM10 XPS Study of Uranium Oxides with Various Precipitating Agents, K.S. HOLLIDAY, Lawrence Livermore National Laboratory, J. PLAUE, University of Nevada, Las Vegas, W.J. SIEKHAUS, A.J. NELSON, Lawrence Livermore National Laboratory
AS+BI-TuM10 Using XPS to Probe the Surface Chemistry of Ionic Liquids, J.D.P. COUNSELL, S.J. COULTAS, A.J. ROBERTS, S.J. HUTTON, C.J. BLOMFIELD, Kratos Analytical Ltd., UK
11:20 am
AC+EN-TuM11
Comparison by Ionic Transport Techniques between Europium/Terbium and Americium/Berkelium Trivalent Ions, H. LATROUS,
AS+BI-TuM11 XPS Profiling and Work Function Mapping of a Damaged Solar Cell, B. STROHMEIER, Thermo Fisher Scientific, P. MACK, T.S. NUNNEY, J.
Faculté des Sciences de Tunis – Tunisia, R. BESBES, Sfax Preparatory Engineering Institute, Tunisia
WOLSTENHOLME, Thermo Fisher Scientific, UK
11:40 am
Application of XPS Imaging Analysis in Understanding of Interfacial Delamination and Related Problems, H. PIAO, General Electric
AS+BI-TuM12
Global Research Center, N. FAIRLEY, Casa Software Ltd, UK, J. WALTON, The University of Manchester, UK
102
Tuesday Morning, October 30, 2012 Biomaterial Interfaces Room: 23 - Session BI+SS+AS-TuM
Electronic Materials and Processing Room: 9 - Session EM-TuM Electrical Testing and Defects in III-V’s
Biomolecules at Interfaces
Moderator: P. Kingshott, Swinburne University of Technology, Australia 8:00 am
BI+SS+AS-TuM1 An Atomic Force Microscopy Based Method for the Determination of Protein Stability, O. CROAD, Univeristy of Nottingham, UK, S.
EM-TuM1 Invited
Characterization, Modeling and Control of Fermi Level Pinning Phenomena at III-V High-k MOS Gate Stack Interfaces, H. HASEGAWA,
RIGBY-SINGLETON, Molecular Profiles Ltd., UK, C.J. ROBERTS, D.J. SCOTT, P.M. WILLIAMS, S. ALLEN, University of Nottingham, UK
8:20 am
Moderators: E.M. Vogel, Georgia Institute of Technology, E.X. Zhang, Vanderbilt University
Hokkaido University and RIKEN, Japan
Computer Simulation of Water-Mediated Adhesion between Organic Surfaces, A.J. PERTSIN, M.H. GRUNZE, University of Heidelberg,
BI+SS+AS-TuM2
Invited talk continued.
Germany
8:40 am
BI+SS+AS-TuM3 Invited EM-TuM3 An Investigation into the Origin of Anomalous Frequency Adsorption from Saliva - Properties of Adsorbed Layers and Comparison Dispersion in Accumulation Capacitance of MOS Devices on III-V with Other Systems, T. ARNEBRANT, L. LINDH, J. SOTRES, Malmö University, Substrates, R.V. GALATAGE, D.M. ZHERNOKLETOV, H. DONG, B. BRENNAN, C.L. Sweden
HINKLE, R.M. WALLACE, University of Texas at Dallas, E.M. VOGEL, Georgia Institute of Technology
9:00 am
Invited talk continued.
EM-TuM4 Evaluation of Atomic Layer Deposited High-k Dielectrics on GaAs, H.J. LIM, Y.J. CHOI, S.H. LEE, Seoul National University, Republic of Korea, J.H. KU, N.I. LEE, Samsung Electronics Co. Ltd., Republic of Korea, H.J. KIM, Seoul National University, Republic of Korea
9:20 am
BI+SS+AS-TuM5 Zwitterionic Polymer Brushes with Clickable Functionality for Specific Binding and Nonspecific Repulsion, S. CALDER, H. ZUILHOF,
EM-TuM5 Invited
Wageningen University, Netherlands
High Energy XPS and Electrical Characterisation Studies of Metal Oxide Semiconductor Structures on Si, GaAs and InGaAs, G.J. HUGHES, L.A. WALSH, Dublin City University, Ireland, P.K. HURLEY, J.H. LIN, Tyndall National Laboratory, Ireland, J.C. WOICIK, National Institute of Standards and Technology
9:40 am
BI+SS+AS-TuM6 Von Willebrand Factor A1 Domain Structure and Function Changes on Surfaces, E. TRONIC, W. THOMAS, D.G. CASTNER, University of
Invited talk continued.
Washington
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
BI+SS+AS-TuM9 Invited EM-TuM9 Metastable Centers and Localized States in AlGaN/AlN/GaN Combining Catalysis and Self-Assembly: Towards Evolvable Soft Matter, Heterostructures Studied by C-V, Admittance Spectroscopy, and DLTS,
11:00 am
R. ULIJN, University of Strathclyde, UK
A.Y. POLYAKOV, N.B. SMIRNOV, A.V. GOVORKOV, E.A. KOZHUKHOVA, Institute of Rare Metals, Russian Federation, S.J. PEARTON, F. REN, L. LU, University of Florida, S.Y. KARPOV, Soft-Impact, Ltd, Russian Federation, W. LIM, Samsung LED, Republic of Korea
Invited talk continued.
EM-TuM10 Characterizations of Proton-irradiated GaN and 4H-SiC by KOH Etching, H.-Y. KIM, Korea University, Y.J. SHIN, W. BAHNG, Korea Electrotechnology Research Institute, J. KIM, Korea University
11:20 am
Bio/Nano Interfaces of De Novo Design: Small Proteins with Large Potential, M.G. RYADNOV, National Physical Laboratory, UK
BI+SS+AS-TuM11
EM-TuM11 Invited
Trapping Centers in High -k Dielectrics for MOS Devices, P. LENAHAN, Pennsylvania State University
11:40 am
BI+SS+AS-TuM12 Application of CD and SRCD Techniques to the Study of Protein/Nanoparticle Complexes, G. CECCONE, S. LAERA, L. CALZOLAI, D.
Invited talk continued.
GILLILAND, EC-JRC-IHCP, Italy, R. HUSSEIN, G. SILIGARDI, Diamond Light Source, UK, F. ROSSI, EC-JRC-IHCP, Italy
103
Tuesday Morning, October 30, 2012 Energy Frontiers Focus Topic Room: 15 - Session EN+TF-TuM
Exhibitor Technology Spotlight Room: West Hall - Session EW-TuM
Chalcogenide Solar Cells II
Exhibitor Technology Spotlight
Moderator: H.W. Hillhouse, University of Washington 8:00 am
Moderator: D. Surman, Kratos Analytical Inc.
EN+TF-TuM1 Invited
Thin Film Solar Cells: Present Status and Future Prospects, C.S. FEREKIDES, University of South Florida
8:20 am
8:40 am
Invited talk continued.
EN+TF-TuM3 Invited
Materials and Process Options for Cu(InGa)Se2 Thin Film Solar Cells, W.N. SHAFARMAN, University of Delaware
9:00 am
9:20 am
Invited talk continued.
EN+TF-TuM5 Invited
Why Are We Making CIGS Solar Cells from Cu-poor Material?, S. SIEBENTRITT, University of Luxembourg
9:40 am
Invited talk continued.
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
EW-TuM7 ORION Nanofab: Fabricating sub 10 nm Nanostructures using the Helium Ion Microscope, D. ELSWICK, Carl Zeiss
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
EW-TuM8
AM-FM and Loss Tangent Imaging–Two New Tools for Quantitative Nanomechanical Properties, R. PROKSCH, I. REVENKO, S. HOHLBAUCH, J. CLEVELAND, N. GEISSE, A. MOSHAR, J. BEMIS, C. CALLAHAN, K. JONES, Asylum Research
10:40 am
EN+TF-TuM9 ZnxCd1-xS Thin Films for Chalcopyrite Solar Cells Deposited through Batch and Continuous-Flow Chemical Bath Deposition, B.S. TOSUN, C. PETTIT, S.A. CAMPBELL, E.S. AYDIL, University of Minnesota
11:00 am
11:20 am
11:40 am
Selenization of Cu-Ga-In Precursors for Synthesis of CIGS Absorbers: Equilibrium and Kinetic Studies, C. MUZZILLO, R. KRISHNAN,
EN+TF-TuM10
University of Florida, W.K. KIM, Yeungnam University, Republic of Korea, E.A. PAYZANT, Oak Ridge National Laboratory, Y.H. SOHN, B. YAO, University of Central Florida, J. SHEN, General Research Institute for Non-ferrous Metals of Beijing, China, C. CAMPBELL, National Institute of Standards and Technology, T.J. ANDERSON, University of Florida EN+TF-TuM11 Fabrication of CuIn1-xGaXS2 Thin-Film Solar Cells on Single Layer Molybdenum, A. KAUL, E. SCHNELLER, N. SHIRADKAR, S. PETHE, N. DHERE, Florida Solar Energy Center, University of Central Florida
EN+TF-TuM12 Investigation of Elemental Composition for Cu(InGa)Se2 Thin Films by Various Analytical Techniques, J.H. LEE, S.H. KIM, J.-H. YOON, S.-O. WON, Y.H. LEE, Korea Institute of Science and Technology, Republic of Korea
104
Tuesday Morning, October 30, 2012 Graphene and Related Materials Focus Topic Room: 13 - Session GR+AS+EM+MI+MN-TuM
In Situ Microscopy and Spectroscopy Focus Topic Room: 7 - Session IS+AS+SS+EN-TuM
Optical, Magnetic, Mechanical and Thermal Properties
In Situ Spectroscopic Studies of Catalysis and Gas-Solid Reactions
Moderator: K.I. Bolotin, Vanderbilt University 8:00 am
Characterization of Magnetically Tunable Iron Nanorod Coated Graphene Nanoplatelets, S.D. JOHNSON, M.H. GOWDA, S.-F. GR+AS+EM+MI+MN-TuM1
CHENG, N.Y. GARCES, B. FEIGELSON, F.J. KUB, C.R. EDDY, JR., U.S. Naval Research Laboratory
8:20 am
GR+AS+EM+MI+MN-TuM2 Dynamical Origin of Blue Photoluminescence from Graphene Oxide, A.L. EXARHOS, M.E. TURK, P.M. VORA, J.M. KIKKAWA,
Moderator: B. Roldan Cuenya, University of Central Florida IS+AS+SS+EN-TuM1 Invited
Ambient Pressure XPS for Alternative Energy Research and Environmental Science, H. BLUHM, Lawrence Berkeley National Laboratory
Invited talk continued.
University of Pennsylvania
8:40 am
9:00 am
In Situ Soft X-ray Photon-in/Photon-out Spectroscopy of Photo-electrochemical Reactions of Hematite in Water Splitting, J.H.
GR+AS+EM+MI+MN-TuM3 Invited
IS+AS+SS+EN-TuM3
California, Riverside
GUO, Lawrence Berkeley National Laboratory, A. BRAUN, Empa, Swiss Federal Laboratories for Materials Science and Technology, K. SIVULA, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland, D. BORA, Lawrence Berkeley National Laboratory, J.-H. ZHU, L. ZHANG, University of Science and Technology of China, M. GRÄTZEL, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland, E.C. CONSTABLE, University of Basel, Swtizerland
Invited talk continued.
IS+AS+SS+EN-TuM4
Spin-Transport and Magnetism in Graphene, R. KAWAKAMI, University of
XANES and Ambient Pressure XPS (APXPS) Study: Investigations of the Local Structure and Final-State Effect in Partially Reduced SnOx Nanoislands on Pt(111), S. AXNANDA, Z. LIU, B. MAO, Lawrence Berkeley National Laboratory
9:20 am
9:40 am
Columbia University
Epitaxial Strontium Substituted Lanthanum Cobalt Oxides Investigated using In Situ Ambient Pressure X-ray Photoelectron Spectroscopy Near Operating Conditions Under Applied Potentials, E.
Invited talk continued.
CRUMLIN, E. MUTORO, Massachusetts Institute of Tech., Z. LIU, Lawrence Berkeley National Lab, M.D. BIEGALSKI, Oak Ridge National Lab, W.T. HONG, Massachusetts Institute of Tech., H.M. CHRISTEN, Oak Ridge National Lab, H. BLUHM, Lawrence Berkeley National Lab, Y. SHAO-HORN, Massachusetts Institute of Tech. IS+AS+SS+EN-TuM6 Probing Nitrogen and Metal Speciation in Non-
GR+AS+EM+MI+MN-TuM5 Invited
IS+AS+SS+EN-TuM5
Probing Few-Layer Graphene by Optical Spectroscopy, T.F. HEINZ,
Platinum Electrocatalysts by Ambient Pressure X-ray Photoelectron Spectroscopies and DFT Calculations, K. ARTYUSHKOVA, B. HALEVI, A.
SEROV, The University of New Mexico, B. KIEFER, New Mexico State University, P. ATANASSOV, The University of New Mexico 10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
GR+AS+EM+MI+MN-TuM9 A “How To” for Magnetic Carbon, H. OHLDAG, SLAC National Accelerator Laboratory, E. ARENHOLZ, T. TYLISZCZAK, Lawrence Berkeley National Laboratory, D. SPEMANN, R. HOEHNE, P. ESQUINAZI, M. UNGURENEAU, T. BUTZ, University of Leipzig, Germany
IS+AS+SS+EN-TuM9
11:00 am
11:20 am
11:40 am
GR+AS+EM+MI+MN-TuM10 From Graphene to Amorphous Carbon by Sublimation and Condensation, B. STEELE, R. PERRIOT, V. ZHAKHOVSKY, I.I.
Resolving Growth of Palladium Nanocatalysts Using In Situ FT-IR, XAS and PDF under Practical Atomic Layer Deposition Conditions, Y. LEI, J. LU, B. LIU, H. ZHAO, J. GREELEY, P. CHUPAS, J. MILLER, J.W.
ELAM, Argonne National Laboratory
IS+AS+SS+EN-TuM10 Invited
OLEYNIK, University of South Florida
Catalyst Characterization using In Situ XAS and XPS: From Nanoparticles Synthesis to Evolution of Structural/Electronic Properties under Reaction Conditions, A.M. KARIM, Pacific Northwest National Laboratory
GR+AS+EM+MI+MN-TuM11 Invited
Invited talk continued.
Invited talk continued.
IS+AS+SS+EN-TuM12 In Situ Study of the Oxidation of CO over Ir(111), J. KNUDSEN, Lund University, Sweden, Y. MONYA, Keio University, Japan, J. SCHNADT, M.A. ARMAN, E. GRÅNÄS, Lund University, Sweden, H. KONDOH, Keio University, Japan, J.N. ANDERSEN, Lund University, Sweden
Graphene Mechanics and NEMS Applications, J.C. HONE, Columbia University
105
Tuesday Morning, October 30, 2012 Nanomanufacturing Science and Technology Focus Topic Room: 16 - Session NM+MS-TuM All Invited Session: Challenges of Nanomanufacturing from an Industrial Perspective
MEMS and NEMS Room: 10 - Session MN-TuM Optomechanics and Photonic MEMS and NEMS
Moderator: W.K. Hiebert, University of Alberta and The National Institute for Nanotechnology 8:00 am
8:20 am
8:40 am
Moderators: S. Butler, Texas Instruments, B.R. Rogers, Vanderbilt University
MN-TuM1 Invited
NM+MS-TuM1 Invited
LONCAR, Harvard University
SEKIGUCHI, Tokyo Electron Limited
Invited talk continued.
Invited talk continued.
Optical Actuation of Photonic Crystal Nanocavities and Membranes, M.
Challenges of Nanomanufacturing from an Industrial Perspective, A.
MN-TuM3 Invited
Focused Ion Beam Fabrication for Nanophotonics and Microsystems Integration, I.W. JUNG, Argonne National Laboratory
9:00 am
Invited talk continued.
NM+MS-TuM4 Invited
9:20 am
MN-TuM5 Nanomechanical Resonator Detection using Racetrack Resonator Structures for Use in Mass Sensing, V.T.K. SAUER, Z. DIAO, M.R.
PRINT® Nanomanufacturing Technology-Precisely Engineered Particles for Life Science Applications, M. HUNTER, Liquidia Technologies, INC.
Invited talk continued.
FREEMAN, W.K. HIEBERT, University of Alberta and The National Institute for Nanotechnology, Canada
9:40 am
Fabrication and Characterization of Ultra-Fast ElectrostaticallyActuated Surface Micro-Machined Aluminum Mirrors, J.R. FOX, A.D.
MN-TuM6
MATHIAS, J.P. CORTES, M.S. ALLEN, S.B. HOROWITZ, Ducommun Miltec, M.G. TEMMEN, M. SANGHADASA, U.S. Army Aviation and Missile Research Development and Engineering Center 10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
MN-TuM9 A Comparison of Different Releasing Methods in Fabricating Nano-Optomechanical Devices, Z. DIAO, National Institute for Nanotechnology,
NM+MS-TuM9 Invited
11:00 am
11:20 am
NRC Canada and University of Alberta, Canada, V.T.K. SAUER, J.E. LOSBY, M.R. KAN, M.R. FREEMAN, University of Alberta and The National Institute for Nanotechnology, Canada, W.K. HIEBERT, National Institute for Nanotechnology, NRC Canada and University of Alberta, Canada MN-TuM10 Optomechanical Experiments with Large Area Graphene Membranes, V.P. ADIGA, R.A. BARTON, I.R. STORCH, B.R. ILIC, C.B. WALLIN, P.L. MCEUEN, J.M. PARPIA, H.G. CRAIGHEAD, Cornell University
High Productivity Combinatorial R&D Technologies for Cost-Effective Nanomanufacturing, D. LAZOVSKY, Intermolecular, Inc.
Invited talk continued.
MN-TuM11 Optomechanics of Graphene Resonators, R.A. BARTON, I.R. STORCH, V.P. ADIGA, R. SAKAKIBARA, B.R. CIPRIANY, B.R. ILIC, S. WANG, P. ONG, P.L. MCEUEN, J.M. PARPIA, H.G. CRAIGHEAD, Cornell University
11:40 am
106
Tuesday Morning, October 30, 2012 Nanometer-scale Science and Technology Room: 12 - Session NS+EN-TuM
Plasma Science and Technology Room: 24 - Session PS1-TuM
One-Dimensional Nanowires and Nanotubes
Plasma Diagnostics, Sensors and Control 1
NS+EN-TuM1 Direct Observation of Selective Band Engineering of an Isolated Subnanometer Wire, I. SONG, D.-H. OH, C.-Y. PARK, J.R. AHN,
PS1-TuM1 Invited
Moderator: M.C. Hersam, Northwestern University 8:00 am
Moderator: V. Nagorny, Mattson Technology
Monitoring Plasma Etch Processes with Wave Cut-Off, Langmuir, and Radio-Frequency Probes, M.A. SOBOLEWSKI, National Institute of Standards and
Sungkyunkwan University, Republic of Korea
Technology (NIST)
8:20 am
NS+EN-TuM2 Growth of ZnO Nanowires on Retroreflector Microspheres and the Resulting Plasmonic Light Channeling Properties, S.M. PROKES,
Invited talk continued.
O.J. GEMBOCKI, E. CLEVELAND, Naval Research Laboratory
8:40 am
9:00 am
NS+EN-TuM3 Optical and Electrical Characteristics of Al-doped ZnO Nanowires Grown by Chemical Vapor Deposition, G. SHEN, N. DAWAHRE, J.
PS1-TuM3
Impact of Self-Absorption on Emission Spectral Lines for NonEquilibrium Plasma Source, E. GUDIMENKO, V. MILOSAVLJEVIC, S. DANIELS,
WATERS, J. KRAFCIK, S.M. KIM, P. KUNG, University of Alabama, Tuscaloosa
Dublin City University, Ireland
NS+EN-TuM4 Rational Defect Engineering in Silicon Nanowires, N. SHIN, M. FILLER, Georgia Institute of Technology
PS1-TuM4
Real-Time Plasma Deposition Thickness Control using In Situ Optical Emission Interferometry, D.J. JOHNSON, K.D. MACKENZIE, C.W. JOHNSON, L. MARTINEZ, Plasma-Therm LLC
9:20 am
9:40 am
NS+EN-TuM5 Ultrafast Carrier Dynamics of Si Nanowires Grown by LPCVD, A. SEYHAN, Tokyo Institute of Technology and Nigde University, Turkey Japan,
PS1-TuM5
Subsequent Temporal Change of Gaseous H and N Radical Density in Plasma after Different Processes, T. SUZUKI, A. MALINOWSKI, K.
T. ISHIKAWA, S. KOSHIHARA, M. SIMANULLANG, K. USAMI, S. ODA, Tokyo Institute of Technology, Japan
TAKEDA, H. KONDO, K. ISHIKAWA, Nagoya University, Japan, Y. SETSUHARA, Osaka University, Japan, M. SHIRATANI, Kyushu University, Japan, M. SEKINE, M. HORI, Nagoya University, Japan
NS+EN-TuM6 Selective Deposition of Germanium Nanowire Segments via a Hybrid Oxide-Stabilized/Vapor-Liquid-Solid Growth Method, C.J. HAWLEY, T. MCGUCKIN, J.E. SPANIER, Drexel University
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
NS+EN-TuM9 Invited PS1-TuM9 Experimental Implementation of Real-time Multivariable Electronics and Opto-Electronics with Semiconducting Carbon Nanotube Control of a Capacitively Coupled Plasma, Y. ZHANG, B.J. KEVILLE, C. GAMAN, A. HOLOHAN, M. TURNER, S. DANIELS, Dublin City University, Ireland Arrays, M.B. STEINER, IBM TJ Watson Research Center
11:00 am
Invited talk continued.
PS1-TuM10 Multivariable Control of a Capacitively Coupled Plasma, B.J. KEVILLE, Y. ZHANG, M. TURNER, Dublin City University, Ireland
11:20 am
NS+EN-TuM11
Observation of the Impact of Pseudospin Conservation in Carbon Nanotubes, R. TSUCHIKAWA, University of Central Florida, Z. ZHANG, X.
PS1-TuM11
GUO, J.C. HONE, Columbia University, M. ISHIGAMI, University of Central Florida
B.G. LANE, M. FUNK, L. CHEN, R. SUNDARARAJAN, J. ZHAO, Tokyo Electron America
NS+EN-TuM12 Properties and Application of Electronically Monodisperse Carbon Nanomaterials Functionalized with Nonionic Block Copolymers,
PS1-TuM12
J.-W.T. SEO, Northwestern University
Research Laboratory
11:40 am
Single and Multi-Point Ion Energy Distributions in a VHF+RF Commercial Reactor Measured by Novel In-Wafer Ion Energy Analyzer,
Characterizing Electron Beam Generated Plasmas for Plasma Processing Applications, D.R. BORIS, R. FERNSLER, S.G. WALTON, Naval
107
Tuesday Morning, October 30, 2012 Plasma Science and Technology Room: 25 - Session PS2-TuM
Advanced Surface Engineering Room: 22 - Session SE+PS-TuM
Advanced FEOL/Gate Etching 2
Pulsed Plasmas in Surface Engineering
PS2-TuM1 Gate-Silicon Etching using Evanescent Microwave Plasma for 22nm Technology Node and Beyond, A. RANJAN, S. VORONIN, H. KINTAKA, K.
SE+PS-TuM1 Invited
Moderator: J.P. Chang, University of California at Los Angeles 8:00 am
Moderator: C. Mitterer, University of Leoben, Austria
KUMAR, P. BIOLSI, Tokyo Electron Technology Center, America, LLC, R. JUNG, S. KANAKASABAPATHY, International Business Machines – Research Group, A. BANIK, IBM T.J. Watson Research Center 8:20 am
PS2-TuM2 Tracking Line Width Roughness Improvement during Gate Plasma Patterning, L. VALLIER, E. PARGON, CNRS, France, N. POSSEME, CEA,
Strong Localization of Ionization in High Power Impulse Magnetron Sputtering in Reactive and Non-Reactive Gas Environments, A. ANDERS, Lawrence Berkeley National Laboratory
Invited talk continued.
LETI, MINATEC Campus, France, L. AZARNOUCHE, CNRS, France, S.D. NEMANI, C. ROSSLEE, T. PHAM, Applied Materials Inc.
8:40 am
PS2-TuM3 Invited
Plasma Prize Talk: Grand Challenges in Etch, R. GOTTSCHO*, Lam Research
The Magnetic Field Configuration’s Effect on Plasma Parameters in High-Power Pulsed Magnetron Sputtering, H. YU, L. MENG,
SE+PS-TuM3
P. RAMAN, T.S. CHO, D.N. RUZIC, University of Illinois at Urbana Champaign
9:00 am
Plasma Generation and Transport in High-Power Pulsed Magnetron Sputtering, L. MENG, H. YU, T.S. CHO, D.N. RUZIC, University of Illinois at
Invited talk continued.
SE+PS-TuM4
Urbana Champaign
9:20 am
PS2-TuM5 Spacer Patterning for Trigate SOI Devices, S. BARNOLA, P. PIMENTA-BARROS, L. DESVOIVRES, J. PRADELLES, S. BARRAUD, CEA, LETI, MINATEC Campus, France
SE+PS-TuM5
Metallic Film Modification through the Use of Non-standard HiPIMS Waveforms, P.M. BARKER, E. LEWIN, J. PATSCHEIDER, EMPA, Switzerland
9:40 am
PS2-TuM6 Key Challenges in FinFET FEOL RIE Processing at the 14nm CMOS Node and Beyond, R.M. MARTIN, A. BANIK, J. CHANG, R. JUNG, S.
SE+PS-TuM6
HIPIMS Arc Free Reactive Sputtering of Non-Conductive and Conductive Films, R. CHISTYAKOV, B. ABRAHAM, Zond Inc/Zpulser LLC
KANAKASABAPATHY, M. KOBAYASHI, Q. LIN, B.G. MORRIS, S.C. SEO, T. STANDAERT, K. STEIN, R. SREENIVASAN, H. WANG, M. YANG, Q. YANG, Y. YIN, IBM Corporation, D.H. CHOI, R. KAMBHAMPATI, T. KWON, GLOBALFOUNDRIES 10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
PS2-TuM9 Patterning Options for 14nm Node and Beyond, Y. YIN, R. JUNG, F. LIE, M. BEARD, B.G. MORRIS, M. HARTIG, S. KANAKASABAPATHY, IBM Res. at Albany Nanotech, Y. MIGNOT, STMicroelectronics, Y. XU, C. KOAY, IBM Res. at Albany Nanotech, L. JANG, GLOBALFOUNDRIES, N. SAULNIER, J. ABDALLAH, H. CHEN, IBM Res. at Albany Nanotech, M. TAGAMI, Renesas Electonics, K. AKARVARDAR, S. AKARVARDAR, GLOBALFOUNDRIES, J. ARNOLD, T. SPOONER, M. COLBURN, IBM Res. at Albany Nanotech PS2-TuM10 High-Efficiency Downstream Plasma Processes, L. DIAO, R. ELLISTON, A. KADAVANICH, C. LEE, V. NAGORNY, H. PHANVU, O. TODOR, V. VANIAPURA, Mattson Technology
SE+PS-TuM9
11:00 am
11:20 am
PS2-TuM11 Challenges for Sub 20nm STI Etch, H. ZHOU, X. JI, S. SRINIVASAN, J. HE, X. HUA, D. HEO, J. CHOI, A. KHAN, A. AGARWAL, S. RAUF, Applied Materials Inc.
11:40 am
PS2-TuM12 High Resolution Pattern Transfer for sub 30 nm Technology Nodes by Introduction of an Advanced Dual Hard Mask Stack, J. PAUL, M.
Reactive Modulated Pulse Power Magnetron Sputtering of Molybdenum Oxides: Optical Behavior as a Function of Process Parameters, N.R. MURPHY, Air Force Research Laboratory, L. SUN, General Dynamics
Information Technology, J.T. GRANT, University of Dayton Research Institute, J.G. JONES, R. JAKUBIAK, Air Force Research Laboratory SE+PS-TuM10 Cathodic Arc Plasma of AlCr Composite Cathodes in Inert and Reactive Atmospheres, R. FRANZ, J. WALLIG, Lawrence Berkeley National Laboratory, P. POLCIK, PLANSEE Composite Materials GmbH, Germany, A. ANDERS, Lawrence Berkeley National Laboratory
RUDOLPH, S. RIEDEL, X. THRUN, C. HOHLE, Fraunhofer Center Nanoelectronic Technologies (CNT), Germany, S. WEGE, Plasway, Germany
108 * 2011 Plasma Prize Winner
Tuesday Morning, October 30, 2012 Surface Science Room: 21 - Session SS-TuM
Thin Film Room: 11 - Session TF-TuM
Surface Reactivity of Oxides
ALD Reactions and Film Properties
Moderator: A.L. Utz, Tufts University 8:00 am
Moderator: H. Kim, Yonsei University, Korea
SS-TuM1 Invited
Preparation, Characterization and Catalytic Activity of Model WO3 Catalysts, Z. DOHNALEK, Pacific Northwest National Laboratory
8:20 am
Invited talk continued.
8:40 am
SS-TuM3 EUV Photon Enhanced Oxidation of Carbonaceous Layer at a TiO2 Film Surface, N.S. FARADZHEV, J.T. YATES, JR., University of Virginia, S.B.
TF-TuM3 Invited
Growth Simulations for Atomic Layer Deposition: Adsorption, Elimination and Densification Reactions, S. ELLIOTT, M. SHIRAZI, Tyndall National Institute,
HILL, T.B. LUCATORTO, National Institute of Standards and Technology
Ireland
9:00 am
Reactions of Water with Vacuum Fracture Surfaces of SodiumAluminosilicate Glass: Effects of Composition on Reactivity, K. ADIB, J.E.
SS-TuM4
Invited talk continued.
DICKINSON, Corning Incorporated
SS-TuM5 Reactivity of Highly-hydroxylated TiO2(110) Surface Prepared via Carboxylic Acid Adsorption and Photolysis, I. LYUBINETSKY, Y.G. DU,
TF-TuM5
N.G. PETRIK, Pacific Northwest National Laboratory, N.A. DESKINS, Worcester Polytechnic Institute, Z.-T. WANG, M.A. HENDERSON, G.A. KIMMEL, Pacific Northwest National Laboratory
KNOOPS, F. ROOZEBOOM, W.M.M. KESSELS, Eindhoven University of Technology, the Netherlands
SS-TuM6 Infrared Spectroscopy of CO2 Adsorbed on TiO2(110), N.G. PETRIK, G.A. KIMMEL, Pacific Northwest National Laboratory
TF-TuM6 Growth Inhibition of Al2O3 on InGaAs by Atomic Layer Deposition, B. GRANADOS, A.J. MUSCAT, University of Arizona
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
SS-TuM9 Low-temperature Dissociation of CO2 on Ni/CeO2/Ru(0001) Model Catalyst, D.D. KONG, University of Science and Technology of China, K.-H.
TF-TuM9
9:20 am
9:40 am
Optimization of Properties of Al-doped ZnO Films Deposited by Atomic Layer Deposition, Y. WU, P.M. HERMKENS, B.W.H. VAN DE LOO, H.C.M.
Nanoindentation and Flexure Related Effects Due to Reactive Subsurface Growth of Atomic Layer Deposition Aluminum Oxide on Polyamide-6, Y. SUN, North Carolina State University, M.P. GOERTZ, J.A. PALMER,
ERNST, EMPA, Switzerland, J.-H. ZHU, University of Science and Technology of China
Sandia National Laboratories, R.P. PADBURY, J.S. JUR, North Carolina State University
11:00 am
11:20 am
11:40 am
SS-TuM10 Adsorption and Diffusion of Acetone on Rutile TiO2 (110), B. ZHANG, Y. XIA, Baylor University, J. YE, Q. GE, Southern Illinois University Carbondale, Z. ZHANG, Baylor University
TF-TuM10 The Importance of Oxygen-Induced Ripening in the Nucleation of Platinum Atomic Layer Deposition, A.J.M. MACKUS, M.A. VERHEIJEN, N.
SS-TuM11 Variations in Reactivity for Acetaldehyde and Acetic Acid with the Crystallographic Orientation of Cerium Oxide Thin Films, P.M.
TF-TuM11
ALBRECHT, D.R. MULLINS, Oak Ridge National Laboratory
ROOZEBOOM, W.M.M. KESSELS, Eindhoven University of Technology, Netherlands
LEICK, W.M.M. KESSELS, Eindhoven University of Technology, Netherlands
Plasma Assisted Atomic Layer Deposition of Pt and PtOx in High Aspect Ratio 3D Structures, I.J.M. ERKENS, M.A. VERHEIJEN, F.
SS-TuM12 The Entropies of Adsorbed Molecules, C.T. CAMPBELL, J.R.V. SELLERS, University of Washington
109
Tuesday Morning, October 30, 2012 Tribology Focus Topic Room: 19 - Session TR+BI-TuM Self Healing Coatings, Bio-Inspired Design, and Frictional Properties of Biological Materials 8:00 am
8:20 am
Vacuum Technology Room: 14 - Session VT-TuM Pumping, Gas Dynamics and Modeling
Moderators: D. Irving, North Carolina State University, M.O. Robbins, Johns Hopkins University TR+BI-TuM1 Effects of Substrate Surface Energy and Roughness in Fibrillar Friction, Y. KIM, D.H. LEE, F. LIMANTO, R. CLAUS, R.S. FEARING, R.
Moderator: L. Wang, Los Alamos National Laboratory VT-TuM1 Invited
Gas Dynamics Modelling for Particle Accelerators, O.B. MALYSHEV, STFC
MABOUDIAN, University of California Berkeley
Daresbury Laboratory, UK
TR+BI-TuM2 Invited
Invited talk continued.
Friction at Hydrogel Contact Lens Surfaces, S.S. PERRY, S. HUO, A. RUDY, University of Florida
8:40 am
Invited talk continued.
VT-TuM3 Transient Flow of Rarefied Gas through a Short Tube, F. SHARIPOV, Federal University of Parana, Brazil
9:00 am
TR+BI-TuM4 Linking Cartilage Structure, Lubrication, and Osteoarthritis, D.L. BURRIS, University of Delaware
VT-TuM4
Experimental Results and Direct Simulation Monte Carlo Modelling of a High-Performance Large-Scale Cryopump, S. VAROUTIS,
CHR. DAY, X. LUO, H. HAAS, Karlsruhe Institute of Technology, Germany, F. SHARIPOV, Federal University of Parana, Brazil
9:20 am
Development of a PhD-level course in Vacuum Science and Technology, P. EKLUND, Linköping University, Sweden
TR+BI-TuM5 Invited
VT-TuM5
Self Healing Materials: A New Approach to Make Materials Perform More Reliably under Harsh Conditions, S. VAN DER ZWAAG, M. VALEFI, S. GARCIA, M.R. DE ROOIJ, Delft University of Technology and University of Twente, the Netherlands
9:40 am
Invited talk continued.
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
TR+BI-TuM9 Surface Analytical and Tribological Characterization of Diamonlike Boundary Films Extracted from Base Mineral and Synthetic Oils, A. ERDEMIR, O.L. ERYILMAZ, Argonne National Laboratory
VT-TuM9
TR+BI-TuM10 Data-driven Model for Estimation of Friction Coefficient via Informatics Methods, E.W. BUCHOLZ, University of Florida, C.S. KONG, Iowa State
VT-TuM10 Improved Modelling and Measurement of the Rotor Temperature of Turbo-Molecular Pumps in Magnetic Fields, A. JANSEN,
University, K.R. MARCHMAN, F.-Y. LIN, W.G. SAWYER, S.R. PHILLPOT, University of Florida, K. RAJAN, Iowa State University, S.B. SINNOTT, University of Florida
KIT, IEKP, Germany, N. KERNERT, KIT, IKP, Germany, J. WOLF, KIT, IEKP, Germany
TR+BI-TuM11 Invited
VT-TuM11
11:00 am
11:20 am
11:40 am
Structure, Lateral Flow, and Self-Healing of a Bound-and-Mobile Lubricant Film, S.H. KIM, Pennsylvania State University
Invited talk continued.
A Comparison between Numerical and Analytical Models of Turbomolecular Drag Pump’s Stages, I.F. COZZA, Agilent Technologies, Italy, M. ROSE, PI-DSMC, Germany, R. ARPA, H. TELIB, Optimad Engineering S.R.L., Italy
Test of Temperature-Dependent NEG Activation and Stability of Gold-Plating in the KATRIN Experiment, W. GIL, L. BORNSCHEIN, J. WOLF,
Karlsruhe Institute of Technology, Germany
VT-TuM12 Improving the Pump Down of UHV Systems by the Additional Pumping Speed Provided by NEG Pumps, F. SIVIERO, A. BONUCCI, A. CONTE, L. CARUSO, L. VIALE, P. MANINI, SAES Getters, Italy
110
Tuesday Lunch, October 30, 2012 Exhibitor Technology Spotlight Room: West Hall - Session EW-TuL Exhibitor Technology Spotlight
Moderator: D. Surman, Kratos Analytical Inc. 12:00 pm
EW-TuL1 Selecting the Best Metrology Method for Monitoring Thin Film Deposition, T. BALLINGER, Bruker Nano
12:20 pm
EW-TuL2 Complementary Nature of XPS and Raman Techniques, R. KERSHNER, T. NUNNEY, Thermo Fisher Scientific
12:40 pm
EW-TuL3 Multi-Dimensional XPS Profiling from Thermo Fisher Scientific, A. BUSHELL, R.G. WHITE, T.S. NUNNEY, P. MACK, A.E. WRIGHT, Thermo Fisher Scientific, UK
1:00 pm
Organic Depth Profiling using XPS – Pro’s and Con’s of Different Polyatomic Species, C. BLOMFIELD, S. HUTTON, Kratos Analytical Ltd,
EW-TuL4
UK, D. SURMAN, Kratos Analytical Inc.
1:20 pm
EW-TuL5 What's New from Physical Electronics, J.F. MOULDER, Physical Electronics
1:40 pm
EW-TuL6 KolibriSensor and Tyto: New Milestones in Scanning Probe Microscopy, T. HÄNKE, Y. DEDKOV, A. PIODA, T. KAMPEN, A. THISSEN, SPECS Surface Nano Analysis GmbH, Germany
111
NOTES
112
Tuesday Afternoon, October 30, 2012 Applied Surface Science Room: 20 - Session AS+BI-TuA Surface Analysis of Materials Using Vibrational Techniques (2:00-3:20 pm)/ Multi-Technique Analysis (4:00-6:00 pm) 2:00 pm
2:20 pm
Moderators: D. Roy, National Physical Laboratory, UK, C. Szakal, National Institute of Standards and Technology AS+BI-TuA1 Vibrational Spectrum and Stability of the Long-Debated Models for the (√7×√7)R19° Phase of S/Cu(111), M. ALCANTARA
Biomaterial Interfaces Room: 23 - Session BI+AS-TuA Characterization of Biointerfaces
Moderator: L. Meagher, CSIRO Materials Science and Engineering, Australia BI+AS-TuA1 Invited
Surface Characterization Meets Cells and Proteins, B.D. RATNER, University
ORTIGOZA, M. AMINPOUR, T.S. RAHMAN, University of Central Florida
of Washington
AS+BI-TuA2 Vibrational Spectroscopy Study of Low-k/Ultra-low-k Materials on Patterned Wafers, H. TAN, J.C.K. LAM, M.Y.M. HUANG, F. ZHANG,
Invited talk continued.
Globalfoundries Singapore Pte Ltd, Singapore, H.D. SUN, Z.X. SHEN, Nanyang Technological University, Singapore, Z.H. MAI, Globalfoundries Singapore Pte Ltd, Singapore 2:40 pm
3:00 pm
AS+BI-TuA3 First-principle Investigation of the Stability and Vibrational Spectrum of MoSx Nanostructures Grown on Cu(111), M. AMINPOUR, M.
BI+AS-TuA3
Using Binary Solvent Mixtures Produces High Graft Density Poly (Ethylene Glycol) Layers, A.R. ARCOT, Aalto University, Finland, S. ZHANG,
ALCÁNTARA ORTIGOZA, T.S. RAHMAN, University of Central Florida
R.L. MEYER, R. OGAKI, Aarhus University, Denmark, P. KINGSHOTT, Swinburne University of Technology, Australia
AS+BI-TuA4 UV-Raman Microscopy on the Analysis of Ultra-Low-k Dielectric in Multilayer IC Devices, Y.M. HUANG, J.C.K. LAM, T.H. NG, D.D.
BI+AS-TuA4 Adsorption Behavior of Serum Albumin on Nanocrystalline Apatites, K. FEARS, D. BURDEN, C. LOVE, U.S. Naval Research Laboratory, D. DAY, Missouri University of Science and Technology, T. CLARK, U.S. Naval Research Laboratory
WANG, Z.H. MAI, Globalfoundries Singapore Pte Ltd, H.D. SUN, Z.X. SHEN, Nanyang Technological University, Singapore
3:20 pm
BREAK
BREAK
3:40 pm
BREAK
BREAK
AS+BI-TuA7 Invited
NIH
BI+AS-TuA7 Quantitative Characterization of Cells in Biofilms and on Surfaces, A.C. AREIAS, C. SOUSA, G.P. MENDES, University of Minho, Portugal, P. MACK, Thermo Fisher Scientific, UK, S. LANCEROS-MÉNDEZ, University of Minho, Portugal, D.Y. PETROVYKH, International Iberian Nanotechnology Laboratory, Portugal
Invited talk continued.
BI+AS-TuA8
4:00 pm
4:20 pm
Visualizing Cells and Viruses at Molecular Resolution: Progress, Challenges and Future Prospects, S. SUBRAMANIAM, National Cancer Institute,
Antimicrobial Multilayers and Their Analysis by Laser Desorption Postionization Mass Spectrometry, M. BLAZE, C. BHARDWAJ, A.
AKHMETOV, L. HANLEY, University of Illinois at Chicago
4:40 pm
5:00 pm
AS+BI-TuA9 New Desorption Mass Spectrometry Approaches for Inorganic Particle Analysis, C. SZAKAL, A.R. KONICEK, M. UGELOW, D.S. SIMONS, A. HERZING, R.D. HOLBROOK, National Institute of Standards and Technology
Combining Colloidal Probe Atomic Force and Reflection Interference Contrast Microscopy to Study the Mechanics of Biopolymer Films, R.P. RICHTER, CIC biomaGUNE, Spain; Joseph Fourier University, France; Max
AS+BI-TuA10 TOF SIMS Analyses of Ga Concentration as a Function of Distance from FIB Milled Features, C. SANTEUFEMIO, University of
Planck Institute for Intelligent Systems, Germany, S. ATTILI, CIC biomaGUNE, Spain; Max Planck Institute for Intelligent Systems, Germany, V. BORISOV, Institut Pluridisciplinaire de Recherche sur l’Environnement et les Materiaux, France BI+AS-TuA10 Surface Modification of Silicone Hydrogels through Adsorption of Diblock Copolymers, Y.J. HUO, S.S. PERRY, University of Florida
BI+AS-TuA9
Massachusetts, B.P. GORMAN, Colorado School of Mines, C. ZHOU, F.A. STEVIE, North Carolina State University, L.A. GIANNUZZI, L.A. Giannuzzi & Associates LLC
5:20 pm
AS+BI-TuA11 The Surface Characterization of Oligo(Ethylene Glycol) Functionalized Gold Nanoparticles, A. RAFATI, D.G. CASTNER, University of
BI+AS-TuA11 Invited
Microfluidic Devices for High-Throughput Quantitation in Biology: From Biophysics to Diagnostics, S. MAERKL, Ecole Polytechnique Fédérale de Lausanne
Washington
(EPFL), Switzerland
5:40 pm
AS+BI-TuA12 Characterization Challenges of Ceria Nanoparticles: When is a Nanoparticle Not a Nanoparticle?, D.R. BAER, P. MUNUSAMY, A.S.
Invited talk continued.
KARAKOTI, EMSL, Pacific Northwest National Laboratory, S.V.N.T. KUCHIBHATLA, Battelle Science and Technology India, S.S. SEAL, University of Central Florida, S. THEVUTHASAN, C.F. WINDISCH, JR., EMSL, Pacific Northwest National Laboratory
113
Tuesday Afternoon, October 30, 2012 Electronic Materials and Processing Room: 9 - Session EM-TuA
Energy Frontiers Focus Topic Room: 15 - Session EN+TF-TuA
Materials and Processes for Advanced Interconnects
Thin Film, Heterostructured, and Organic Solar Cells
EM-TuA1 Interface Engineering of Porous and Non-Porous ILD Layers Using Molecular Layer Deposition for Interconnect Applications, J.
EN+TF-TuA1 Invited
Moderators: J. Bielefeld, Intel Corporation, S. King, Intel Corporation 2:00 pm
Moderator: M. Filler, Georgia Institute of Technology
Photonic Materials for Solar Energy Conversion at the Thermodynamic Limit, H.A. ATWATER, California Institute of Technology
BIELEFELD, Intel Corporation, H. ZHOU, P. LOSCUTOFF, Stanford University, S. CLENDENNING, Intel Corporation, S.F. BENT, Stanford University
2:20 pm
EM-TuA2 Synchrotron X-ray Scattering Investigation of Morphological Stability of Cu Thin Film Interfaces, A.P. WARREN, University of Central Florida,
Invited talk continued.
M.F. TONEY, Stanford Synchrotron Radiation Lightsource, K. BARMAK, Carnegie Mellon University, I.I. KRAVCHENKO, Oak Ridge National Laboratory, K.R. COFFEY, University of Central Florida 2:40 pm
EM-TuA3 Invited
EN+TF-TuA3 Invited
Interconnect Scaling for 10nm and Beyond, Z. TOKEI, IMEC, Belgium
Semiconducting Carbon Nanotubes as Polymer-Like Near-Infrared Bandgap Photoabsorbers, M.S. ARNOLD, D.J. BINDL, M.-Y. WU, M.J. SHEA, University of Wisconsin Madison
3:00 pm
Invited talk continued.
Invited talk continued.
3:20 pm
BREAK
BREAK
3:40 pm
BREAK
BREAK
4:00 pm
EM-TuA7 High Throughput Crystal Orientation Mapping of Nanometric EN+TF-TuA7 Understanding Vertical Stratification in Polymer:Fullerene Cu: Impact of Surface and Grain Boundary Scattering on Electrical Bulk Heterojunction Solar Cells, M.D. CLARK, Air Force Research Laboratory, M.L. Resistivity, X. LIU, Carnegie Mellon Univ., A. DARBAL, Nanomegas, K. GANESH, Univ. of JESPERSEN, University of Dayton Research Institute, B.J. LEEVER, Air Force Research
4:20 pm
4:40 pm
5:00 pm
Texas at Austin, G. ROHRER, D. CHOI, Carnegie Mellon Univ., P. FERREIRA, Univ. of Texas at Austin, B. YAO, T. SUN, A.P. WARREN, Univ. of Central Florida, M.F. TONEY, Stanford Synchrotron Radiation Lab, K.R. COFFEY, Univ. of Central Florida, K. BARMAK, Carnegie Mellon Univ. EM-TuA8 Developing Robust Ultra-Low-k Dielectric (κ≤2.55) Materials
Laboratory
C. PARKS, S. MOLIS, IBM Semiconductor R&D Ctr, E.T. RYAN, GLOBALFOUNDRIES, E. HUANG, S.M. GATES, A. GRILL, IBM T.J. Watson Res. Center, B. KIM, J.K. KIM, Samsung Electronics Co. Ltd., Korea, D. RESTAINO, T.H. LEE, IBM Semiconductor R&D Ctr, S. HOSADURGA, IBM Research Group, S.A. COHEN, IBM T.J. Watson Res. Center, K. VIRWANI, IBM Research - Almaden EM-TuA9 Reflection Electron Energy Loss Spectroscopy Investigation of Band Gap and Defect States in Low-k and High-k Dielectrics, B. FRENCH, S. KING, Intel Corporation
University of Houston
EN+TF-TuA8 Novel, Single-Crystalline-like Silicon on Low-Cost, Flexible using Novel Characterization Techniques for the 20nm Node and Substrates for High Efficiency Thin Film Photovoltaics, V. Beyond, D.R. KIOUSSIS, Z. SUN, Y. LIN, GLOBALFOUNDRIES, A. MADAN, N. KLYMKO, SELVAMANICKAM, P. DUTTA, R. WANG, Y. GAO, M. YANG, G. MAJKIC, E. GALTSYAN,
EM-TuA10 The Effects of Plasma Exposure and Vacuum-Ultraviolet Radiation on Photopatternable Low-k Dielectric Materials, M.T. NICHOLS, K.
EN+TF-TuA9 Invited
High-Efficiency Multijunction Solar Cells Employing Dilute Nitrides, V.A. SABNIS, H.B. YUEN, M. WIEMER, Solar Junction
Invited talk continued.
MAVRAKAKIS, University of Wisconsin-Madison, Q. LIN, IBM T.J. Watson Research Center, J.L. SHOHET, University of Wisconsin-Madison
5:20 pm
EM-TuA11 A Survey of Alternative Methods for Curing Porous SiCOH Films, N. LICAUSI, V. KAMINENI, GLOBALFOUNDRIES, S. OHSIEK, H. GEISLER, M.
Non-Radiative Carrier Recombination in InGaAs/GaAsP Strain-Balanced Superlattice Solar Cell, T. AIHARA, University of Miyazaki, Japan EN+TF-TuA11
WEISHEIT, M. MAJER, GLOBALFOUNDRIES, Germany, E.T. RYAN, GLOBALFOUNDRIES
5:40 pm
EM-TuA12 Metallization Challenges in Integration of Soft Dielectric Materials, R. CHEBIAM, C. JEZEWSKI, B. KRIST, H. YOO, J. CLARKE, Intel Corporation
Piezoelectric Photothermal Spectra and Carrier Nonradiative Recombination in InGaAs/GaAsP Super Lattice Structured Solar Cells, T. IKARI, T. AIHARA, Y. NAKANO, University of Miyazaki, Japan, Y. WANG, EN+TF-TuA12
M. SUGIYAMA, Y. NAKANO, University of Tokyo, Japan, A. FUKUYAMA, University of Miyazaki, Japan
114
Tuesday Afternoon, October 30, 2012 Exhibitor Technology Spotlight Room: West Hall - Session EW-TuA
Graphene and Related Materials Focus Topic Room: 13 - Session GR+AS+NS+SP+SS-TuA
Exhibitor Technology Spotlight
Graphene Characterization Including Microscopy and Spectroscopy
Moderator: D. Surman, Kratos Analytical Inc.
Moderator: J.C. Hone, Columbia University GR+AS+NS+SP+SS-TuA1 High Resolution Real and Reciprocal Space Photoelectron Emission Microscocopy on Heterogeneous Graphene/SiC(000-1), K. WINKLER, B. KROEMKER, 1Omicron NanoTechnology,
2:00 pm
Germany, N. BARRETT, IRAMIS, Saclay, France, E. CONRAD, GeorgiaTech GR+AS+NS+SP+SS-TuA2 Evidence of Nanocrystalline Semiconducting Graphene Monoxide during Thermal Reduction of Graphene Oxide in Vacuum, C. HIRSCHMUGL, E. MATTSON, H. PU, S. CUI, M. SCHOFIELD, S. RHIM, G.
2:20 pm
2:40 pm
LU, M. NASSE, University of Wisconsin Milwaukee, R.S. RUOFF, University of Texas at Austin, M. WEINERT, M. GAJDARDZISKA-JOSIFOVSKA, J. CHEN, University of Wisconsin Milwaukee GR+AS+NS+SP+SS-TuA3 Invited
3:00 pm
Invited talk continued.
Scanning Tunneling Spectroscopy of Epitaxial Graphene: Local Band Mapping and Wavefunction Engineering, P.N. FIRST, Georgia Tech
3:20 pm
EW-TuA5 NEG Pumps Improving the Performance of Vacuum Systems, B. GARCIA, E. MACCALLINI, P. MANINI, SAES Getters
BREAK
3:40 pm
EW-TuA6
New Developments in Thin Film Deposition from Kurt J. Lesker Company®, S. ARMSTRONG, D. BINGAMAN, Kurt J. Lesker Company
BREAK
4:00 pm
Intercalation of O2 an CO Controlled by the Mesoscopic Structure of Graphene, E. GRÅNÄS, J. KNUDSEN, Lund University,
GR+AS+NS+SP+SS-TuA7
Sweden, U. SCHRÖDER, T. GERBER, C. BUSSE, Universität zu Köln, Germany, M.A. ARMAN, K. SCHULTE, J.N. ANDERSEN, Lund University, Sweden, T.W. MICHELY, Universität zu Köln, Germany 4:20 pm
GR+AS+NS+SP+SS-TuA8 Long-range Atomic Ordering and Variable Interlayer Interactions in Two Overlapping Graphene Lattices with Stacking Misorientations, T. OHTA, T.E. BEECHEM, Sandia National Laboratories, J.T. ROBINSON, Naval Research Laboratory, G.L. KELLOGG, Sandia National Laboratories
4:40 pm
5:00 pm
GR+AS+NS+SP+SS-TuA9 Chemically-resolved Interface Structure of Epitaxial Graphene on SiC(0001), J.D. EMERY, Northwestern Univ., B. DETSLEFS, European Synchrotron Radiation Fac., France, H.J. KARMEL, Northwestern Univ., V.D. WHEELER, U.S. Naval Research Lab, J.M.P. ALABOSON, Northwestern Univ., L.O. NYAKITI, R.L. MYERS-WARD, C.R. EDDY, JR., D.K. GASKILL, U.S. Naval Research Lab, M.C. HERSAM, Northwestern Univ., J. ZEGENHAGEN, European Synchrotron Radiation Fac., France, M.J. BEDZYK, Northwestern Univ. GR+AS+NS+SP+SS-TuA10 Formation of Graphene on SiC( 000-1 ) in Disilane and Neon Environments, G. HE, N. SRIVASTAVA, R. FEENSTRA, Carnegie Mellon University
Characterization of Few Layer Graphene Films Grown on Cu-N i and SiC Substrates, P. TYAGI, J.D. MCNEILAN, J. ABEL, F.J.
5:20 pm
GR+AS+NS+SP+SS-TuA11
5:40 pm
NELSON, Z.R. ROBINSON, R. MOORE, A.C. DIEBOLD, V.P. LABELLA, C.A. VENTRICE, JR., University at Albany - SUNY, A.A. SANDIN, D.B. DOUGHERTY, J.E. ROWE, North Carolina State Univ., C. DIMITRAKOPOULOS, A. GRILL, C.Y. SUNG, IBM T.J. Watson Res. Center, S. CHEN, A. MUNSON, Y. HAO, C.W. MAGNUSON, R.S. RUOFF, Univ. of Texas at Austin GR+AS+NS+SP+SS-TuA12 Thickness-related Electronic Properties of Single-
layer and Few-layer Graphene Revealed by Single-pass Kelvin Force Microscopy and dC/dZ Measurements, J. YU, S. WU, Agilent Technologies, Inc.
115
Tuesday Afternoon, October 30, 2012 In Situ Microscopy and Spectroscopy Focus Topic Room: 7 - Session IS+AS+BI+ET+GR+NS-TuA In Situ Studies of Organic and Soft Materials and In Situ Microscopy
Magnetic Interfaces and Nanostructures Room: 6 - Session MI+EN+BI-TuA
IS+AS+BI+ET+GR+NS-TuA2 In Situ Real Time Examination of the Thin Film Growth of Pentacene on Polymeric Dielectrics Using X-Ray Synchrotron Radiation: Unexpected Changes in the Evolution of Surface Morphology with Substrate, T.V. DESAI, A.R. WOLL, J.R. ENGSTROM, Cornell University
Invited talk continued.
IS+AS+BI+ET+GR+NS-TuA3 Invited
MI+EN+BI-TuA3 Invited
3:00 pm
University of Debrecen, Hungary, J. KINROSS, Imperial College, UK, J. BALOG, Medimass Ltd., L. MUIRHEAD, K.C. SCHAFER, C. GUALLAR-HOYAS, Imperial College, UK Invited talk continued.
Invited talk continued.
3:20 pm
BREAK
BREAK
3:40 pm
BREAK
BREAK
4:00 pm
IS+AS+BI+ET+GR+NS-TuA7 Nanocrystal Phase Transformations in ZBLAN Glass Ceramics, J.A. JOHNSON, University of Tennessee Space Institute, C. ALVAREZ, Northwestern University, Y. LUI, Argonne National Laboratory, C.E. JOHNSON, University of Tennessee Space Institute, A. PETFORD-LONG, Argonne National Laboratory
MI+EN+BI-TuA7
2:00 pm
2:20 pm
2:40 pm
4:20 pm
4:40 pm
5:00 pm
Fundamental Problems in Magnetism Moderators: K. Artyushkova, The University of New Mexico, Moderator: G.J. Szulczewski, The University of Alabama J.A. Eastman, Argonne National Laboratory IS+AS+BI+ET+GR+NS-TuA1 Micronutrient Detection and Quantification from MI+EN+BI-TuA1 Invited Data Obtained from Plasma Pencil Atmospheric Mass Spectrometry, M.J. Spintronics – Implications for Energy, Information and Medical STEIN, E. LO, C. WATERTON, D.G. CASTNER, B.D. RATNER, University of Washington Technologies, S.D. BADER, Argonne National Laboratory and Northwestern University
In Situ, Real-Time Diagnostics of Colon Cancer and Inflammatory Bowel Multiscale Modeling for Spintronics, K.A. MEWES, T. MEWES, W.H. BUTLER, University of Alabama Diseases by Direct Combination of Endoscopy and Rapid Evaporative Ionization Mass Spectrometry, Z. TAKATS, Imperial College, UK, L.A. SASI-SZABO,
Anomalous Magneto Transport in Amorphous TbFeCo Film with Perpendicular Magnetic Anisotropy, N. ANUNIWAT, M. DING, J.
POON, S.A. WOLF, J.W. LU, University of Virginia
IS+AS+BI+ET+GR+NS-TuA8 In Situ Microscopy of Organic Film Growth: ZnPhthalocyanine on Ag(100), A. AL-MAHBOOB, J.T. SADOWSKI, Brookhaven
MI+EN+BI-TuA8 Magnetic Properties of Fe Clusters: A DFT+U vs Nano DFT+DMFT Analysis, A.K. KABIR, V. TURKOWSKI, T.S. RAHMAN, University of
National Laboratory
Central Florida
IS+AS+BI+ET+GR+NS-TuA9 In Situ Sub-Micrometer Scale Chemical Imaging MI+EN+BI-TuA9 Invited with Scanning Transmission X-ray Microscopy, S.T. KELLY, P. NIGGE, Rationally-designed Iron Oxide Nanostructures for Bioimaging, Y. BAO, Lawrence Berkeley National Laboratory, A. LASKIN, B. WANG, Pacific Northwest National Laboratory, A. TIVANSKI, S. GHORAI, University of Iowa, T. TYLISZCZAK, M.K. GILLES, Lawrence Berkeley National Laboratory
The University of Alabama
IS+AS+BI+ET+GR+NS-TuA10 Invited
Invited talk continued.
In Situ Microscopy of 2D Materials – Graphene and Beyond, P.W. SUTTER, Brookhaven National Laboratory
5:20 pm
Invited talk continued.
MI+EN+BI-TuA11 Probing the Electronic and Magnetic Properties of Bulk Materials and Buried Layers and Interfaces with Standing-Wave and Hard-X-Ray Photoemission, C.S. FADLEY, University of California, Davis
5:40 pm
IS+AS+BI+ET+GR+NS-TuA12 In Situ SEM and ToF-SIMS Imaging of Liquids for Biological Applications, L. YANG, X.-Y. YU, Z. ZHU, S. THEVUTHASAN, Pacific
MI+EN+BI-TuA12
Northwest National Laboratory, J. COWIN, Cowin In-Situ Science, L. L. C.
GONZÁLEZ-DÍAZ, O. IDIGORAS, A. BERGER, CIC nanoGUNE Consolider, Spain
3D Vector Magnetometry of Thin-Films using Generalized Magneto-Optical Ellipsometry (GME), J.A. ARREGI, J.B.
116
Tuesday Afternoon, October 30, 2012 Nanometer-scale Science and Technology Room: 12 - Session NS+EN+GR-TuA
Plasma Science and Technology Room: 24 - Session PS1-TuA
Nanomaterials in Two and Three Dimensions
Plasma Deposition and Plasma Enhanced ALD
NS+EN+GR-TuA1 Assembly of Core-Shell Superparamagnetic Nanoparticles at Liquid-Liquid Interfaces, L. ISA, ETH Zurich, Switzerland, D.
PS1-TuA1 Invited
Moderator: V.P. LaBella, University at Albany-SUNY 2:00 pm
Moderator: S. Agarwal, Colorado School of Mines
CALZOLARI, University of Fribourg, Switzerland, M. KRÖGER, E. DEL GADO, ETH Zurich, Switzerland, R. ZIRBS, BOKU Wien, Austria, T. GILLICH, E. AMSTAD, ETH Zurich, Switzerland, D. PONTONI, ESRF, France, E. REIMHULT, BOKU Wien, Austria 2:20 pm
NS+EN+GR-TuA2 Nanopatterning of SPRi Sensor Surfaces for SubNanomolar Biomarker Detection, M.A. PARRACINO, MJ. PEREZ ROLDAN, J.
Looking Down the Rabbit Hole: Impact of Porosity in Plasma-deposited Inorganic Layers on Their Moisture Permeation Barrier Performance, M. CREATORE, Eindhoven University of Technology, The Netherlands
Invited talk continued.
HANUS, V. SPAMPINATO, G. CECCONE, P. COLPO, F. ROSSI, Nanobiosciences Unit, JRC, Italy
2:40 pm
Dual Etching and Deposition Mechanism of a Microwave Alcohol Plasma on Commercial Polymers for the Enhancement of Adhesion, C.J. HALL, P.J. MURPHY, H.J. GRIESSER, University of South Australia
NS+EN+GR-TuA3 Invited
PS1-TuA3
3:00 pm
Invited talk continued.
PS1-TuA4
3:20 pm
BREAK
BREAK
3:40 pm
BREAK
BREAK
4:00 pm
NS+EN+GR-TuA7 Single Layer of MoS2 on Close-Packed Metal Surfaces, D. LE, T.S. RAHMAN, University of Central Florida
PS1-TuA7
Three-Dimensional DNA Nanostructures for Biological and Materials Applications, H. SLEIMAN, McGill University, Canada
The Roles of Ions and Neutrals in Growth Mechanisms of Plasma Polymer Films, A. MICHELMORE, University of South Australia
Defect Analysis and Mechanical Performance of Optoelectronic Thin Films Deposited on Flexible Substrates, R. PATEL, C.A. WOLDEN,
Colorado School of Mines
4:20 pm
4:40 pm
Chemically Exfoliated Two Dimensional Materials for Energy Applications, M. CHHOWALLA, Rutgers University
NS+EN+GR-TuA8 Invited
PS1-TuA8 Plasma Polymerization of Ethyl Lactate, S. LIGOT, University of Mons, Belgium, F. RENAUX, Materia Nova Research Center, Belgium, L. DENIS, University of Mons, Belgium, D. COSSEMENT, Materia Nova Research Center, Belgium, P. DUBOIS, R. SNYDERS, University of Mons, Belgium
Invited talk continued.
PS1-TuA9
Functional Carbon Contained Film Formation using NeutralBeam-Enhanced Chemical-Vapor-Deposition by Microwave Plasma, Y.
KIKUCHI, Tohoku University and Tokyo Electron, Japan, A. WADA, S. SAMUKAWA, Tohoku University, Japan
5:00 pm
5:20 pm
5:40 pm
Isolation and Surface Structure of Ultra-thin Nanosheets PS1-TuA10 Nano-crystalline Silicon Deposition using a Layer-by-layer formed by Atomic Layer Deposition, K.M. LEE, D.H. KIM, G.N. PARSONS, North Technique, Z. CHEN, M.N. ILIEV, J.A. MUCHA, University of Houston, Y.K. PU, Tsinghua
NS+EN+GR-TuA10
Carolina State University
University, China, D.J. ECONOMOU, V.M. DONNELLY, University of Houston
NS+EN+GR-TuA11
All Solution Processed InGaO3(ZnO)m Thin Films with Layered Structure and their Thermoelectric Properties, J.H. KIM, H.K. CHO,
PS1-TuA11 Role of PEALD Reactor Wall Conditions on Radical and Ion Substrate Fluxes, M.J. SOWA, M.J. SERSHEN, G. SUNDARAM, J.S. BECKER,
Sungkyunkwan University, Republic of Korea
Cambridge NanoTech, Inc.
PS1-TuA12 Tuning Material Properties in ALD ZnO Films: In Situ Plasma Treatments and Doping, M.A. THOMAS, Stetson University, J.B. CUI, University of Arkansas at Little Rock
117
Tuesday Afternoon, October 30, 2012 Plasma Science and Technology Room: 25 - Session PS2-TuA
Advanced Surface Engineering Room: 22 - Session SE+PS-TuA Atmospheric Pressure Plasmas
Plasma Surface Interaction during Plasma Etching Moderator: S. Shannon, North Carolina State University 2:00 pm
Surface Interaction Mechanisms Enabling Plasma-Enhanced Strongly Time-Dependent Etching Rates, D. METZLER, E. VOGLI, F. HILPERT,
PS2-TuA1
G.S. OEHRLEIN, University of Maryland
2:20 pm
Reactive Etching or Deposition Properties of Silicon Halide Ions in Gate Etching Processes, T. ITO, K. KARAHASHI, S. HAMAGUCHI, Osaka
PS2-TuA2
Moderators: H. Barankova, Uppsala University, Sweden, P.H. Mayrhofer, Montanuniversität Leoben, Austria SE+PS-TuA1 Invited
Plasma Medicine: The Journey of a New Field of Research, from Killing of Bacteria to Killing of Cancer Cells, M. LAROUSSI, Old Dominion University
Invited talk continued.
University, Japan
PS2-TuA3
Cl Atom Reactions on Silicon Oxy-Chloride Layers Deposited on Chamber Walls in Chlorine-Oxygen Plasmas, A.K. SRIVASTAVA,
SE+PS-TuA3
University of Houston, R. KHARE, Lam Research Corp, V.M. DONNELLY, University of Houston
MCWILLIAMS, S. HUDAK, J. CUOMO, North Carolina State University
PS2-TuA4
Molecular Dynamic Simulation of Possible Damage Formation at Vertical Walls of finFET Devices during Plasma Etching Processes, K.
SE+PS-TuA4 Atmospheric Pressure Glow Discharge for Point-of-Use Water Treatment, A. LINDSAY, B. BYRNS, S. SHANNON, D. KNAPPE, North Carolina
MIZOTANI, M. ISOBE, S. HAMAGUCHI, Osaka University, Japan
State University
3:20 pm
BREAK
BREAK
3:40 pm
BREAK
BREAK
PS2-TuA7 Invited
SE+PS-TuA7 Cold Atmospheric Plasma in Liquids, H. BARANKOVA, L. BARDOS, Uppsala University, Sweden
2:40 pm
3:00 pm
4:00 pm
VHF Atmospheric Glow Discharge: Electrical and Optical Characterization for Multiple Gases, B. BYRNS, A. LINDSAY, S. SHANNON, A.
Real time In Situ Electron Spin Resonance (ESR) Study of Free Radicals on Materials Created by Plasmas, K. ISHIKAWA, Nagoya University, Japan, H. HORIBE, Kanazawa Institute of Technology, Japan, M. ITO, Meijo University, Japan, M. SEKINE, M. HORI, Nagoya University, Japan
4:20 pm
SE+PS-TuA8 Characterization of Amorphous and Microcrystalline Si Films Grown in Atmospheric-Pressure Very High-Frequency Plasma, H.
Invited talk continued.
KAKIUCHI, H. OHMI, T. YAMADA, A. HIRANO, T. TSUSHIMA, K. YASUTAKE, Osaka University, Japan
4:40 pm
5:00 pm
PS2-TuA9
Roles of Hydrogen for Hydrofluorocarbon (HFC) Plasma Etching of Silicon Nitride (SiN), S. HAMAGUCHI, K. MIYAKE, K. MIZOTANI, M.
SE+PS-TuA9 Atmospheric Plasma Polymerization of Esters: Tuning the Coating Chemistry by Tuning the Precursor Chemistry, B. NISOL, A. BATAN,
ISOBE, T. ITO, K. KARAHASHI, Osaka University, Japan, M. FUKASAWA, T. TATSUMI, Sony Corporation, Japan
Université Libre de Bruxelles, Belgium, A. KAKAROGLOU, M. WADIKAR, G. SCHELTJENS, G. VAN ASSCHE, B. VAN MELE, I. DE GRAEVE, H. TERRYN, Vrije Universiteit Brussel, Belgium, F. RENIERS, Université Libre de Bruxelles, Belgium
PS2-TuA10 Molecular Dynamics Analysis of Si Etching with Cl and Br Beams: Ion Incident Angle and Neutral Radical Flux Dependence, N. NAKAZAKI, H. TSUDA, Y. TAKAO, K. ERIGUCHI, K. ONO, Kyoto University, Japan
5:20 pm
PS2-TuA11 Controlling Correlations Between Ion and UV/VUV Photon Fluxes in Low Pressure Plasma Materials Processing, P. TIAN, M.J. KUSHNER, University of Michigan
5:40 pm
PS2-TuA12 Formation Mechanisms of Nanoscale Surface Roughness and Rippling during Plasma Etching and Sputtering of Si under Oblique Ion Incidence, H. TSUDA, Y. TAKAO, K. ERIGUCHI, K. ONO, Kyoto University, Japan
118
Tuesday Afternoon, October 30, 2012 Scanning Probe Microscopy Focus Topic Room: 16 - Session SP+AS+BI+ET+MI+NS-TuA
Surface Science Room: 21 - Session SS+NS-TuA
Advances in Scanning Probe Imaging
Reactivity of Size and Shape Selected Nanoparticles
Moderators: S. Allen, The University of Nottingham, UK, Z. Gai, Oak Ridge National Laboratory 2:00 pm
Moderator: C.T. Campbell, University of Washington
SP+AS+BI+ET+MI+NS-TuA1 Invited
SS+NS-TuA1 Invited
IBM Research - Zurich, Switzerland
Institut, and Techn. Univ. Muenchen, Germany
2:20 pm
Invited talk continued.
Invited talk continued.
2:40 pm
SP+AS+BI+ET+MI+NS-TuA3
Molecules Investigated with Atomic Resolution using Scanning Probe Microscopy with Functionalized Tips, L. GROSS, F. MOHN, N. MOLL, G. MEYER,
Functional Imaging of Jahn-Teller Dynamics at SS+NS-TuA3 Photocatalytic Deposition of Au onto Ordered Linear Arrays the Single-molecule Scale, J. LEE, S.M. PERDUE, A. RODRIGUEZ PEREZ, P.Z. EL- of TiO2 Nanoparticles, J. TAING, A. MARGARELLA, Y. LIU, J.C. HEMMINGER,
KHOURY, V.A. APKARIAN, University of California, Irvine
3:00 pm
2012 AVS Gaede-Langmuir Award Lecture: Surface Photochemistry on Compact Crystals and on Metal Nanoparticles, D. MENZEL*, Fritz-Haber
University of California Irvine
SP+AS+BI+ET+MI+NS-TuA4 Atomic and Chemical Resolution of SS+NS-TuA4 Catalytic Activity of Gold-supported TiO2 Nanocrystals Heterogeneous 1-D Metallic Chains on Si(100) by Means of nc-AFM and Towards Simple Alcohols, D.V. POTAPENKO, Z. LI, Y. LOU, R.M. OSGOOD, Columbia University DFT, M. SETVIN, M. ONDRACEK, P. MUTOMBO, Z. MAJZIK, P. JELINEK, Institute of Physics of ASCR, Czech Republic
3:20 pm
BREAK
BREAK
3:40 pm
BREAK
BREAK
SP+AS+BI+ET+MI+NS-TuA7 Invited
SS+NS-TuA7 Invited
4:00 pm
Simple Routes to High Speed and Super Resolution AFM, J.K. HOBBS,
Structure, Chemical State, and Reactivity Investigations of Size- and Shape-Selected Nanocatalysts under Operando Conditions, B. ROLDAN
University of Sheffield, UK
CUENYA, University of Central Florida
4:20 pm
Invited talk continued.
Invited talk continued.
4:40 pm
SP+AS+BI+ET+MI+NS-TuA9 A Scanning Probe Microscopy Study of Trimesic SS+NS-TuA9 Invited Acid Self-Assembly on Highly Oriented Pyrolytic Graphite, V. KOROLKOV, Particle Size, Support and Alloying Effects in Electrocatalysis: S. ALLEN, C.J. ROBERTS, S.J.B. TENDLER, The University of Nottingham, UK Relationships with Heterogeneous Catalysis, B.E. HAYDEN, University of Southampton, UK
5:00 pm
5:20 pm
5:40 pm
SP+AS+BI+ET+MI+NS-TuA10 Understanding the Role of the Probe in SPM Imaging of Metal Oxides: New Opportunities for In-Depth Surface Analysis, H. MÖNIG, Univ. of Münster, Germany, M. TODOROVIC, Univ. Autónoma de
Invited talk continued.
Madrid, Spain, M.Z. BAYKARA, Yale Univ., T.C. SCHWENDEMANN, Southern Connecticut State Univ., J. GÖTZEN, Ö. ÜNVERDI, E.I. ALTMAN, Yale Univ., R. PEREZ, Univ. Autonoma de Madrid, Spain, U.D. SCHWARZ, Yale Univ. SP+AS+BI+ET+MI+NS-TuA11 Characterizing the Best Tips for NC-AFM
Imaging on Metal Oxides with Force Spectroscopy and Theoretical Simulations, D. FERNANDEZ-TORRE, Universidad Autónoma de Madrid, Spain, A.
The Growth and Structures of Metal Nanoparticles on Ordered ZrO2(111) Surfaces, Y. HAN, S.W. HU, Y.H. PAN, J.B. HOU, H.B. PAN, J.-
SS+NS-TuA11
H. ZHU, University of Science and Technology of China
YURTSEVER, Osaka University, Japan, P. POU, Universidad Autónoma de Madrid, Spain, Y. SUGIMOTO, M. ABE, S. MORITA, Osaka University, Japan, R. PEREZ, Universidad Autónoma de Madrid, Spain SP+AS+BI+ET+MI+NS-TuA12 Direct Probe of Interplay between Local Structure and Superconductivity in FeTe0.55Se0.45, M.H. PAN, W.Z. LIN, Q. LI, B.C. SALES, S. JESSE, A.S. SEFAT, S.V. KALININ, Oak Ridge National Laboratory
Structure and Electronic Properties of Ni Nanoparticles Supported on Reducible CeO2(111) Thin Films, Y.H. ZHOU, Xiamen University,
SS+NS-TuA12
Republic of China, J. ZHOU, University of Wyoming
119 * Gaede Langmuir Award Winner
Tuesday Afternoon, October 30, 2012 Thin Film Room: 10 - Session TF+AS-TuA
Thin Film Room: 11 - Session TF2-TuA
Modeling and Analysis of Thin Films
ALD for Hybrid Films and Bioapplications
TF+AS-TuA1 Invited
TF2-TuA1
Moderator: D. Irving, North Carolina State University 2:00 pm
2:20 pm
Moderator: S.M. Rossnagel, IBM T.J. Watson Research Center Characteristics of Nanomaterials Embedded in Atomic Layer Deposition Thin Films, J.S. JUR, P.J. KROMMENHOEK, J.C. HALBUR, North Carolina
Nanoconfined Fluids: Fundamentals and Application to Ionic-LiquidBased Supercapacitors, G. FENG, S. LI, P.T. CUMMINGS, Vanderbilt University
State University, H.O. EVERITT, Duke University, J.B. TRACY, G.N. PARSONS, North Carolina State University TF2-TuA2 ALD-Based Fabrication and Chromatographic Separations on Binder-Free, Carbon Nanotube-Templated Thin Layer Chromatography Plates, M.R. LINFORD, R.C. DAVIS, D.S. JENSEN, S. KANYAL, Brigham Young
Invited talk continued.
University, M.A. VAIL, A.E. DADSON, Diamond Analytics
2:40 pm
3:00 pm
TF+AS-TuA3 XPS Analysis of Monomolecular Films Prepared by SelfAssembly and Langmuir-Blodgett Techniques, G.G. JERNIGAN, F.K.
TF2-TuA3 Invited
PERKINS, M.G. ANCONA, A.W. SNOW, Naval Research Laboratory
JOSEPH, S.S. PAPA RAO, S.M. ROSSNAGEL, IBM Research Division, T.J. Watson Research Center
TF+AS-TuA4 The Dynamics of Atomic-Scale Transport on the Anisotropic Compound Surface TiN(001), D.G. SANGIOVANNI, V. CHIRITA, L. HULTMAN,
Invited talk continued.
DNA Nanopore Devices Facilited by ALD Materials, J. BAI, S.-W. NAM, E.A.
Linköping University, Sweden, I. PETROV, J.E. GREENE, University of Illinois at Urbana Champaign
3:20 pm
BREAK
BREAK
3:40 pm
BREAK
BREAK
TF+AS-TuA7 Invited
TF2-TuA7
4:00 pm
Multi-Method Calculations of the Thermodynamics of Film Deposition on Fuel Rods in Light Water Reactors, D.W. BRENNER, A.D. DONGARE, C.J.
Conductivity and Mechanical Stretching of Conductive ALD Coatings on Nonwoven Fiber Mats, W.J. SWEET, C.J. OLDHAM, G.N. PARSONS, North Carolina State University
O'BRIEN, North Carolina State University
4:20 pm
Invited talk continued.
TF2-TuA8 Molecular Layer Deposition of Alucones and Zincones Using Hydroquinone, Y. LEE, S.M. GEORGE, University of Colorado, Boulder
4:40 pm
TF+AS-TuA9 Toughness Enhancement in Transition Metal Nitride Thin Films by Alloying and Valence Electron Concentration Tuning, D.G.
TF2-TuA9
SANGIOVANNI, V. CHIRITA, L. HULTMAN, Linköping University, Sweden
J. KIM, The University of Texas at Dallas
TF+AS-TuA10 Non-Destructive Element Specific Density Depth Profiling by Resonant Soft X-ray Reflectometry, S. MACKE, Max Planck - UBC Centre for
TF2-TuA10
Quantum Materials, Canada, A. RADI, University of British Columbia, Canada, R. SUTARTO, Canadian Light Source, Canada, G. CHRISTIANI, G. LOGVENOV, Max-Planck-Institute for Solid State Research, Germany, G. SAWATZKY, University of British Columbia, Canada, B. KEIMER, Max-Planck-Institute for Solid State Research, Germany, V. HINKOV, Max Planck UBC Centre for Quantum Materials, Canada TF+AS-TuA11 Monte Carlo Radiation Model for Heat Transfer of Lamp for Advanced Thermal Annealing Process, K. BERA, J. RANISH, U. KELKAR, Applied Materials, Inc.
State University
5:00 pm
5:20 pm
Organic-Inorganic Hybrid Thin Films Prepared by Ozone Assisted Molecular Layer Deposition (MLD), J. HUANG, M. LEE, A.T. LUCERO,
Organic-Inorganic Hybrid Structure Formation via Sequential Vapor Infiltration, H. AKYILDIZ, M. YOKUS, R.P. PADBURY, J.S. JUR, North Carolina
Structural and Electrical Characterization of Ta2O5 /Al2O3 and ZrO2/Al2O3 Nanolaminate Films Grown by Atomic Layer Deposition (ALD), D. EWING, M. LILLY, Northrop Grumman Electronic Systems, M. THONE, TF2-TuA11
Rochester Institute of Technology, J. KELLIHER, Northrop Grumman Electronic Systems
5:40 pm
TF+AS-TuA12 First Principles Studies of Oxygen Transfer at Buried Metal/Metal Oxide Interfaces, C. GOLDSTEIN, E. MILY, J.-P. MARIA, D.W. BRENNER, D. IRVING, North Carolina State University
120
Tuesday Afternoon, October 30, 2012 Tribology Focus Topic Room: 19 - Session TR-TuA
Vacuum Technology Room: 14 - Session VT-TuA
Molecular Origins of Friction and Wear
Accelerator and Ultra-Clean Vacuum Systems
TR-TuA1 Invited
VT-TuA1 Invited
Moderator: S.S. Perry, University of Florida 2:00 pm
Moderator: L. Smart, Brookhaven National Laboratory
Area, Stiffness, Friction and Adhesion of Contacts Between Rough Surfaces, M.O. ROBBINS, L. PASTEWKA, T. SHARP, Johns Hopkins University
Design of the Vacuum System for the SuperKEKB Positron Ring, Y. SUETSUGU, K. KANAZAWA, K. SHIBATA, T. ISHIBASHI, H. HISAMATSU, M. SHIRAI, S. TERUI, High Energy Accelerator Research Organization, Japan
2:20 pm
Invited talk continued.
Invited talk continued.
2:40 pm
TR-TuA3 Crystallographic Wear Patterns in Ionic Solids, B.A. KRICK, K.R. MARCHMAN, S.B. SINNOTT, W.G. SAWYER, University of Florida
VT-TuA3 Status of the FRIB Driver Linac Vacuum Calculations, B. DURICKOVIC, P. GIBSON, P. GUETSCHOW, Michigan State University, R. KERSEVAN, CERN, Switzerland, D. LEITNER, M. LEITNER, L. LINGY, F. MARTI, G. MORGAN, M. SCHEIN, M. SHUPTAR, Michigan State University
3:00 pm
TR-TuA4 Measurements of Off-axis Friction Forces, K. KRISTIANSEN, X. BANQUY, University of California, Santa Barbara, H. ZENG, University of Alberta, Canada, E. CHARRAULT, S. GIASSON, Universite de Montreal, Canada, J.N. ISRAELACHVILI, University of California, Santa Barbara
VT-TuA4 The Conceptual Design of PXIE Vacuum System, A. CHEN, Fermi National Accelerator Laboratory
3:20 pm
BREAK
BREAK
3:40 pm
BREAK
BREAK
4:00 pm
TR-TuA7 Temperature-dependent Atomic-scale Friction and Wear on NaCl(001), X. ZHAO, S.S. PERRY, University of Florida
VT-TuA7 Invited
Contamination Control and Cleaning Techniques for Ultra Clean Vacuum Systems, H.G.C. WERIJ, N.B. KOSTER, J.C.J. VAN DER DONCK, A.J. STORM, R. VERBERK, R. VERSLUIS, TNO Technical Sciences, The Netherlands
4:20 pm
TR-TuA8 Molecular Dynamics Simulations of the Tribological Properties of C-, H-, and O-Containing Materials, J.A. HARRISON, United States Naval
Invited talk continued.
Academy, M.T. KNIPPENBERG, High Point University, P.T. MIKULSKI, K.E. RYAN, United States Naval Academy
4:40 pm
TR-TuA9 Ultra-Low Wear Nanocomposites: How Low Can We Go?, A.A. PITENIS, B.A. KRICK, J.J. EWIN, W.G. SAWYER, University of Florida
Large Thermal Vacuum Chamber for TB/TV Tests and Optical Calibration of Space Instrumentation, R. VERSLUIS, R. VERBERK, E.C. FRITZ, VT-TuA9
W.L.M. GIELESEN, TNO Science and Industry, The Netherlands
5:00 pm
5:20 pm
Direct Measurement of Friction Forces and Shear Strengths at High-Speed Microscopic Contacts using a Probe and Quartz Resonator,
B.P. BOROVSKY, St. Olaf College
VT-TuA10 A Large Seismic Attenuation System in UHV, R. TAKAHASHI, National Astronomical Observatory of Japan, Y. SAITO, High Energy Accelerator Research Organization, Japan
Isolating the Adhesive Component of Micro-Scale Rolling Friction via Vapor-Phase Lubrication, S. MISRA, B. HANRAHAN, R. GHODSSI,
VT-TuA11 Vacuum System of Cornell Energy-Recovery LINAC Prototype Injector, Y. LI, X. LIU, K.W. SMOLENSKI, I. BAZAROV, B.M. DUNHAM, Cornell University
TR-TuA10
TR-TuA11
University of Maryland, College Park
5:40 pm
Electronic Friction at the Atomic Scale: Conduction, Electrostatic and Magnetic Effects, J. KRIM, North Carolina State University, I.
TR-TuA12
ALTFEDER, Wright Patterson Air Force Laboratory
VT-TuA12 Injection Vacuum System at the TPS, C.K. CHAN, C.C. CHANG, C.L. CHEN, C.S. YANG, C. CHEN, Y.H. LIU, K.H. HSU, Y.T. HUANG, H.P. HSUEH, S.N. HSU, G.Y. HSIUNG, J.R. CHEN, NSRRC, Taiwan, Republic of China
121
Anticipated Schedule Tuesday Morning, October 30, 2012 TIME
SESSION
ROOM
8:00 am
______________________________________________________________________________________________________________________________________________
8:20 am
______________________________________________________________________________________________________________________________________________
8:40 am
______________________________________________________________________________________________________________________________________________
9:00 am
______________________________________________________________________________________________________________________________________________
9:20 am
______________________________________________________________________________________________________________________________________________
9:40 am
______________________________________________________________________________________________________________________________________________
10:00 am
______________________________________________________________________________________________________________________________________________
10:20 am
______________________________________________________________________________________________________________________________________________
10:40 am
______________________________________________________________________________________________________________________________________________
11:00 am
______________________________________________________________________________________________________________________________________________
11:20 am
______________________________________________________________________________________________________________________________________________
11:40 am
______________________________________________________________________________________________________________________________________________
12:00 pm
______________________________________________________________________________________________________________________________________________
Lunch when
______________________________________________________________________________________________________________________________________________
with
______________________________________________________________________________________________________________________________________________
where
______________________________________________________________________________________________________________________________________________
Anticipated Schedule Tuesday Afternoon, October 30, 2012 TIME
SESSION
ROOM
1:00 pm
______________________________________________________________________________________________________________________________________________
1:20 pm
______________________________________________________________________________________________________________________________________________
1:40 pm
______________________________________________________________________________________________________________________________________________
2:00 pm
______________________________________________________________________________________________________________________________________________
2:20 pm
______________________________________________________________________________________________________________________________________________
2:40 pm
______________________________________________________________________________________________________________________________________________
3:00 pm
______________________________________________________________________________________________________________________________________________
3:20 pm
______________________________________________________________________________________________________________________________________________
3:40 pm
______________________________________________________________________________________________________________________________________________
4:00 pm
______________________________________________________________________________________________________________________________________________
4:20 pm
______________________________________________________________________________________________________________________________________________
4:40 pm
______________________________________________________________________________________________________________________________________________
5:00 pm
______________________________________________________________________________________________________________________________________________
122
NOTES
123
Tuesday Afternoon Poster Sessions Applied Surface Science Room: Central Hall - Session AS-TuP
AS-TuP20 Kinetics and Mechanism Studies of Copper Nano-Structures Formation on Functionalized Si Surfaces, J.M. LIN, University of Delaware, K.A.
Applied Surface Science Poster Session 6:00 pm
AS-TuP21 Dry Cleaning Methods for Single Reconstructions of (100) InGaAs Following Air Exposure and Post Annealing Conditions, W. MELITZ, M. EDMONDS,
PERRINE, University of California, Irvine, A.V. TEPLYAKOV, University of Delaware
Sub-Micrometer Imaging of Lipids and Trace Elements in Various Cells with ToF-SIMS and Laser-SNMS, H.F. ARLINGHAUS, F. DRAUDE, S. GALLA, A.
AS-TuP1
PELSTER, M. KÖRSGEN, University of Muenster, Germany, J. TENTSCHERT, H. JUNGNICKEL, A. HAASE, A. LUCH, German Federal Institute of Risk Assessment, Germany, T. SCHWERDTLE, J. MÜTHING, University of Muenster, Germany
Comparative Study on the Methods to Determine the Interface Locations in SIMS Depth Profiling Analysis of Multilayer Films, H.H. HWANG,
AS-TuP2
T.J. KENT, A.C. KUMMEL, University of California San Diego AS-TuP22 The Effect of Gas Environment on the Electronic and Optical Properties of Amorphous Indium Zinc Tin Oxide Thin Films, Y.R. DENNY, S.Y. LEE, K.I. LEE, S.J. SEO, Chungbuk National University (CBNU), Republic of Korea, S. HEO, J.G. CHUNG, J.C. LEE, Samsung Advanced Institute of Technology, Republic of Korea, H.J. KANG, Chungbuk National University (CBNU), Republic of Korea
Modification of Metal – InGaAs Schottky Barrier Height by Atomic Layer Deposition of Ultrathin Al2O3 Interlayers, L. CHAUHAN, Dublin City University,
AS-TuP23
University of Science and Technology (UST), Republic of Korea, J.S. JANG, H.J. KANG, Chungbuk National University (CBNU), Republic of Korea, K.J. KIM, University of Science and Technology (UST), Republic of Korea
Estimation of Useful Yield of Electrospray Droplet Impact/Secondary Ion Mass Spectrometry, R. TAKAISHI, K. HIRAOKA, University of Yamanashi, Japan AS-TuP4 Multivariate Analysis Models to Predict Surface Chemistry or Performance using ToF-SIMS Mass Spectra Datasets, N. SANO, M.-L. ABEL, J.F.
AS-TuP3
WATTS, University of Surrey, UK
Ireland, S. GUPTA, P. JAISWAL, N. BHAT, S.A. SHIVASHANKAR, Indian Institute of Science Bangalore, India, G.J. HUGHES, Dublin City University, Ireland AS-TuP25 Electron/Positron Slowing Down in Solid Targets: Comment on Z. Rouabah et al. Papers, A. BENTABET, Bordj-Bou-Arreridj University, Algeria, N. FENINECHE, LERMPS, UTBM University, France AS-TuP26 STM Imaging and Manipulation of a Three-Metal-Center Organometallic Molecule, N.A. WASIO, R.C. QUARDOKUS, Y. LU, S.A. KANDEL, University of Notre Dame
Method for Cross-sectional Analysis Using FIB, ToF-SIMS and Multivariate Analysis, J.A. OHLHAUSEN, M.J. RYE, P.G. KOTULA, J.R. MICHAEL, T.J.
AS-TuP5
Development of Advanced SIMS Single Stage Accelerator Mass Spectrometer Instrument at the Naval Research Laboratory, K. FAZEL, K.
AS-TuP27
GARINO, Sandia National Laboratories
GRABOWSKI, D. KNIES, G. HUBLER, Naval Research Laboratory
XPS Depth Analysis of Metal/Polymer Multilayer by Electrospray AS-TuP28 Catalytic Effect of Ni in the Gasification of Flexicoke with Water Droplet Impact, Y. SAKAI, R. TAKAISHI, S. NINOMIYA, K. HIRAOKA, University of Yamanashi, Steam, J.C. DE JESUS, I.J. GONZALEZ, PDVSA Intevep, Venezuela (Bolivarian Republic of),
AS-TuP6 Japan
A Combined HAXPES and Electrical Characterisation Study of Si and III-V based MOS Structures, L.A. WALSH, G.J. HUGHES, Dublin City University, Ireland,
E.A. RENDON, Universidad Central de Venezuela, (Bolivarian Republic of)
AS-TuP7
P.K. HURLEY, J.H. LIN, Tyndall National Laboratory, Ireland, J.C. WOICIK, National Institute of Standards and Technology
The Effect of Ultrasonic Treatment on the Defect Structure of the Si– SiO2 System by Means of Electron Spin Resonance, MOS Capacitance Technique and Secondary Ions Mass-Spectroscopy is Presented, D.J.
AS-TuP8
KROPMAN, Tallinn University of Technology, Estonia
The Development of Charged Particle Lenses for High Spatial Resolution XPS Studies, R. WALKER, Shimadzu Research Laboratory (Europe) LTD, UK AS-TuP10 Image Depth Profiling for Three-Dimensional Characterisation of Microelectronic Structures, B. SGAMMATO, A.E. WRIGHT, A. BUSHELL, Thermo Fisher AS-TuP9
Scientific, UK AS-TuP11 Developing a Methodology for XPS Profiling of Biofilms and Biological Materials, R.G. WHITE, Thermo Fisher Scientific, UK, D.Y. PETROVYKH, International Iberian Nanotechnology Laboratory, Portugal, A.C. AREIAS, C. SOUSA, G.P. MENDES, University of Minho, Portugal
XPS and Auger Analysis of Single and Multi-Layer Graphene Films: What is Graphene and What is Not?, H.M. MEYER III, I. VLASSIOUK, Oak Ridge National
AS-TuP12
Laboratory, A.V. SUMANT, Argonne National Laboratory AS-TuP13 XPS Sputter Depth Profiling of Organic Thin Films Using an Ar Cluster Ion Source, A.J. ROBERTS, S.J. HUTTON, C.J. BLOMFIELD, W. BOXFORD, Kratos Analytical Ltd., UK AS-TuP14 Quantitative XPS Depth Profiling of Mobile Ions in Soda-Lime-Silica Glasses using a Polyatomic Ion Source, C.J. BLOMFIELD, S.J. HUTTON, W. BOXFORD, Kratos Analytical Ltd., UK
XPS Assessment of the Thickness of Fe Oxide Layers using Standard and Active Shirley Background, M. BRAVO-SANCHEZ, CINVESTAV-Unidad
AS-TuP15
Queretaro, Mexico, F. ESPINOSA-MAGAÑA, CIMAV Unidad-Chihuahua, Mexico, A. HERRERAGOMEZ, UAM-Azcapotzalco and CINVESTAV-Queretaro, Mexico AS-TuP16 Active Fitting for Optimized Shirley Background Determination, J. MUÑOZ-FLORES, UAM-Xochimilco, Mexico, A. HERRERA-GOMEZ, UAM-Azcapotzalco and CINVESTAV-Queretaro, Mexico AS-TuP17 Impact of an Instrumented Custom Side Chamber for Catalysis Processing Studies, M. ENGELHARD, D.R. BAER, EMSL, Pacific Northwest National Laboratory, S. LIN, Washington State University, D. MEI, S. THEVUTHASAN, EMSL, Pacific Northwest National Laboratory AS-TuP18 Atom Probe Tomography Analysis of Grain Boundaries in CdTe, V.S. SMENTKOWSKI, General Electric Global Research Center, D.J. LARSON, D.A. REINHARD, T.J. PROSA, Cameca Instruments Inc., D. OLSON, Cambridge University, UK, D. LAWRENCE, P.H. CLIFTON, R.M. ULFIG, T.F. KELLY, Cameca Instruments Inc. AS-TuP19 Mapping of a Natural Lubricant Network on the Surface of Silicone Hydrogel Materials Using Surface and Bulk Chemistry Techniques, K.A. WYGLADACZ, D.J. HOOK, M. MERCHEA, E.P. MAZIARZ, Bausch + Lomb
124
Tuesday Afternoon Poster Sessions Biomaterial Interfaces Room: Central Hall - Session BI-TuP
Spectroscopic Ellipsometry Focus Topic Room: Central Hall - Session EL+TF+AS+EM+SS-TuP
Biomaterial Interfaces Poster Session 6:00 pm
Spectroscopic Ellipsometry Poster Session 6:00 pm
BI-TuP1 Response of Mesenchymal Stem Cells to Nano-Scale Rippled Silicon Surfaces, O.Z. ANDERSEN, A. KELLER, D.C.E. KRAFT, F. BESENBACHER, M. FOSS, Aarhus
EL+TF+AS+EM+SS-TuP1 Ellipsometric Characterization of Iron Pyrite (FeS2) and Samarium Sesquisulfide (Sm2S3) Thin Films, A. SARKAR, N.J. IANNO, University of
University, Denmark
Nebraska-Lincoln, J.R. BREWER, Rare Earth Solar
BI-TuP2 In Vitro Cytotoxicity of Poly(N-isopropyl acrylamide), M.A. COOPERSTEIN, H.E. CANAVAN, University of New Mexico
EL+TF+AS+EM+SS-TuP2 Temperature Dependence of the Dielectric Function of Germanium by Spectroscopic Ellipsometry, A.A. MEDINA, L.S. ABDALLAH, S.
Functionalization of Cerium Oxide Nanoparticles with Biocompatible Molecules to Prevent Surface Modification by Phosphate Ions, P. MENDEZ, S.
ZOLLNER, New Mexico State University
BI-TuP3
DAS, A. KUMAR, S. SUDIPTA, University of Central Florida BI-TuP4 Surface Topographic Patterns Functionalized with Different Biomaterials for Studying Neural Cell Behaviors, Y.P. LU, M.Y. LIN, National Applied Research Laboratories, Taiwan, Republic of China BI-TuP5 Nanoscale Characterization of Acid and Thermally Treated Collagen Fibrils and its Effects on the Cellular Responses of Osteoblast, Y.J. PARK, KAIST, Republic of Korea, G.J. CHOI, S.H. KIM, J.H. HAHN, T.G. LEE, KRISS, Republic of Korea, W.J. LEE, KAIST, Republic of Korea, D.W. MOON, KRISS, Republic of Korea BI-TuP6 Comparison between Fabrication Techniques for Glass Microfluidic Microchannels, C. VÉLEZ, S. SILVA, Universidad de los Andes, Colombia, X. WANG, University of Florida, A. GONZALEZ-MANCERA, C. LEIDY, J.F. OSMA, Universidad de los Andes, Colombia, F. REN, University of Florida BI-TuP7 Ceria-Gold-Chitosan Nanosystem with Improved Redox Activity and Enhanced Imaging, S. BARKAM, S. DAS, University of Central Florida, P. KULKARNI, S. MALLIK, North Dakota State University, S.S. SEAL, University of Central Florida
The Effect of Light-Induced Surface Modification of Functionalized Ceria Nanoparticles towards Killing of Skin-Derived Cancer Cells, S. BARKAM, S.
BI-TuP8
DAS, V.P. PEREZ, S.S. SEAL, University of Central Florida BI-TuP9 Stability and Dispersion Characterstics of Ceria Nanoparticles in Biological Media, P. MUNUSAMY, T. SUNTHARAMPILLAI, D.R. BAER, Pacific Northwest National Laboratory BI-TuP10 An Anti-biofilm Formation Design Strategy Based on Fibrous Topographical Cues, M. KARGAR, A.S. NAIN, B. BEHKAM, Virginia Tech BI-TuP11 Synthesis of Redox Active Cerium Oxide Nanoparticle with Varying Size and Shape by Manipulating the Chain Length of PEG, S. DAS, C. NEAL, A. KUMAR, University of Central Florida, A.S. KARAKOTI, Pacific Northwest National Laboratory, S.S. SEAL, University of Central Florida BI-TuP12 In Vitro Protein-Biofilm on Nanoparticles Characterizated by ToFSIMS, STEM and TEM, H.P. WIESMANN, J. NEUNZEHN, Technische Universität Dresden, Germany, F. DRAUDE, H.F. ARLINGHAUS, University of Muenster, Germany BI-TuP13 A Novel Method for the Bio-conjugation of Catalytic Nanoparticles, R. DRAPER, S. DAS, S.S. SEAL, University of Central Florida BI-TuP14 A Microfluidic Study of the Interaction of Haematopoietic Stem Cells with their Microenvironment, M. HANKE, C. CHRISTOPHIS, C. LEINWEBER, Institute for Functional Interphases, KIT, Karlsruhe, Germany, N. BARAN, I. TAUBERT, P. WUCHTER, A. HO, University Hospital Heidelberg, Inner Medicine V, Germany, A. ROSENHAHN, Institute for Functional Interphases, KIT, Karlsruhe, Germany BI-TuP15 Computer Aided Cancer Diagnosis from Quantitative Analysis of Contrast-Enhanced Ultrasound, C.N. TA, Y. KONO, C.V. BARBACK, R.F. MATTREY, A.C. KUMMEL, University of California San Diego BI-TuP16 Nonfouling Amphiphilic Polysaccharides, S. BAUER, M.P. ARPA-SANCET, Ruprecht-Karls University Heidelberg, Germany, J. FINLAY, University of Birmingham UK, N. ALDRED, Newcastle University, UK, M.E. CALLOW, J.A. CALLOW, University of Birmingham UK, A.S. CLARE, Newcastle University, UK, A. ROSENHAHN, Karlsruhe Institute of Technology, Germany
W6+ Ion Induced TiO2 Nano-porous Biomatirx for Biosensor Application, R.R. PANDEY, C. KANT, CSIR-National Physical Laboratory, National Physical
BI-TuP17
Laboratory, India, M. DHAYAL, CSIR Centre for Cellular and Molecular Biology (CCMB), India, K.K. SAINI, CSIR-National Physical Laboratory, National Physical Laboratory, India BI-TuP18 STM Characterization of Chemically Prepared Peptide-Functionalized Monolayers, A. RAIGOZA, L. WEBB, The University of Texas at Austin
125
Tuesday Afternoon Poster Sessions In Situ Microscopy and Spectroscopy Focus Topic Room: Central Hall - Session IS-TuP
MEMS and NEMS Room: Central Hall - Session MN-TuP
In Situ Microscopy and Spectroscopy Poster Session 6:00 pm
MEMS and NEMS Poster Session 6:00 pm
IS-TuP1 In Situ FTIR Analysis Monitored Pt Growth by Using Metal ALD System, C.C. YU, Y.C. YEH, C.C. KEI, C.-N. HSIAO, Instrument Technology Research Center,
MN-TuP1 Tangential Momentum Accommodation Coefficients in Coated Microtubes, M. HADJ NACER, I. GRAUR, P. PERRIER, J.G. MÉOLANS, Aix-Marseille
Taiwan, Republic of China
Université, Ecole Polytechnique Universitaire de Marseille, France, M. WÜEST, INFICON Ltd, Liechtenstein
In Situ Infrared Spectroscopic Studies of the Stability of Nanoporous Materials in Water Vapor for Gas Adsorption and Separation, K. TAN, N. NIJEM, IS-TuP2
MN-TuP2 Fabrication High Aspect Ratio Microstructures in Cyclic Olefin Copolymer (COC) by Hot Embossing with Soft Masters, K.S. MA, J.D. TIAN, Duke
The University of Texas at Dallas, P. CANEPA, Wake Forest University, Q. GONG, J. LI, Rutgers University, T. THONHAUSER, Wake Forest University, Y.J. CHABAL, The University of Texas at Dallas
University MN-TuP3 Development of Deposition and Etching Processes of Thick ZnS Films for Pixel Level Packaging of Infrared Focal Plane Arrays, B. GLÜCK, ST
Determination of the Mechanisms of Photooxidation of CdSe/ZnS Quantum Dots/Shells, L.J. POWELL, S. SAURABH, M. BRUCHEZ, Carnegie Mellon IS-TuP3
Microelectronics, France, G. RODRIGUEZ, G. DUMONT, S. BARNOLA, CEA, LETI, MINATEC Campus, France
University, L.F. ALLARD, Oak Ridge National Laboratory, L. QU, M. BOOTMAN, Crystalplex Inc., R.F. DAVIS, Carnegie Mellon University IS-TuP4 Coherent X-ray Imaging, T. SENKBEIL, T. GORNIAK, A. BUCK, Karlsruhe Institute of Technology, Germany, K. GIEWEKEMEYER, T. SALDITT, University of Goettingen, Germany, A. ROSENHAHN, Karlsruhe Institute of Technology, Germany
MN-TuP4 Low Damage Etching Process for Fabricating Micro Electro Mechanical Systems (MEMS) Devices using Neutral Beam, K. MIWA, Y. NISHIMORI, S. UEKI, BEANS Laboratory, Japan, M. SUGIYAMA, The University of Tokyo, Japan, T. KUBOTA, S. SAMUKAWA, Tohoku University, Japan
Deveropment of Test Instrument for the Mechanical Strength of Micro-nano Wires, A. KASAHARA, M. SASAKI, H. SUZUKI, M. GOTO, M. TOSA, National
MN-TuP5
Institute for Materials Science (NIMS), Japan MN-TuP6 Tin-Oxide Nanostructured Arrays Based Integrated MEMS Device for Low Temperature Hydrogen Detection, R.N. MCCORMACK, University of Central Florida, N. SHIRATO, University of Tennessee, U. SINGH, S. DAS, A. KUMAR, H.J. CHO, University of Central Florida, R. KALYANARAMAN, University of Tennessee, S.S. SEAL, University of Central Florida MN-TuP7 Nanoimprint Block Co-polymer Enhanced Nanostructure Lithography, J. ZENDEJAS, B. WONG, S. FRANZ, R. CANDLER, UCLA MN-TuP9 Electrostatic Deposition of a Micro Solder Particle Using a Single Probe by Applying a Single Rectangular Pulse, D. NAKABAYASHI, K. SAWAI, P. HEMTHAVY, K. TAKAHASHI, S. SAITO, Tokyo Institute of Technology, Japan
126
Tuesday Afternoon Poster Sessions Nanomanufacturing Science and Technology Focus Topic Room: Central Hall - Session NM-TuP
Oxide Heterostructures-Interface Form & Function Focus Topic Room: Central Hall - Session OX-TuP
Topics in Nanomanufacturing Poster Session 6:00 pm
Oxide Interfaces and Heterostructures Poster Session 6:00 pm
NM-TuP1 Fabrication and Characterization of Nanoscale Carbon Nanotube Patterns on Nanostructured Aluminum Surfaces, Y. WATANABE, H. KATO, S.
OX-TuP1
ASAMI, S. SATO, S. TAKEMURA, K. SHIMADA, T. HIRAMATSU, Kanto Gakuin University, Japan
The Ohio State University, S.R. PHILLPOT, University of Florida, A. ASTHAGIRI, The Ohio State University, S.B. SINNOTT, University of Florida
Topographical and Raman Studies of Nano-graphite Patterns on Nanostructured Al and Si Surfaces by Carbon Drawing, Y. TAKARAI, T. NM-TuP2
HIRAKAWA, K. DOI, H. KATO, A. ISHII, Y. WATANABE, S. TAKEMURA, T. HIRAMATSU, Kanto Gakuin University, Japan
A Kinetic Monte Carlo Study of Cu Cluster Formation on Cu and ZnO Surfaces using COMB Potentials, Y.-T. CHENG, T. LIANG, University of Florida, X.W. NIE,
Study of the Resistive Switching Behavior of HfO2-Al2O3 Nanolaminate Metal-Insulator-Metal MIM Devices for MIM Memory Applications, M. BONVALOT, J. POINTET, C. MANNEQUIN, A. BSIESY, P. GONON, C.
OX-TuP2
Photoluminescence Enhancement of Aluminum Surfaces with Various Shaped Nanostructures Filled with Metallopfthalocyanines and Organic Dye Molecules, A. ISHII, T. SHIMIZU, H. KATO, T. KAMINO, S. TAKEMURA, T.
VALLEE, LTM - MINATEC - CEA/LETI, France
HIRAMATSU, Kanto Gakuin University, Japan
D.E. YILMAZ, S.R. PHILLPOT, S.B. SINNOTT, University of Florida
NM-TuP3
Molecular Dynamics Simulation Studies of The Toughening Mechanisms of Bio-inspired Hybrid Ceramic-based Materials, K. YAO, T. LIANG,
OX-TuP3
A Variable Charge Reactive Potential for Nitrogen based Hydride and Oxide Molecules to Simulate Oxide Growth on AlN and TiN, J. MARTINEZ, S.R.
OX-TuP4
PHILLPOT, S.B. SINNOTT, University of Florida
Effects of Nonstoichiometry on the Structure and Electronic Properties of LaCrO3 Thin Films on SrTiO3(001), K.H.L. ZHANG, Y.G. DU, L. QIAO,
OX-TuP5
S.A. CHAMBERS, Pacific Northwest National Laboratory OX-TuP6 The Influence of Nano-Scale Interfaces and Co-Doping on the Oxygen Ionic Conductivity of Ceria and Zirconia Based Thin Film Electrolytes, M.I. NANDASIRI, Q. LANGFITT, M. QUINTERO, T. VARGA, A. DEVARAJ, S. MANANDHAR, P. NACHIMUTHU, V. SHUTTHANANDAN, S. THEVUTHASAN, EMSL, Pacific Northwest National Laboratory, A. KAYANI, Western Michigan University
127
Tuesday Afternoon Poster Sessions Advanced Surface Engineering Room: Central Hall - Session SE-TuP
Scanning Probe Microscopy Focus Topic Room: Central Hall - Session SP-TuP
Advanced Surface Engineering Poster Session 6:00 pm
Scanning Probe Microscopy Poster Session 6:00 pm
Analysis of the Physical Damage during HBr/O2/Ar Gate Etching using Various Pulsed Plasmas, K.Y. JEON, J.Y. LEE, G.J. MIN, Samsung Electronics Co.
Quantitative Barrier Height Measurements of Tryptanthrin Monolayers on HOPG, K. SRIRAMAN, J. NOVAK, J. BAUM, A. OLSON, Florida Institute of Technology SP-TuP2 Engineering a Molecular Labyrinth, E. YITAMBEN, N. GUISINGER, Argonne
SE-TuP1
Ltd., Republic of Korea SE-TuP2 Deposition of Hard SiOC(− H) Films by Atmospheric Pressure Plasma Enhanced CVD Method, M. NOBORISAKA, R. HORIKOSHI, A. SHIRAKURA, T. SUZUKI,
SP-TuP1
National Laboratory
Keio University, Japan SE-TuP3 Thermal Transport at Metal-Carbon Interfaces, J.J. GENGLER, Spectral Enegies LLC/Air Force Research Laboratory, S.V. SHENOGIN, UES Inc./Air Force Research Laboratory, A.A. VOEVODIN, A.K. ROY, C. MURATORE, Air Force Research Laboratory SE-TuP4 Multilayer on a Staircase Substrate for Hard X-ray Gratings, C. LIU, Argonne National Laboratory, S. LYNCH, E. BENNETT, A. GOMELLA, National Institutes of Health, L. ASSOUFID, Argonne National Laboratory, H. WEN, National Institutes of Health
128
Tuesday Afternoon Poster Sessions Methanol Induced Nanopatterning of Si(111):H – Insights from Density Functional Calculations, P. THISSEN, T. PEIXOTO, K. ROODENKO, University of
Surface Science Room: Central Hall - Session SS-TuP
SS-TuP21
Texas at Dallas, E. FUCHS, Zyvex Labs LLC, W.G. SCHMIDT, University of Paderborn, Germany, Y.J. CHABAL, University of Texas at Dallas
Surface Science Poster Session 6:00 pm SS-TuP1 MORTON S. TRAUM AWARD FINALIST: Quantum Tunneling Driven Assembly and Diffusion of Hydrogen and Deuterium on Cu(111), A.D. JEWELL*, Tufts University, G. PENG, University of Wisconsin Madison, G. KYRIAKOU, Tufts University, M. MAVRIKAKIS, University of Wisconsin Madison, C.H. SYKES, Tufts University
Essen, Germany, E. KARPOV, University of Illinois at Chicago, E. HASSELBRINK, D. DIESING, University of Duisburg-Essen, Germany
Synthesis, Characterization and Catalytic Activity of Pt Nanoparticles Supported on γ-Al2O3 and WC: Size and Support Effects, M. AHMADI, L. MERTE,
SS-TuP25
B. ROLDAN CUENYA, University of Central Florida
Ligand Functionalized Cerium Oxide Nanoparticles - Investigating the Mode and Energetics of Binding, A.S. KARAKOTI, Z. LU, W. WANG, P.
SS-TuP26
WEINERT, M. GAJDARDZISKA-JOSIFOVSKA, J. CHEN, C. HIRSCHMUGL, University of Wisconsin Milwaukee
MORTON S. TRAUM AWARD FINALIST: Layer-by-Layer Assembly of Organic Molecular Donor-Acceptor Heterojunctions on Vicinal Gold Surfaces, J. WANG*, J.-M. TANG, G.P. MILLER, K. POHL, University of New Hampshire SS-TuP5 MORTON S. TRAUM AWARD FINALIST: Synthesis and Characterization of Yttrium Aluminum Garnet and Lanthanum Zirconate Particles, R.R. HARL*, S.L. GOLLUB, G. WALKER, B.R. ROGERS, Vanderbilt University SS-TuP6 The Influence of the Magnetic Field on the Photo-Functional Property of TiO2/Ni/TiO2 Thin Films Prepared by Sputtering, A. TOYODA, I. TAKANO, SS-TuP4
Kogakuin University, Japan
Photo-function Property of TiO2/Cu2O Thin Films by Reactive Magnetron Sputtering, T. NAKAJIMA, I. TAKANO, S. ARAHARA, Kogakuin University, Japan SS-TuP8 Atomic Arrangements and Structural Stability of the Mn Adsorbed GaAs(001) Surfaces, A. HAGIWARA, The University of Electro-Communications (UECSS-TuP7
Tokyo), Japan, A. OHTAKE, National Institute for Materials Science (NIMS), Japan, Y. KANNO, S. YASUMURA, J. NAKAMURA, The University of Electro-Communications (UEC-Tokyo), Japan
Facets and Surfaces Observed on Si(5 5 12) Studied by using UltraHigh-Vacuum Scanning Tunneling Microscopy, S.-G. ZHAO, Y. LI, Y.-B. SONG, Y.-Z.
SS-TuP9
ZHU, Yanbian University, China, J.M. SEO, Chonbuk National University, Republic of Korea, S. ZHANG, Z.-P. GUO, Yanbian University, China
Nacional Autonoma de Mexico, M. FLORES, Universidad de Guadalajara, Mexico, R. ESCAMILLA, Universidad Nacional Autonoma de Mexico
KARAKOTI, Pacific Northwest National Laboratory, S. BARKAM, S.S. SEAL, University of Central Florida
NACHIMUTHU, H. WANG, P. YANG, S. THEVUTHASAN, Pacific Northwest National Laboratory
In Situ Coarsening Study of Micellar Pt Nanoparticles Supported on γ-Al2O3: Pretreatment and Environmental Effects, J. MATOS, L.K. ONO, F.
SS-TuP27
BEHAFARID, J.R. CROY, S. MOSTAFA, University of Central Florida, A.T. DELARIVA, A. DATYE, University of New Mexico, A.I. FRENKEL, Yeshiva University, B. ROLDAN CUENYA, University of Central Florida
Synthesis, Characterization and Reactivity of Cu-Zn and Cu-Pd Bimetallic Nanoparticles, H. MISTRY, L. MERTE, B. ROLDAN CUEYNA, University of Central
SS-TuP28 Florida
SS-TuP29 CO Oxidation over Au/TiO2 Model Catalyst, T. FUJITANI, I. NAKAMURA, AIST, Japan SS-TuP30 Active Sites for H2 Dissociation on Gold Model Catalyst, I. NAKAMURA, T. FUJITANI, AIST, Japan SS-TuP31 Image Potential State Mediated Excitation of Rubrene on Graphite, J. PARK, Seoul National University, Republic of Korea, T. UEBA, L. TERAWAKI, T. YAMADA, H. KATO, T. MUNAKATA, Osaka University, Japan SS-TuP32 Tribological Properties in a Vacuum of DLC Thin Films Prepared by N2+ Ion Beam Assisted Deposition, H. NISHI, K. HARADA, I. TAKANO, Kogakuin University, Japan
SS-TuP10 Photoelectron Spectroscopy and Valence Band Studies of NonStoichiometric Superconducting FeSe1-xTex, L. HUERTA, V. ORTÍZ, Universidad
Photovoltaic Property of Cu2O/Cu/TiO2 Thin Films Prepared by Reactive Magnetron Sputtering, Y. SUZUKI, I. TAKANO, Kogakuin University, Japan SS-TuP12 Measurement of pH Induced Transition in Redox Potential for Cerium Oxidation States in Nanoceria, S. SARAF, University of Central Florida, A.S.
CARTAS, Univeristy of Florida, T.E. MILSTREY, J.F. WEAVER, University of Florida SS-TuP24 Modeling of Chemical Reaction – Induced Thermal Currents in Metal Nanofilm – Semiconductor Schottky Diodes, I. NEDRYGAILOV, University of Duisburg-
MORTON S. TRAUM AWARD FINALIST: Coverage-Dependent Interfacial Electronic Structures of Thiophenol and p-Fluorothiophenol on Cu(111), S.-Y. HONG*, P.-C. YEH, J. DADAP, R.M. OSGOOD, Columbia University SS-TuP3 MORTON S. TRAUM AWARD FINALIST: Understanding Molecular Adsorption on Graphene-based Hybrid Nanostructures by In Situ Infrared Microspectroscopy, E. MATTSON*, S. CUI, K. PANDE, H. PU, M. SCHOFIELD, G. LU, M. SS-TuP2
SS-TuP11
Reactivity of Propane on Pd Oxide Phases Prepared by Surface Oxidation vs. Reduction, C. HAKANOGLU, J.F. WEAVER, University of Florida SS-TuP23 Structural Properties of TbOx Thin Films Grown on Cu(111), W.S.
SS-TuP22
SS-TuP33 Electronic Structure and Electron-Phonon Coupling of Au/Mo(112), K. FUKUTANI, University of Nebraska-Lincoln, H. HAYASHI, Hiroshima University, Japan, N. LOZOVA, Louisiana State University, H. IWASAWA, Hiroshima University, Japan, I.N. YAKOVKIN, National Academy of Sciences of Ukraine, K. SHIMADA, Hiroshima University, Japan, P.A. DOWBEN, University of Nebraska-Lincoln SS-TuP34 Atomic Structure of the Bi-induced (1×3) Surface Reconstruction on GaAs(001), A. DUZIK, J.C. THOMAS, A. VAN DER VEN, University of Michigan, N.A. MODINE, Sandia National Laboratories, J.M. MILLUNCHICK, University of Michigan
Spectroscopic Study of the Chemical Reaction at the Ca/PMMA Interface, H.X. JU, J.-H. ZHU, University of Science and Technology of China SS-TuP36 Mass Ratio Effects in Hyperthermal Surface Scattering, D. KULKARNI,
SS-TuP35
SS-TuP13 XPS and STM Studies of Metal Dopant-Ceria Mixed Oxide Interfaces, J. ZHOU, E. GINTING, University of Wyoming, Y.H. ZHOU, Xiamen University, China C.E. SOSOLIK, Clemson University SS-TuP37 Ag Nanoparticles on Reducible CeO2(111) Thin Films: Effect of SS-TuP14 Phosphonic Acids for Surface Initiated Polymerization from Oxide Nanoparticles and Flat Surfaces: Towards Applications in Organic Electronics, Nanoscale Ceria, S.W. HU, X.F. FENG, D.D. KONG, D.L. CHENG, Y.F. YE, J.-H. ZHU, S.A. PANIAGUA, Y. KIM, N. DOUBINA, Georgia Institute of Technology, C.K. LUSCOMBE, University of Washington, J.W. PERRY, S.R. MARDER, Georgia Institute of Technology
University of Science and Technology of China
SS-TuP38 The Adsorption of CO and CO2 on Silica Supported CuOx NanoClusters, J. SHAN, A. CHAKRADHAR, M. KOMARNENI, U. BURGHAUS, North Dakota State Determination of Active Surface Region in Pure and Modified TiO2 University Photocatalysts, T. LUTTRELL, J. TAO, M. BATZILL, University of South Florida SS-TuP16 Basic Regimes and Reaction Mechanisms of Chemicurrent Generation during H2 Oxidation on Catalytic MIM Nanostructures with Porous TiO2 Support, M. HASHEMIAN, S. DASARI, E. KARPOV, University of Illinois at Chicago SS-TuP17 Photo-patternable Superhydrophobic Porous TiO2 Films Prepared by Hydrothermal Treatment, S. NISHIMOTO, M. BECCHAKU, Y. KAMESHIMA, M. MIYAKE, SS-TuP15
Okayama University, Japan
High Hydrophobic Surface with Metabolic System using Organic Monolithic Structure, M. SAKAI, Kanagawa Academy of Science and Technology, Japan, T.
SS-TuP18
KATO, A. NAKAJIMA, Tokyo Institute of Technology, Japan, A. FUJISHIMA, Science University of Tokyo, Japan SS-TuP19 Adsorption of Water on a Hydrophobic Sb(111) Surface, A. CHAKRADHAR, J. SHAN, Z. YU, U. BURGHAUS, North Dakota State University SS-TuP20 Insulating Si(111) Surfaces by Organic Fluorine Compound Molecular Monolayer, F.Y. TIAN, A.V. TEPLYAKOV, University of Delaware
129 * Morton S. Traum Award Finalist
Tuesday Afternoon Poster Sessions Tribology Focus Topic Room: Central Hall - Session TR-TuP
Vacuum Technology Room: Central Hall - Session VT-TuP
Tribology Poster Session 6:00 pm
Vacuum Technology Poster Session and Student-built Vacuum System Poster Competition 6:00 pm
TR-TuP1 Nanomechanical and Nanotribological Responses of Si/SiO2 Interfaces, F.-Y. LIN, X. SUN, D.E. YILMAZ, S.R. PHILLPOT, S.B. SINNOTT, University of
VT-TuP1 Quantitative Evaluation Method of Mixture Gas with Impurity of PPM Level in Vacuum Process, J.-T. KIM, J.-Y. YUN, KRISS, Republic of Korea TR-TuP2 Origin of a Broad Band Emission in Triboluminescence during Friction VT-TuP2 Pressure Effects in Autoresonant Ion Trap Mass Spectrometers between Diamond and Quartz in a Gas: Contribution of a Micro-discharge (ARTMS), P. ACOMB, G.A. BRUCKER, J. RATHBONE, Brooks Automation, Inc., Granvillecaused by Triboelectricity, T. MIURA, National Institute of Occupational Safety and Health, Phillips Products Florida
Japan, E. IMAI, I. ARAKAWA, Gakushuin University, Japan
VT-TuP3 Investigation of a Method for Measurement of Water Vapor Coverage on Technical Surfaces, M. SEFA*, Laboratory Lotric d.o.o., Slovenia, J. ŠETINA, Institute of
Frictional Study of Carbon Nanotube Arrays Grown on Artificial Hip Joint Metal Surfaces, M. YOSHIMURA, K. SUMIYA, Toyota Technological Institute, Japan TR-TuP4 Microhardness of Coatings Based on Titanium Nitride and Silicon Nitride Produced by DC Magnetron Sputtering, J.A. HUARANGA, Universidad TR-TuP3
Metals and Technology, Slovenia
Nacional de Ingeniería, Lima, Perú, C. BENNDORF, Hamburg University, Germany, A.F. TALLEDO, Universidad Nacional de Ingeniería, Lima, Perú
Tribocorrosion behaviour of ZrN Multilayer Coatings Deposited by Magnetron Sputtering onto Ti6Al4V Substrate Alloy, O. JIMENEZ-ALEMAN, M.
TR-TuP5
C.-P. LIN, C.-N. HSIAO, F.-Z. CHEN, Instrument Technology Research Center, Taiwan VT-TuP6 Status of the FRIB Vacuum System Design, P. GIBSON, B. DURICKOVIC, P. GUETSCHOW, FRIB, R. KERSEVAN, CERN, M. LEITNER, D. LEITNER, L. LINGY, F. MARTI, G. MORGAN, FRIB, D. SANDERSON, NSCL, M. SCHEIN, M. SHUPTAR, FRIB
FLORES-MARTINEZ, E. RODRIGUEZ DE ANDA, J. REYES-MORALES, Universidad de Guadalajara, Mexico
VT-TuP7 PLS-II Vacuum System Commissioning, C.D. PARK, S. CHUNG, T. HA, C.K. KIM, M.S. HONG, H.C. KWON, Y.D. JOO, Pohang University of Science and Technology, Republic of Korea
Comparative Study of Tribocorrosion Behavior of Biomedical Alloys Coated with Metal-Ceramic Multilayers, M. FLORES, O. JIMENEZ, E. RODRIGUEZ,
TR-TuP6
Universidad de Guadalajara, Mexico, L. HUERTA, Universidad Nacional Autonoma de Mexico TR-TuP7 Analysis of Coatings in Matrix of Conformation Fasteners in Stainless Steel Austenitic, W. MATTES, Centro Universitário Catolica de Santa Catarina, Brazil, J.M.F. PAIVA JUNIOR, SENAI-SC, Brazil, T. UTECH, Centro Universitário Catolica de Santa Catarina, Brazil, N.K. DIAS, SENAI-SC, Brazil
VT-TuP4 Flow of a Binary Gas Mixture Into Vacuum: Experiment, Models, Simulation, M. VUKOVIC, Tokyo Electron, US Holdings, R. JOHNSEN, University of Pittsburgh VT-TuP5 A Calibration System for Helium Leak Calibrator, Y.-W. LIN, C.-C. HUNG,
VT-TuP8 An Application of Electron Stimulated Desorption Technique to Measure the Isotherm and the Mean Residence Time of Hydrogen Physisorbed on a Metal Surface, H. SHIMIZU*, N. INOSE, T. MIURA, I. ARAKAWA, Gakushuin University, Japan VT-TuP9 Radiative Heating from a Magnetically Levitated Turbo Pump, H. BULL*, CNSE, A. ANTOHE, SEMATECH, G. KANE, G. DENBEAUX, CNSE
Novel Light Sputter Ion Pump with Neodymium Iron Boron Magnets and the Low Outgassing Body, T. HA, S. CHUNG, C.D. PARK, Pohang University of
VT-TuP10
Science and Technology, Republic of Korea
Expanded Capability of Measuring Pumping Speed of Dry Vacuum Pumps Using Calibrated Sonic Nozzles, W.S. CHEUNG, S.H. NAM, W.J. KIM, J.Y. LIM,
VT-TuP11
KRISS, Korea VT-TuP12 Study on Improvement of Predictive Maintenance of Dry Vacuum Pumps Using an Adaptive Parametric Model of State Variables, S.H. NAM*, W.J. KIM, J.Y. LIM, W.S. CHEUNG, KRISS, Korea
Modeling of Energy Consumption Characteristics of Low Vacuum Dry Pumps, W.J. KIM*, S.H. NAM, W.S. CHEUNG, KRISS, Republic of Korea, M.K. KO,
VT-TuP13
Konyang University, Republic of Korea, J.Y. LIM, KRISS, Republic of Korea VT-TuP14 Dry Vacuum Pump, J.Y. LIM, W.J. KIM, S.H. NAM, KRISS, Republic of Korea, S.Y. IN, Korea Atomic Energy Research Institute, Republic of Korea, D.Y. KOH, Korea Institute of Machinery and Materials, Republic of Korea, W.S. CHEUNG, KRISS, Republic of Korea VT-TuP16 An Evaluation of the Outgassing Rates of Stainless Steel Vacuum Chambers Subjected to Different Heat Treatments and Coatings, M.A. MAMUN*, Old Dominion University, P.A. ADDERLEY, M.L. STUTZMAN, M. POELKER, Thomas Jefferson National Accelerator Facility
A Quantitate Examination of Venting Trapped Volumes Due to Fasteners, C. BRYSON, Apparati Inc.
VT-TuP17
130 * VT Student-Built Vacuum Systems Poster Competition
WEDNESDAY SPECIAL EVENTS 6:15 a.m. 7:00 a.m. 10:00 a.m. 12:00 p.m. 12:00 p.m. 3:20 p.m. 4:30 p.m. 4:40 p.m. 6:15 p.m. 7:15 p.m.
32nd Annual AVS Run—Bayshore Sidewalk (H) Companion Tour Registration—Main Lobby (H) Session Coffee Break—West Exhibit Hall (CC) Exhibit Hall Lunch—West Exhibit Hall (CC) Nanometer-Scale Science and Technology Division Public Student Award Competition—12 (CC) Session Refreshment Break—West Exhibit Hall (CC) E&M Reception (Invitation Only)—West Exhibit Hall (CC) Medard Welch Award Lecture, Y.J. Chabal, The Univ. of Texas at Dallas—22 (CC) AVS Awards Ceremony—Ballroom B (CC) AVS Awards Reception—Florida Ballroom (H)
10:00 a.m.-4:30 p.m. 10:20 a.m.-10:40 a.m. 12:20 p.m.-2:00 p.m. 3:20 p.m.-4:00 p.m.
Equipment Exhibition................................................................................................. West Exhibit Hall (CC) Exhibitors & Manufacturers Technology Spotlight................................................... West Exhibit Hall (CC) Exhibitors & Manufacturers Technology Spotlight................................................... West Exhibit Hall (CC) Exhibitors & Manufacturers Technology Spotlight.................................................... West Exhibit Hall (CC)
CC = Tampa Convention Center H = Tampa MarriotWaterside Hotel & Marina
WEDNESDAY SHORT COURSES 8:30 a.m. 8:30 a.m. 8:30 a.m. 8:30 a.m. 8:30 a.m.
Fundamentals of Vacuum Technology Composition Depth Profiling A Comprehensive Course on Surface Analysis and Depth Profiling by X-Ray Photoelectron Spectroscopy (XPS or ESCA), Auger Electron Spectroscopy (AES), Focused Ion Beam Analysis (FIB) and Secondary Ion Mass Spectroscopy (SIMS) Plasma Etching & RIE: Fundamentals & Applications Scanning Electron Microscopy and X-ray Microanalysis
LOCATION: COURSE HOURS:
All AVS Short Courses will be held at – Tampa Convention Center All AVS Short Course Hours: 8:30 a.m. – 5:00 p.m. – with 1.5 hour break for Lunch (Lunch not included)
131
Wednesday Morning, October 31, 2012 Applied Surface Science Room: 20 - Session AS-WeM Surface Analysis of Biological Materials Using Vibrational & Non Linear Optical Spectroscopy Techniques (8:00-10:00 am) / 3D Imaging & Nanochemical Analysis-Part 1 (10:40 am-12:00 pm) Moderators: R.P. Richter, CIC biomaGUNE & MPI for Intelligent Systems, Spain, D. Roy, National Physical Laboratory, UK, V.S. Smentkowski, General Electric Global Research Center 8:00 am
Biomaterial Interfaces Room: 23 - Session BI+SS+NS-WeM Bio/Nano Interfaces with Applications in Biomedicine and Energy Moderator: G.J. Leggett, University of Sheffield, UK
AS-WeM1 Invited BI+SS+NS-WeM1 Combining Colloidal Lithography and Photolithography to Fibril Formation within the Extracellular Matrix, from Preventing Bacterial Create Dual Length-Scale Topographical Features to Study Stem Cell Infections to Artificial Tissue Generation, P. KOELSCH, University of Washington Behavior, D.T. BENNETSEN, D.C.E. KRAFT, R. OGAKI, M. FOSS, Aarhus University, Denmark
8:20 am
Genetically Modified Tobacco Mosaic Virus (TMV)-based Electrochemical Detection of 2, 4, 6-trinitrotoluene (TNT), F. ZANG, H. BEN-
Invited talk continued.
BI+SS+NS-WeM2
YOAV, X. FAN, A. BROWN, J. CULVER, R. GHODSSI, University of Maryland
8:40 am
9:00 am
9:20 am
AS-WeM3 In Situ Monitoring of SDS Adsorption on Positively Charged Surfaces, S.-H. SONG, P. KOELSCH, T. WEIDNER, University of Washington, M.S.
BI+SS+NS-WeM3 Invited
WAGNER, The Procter & Gamble Company, D.G. CASTNER, University of Washington
Nanoparticles in Biology: Engineering the Interface for Sensing and Delivery, V. ROTELLO, University of Massachusetts
AS-WeM4 Invited
Invited talk continued.
Invited talk continued.
BI+SS+NS-WeM5 Hydrophobic Forces, Electrostatic Steering, and Acid– Base Bridging between Atomically Smooth Self-Assembled Monolayers and End-Functionalized PEGolated Lipid Bilayers, M. VALTINER, Max-Planck-
Enhanced Infrared Spectroscopy and Near-Field Microscopy with Infrared Antennas, T. TAUBNER, RWTH Aachen University, Germany
Institut fur Eisenforschung, Germany, S.H. DONALDSON, M.A. GEBBIE, J.N. ISRAELACHVILI, University of California, Santa Barbara AS-WeM6 FT-IR Spectrochemical Imaging: Applications with Focal Plane Array and Multiple Beam Synchrotron Radiation Source, M. UNGER, E.
BI+SS+NS-WeM6
MATTSON, J. SEDLMAIER, Z. ALAVI, R. DSOUZA, B. MANANDAR, C. HIRSCHMUGL, University of Wisconsin Milwaukee
A.C. KUMMEL, University of California San Diego
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
AS-WeM9 Invited
BI+SS+NS-WeM9
9:40 am
10:40 am
3D Analysis using X-ray Computed Tomography, S.R. STOCK, Northwestern
Viral Encapsulation in Lecithin Liposomes to Enhance the Therapeutic Effect of Oncolytic Viral Therapy, N. MENDEZ, V. HERRERA,
Engineering Bio-Interfaces using Electric Field-Induced Nanolithography, S. ZAUSCHER, R.J. FERRIS, B. YELLEN, Duke University
University
11:00 am
11:20 am
11:40 am
BI+SS+NS-WeM10 Supramolecular Bioassemblies at Solid-Liquid Interfaces: Binding Control through Redox-Driven Multivalent HostGuest Interactions, G.V. DUBACHEVA, CIC biomaGUNE, Spain, L. GUERENTE, D.
Invited talk continued.
HAVERCROFT, ION-TOF USA, Inc., D. RADING, R. MOELLERS, W. PAUL, E. NIEHUIS, ION-TOF GmbH, Germany
BOTURYN, Joseph Fourier University, France, R. AUZÉLY, CERMAV, France, R.P. RICHTER, CIC biomaGUNE, Spain; Joseph Fourier University, France; Max Planck Institute for Intelligent Systems, Germany, P. LABBÉ, Joseph Fourier University, France BI+SS+NS-WeM11 High-resolution In Situ Electrochemical STM Imaging of Phospholipid Model Cell Membrane, H. SHIMIZU, S. MATSUNAGA, University of Tokyo, Japan, T. YAMADA, T. KOBAYASHI, RIKEN, Japan, M. KAWAI, University of Tokyo, Japan
AS-WeM12 An Evolution of TOF-SIMS for Biological Analysis: From 2D Imaging to 3D FIB-TOF Tomography, G.L. FISHER, J.S. HAMMOND, S.R.
BI+SS+NS-WeM12 Characterization of Polymer/Drug Films as Model for Drug Eluting Coronary Stent Coating Layers, V. CIARNELLI, M.R.
BRYAN, Physical Electronics
ALEXANDER, M.C. DAVIES, C.J. ROBERTS, University of Nottingham, UK
High Spatial Resolution 2D and 3D TOF-SIMS Analysis using Cluster Ion Beams, F. KOLLMER, S. KAYSER, ION-TOF GmbH, Germany, N.
AS-WeM11
132
Wednesday Morning, October 31, 2012 Electronic Materials and Processing Room: 9 - Session EM+TF-WeM
Energy Frontiers Focus Topic Room: 15 - Session EN+PS-WeM
Hybrid Electronic Materials and Interfaces
Plasmas for Photovoltaics and Energy Applications
Moderators: M.R. Linford, Brigham Young University, A.J. Muscat, University of Arizona 8:00 am
Moderator: J.-P. Booth, LPP-CNRS, Ecole Polytechnique, France
EM+TF-WeM1 Invited
EN+PS-WeM1 Invited
Versatile Electron Beam Chemical Lithography on the Basis of Monomolecular Films, M. ZHARNIKOV, University of Heidelberg, Germany
Electron Driven C1-chemistry: Direct Conversion of Methane to Synthetic Fuels, T. NOZAKI, Tokyo Institute of Technology, Japan
8:20 am
Invited talk continued.
Invited talk continued.
8:40 am
EM+TF-WeM3 Covalently Linked Organic Monolayers on Silicon Surfaces: Making Them Better, Stronger, Faster!, H. ZUILHOF, Wageningen University,
EN+PS-WeM3
Netherlands
M.C.M. VAN DE SANDEN, R. ENGELN, Eindhoven University of Technology, the Netherlands
EM+TF-WeM4 Probing the Intrinsic Organic/Semiconductor Interface, W. PENG, O. SEITZ, R. CHAPMAN, University of Texas at Dallas, E.M. VOGEL, Georgia Institute of Technology, Y.J. CHABAL, University of Texas at Dallas
EN+PS-WeM4 Novel Processing Routes of Silicon Nanocrystals in a Remote Expanding Thermal Plasma for Photovoltaic Applications, I. DOGAN*, Eindhoven University of Technology, Netherlands, S.L. WEEKS, Colorado School
9:00 am
9:20 am
Plasma-assisted CO2 Conversion as Candidate Element in Future Solar Fuel Economy, S. WELZEL, S. PONDURI, F. BREHMER, M. MA,
of Mines, K. DOHNALOVA, T. GREGORKIEWICZ, University of Amsterdam, Netherlands, S. AGARWAL, Colorado School of Mines, M.C.M. VAN DE SANDEN, Dutch Institute for Fundamental Energy Research, Netherlands EN+PS-WeM5 Invited
EM+TF-WeM5 Towards Organic Electronics: Methods for the Selective Deposition of Semiconductors and Metals, J. YANG, Z. SHI, K. BORNER, A.V.
Growth of Microcrystalline Silicon using Tailored Voltage Waveform Driven Plasma Processes: From Materials to PV Devices, E.V. JOHNSON,
WALKER, University of Texas at Dallas
LPICM-CNRS, Ecole Polytechnique, France, S. POULIQUEN, P.A. DELATTRE, J.-P. BOOTH, LPP-CNRS, Ecole Polytechnique, France 9:40 am
Electroless Deposition of Co on SiO2 Surfaces Modified by an Aminosilane Self-Assembled Monolayer, R. JAIN, A. NG, E. WHITE, A.J.
EM+TF-WeM6
Invited talk continued.
MUSCAT, University of Arizona
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
EM+TF-WeM9 Invited
EN+PS-WeM9 Measurement and Control of Ion Energies in Dual Frequency Capacitive Hydrogen Discharges, E. SCHUENGEL, S. MOHR, J.
10:40 am
11:00 am
Polymer-Colloidal Nanocrystal Hybrid Materials for Photovoltaic Applications, J. XUE, R. ZHOU, P.H. HOLLOWAY, University of Florida
Invited talk continued.
SCHULZE, U. CZARNETZKI, Ruhr-University Bochum, Germany
EN+PS-WeM10 Raman Study of the Properties of Free Standing Silicon Nanocrystals Using Laser Induced Thermal Heating, L. HAN, A.H.M. SMETS, M. ZEMAN, Delft University of Technology, Netherlands
11:20 am
11:40 am
EM+TF-WeM11 Obtention of Deterministic Patterns through Wrinkling Formation, J.L. YAGUE, J. YIN, D. EGGENSPIELE, M.C. BOYCE, K.K. GLEASON,
EN+PS-WeM11 Fabrication of 3D Array Si Quantum Dots Superlattice using Biotemplate and Neutral Beam Etching, M.E. FAUZI, M. IGARASHI, W.
Massachusetts Institute of Technology
HU, S. SAMUKAWA, Tohoku University, Japan
EM+TF-WeM12 Surface Dynamics of Hybrid Silicon Interfaces Explored via EN+PS-WeM12 Two-dimensional Simulations of Hydrogen and Helium Atom Scattering, Z.M. HUND, R.D. BROWN, University of Chicago, L.E. Hydrogen/Silane Capacitively Coupled Dual Frequency Discharges, S. O'LEARY, California Institute of Technology, D. CAMPI, M. BERNASCONI, G. BENEDEK, Universitả di Milano-Bicocca, Italy, N.S. LEWIS, California Institute of Technology, S.J. SIBENER, University of Chicago
MOHR, E. SCHUENGEL, J. SCHULZE, U. CZARNETZKI, Ruhr University Bochum, Germany
133 * Coburn & Winters Student Award Finalist
Wednesday Morning, October 31, 2012 Exhibitor Technology Spotlight Room: West Hall - Session EW-WeM
Graphene and Related Materials Focus Topic Room: 13 - Session GR+AS+BI+PS+SS-WeM
Exhibitor Technology Spotlight
Graphene Surface Chemistry, Functionalization, Biological and Sensor Applications
Moderator: D. Surman, Kratos Analytical Inc. 8:00 am
Moderator: D.K. Gaskill, U.S. Naval Research Laboratory GR+AS+BI+PS+SS-WeM1 Structural Analysis of Chemically Functionalized Epitaxial Graphene with High-Resolution X-ray Reflectivity, J.D. EMERY, Q.H. WANG, M. ZARROUATI, Northwestern University, P. FENTER, Argonne National Laboratory, M.C. HERSAM, M.J. BEDZYK, Northwestern University GR+AS+BI+PS+SS-WeM2 In Situ FT-IR Study of Graphene Fluorination using XeF2, J.-F. VEYAN, N. SHAFIQ, University of Texas at Dallas, K. NOVOSELOV,
8:20 am
University of Manchester, UK, Y.J. CHABAL, University of Texas at Dallas
8:40 am
GR+AS+BI+PS+SS-WeM3 Invited
Molecularly Resolved Chemical Functionalization of Graphene, M.C. HERSAM, Northwestern University
9:00 am
Invited talk continued.
9:20 am
GR+AS+BI+PS+SS-WeM5 Label-Free Biosensing with Graphene FETs, R. STINE, J.T. ROBINSON, S.P. MULVANEY, P.E. SHEEHAN, C.R. TAMANAHA, U.S. Naval Research Laboratory
9:40 am
GR+AS+BI+PS+SS-WeM6 Structure of a Peptide Adsorbed on Graphene and Graphite, J. KATOCH, University of Central Florida, S.N. KIM, Z. KUANG, B.L. FARMER, R.R. NAIK, Air Force Research Laboratory, S.A. TATULIAN, M. ISHIGAMI, University of Central Florida
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
EW-WeM8 Mass Spectrometer Now Supports Process Control, S. LASS, Brooks Automation
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
GR+AS+BI+PS+SS-WeM9 Controlling the Spatial Distribution of Graphene Chemistry, S.C. HERNÁNDEZ, E.H. LOCK, S.G. WALTON, C.J. BENNETT, R. STINE, P.E. SHEEHAN, F.J. BEZARES, L.O. NYAKITI, R.L. MYERS-WARD, J.T. ROBINSON, J.D. CALDWELL, C.R. EDDY, JR., D.K. GASKILL, Naval Research Laboratory
11:00 am
Coverage-dependent Ordering of Adsorbed Iron Phthalocyanine on Epitaxial Graphene Grown on SiC(0001)-Si, A.A.
GR+AS+BI+PS+SS-WeM10
SANDIN, D.B. DOUGHERTY, J.E. ROWE, North Carolina State University
11:20 am
GR+AS+BI+PS+SS-WeM11 Invited
A Molecular Route to Carbon Nanomembranes, Graphene and Their Hybrids with Tailored Physical and Chemical Properties, A. TURCHANIN, University of Bielefeld, Germany
11:40 am
Invited talk continued.
134
Wednesday Morning, October 31, 2012
8:00 am
In Situ Microscopy and Spectroscopy Focus Topic Room: 7 - Session IS+AS+OX+ET-WeM
Magnetic Interfaces and Nanostructures Room: 6 - Session MI-WeM
In Situ Characterization of Solids: Film Growth, Defects, and Interfaces
Topological Insulators and Rashba
Moderator: P.W. Sutter, Brookhaven National Laboratory IS+AS+OX+ET-WeM1 Revealing Gas-Surface Radical Reaction Mechanisms of Self-Assembled Monolayers by Scanning Tunneling Microscopy, D.Y. LEE, M.M. JOBBINS, S.A. KANDEL, University of Notre Dame
Moderators: M. Donath, Muenster University, Germany, E. Vescovo, Brookhaven National Laboratory MI-WeM1 UP or DOWN? Rashba-type Spin Structures in sp- and dderived Surface States Below and Beyond the Fermi Level, M. DONATH,
In Situ Synchrotron X-Ray Studies of Epitaxial Oxide Thin Film Synthesis Behavior, J.A. EASTMAN, M.J. HIGHLAND, P.H. FUOSS, Argonne National
S.D. STOLWIJK, A. ZUMBÜLTE, S.N.P. WISSING, CH. LANGENKÄMPER, A.B. SCHMIDT, P. KRÜGER, Muenster University, Germany, K. MIYAMOTO, K. SHIMADA, A. KIMURA, Hiroshima University, Japan, K. SAKAMOTO, Chiba University, Japan, R.C. HATCH, P. HOFMANN, Aarhus University, Denmark MI-WeM2 Scanning Tunneling Spectroscopy of Topological Insulators’ Electrically Tunable Electronic Structure, N. LEVY, Center for Nanoscale Sci. and Tech. / NIST, T. ZHANG, Center for Nanoscale Sci. and Tech. / NIST and Maryland NanoCenter / Univ. of Maryland, J. HA, Center for Nanoscale Sci. and Tech. / NIST and Seoul National Univ., Korea, Y. KUK, Seoul National Univ., Republic of Korea, J.A. STROSCIO, Center for Nanoscale Sci. and Tech. / NIST MI-WeM3 Invited Exchange and Rashba Interactions in Thin Film Systems, P. MORAS, Istituto di Struttura della Materia-CNR, Trieste, Italy
9:00 am
Laboratory, T.M. MCCLESKEY, Los Alamos National Laboratory, D.D. FONG, C.M. FOLKMAN, S.K. KEUN, E. PERRET, P.M. BALDO, Argonne National Laboratory, E. BAUER, Q. JIA, Los Alamos National Laboratory Invited talk continued.
Invited talk continued.
9:20 am
IS+AS+OX+ET-WeM5
9:40 am
Germany, L. GU, Max Planck Institute for Intelligent Systems; (Present) Chinese Academy of Sciences, L.P.H. JEURGENS, Max Planck Institute for Intelligent Systems; (Present) Swiss Federal Laboratories for Materials Science and Technology, F. PHILLIPP, E.J. MITTEMEIJER, Max Planck Institute for Intelligent Systems, Germany IS+AS+OX+ET-WeM6 Understanding the Dynamic Electronic Properties of Electrode Materials by In Situ X-ray Absorption Spectroscopy, M. BAGGEHANSEN, J.R.I. LEE, A. WITTSTOCK, M.D. MERRILL, M.A. WORSLEY, T. OGITSU, B.C. WOOD, T. BAUMANN, M. STADERMANN, M. BIENER, J. BIENER, T. VAN BUUREN, Lawrence Livermore National Laboratory
8:20 am
In Situ Imaging of the Nucleation and Growth of Epitaxial Anatase TiO2(001) Films on SrTiO3(001), Y.G. DU, D.J. KIM, T.C.
IS+AS+OX+ET-WeM2
KASPAR, Pacific Northwest National Laboratory, S.E. CHAMBERLIN, University of Wisconsin Milwaukee, I. LYUBINETSKY, S.A. CHAMBERS, Pacific Northwest National Laboratory 8:40 am
IS+AS+OX+ET-WeM3 Invited
Solid-state Convection in Thin Films: Real-time Nanoscale Visualization, Z. WANG, Max Planck Institute for Intelligent Systems,
MI-WeM5 Invited
Photoemission Studies of Spin-Orbit Effects in Graphene and Topological Insulators, O. RADER, Helmholtz-Zentrum Berlin für Materialien und Energie, Germany
Invited talk continued.
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
IS+AS+OX+ET-WeM9
In Situ Studies of Al2O3 ALD Growth and Selfcleaning on III-V Surfaces by STM and XPS, L.N.J. RODRIGUEZ, A. DE
MI-WeM9 Invited
CLERCQ, IMEC, Belgium, M. TALLARIDA, BTU Cottbus, Germany, D. CUYPERS, IMEC, Belgium, J.P. LOCQUET, KU Leuven, Belgium, S. VAN ELSHOCHT, C. ADELMANN, M. CAYMAX, IMEC, Belgium
Brookhaven National Laboratory
11:00 am
IS+AS+OX+ET-WeM10 In Situ Transport Measurement of Kinetically Controlled Bi Atomic Layers, Y. FUJIKAWA, E. SAITOH, Tohoku University, Japan
Invited talk continued.
11:20 am
IS+AS+OX+ET-WeM11
CAMECA IMS Series Advanced Ion Microscopy: High Throughput, Repeatability & Automation, P. PERES, F. DESSE, F.
MI-WeM11
HILLION, M. SCHUHMACHER, Cameca, S.a., France, A.N. DAVIS, CAMECA Instruments, Inc.
NIST and Seoul National Univ., N. LEVY, Center for Nanoscale Sci. and Tech. / NIST, T. ZHANG, Center for Nanoscale Sci. and Tech. / NIST and Maryland NanoCenter / Univ. of Maryland, R.L. KALLAHER, F. SHARIFI, A.A. TALIN, Center for Nanoscale Sci. and Tech. / NIST, Y. KUK, Seoul National Univ., Republic of Korea, J.A. STROSCIO, Center for Nanoscale Sci. and Tech. / NIST
Electronic Scattering on Surfaces of Topological Insulators, T. VALLA,
Scanning Tunneling Microscopy Observation of the Superconducting Gap in CuxBi2Se3, J. HA, Center for Nanoscale Sci. and Tech. /
11:40 am
135
Wednesday Morning, October 31, 2012 Nanometer-scale Science and Technology Room: 12 - Session NS+AS+SS+SP-WeM
Plasma Science and Technology Room: 24 - Session PS+TC-WeM
Nanoscale Catalysis and Surface Chemistry
Atmospheric Plasma Processing for PV, Flexible Electronics (incl. R2R)
Moderator: U.D. Schwarz, Yale University
Moderator: S.A. Vitale, MIT Lincoln Laboratory PS+TC-WeM1 Formation Dynamics and Characterization of Organosilicon Powders in Microwave-Sustained Plasmas at Atmospheric-Pressure, V.
8:00 am
ROY-GAROFANO, A. KILICASLAN, O. LEVASSEUR, L. STAFFORD, M. MOISAN, Universite de Montreal, Canada, C. CÔTÉ, A. SARKISSIAN, Plasmionique, Canada
8:20 am
8:40 am
9:00 am
NS+AS+SS+SP-WeM2 Preparation and Performance of Solid Rocket Propellant Containing In Situ-Synthesized Nanoparticle Catalysts and Fuels, D. REID, R. DRAPER, University of Central Florida, M. JOHNSON, T. ALLEN, A.
PS+TC-WeM2 Infrared Gas Phase Studies in High-Current Dielectric Barrier Discharges Applied in Roll-to-Roll Deposition of Silica-Like Layers at Atmospheric Pressure, S. WELZEL, Eindhoven University of Technology,
DEMKO, E. PETERSEN, Texas A&M University, S.S. SEAL, University of Central Florida
Netherlands, S.A. STAROSTIN, H. DE VRIES, FUJIFILM Manufacturing Europe B.V., Netherlands, M.C.M. VAN DE SANDEN, R. ENGELN, Eindhoven University of Technology, Netherlands PS+TC-WeM3 Invited
NS+AS+SS+SP-WeM3 Catalysts with Superior Catalytic Properties by Turning Gold Catalysis Upside Down: Oxide Particles on Nanoporous Gold, A. WITTSTOCK, Lawrence Livermore National Lab, A. WICHMANN, Univ. Bremen,
Atmospheric Pressure Plasma Processes for Preparation of Si-Based Thin Films, K. YASUTAKE, H. OHMI, T. YAMADA, H. KAKIUCHI, Osaka University,
Germany, M. BAGGE-HANSEN, Lawrence Livermore National Lab, K. FRANK, Univ. Bremen, Germany, M. BIENER, J. BIENER, Lawrence Livermore National Lab, A. ROSENAUER, M. BAEUMER, Univ. Bremen, Germany
Japan
NS+AS+SS+SP-WeM4 Synthesis and Catalytic Activity of WS2 Nanotube Supported Cobalt and Nickel Catalysts Towards Thiophene Hydrodesulfurization, M. KOMARNENI, Z. YU, A. CHAKRADHAR, U. BURGHAUS,
Invited talk continued.
North Dakota State University, Y. TSVERIN, R. POPOVITZ-BIRO, Y. FELDMAN, R. TENNE, Weizmann Institute of Science, Israel 9:20 am
PS+TC-WeM5 Deposition of Organic-Inorganic Nanocomposite Coatings by Aerosol-Assisted Atmospheric Pressure DBDs, F. FANELLI, Institute of
NS+AS+SS+SP-WeM5 Invited
Size-Selected Clusters as Model Catalysts for Heterogeneous Chemistry, M.G. WHITE, Brookhaven National Laboratory, Y. YANG, J. ZHOU, Stony
Inorganic Methodologies and Plasmas (IMIP) - CNR, Bari, Italy, A.M. MASTRANGELO, F. FRACASSI, University of Bari Aldo Moro - IMIP CNR, Bari, Italy
Brook University, J. ZHOU, Brookhaven National Laboratory 9:40 am
PS+TC-WeM6 Diagnostic of Atmospheric-Pressure He Discharges Controlled by Dielectric Barriers in Presence of Complex Polymer Samples, O. LEVASSEUR, L. STAFFORD, Université de Montréal, Canada, N.
Invited talk continued.
GHERARDI, N. NAUDE, CNRS-Laplace, France 10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
NS+AS+SS+SP-WeM9 Invited
PS+TC-WeM9 Invited
10:40 am
NSTD Recognition Award Lecture: High-Resolution Scanning Tunneling Microscopy Studies of Surface Reactions on Transition Metal Oxide Surfaces, F. BESENBACHER*, Aarhus University, Denmark
Modified Dielectric Barrier Discharges for Display Materials Processing, G.Y. KIM, Sungkyunkwan University, Korea, J.B. PARK, SKKU Advanced Institute of Nano Technology (SAINT), Korea, G.Y. YEOM, Sungkyunkwan University & SKKU Advanced Institute of Nano Technology (SAINT), Korea
11:00 am
Invited talk continued.
Invited talk continued.
11:20 am
NS+AS+SS+SP-WeM11 Charge Exchange and Molecule/Metal Coupling in Fulvalene Surface Chemistry, G. ROJAS, B.G. SUMPTER, Oak Ridge National
PS+TC-WeM11
Laboratory, J.A. SCHLUETER, Argonne National Laboratory, P. MAKSYMOVYCH, Oak Ridge National Laboratory
J. YIM, V. RODRIGUEZ-SANTIAGO, A. WILLIAMS, J. HIRVONEN, D. PAPPAS, U.S. Army Research Laboratory
NS+AS+SS+SP-WeM12 Subpicosecond-pulse Photoinduced Chemistry on Nanoscale Palladium Model Catalyst Surfaces, A. BHATTACHARYA,
PS+TC-WeM12 Etching of PTFE by Atmospheric Plasmas: Effect of the Gas Composition on the Reactions Processes and Hydrophobicity, J. HUBERT†, T. DUFOUR, N. VANDENCASTEELE, Université Libre de Bruxelles, Belgium, S.
11:40 am
Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition of Hydrophobic Thin Film Coatings Using Liquid Precursors,
Brookhaven National Laboratory, R. PALOMINO, J.C. LOFARO, Stony Brook University, H. PARK, M.G. WHITE, N. CAMILLONE, Brookhaven National Laboratory
* NSTD Recognition Award † Coburn & Winters Student Award Finalist
DESBIEF, R. LAZZARONI, Materia Nova Research Center, Belgium, F. RENIERS, Université Libre de Bruxelles, Belgium
136
Wednesday Morning, October 31, 2012 Scanning Probe Microscopy Focus Topic Room: 16 - Session SP+AS+BI+ET+MI+NM+NS+SS+TF-WeM Probe-Sample Interactions, Nano-Manipulation and Fabrication
Plasma Science and Technology Room: 25 - Session PS-WeM Advanced BEOL/Interconnect Etching
Moderators: S. Allen, The University of Nottingham, UK, A.-P. Li, Oak Ridge National Laboratory
Moderator: A. Agarwal, Applied Materials Inc. 8:00 am
PS-WeM1 Invited
The Role and Impact of Metal Hard Masks on BEOL Etch Processes, C. LABELLE, R. SRIVASTAVA, R. KOSHY, T.Q. CHEN, F. WU, A.P. LABONTE, GLOBALFOUNDRIES, Y. MIGNOT, STMicroelectronics, M. BEARD, B.G. MORRIS, Y. YIN, IBM Systems and Technology Group
8:20 am
8:40 am
Invited talk continued.
SP+AS+BI+ET+MI+NM+NS+SS+TF-WeM2 Invited
Controlled Coupling of Silicon Atomic Quantum Dots at Room Temperature: A Basis for Atomic Electronics?, R.A. WOLKOW, University of Alberta and The National Institute for Nanotechnology, Canada, J. PITTERS, The National Institute for Nanotechnology, Canada, G. DILABIO, M. TAUCER, P. PIVA, L. LIVADARU, University of Alberta and The National Institute for Nanotechnology, Canada Invited talk continued.
PS-WeM3 Evaluation of Chemistry Effects of Fluorcarbon Molecules for High Aspect Ratio Silicon Oxide Etch, C.M. ANDERSON, R. GUPTA, C. DUSSARRAT, Air Liquide
9:00 am
9:20 am
9:40 am
PS-WeM4 Dielectric RIE Challenges Associated to Trench First Metal Hard Mask at 64 nm Pitch and Below, Y. FEURPRIER, L. WANG, Tokyo Electron
SP+AS+BI+ET+MI+NM+NS+SS+TF-WeM4 Atomic Forces and Energy Dissipation of a Bi-Stable Molecular Junction, C. LOTZE, Freie Universtiät
Tech. Center, America, LLC, S. NAKAMURA, Tokyo Electron Miyagi Ltd., Japan, J. STILLAHN, Y. CHIBA, K. KUMAR, Tokyo Electron Tech. Center, America, LLC, Y. MIGNOT, STMicroelectronics, E. SODA, Renesas Electonics, R. KOSHY, R. SRIVASTAVA, GLOBALFOUNDRIES, Y.J. PARK, Samsung Electronics Co. Ltd., J. ARNOLD, IBM Research Group PS-WeM5 Interfacial Characterization of Patterned Porous Low-k Nanostructure using Infrared and X-ray Photoelectron Spectroscopy, S. RIMAL, N. ROSS, S. KOSKEY, T. MUKHERJEE, O. CHYAN, University of North Texas
Berlin, Germany, M. CORSO, K.J. FRANKE, F.V. OPPEN, J.I. PASCUAL, Freie Universität Berlin, Germany
PS-WeM6 Separation of Radical and Photon Effects on Nanoporous Lowk Films, J. LEE*, D.B. GRAVES, University of California Berkeley
Acetylene on Cu(111): Imaging a Molecular Pattern with a Constantly Rearranging Tip, Y. ZHU, J. WYRICK, SP+AS+BI+ET+MI+NM+NS+SS+TF-WeM5
K.D. COHEN, K. MAGNONE, C. HOLZKE, D. SALIB, Q. MA, D.Z. SUN, L. BARTELS, University of California Riverside SP+AS+BI+ET+MI+NM+NS+SS+TF-WeM6 Atomic Scale Imaging and Electronic Structure of Trimethylaluminum Deposition on III-V Semiconductor (110) Surfaces, T.J. KENT†, M. EDMONDS, E. CHAGAROV, A.C. KUMMEL, University of California San Diego
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
PS-WeM9 Diamond-like Amorphous Carbon Layer Deposited by Inductively Coupled Plasma System for Next Generation Dry Etching Hard Mask, S.J. PARK, W. KIM, G. CHOI, J. WON, Samsung Electronics Co. Ltd.,
SP+AS+BI+ET+MI+NM+NS+SS+TF-WeM9 A New Experimental Method to Determine the Torsional Spring Constants of Microcantilevers, G. HAEHNER, J.D. PARKIN, University of St Andrews, UK
Republic of Korea 11:00 am
11:20 am
11:40 am
PS-WeM10 Evaluation of Novel Etch Gas for BEOL Interconnect Pattern Transfer at 14nm and 22nm Technologies, R.L. BRUCE, IBM T.J. Watson
SP+AS+BI+ET+MI+NM+NS+SS+TF-WeM10
Research Center, T. SUZUKI, M. NAKAMURA, Zeon Chemicals L.P., S. ENGELMANN, E.A. JOSEPH, E.M. SIKORSKI, N.C.M. FULLER, IBM T.J. Watson Research Center, A. ITOU, Zeon Corporation
PORTOLES, P.J. CUMPSON, Newcastle University, UK
PS-WeM11 Dry Etching Characteristics Related to TiN Material Properties, A.P. LABONTE, F. WU, V. ARUNACHALAM, S. PATIL, GLOBALFOUNDRIES, C. NIU, ST Microelectronics, France, T.Q. CHEN, GLOBALFOUNDRIES, E. WORNYO, B.G. MORRIS, Y. YIN, IBM Microelectronics, Y. MIGNOT, ST Microelectronics, France
SP+AS+BI+ET+MI+NM+NS+SS+TF-WeM11 Invited
PS-WeM12 Dielectric Etch Selectivity Improvements using Pulsed Plasma, G. DELGADINO, E. HUDSON, L. ROMM, A. FONG, J. NAGARAH, Lam Research
Invited talk continued.
* Coburn & Winters Student Award Finalist † ASSD Student Award Finalist
A Torsional Device for Easy, Accurate and Traceable Force Calibration of AFM Cantilevers, J.F.
Nanoscale Surface Assembly by Single-Molecule Cut-and-Paste, H.E. GAUB, Ludwig-Maximilians Universitat, Germany
137
Wednesday Morning, October 31, 2012 Surface Science Room: 22 - Session SS+OX-WeM
Surface Science Room: 21 - Session SS-WeM
Synthesis and Characterization of Oxides
Chemisorption on Metallic Surfaces
SS+OX-WeM1 Invited
SS-WeM1
Moderator: J.M. Millunchick, University of Michigan 8:00 am
Moderator: C.H. Sykes, Tufts University
An Atomic-scale Study of the Adsorption, Assembly and Reactivity of Methanol with Model Cu, O/Cu and Pd/Cu Alloy Surfaces with STM, TPD and XPS, T. LAWTON, M. BOUCHER, A. BABER, G. KYRIAKOU,
Structure and Dynamics of Oxide Surfaces and Interfaces, X. PAN, University of Michigan
C.H. SYKES, Tufts University 8:20 am
SS-WeM2 Imaging the Role of Ligand Groups in Surface Coordination Chemistry/Networks: Cyano- vs. Isocyano Groups, L. BARTELS, M. LUO, S.
Invited talk continued.
BOBEK, K.D. COHEN, C. WANG, R. HOOLEY, University of California Riverside
8:40 am
9:00 am
9:20 am
9:40 am
SS+OX-WeM3 Capturing Ion-Solid Interactions with MOS Structures, R. SHYAM, E.S. SRINADHU, S. CHAMBERS, J.E. HARRISS, W.R. HARRELL, C.E. SOSOLIK, Clemson University
SS-WeM3 Chemisorption, Ordering, and Structural Transitions in the Terephthalic Acid Monolayer and Bilayer on Cu(100), S.L. TAIT, Indiana University - Bloomington
SS+OX-WeM4 Synthesis and Characterization of Yttrium Aluminum Garnet SS-WeM4 Attachment and Nanoscale Patterning of Alkyne Groups on and Lanthanum Zirconate Particles, R.R. HARL*, S.L. GOLLUB, G. WALKER, B.R. Gold via Non-thermal Pathways, Q. LI, Oak Ridge National Laboratory, C.B. HAN, ROGERS, Vanderbilt University
North Carolina State University, M. FUENTES-CABRERA, H. TERRONES, B.G. SUMPTER, W.C. LU, Oak Ridge National Laboratory, J. BERNHOLC, North Carolina State University, Z. GAI, A.P. BADDORF, P. MAKSYMOVYCH, M.H. PAN, Oak Ridge National Laboratory
SS+OX-WeM5 X-ray Linear Dichroism of Epitaxial (Fe,N) Co-Doped Rutile TiO2 Thin Films, T.C. KASPAR, Pacific Northwest National Lab, A. NEY, Univ. of
SS-WeM5 Molecular Structure of a Mixed NH3-O2 Overlayer on Pt(111), Z. LIANG, University of Illinois at Chicago, H. KIM, Y. KIM, RIKEN, Japan, M. TRENARY, University of Illinois at Chicago
Duisburg-Essen, Germany, A.N. MANGHAM, Pacific Northwest National Lab, S.M. HEALD, Advanced Photon Source, Argonne National Lab, Y. JOLY, Institut Néel, CNRS et Univ. Joseph Fourier, France, V. NEY, Univ. of Duisburg-Essen, Germany, F. WILHELM, A. ROGALEV, F. YAKOU, European Synchrotron Radiation Facility, S.A. CHAMBERS, Pacific Northwest National Lab SS+OX-WeM6 Unified Picture of the Excess Electron Distribution at the TiO2(110) Surface, P. KRUEGER, Institut Carnot de Bourgogne, France, J. JUPILLE, Institut des Nanosciences de Paris, France, S. BOURGEOIS, B. DOMENICHINI, Institut Carnot de Bourgogne, France, A. VERDINI, L. FLOREANO, A. MORGANTE, Laboratorio TASC, Italy
SS-WeM6 Enthalpies of Formation of Formate Intermediates Adsorbed on Pt(111) by Microcalorimetry, T.L. SILBAUGH, E.M. KARP, C.T. CAMPBELL, University of Washington
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
SS+OX-WeM9 XPS Satellite Structure and Covalent Bonding, P.S. BAGUS, University of North Texas, E.S. ILTON, Pacific Northwest National Laboratory, C.J. NELIN, Consultant
SS-WeM9
11:00 am
SS+OX-WeM10 Surface of BaTiO3 (001): STM and STS Study, E. MORALES, J. MARTIREZ, A.M. RAPPE, D.A. BONNELL, University of Pennsylvania
SS-WeM10
Adsorption Energy of Oxygen on Pt(111): Errors in Calorimetry Values and Consequences for the Enthalpy of Related Hydroxyl Species, C.T. CAMPBELL, E.M. KARP, University of Washington
Mechanism of Halogenated Solvent Pre-Treatment of Polymeric Substrates to Significantly Improve Noble Metal Thin Film Adhesion, B.H. AUGUSTINE, W.C. HUGHES, A.K. MO, James Madison University, H.M. MEYER, Oak Ridge National Laboratory, T.C. DEVORE, James Madison University
11:20 am
11:40 am
SS+OX-WeM11
Synthesis and Characterization of White Light Emitting CaxSr1-xAl2O4:Tb3+,Eu3+ Phosphor, S.K. SHAAT, H.C. SWART, O.M.
SS-WeM11
HREELS Investigation of Hydrocarbon Dehydrogenation on Oxide-Supported Platinum Nanoparticles, M.H.C. VAN SPYK, K.A. PERRINE,
NTWAEABORWA, University of the Free State, South Africa
J.C. HEMMINGER, University of California Irvine
SS+OX-WeM12 A Novel 2-D Cu-Tungstate (CuWOx) Phase on Cu(110), F.P. NETZER, M. DENK, D. KUHNESS, M. WAGNER, S. SURNEV, University of Graz, Austria, F.R. NEGREIROS, L. SEMENTA, G. BARCARO, A. FORTUNELLI, CNR-IPCF Pisa, Italy
SS-WeM12
Scanning Tunneling Microscopy Investigation of the Conversion of Propylene and Butylene to Carbon Clusters on Pt(111), G.F. SUN, S.S. KHAN, A.B. DE LA REE, J.C. HEMMINGER, University of California Irvine
138 * Morton S. Traum Award Finalist
Wednesday Morning, October 31, 2012 Thin Film Room: 11 - Session TF+SE+NS-WeM
Thin Film Room: 10 - Session TF-WeM
Glancing Angle Deposition (GLAD)
Thin Films for Encapsulation, Packaging, and Biomedical Devices
Moderator: T. Karabacak, University of Arkansas at Little Rock 8:00 am
8:20 am
TF+SE+NS-WeM1 Invited
Tunable-Refractive-Index Materials – A New Class of Optical Thin-Film Materials with Applications in Solid-State Lighting and Solar Photovoltaics, E.F. SCHUBERT, Rensselaer Polytechnic Institute
Moderator: L.W. Rieth, University of Utah TF-WeM1 Optimizing a Spatial Atomic Layer Deposition Cell for High Throughput, Low Temperature, Roll-to-Roll Applications, M.J. DALBERTH, L. LECORDIER, M.J. SERSHEN, M. RUFFO, R. COUTU, G. SUNDARAM, J.S. BECKER, Cambridge Nanotech, Inc.
Encapsulation of Implantable Devices by Atomic Layer Deposited Al2O3 and Parylene C Bi-layer, X. XIE, L.W. RIETH, F. SOLZBACHER,
Invited talk continued.
TF-WeM2
University of Utah
8:40 am
9:00 am
TF+SE+NS-WeM3 Nanostructured Homogenous CdSe/TiO2 Composite Visible Light Photoanodes Fabricated by Oblique Angle Codeposition,
TF-WeM3 Invited
G.K. LARSEN, University of Georgia, B.C. FITZMORRIS, University of California Santa Cruz, C. LONGO, University of Campinas, Brazil, J.Z. ZHANG, University of California Santa Cruz, Y.-P. ZHAO, University of Georgia
DuPont Central Research and Development
Control the Biaxial Texture of Vertically Aligned Nanostructures using Oblique Angle Sputtering Deposition with Substrate Flipping Rotation, G.-C. WANG, L. CHEN, T.-M. LU, Rensselaer
Invited talk continued.
Ultra-barrier Technology for Moisture-Sensitive Electronics, P.F. CARCIA,
TF+SE+NS-WeM4
Polytechnic Institute
9:20 am
TF+SE+NS-WeM5 Flux Engineering to Control In-Plane Crystal and Morphological Orientation, J.M. LAFORGE, G. INGRAM, M.T. TASCHUK, M.J.
TF-WeM5 Multilayer Barrier Coatings for Organic Photovoltaics, A.M. COCLITE, F. DE LUCA, K.K. GLEASON, Massachusetts Institute of Technology
BRETT, University of Alberta, Canada
TF+SE+NS-WeM6 Bi-axial Texture Development in AlN Layers during Offaxis Sputter Deposition, R. DENG, D. GALL, Rensselaer Polytechnic Institute
TF-WeM6 Preparation of Hydrophobic Coatings on Si/SiO2 by Incorporation of Nano- and Microdiamond in a Layer-By-Layer Deposition, A. DIWAN, J. WILCOCK, M.R. LINFORD, Brigham Young University
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
TF+SE+NS-WeM9 Engineered Indium Tin Oxide Nanowhiskers via Vapour Liquid Solid Glancing Angle Deposition, A.L. BEAUDRY, R.T. TUCKER, J.M.
9:40 am
LAFORGE, M.T. TASCHUK, University of Alberta, Canada, M.J. BRETT, University of Alberta, Canada and The National Institute for Nanotechnology
11:00 am
TF+SE+NS-WeM10 CoPt Nanopillars for Advanced Media by Glancing Angle Deposition, H. SU, A. NATARAJARATHINAM, S. GUPTA, The University of Alabama
11:20 am
TF+SE+NS-WeM11 Through-post Electrical Characterization of GLAD Thin Films, A. LALANY, R.T. TUCKER, M.T. TASCHUK, University of Alberta, Canada, M.D. FLEISCHAUER, University of Alberta and The National Institute for Nanotechnology, Canada, M.J. BRETT, University of Alberta, Canada
11:40 am
TF+SE+NS-WeM12 Direct Label-Free Detection of microRNA Using a Multiwell SERS Chip Fabricated By Oblique Angle Deposition, J.L. ABELL, University of Georgia, J.M. GARREN, Georgia Health Science University, J.D. DRISKELL, Illinois State University, R.A. TRIPP, Y.-P. ZHAO, University of Georgia
139
Wednesday Morning, October 31, 2012 Vacuum Technology Room: 14 - Session VT+AS+SS-WeM Surface Analysis and Vacuum Manufacturing for Accelerators
Tribology Focus Topic Room: 19 - Session TR+SE-WeM Tribology and Wear of Low-Friction Coatings and Materials Moderator: D.L. Burris, University of Delaware 8:00 am
8:20 am
TR+SE-WeM1 Invited
Seeing Things as They Really are: In Situ Studies of Materials in Application Environments and the Development of TemperatureAdaptive Nanocomposites, C. MURATORE, Air Force Research Laboratory, J.J. HU, J.E. BULTMAN, UDRI/Air Force Research Laboratory, A.A. VOEVODIN, Air Force Research Laboratory Invited talk continued.
Moderator: M.L. Stutzman, Thomas Jefferson National Accelerator Facility VT+AS+SS-WeM1 Manufacturing and Welding Processes for TPS Large Aluminum Bending-Chambers and 14 m Vacuum Cells, C.L. CHEN, C.C. CHANG, C.K. CHAN, Y.C. YANG, T.Y. LEE, G.Y. HSIUNG, J.R. CHEN, NSRRC, Taiwan, Republic of China VT+AS+SS-WeM2 A High Power Electron Beam Stop for Cornell ERL Prototype Injector, X. LIU, Y. LI, K.W. SMOLENSKI, I. BAZAROV, B.M. DUNHAM, Cornell University
8:40 am
TR+SE-WeM3 Tribological Surface Chemistry of Model Lubricant Additives Measured in Ultrahigh Vacuum, W.T. TYSOE, University of Wisconsin Milwaukee
Ion Pump Starting Behaviour at High Pressures Influence of Pump Design Diode / Triode and Power Supply, M. THIERLEY, VT+AS+SS-WeM3
C. PAOLINI, Agilent Technologies, Italy
9:00 am
TR+SE-WeM4 Nanomechanical and Nanotribological Properties of ZnO Thin Films, E. BROITMAN, L. MARTÍNEZ DE OLCOZ SAINZ, Linköping University,
VT+AS+SS-WeM4 Invited
Superconducting Niobium for Accelerator Cavities: Status and Prospects, M.J. KELLEY, Jefferson Lab and College of William & Mary
Sweden, C. BOJORGE, Cinso, Citedef-Conicet, Argentina, J.B. MILLER, Carnegie Mellon University, H. CANEPA, Cinso, Citedef-Conicet, Argentina, L. HULTMAN, Linköping University, Sweden 9:20 am
TR+SE-WeM5 Tribological and Compositional Properties of Electroless Nickel-Boron Coatings Annealed at Various Temperatures, K. GILLEY,
Invited talk continued.
University of Florida, Y. RIDDLE, UCT Coatings Inc., S.S. PERRY, University of Florida
TR+SE-WeM6 Friction and Wear Behavior of Thin Plasma Electrolytic Oxidation Coatings on Aluminum Alloy Al319 Substrate, H. EILIAT, X. NIE,
VT+AS+SS-WeM6
University of Windsor, Canada
Z. LI, The College of William and Mary, J.R. SKUZA, National Institute of Aerospace, C. CLAVERO, R.A. LUKASZEW, The College of William and Mary
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
TR+SE-WeM9 First Contact: SPR and SERS Studies of the Initial Transfer Behavior of PTFE, K.L. HARRIS, B.A. KRICK, D.W. HAHN, W.G. SAWYER, University
VT+AS+SS-WeM9
of Florida
BERINGER, J.B. HACKETT, W.M. ROACH, R.A. LUKASZEW, The College of William and Mary
TR+SE-WeM10 Tribological Investigations of Octadecylphosphonic Acid (ODP) and Octadecyltrichlorosilane (OTS) Self-Assembled Monolayers: A Comparative Study of MEMS-type Interfaces, N. ANSARI, Auburn University,
VT+AS+SS-WeM10
9:40 am
11:00 am
11:20 am
Niobium Nitride Thin Films and Multilayers for Superconducting Radio Frequency Cavities, W.M. ROACH*, D.B. BERINGER,
S. BARKLEY, C. BOUXSEIN, M. DERAM, N. EIGENFELD, St. Olaf College, O. MATTHEWS, Luther College, A. PODA, W.R. ASHURST, Auburn University, B.P. BOROVSKY, St. Olaf College, E. LINN-MOLIN, E.E. FLATER, Luther College TR+SE-WeM11 Diffusion of Gold Islands on Graphene, B. DAWSON, M. LODGE, M. ISHIGAMI, University of Central Florida
Characterization of Anisotropic Surface Morphology in Epitaxial Superconducting Thin Films by Wavelet Analysis, D.B.
NbN-AlN-Nb Multilayer Thin Films for Superconducting Radio Frequency Cavities, Z. LI, W.M. ROACH, D.B. BERINGER, C. CLAVERO, R.A. LUKASZEW, College of William and Mary
VT+AS+SS-WeM11 Effect of Condensed Argon on Hydrogen Pumping in Commercial Cryogenic Pump, S. BHATT, K.A. JADEJA, A.K. PRAJAPATI, Institute for Plasma Research, India, T. PURABIA, Institute for Plasma Research, Inda, P.M. CHAVDA, Institute for Plasma Research, India
11:40 am
TR+SE-WeM12 Synthesis and Tribology of MoS3 Nanoparticles, J.R. LINCE, The Aerospace Corporation, A.M. PLUNTZE, Colorado State University, S.A. JACKSON, The Aerospace Corporation
140 * ASSD Student Award Finalist
NOTES
141
Wednesday Lunch, October 31, 2012 Exhibitor Technology Spotlight Room: West Hall - Session EW-WeL Exhibitor Technology Spotlight
Moderator: D. Surman, Kratos Analytical Inc. 12:00 pm
EW-WeL1 Nanoparticle Coating Technology for Vacuum Deposition, A.H. KEAN, S. SARANU, M. GREEN, L. ALLERS, Mantis Deposition Ltd., UK
12:20 pm
EW-WeL2
12:40 pm
EW-WeL3 Physics-based Simulation for Semiconductor Processing Optimization, K. JAIN, N. SOLANKI, ESI Group
Using the Ipad in PVD Applications, C. MALOCSAY, Semicore
Passive Thermal Actuator, I. MILLER, MEWASA North America, Inc.
1:00 pm
EW-WeL4
1:20 pm
EW-WeL5 Bipolar Technoloogy for AZO Sputtering, P. OZIMEK, W. GŁAZEK, K. RUDA, A. KLIMCZAK, A. GIERAŁTOWSKI, HUETTINGER Electronic Sp. z o.o., Poland
1:40 pm
EW-WeL6 Novel Dual Mode Air Photoemission and Kelvin Probe System for Work Function Analysis of Nanometer Films, I.D. BAIKIE, KP Technology, UK
142
Wednesday Afternoon, October 31, 2012 Applied Surface Science Biointerphases Focus Topic: Bioimaging Room: 20 - Session AS+NS+SS+TF-WeA Room: 23 - Session BN+AS-WeA 3D Imaging & Nanochemical Analysis - Part 2 (2:00-3:20 pm)/ Advanced Data Analysis and Instrument Control (4:00-6:00 pm) Bioimaging Moderators: V.S. Smentkowski, General Electric Global Research 2:00 pm
Center, M.R. Linford, Brigham Young University, S.J. Pachuta, 3M Company
Moderator: M. Grunze, University of Heidelberg, Germany
AS+NS+SS+TF-WeA1 Invited
BN+AS-WeA1 Invited
From Atomic Scale to Materials Behavior: Using Atom-Probe Tomography to Understand the Behavior of Alloys and Ceramics, E.A.
Label-free Non-Invasive Imaging of Live Cells by Raman MicroSpectroscopy, I. NOTINGHER, University of Nottingham, UK
MARQUIS, University of Michigan
2:20 pm
Invited talk continued.
Invited talk continued.
2:40 pm
AS+NS+SS+TF-WeA3 Three Dimensional Atomic Scale Characterization of Binary and Complex Oxides using Atom Probe Tomography, A. DEVARAJ,
BN+AS-WeA3 Perfluoropentane Gas and Liquid Filled Hollow Silica Micro/Nano Spheres for Ultrasound Guided Surgery and HIFU Therapy,
R. COLBY, D.E. PEREA, S. THEVUTHASAN, EMSL, Pacific Northwest National Laboratory
A. LIBERMAN, H.P. MARTINEZ, Z. WU, C.V. BARBACK, S.L. BLAIR, Y. KONO, R.F. MATTREY, W.C. TROGLER, A.C. KUMMEL, University of California San Diego
AS+NS+SS+TF-WeA4 Atom Probe Tomography of Complex Heterogeneous Low Dimensional Materials, S. THEVUTHASAN, A. DEVARAJ, R. COLBY, D.E. PEREA, V. SUBRAMANIAN, V. SHUTTHANANDAN, Pacific Northwest National Laboratory
BN+AS-WeA4 Differentiation of Breast Cancer Cell Lines with ToF-SIMS, L.J. GAMBLE, M. ROBINSON, University of Washington, F. MORRISH, D. HOCKENBERY, Fred Hutchinson Cancer Research Center
3:20 pm
BREAK
BREAK
3:40 pm
BREAK
BREAK
4:00 pm
AS+NS+SS+TF-WeA7 Upgrading a 25 Year Old ims-4f Magnetic Sector SIMS Instrument: Teaching an Old Dog New Tricks and Keeping Research in its Future, A.J. FAHEY, B.E. NAES, G. HAGER, Pacific Northwest
BN+AS-WeA7 Invited
National Laboratory
(ICSN), France
AS+NS+SS+TF-WeA8 Automated Processing of X-ray Photo-Electron Spectra, K. MACAK, E. MACAK, S.J. COULTAS, S.J. HUTTON, A.J. ROBERTS, R.
Invited talk continued.
3:00 pm
4:20 pm
Biological Applications of Lipid Imaging with Cluster-TOF-SIMS and MALDI-TOF, A. BRUNELLE, CNRS, Institut de Chimie des Substances Naturelles
RASO, S.J. PAGE, C.J. BLOMFIELD, Kratos Analytical Ltd, UK
4:40 pm
5:00 pm
5:20 pm
5:40 pm
AS+NS+SS+TF-WeA9
Correlating Structure and Chemistry – A Multitechnique Study using Light Microscopy (LM), SEM and XPS, M.L.
BN+AS-WeA9 ToF-SIMS Image Analysis of Mouse Diaphragm Muscle Cross-Sections, D.J. GRAHAM, N.P. WHITEHEAD, S.C. FROEHNER, D.G. CASTNER,
PACHOLSKI, P.Y. EASTMAN, The Dow Chemical Company
University of Washington
AS+NS+SS+TF-WeA10
Meet Challenges in Processing Large Datasets Generated from High Resolution Mass Spectrometry, S. RYU, M. THOMAS,
BN+AS-WeA10 ToF-SIMS Characterisation of the Distribution and Permeation of Topically Applied Pharmaceuticals, D.J. SCURR, University of
G. LIN, K. KLEESE-VAN DAM, J. CARSON, E. STEPHAN, J. LIU, J. LASKIN, D.S. LI, Pacific Northwest National Laboratory
Nottingham, UK, A. JUDD, Keele University, UK, K. WAN, University of Central Lancashire, UK, J. HEYLINGS, Dermal Technology Laboratory Ltd., UK, G. MOSS, Keele University, UK
AS+NS+SS+TF-WeA11 Invited
BN+AS-WeA11 Coherent X-ray Microscopy of Vitrified Biological Samples, A. ROSENHAHN, Ruhr-University Bochum, Germany, T. GORNIAK, T. SENKBEIL, A. BUCK, M. BECKERS, M.H. GRUNZE, Karlsruhe Institute of Technology, Germany
Invited talk continued.
BN+AS-WeA12 Characterization of Nanoparticles Implanted into Tissues for Enhancement of Ion-Mobility Mass Spectrometry Surface Imaging of Sagittal Brain Sections, E.K. LEWIS, Ionwerks, Inc., J.F. MOORE, MassThink, T.F.
Multivariate Analysis of Infrared and Raman Microspectroscopic Data for Medical Diagnostic Applications, M. DIEM, Northeastern University
EGAN, Ionwerks, Inc., B. CHEN, B. BRINSON, Rice University, V.M. WOMACK, D. BARBACCI, Ionwerks, Inc., R. HAUGE, Rice University, A.S. WOODS, National Institute on Drug Abuse / IRP, J.A. SCHULTZ, Ionwerks, Inc.
143
Wednesday Afternoon, October 31, 2012 Electronic Materials and Processing Room: 9 - Session EM+OX-WeA Oxides and Dielectrics for Novel Devices and Ultra-dense Memory
Energy Frontiers Focus Topic Room: 15 - Session EN+TF-WeA Thin Films for Energy Applications
Moderators: J.F. Conley, Oregon State University, J. Kim, The University of Texas at Dallas 2:00 pm
Moderator: S. Maldonado, University of Michigan
EM+OX-WeA1 Invited
EN+TF-WeA1 Invited
Dielectric Requirements for a Novel Tunnel-FET Based on RoomTemperature Superfluidity in Graphene Double Layers, L.F. REGISTER, X.
Batteries and Battery Materials by Vapor Deposition, N. DUDNEY, Oak Ridge National Laboratory
MAU, D. REDDY, D. BASU, W. JUNG, I. SODEMAN, D. PESIN, A. HASSIBI, A.H. MACDONALD, S.K. BANERJEE, University of Texas at Austin 2:20 pm
2:40 pm
3:00 pm
Invited talk continued.
Invited talk continued.
EM+OX-WeA3 Invited
EN+TF-WeA3
University of Notre Dame
CARTER, K.S. LAU, Drexel University
Invited talk continued.
EN+TF-WeA4 Silicon Carbide Nanostructures for Micro-supercapacitor Applications, J.P. ALPER, M. VINCENT, C. CARRARO, R. MABOUDIAN, University of
Chemical Vapor Deposition of Polythiophenes: Practical Considerations and Applications in Energy Storage Devices, S. NEJATI, Z.
Interfaces and Surfaces in Tunnel Field-effect Transistors, G. XING,
California Berkeley
3:20 pm
BREAK
BREAK
3:40 pm
BREAK
BREAK
4:00 pm
EM+OX-WeA7 Resistive Switching Characteristics of Al2O3/TiO2 Bilayer ReRAM dependent on Al2O3 Thickness, H.Y. JEON, J.S. LEE, J.G. PARK, W.C.
EN+TF-WeA7
JANG, H.T. JEON, Hanyang University, Korea
Efficient Radiative and Non-Radiative Energy Transfer from Quantum Dots to Silicon Nanomembrane. Evidence of Waveguiding Phenomena, O. SEITZ, H.M. NGUYEN, W. PENG, YU.N. GARTSTEIN, Y.J. CHABAL, A.V. MALKO, University of Texas at Dallas
4:20 pm
EM+OX-WeA8 High- k SrTiO3 Dielectric by Plasma-Assisted Atomic Layer Deposition, N.Y. GARCES, D.J. MEYER, B.P. DOWNEY, V.D. WHEELER, D.W.
EN+TF-WeA8 Supercapacitors for On-Chip Energy Storage, P. ALGARINAMARIS, J. WANG, S. THOMAS, University of South Florida
ZAPOTOK, C.R. EDDY, JR., U.S. Naval Research Laboratory
4:40 pm
5:00 pm
Synthesis of a Thin-Film Yttria-Stabilized-Zirconia (Y2O3ZrO2) Thin Films by Radical Enhanced Atomic Layer Deposition for μSolid Oxide Fuel Cell Applications, J. CHO, D. MEMBRENO, B. DUNN, J.P.
EM+OX-WeA9 Invited
EN+TF-WeA9
Electronics LLC, F. YESILKOYA, Univ. of Maryland, S. POTBHARE, CoolCAD Electronics, LLC, M. PECKERAR, Univ. of Maryland, A. AKTURK, CoolCAD Electronics, LLC, K. CHOI, Univ. of Maryland, W. CHURAMAN, U.S. Army Research Lab, N.K. DHAR, DARPA/MTO Invited talk continued.
CHANG, University of California, Los Angeles
Micro-Antenna Coupled Nano-MIM Diodes: Modeling, Design, Processing and Application, N. GOLDSMAN, Univ. of Maryland, CoolCAD
EN+TF-WeA10 ALD-enabled Tunneling and Transparent Conductive Oxide Layers for Novel Silicon Nanowire Solar Cells, M. TOIVOLA, Picosun, Finland, C.L. DEZELAH, Picosun USA, LLC
5:20 pm
5:40 pm
EM+OX-WeA11 High-Electron-Mobility SiGe on Sapphire Substrate for Next Generation Ultrafast Chipsets, H.J. KIM, Y. PARK, National Institute of
EN+TF-WeA11
Effect of Top Electrodes on the Photovoltaic Properties of Ferroelectric PLZT Thin Film Capacitors, V. NAMPOORI, S. KOTRU, The
Aerospace (NIA), H.-B. BAE, Korea Advanced Institute of Science and Technology, S.H. CHOI, NASA Langley Research Center (NASA LaRC)
University of Alabama
EM+OX-WeA12
Fabrication and Characterization of Metal-InsulatorInsulator-Metal (MIIM) Tunnel Diodes, A.N. NASIR, J.F. CONLEY, Oregon State
EN+TF-WeA12 Synthesis of Nano-structured Zn3P2 as a Solar Cell Absorber, P.S. VASEKAR, S.P. ADUSUMILLI, D. VANHART, T. DHAKAL, Binghamton
University
University
144
Wednesday Afternoon, October 31, 2012 Exhibitor Technology Spotlight Room: West Hall - Session EW-WeA
Graphene and Related Materials Focus Topic Room: 13 - Session GR+AS+EM+NS+SS-WeA
Exhibitor Technology Spotlight
Dopants and Defects in Graphene; Graphene Interfaces with Other Materials
Moderator: D. Surman, Kratos Analytical Inc. 2:00 pm
Moderator: D. Gunlycke, Naval Research Laboratory GR+AS+EM+NS+SS-WeA1 Increasing Interface Bonding and Tuning Doping Behavior at Metal-Graphene-Metal Sandwich Contact, C. GONG, R.M. WALLACE, K.J. CHO, Y.J. CHABAL, The University of Texas at Dallas
2:20 pm
GR+AS+EM+NS+SS-WeA2 Defects in Two-Dimensional Materials and their Heterostructures, L. ADAMSKA, I.I. OLEYNIK, University of South Florida
2:40 pm
GR+AS+EM+NS+SS-WeA3 Invited
The Role of Defects and Doping in Graphene-like Materials and Beyond, M. TERRONES, Pennsylvania State University, Shinshu University, Japan
3:00 pm
Invited talk continued.
3:20 pm
EW-WeA5
Heidelberg Instruments microPG501, A Direct Write Lithography Tool, N. WIJNAENDTS VAN RESANDT, Heidelberg Instruments
BREAK
3:40 pm
EW-WeA6
Dry Etching Enabling Surface Texturing for Thin Substrate Solar Cells, R. MOHONDRO, Plasma-Therm LLC
BREAK
4:00 pm
GR+AS+EM+NS+SS-WeA7 Metal Oxide Growth and Characterization on CVD Graphene, A. MATSUBAYASHI, College of Nanoscale Science and Engineering, University at Albany
4:20 pm
GR+AS+EM+NS+SS-WeA8
Bi-layer Graphene Growth on Ni(111): The Role of Monolayer Graphene Rotation, A. DAHAL, A. RAFIK, University of South Florida, P.W. SUTTER, Brookhaven National Laboratory, M. BATZILL, University of South Florida
4:40 pm
GR+AS+EM+NS+SS-WeA9 Energetic and Kinetic Factors of Graphene Nucleation on Cu, N. SAFRON, M.S. ARNOLD, University of Wisconsin-Madison
5:00 pm
GR+AS+EM+NS+SS-WeA10 Magnetic Spin Reorientation Transition in Graphene Covered Cobalt on Iridium(111), A.T. N'DIAYE, Lawrence Berkeley National Laboratory, J. CORAUX, N. ROUGEMAILLE, C. VO-VAN, O. FRUCHART, Institut NÉEL, CNRS & Université Joseph Fourier, France, A.K. SCHMID, Lawrence Berkeley National Laboratory
5:20 pm
GR+AS+EM+NS+SS-WeA11 Nucleation and Growth of Rh and Au Clusters on Graphene Moiré/Ru(0001), B. HABENICHT, Oak Ridge National Laboratory, D. TENG, Georgia Institute of Technology, L. SEMIDEY-FLECHA, Oak Ridge National Laboratory, D. SHOLL, Georgia Institute of Technology, Y. XU, Oak Ridge National Laboratory
5:40 pm
GR+AS+EM+NS+SS-WeA12 Graphitic and Pyridinic N Species on N-doped HOPG Studied by STM, STS, PES and DFT, M. SAKURAI, T. SHIKANO, D. USHIGOME, T. SUZUKI, University of Tsukuba, Japan, Y. HARADA, M. OSHIMA, University of Tokyo, Japan, S. CASOLO, University of Milan, Italy, M.I. TRIONI, ISTM, Italy, G.F. TANTARDINI, University of Milan, Italy, T. KONDO, J. NAKAMURA, University of Tsukuba, Japan
145
Wednesday Afternoon, October 31, 2012 Helium Ion Microscopy Focus Topic Room: 19 - Session HI+AS+NS-WeA
Late Breaking Session Room: 14 - Session LB+EM+GR+MN+TR-WeA Select Topics in Surface and Interface Science
Basics of Helium Ion Microscopy
Moderators: C.R. Eddy, Jr., U.S. Naval Research Laboratory, J.M. Fitz-Gerald, University of Virginia LB+EM+GR+MN+TR-WeA1 Degradation Kinetics of Hard Gold Tribofilms, N.
Moderator: A. Gölzhäuser, University of Bielefeld, Germany 2:00 pm
2:20 pm
HI+AS+NS-WeA1 Invited
Basics of Imaging with Ions, D. JOY, University of Tennessee
ARGIBAY, M.T. DUGGER, M.T. BRUMBACH, S.V. PRASAD, Sandia National Laboratories
Invited talk continued.
LB+EM+GR+MN+TR-WeA2 Effect of Nitrogen Concentration on the Surface Properties of Plasma Nitrided Tool Steels, P. ABRAHA, J. MIYAMOTO, Meijo University, Japan
HI+AS+NS-WeA3 Invited
LB+EM+GR+MN+TR-WeA3 High Strength Carbon Fiber Composite Wafers for Microfabrication, L. PEI, K. ZUFELT, R. VANFLEET, R.C. DAVIS, J. LUND, K. JONES, B.D. JENSEN, Brigham Young University, J. ABBOTT, M. HARKER, M. ZAPPE, S. LIDDIARD, Moxtek
3:00 pm
Invited talk continued.
LB+EM+GR+MN+TR-WeA4 Thermal Convection-based Inclinometer using Carbon Nanotube, D.W. JUNG, The University of Texas at Dallas
3:20 pm
BREAK
BREAK
3:40 pm
BREAK
BREAK
4:00 pm
HI+AS+NS-WeA7 Evaluation of W(111) Gas Field Ion Sources Based on Single Atom Tips, R. URBAN, University of Alberta and The National Institute for
LB+EM+GR+MN+TR-WeA7 Selective Graphitization using Multi-Ion Beam Lithography, J. FRIDMANN, Raith USA Inc., S. TONGAY, University of California, Berkeley, M. LEMAITRE, A.F. HEBARD, B. GILA, University of Florida, A. NADZEYKA, Raith GmbH, Germany, F. REN, X. WANG, University of Florida, D.K. VENKATACHALAM, R.G. ELLIMAN, Australian National University, Australia, B.R. APPLETON, University of Florida
2:40 pm
Surface Analysis using Channeling Contrast in NUHV Helium Ion Microscopy, B. POELSEMA, University of Twente, Netherlands
Nanotechnology, Canada, J.L. PITTERS, National Institute for Nanotechnology, NRC Canada, R.A. WOLKOW, University of Alberta and The National Institute for Nanotechnology, Canada 4:20 pm
4:40 pm
5:00 pm
HI+AS+NS-WeA8 Single-atom Tip as an Emitter of Gas Field Ion Sources, I.-S. HWANG, H.-S. KUO, Academia Sinica, Taiwan, Republic of China, T.-Y. FU, National Taiwan Normal University, Taiwan, Republic of China, J.-L. HOU, C.-Y. LIN, Y.-H. LU, W.-T. CHANG, T.T. TSONG, Academia Sinica, Taiwan, Republic of China
LB+EM+GR+MN+TR-WeA8
HI+AS+NS-WeA9 Helium Ions for Imaging and Nanofabrication on the nm Scale, E. VAN VELDHOVEN, H.H.P.TH. BEKMAN, F.T. MOLKENBOER, N.B. KOSTER,
LB+EM+GR+MN+TR-WeA9
D.J. MAAS, TNO Technical Sciences, The Netherlands
Sincrotrone Trieste, Italy, R. LARCIPRETE, CNR , Institute of Complex Systems, Italy, P. LACOVIG, ELETTRA Sincrotrone Trieste, Italy, K. KOSTOV, Bulgarian Academy of Sciences, Bulgaria, D. MENZEL, Technische Universität München and Fritz Haber Institute, Germany LB+EM+GR+MN+TR-WeA10 Fano Interference Effects in Hydrogen Intercalated Graphene, A. BOOSALIS, T. HOFMANN, University of Nebraska-Lincoln, R. ELMQUIST, M. REAL, National Institute of Standards and Technology (NIST), M. SCHUBERT, University of Nebraska-Lincoln
HU, Y.C. CHAO, National Taiwan University, Taiwan, Republic of China, Y.R. TZENG, Institute of Nuclear Energy Research of Taiwan, Republic of China, L.J. LI, Academia Sinica, Taiwan, Republic of China, K.C. LIN, Catholic Fu Jen University, Taiwan, Republic of China
Ultrafast Charge Transfer at Monolayer Graphene Surfaces with Varied Substrate Coupling, S. LIZZIT, ELETTRA
Towards Secondary Ion Mass Spectrometry on the Helium Ion Microscope, T. WIRTZ, N. VANHOVE, L. PILLATSCH, D. DOWSETT,
HI+AS+NS-WeA10
Centre de Recherche Public – Gabriel Lippmann, Luxembourg, S. SIJBRANDIJ, J. NOTTE, Carl Zeiss
5:20 pm
Unrippling and Imaging of Extra-Large FreeStanding Graphene with Atomic Precision, W.W. PAI, R. BREITWEISER, Y.C.
LB+EM+GR+MN+TR-WeA11 In Situ Dry-Cleaning of Ge(100) Surface using H2O2, K. KIANTAJ, T. KAUFMAN OSBORN, T.J. KENT, A.C. KUMMEL, University of California San Diego
5:40 pm
LB+EM+GR+MN+TR-WeA12 Hf-based High-k Dielectrics for Ge MOS Stacks, S. FADIDA, M. EIZENBERG, Technion Israel Institue of Technology, Israel, L. NYNS, D. LIN, S. VAN ELSHOCHT, M. CAYMAX, IMEC, Belgium
146
Wednesday Afternoon, October 31, 2012 Magnetic Interfaces and Nanostructures Room: 6 - Session MI+OX-WeA
Nanometer-scale Science and Technology Room: 12 - Session NS-WeA
Spintronics, Magnetoelectrics, Multiferroics
Nanophotonics and Plasmonics
MI+OX-WeA1 Imaging of Temperature-Driven Nucleation of Ferromagnetic Domains in FeRh Thin Films, C. BALDASSERONI, C. BORDEL, Univ. of California
NS-WeA1 Plasmon Induced Current In Hybrid Nanostructures, D.A. BONNELL, D. CONKLIN, S. NANAYAKKARA, X. CHEN, The University of Pennsylvania, T.H. PARK, University of Michigan, M. THERIEN, Duke University
Moderator: G.J. Mankey, University of Alabama 2:00 pm
2:20 pm
2:40 pm
Moderator: D. Wei, University of Florida
Berkeley, A.X. GRAY, SLAC National Accelerator Lab, A.M. KAISER, Peter-GrünbergInstitut, Germany, F. KRONAST, Helmholtz-Zentrum Berlin für Materialien und Energie, Germany, J. HERRERO-ALBILLOS, Centro Univ. de la Defensa, Spain, C.M. SCHNEIDER, Peter-Grünberg-Institut, Germany, C.S. FADLEY, Lawrence Berkeley National Lab, F. HELLMAN, Univ. of California Berkeley MI+OX-WeA2 Magnetic Properties of Cobalt and Permalloy Thin Films Grown on Self-Assembled Monolayers by Physical Vapor Deposition, G.J. SZULCZEWSKI, S. SCHAFER, B. KHODADADI, T. MEWES, J. KREIL, E. ELLINGSWORTH, K. ANDERSON, The University of Alabama
MI+OX-WeA3 Invited
NS-WeA2 Absorption from Plasmonic Antenna Arrays, K.E. O'BRIEN, P. WANG, P.H. HOLLOWAY, M.R. DAVIDSON, University of Florida
NS-WeA3 Invited
Synthesis and Fundamental Properties of Fe16N2 Films - New Excitements of Fe16N2 Research and a 40-year Mystery, J.-P. WANG,
New Directions in Plasmonics: Pushing the Sensitivity, Space, and Time Limits, R.P. VAN DUYNE, Northwestern University
University of Minnesota
3:00 pm
Invited talk continued.
Invited talk continued.
3:20 pm
BREAK
BREAK
3:40 pm
BREAK
BREAK
MI+OX-WeA7 Invited
NS-WeA7 Invited
4:00 pm
Spin Transfer Torque MRAM - Modeling, Experiments and Future Prospects, D. APALKOV, A. KHVALKOVSKIY, V. NIKITIN, S. WATTS, A. DRISKILLSMITH, D. LOTTIS, R. CHEPULSKYY, V. VOZNYUK, X. TANG, K. MOON, E. CHEN, C.M. PARK, M. KROUNBI, Grandis, Inc.
Near-Field Spatio-Temporal Control of Optical Fields for Spectroscopic Nano-imaging: Ultrafast Spectroscopy Reaching the Single Molecule Limit, M.B. RASCHKE, University of Colorado
4:20 pm
Invited talk continued.
Invited talk continued.
4:40 pm
MI+OX-WeA9 Epitaxial Growth of Multiferroic Heterostructures of Magnetic NS-WeA9 Tuning the Optical Properties of Arrays of Pure and Doped Au and Ferroelectric Oxides using the Dual-laser Ablation Technique, D. Nano Chains, N. NAYYAR, V. TURKOWSKI, T.S. RAHMAN, University of Central Florida MUKHERJEE, M. HORDAGODA, R.H. HYDE, N. BINGHAM, H. SRIKANTH, P. MUKHERJEE, S. WITANACHCHI, University of South Florida
5:00 pm
5:20 pm
MI+OX-WeA10 The Highly Polarized Surface of Magnetoelectric NS-WeA10 Synthesis, Characterization and Plasmonic Properties of Antiferromagnet, N. WU, X. HE, J. SANTANA, J. WANG, University of Nebraska-Lincoln, Horizontally and Vertically Aligned Ag Nanorods and Nanowires, S. E. VESCOVO, Brookhaven National Laboratory, C. BINEK, P.A. DOWBEN, University of Nebraska-Lincoln
VILAYURGANAPATHY, A. PANDEY, A. DEVARAJ, D.E. PEREA, S. THEVUTHASAN, EMSL, Pacific Northwest National Laboratory, A. KAYANI, Western Michigan University
MI+OX-WeA11 Sub-monolayer Spin Rotation of Photoelectrons from FePc on Fe(110), J.E. ROWE, D.B. DOUGHERTY, A.A. SANDIN, North Carolina State
NS-WeA11 Localized Surface Plasmon Resonances in Silicon, L.-W. CHOU, N. SHIN, S. SIVARAM, M. FILLER, Georgia Institute of Technology
University, E. VESCOVO, Brookhaven National Laboratory
5:40 pm
MI+OX-WeA12 Magnetic Configurations of Ni80Fe20/Ir Superlattices, G.J. MANKEY, University of Alabama, J. HWANG, Lane College, N. PACHAURI, E.A. MANOHARAN, P.R. LECLAIR, University of Alabama, H. AMBAYE, V. LAUTER, Oak Ridge National Laboratory
147
Wednesday Afternoon, October 31, 2012 Plasma Science and Technology Room: 24 - Session PS1-WeA
Plasma Science and Technology Room: 25 - Session PS2-WeA
Plasma Diagnostics, Sensors and Control 2
Plasma Surface Interactions during PECVD and Plasma Surface Modification
Moderator: R. Ramos, LTM, France 2:00 pm
ECR Plasma Etching Characterization using a Retarding Field Energy Analyzer, B. DOLINAJ, Dublin City University, Ireland, V. MILOSAVLJEVIC,
PS1-WeA1
Dublin City University, D. GAHAN, Impedans Ltd., N. MACGEARAILT, Intel Corporation, M.B. HOPKINS, Impedans Ltd., S. DANIELS, Dublin City University
Moderator: C.A. Wolden, Colorado School of Mines PS2-WeA1 Invited
Surface Modifications Induced by Extreme Fluxes of Low-Energy Ions, G. DE TEMMERMAN, K. BYSTROV, FOM Institute DIFFER, Netherlands, M.J. BALDWIN, R.P. DOERNER, University of California San Diego, L. MAROT, University of Basel, Switzerland, H.Y. XU, Tsinghua University, China, M.C.M. VAN DE SANDEN, FOM Institute DIFFER, Netherlands Invited talk continued.
2:20 pm
PS1-WeA2 Time Resolved Ion Flux Measurement in Pulsed ICP Plasmas, G. CUNGE, M. DARNON, LTM-CNRS, France, N.ST. BRAITHWAITE, The Open University, UK, E. DESPIAU-PUJO, P. BODART, M. BRIHOUM, M. HAASS, O. JOUBERT, LTM-CNRS, France
2:40 pm
PS1-WeA3 In Situ Monitoring of Electron Density and Dielectric Layer on the Wall with Curling Probe, A. PANDEY, Y. LIANG, S. IKEZAWA, K. NAKAMURA,
PS2-WeA3
H. SUGAI, Chubu University, Japan
Institute of Electron Technology, Poland, M. SEKINE, M. HORI, K. ISHIKAWA, H. KONDO, T. TAKEUCHI, T. SUZUKI, Nagoya University, Japan, A. JAKUBOWSKI, L. LUKASIAK, Warsaw University of Technology, Poland, D. TOMASZEWSKI, Institute of Electron Technology, Poland PS2-WeA4 Kinetic Theory of the Sheath near Electron Emitting Surfaces, J.P. SHEEHAN, University of Wisconsin Madison, I.D. KAGANOVICH, Princeton Plasma Physics Laboratory, N. HERSHKOWITZ, University of Wisconsin Madison, Y. RAITSES, Princeton Plasma Physics Laboratory
3:00 pm
Spatial and Time Resolved Optical Emission Spectroscopy of an ECR Plasma Etcher, V. MILOSAVLJEVIC, N. MACGEARAILT, S. DANIELS,
PS1-WeA4
Dublin City University, Ireland
Investigation of Plasma-Surface Interactions Between Hydrogen Radical and Chemically Amplified Photoresist, A. MALINOWSKI,
3:20 pm
BREAK
BREAK
3:40 pm
BREAK
BREAK
PS1-WeA7 Invited
PS2-WeA7
4:00 pm
Probing CF and CF2 Surface Reactivities in InductivelyCoupled Fluorocarbon Plasmas, M.F. CUDDY*, E.R. FISHER, Colorado State
Time Resolved Laser Induced Fluorescence for Probing the Excitation Kinetics of a Low Temperature Argon Discharge, J.M. PALOMARES
University
LINARES, E.A.D. CARBONE, S. HÜBNER, W.A.A.D. GRAEF, J.J.A.M. VAN DER MULLEN, Eindhoven University of Technology, the Netherlands 4:20 pm
Effects of Ar Ion Bombardment on Protection of Organosilicate Glass from O2 Plasma Damage, H.UR. KAZI, S. GADDAM, J.A. KELBER,
Invited talk continued.
PS2-WeA8
University of North Texas
4:40 pm
5:00 pm
5:20 pm
PS1-WeA9 Analysis of Run-to-Run Variability in the Bosch Process using rf Probe and Emission Spectroscopy Measurements, M. FRADET, L.
PS2-WeA9
Ion-Surface Interaction during Microcrystalline Silicon Thin Film Growth, J. PALMANS, A.C. BRONNEBERG, X. KANG, M.C.M. VAN DE SANDEN,
STAFFORD, Université de Montréal, Canada, C. COÏA, Teledyne Dalsa, Canada
W.M.M. KESSELS, M. CREATORE, Eindhoven University of Technology, the Netherlands
PS1-WeA10 Spatially-resolved Optical Emissions Spectroscopy of Capacitively Coupled Discharges, G. FRANZ, I. KRSTEV, F. SCHAMBERGER,
PS2-WeA10
Hochschule München, Germany
of Nantes - CNRS, France
PS1-WeA11 Model-based Ion Energy Control in ICP Etcher, M. KLICK, Plasmetrex, Germany, H.P. MAUCHER, United Monolithic Semiconductors
PS2-WeA11 Plasma-Surface Interactions, Erosion, and Impact on Plasma Distribution Functions, N. FOX-LYON, University of Maryland, College Park, D.B.
Time Resolved Characterization of Pulsed ICP CH4 – H2 Based Plasmas, S. JACQ, L. LE BRIZOUAL, C. CARDINAUD, A. GRANIER, University
GRAVES, University of California Berkeley, S.Y. MOON, V.M. DONNELLY, D.J. ECONOMOU, University of Houston, G.S. OEHRLEIN, University of Maryland, College Park
5:40 pm
PS1-WeA12 High Energy IED Measurements with MEMs based Si Grid Technology Inside a 300mm Si Wafer, M. FUNK, B.G. LANE, L. CHEN, J. ZHAO,
PS2-WeA12 MD Simulations of Hydrogen Plasma Interaction with Graphene Surfaces, E. DESPIAU-PUJO, A. DAVYDOVA, G. CUNGE, CNRS/UJF-
R. SUNDARARAJAN, Tokyo Electron America, Y. YAMAZAWA, Tokyo Electron Limited, Japan
Grenoble1/CEA LTM, France, L. MAGAUD, CNRS/UJF Institut Neel, France, D.B. GRAVES, University of California Berkeley
148 * Coburn & Winters Student Award Finalist
Wednesday Afternoon, October 31, 2012 Scanning Probe Microscopy Focus Topic Room: 16 - Session SP+AS+BI+ET+MI+TF-WeA
Surface Science Room: 22 - Session SS+EM-WeA
Emerging Instrument Formats
Semiconductor Surfaces
SP+AS+BI+ET+MI+TF-WeA1 Invited
SS+EM-WeA1 Local Characterization of Laterally Patterned GaN Polar Surfaces, J.D. FERGUSON, Virginia Commonwealth University, J.K. HITE, M.A.
Moderator: A. Belu, Medtronic, Inc. 2:00 pm
2:20 pm
Moderator: M.A. Hines, Cornell University
Electrochemical Strain Microscopy: Nanoscale Imaging of Solid State Ionics, S. JESSE, Oak Ridge National Laboratory
MASTRO, C.R. EDDY, JR., U.S. Naval Research Laboratory, A.A. BASKI, Virginia Commonwealth University SS+EM-WeA2 Systematic Prediction of Entropic Surface Reconstruction Stabilization on GaAs(001) from First Principles, J.C. THOMAS, A. VAN DER
Invited talk continued.
VEN, University of Michigan, N.A. MODINE, Sandia National Laboratories, J.M. MILLUNCHICK, University of Michigan
2:40 pm
3:00 pm
SP+AS+BI+ET+MI+TF-WeA3 Probing Electrochemical Phenomena in Reactive Environments at High Temperature: In Situ Characterization of Interfaces in Fuel Cells, S.S. NONNENMANN, R. KUNGAS, J.M. VOHS, D.A.
SS+EM-WeA3 Invited
BONNELL, University of Pennsylvania
Eindhoven University of Technology, Netherlands
SP+AS+BI+ET+MI+TF-WeA4 High-Resolution Scanning Local Capacitance Measurements, M. BRUKMAN, University of Pennsylvania, S. NANAYAKKARA,
Invited talk continued.
3D Atomic Scale Structure Analysis of Semiconductor Nanostructures by Atom Probe Tomography and Cross-Sectional STM, P.M. KOENRAAD,
National Renewable Energy Laboratory, D.A. BONNELL, University of Pennsylvania
3:20 pm
BREAK
BREAK
3:40 pm
BREAK
BREAK
4:00 pm
SP+AS+BI+ET+MI+TF-WeA7 Experimental Calibration of the Higher Flexural Modes of Microcantilever Sensors, J.D. PARKIN, G. HÄHNER, University of St
SS+EM-WeA7 Electrostatic Interaction Mechanism for Near-surface Defect Redistribution, P. GORAI, E.G. SEEBAUER, University of Illinois at Urbana Champaign
Andrews, UK
4:20 pm
SP+AS+BI+ET+MI+TF-WeA8 Atomic Imaging with Peak Force Tapping, B. PITTENGER, Y. HU, C. SU, S.C. MINNE, Bruker AFM
SS+EM-WeA8 Coverage-dependent Adsorption of a Bifunctional Molecule with a Rigid Spacer on the Ge(100)-2 × 1 Surface, B. SHONG, S.F. BENT, Stanford University
4:40 pm
SP+AS+BI+ET+MI+TF-WeA9 Invited
SS+EM-WeA9 Invited
Nanoscale Chemical Composition Mapping with AFM-based Infrared Spectroscopy, C.B. PRATER, M. LO, Q. HU, Anasys Instruments, C. MARCOTT, Light
2012 AVS Medard Welch Award Lecture: Chemical Functionalization of H-terminated Silicon Surfaces, Y.J. CHABAL*, The University of Texas at Dallas
Light Solutions, B. CHASE, University of Delaware, R. SHETTY, K. KJOLLER, Anasys Instruments 5:00 pm
Invited talk continued.
Invited talk continued.
5:20 pm
SP+AS+BI+ET+MI+TF-WeA11 Quantifying Nanomechanical Properties with Simultaneous AM-FM and tanδ Imaging, T. MEHR, A. MOSHAR, R. PROKSCH,
SS+EM-WeA11 Wet Chemical Approach for Amino Functionalization of Oxide-free Si(111) Surfaces, T. PEIXOTO, P. THISSEN, Y.J. CHABAL, University of
I. REVENKO, N. GEISSE, S. HOHLBAUCH, D. WALTERS, J. CLEVELAND, J. BEMIS, C. CALLAHAN, D. BECK, Asylum Research
Texas at Dallas
SP+AS+BI+ET+MI+TF-WeA12 Simultaneous Scanning Tunneling and Atomic Force Microscopy with Subatomic Spatial Resolution, FJ. GIESSIBL,
SS+EM-WeA12
5:40 pm
Ammonia- and Amine-based Chemical Modification of Silicon Surfaces, A.V. TEPLYAKOV, University of Delaware
University of Regensburg, Germany
149 * Medard W. Welch Award Winner
Wednesday Afternoon, October 31, 2012 Surface Science Room: 21 - Session SS-WeA
Transparent Conductors and Printable Electronics Focus Topic Room: 7 - Session TC+EM+AS-WeA
Catalysis on Metals and Alloys
Printable and Flexible Electronics
Moderator: G. Fisher, University of Michigan 2:00 pm
2:20 pm
SS-WeA1 A Novel MoSx Structure with High Affinity to Adsorbate Binding, D.Z. SUN, W.H. LU, University of California Riverside, D. LE, University of Central Florida, Q. MA, University of California Riverside, M. AMANPOUR, University of Central Florida, S. BOBEK, J. MANN, University of California Riverside, T. RAMAN, University of Central Florida, L. BARTELS, University of California Riverside SS-WeA2 Atomic-Scale Determination of the Crystallographic Stacking at the Technologically-Important Cobalt-Copper Interface, E.A. LEWIS, C.H.
Moderator: G.S. Herman, Oregon State University TC+EM+AS-WeA1 Invited
Metal Oxides and Organic Materials for Printed Electronics, A. FACCHETTI, Polyera Corp. and Northwestern U.
Invited talk continued.
SYKES, Tufts University
2:40 pm
Ion Dependence of Gate Dielectric Behavior of BetaAluminas in Transparent Oxide Field-Effect Transistors, Y. LIU, B. ZHANG,
SS-WeA3 Invited
TC+EM+AS-WeA3
Understanding the Growth and Surface Activity of Oxide-supported Bimetallic Clusters, R.P. GALHENAGE, H. YAN, A. DUKE, K. XIE, D.A. CHEN,
H.E. KATZ, Johns Hopkins University
University of South Carolina
3:00 pm
TC+EM+AS-WeA4 Selection Rule of Preferred Doping Site for N-Type Transparent Conducting Oxides, S.-H. WEI, National Renewable Energy Laboatory,
Invited talk continued.
C. LI, J.B. LI, Institute of Semiconductor Physics, CAS, China
3:20 pm
BREAK
BREAK
3:40 pm
BREAK
BREAK
SS-WeA7 Invited
TC+EM+AS-WeA7 Invited
S.R. BARE, UOP LLC, a Honeywell Company
KIM, Y. OH, I. LEE, M.F. ISLAM, Carnegie Mellon University
4:20 pm
Invited talk continued.
Invited talk continued.
4:40 pm
SS-WeA9 Glycolaldehyde as a Probe Molecule for Biomass-derivatives, W. YU, M. BARTEAU, J. CHEN, University of Delaware
TC+EM+AS-WeA9
4:00 pm
Synchrotrons, Catalysts and UOP: from Imaging to In Situ Spectroscopy, Single-Walled Carbon Nanotube Aerogel Based Elastic Conductors, K.H.
Networked Metal Nanowire-Polymer Composites for Flexible, Transparent and Conducting Devices, S. NARAYANAN, S. FU, M.R. BOCKSTALLER, L.M. PORTER, Carnegie Mellon University
5:00 pm
Modifying Selectivity of Hydrocarbon Conversion Reactions by Alloying Sn and Pt: Benzene Formation from Acetylene, X. YANG, Princeton
SS-WeA10
TC+EM+AS-WeA10 Invited Printing Photovoltaics, F.A.M. VAN HEST, National Renewable Energy Laboratory
University, J. GAO, S. PODKOLZIN, Stevens Institute of Technology, B. KOEL, Princeton University
5:20 pm
SS-WeA11 Composition Spread Alloy Films for Study of Alloy Catalysis Across Composition Space, A.J. GELLMAN, B. FLEUTOT, P. KONDRATYUK, J.B.
Invited talk continued.
MILLER, G. GUMUSLU, Carnegie Mellon University
5:40 pm
SS-WeA12 Role of Dissociated Hydrogen in Stabilizing Catalytic Sites and Regulating Surface Reactions for Hydrogen Storage in Metal Hydrides, I. CHOPRA, University of Texas at Dallas, S. CHAUDHURI, Washington State University, J.-F. VEYAN, Y.J. CHABAL, University of Texas at Dallas
150
Wednesday Afternoon, October 31, 2012 Thin Film Room: 11 - Session TF+AS-WeA
Thin Film Room: 10 - Session TF+MI-WeA
Thin Films: Growth and Characterization-I
Thin Films for Memory and Data Storage
TF+AS-WeA1 Studying the Microstructure of Cu2ZnSn(S,Se)4 Thin Film Solar Cells, L. ZHANG, Y. CAO, D.H. ROSENFELD, M. LU, J. CASPAR, C. CHAN,
TF+MI-WeA1 Invited
DuPont Central Research and Development
VICTORA, S.H. HERNANDEZ, T. QU, University of Minnesota
2:20 pm
TF+AS-WeA2 Seed-Mediated Growth of 1D Pyrite (FeS2) Structures, Y.J. KWON, N. BERRY, M. LAW, J.C. HEMMINGER, University of California Irvine
Invited talk continued.
2:40 pm
TF+AS-WeA3 Invited TF+MI-WeA3 Ta Seeded Ultrathin Free Layer for Fully Perpendicular Investigation of Recrystallization in Low-Temperature Grown CdTe Solar Magnetic Tunnel Junctions, A. SINGH, A. NATARAJARATHINAM, B.D. CLARK, S. Cells in Substrate and Superstrate Configuration, L. KRANZ, C. GRETENER, J. GUPTA, The University of Alabama
Moderator: M.R. Davidson, University of Florida 2:00 pm
Moderator: S. Gupta, The University of Alabama Spin Transport Properties and Applications in Magnetic Multilayers, R.H.
PERRENOUD, S. BUECHELER, A.N. TIWARI, EMPA, Switzerland
3:00 pm
TF+MI-WeA4 Epitaxial Fe38.5Pd61.5 Films Grown by Pulsed Laser Deposition: Structure and Properties, M.A. STEINER, R.B. COMES, J.A. FLORO,
Invited talk continued.
W.A. SOFFA, J.M. FITZ-GERALD, University of Virginia
3:20 pm
BREAK
BREAK
3:40 pm
BREAK
BREAK
4:00 pm
TF+AS-WeA7 High Quality ZnMgO Thin Films Grown on Sapphire and ZnO Substrates by Molecular Beam Epitaxy, M. WEI, R.C. BOUTWELL, W.V.
TF+MI-WeA7 Oxygen Reservoir Effect and its Impact on HfO2, C. VALLEE, C. MANNEQUIN, P. GONON, L. LATU-ROMAIN, LTM (CNRS / UJF-Grenoble1 / CEA), France, A. SALAÜN, H. GRAMPEIX, V. JOUSSEAUME, CEA, LETI, MINATEC Campus, France
SCHOENFELD, University of Central Florida
4:20 pm
TF+AS-WeA8 Epitaxial Growth of Zirconium Diboride Thin Film on Ge(111) Wafer, C. HUBAULT, A. BABA, A. FLEURENCE, Y. YAMADA-TAKAMURA, Japan Advanced Institute of Science and Technology
4:40 pm
TF+AS-WeA9 Effect of Growth Conditions on Cubic ZnMgO films, C. BOUTWELL, M. WEI, W.V. SCHOENFELD, University of Central Florida
5:00 pm
TF+AS-WeA10 Properties of Ytterium Doped Zinc Oxide Thin Films Deposited by r.f. Magnetron Sputtering, K. VANSANT, T. BARNES, J. BURST, J. DUENOW, T.A. GESSERT, National Renewable Energy Laboratory
5:20 pm
TF+AS-WeA11 Effect of Process Parameters on Molybdenum Thin Films and Development of Single Layer Molybdenum Film for CIGS Thin Film Solar Cells, S. PETHE, A. KAUL, N. DHERE, Florida Solar Energy Center, University of Central Florida
5:40 pm
Etching Mechanism of IGZO Thin Films in CF4/Ar Plasma with the Addition of Inert Gases, Y.H. JOO, J.C. WOO, Y.S. CHUN, H.J. KIM, C.I.
TF+AS-WeA12
KIM, Chung-Ang University, Republic of Korea
151
Anticipated Schedule Wednesday Morning, October 31, 2012 TIME
SESSION
ROOM
8:00 am
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8:20 am
______________________________________________________________________________________________________________________________________________
8:40 am
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9:00 am
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9:20 am
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9:40 am
______________________________________________________________________________________________________________________________________________
10:00 am
______________________________________________________________________________________________________________________________________________
10:20 am
______________________________________________________________________________________________________________________________________________
10:40 am
______________________________________________________________________________________________________________________________________________
11:00 am
______________________________________________________________________________________________________________________________________________
11:20 am
______________________________________________________________________________________________________________________________________________
11:40 am
______________________________________________________________________________________________________________________________________________
12:00 pm
______________________________________________________________________________________________________________________________________________
Lunch when
______________________________________________________________________________________________________________________________________________
with
______________________________________________________________________________________________________________________________________________
where
______________________________________________________________________________________________________________________________________________
Anticipated Schedule Wednesday Afternoon, October 31, 2012 TIME
SESSION
ROOM
1:00 pm
______________________________________________________________________________________________________________________________________________
1:20 pm
______________________________________________________________________________________________________________________________________________
1:40 pm
______________________________________________________________________________________________________________________________________________
2:00 pm
______________________________________________________________________________________________________________________________________________
2:20 pm
______________________________________________________________________________________________________________________________________________
2:40 pm
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3:00 pm
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3:20 pm
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3:40 pm
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4:00 pm
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4:20 pm
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4:40 pm
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5:00 pm
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152
THURSDAY SPECIAL EVENTS 7:00 a.m. 7:00 a.m. 8:00 a.m. 8:00 a.m. 8:40 a.m. 10:00 a.m. 12:00 p.m. 12:00 p.m. 12:00 p.m. 12:15 p.m. 12:15 p.m. 6:00 p.m. 6:30 p.m. 7:00 p.m.
Companion Tour Registration—Main Lobby (H) Professional Leadership Committee Meeting and Breakfast—Café Waterside Restaurant (H) Advanced Surface Engineering Division Business Meeting—Meeting Room 1 (H) Advanced Surface Engineering Division Executive Committee Meeting (Lunch Offsite)—Meeting Room 1 (H) Peter Mark Award Lecture, C.H. Sykes, Tufts University—22 (CC) Session Coffee Break—West Exhibit Hall (CC) Exhibit Finale and Refreshments—West Exhibit Hall (CC) Surface Science Division Mort Traum Awards Ceremony—22 (CC) Plasma Science and Technology Division Coburn and Winters Award Ceremony—24 (CC) 2013 AVS Program Committee Chairs’ Lunch—Meeting Room 4 (H) AVS Business Meeting—25 (CC) Poster Session and Refreshments—Central Exhibit Hall (CC) 2012/2013 Program Committee Reception and Dinner—Meeting Room 4 (H) Surface Science Spectra Editorial Board Dinner—Meeting Room 3 (H)
10:00 a.m.-2:00 p.m. Equipment Exhibition................................................................................................. West Exhibit Hall (CC) 12:00 p.m.-1:00 p.m. Exhibitors & Manufacturers Technology Spotlight.................................................... West Exhibit Hall (CC)
CC = Tampa Convention Center H = Tampa MarriotWaterside Hotel & Marina
THURSDAY SHORT COURSES 8:30 a.m. 8:30 a.m. 8:30 a.m.
Fundamentals of Vacuum Technology Surface Characterization of Biomaterials Atomic Layer Deposition
LOCATION: COURSE HOURS:
All AVS Short Courses will be held at – Tampa Convention Center All AVS Short Course Hours: 8:30 a.m. – 5:00 p.m. – with 1.5 hour break for Lunch (lunch not included)
153
NOTES
154
Thursday Morning, November 1, 2012 Applied Surface Science Room: 20 - Session AS-ThM Applications of Large Cluster Ion Beams
8:00 am
8:20 am
Electronic Materials and Processing Room: 14 - Session EM+SS+AS+NS-ThM
Moderators: A.V. Walker, University of Texas at Dallas, C.M. Mahoney, Pacific Northwest National Laboratory, M.L. Pacholski, The Dow Chemical Company AS-ThM1 Comparison of Primary Ion Beams for XPS Sputter Depth Profiling of Organic Samples, S.J. HUTTON, C.J. BLOMFIELD, S.J. PAGE, W.
Nanoelectronic Interfaces, Materials, and Devices Moderator: M. Filler, Georgia Institute of Technology EM+SS+AS+NS-ThM1 Invited
BOXFORD, Kratos Analytical Ltd., UK
Tensilely Strained Ge Nanomembranes for Applications in Group-IV Infrared Photonics, R. PAIELLA, Boston University
AS-ThM2 Invited
Invited talk continued.
Molecular SIMS - Revolutionized by Cluster Primary Ion Beams?, J.C. VICKERMAN, The University of Manchester, UK
8:40 am
Self-activating and Self-limiting Features of the Thermally Assisted Growth Mechanisms of Thin Oxide-, Nitride- and Carbide Films on Si Surfaces at Low Gas or Plasma Pressures, P.
Invited talk continued.
EM+SS+AS+NS-ThM3
MORGEN, J. DREWS, R. DHIMAN, University of Southern Denmark, Z.S. LI, Aarhus University, Denmark 9:00 am
9:20 am
9:40 am
AS-ThM4 New Organic Reference Materials for Cluster Ion Sputter Depth Profiling, A.G. SHARD, S. SPENCER, S. SMITH, I.S. GILMORE, R. HAVELUND, National
EM+SS+AS+NS-ThM4
Functional Conductive Polymer to Inexpensive and Portable Chemiresistive Biosensor, D. BHATTACHARYYA, K.K. GLEASON,
Physical Laboratory, UK
Massachusetts Institute of Technology
AS-ThM5 Characterization of Nano-objects with NanoprojectileSecondary Ion Mass Spectrometry, C.-K. LIANG, J.D. DEBORD, M. ELLER, S.
EM+SS+AS+NS-ThM5 Invited
VERKHOTUROV, E. SCHWEIKERT, Texas A&M University
ROGERS, University of Illinois at Urbana Champaign
AS-ThM6 Organic Solar Cell Composition Profiling by Large Clusters Ions: How can we Optimize the Information Retrieved?, T. CONARD, A.
Invited talk continued.
Semiconductor Nanomembranes for Biomedical Applications, J.A.
FRANQUET, E. VOROSHAZI, D. CHEYNS, P. FAVIA, W. VANDERVORST, IMEC, Belgium
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
AS-ThM9 Molecular Imaging of Cells and Tissues with Ar Cluster Ion Beams, J. MATSUO, S. NAKAGAWA, M. PY, T. AOKI, T. SEKI, Kyoto University, Japan
EM+SS+AS+NS-ThM9
11:00 am
AS-ThM10 Observation of High Ionization Probability for Desorption/Ionization Induced by Neutral Cluster Impact and its Application in Bioanalytics, B.-J. LEE, M. BAUR, University of Applied Sciences
EM+SS+AS+NS-ThM10 Semiconductor Nanostructures for Efficient Thermoelectric Energy Conversion, Z. AKSAMIJA, University of Wisconsin
Structure, Dynamics and Mechanism of a SingleMolecule Electric Motor, C.J. MURPHY, C.H. SYKES, Tufts University
Madison
Esslingen, Germany, C.R. GEBHARDT, Bruker Daltonik GmbH, Germany, M. DÜRR, University of Applied Sciences Esslingen, Germany 11:20 am
11:40 am
12:00 pm
AS-ThM11 Analysis of Molecular Surfaces Using a Pulsed Beam of Large Argon Clusters, N. HAVERCROFT, ION-TOF USA, Inc., D. RADING, S. KAYSER, R.
EM+SS+AS+NS-ThM11 UV Ozone Irradiation Induced Defect Formation in Graphene/PZT Devices, C.X. ZHANG, D.M. FLEETWOOD, M.L. ALLES, R.D.
MOELLERS, F. KOLLMER, E. NIEHUIS, ION-TOF GmbH, Germany
SCHRIMPF, Vanderbilt University, E.B. SONG, S. KIM, K. GALATSIS, K.L. WANG, University of California at Los Angeles, E.X. ZHANG, Vanderbilt University
AS-ThM12 Electrospray Droplet Impact/SIMS: Some Insights into the Collisional Events, K. HIRAOKA, Y. SAKAI, S. NINOMIYA, R. TAKAISHI, University of
EM+SS+AS+NS-ThM12 Switching Molecular Kondo Effect by Chemical Reactions, H. KIM, ISSP, University of Tokyo, Japan, Y.H. CHANG, KAIST, Korea, M.H.
Yamanashi, Japan
CHANG, Korea University, Y.-H. KIM, KAIST, Korea, S.-J. KAHNG, Korea University
EM+SS+AS+NS-ThM13 Quantifying the Local Seebeck Coefficient using Scanning Thermoelectric Microscopy (SThEM), J.C. WALRATH, Y.H. LIN, K.P. PIPE, R.S. GOLDMAN, University of Michigan
155
Thursday Morning, November 1, 2012 Electronic Materials and Processing Room: 9 - Session EM-ThM Processing for Ultra Low Power Electronics + Semiconductor Heterostructures I
Energy Frontiers Focus Topic Room: 15 - Session EN+NS-ThM Batteries and Fuel Cells
Moderators: S.A. Vitale, MIT Lincoln Laboratory, J.E. Ayers, University of Connecticut 8:00 am
Moderator: Y. Wu, Purdue University
EM-ThM1 Invited
EN+NS-ThM1 Invited
MATSUKAWA, Y. LIU, K. ENDO, S. O'UCHI, National Institute of AIST, Japan
HERRING, Colorado School of Mines
8:20 am
Invited talk continued.
Invited talk continued.
8:40 am
EM-ThM3 PiezoMEMS Enabled, Ultra Low Power Mechanical Logic, R. PROIE, R. POLCAWICH, J. PULSKAMP, T. IVANOV, US Army Research Laboratory
EN+NS-ThM3
Advanced FinFET Process for 22nm and Beyond, M. MASAHARA, T.
Advanced Polymer Electrolyte Materials for Fuel Cell Applications, A.M.
Rational Design of Competitive Electrocatalysts for Hydrogen Fuel Cells, S. STOLBOV, M. ALCANTARA ORTIGOZA, University of Central Florida
9:00 am
9:20 am
EM-ThM4
Wideband Characterization for Optimized Performance in Low Voltage Low Power Applications, M. EMAM, Incize, Belgium, J.-P. RASKIN,
EN+NS-ThM4 Invited
Université Catholique de Louvain, Belgium
Institute of Technology
Ultra Low-Power (ULP) Current Logic Gates for SubthresholdTriode Operation, K. LAM, Chinese University of Hong Kong, Hong Kong Special
Invited talk continued.
EM-ThM5
Nanocomposite Materials for Lithium Ion Batteries, G. YUSHIN, Georgia
Administrative Region of China, T. MAK, Newcastle University, UK
9:40 am
Impact of Threading Dislocation Density and Dielectric Layer on EN+NS-ThM6 Engineering LixAlySizO Ionic Conductive Thin Films by I-V Characteristics of Schottky Diodes Fabricated from Ti and Epitaxially Atomic Layer Deposition for Lithium-ion Battery Applications, Y.-C. PERNG, J. CHO, D. MEMBRENO, N. CIRIGLIANO, B. DUNN, J.P. CHANG, University of California, Grown p-Type Ge on Si, S. GHOSH, S.M. HAN, University of New Mexico
EM-ThM6
Los Angeles 10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
EM-ThM9 Invited
EN+NS-ThM9
10:40 am
Titanium Oxide and Lithium Titanium Oxide Coated 3D Nanoelectrodes for Li-ion Microbatteries, G. PATTANAIK, J. HAAG, M.F.
Heteroepitaxial Lattice Mismatch Stress Relaxation in Nonpolar and Semipolar GaN by Dislocation Glide, J. SPECK, University of California, Santa
DURSTOCK, Air Force Research Laboratory
Barbara 11:00 am
Designing Si-based Nanoarrays by Dynamic Shadowing Growth to Tailor the Performance of Li-ion Battery Anodes, Y.-P. HE,
Invited talk continued.
EN+NS-ThM10
University of Georgia, B. YANG, University of Texas at Arlington, C.R. BECKER, Army Research Laboratory, K.-K. YANG, Binghamton University, C. BROWN, R. RAMASAMY, University of Georgia, H. WANG, Binghamton University, C.A. LUNDGREN, Army Research Laboratory, Y.-P. ZHAO, University of Georgia 11:20 am
11:40 am
Electronically Unmixed State of a Statistical Two-Dimensional Ga-Si Semiconductor Alloy on Si(111), P. EBERT, S. LANDROCK,
The Contribution of Auger Electron Spectroscopy to a Better Understanding of the Lithiation Process Occurring in Si-based Anodes Designed for Li-ion Batteries, E. RADVANYI, E. DE VITO, W. PORCHER,
EM-ThM11
EN+NS-ThM11
Forschungszentrum Jülich, Germany, Y. JIANG, Peking University, China, K.H. WU, Chinese Academy of Sciences, China, E.G. WANG, Peking University, China, R.E. DUNINBORKOWSKI, Forschungszentrum Jülich, Germany
S. JOUANNEAU, CEA Grenoble, France
EM-ThM12
Atomistic Analysis of Ge on a-SiO2 using an Emipirical Interatomic Potential to Describe Selective Epitaxial Growth, Y. CHUANG,
EN+NS-ThM12
Organic/Inorganic Composite Materials as Anodes for Lithium Ion Batteries, M. THAKUR, R.B. PERNITES, Rice University, M. ISAACSON,
University of Pennsylvania, Q. LI, D. LEONHARDT, S.M. HAN, University of New Mexico, T. SINNO, University of Pennsylvania
Lockheed Martin Space Systems, M.S. WONG, Rice University, S.L. SINSABAUGH, Lockheed Martin MS2, S.L. BISWAL, Rice University
12:00 pm
156
Thursday Morning, November 1, 2012 Electron Transport at the Nanoscale Focus Topic Room: 16 - Session ET+NS+EM-ThM Electron Transport at the Nanoscale: Nanowires and Junctions
Graphene and Related Materials Focus Topic Room: 13 - Session GR+AS+NS+SS-ThM Graphene Nanostructures
Moderators: K. Clark, Oak Ridge National Laboratory, A.-P. Li, Oak Ridge National Laboratory 8:00 am
8:20 am
Moderator: A. Kis, EPFL, Switzerland Atomic and Electronic Structures of Graphene Nanoribbon made by MBE on Vicinal SiC Substrate, F. KOMORI, K.
ET+NS+EM-ThM1 Invited
GR+AS+NS+SS-ThM1
LAUHON, Northwestern University
NAKATSUJI, T. YOSHIMURA, University of Tokyo, Japan, T. KAJIWARA, K. TAKAGI, S. TANAKA, Kyushu University, Japan
Invited talk continued.
GR+AS+NS+SS-ThM2
Functional Imaging of Semiconductor Nanowires and Devices, L.J.
Carrier Transport Behavior of Carbon Nanotube Transistors with Single Semiconducting and Metallic Tube, P. SAKALAS, Technische Universität Dresden, Germany
8:40 am
9:00 am
9:20 am
ET+NS+EM-ThM3 Electronic Transport and Structure Relations in SelfAssembled GdSi2 Quantum Wires, S.Y. QIN, T. KIM, Oak Ridge National Laboratory, Y. ZHANG, W. OUYANG, University of California Irvine, H. WEITERING, The University of Tennessee, C. SHIH, The University of Texas at Austin, A.P. BADDORF, Oak Ridge National Laboratory, R. WU, University of California Irvine, A.-P. LI, Oak Ridge National Laboratory ET+NS+EM-ThM4 Multi-Segment Nanowire Heterojunctions of AuGe and Ge: Fabrication and Electrical Transport, X.D. LI, G.W. MENG, Chinese Academy of Sciences, China, S.Y. QIN, A.-P. LI, Oak Ridge National Laboratory ET+NS+EM-ThM5 Single Charge Nano Memory using Nano Carbon Material, K. MATSUMOTO, T. KAMIMURA, Osaka University, Japan
GR+AS+NS+SS-ThM3 Fabrication of Chemically–isolated Graphene Nanoribbons (GNRs) by Scanning Probe Nanolithography using a Heated Probe, W.K. LEE, J.T. ROBINSON, R. STINE, C.R. TAMANAHA, D. GUNLYCKE, Naval Research Laboratory, M. HAYDELL, E. CIMPOIASU, U.S. Naval Academy, W. KING, University of Illinois at Urbana Champaign, P.E. SHEEHAN, Naval Research Laboratory GR+AS+NS+SS-ThM4 Choosing Electronic and Magnetic Properties of a Graphene Line Defect through Selective Adsorption, S. VASUDEVAN, George Washington University, D. GUNLYCKE, C.T. WHITE, Naval Research Laboratory
GR+AS+NS+SS-ThM5 Invited
Growth of a Linear Topological Defect in Graphene as a Gate-tunable Valley Valve, A. ZETTL, J.-H. CHEN, N. ALEM, Univ. of California at Berkeley, Lawrence Berkeley Lab, G. AUTES, F. GARGIULO, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland, A. GAUTAM, M. LINCK, Lawrence Berkeley National Lab, C. KISIELOWSKI, Lawrence Livermore National Lab, O.V. YAZYEV, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland, S.G. LOUIE, Univ. of California at Berkeley, Lawrence Berkeley Lab
9:40 am
ET+NS+EM-ThM6 Combining Atomic Structure, Local Band Alignment, and Electron Transport through Individual Semiconductor Nanowires using Scanning Tunneling Microscopy, R. TIMM, O. PERSSON, M. HJORT, M.T.
Invited talk continued.
BORGSTRÖM, L. SAMUELSON, A. MIKKELSEN, Lund University, Sweden 10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
ET+NS+EM-ThM9 Point-Contact Spectroscopy Study of Topological Insulators and Superconductors, Z. JIANG, Georgia Institute of Technology
GR+AS+NS+SS-ThM9
Crystalline and Electrical Properties of VerticallyLaminated Carbon Nanowalls formed by Two-Step Growth Method, H.
KONDO, T. KANDA, Nagoya University, Japan, M. HIRAMATSU, Meijo University, Japan, K. ISHIKAWA, M. SEKINE, M. HORI, Nagoya University, Japan 11:00 am
ET+NS+EM-ThM10 Identifying and Measuring the State Variables in TaOx Memristors, P.R. MICKEL, M. MARINELLA, C.D. JAMES, Sandia National Laboratories
GR+AS+NS+SS-ThM10 Surface Modification of Vertically Oriented Graphene Electrochemical Double-Layer Capacitors, R.A. QUINLAN, Naval Surface Warfare Center, Carderock Division, M. CAI, The College of William and Mary, A.N. MANSOUR, Naval Surface Warfare Center, Cardercock Division, R.A. OUTLAW, The College of William and Mary
11:20 am
Terahertz Spectroscopy and Carrier Dynamics of Al Doped ZnO Nanowires, S. BALCI, W. BAUGHMAN, D.S. WILBERT, G. SHEN, N.
ET+NS+EM-ThM11
GR+AS+NS+SS-ThM11 Invited
Electronic Properties and Device Applications of Wafer-Scale Graphene Nanoribbons, D. JENA, University of Notre Dame
DAWAHRE, P. KUNG, S.M. KIM, The University of Alabama
11:40 am
Probing Surface-Independent Minority Carrier Transport in Semiconductor Nanowires using Kelvin Probe Microscopy, A. SOUDI, C.
ET+NS+EM-ThM12
Invited talk continued.
HSU, Y. GU, Washington State University
12:00 pm
157
Thursday Morning, November 1, 2012 Helium Ion Microscopy Focus Topic Room: 19 - Session HI+AS+BI+NS-ThM
Biofilms and Biofouling: Marine Medical Energy Focus Topic Room: 23 - Session MB+BI-ThM
Imaging and Lithography with the Helium Ion Microscope
Biofilms and Biofouling in Medicine
Moderators: A. Gölzhäuser, University of Bielefeld, Germany, V.S. Smentkowski, General Electric Global Research Center
Moderator: L. Hanley, University of Illinois at Chicago
8:00 am
Simple and Versatile Approaches to Design Oligoethylene Based Self-Assembled Monolayers using Thiolene Chemistry on Different Metal Oxide Surfaces: Impact on Protein Adsorption, A.
8:20 am
MB+BI-ThM2
GALTAYRIES, A. DELLINGER, Chimie ParisTech (ENSCP), France, V. SEMETEY, Institut Curie, France 8:40 am
9:00 am
HI+AS+BI+NS-ThM3 Invited
MB+BI-ThM3 Antibacterial Studies of Plasma Polymerised Cineole Thin Films, A. PEGALAJAR-JURADO, Swinburne University of Technology, Australia, C.D.
BODEN, A. ASADOLLAHBAIK, H.N. RUTT, D.M. BAGNALL, University of Southampton, UK
EASTON, CSIRO Materials Science and Engineering, Australia, S.L. MCARTHUR, Swinburne University of Technology, Australia
Helium Ion Microscopy of Photonic Structures in Biological Systems, S.A.
Invited talk continued.
MB+BI-ThM4 Invited
Robustness Analysis of Biofilm Antibiotic Tolerance, R.P. CARLSON, Montana State University
9:20 am
HI+AS+BI+NS-ThM5 Imaging of Carbon Nanomembranes (CNM) and Graphene with Helium Ion Microscopy, H. VIEKER, A. BEYER, A. POLINA, A.
Invited talk continued.
WILLUNAT, N.-E. WEBER, M. BÜENFELD, A. WINTER, X. ZHANG, M. AI, A. TURCHANIN, A. GÖLZHÄUSER, Bielefeld University, Germany 9:40 am
HI+AS+BI+NS-ThM6 Imaging of Graphene Films by Helium Ion Microscope, S. OGAWA, T. IIJIMA, M. HAYASHIDA, S. NAKAHARA, S. SATO, AIST Japan
Analysis of Force Curves of Pseudomonas Aeruginosa obtained by Atomic Force Microscopy, E.V. ANDERSON, R.L. GADDIS, T.A. MB+BI-ThM6
CAMESANO, N.A. BURNHAM, Worcester Polytechnic Institute
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
HI+AS+BI+NS-ThM9 Invited
MB+BI-ThM9 Invited
FAULKNER, J. WANG, J. BOLAND, J. DONEGAN, Trinity College, Ireland
SCHANZE, University of Florida, D.G. WHITTEN, T. CORBITT, E. JI, D. DASCIER, University of New Mexico, A. PARTHASARATHY, S. GOSWAMI, University of Florida
11:00 am
Invited talk continued.
Invited talk continued.
11:20 am
HI+AS+BI+NS-ThM11
High Resolution Patterning of Carbon Nanomembranes and Graphene via Extreme UV Interference Lithography: A Helium Ion Microscopy Study, A. WINTER, A. WILLUNAT, A.
MB+BI-ThM11
10:40 am
Dopant Contrast in Helium Ion Microscopy, Y. CHEN, H. ZHANG, D. FOX, C.C.
Light and Dark Biocidal Activity of Conjugated Polyelectrolytes, K.
Mechanisms of Antimicrobial Activity of Quaternary Ammonium Compounds in Solution and Immobilized on a Surface, H.C.
VAN DER MEI, University Medical Center Groningen, The Netherlands
BEYER, University of Bielefeld, Germany, Y. EKINCI, Paul Scherrer Institute, Switzerland, A. GÖLZHÄUSER, A. TURCHANIN, University of Bielefeld, Germany 11:40 am
HI+AS+BI+NS-ThM12 Application of Helium Ion Microscope on Processing and Characterization of Nano Wires, H.X. GUO, S. NAGANO, K. ONISHI, D. FUJITA, National Institute for Materials Science (NIMS), Japan
MB+BI-ThM12 Combinatorial Discovery of Materials That Resist Bacterial Adhesion, A.L. HOOK, C. CHANG, J. YANG, University of Nottingham, UK, R. LANGER, D.G. ANDERSON, Massachusetts Institute of Technology, S. ATKINSON, P. WILLIAMS, M.C. DAVIES, M.R. ALEXANDER, University of Nottingham, UK
12:00 pm
158
Thursday Morning, November 1, 2012 Magnetic Interfaces and Nanostructures Room: 6 - Session MI+SP+AS-ThM Emerging Probes in Magnetic Imaging, Reflectometry and Characterization
Nanometer-scale Science and Technology Room: 12 - Session NS-ThM Nanoscale Imaging and Microscopy
Moderators: Z. Gai, Oak Ridge National Laboratory, V. Lauter, Oak Ridge National Laboratory 8:00 am
8:20 am
Moderator: N. Camillone, Brookhaven National Laboratory
MI+SP+AS-ThM1 Invited
NS-ThM1 Spin Friction Observed on the Atomic Scale, R. WIESENDANGER, B. WOLTER, A. KUBETZKA, K. VON BERGMANN, Y. YOSHIDA, University of Hamburg, Germany, S.-W. HLA, Ohio University
Invited talk continued.
NS-ThM2 Observing Mineral Reactions in Supercritical Carbon Dioxide Utilizing High Pressure Atomic Force Microscopy, A.S. LEA, M. XU, K.M.
Toward Microscopy with Direct Chemical and Magnetic Contrast at the Atomic Level, V. ROSE, Argonne National Laboratory
ROSSO, Pacific Northwest National Laboratory
8:40 am
9:00 am
9:20 am
9:40 am
MI+SP+AS-ThM3 Invited
NS-ThM3 Invited
Effect of Sub-Micrometer Scale Magnetic Inhomogeneity on the Magnetoelectric Coupling in Manganites, A. BISWAS, University of Florida
L. LICHTENSTEIN, H.J. FREUND, Fritz-Haber-Institute, Germany
Resolving Amorphous Solids - The Atomic Structure of Glass, M. HEYDE,
Invited talk continued.
Invited talk continued.
MI+SP+AS-ThM5 Invited
NS-ThM5 Femtosecond Time-Resolved Scanning Tunneling Microscopy on Nanostructures, H. SHIGEKAWA, University of Tsukuba, Japan
Invited talk continued.
NS-ThM6 Unusual Island Formations of Iridium on Ge(111) Studied by STM, M. VAN ZIJLL, C. MULLET, B. STENGER, E. HUFFMAN, D. LOVINGER, W. MANN,
Impact of Interfacial Magnetism on Magnetocaloric Properties of Thin Film Heterostructures, C.W. MILLER, University of South Florida
S. CHIANG, University of California, Davis
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
Polarized Neutron Reflectometry on Exchange Biased Thin Films, K.
MI+SP+AS-ThM9 Invited
NS-ThM9 Turning STM Images Into Chemical Understanding: Atomically Flat Si(100) Reveals the Mechanism of Silicon Oxidation, M.A. HINES, M.F.
TEMST, KU Leuven, Belgium
FAGGIN, K. BAO, A. GUPTA, B.S. ALDINGER, Cornell University
11:00 am
Invited talk continued.
NS-ThM10 Spectroscopic Imaging of Silicon-Hafnia Interfaces, C. GUEDJ, H. GRAMPEIX, C. LICITRA, E. MARTINEZ, CEA, LETI, MINATEC Campus, France
11:20 am
MI+SP+AS-ThM11 Soft X-ray Microscopy to Study Complexity, Stochasticity NS-ThM11 Atom Probe Tomography of AlInN/GaN based HEMT and Functionality in Magnetic Nanostructures, P. FISCHER, M.-Y. IM, Lawrence Structures, N. DAWAHRE, G. SHEN, P. TOLMER, S.M. KIM, P. KUNG, University of
10:40 am
11:40 am
Berkeley National Lab, S.-K. KIM, Seoul National University, Republic of Korea
Alabama, Tuscaloosa
MI+SP+AS-ThM12 Elemental and Magnetic Contrast using X-ray Excited Luminescence Microscopy, R.A. ROSENBERG, S. ZOHAR, D. KEAVNEY, Argonne
NS-ThM12
National Laboratory, A. MASCARENHAS, M. STEINER, National Renewable Energy Laboatory, D. ROSENMANN, R.S. DIVAN, Argonne National Laboratory
Physical Electronics, B.H. DAVIS, Z. SUO, Montana State University, I. BEECH, University of Oklahoma, D.F. PAUL, Physical Electronics, R. AVCI, Montana State University
Pit Initiation at MnS Nano-Inclusions in Carbon Steel under Exposure to Sulfate-Reducing Bacterium D. alkanexedens, J.S. HAMMOND,
12:00 pm
159
Thursday Morning, November 1, 2012 Plasma Science and Technology Room: 24 - Session PS1-ThM
Plasma Science and Technology Room: 25 - Session PS2-ThM
Plasma Processing for Disruptive Technologies (NVM, TSV, etc.)
Low Damage Processing
Moderator: S. Hamaguchi, Osaka University, Japan 8:00 am
8:20 am
Moderator: E.A. Joseph, IBM T.J. Watson Research Center PS2-ThM1 Invited
New Approaches for Overcoming Current Issues of Plasma Sputtering Process during Organic Based Micro-Electronic Device Fabrication : Room Temperature & Plasma Damage Free, M. HONG, Korea University PS1-ThM2 Damage Free Cryogenic Etching of Porous Organosilica Ultralow-k Film, L. ZHANG, IMEC, Belgium, R. LJAZOULI, T. TILLOCHER, P.
Invited talk continued.
LEFAUCHEUX, R. DUSSART, GREMI CNRS/Université d'Orléans, France, Y. MANKELEVICH, Moscow State University, Russia, J.-F. DE MARNEFFE, S. DE GENDT, M.R. BAKLANOV, IMEC, Belgium PS1-ThM3 Deep GaN Etching : Role of SiCl4 in Plasma Chemistry, J. LADROUE, GREMI - STMicroelectronics, France, M. BOUFNICHEL, STMicroelectronics, France, T. TILLOCHER, P. LEFAUCHEUX, P. RANSON, R. DUSSART, GREMI - Polytech Orleans/CNRS, France
PS2-ThM3
PS1-ThM4 Flux Controlled High Density Nitrogen Plasma for Synthesis of Nitrogen Atom Endohedral Fullerene, S.C. CHO, Tohoku University, Japan, T.
PS2-ThM4 Effect of Open Area Ratio and Pattern Structure on Fluctuations in Critical Dimension and Si Recess, N. KUBOI, T. TATSUMI, M.
KANEKO, Tohuku University, Japan, R. HATAKEYAMA, Tohoku University, Japan
FUKASAWA, J. KOMACHI, T. KINOSHITA, H. ANSAI, H. MIWA, Sony Corporation, Japan
PS1-ThM5 Etching Reaction Analysis of CoFeB by Carbon Monoxide / Methyl Alcohol Based Plasmas, K. KARAHASHI, T. ITO, S. HAMAGUCHI, Osaka
PS2-ThM5
University, Japan
TAKEDA, H. KONDO, H. AMANO, M. SEKINE, M. HORI, Nagoya University, Japan
PS1-ThM6 The Etching Characteristics of Flexible Substrate in Inductively Coupled Plasma System for Flexible Electronics, Y.S. CHUN, Y.H. JOO, C.I.
PS2-ThM6
KIM, Chung-Ang University, Republic of Korea
Co. Ltd., Republic of Korea, C.K. KIM, K.S. MIN, Sungkyunkwan University, Republic of Korea, S.I. CHO, S.W. NAM, Samsung Electronics Co. Ltd., Republic of Korea, G.Y. YEOM, Sungkyunkwan University, Republic of Korea
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
PS1-ThM9 Invited
PS2-ThM9 Theoretical Calculation of Neutralization Efficiency of Positive and Negative Chlorine Ions with Consideration of Excited States, S.
Tohoku University, Japan
OHTSUKA, N. WATANABE, Mizuho Information & Research Institute, Inc., Japan, T. KUBOTA, Tohoku University, Japan, T. IWASAKI, Y. IRIYE, K. ONO, Mizuho Information & Research Institute, Inc., Japan, S. SAMUKAWA, Tohoku University, Japan
Invited talk continued.
PS2-ThM10 High-aspect Ratio and Diameter Controlled GaAs/AlGaAs Nano-Pillar Fabrication using Defect-free Neutral Beam Etching and Biotemplate Process, Y. TAMURA, M. IGARASHI, M.E. FAUZI, W. HU, Tohoku University,
8:40 am
9:00 am
9:20 am
9:40 am
10:40 am
11:00 am
Novel Inward Plasma Etching System for Failure Analysis in Nano-Scale Semiconductor Devices, T. SHIMIZU, T. HORIE, Y. NAITOH, AIST, Japan, S. TAKAHASHI, C. IWASE, Y. SHIRAYAMA, S. YOKOSUKA, K. KASHIMURA, S. SHIMBORI, H. TOKUMOTO, Sanyu Co. Ltd., Japan
Control of Surface Properties on Plasma-Etched Gallium Nitride (GaN), R. KOMETANI, S. CHEN, J. PARK, J. CAO, Y. LU, K. ISHIKAWA, K.
Plasma Process Developments for Spintronics Devices, K. KINOSHITA,
New Method of Damaged Layer Removal by Atomic Layer Etching for Interconnection in Semiconductor, J.K. KIM, Samsung Electronics
Japan, I. YAMASHITA, Nara Institute of Science and Technology, Japan, S. SAMUKAWA, Tohoku University, Japan 11:20 am
11:40 am
PS1-ThM11 Predictions of the Etch Behavior of Complex Oxide Films for High-k and Multiferroic Applications, N. MARCHACK, J. CHEN, J.P. CHANG,
PS2-ThM11
3-Dimensional and Defect-free Neutral Beam Etching for MEMS Applications, Y. YANAGISAWA, Tohoku University, Japan, T. KUBOTA,
University of California at Los Angeles
Tohoku University and BEANS Project, Japan, B. ALTANSUKH, Tohoku University, Japan, K. MIWA, BEANS Project, Japan, S. SAMUKAWA, Tohoku University and BEANS Project, Japan
PS1-ThM12 Sub-30nm Pitch Patterning of FEOL Materials for Aggressively Scaled CMOS Devices for 10 nm Node and Beyond, H.
PS2-ThM12
MIYAZOE, S. ENGELMANN, H. TSAI, M. BRINK, B.N. TO, IBM T.J. Watson Research Center, J. CHENG, C. LIU, IBM Research - Almaden, W.S. GRAHAM, E.M. SIKORSKI, M.A. GUILLORN, N.C.M. FULLER, E.A. JOSEPH, IBM T.J. Watson Research Center
Republic of Korea
Effective Treatments Removing a Damage Layer Induced by Dry Etch in a 3D Fin-FET, M. KIM, J.Y. LEE, G.J. MIN, Samsung Electronics Co. Ltd.,
12:00 pm
160
Thursday Morning, November 1, 2012 Surface Science Room: 21 - Session SS+EN+OX-ThM
Surface Science Room: 22 - Session SS-ThM Molecular Films: Chirality & Electronic Features
Catalysis and Photocatalysis on Oxides
Photoelectrochemical Water Splitting under Sunlight Irradiation using Oxynitride Electrodes Fabricated by Particle Transfer Method, K. DOMEN,
SS+EN+OX-ThM1 Invited
Moderators: A.J. Gellman, Carnegie Mellon University, S.L. Tait, Indiana University - Bloomington SS-ThM1 Smooth and Transparent Organic Surfaces showing Exceptional Dynamic Dewetting Behavior Toward Nonpolar Liquids ~ Oleophobicity is Independent on Length of Perfluoroalkyl Groups ~, A.
The University of Tokyo, Japan
HOZUMI, J. PARK, D.F. CHENG, B. MASHEDER, C. URATA, AIST, Japan
8:20 am
Invited talk continued.
SS-ThM2 Enantioselective Separation on Chiral Au Nanoparticles, N. SHUKLA, N. KHOSLA, N. ONDECK, A.J. GELLMAN, Carnegie Mellon University
8:40 am
SS+EN+OX-ThM3 Multi-step Photooxidation of CO on TiO2(110), G.A. KIMMEL, N.G. PETRIK, Pacific Northwest National Laboratory
SS-ThM3 Invited
9:00 am
SS+EN+OX-ThM4 Design of Band Engineered Photocatalysts using Titanium Dioxide, S.W. ONG, D.E. BARLAZ, E.G. SEEBAUER, University of Illinois at
Invited talk continued.
Moderator: Z. Dohnalek, Pacific Northwest National Laboratory 8:00 am
2012 AVS Peter Mark Award Lecture: Effects of Chirality in Electron Tunneling, Molecular Excitation and Rotation, C.H. SYKES*, Tufts University
Urbana Champaign
SS+EN+OX-ThM5 Adsorption of CO2 on Oxygen Precovered TiO2(110) Surfaces, X. LIN, Y. YOON, N.G. PETRIK, G.A. KIMMEL, Z. LI, Z.-T. WANG, B.D. KAY, I.
SS-ThM5 Single-Site Studies of Chirality Transfer Complexes on Chirally Modified Pt(111), J.-C. LEMAY, P.H. MCBREEN, V. DEMERS-CARPENTIER, G.
LYUBINETSKY, R. ROUSSEAU, Z. DOHNALEK, Pacific Northwest National Laboratory
GOUBERT, Y. DONG, Université Laval, Canada, B. HAMMER, A.M.H. RASMUSSEN, L. FERRIGHI, Aarhus University, Denmark, F. MASINI, Université Laval, Canada
SS+EN+OX-ThM6 Probe of NH3 and CO Adsorption on the Very Outermost Surface of a Porous TiO2 Adsorbent Using Photoluminescence Spectroscopy, A. STEVANOVIC, J.T. YATES, JR., University of Virginia
SS-ThM6 Chirality in Flatland: 2D Crystallization, Single-Molecule Dynamics and Unidirectional Rotors, K.-H. ERNST, EMPA, Switzerland
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
SS+EN+OX-ThM9 Site-Specific Photocatalytical Reactions of O2 on SS-ThM9 Invited TiO2(110), Z.-T. WANG, Pacific Northwest National Laboratory, N.A. DESKINS, Worcester Functional Molecular Layers for Energy Applications, R.J. HAMERS,
9:20 am
9:40 am
11:00 am
Polytechnic Institute, I. LYUBINETSKY, Pacific Northwest National Laboratory
University of Wisconsin-Madison
SS+EN+OX-ThM10 Bond Selectivity in the Activation of n-alkanes on PdO(101), J.F. WEAVER, A. ANTONY, C. HAKANOGLU, F. ZHANG, University of
Invited talk continued.
Florida, A. ASTHAGIRI, The Ohio State University
11:20 am
11:40 am
SS+EN+OX-ThM11
Photoresponse, Electronic Transport and Magnetic Properties of Ti-doped (CrxFe1-x)2O3, S.E. CHAMBERLIN, T.C. KASPAR, M.E.
SS-ThM11
Atomic Study for P-type Doping Process of CuPc Molecules with STM, J.H. PARK, K. TYLER, C.T. WILLIAM, A.C. KUMMEL, University of California
BOWDEN, V. SHUTTHANANDAN, S.A. CHAMBERS, M.A. HENDERSON, Pacific Northwest National Laboratory
San Diego
SS+EN+OX-ThM12 A Nonadiabatic Mechanisms of Inequilibrium Charge SS-ThM12 Formation of 2D Superstructure with Wide Band-gap n-type Carriers Production in Pd/n-GaP Schottky Nanodiode Exposed to Atomic Behavior, T.K. SHIMIZU, J. JUNG, RIKEN, Japan, T. OTANI, University of Tokyo, Japan, Y.-K. HAN, Korea Basic Science Institute, M. KAWAI, University of Tokyo, Japan, Y. KIM, Hydrogen, S.V. SIMCHENKO, V. STYROV, Azov State Technical University, Ukraine RIKEN, Japan
12:00 pm
161 * Peter Mark Memorial Award Winner
Thursday Morning, November 1, 2012 Transparent Conductors and Printable Electronics Focus Topic Room: 7 - Session TC+EM+AS+TF+EN-ThM
Thin Film Room: 10 - Session TF+EM+SE+NS-ThM
Transparent Conductors and Devices
Nanostructuring Thin Films
Moderator: R.C. Davis, Brigham Young University
Moderator: L.M. Porter, Carnegie Mellon University 8:00 am
TF+EM+SE+NS-ThM1 Invited
Plasma Effects in Nanostructuring Thin Films, K. OSTRIKOV, CSIRO Materials Science and Engineering, Australia
8:20 am
TC+EM+AS+TF+EN-ThM2 High Conductivity in Thin ZnO:Al Deposited by Means of the Expanding Thermal Plasma Chemical Vapor Deposition, K.
Invited talk continued.
SHARMA, H.C.M. KNOOPS, M.V. PONOMAREV, Eindhoven University of Technology, The Netherlands, R. JOY, M. VELDEN, D. BORSA, R. BOSCH, Roth and Rau BV, Germany, W.M.M. KESSELS, M. CREATORE, Eindhoven University of Technology, The Netherlands 8:40 am
Directed, Liquid Phase Assembly of Patterned Metallic Films by Pulsed Laser Dewetting, Y. WU, University of Tennessee, J.D.
TC+EM+AS+TF+EN-ThM3 Invited
TF+EM+SE+NS-ThM3
Tokyo Institute of Technology, Japan
FOWLKES, M. FUENTES-CABRERA, Oak Ridge National Laboratory, N.A. ROBERTS, P.D. RACK, University of Tennessee
9:00 am
Invited talk continued.
TF+EM+SE+NS-ThM4 Nanosphere Lithography for Bit Patterned Media, A.G. OWEN, H. SU, A.M. MONTGOMERY, S.M. KORNEGAY, S. GUPTA, University of Alabama
9:20 am
TC+EM+AS+TF+EN-ThM5 Surface Functionalization of Amorphous Zinc Tin Oxide Thin Film Transistors, G.S. HERMAN, M.S. RAJACHIDAMBARAM, Oregon
TF+EM+SE+NS-ThM5
State University, A. PANDEY, S. VILAYURGANAPATHY, P. NACHIMUTHU, S. THEVUTHASAN, Pacific Northwest National Laboratory
ADAMS, R. REEVES, Sandia National Laboratories
TC+EM+AS+TF+EN-ThM6 Work Function and Valence Band Structure of Oxide Semiconductors and Transparent Conducting Oxides Grown by Atomic Layer Deposition, A. YANGUAS-GIL, Argonne National Laboratory, R.T.
TF+EM+SE+NS-ThM6 Ag Nanoparticles Supported by (111) Facets on Biaxial CaF2 Nanoblades, M. AUER, D. YE, Virginia Commonwealth University
9:40 am
Recent Progress in Oxide Semiconductors and Oxide TFTs, H. HOSONO,
Effects of Nanometer Scale Periodicity on the SelfPropagating Reaction Behaviors of Sputter-Deposited Multilayers, D.
HAASCH, University of Illinois at Urbana Champaign, J.A. LIBERA, J.W. ELAM, Argonne National Laboratory 10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
TC+EM+AS+TF+EN-ThM9 Invited
Low Temperature, High Performance Solution-Processed Metal Oxide Thin Film Transistors formed by a ‘Sol-Gel on Chip’ Process, H. SIRRINGHAUS, University of Cambridge, UK
11:00 am
Invited talk continued.
11:20 am
TC+EM+AS+TF+EN-ThM11 In Situ Measurements of Interface States and Junction Electrical Properties of Electrically Biased Metal / β-Ga2O3 Structures, H. PHAM, X. ZHENG, B. KRUEGER, M.A. OLMSTEAD, F.S. OHUCHI, University of Washington
11:40 am
TC+EM+AS+TF+EN-ThM12 Atmospheric Pressure Dielectric Barrier Discharge (DBD) Post Annealing of Aluminium Doped Zinc Oxide (AZO) Films, Y.L. WU, E. RITZ, J. HONG, T.S. CHO, D.N. RUZIC, University of Illinois at Urbana Champaign
12:00 pm
162
Thursday Morning, November 1, 2012 Thin Film Room: 11 - Session TF+NS+EM-ThM Thin Films: Growth and Characterization-II
Moderator: C. Vallee, LTM - MINATEC - CEA/LETI, France 8:00 am
TF+NS+EM-ThM1 Plasma-enhanced Atomic Layer Epitaxy of AlN Films on GaN, N. NEPAL, J.K. HITE, N. MAHADIK, M.A. MASTRO, C.R. EDDY, JR., U.S. Naval Research Laboratory
8:20 am
TF+NS+EM-ThM2 In Situ Infrared Spectroscopy Study of Cobalt Silicide Thin Film Growth by Atomic Layer Deposition, K. BERNAL RAMOS, University of Texas at Dallas, M.J. SALY, SAFC Hitech, J. KWON, University of Texas at Dallas, M.D. HALLS, Materials Design Inc., R.K. KANJOLIA, SAFC Hitech, Y.J. CHABAL, University of Texas at Dallas
8:40 am
TF+NS+EM-ThM3 Invited
Thin Film Growth: From Gas Phase to Solid Phase – Links and Control, P. RAYNAUD, CNRS and University Paul Sabatier – Toulouse – France
9:00 am
Invited talk continued.
9:20 am
TF+NS+EM-ThM5 Investigation of Precursor Infiltration and ALD Growth on Polymers and Effect on Fiber Mechanical Properties, R.P. PADBURY, J.S. JUR, North Carolina State University
9:40 am
Atomic Layer Deposition Enabled Synthesis of Nanostructured Composite BiFeO3/CoFe2O4 Thin Films for Multiferroic Applications, C.D. PHAM, J.P. CHANG, University of California at Los Angeles
TF+NS+EM-ThM6
10:00 am
BREAK - Complimentary Coffee in Exhibit Hall
10:20 am
BREAK - Complimentary Coffee in Exhibit Hall
10:40 am
TF+NS+EM-ThM9 In Situ Infrared Spectroscopic Study of Atomic Layer Deposited TiO2 Thin Film Formation Using Non-Aqueous Routes, K.
11:00 am
11:20 am
BERNAL RAMOS, University of Texas at Dallas, G. CLAVEL, Université Montpellier 2, France, C. MARICHY, Universidade de Aveiro / CICECO, Portugal, W. CABRERA, The University of Texas at Dallas, N. PINNA, Universidade de Aveiro / CICECO, Portugal, Y.J. CHABAL, University of Texas at Dallas TF+NS+EM-ThM10 Nanomechanical Shaft-Loading Blister Testing of Thin Films, M. BERDOVA, A. BABY, J. LYYTINEN, Aalto University, Finland, K. GRIGORAS, L. KILPI, H. RONKAINEN, VTT Technical Research Center, Finland, J. KOSKINEN, S. FRANSSILA, Aalto University, Finland TF+NS+EM-ThM11 Phase Formation and Thermal Stability of ArcEvaporated ZrAlN Thin Films, L. ROGSTRÖM, Linköping University, Sweden, M.P. JOHANSSON, SECO Tools AB, Sweden, M. AHLGREN, Sandvik Tooling AB, Sweden, N. GHAFOOR, Linköping University, Sweden, J. ALMER, Advanced Photon Source, Argonne National Lab, L. HULTMAN, M. ODÉN, Linköping University, Sweden
11:40 am
TF+NS+EM-ThM12 Ion-assisted Epitaxial Sputter-Deposition and Properties of Metastable Zr1−xAlxN(001) (0.05 x 0.25 ) Alloys, AR.B. MEI, B.M. HOWE, University of Illinois at Urbana Champaign, N. GHAFOOR, E. BROITMAN, Linköping University, Sweden, M. SARDELA, University of Illinois at Urbana Champaign, L. HULTMAN, Linköping University, Sweden, A. ROCKETT, J.E. GREENE, I. PETROV, University of Illinois at Urbana Champaign, M. ODEN, H. FAGER, Linköping University, Sweden
12:00 pm
163
Thursday Lunch, November 1, 2012 Exhibitor Technology Spotlight Room: West Hall - Session EW-ThL Exhibitor Technology Spotlight
Moderator: D. Surman, Kratos Analytical Inc. 12:00 pm
EW-ThL1
EW Multi Vendor Presentation: Kratos/PHI/Thermo/Omicron
12:20 pm
12:40 pm
1:00 pm
1:20 pm
1:40 pm
164
NOTES
165
Thursday Afternoon, November 1, 2012 Applied Surface Science Electronic Materials and Processing Room: 20 - Session AS-ThA Room: 9 - Session EM+MI-ThA Applications of Large Cluster Ion Beams - Part 2 (2:00-3:20 pm)/ Surface Analysis using Synchrotron Techniques (3:40-5:40 pm) Semiconductor Heterostructures II + Heusler Alloys
2:00 pm
2:20 pm
Moderators: A.V. Walker, University of Texas at Dallas, C.M. Mahoney, Moderators: J.E. Ayers, University of Connecticut, Pacific Northwest National Laboratory, M.L. Pacholski, The Dow B.D. Schultz, University of California, Santa Barbara Chemical Company, A. Herrera-Gomez, UAM-Azcapotzalco and CINVESTAV-Queretaro, Mexico AS-ThA1 Applications of a C60 Ion Source for Surface Chemical Analysis: EM+MI-ThA1 Dislocation Compensation in Ungraded ZnSySe1-y/GaAs It’s Not Just for Polymers, W.F. STICKLE, M.D. JOHNSON, D. BILICH, HP (001) Heterostructures, T.M. KUJOFSA, J.E. AYERS, University of Connecticut
Towards Ultimate Organic Depth Profiling using Argon Cluster Beams – Recommendations for Dual Beam Profiling and Sample Charge Compensation, R. HAVELUND, A.G. SHARD, M.P. SEAH, I.S. GILMORE,
EM+MI-ThA2 Dynamical X-ray Diffraction from Semiconductor Heterostructures with Asymmetrical Dislocation Densities, P.B. RAGO, J.E.
AS-ThA2
AYERS, University of Connecticut
National Physical Laboratory, UK
2:40 pm
3:00 pm
AS-ThA3 Comparative Study of C60 and Gas Cluster Ion Sputtering in XPS Depth Profiling for Thin Film Analysis, S.S. ALNABULSI, J.F. MOULDER,
EM+MI-ThA3 Invited
S.N. RAMAN, S.R. BRYAN, J.S. HAMMOND, Physical Electronics
E. FITZGERALD, Massachusetts Institute of Technology
Damage Profiles of Si (001) Surfaces Bombarded by Ar Gas Cluster Ion Beam, J.G. CHUNG, D.J. YUN, Y.K. KYOUNG, H.I. LEE, J.C. LEE,
Invited talk continued.
AS-ThA4
Engineered Substrates and Lattice Mismatched Semiconductor Devices,
Samsung Advanced Institute of Technology, Republic of Korea, H.J. KANG, Chungbuk National University (CBNU), Republic of Korea 3:20 pm
BREAK
BREAK
3:40 pm
AS-ThA6
Non-Destructive Depth Profiling using VKE-XPS and Maximum Entropy Regularization, C. WEILAND, J.C. WOICIK, National Institute of Standards
EM+MI-ThA6 Invited
and Technology
4:00 pm
4:20 pm
AS-ThA7 The Early Stage of Corrosion of Cu3Au Alloy, P. RAJPUT, ESRF, France, A. GUPTA, UGC-DAE Consortium for Scientific Research, India, C. MENEGHINI, Universita di“Roma Tre”, Italy, G. SHARMA, UGC-DAE Consortium for Scientific Research, India, J. ZEGENHAGEN, ESRF, France
Epitaxial Growth and Electronic Bandstructure of the Semiconducting Half Heusler Compound CoTiSb, J. KAWASAKI, University of California Santa Barbara, L. JOHANSSON, M. HJORT, R. TIMM, Lund University, Sweden, B. SHOJAEI, University of California Santa Barbara, A. MIKKELSEN, Lund University, Sweden, B.D. SCHULTZ, C. PALMSTROM, University of California Santa Barbara Invited talk continued.
AS-ThA8 Invited
EM+MI-ThA8 Invited
and Technology
Research Center
4:40 pm
Invited talk continued.
Invited talk continued.
5:00 pm
AS-ThA10 Hard X-ray Photoemission Spectroscopy used to Investigate the Resistive Switching Behavior of Manganite Heterostructures: The Case of Ti/PrCaTiO3 Interface, F. OFFI, CNISM and Dipartimento di Fisica,
EM+MI-ThA10
Hard X-ray Photoelectron Spectroscopy (HAXPES) Investigations of Electronic Materials and Interfaces, J.C. WOICIK, National Institute of Standards
Application of Magnetic Heusler Alloys to All-Metal Sensors for Ultrahigh-Density Magnetic Recording, J.R. CHILDRESS, HGST San Jose
Growth of Epitaxial Co2MnSi/MgO/Co2MnSi Magnetic Tunnel Junctions by Molecular Beam Epitaxy, S. PATEL, A. KOZHANOV, B.D. SCHULTZ, C. PALMSTRØM, University of California, Santa Barbara
Università Roma Tre, Italy, F. BORGATTI, CNR-ISMN, Bologna, Italy, Y. YAMASHITA, A. YANG, M. KOBATA, K. KOBAYASHI, Synchrotron X-ray Station at SPring-8, NIMS, Japan, C. PARK, A. HERPERS, R. DITTMANN, Peter Grünberg Institut, Research Center Jülich, Germany, G. PANACCIONE, CNR-IOM, Basovizza-Trieste, Italy 5:20 pm
Fabrication of Highly Ordered Co2FeAl Thin Films by Reactive Ion Beam Deposition for Spintronic Devices, Y.S. CUI, University of EM+MI-ThA11
Virginia, S. SCHÄFER, T. MEWES, University of Alabama, M. OSOFSKY, Naval Research Laboratory, J.W. LU, S.A. WOLF, University of Virginia
5:40 pm
166
Thursday Afternoon, November 1, 2012 Electronic Materials and Processing Room: 14 - Session EM+TF+AS-ThA
Energy Frontiers Focus Topic Room: 15 - Session EN+AS-ThA
Growth and Characterization of Group III-Nitride Materials
Characterization of Energy Materials and Systems
EM+TF+AS-ThA1 Invited
EN+AS-ThA1 Invited
SITAR, HexaTech, Inc. & North Carolina State University, B. MOODY, S. CRAFT, R. SCHLESSER, R. DALMAU, J. XIE, S. MITA, HexaTech, Inc., T. RICE, J. TWEEDY, J. LEBEAU, L. HUSSEY, R. COLLAZO, B. GADDY, D. IRVING, North Carolina State University
D. KUCIAUSKAS, A. KANEVCE, R. NOUFI, National Renewable Energy Laboratory
Moderator: N. Dietz, Georgia State University 2:00 pm
Moderator: L. Lohstreter, Medtronic, Inc.
AlN-based Technology for Deep UV and High-power Applications, Z.
Growth Temperature and Stoichiometry Effects on the Inherent Stability of CdS/CdTe Solar Cells, D.S. ALBIN, T.A. GESSERT, R. DHERE, S.-H. WEI, J. MA,
2:20 pm
Invited talk continued.
Invited talk continued.
2:40 pm
EM+TF+AS-ThA3 Atomic Layer Deposition of AlN Thin Films as Gate Dielectrics for Wide Bandgap Semiconductors, Y.-C. PERNG, J.P. CHANG, D.
EN+AS-ThA3
CHIEN, University of California at Los Angeles
RUBLOFF, University of Maryland
3:00 pm
EM+TF+AS-ThA4 Low-Temperature Behavior of the Surface Photovoltage in p-type GaN, J.D. MCNAMARA, M. FOUSSEKIS, A.A. BASKI, M.A. RESHCHIKOV, Virginia Commonwealth University
EN+AS-ThA4
3:20 pm
BREAK
BREAK
3:40 pm
EM+TF+AS-ThA6 Controlling GaN Polarity on GaN Substrates, J.K. HITE, M.E. TWIGG, J.A. FREITAS, JR., M.A. MASTRO, J.R. MEYER, I. VURGAFTMAN, S. O'CONNOR, N.J. CONDON, F.J. KUB, S.R. BOWMAN, C.R. EDDY, JR., U.S. Naval Research Laboratory
EN+AS-ThA6
EM+TF+AS-ThA7 Invited
EN+AS-ThA7 Selective Adsorption Behavior of CO2 and C2 Hydrocarbon Isomers over N2 and Methane in a Flexible Metal Organic Frameworks,
4:00 pm
4:20 pm
Direct Green and Yellow Light Emitting Diodes – Polarization Control and Epitaxy, C. WETZEL, T. DETCHPROHM, Rensselaer Polytechnic Institute
Hybrid Configurations of Nanostructured Electrical Energy Storage for High Power-Energy Performance, L.C. HASPERT, S.B. LEE, G.W.
XPS Characterization of Organic Gradients in Organic Photovoltaic and Organic Light Emitting Devices Using Ar GCIB Depth Profiling, S.N. RAMAN, J.S. HAMMOND, J.F. MOULDER, Physical Electronics
Characterization of Degradation Mechanisms of Membrane Electrode Assemblies by XPS and SEM Imaging, A. PATEL, K.
ARTYUSHKOVA, P. ATANASSOV, University of New Mexico, S. WESSEL, V. COLBOW, M. DUTTA, Ballard Power Systems, Canada
N. NIJEM, P. THISSEN, University of Texas at Dallas, P. CANEPA, Wake Forest University, H. WU, J. LI, Rutgers University, T. THONHAUSER, Wake Forest University, Y.J. CHABAL, University of Texas at Dallas
Fabrication and Characterization of a PCBM-Terminated Organic Monolayer on a Si(111) Surface, T.J. MILLER, A.V. TEPLYAKOV,
Invited talk continued.
EN+AS-ThA8
University of Delaware
4:40 pm
The Influence of Substrate and Gas Phase Temperatures EN+AS-ThA9 Conversion Reaction of Thin Film Metal Fluorides and Metal on the Properties of InN Epilayers, M.K.I. SENEVIRATHNA, S.D. GAMAGE, R. Oxides Exposed to Atomic Lithium, R. THORPE, S. RANGAN, R.A. BARTYNSKI,
EM+TF+AS-ThA9
ATALAY, R.L. SAMARAWEERA, A.G.U. PERERA, Georgia State University, B. KUCUKGOK, A.G. MELTON, I. FERGUSON, University of North Carolina at Charlotte, N. DIETZ, Georgia State University 5:00 pm
5:20 pm
Rutgers University
EM+TF+AS-ThA10 Absence of Electron Accumulation at InN(11-20) Cleavage Surfaces, H. EISELE, Technische Universität Berlin, Germany, S. SCHAAFHAUSEN, Forschungszentrum Jülich, Germany, A. LENZ, Technische Universität Berlin, Germany, A. SABITOVA, Forschungszentrum Jülich, Germany, L. IVANOVA, M. DÄHNE, Technische Universität Berlin, Germany, Y.-L. HONG, S. GWO, National Tsing-Hua University, Taiwan, P. EBERT, Forschungszentrum Jülich, Germany EM+TF+AS-ThA11 Dependence of Gallium Incorporation and Structural
Properties of Indium-rich InxGa1-xN Epilayers on Ammonia - MO Precursor Pulse Separation, S.D. GAMAGE, R. ATALAY, M.K.I. SENEVIRATHNA,
R.L. SAMARAWEERA, Georgia State University, A.G. MELTON, I. FERGUSON, University of North Carolina at Charlotte, N. DIETZ, Georgia State University 5:40 pm
EM+TF+AS-ThA12 MBE-Growth of Coherent-Structure InN/GaN ShortPeriod Superlattices as Ordered InGaN Ternary Alloys for III-N Solar Cell Application, A. YOSHIKAWA, K. KUSAKABE, N. HASHIMOTO, T. OKUDA, T. ITOI, Chiba University, Japan
167
Thursday Afternoon, November 1, 2012
2:00 pm
Energy Frontiers Focus Topic Room: 7 - Session EN+NS-ThA
Electron Transport at the Nanoscale Focus Topic Room: 16 - Session ET+SS+GR+SP-ThA
Thermophotovoltaics, Thermoelectrics and Plasmonics
Electron Transport at the Nanoscale: Molecules and Defects
Moderator: R.A. Quinlan, Naval Surface Warfare Center, Cardercock Division EN+NS-ThA1 Structuring of the Radiative Thermal Emission in Tungsten Inverse Opals for Thermophotovoltaic Applications, M.D. LOSEGO, North
Moderators: S. Allen, The University of Nottingham, UK, J. Wendelken, Oak Ridge National Laboratory ET+SS+GR+SP-ThA1 Invited
Molecule Substrate Interactions Probed by Scanning Tunneling Microscopy, H.-J. GAO, Chinese Academy of Sciences
Carolina State University, K.A. ARPIN, University of Illinois at Urbana Champaign, B. KALANYAN, North Carolina State University, P.V. BRAUN, University of Illinois at Urbana Champaign, G.N. PARSONS, North Carolina State University EN+NS-ThA2 Long Wavelength Barrier Based Thermophotovoltaic Cells, D.F. DEMEO, C.M. SHEMELYA, T.E. VANDERVELDE, Tufts University
Invited talk continued.
EN+NS-ThA3 Invited
ET+SS+GR+SP-ThA3 Electron Localization in Single Mixed-Valence Molecules, R.C. QUARDOKUS, N.A. WASIO, Y. LU, S.A. KANDEL, University of Notre Dame
3:00 pm
Invited talk continued.
ET+SS+GR+SP-ThA4 Rectification by a Single Molecular Diode, L. ADAMSKA, University of South Florida, M. KOZHUSHNER, Institute of Chemical Physics, Russian Academy of Sciences, I.I. OLEYNIK, University of South Florida
3:20 pm
BREAK
BREAK
3:40 pm
EN+NS-ThA6
Plasmonic Polymer Solar Cells with Spectrally Tuned Au/SiO2 Core/Shell Nanorods incorporated in Active Layers, V. JANKOVIC,
ET+SS+GR+SP-ThA6
J.P. CHANG, UCLA
ZHANG, I. VLASSIOUK, A.-P. LI, Oak Ridge National Laboratory
EN+NS-ThA7 Optics and Photonics Research Priorities and Grand Challenges as Relating to Today's Energy Frontiers, E.B. SVEDBERG, The
ET+SS+GR+SP-ThA7 Invited
2:20 pm
2:40 pm
4:00 pm
Nanowires and Nanowire Heterostructures for Thermoelectric Energy Harvesting, Y. WU, Purdue University
National Academies
Electron Transport Study of Graphene Grain Boundaries Using Scanning Tunneling Potentiometry, K. CLARK, X.-G.
Static and Dynamic Conductance in Topological Defects in Ferroelectrics, S.V. KALININ, Oak Ridge National Laboratory
4:20 pm
Invited talk continued.
4:40 pm
ET+SS+GR+SP-ThA9
Transport and Mechanical Properties of Molecular Junctions formed by Acetophenon Deposited on Si (100) Surface, M. SETVIN, Z. MAJZIK, O. KREJCI, P. HAPALA, P. JELINEK, Institute of Physics of ASCR, Czech Republic
5:00 pm
Experimental Determination of the Charge Neutrality Level (CNL) of Conjugated Polymers, W. WANG, R. SCHLAF, University of South
ET+SS+GR+SP-ThA10 Florida
5:20 pm
Investigation on the Electronic Structure of Arylthio (ArS)-functionized CdSe Nanoparticle Hybrid Materials, Z. LI, University of
ET+SS+GR+SP-ThA11
South Florida, K. MAZZIO, University of Washington, S. GUTMANN, University of South Florida, C.K. LUSCOMBE, University of Washington, R. SCHLAF, University of South Florida
5:40 pm
168
Thursday Afternoon, November 1, 2012 Graphene and Related Materials Focus Topic Room: 13 - Session GR+EM+NS+SS+TF-ThA
Biofilms and Biofouling: Marine Medical Energy Focus Topic Beyond Graphene: BN and Other 2D Electronic Materials; 2D Room: 23 - Session MB+BI-ThA Marine Biofouling Heterostructures
2:00 pm
Moderator: I.I. Oleynik, University of South Florida Moderator: D.E. Barlow, Naval Research Laboratory GR+EM+NS+SS+TF-ThA1 X-ray Photoelectron Spectroscopy Investigation of MB+BI-ThA1 Invited the Valence and Conduction Band Offset at Hexagonal a-BN:H/Si The Role of Oxygen in Microbiologically Influenced Marine Corrosion, B.J. LITTLE, J.S. LEE, R.I. RAY, Naval Research Laboratory Interfaces, S. KING, M. FRENCH, J. BIELEFELD, Intel Corporation, M. JAEHNIG, Intel Coroporation, M. KUHN, B. FRENCH, Intel Corporation
2:20 pm
GR+EM+NS+SS+TF-ThA2 Monolayer Graphene-Boron Nitride 2D Heterostructures, R. CORTES, J. LAHIRI, E. SUTTER, P.W. SUTTER, Brookhaven
Invited talk continued.
National Laboratory
2:40 pm
GR+EM+NS+SS+TF-ThA3 Invited
Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers, J. LOU, S. NAJMAEI, Z. LIU, Y. ZHAN, P. AJAYAN, Rice University
MB+BI-ThA3 3D-Tracking of Biofouling Microorganisms with Digital In-Line Holographic Microscopy, S.M. STUPPY, University of Heidelberg, Germany, A. ROSENHAHN, T. SCHWARTZ, Karlsruhe Institute of Technology, Germany, T. EDERTH, Linköping University, Sweden, J.A. CALLOW, M.E. CALLOW, University of Birmingham, UK, B. LIEDBERG, Linköping University, Sweden, G.W. SWAIN, Florida Institute of Technology, M.H. GRUNZE, Karlsruhe Institute of Technology, Germany MB+BI-ThA4 A Multidisciplinary Approach to Tackling Microbiologically Influenced Corrosion, S.A. WADE, P.R. STODDART, E. PALOMBO, M.M. HLAING, M.A. JAVED, D. MARIĆ, D. ELDRIDGE, S.L. MCARTHUR, Swinburne University of Technology, Australia
3:00 pm
Invited talk continued.
3:20 pm
BREAK
BREAK
3:40 pm
GR+EM+NS+SS+TF-ThA6 Formation of Silicene and 2D Si Sheets on Ag(111): Growth Mode, Structural and Electronic Properties, P. VOGT,
MB+BI-ThA6 Bioinspired Surfaces with Dynamic Topography for Active Control of Biofouling, X.H. ZHAO, G.P. LOPEZ, D. RITTSCHOF, Duke University
Technical University of Berlin, Germany, T. BRUHN, A. RESTA, B. EALET, CNRS CiNaM, Marseille, France, P. DE PADOVA, CNR-ISM, Rome, Italy, G. LE LAY, CNRS CiNaM, Marseille, France 4:00 pm
4:20 pm
4:40 pm
5:00 pm
5:20 pm
GR+EM+NS+SS+TF-ThA7 Yttria-monolayer on Pt(111) Supported Graphene: MB+BI-ThA7 Seasonal Study of Cathodic Current and Elucidation of A Novel Two Dimensional Heterostructure and its Affect on Charge Oxygen Reduction Enhancement Mechanism in Marine Biofilms, M.J. Doping of Graphene, R. ADDOU, A. DAHAL, M. BATZILL, University of South Florida STROM, Naval Research Laboratory, S.C. DEXTER, University of Delaware
GR+EM+NS+SS+TF-ThA8 Invited
MB+BI-ThA8 Invited
Invited talk continued.
Invited talk continued.
Probing the BCN-triangle by Computations—Outside the Carbon Corner, Tailoring Anode and Cathode Biofilms for Higher Current Production in YAKOBSON, Rice University Bioelectrochemical Systems, J. REGAN, Penn State University
GR+EM+NS+SS+TF-ThA10 Invited
Single-layer MoS2 Devices and Circuits, A. KIS, EPFL, Switzerland
Invited talk continued.
5:40 pm
169
Thursday Afternoon, November 1, 2012 Plasma Science and Technology Room: 25 - Session PS-ThA
Surface Science Room: 21 - Session SS+NS-ThA
Plasma Sources
Surface Science of Nanostructures
PS-ThA1 Invited
SS+NS-ThA1 Invited
Moderator: L. Chen, Tokyo Electron America 2:00 pm
Moderator: J.M. Millunchick, University of Michigan
Study on Microwave ECR Plasma Source for 450-mm Wafer Etching, K. MAEDA, Hitachi, Ltd., Japan, H. TAMURA, S. OBAMA, M. IZAWA, Hitachi HighTechnologies Corp., Japan, G. MIYA, Hitachi, Ltd., Japan
Direct Atomic Scale Imaging and Spectroscopy of III-V Semiconductor Nanowire Surfaces, A. MIKKELSEN, Lund University, Sweden
2:20 pm
Invited talk continued.
Invited talk continued.
2:40 pm
PS-ThA3 A Grid Reactor with Low Ion Energy Bombardment for Large Area PECVD of Thin Film Silicon Solar Cells, M. CHESAUX, A.A. HOWLING,
SS+NS-ThA3
Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland, U. KROLL, D. DOMINÉ, Oerlikon Solar-Lab SA, Switzerland, CH. HOLLENSTEIN, Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland
D.-H. OH, C.-Y. PARK, J.R. AHN, Sungkyunkwan University, Republic of Korea
3:00 pm
PS-ThA4 Plasma Generation and Delivery from a VHF Remote Source, D. CARTER, D. HOFFMAN, K. PETERSON, R. GRILLEY, Advanced Energy Industries Inc.
SS+NS-ThA4 Influence of Surface Steps on the Initial Oxidation of TiN (100), M. HONG, S.R. PHILLPOT, S.B. SINNOTT, University of Florida
3:20 pm
BREAK
BREAK
3:40 pm
PS-ThA6 Mechanical Optimization of a Plasma Source Device, S. POLAK, M. THORNTON, D. HOFFMAN, D. CARTER, Advanced Energy Industries Inc.
SS+NS-ThA6 Growth of Ag/Ge(111) Phases Studied with LEEM and LEED, S. CHIANG, C. MULLET, UC Davis
4:00 pm
PS-ThA7 Studying of the Transition Modes in a Single High Frequency and Double RF-CCP Discharge using OES, D. AKBAR, University of Wisconsin
SS+NS-ThA7
Madison, Y.M. SUNG, Kyungsung University, South Korea
NEXUS XPS Facility, Newcastle University UK, A.J. BLANCH, A.D. SLATTERY, J.S. QUINTON, Flinders University, Australia
PS-ThA8 Impact of Reactor Design on Plasma Polymerization Processes - An International Round-Robin Study, J.D. WHITTLE, A. MICHELMORE, D.A.
SS+NS-ThA8
STEELE, R.D. SHORT, University of South Australia
ROLDAN CUENYA, University of Central Florida
PS-ThA9 A Mini Plasma Source for In Situ Sample Cleaning, N.B. KOSTER, F.T. MOLKENBOER, R.J. BOLT, T.J. VERSLOOT, J.P.B. JANSSEN, TNO Technical Sciences, The Netherlands
SS+NS-ThA9
PS-ThA10
Magnetic Neutral Loop Discharge Reactor for Low-k Dielectric Plasma Processing, W.Y. LI, Z. LING, H.-Z. ZHANG, J.A. BRAY, T.M. GRIFFIN, M.T.
SS+NS-ThA10
NICHOLS, University of Wisconsin-Madison, B.N. MOON, Y.M. SUNG, Kyungsung University, Korea, S. BANNA, Applied Materials, Inc., Y. NISHI, Stanford University, J.L. SHOHET, University of Wisconsin-Madison
DENDZIK, Jagiellonian University, Poland, A. TERFORT, Goethe University, Germany, P. CYGANIK, Jagiellonian University, Poland
PS-ThA11 High Efficiency ICP Source for Plasma Dry Clean Processing, V. NAGORNY, O. TODOR, V. SURLA, A. KADAVANICH, Mattson Technology, Inc.
SS+NS-ThA11
4:20 pm
4:40 pm
5:00 pm
5:20 pm
Spontaneous Assembly of Ordered Atomic Wires with a Long Interwire Distance on a Stepped Nanotemplate, B.G. SHIN, M.K. KIM,
A Synchrotron XPS Study of the Radio-Frequency SF6 Plasma Fluorination of Single-Walled Carbon Nanotubes, A.J. BARLOW,
Solving the Shape of Micellar Pt Nanoparticles Supported on TiO2(110) and γ-Al2O3: A STM, TEM and EXAFS Study, F. BEHAFARID, B.
Geometrical, Electronic, and Vibrational Properties of Bare and H-covered Ptn(n=22, 33, 44, 55, and 85) Nanoparticles, G. SHAIFAI, S.
HONG, M. ALCANTARA, T.S. RAHMAN, University of Central Florida
The Effect of S to Se Substitution in SAMs: Odd-Even Polymorphism of Biphenyl-Substituted Alkaneselenolate on Au(111), M.
Molecular Self-Assembly by Ionic Bonding in a Series of Carboxylate Species on the Cu(100) Surface, D. SKOMSKI, S.L. TAIT, Indiana
University - Bloomington
5:40 pm
170
Thursday Afternoon, November 1, 2012 Surface Science Room: 22 - Session SS-ThA
Thin Film Room: 11 - Session TF+AS+SS-ThA
Liquid/Surface Interactions
Thin Films: Growth and Characterization-III
SS-ThA1 Interface Properties of Aqueous Nitrile Solutions, K.A. PERRINE, A. MARGARELLA, M.H.C. VAN SPYK, University of California Irvine, B. WINTER, HelmholtzZentrum Berlin für Materialien und Energie, Germany, H. BLUHM, Lawrence Berkeley National Laboratory, J.C. HEMMINGER, University of California Irvine
TF+AS+SS-ThA1
Moderator: G.A. Kimmel, Pacific Northwest National Laboratory 2:00 pm
2:20 pm
2:40 pm
Moderator: M.R. Davidson, University of Florida
Atomic Force Microscopy (AFM)-Based Nanografting for the Study of Self-Assembled Monolayer Formation of Organophosphonic Acids on Al2O3 Single Crystal Surfaces, B. TORUN, B. OEZKAYA, G.
GRUNDMEIER, University of Paderborn, Germany
SS-ThA2 Photoelectron Spectroscopy of Sulfuric Acid Aqueous Solutions, A. MARGARELLA, K.A. PERRINE, University of California Irvine, T. LEWIS, Lawrence Livermore National Laboratory, M. FAUBEL, Max-Planck-Institut für Dynamik und Selbstorganisation, Germany, B. WINTER, Helmholtz-Zentrum Berlin für Materialien und Energie and BESSY, Germany, J.C. HEMMINGER, University of California Irvine
TF+AS+SS-ThA2 SIMS as a Method for Probing Stability of the MoleculeSubstrate Interface in SAMs, J. OSSOWSKI, J. RYSZ, Jagiellonian University,
SS-ThA3 Invited
TF+AS+SS-ThA3 Wet Chemical Surface Modification of Silicon Oxide and Oxide Free Silicon by Aluminum Oxide, P. THISSEN, A. VEGA, T. PEIXOTO, Y.J.
Using Nanoscale Amorphous Solid Water Films to Create and Study Deeply Supercooled Liquid Water, S.R. SMITH, B.D. KAY, Pacific Northwest
Poland, A. TERFORT, Goethe University, Germany, P. CYGANIK, Jagiellonian University, Poland
CHABAL, University of Texas at Dallas
National Laboratory
3:00 pm
TF+AS+SS-ThA4 Static and Dynamic Depth Profiling of Thin Films with Low Energy Ion Scattering (LEIS), H.R.J. TER VEEN, M. FARTMANN, Tascon
Invited talk continued.
GmbH, Germany, T. GREHL, ION-TOF GmbH, Germany, B. HAGENHOFF, Tascon GmbH, Germany
3:20 pm
BREAK
BREAK
3:40 pm
SS-ThA6 DFT Study of Water Dissociation and Diffusion on Metal Surfaces, Kinks and Step, L. ARNADOTTIR, Oregon State University
TF+AS+SS-ThA6 Invited
Paul Holloway Award Talk: Surface Chemistry and Structure of Alloy Thin Films under Reaction Conditions and their Correlations to Catalytic Performances of CO2 Conversion and Methane Partial Oxidation, F. TAO*, University of Notre Dame
4:00 pm
4:20 pm
4:40 pm
SS-ThA7 Structures and Reactions of Water on Cu(110) Studied by STM and Noncontact AFM, Y. SHI, Lawrence Berkeley National Laboratory, P. CABRERASANFELIX, Donostia International Physics Center, Spain, B.Y. CHOI, Lawrence Berkeley National Laboratory, A. ARNAU, D. SÁNCHEZ-PORTAL, Centro de Física de Materiales, Spain, R. PÉREZ, Universidad Autónoma de Madrid, Spain, M. SALMERON, Lawrence Berkeley National Laboratory SS-ThA8 Adsorption and One-Dimensional Chain Formation of Water on TiO2(110), J. LEE, D.C. SORESCU, X. DENG, National Energy Technology Laboratory, K.D. JORDAN, University of Pittsburgh
SS-ThA9 Characterization of Surface and Adsorbate Chemistry on TiO2; Particle Ensembles and Atmospherically Prepared TiO2; Single Crystalline Surfaces, C. KUNZE, B. TORUN, G. GRUNDMEIER, University of
Invited talk continued.
TF+AS+SS-ThA8 Time-resolved and Surface Plasmon Resonance Studies in Metal-Insulator Phase Transition in VO2 Thin Films, L. WANG, C. CLAVERO, K. YANG, E. RADUE, M.T. SIMONS, I. NOVIKOVA, R.A. LUKASZEW, College of William and Mary TF+AS+SS-ThA9 Growth, Microstructure and Optical Properties of SputterDeposited Gallium Oxide Thin Films, S.K. SAMALA, C.V. RAMANA, The University of Texas at El Paso
Paderborn, Germany
5:00 pm
The Critical Marangoni Number Dependence with Different Aspect Ratio Comparing Microgravity Experiments and Numerical Simulation, S. YODA, ISAS, Japan, S. MATSUMOTO, IASA, Japan, H. KAWASAKI, I.
SS-ThA10
Optical and Structural Properties of Hafnium Oxide Thin Films Prepared Using Different Deposition Techniques, L. SUN, N.R. TF+AS+SS-ThA10
MURPHY, J.T. GRANT, J.G. JONES, R. JAKUBIAK, Air Force Research Laboratory
UENO, Tokyo University of Science, Japan
5:20 pm
Nitrogen Induced Changes in the Structure and Electronic Properties of WO3 Thin Films, C.V. RAMANA, R.S. VEMURI, The TF+AS+SS-ThA11
University of Texas at El Paso, M. ENGELHARD, S. THEVUTHASAN, Pacific Northwest National Laboratory
5:40 pm
171 * Paul Holloway Award Winner
Thursday Afternoon, November 1, 2012 Thin Film Room: 10 - Session TF+EM+SS-ThA Applications of Self-Assembled Monolayers and Layer-byLayer Assemblies Moderator: M.R. Linford, Brigham Young University 2:00 pm
TF+EM+SS-ThA1 Invited
Light-Directed Nanosynthesis: Near-Field Optical Approaches to Integration of the Top-Down and Bottom-Up Fabrication Paradigms, G.J. LEGGETT, University of Sheffield, UK
2:20 pm
Invited talk continued.
2:40 pm
TF+EM+SS-ThA3 Molecular Layer Deposition (MLD) of Polymer Multiple Quantum Dots on TiO2, T. YOSHIMURA, S. ISHII, Tokyo University of Technology, Japan
3:00 pm
TF+EM+SS-ThA4 Thiol-yne Click Chemistry: Old Concept & New Applications in Surface Science, N.S. BHAIRAMADGI, H. ZUILHOF, Wageningen University, Netherlands
3:20 pm
BREAK
3:40 pm
TF+EM+SS-ThA6 Attachment of Conjugated Diruthenium Alkynyl Compounds by Click Chemistry, S. POOKPANRATANA, National Institute of Standards and Technology, S.P. CUMMINGS, T. REN, Purdue University, C.A. RICHTER, C.A. HACKER, National Institute of Standards and Technology
4:00 pm
TF+EM+SS-ThA7 Vapor Phase Surface Functionalization using Hybrid SAMs / ALD Heterostructures, L. LECORDIER, M.J. DALBERTH, G. SUNDARAM, J.S. BECKER, Cambridge Nanotech, Inc.
4:20 pm
TF+EM+SS-ThA8 Chemically and Mechanically Stable Hydrophobic Thin Films Prepared by Combination of Layer-By-Layer Approach and Thiolene Chemistry, N. MADAAN, J.A. TUSCANO, N.R. ROMRIELL, M.R. LINFORD, Brigham Young University
4:40 pm
TF+EM+SS-ThA9 A Detailed Investigation of the Conditions for Monolayer Deposition from Silane Precursors, J. KNAUF, Advanced Molecular Films GmbH / RWTH Aachen University, Germany, L. REDDEMANN, Advanced Molecular Films GmbH / Universität zu Köln, Germany, A. BÖKER, RWTH Aachen University, Germany, K. REIHS, Advanced Molecular Films GmbH, Germany
5:00 pm
TF+EM+SS-ThA10 Self Limiting Behavior in the Directed Self-Assembly of Mounds on Patterned GaAs(001), C.-F. LIN, University of Maryland, C.J.K. RICHARDSON, Laboratory for Physical Science, H.-C. KAN, University of Maryland, N.C. BARTELT, Sandia National Laboratories, R.J. PHANEUF, University of Maryland
5:20 pm
TF+EM+SS-ThA11 Characterization of Fully Functional Spray-on Antibody Thin Film, J.J. FIGUEROA, S. MAGANA, D. LIM, R. SCHLAF, University of South Florida
5:40 pm
172
Anticipated Schedule Thursday Morning, November 1, 2012 TIME
SESSION
ROOM
8:00 am
______________________________________________________________________________________________________________________________________________
8:20 am
______________________________________________________________________________________________________________________________________________
8:40 am
______________________________________________________________________________________________________________________________________________
9:00 am
______________________________________________________________________________________________________________________________________________
9:20 am
______________________________________________________________________________________________________________________________________________
9:40 am
______________________________________________________________________________________________________________________________________________
10:00 am
______________________________________________________________________________________________________________________________________________
10:20 am
______________________________________________________________________________________________________________________________________________
10:40 am
______________________________________________________________________________________________________________________________________________
11:00 am
______________________________________________________________________________________________________________________________________________
11:20 am
______________________________________________________________________________________________________________________________________________
11:40 am
______________________________________________________________________________________________________________________________________________
12:00 pm
______________________________________________________________________________________________________________________________________________
Lunch when
______________________________________________________________________________________________________________________________________________
with
______________________________________________________________________________________________________________________________________________
where
______________________________________________________________________________________________________________________________________________
Anticipated Schedule Thursday Afternoon, November 1, 2012 TIME
SESSION
ROOM
1:00 pm
______________________________________________________________________________________________________________________________________________
1:20 pm
______________________________________________________________________________________________________________________________________________
1:40 pm
______________________________________________________________________________________________________________________________________________
2:00 pm
______________________________________________________________________________________________________________________________________________
2:20 pm
______________________________________________________________________________________________________________________________________________
2:40 pm
______________________________________________________________________________________________________________________________________________
3:00 pm
______________________________________________________________________________________________________________________________________________
3:20 pm
______________________________________________________________________________________________________________________________________________
3:40 pm
______________________________________________________________________________________________________________________________________________
4:00 pm
______________________________________________________________________________________________________________________________________________
4:20 pm
______________________________________________________________________________________________________________________________________________
4:40 pm
______________________________________________________________________________________________________________________________________________
5:00 pm
______________________________________________________________________________________________________________________________________________
173
NOTES
174
Thursday Afternoon Poster Sessions Electronic Materials and Processing Room: Central Hall - Session EM-ThP
Energy Frontiers Focus Topic Room: Central Hall - Session EN-ThP
Electronic Materials and Processing Poster Session 6:00 pm
Energy Frontiers Poster Session 6:00 pm
EM-ThP1 Proton Irradiation of Lattice Matched InAlN/GaN High Electron Mobility Transistors, C.-F. LO, L. LIU, T.S. KANG, F. REN, University of Florida, C.
EN-ThP1
SCHWARTZ, E. FLITSIYAN, L. CHERNYAK, University of Central Florida, H.-Y. KIM, J. KIM, Korea University, Republic of Korea, O. LABOUTIN, Y. CAO, J.W. JOHNSON, Kopin Corporation, P. FRENZER, S.J. PEARTON, University of Florida EM-ThP2 Effects of 2MeV Ge+ Irradiation on AlGaN/GaN HEMTs, E.A. DOUGLAS, P. FRENZER, S.J. PEARTON, C.-F. LO, L. LIU, T.S. KANG, F. REN, University of Florida, E. BIELEJEC, Sandia National Laboratories
Influence of AlInN Buffer Layer Thickness on the Properties of GaN Films on Si(111) Substrate using RF Metal-Organic Molecular Beam Epitaxy, EM-ThP3
W.C. CHEN, C.T. LEE, C.-N. HSIAO, Instrument Technology Research Center, National Applied Research Laboratories, Taiwan
Tungsten Carbide: Synthesis and Reactivity with Oxygen on the Nanoscale, J.B. MCCLIMON, P. REINKE, University of Virginia EN-ThP2 F-doped ZnO Thin Films Deposited by Pulse DC Magnetron Sputtering of Zinc Target, B.-H. LIAO, Instrument Technology Research Center, Taiwan, Republic of China EN-ThP3 Photoresponse of PbS Nanoparticle - Quaterthiophene Films Prepared by Gaseous Deposition as Probed by XPS, M. MAJESKI, D. PLETICHA, I.
BOLOTIN, L. HANLEY, University of Illinois at Chicago, E. YILMAZ, S. SUZER, Bilkent University, Turkey
The Investigation of the Shunt Resistance using Conductive AFM and EL Measurements in Si Based Thin Film Solar Cells, M.H. JOO, J.M. LEE, K.H.
EN-ThP4
PARK, LG Electronics Advanced Research Institute, Republic of Korea
Morpholigical Study of GaN Films Grown Under ALD Process Conditions as Well as Both Over- and Under- Saturated Growth Conditions, EM-ThP4
EN-ThP5 Growth Methods and Applications of SiC Nanopowder and Nanowhiskers, R. DHIMAN, University of Southern Denmark, E. JOHNSON, University of
J.C. REVELLI, T.J. ANDERSON, University of Florida
Structural, Compositional, and Thermal Stability Studies on In1-xGaxN Epilayers, A. ACHARYA, Georgia State University, M. BUEGLER, Technical University of Berlin, EM-ThP5
Germany, S.D. GAMAGE, N. DIETZ, B. THOMS, Georgia State University EM-ThP6 The Influence of the Group V/III Molar Precursor Ratio on the Structural and Optoelectrical Properties of InN Epilayers Grown by HighPressure CVD, R. ATALAY, Georgia State University, M. BUEGLER, Technische Universität Berlin, Germany, S.D. GAMAGE, M.K.I. SENEVIRATHNA, Georgia State University, G. DURKAYA, University of California Irvine, L. SU, UNC Charlotte, A.G.U. PERERA, Georgia State University, I. FERGUSON, UNC Charlotte, N. DIETZ, Georgia State University EM-ThP7 Protoype of Junctionless Transistor on SOI Wafers using Focused Ion Beam Milling, L. PETERSEN BARBOSA LIMA, J. ALEXANDRE DINIZ, I. DOI, J. GODOY FILHO, State University of Campinas, Brazil, H. IVANOV BOUDINOV, University of Rio Grande Do Sul, Brazil
Simulation of Millisecond Laser Anneal on SOI: A Study of Dopant Activation and Mobility and its Application to Scaled FinFET Thermal Processing, T. MICHALAK, J. HERMAN, M. RODGERS, D. FRANÇA, C. BORST, University at EM-ThP8
Copenhagen, Denmark, P.K. KRISTENSEN, Aalborg University, Denmark, P. MORGEN, University of Southern Denmark EN-ThP6 Epitaxial Growth of ZnInON Films for Piezo-Electric-Field Effect MQW Solar Cells, K. MATSUSHIMA, Kyushu University, Japan EN-ThP7 Texture-Etched Surface Structure Control of Transparent Conductive Impurity-Doped ZnO Films Deposited by r.f. Power Superimposed d.c. Magnetron Sputtering, T. MINAMI, T. FUJITA, T. MIYATA, J. NOMOTO, Kanazawa Institute of Technology, Japan EN-ThP8 Thermoelectric Properties of SbI3 Doped Bi2Te3+Bi2Se3 Alloys by Mechanical Alloying and Spark Plasma Sintering, M. BABU, S.J. HONG, Kongju National University, Republic of Korea
Structure-to-Function Relationship in Porous Pt/TiO2/Ti Planar Nanostructures with a Potential Barrier for Chemicurrent Related Applications,
EN-ThP9
S. DASARI, M. ARIYAN, M. HASHEMIAN, E. KARPOV, University of Illinois at Chicago
Investigation of the Molecular Interaction between CdSe Quantum Dots and P3HT for Hybrid Solar Cell Applications, A.S. KARAKOTI, P.
EN-ThP10
Albany-SUNY
NACHIMUTHU, S. THEVUTHASAN, Pacific Northwest National Laboratory
EM-ThP9 Equivalent-Circuit Model for Vacuum Ultraviolet Irradiation of Dielectric Films, H. SINHA, J.L. SHOHET, University of Wisconsin-Madison EM-ThP10 Surface Photoconductivity of SiO2 and SiCOH Induced by Vacuum Ultraviolet Radiation, H. ZHENG, M.T. NICHOLS, D. PEI, University of Wisconsin-Madison,
EN-ThP11
Low-Damage Deposition of Thin Silicon Films for Solar Panel Production using Surface-Wave Plasma Source, J. PECK, University of Illinois at
G.A. ANTONELLI, Novellus Systems, Inc., Y. NISHI, Stanford University, J.L. SHOHET, University of Wisconsin-Madison EM-ThP11 Spatial Volume Charge Distribution Measurement in Thin Dielectric Films: Electro-Acoustic Method, D. PEI, M.T. NICHOLS, University of Wisconsin-Madison, Y. SHKEL, Commet LLC, Y. NISHI, Stanford University, J.L. SHOHET, University of WisconsinMadison
Urbana Champaign, P. ZONOOZ, Starfire Industries LLC and University of Illinois at Urbana Champaign, D. CURRELI, University of Illinois at Urbana Champaign, M. REILLY, R. STUBBERS, B. JURCZYK, Starfire Industries, LLC, D.N. RUZIC, University of Illinois at Urbana Champaign
Relationship Between Interface Microstructures and Obtainable Photovoltaic Properties in ZnO/Cu2O Heterojunction Solar Cells, Y. NISHI, S.
EN-ThP12
ABE, T. MIYATA, T. MINAMI, N. IKENAGA, O. UEDA, Kanazawa Institute of Technology, Japan EN-ThP13 Sensory Characteristics of Zig-Zag (6,0) BN and SiC Nanotubes: AbInitio Calculation, S. OZKIRAC, B. KUTLU, S. ALIALY, M. INCEBACAK, Gazi University, Turkey
Investigation of Photoluminescent Characteristics and Structural Properties of Thin Film Zinc Silicate Doped with Manganese, K.H. YOON, J.H. EM-ThP12
KIM, Chungbuk National University (CBNU), Republic of Korea EM-ThP13 The Electrical and Thermal Properties of Nanoscale Multilayered Bi2Te3/Sb2Te3 and Bi2Te3/Bi2Te3-xSexThin Films, M. HINES, Z. XIAO, Alabama A&M University
Mapping the Magnetic Detection Properties of Chip-Scale Optically Pumped Magnetometers, N. PTSCHELINZEW, P.H. HOLLOWAY, M.R. DAVIDSON,
EM-ThP14
University of Florida EM-ThP15 Characterization of ZnO/CuO Nanolaminate Materials, S.T. KING, L. BILKE, B. OLESON, J. KRUEGER, E. TENNYSON, University of Wisconsin - La Crosse EM-ThP16 Small-Molecule Scaffolds for Directed Self-Assembly, P.L. MANCHENOPOSSO, A.J. MUSCAT, University of Arizona
175
Thursday Afternoon Poster Sessions Electron Transport at the Nanoscale Focus Topic Room: Central Hall - Session ET-ThP
Graphene and Related Materials Focus Topic Room: Central Hall - Session GR-ThP
Electron Transport at the Nanoscale Poster Session 6:00 pm
Graphene and Related Materials Poster Session 6:00 pm
ET-ThP1
The Performance of Organic Light-Emitting Diodes with Rb2CO3doped Alq3Layer for Improving Carrier-Injecting Probability, J.W. PARK, J.T. LIM,
GR-ThP1 Using Raman Spectroscopy and X-ray Photoelectron Spectroscopy to Guide the Development of Graphene-Based Materials, T.S. NUNNEY, M.H.
J.S. OH, G.Y. YEOM, Sungkyunkwan University, Republic of Korea
WALL, Thermo Fisher Scientific, UK GR-ThP2 Ionic Strength Effects on Graphene Oxide Nanosheets and Flurescence Quenching of ssDNA Aptamers, M.Y. LIN, Y.P. LU, National Applied Research Laboratories, Taiwan, Republic of China GR-ThP3 Isotope Effect in the Graphene Deuteration Kinetics, A. NEFEDOV, Karlsruhe Institute of Technology, Germany, A. PARIS, Interdisciplinary Laboratory for Computational Science, FBK-CMM, Italy, N. VERBITSKY, Moscow State University, Russia, Y. WANG, Nagoya University, Japan, A. FEDOROV, D. HABERER, IFW Dresden, Germany, M. OEHZELT, Helmholtz-Zentrum Berlin für Materialien und Energie, Germany, L. PETACCIA, Elletra Synchrotron Light Laboratory, Italy, D. USACHOV, St. Petersburg State University, Russia, D. VYALIKH, Technical University Dresden, Germany, H. SACHDEV, Max-Planck-Institute for Polymer Research, Germany, CH. WÖLL, Karlsruhe Institute of Technology, Germany, M. KNUPFER, B. BUECHNER, IFW Dresden, Germany, L. CALLIARI, Interdisciplinary Laboratory for Computational Science, FBK-CMM, Italy, L. YASHINA, Moscow State University, Russia, S. IRLE, Nagoya University, Japan, A. GRUENEIS, University of Vienna, Austria GR-ThP4 Graphene Nanoribbons Electronic Structure Modulations, N.B. LE, L.M. WOODS, University of South Florida GR-ThP5 Effects of an Interfacial Water Layer on Protein Adsorption to Graphene Sheets on Solid Substrates, K. YAMAZAKI, T. OGINO, Yokohama National University, Japan GR-ThP6 Layer Dependent Growth of Pentacene on Epitaxial Graphene, W. JUNG, D.-H. OH, J. LEE, B.G. SHIN, C.-Y. PARK, J.R. AHN, Sungkyunkwan University, Republic of Korea GR-ThP7 Optical Properties and Surface Radicals Content of Graphene Decorated with Metal Nanoparticles, M.A. BRATESCU, T. UENO, O. TAKAI, N. SAITO, Nagoya University, Japan GR-ThP8 Electronic Structure of MoS2 Monolayers on Copper, Q. MA, D.Z. SUN, W.H. LU, University of California Riverside, D. LE, M. AMANPOUR, University of Central Florida, J. MANN, S. BOBEK, University of California Riverside, T. RAMAN, University of Central Florida, L. BARTELS, University of California Riverside GR-ThP9 Dry Transfer of Graphene to Organic and Inorganic Substrates, E.H. LOCK, S. HERNANDEZ, S.G. WALTON, M. LASKOSKI, S.P. MULVANEY, P.E. SHEEHAN, W.K. LEE, T.J. ANDERSON, F.J. BEZAREZ, V.D. WHEELER, F.J. KUB, J.D. CALDWELL, K.D. HOBART, B.N. FEYGELSON, L.O. NYAKITI, R.L. MYERS-WARD, C.R. EDDY, JR., D.K. GASKILL, Naval Research Laboratory
Controllable Assembly of Aromatic Molecules on a Surface via DielsAlder Reaction: A Carbon Source for Graphene, C.L. HENDERSON, J. BALTAZAR, H.
GR-ThP10
SOJOUDI, J. KOWALIK, S. GRAHAM, L. TOLBERT, Georgia Institute of Technology GR-ThP11 Unique Electronic Mixing between Iron Phthalocyanine and Graphene*, D.B. DOUGHERTY, A.A. SANDIN, North Carolina State University, A. CALZOLARI, CNR-NANO, Istituto Nanoscienze, Italy, M. BUONGIORNO-NARDELLI, North Carolina State University, A. AL-MAHBOOB, J.T. SADOWSKI, Brookhaven National Laboratory, J.E. ROWE, North Carolina State University
Half-Metallicity in Transition Metal Embedded Two Dimensional Graphyne, L.D. PAN, S.X. DU, Chinese Academy of Sciences, China, W.A. HOFER, University of
GR-ThP12
Liverpool, UK, H.-J. GAO, Chinese Academy of Sciences, China
176
Thursday Afternoon Poster Sessions Helium Ion Microscopy Focus Topic Room: Central Hall - Session HI-ThP
Magnetic Interfaces and Nanostructures Room: Central Hall - Session MI-ThP
Aspects of Helium Ion Microscopy Poster Session 6:00 pm
Magnetic Interfaces and Nanostructures Poster Session 6:00 pm
HI-ThP1 Fabrication of Carbon Nanomembranes by Helium Ion Lithography, X. ZHANG, H. VIEKER, A. BEYER, A. GÖLZHÄUSER, University of Bielefeld, Germany
MI-ThP1
HI-ThP2 Site Specific He Ion Irradiation Damage Studies in Nanolayerd Thin Films, V. SHUTTHANANDAN, A. DEVARAJ, R.S. VEMURI, C.M. WANG, T. VARGA, C.H. HENAGER JR, S. THEVUTHASAN, Pacific Northwest National Laboratory
Science (KRISS), G.-E. YANG, Chungnam National University, Korea, C. HWANG, Korea Research Institute of Standards and Science (KRISS), E. CHO, Chungnam National University, Korea
HI-ThP3 Helium and Neon Ion Beams Induced Platinum Deposition, H. WU, D. FERRANTI, D. XIA, W. THOMPSON, L.A. STERN, Carl Zeiss, P.D. RACK, C.M. GONZALEZ, The University of Tennessee, M.W. PHANEUF, Fibics Incorporated
Magnetic Properties of Ferromagnetic-Antiferromagnetic Bi-Layers with Different Spin Configuration, W. KIM, Korea Research Institute of Standards and MI-ThP2 Spin Dynamics and Exchange Bias in Core-Shell Fe\γ-Fe2O3 Nanoparticles, S. CHANDRA, H. KHURSHID, University of South Florida, W. LI, G.C.
HADJIPANAYIS, University of Delaware, M.H. PHAN, H. SRIKANTH, University of South Florida MI-ThP3 Ultra Low Power Neuromorphic Hardware Using Spin Based Devices, M. SHARAD, K. ROY, Purdue University MI-ThP4 Modeling-assisted Synthesis and Characterization of Epitaxial NiTiO3 Films as New Multiferroics, T. VARGA, T.C. DROUBAY, M.E. BOWDEN, S.A. CHAMBERS, B.C. KABIUS, E. APRA, W.A. SHELTON, V. SHUTTHANANDAN, Pacific Northwest National Laboratory MI-ThP5 Nanomechanical Manipulation of the Anomalous Hall Effect in GaMnAs, J.H. LEE, M.L. CHO, Y.D. PARK, Seoul National University, Republic of Korea
177
Thursday Afternoon Poster Sessions Nanometer-scale Science and Technology Room: Central Hall - Session NS-ThP
Plasma Science and Technology Room: Central Hall - Session PS-ThP
Nanometer-scale Science and Technology Poster Session 6:00 pm
Plasma Science and Technology Poster Session 6:00 pm
NS-ThP1
Composites of Silicone Nanofilaments and TiO2 Nanoparticles for Photocatalysis, G.R. MESECK, R. KONTIC, G.R. PATZKE, S. SEEGER, University of Zurich,
PS-ThP1 Plasma Etch Challenges to Produce Metallization-Friendly Profiles at 20nm and Beyond Technology Nodes in the BEOL, Y. MIGNOT, STMicroelectronics,
Switzerland
R. KOSHY, GLOBALFOUNDRIES, Y. PARK, Samsung Electronics Co. Ltd., R. SRIVASTAVA, GLOBALFOUNDRIES, E. SODA, Renesas Electronics, Y. YIN, M. BEARD, B.G. MORRIS, IBM Microelectronics, K. TREVINO, GLOBALFOUNDRIES, J. ARNOLD, S. ALLEN, IBM Microelectronics, C. LABELLE, GLOBALFOUNDRIES, M. SANKARAPANDIAN, IBM Microelectronics, Y. LOQUET, STMicroelectronics, Y. FEURPRIER, L. WANG, J. STILLAHN, Y. CHIBA, V. GIZZO, K. KUMAR, Tokyo Electron Technology Center, America, LLC, C.A. WANG, Q. ZHANG, GLOBALFOUNDRIES, A. INADA, Renesas Electronics, S. MIGNOT, STMicroelectronics
NS-ThP2 Organic Vapor Adsorption on In Situ Grown Carbon Nanotube Films, K. BOSNICK, S. BAN, W.K. HIEBERT, Z. SHI, C. HUANG, R. LISTER, M. MLECZKO, National Research Council of Canada
Integrated Ultra-High Vacuum Tip-Enhanced Raman Spectroscopy with Molecular-Resolution Microscopy of Large Polyatomic Molecular Adsorbates on Single Crystal Surfaces, N. JIANG, E.T. FOLEY, J.M. KLINGSPORN,
NS-ThP3
A Comparative Study of Plasma-Treated Fluoropolymers at Atmospheric Pressure, T. DUFOUR, J. HUBERT, N. VANDENCASTEELE, F. RENIERS,
M.D. SONNTAG, M.C. HERSAM, R.P. VAN DUYNE, Northwestern University
PS-ThP2
An New One-step Synthesis Method for Generating Nanocarbonsupported Metal Nanoparticle, J. KANG, L. LI, N. ZETTSU, O. TAKAI, N. SAITO, Nagoya
Université Libre de Bruxelles, Belgium
NS-ThP4
University, Japan NS-ThP5 The Role of an Amorphous Carbon Layer on a Multi-Wall Carbon Nanotube Attached Atomic Force Microscope Tip in Making Good Electrical Contact to a Gold Electrode, S.J. AHN, KRISS, Republic of Korea NS-ThP6 Passivation Effects on Electrical Properties of SnO2 Nanowires FET Treated by Nitrogen Plasma, Y.H. CHOI, P.S. KANG, J.H. NA, J.S. KIM, Korea University, Republic of Korea, S.-H. CHOI, Korea Institute of Science and Technology, Republic of Korea, M.Y. YOU, G.T. KIM, Korea University, Republic of Korea NS-ThP7 Application of Rolling Circle Amplification and Thermal Dynamic Principle for Manipulating the Interparticle Spacing of Gold Nanopaticle Chains, Y.P. LU, M.Y. LIN, Y.-C. OU, National Applied Research Laboratories, Taiwan, Republic of China
Synthesis of Gold Nanofluids for Improved Heat Transfer using Solution Plasma, Y.K. HEO, M.A. BRATESCU, N. SAITO, Nagoya University, Japan NS-ThP9 Post Ion-Implant Growth of Epitaxial Graphene on 6H-SiC, J. SEO, H.
NS-ThP8
SHIN, J.-H. PARK, J.R. AHN, Sungkyunkwan University, Republic of Korea
Preparation of Metal Nanoparticles within Mesoporous Silica via Solution Plasma Process (SPP), W. YAOWARAT, N. SAITO, Nagoya University, Japan NS-ThP12 The Electrical Property of the Interface Between Dielectrophoresis (DEP)-Aligned Single-Walled Carbon Nanotubes and Semiconductors, M.
NS-ThP11
HINES, Z. XIAO, Alabama A&M University
Effect of Interface Spacing on Radiation Damage Tolerance of Metallic Nanolaminates, R.S. VEMURI, A. DEVARAJ, T. VARGA, V. SHUTTHANANDAN,
NS-ThP13
C.M. WANG, S. THEVUTHASAN, C.H. HENAGER, Pacific Northwest National Laboratory, C.V. RAMANA, University of Texas at El Paso
Field Emission Based Hydrogen Sensing Characteristics from Carbon Nanotubes Synthesized on Catalytical Substrates, C. DONG, Wenzhou
PS-ThP3 Advances in 2D/3D Feature Profile Simulations, P. MOROZ, Tokyo Electron US Holdings Ltd PS-ThP4 Laser Thomson Scattering Measurements of Plasma Parameters in the Low Temperature Plasmas, J.-H. KIM, Korea Reseach Institute of Standards and Science, Republic of Korea, B.H. SEO, Korea Advanced Institute of Science and Technology, Republic of Korea, S.-J. YOU, D.J. SEONG, Korea Reseach Institute of Standards and Science, Republic of Korea PS-ThP5 Development of a New Plasma Treatment Followed by a Bake for Photoresist Linewidth Roughness Smoothening, M. FOUCHIER, E. PARGON, CNRS/UJF-Grenoble1/CEA LTM, France, L. AZARNOUCHE, ST Microelectronics, France, K. MENGUELTI, M. BRIHOUM, CNRS/UJF-Grenoble1/CEA LTM, France PS-ThP6 Analysis of Target Oxidation in Reactive Sputter Deposition Processes of Silicon Dioxide, K. HOSHINO, K. DEMURA, S. TAMAYA, M. OKAMOTO, Y. MURAKAMI, Canon Inc, Japan, M. ISOBE, T. ITO, K. KARAHASHI, S. HAMAGUCHI, Osaka University, Japan PS-ThP7 On the Origin of the Line Width Roughness of Photoresist Patterns after Plasma Exposure, R. RAMOS, M. BRIHOUM, K. MENGUELTI, L. AZARNOUCHE, M. FOUCHIER, E. PARGON, G. CUNGE, O. JOUBERT, LTM (CNRS / UJF-Grenoble1 / CEA), France PS-ThP8 Effect of Film Properties on Nitride Etching, T. WANIFUCHI, G. TAKABA, H. OHTAKE, M. SASAKI, Tokyo Electron Technology Development Institute, INC., Japan PS-ThP9 A DC-RF Magnetized Plasma Source, Y. RAITSES, I.D. KAGANOVICH, Princeton Plasma Physics Laboratory PS-ThP10 Quick Estimation of Deposition Rate for a Sputter System, G. DING, Y. WANG, J. CHENG, D. SCHWEIGERT, Z. SUN, M. LE, Intermolecular Inc. PS-ThP11 Chemical Modification of Polystyrene through S, SC and SH Ionbeam, K. CHOUDHARY, University of Florida, T. KEMPER, Georgia Institute of Technology, S.B.
NS-ThP14
SINNOTT, University of Florida
University, Republic of China
PS-ThP12
Application of E-beam Curing Technique to EUV Resist Utilizing DC Superimposed Capacitively-Coupled Plasma, M. HONDA, T. KATSUNUMA, K. NARISHIGE, Tokyo Electron Miyagi Ltd., Japan, K. YATSUDA, Tokyo Electron Limited, Japan
SiH4/H2 and CH4 Multi-Hollow Discharge Plasma CVD of SiC NanoComposite Anode for High Charge-Discharge Capacity Lithium Ion Batteries,
PS-ThP13
Y. MORITA, Kyushu University, Japan PS-ThP14 Interface Trap Generation by VUV/UV Radiation from Fluorocarbon Plasma, M. FUKASAWA, Sony Corporation, Japan, Y. MIYAWAKI, Y. KONDO, K. TAKEDA, H. KONDO, K. ISHIKAWA, M. SEKINE, Nagoya University, Japan, H. MATSUGAI, T. HONDA, M. MINAMI, F. UESAWA, Sony Corporation, Japan, M. HORI, Nagoya University, Japan, T. TATSUMI, Sony Corporation, Japan PS-ThP15 Design of a Standalone Plasma Diagnostics Box, F.T. MOLKENBOER, H.H.P.TH. BEKMAN, F.H. ELFERINK, T.J. VERSLOOT, E. TE SLIGTE, N.B. KOSTER, TNO Technical Sciences, The Netherlands PS-ThP16 Line Edge Roughness Improvement in Hard-Mask Open Etch using Capacitively Coupled Plasma, A. KO, A. RANJAN, T. ENOMOTO, C. COLE, A. METZ, D. HETZER, K. KUMAR, S. DUNN, P. BIOLSI, Tokyo Electron Technology Center, America, LLC, L. CHEN, J. ZHAO, Tokyo Electron America PS-ThP17 Active Control of Electron Energy Distribution Function in dc Discharge using an Auxiliary Electrode, I. SCHWEIGERT, Institute of Theoretical and Applied Mechanics, V. DEMIDOV, West Virginia University, I.D. KAGANOVICH, Princeton Plasma Physics Laboratory PS-ThP18 A New Compact ICP Source for Neutral and Ion Beam Extraction, E. KARAKAS, V.M. DONNELLY, D.J. ECONOMOU, University of Houston
The Role of Ions in the Gas-Surface Interactions of Nitrogen Oxide Plasma Systems, J.M. BLECHLE, M.F. CUDDY, E.R. FISHER, Colorado State University
PS-ThP19
178
Thursday Afternoon Poster Sessions PS-ThP20
Detailed Analysis of Si Substrate Damage Induced by HBr/O2- and H2-Plasma Etching and the Recovery Process Designs, Y. NAKAKUBO, A.
PS-ThP41
An Experimental Study on Large-Area Multiple ICP & Helicon Source for Oxidation in Semiconductor Process, J.-W. LEE, Korea Advanced Institute of Science
MATSUDA, Kyoto University, Japan, M. FUKASAWA, Sony Corporation, Japan, Y. TAKAO, Kyoto University, Japan, T. TATSUMI, Sony Corporation, Japan, K. ERIGUCHI, K. ONO, Kyoto University, Japan
and Technology, Republic of Korea, S.-H. AN, Agency for Defense Development, Republic of Korea, H.-Y. CHANG, Korea Advanced Institute of Science and Technology, Republic of Korea
Diagnosing Toroidally Confined Pure Electron Plasma using Electrostatic Waves, S.A. EXARHOS, M.R. STONEKING, J.W. DARRELL, Lawrence PS-ThP21
PS-ThP42 Development of DC Plasma Source with Low Electron Density under Very Low Pressure, B.-K. NA, I.-S. BAE, Korea Advanced Institute of Science and Technology, Republic of Korea, S.-J. YOU, J.-H. KIM, Korea Reseach Institute of Standards and Science, Republic of Korea, H.-Y. CHANG, Korea Advanced Institute of Science and Technology, Republic of Korea
University
Diagnostic Studies of Ar/c-C4F8 Plasmas: The Effect of N2-addition on Gas Phase and Surface Kinetics, P.K. KAO, Y.J. YANG, National Taiwan University,
PS-ThP22
PS-ThP43 Atomic Layer Etching of Ultra-thin High-k Dielectric Film for Gate Oxide in MOSFET Devices, C.K. KIM, Sungkyunkwan University, Republic of Korea, J.K.
Taiwan, Republic of China, P.W. CHIOU, C.C. CHOU, Tokyo Electron Taiwan Limited, Taiwan, Republic of China, C.C. HSU, National Taiwan University, Taiwan, Republic of China
Advanced Etch Profile Control and the Impact of Sidewall Angle at SiC Etch for Metal Filling Process, H.K. SUNG, W.S. LIM, K.W. LEE, S.K. KIM, J.W. CHOI, PS-ThP23
B.O. LEE, H.M. YOON, Y.S. LEE, M.L. PARK, E.A. CHO, J.K. KIM, H.K. KANG, C.G. KO, Korea Advanced Nano Fab Center, Republic of Korea PS-ThP24 Etching Characteristics of Magnetic Tunnel Junction Layer by using Non-Corrossive Gas Mixtures in ICP System, M.H. JEON, K.N. KIM, H.J. KIM, G.Y. YEOM, Sungkyunkwan University, Republic of Korea
KIM, Samsung Electronics Co. Ltd., Republic of Korea, G.Y. YEOM, Sungkyunkwan University, Republic of Korea PS-ThP44 Study on the Plasma Damage on the Interface between the Titanium Nitride and Hafnium Oxide during Etching Carbon Mask on the Titanium Nitride, K.H. BAI, Y. JEON, M.C. KIM, S. CHOI, Samsung Electronics Co. Ltd., Republic of Korea PS-ThP45 Experimental and Simulation Studies of Capacitively Coupled SilanHydrogen Plasmas for Deposition of m-C Si Film, C.-H. FAN, S.-E. LIEN, K.-C. LEOU,
PS-ThP25
National Tsing Hua University, Taiwan, Republic of China, C.-H. HSIEH, M.-C. WANG, C.-F. AI, Institute of Nuclear Energy Research, Taiwan, Republic of China
TAJIMA, T. HAYASHI, K. ISHIKAWA, M. SEKINE, M. HORI, Nagoya University, Japan
PS-ThP46 Diagnostic Study of Plasmas in Solution Driven by Pulsed Power Study of History Effect and Observation of S2 Emission, C.Y. SIE, C.C. HSU,
Evaluation of Surface Chemical Bonding State and Surface Roughness of Chemical Dry Etched Si using NO and F2 Gas Mixture, S. PS-ThP26 High K Metal Gate Etching towards sub 14 nm Features, S. BARNOLA, L. DESVOIVRES, C. VIZIOZ, CEA, LETI, MINATEC Campus, France, C. ARVET, ST Microelectronics, Crolles, France
National Taiwan University, Taiwan, Republic of China
PS-ThP27 The SiOx Thin Film Deposition by using a Double Discharge System with a HMDS/Ar/He/O2 Gas Composition, G.Y. KIM, J.B. PARK, G.Y. YEOM, Sungkyunkwan University, Republic of Korea PS-ThP28 The Effect of a Low Plasma-Induced Damage Etching on sub-32nm Metal Gate/High-k Dielectric CMOSFETs Characteristics, K.S. MIN, S.H. KANG, G.Y. YEOM, Sungkyunkwan University, Republic of Korea
Catalytic Activities of Metal/Carbon Compound used by Vacuum and Solution Plasma Processes, H.S. LEE, M.A. BRATESCU, N. SAITO, Nagoya University,
PS-ThP29 Japan
Dry Etching Characteristics of ITO Thin Films for Transparent Electrodes, H.S. KIM, J.C. WOO, Y.H. JOO, L. CHEN, K.R. CHOI, Y.S. CHUN, C.I. KIM, Chung-
PS-ThP30
Ang University, Republic of Korea
Plasma Etching of PTFE: Differences between Low and Atmospheric Pressure Treatments, N. VANDENCASTEELE, J. HUBERT, T. DUFOUR, S. COLLETTE, C.
PS-ThP31
DE VOS, F. RENIERS, Université Libre de Bruxelles, Belgium PS-ThP32 Surface Modification of Polyethylene Terephthalate using Water Containing He/O2 and Ar/O2 Plasma, P. LEROY, S. ABOU RICH, S. COLETTE, F. RENIERS, ULB, Belgium PS-ThP33 Numerical Investigation of Optimum Conditions for Magnetic Neutral Loop Discharge Plasma Production, S.H. KIM, D. AKBAR, J.L. SHOHET, University of Wisconsin-Madison, B.N. MOON, W.J. CHOI, Y.M. SUNG, Kyungsung University, Korea PS-ThP34 No- Residue and High- Rate Etching of InGaAs by High Density Plasma, Y. OHSAWA, Tokyo Electron Technology Center, America, LLC, H. NAKAJIMA, T. NISHIZUKA, M. TAKAHASHI, Tokyo Electron America, Y. TRICKETT, G. NAKAMURA, A. KO, Tokyo Electron Technology Center, America, LLC, H. OHTAKE, Tokyo Electron Technology Development Institute, INC., Japan, C. HUFFMAN, R. HILL, SEMATECH
Using Capillary Array Windows to Minimize Ion Bombardment Effects during Plasma Processing of Dielectrics, K.W. HSU, F.A. CHOUDHURY, H.
PS-ThP35
REN, University of Wisconsin-Madison, B.N. MOON, Kyungsung University, Korea, A.G. OLSON, University of Wisconsin-Madison, Y.M. SUNG, Kyungsung University, Korea, Y. NISHI, Stanford University, J.L. SHOHET, University of Wisconsin-Madison PS-ThP36 Deposition of YSZ Thin Films by Laser-Assisted Plasma Coating at Atmospheric Pressure (LAPCAP), Z. OUYANG, Y.L. WU, P. RAMAN, L. MENG, T.S. CHO, D.N. RUZIC, University of Illinois at Urbana Champaign
Plasma Propagation Speed and Electron Temperature in Atmospheric Pressure Non-thermal Bioplasma Jet, P. SUANPOOT, Maejo University
PS-ThP38
Phrae Campus, Thailand, Y.G. HAN, W.Y. LEE, G.S. CHO, E.H. CHOI, Kwangwoon University, Republic of Korea
Increase Film Quality and Campaign Length in Reactive Sputtering Applications With Pulsed-DC Power, D. PELLEYMOUNTER, Advanced Energy Industries
PS-ThP39 Inc.
Control of Radical/Ion Ratios in Electron Beam-Generated Plasmas and their Effect on Polymer Surface Modification, S.G. WALTON, E.H. LOCK, R.
PS-ThP40
FERNSLER, Naval Research Laboratory
179
Thursday Afternoon Poster Sessions Transparent Conductors and Printable Electronics Focus Topic Room: Central Hall - Session TC-ThP
Thin Film Room: Central Hall - Session TF-ThP
Transparent Conductors and Printable Electronics Poster Session 6:00 pm
Thin Film Poster Session 6:00 pm TF-ThP1 Vanadium Oxide Thin Films Grown by ALD using TEMAV and O3 or H2O Precursors, A. PREMKUMAR, IMEC, Belgium, M. TOELLER, Tokyo Electron Limted,
Stability Investigation of Oxide TFTs with Al-doped ZnO Channel Layers Grown by Atomic Layer Deposition, C.H. AHN, M.G. YUN, S.W. CHO, H.K.
TC-ThP1
Japan, I. RADU, Katholieke Universitiet, Leuven, Belgium, C. ADELMANN, M. SCHAEKERS, J. MEERSSCHAUT, T. CONARD, J. MALGORZATA, S. VAN ELSHOCHT, IMEC, Belgium
CHO, Sungkyunkwan University, Republic of Korea
Roles of MoO3 Layer for Charge Injection and Charge Generation in an Organic Light Emitting Diode, M. KAWAMURA, S. YOSHIDA, Y. ABE, Kitami Institute of
TF-ThP2
Ellipsometry Characterization of Thin Organic Films for Flexible Electronics, C. EYPERT, M. STCHAKOVSKY, L. YAN, Horiba Scientific TC-ThP3 Study of Optical Transparency and Electrical Resistance of Indium TiN Oxide Coatings with Variable Stoichiopmetry, J.L. AMPUERO, Universidad
TC-ThP2
Technology, Japan
Effect of Substrate Bias on Properties of Nanostructured TiZrN Thin Films Deposited by Radio Frequency Magnetron Sputtering, Y.-W. LIN, Instrument
TF-ThP3
Nacional de Ingeniería, Perú, C. BENNDORF, Hamburg University, Germany, A.F. TALLEDO, Universidad Nacional de Ingeniería, Perú
Toward Active-Matrix Lab-On-Chip: Programmable Electrofluidic Device Integrated with the Arrayed IGZO Oxide Thin Film Transistors, J.H. NOH,
TC-ThP4
J. NOH, P.D. RACK, University of Tennessee Knoxville
Technology Research Center, G.-P. YU, J.-H. HUANG, National Tsing Hua University, Taiwan, Republic of China
Effects of Preparation Conditions on the Magnetocaloric Effect of Gd Thin Films, H.F. KIRBY, D.D. BELYEA, J.T. WILLMAN, University of South Florida, C.G.
TF-ThP4
HENDRYX, Newsome High School, C.W. MILLER, University of South Florida TF-ThP5 Advanced Analytical Characterization of Multilayered Thin Films for Corrosion Inhibition, G. ZORN, M. KARADGE, GE Global Research, C.C. PIERCE, J.I. MELZER, GE Power & Water, M.M. MORRA, GE Global Research
Sputter Deposition of Atomically Smooth ZnO Films with Buffer Layers Crystallized via Nitrogen Mediation, K. KUWAHARA, Kyushu University, Japan TF-ThP7 Influence of Substrate Temperature on the Microstructure and Surface Morphology of Pulsed DC Magnetron Sputtered ZrB2 Films, C.T. LEE, W.C. CHEN, TF-ThP6
Instrument Technology Research Center, Taiwan, Republic of China
Effect of Fluorine Doping on the Structural, Optical and Electrical Properties of CdS Films Deposited by Chemical Bath Deposition, K.E. NIETO-
TF-ThP8
ZEPEDA, Cinvestav-IPN, Mexico, E. MOTA-PINEDA, ESIME-IPN, Mexico, M.A. ZAPATA-TORRES, CICATA-Legaria, IPN, Mexico, M.A. MELENDEZ-LIRA, Cinvestav-IPN, Mexico TF-ThP9 Interfacial Properties of Atomic Layer Deposited TiO2 Films on InAs (100) Surfaces, L. YE, T. GOUGOUSI, UMBC TF-ThP10 AES and XPS Characterizations in ALD ZnO Films Doped with Al and P, H. YUAN, Northwestern Polytechnical University, China, B. LUO, W.L. GLADFELTER, S.A. CAMPBELL, University of Minnesota TF-ThP11 High k Gate Dielectrics based on Titanium-Aluminum in GaAs Substrates for CMOS Technology, J. MIYOSHI, A.R. SILVA, L.P.B. LIMA, J.A. DINIZ, I. DOI, State University of Campinas, Brazil TF-ThP12 Photoluminescence and Life-Time Characterization of Polythiophene Incorporated with Dye Molecules, H. KOBE, H. KATO, A. YAMADA, S. TAKEMURA, T. HIRAMATSU, K. SHIMADA, K. MATSUI, Kanto Gakuin University, Japan TF-ThP13 Production of Miniaturized Optical Interference Filters Array for CMOS Sensor, C.-N. HSIAO, P.-K. CHIOU, H.-P. CHEN, B.-H. LIAO, Y.-W. LIN, F.-Z. CHEN, Instrument Technology Research Center, Taiwan TF-ThP14 Analysis of Thin Layers with Low Energy Ion Scattering (LEIS), B. HAGENHOFF, M. FARTMANN, D. BREITENSTEIN, Tascon GmbH, Germany, T. GREHL, ION-TOF GmbH, Germany, H.R.J. TER VEEN, Tascon GmbH, Germany
Reaction Mechanism for the Atomic Layer Deposition of Titanium Dioxide using Titanium Tetrachloride and Titanium Tetraisopropoxide as Precursors, R.P. CHAUKULKAR, S. AGARWAL, Colorado School of Mines TF-ThP16 Nitrogen Doped Zinc Oxide Thin Films Prepared by Reactive RF Magnetron Sputtering of Zinc in Nitrous Oxide Atmosphere and Postdeposition Annealing Structural and Optical Properties, L.A. HERNÁNDEZTF-ThP15
HERNÁNDEZ, ESFM-IPN, Mexico, A. HERNÁNDEZ-HERNÁNDEZ, F. DE MOURE-FLORES, J.G. QUIÑONES-GALVÁN, CINVESTAV-IPN, Mexico, J.J. ARAIZA-IBARRA, UAF-UAZ, Mexico, M. MELÉNDEZ-LIRA, CINVESTAV-IPN, Mexico TF-ThP17 Physical and Electrical Characteristic of Atomic Layer Deposition of AlxHfyOz on Silicon, Y. LIN, W. LI, S. FANZ, R. CANDLER, UCLA TF-ThP18 Wetting Properties of Silicon Incorporated DLC Films, T.G. KIM, Pusan National University, Korea
180
FRIDAY SHORT COURSES 8:30 a.m. 8:30 a.m. 8:30 a.m.
UHV Design and Practices Analysis of Mass Spectrometer (RGA) Spectra Sputter Deposition
LOCATION: COURSE HOURS:
All AVS Short Courses will be held at – Tampa Convention Center All AVS Short Course Hours: 8:30 a.m. – 5:00 p.m. – with 1.5 hour break for Lunch (lunch not included)
181
NOTES
182
Friday Morning, November 2, 2012 Applied Surface Science Room: 20 - Session AS+TF+VT-FrM Surface Analysis using Synchrotron Techniques
8:20 am
Electronic Materials and Processing Room: 14 - Session EM+NS-FrM
Moderators: A. Herrera-Gomez, UAM-Azcapotzalco and CINVESTAVQueretaro, Mexico, J.C. Woicik, National Institute of Standards and Technology AS+TF+VT-FrM1 Surface and Interface Analyses by X-ray Absorption and Hard X-ray Photoemission Spectroscopies, Q. XIAO, X. CUI, Canadian Light Source, Canada, H. PIAO, General Electric Global Research Center, Y.F. HU, Canadian Light Source, Canada, T.K. SHAM, The University of Western Ontario, Canada
8:40 am
AS+TF+VT-FrM2 Differences in the Electronic Structure Highly-Oriented Films of H2-, Fe-, Co-, and Cu-Phthalocyanines Revealed by NEXAFS Spectroscopy, T.M. WILLEY, M. BAGGE-HANSEN, J.R.I. LEE, R. CALL, L. LANDT, T.
Low-Resistance Contacts to Nanoelectronics Moderator: S. Zollner, New Mexico State University EM+NS-FrM1 Invited
Electrical Transport on Chemically Modified Silicon-on-Insulator Substrates, G.P. LOPINSKI, National Research Council of Canada
Invited talk continued.
VAN BUUREN, Lawrence Livermore National Laboratory, C. COLESNIUC, C.M. MONTON, I. SCHULLER, University of California, San Diego 9:00 am
AS+TF+VT-FrM3 Invited
Hard X-ray Photoelectron Study of Graphene/ h-BN Layer Structures Grown on Polycrystalline Cu Substrates, L. KÖVÉR, MTA ATOMKI, Hungary, L. TAPASZTÓ, Inst. Tech. Physics and Materials Sci. & Korea-Hungary Joint Lab for Nanosciences, Hungary, C. HWANG, KRISS & Korea-Hungary Joint Lab for Nanosciences, Republic of Korea, L.P. BIRÓ, Inst. Tech. Physics and Materials Sci. & Korea-Hungary Joint Lab for Nanosciences, Hungary, I. CSERNY, J. TÓTH, A. CSIK, MTA ATOMKI, Hungary, W. DRUBE, S. THIESS, Deutsches Elektronen-Synchrotron DESY, Germany
9:20 am
Invited talk continued.
Evidence for Single Electron Tunnel Junction using Gold Nanoparticles on Oxide-Free Si(111), L. CAILLARD, O. SEITZ, P. CAMPBELL,
EM+NS-FrM3
University of Texas at Dallas, O. PLUCHERY, Université Pierre et Marie Curie, France, Y.J. CHABAL, University of Texas at Dallas
EM+NS-FrM4 A Distribution of Variable Size Sn-islands on 0.8 nm Oxide/ Si (111): Local MOS Properties and Tunneling Studied with Synchrotron Radiation, A. SILVA, Universidade Nova de Lisboa, Portugal, K. PEDERSEN, Aalborg University, Denmark, Z.S. LI, Aarhus University, Denmark, P. MORGEN, University of Southern Denmark
9:40 am
AS+TF+VT-FrM5 Beyond Hard X-ray Photoelectron Spectroscopy: Simultaneous Combination with X-ray Diffraction, G.R. CASTRO, J. RUBIOZUAZO, SpLine at the European Synchrotron Radiation Facility, France
Signatures of Interface Band Structure and Parallel Momentum Conservation of Hot Electrons across Metal-Semiconductor Schottky Diodes, J. GARRAMONE, Northwestern University, J. ABEL, R. BALSANO,
EM+NS-FrM5
University at Albany-SUNY, S. BARRAZA-LOPEZ, University of Arkansas at Fayetteville, V.P. LABELLA, University at Albany-SUNY 10:00 am
AS+TF+VT-FrM6 Spectroscopic Imaging using Vector Potential Photoelectron Microscopy, R. BROWNING, R. Browning Consultants
EM+NS-FrM6 Metal-Fullerene Interfaces: A Dynamic System, P. REINKE, J.B. MCCLIMON, H. SAHALOV, University of Virginia
10:20 am
AS+TF+VT-FrM7 Trends in Synchrotron-based Photoemission; High Energy and High Pressure, H.J. BERGERSEN, J. ÅHLUND, R. MOBERG, VG
EM+NS-FrM7 Invited
Scienta, Sweden
Scaling Silicide Contacts in Microlelectronics: At What Size will Material Characteristics affect Device Poperties ?, C. LAVOIE, IBM T.J. Watson Research Center
10:40 am
Invited talk continued.
11:00 am
EM+NS-FrM9
Compositional Dependence of the Dielectric Function and Optical Conductivity of NiPt Alloy Thin Films, L.S. ABDALLAH, T. TAWALBEH,
I.V. VASILIEV, S. ZOLLNER, New Mexico State University, C. LAVOIE, IBM T.J. Watson Research Center, A. OZCAN, IBM Systems and Technology Group, M. RAYMOND, GLOBALFOUNDRIES 11:20 am
EM+NS-FrM10 Ultra-Shallow Junction Formation for sub-22nm CMOS Technology and Characterization using High-resolution SIMS, M.J.P. HOPSTAKEN, H. WILDMAN, D. PFEIFFER, IBM T.J. Watson Research Center, Z. ZHU, P. RONSHEIM, IBM Systems and Technology Group, K.K. CHAN, I. LAUER, J.S. NEWBURY, D.-G. PARK, IBM T.J. Watson Research Center
11:40 am
EM+NS-FrM11 A Deep Dive into the Liquid Fermi Sea, R.K. SCHULZE, J.C. LASHLEY, B. MIHAILA, D.C. WALLACE, Los Alamos National Laboratory
183
Friday Morning, November 2, 2012 Energy Frontiers Focus Topic Room: 15 - Session EN+SS-FrM
Electron Transport at the Nanoscale Focus Topic Room: 16 - Session ET+SS+GR+SP-FrM
Photocatalysis and Solar Fuels
Electron Transport at the Nanoscale: Development of Theories and Techniques
Moderator: N.G. Petrik, Pacific Northwest National Laboratory 8:20 am
Atomic Layer Deposition for Electronic Band Engineering of Silicon Photoelectrochemical Cells, B. KALANYAN, M.D. LOSEGO, D.H. KIM,
EN+SS-FrM1
G.N. PARSONS, North Carolina State University
8:40 am
EN+SS-FrM2 Photochemical Hole Scavenging Reactions of Methanol on TiO2: Identification of Active Species and Water Coadsorption Study, M.
Moderator: C. Su, Bruker Nano ET+SS+GR+SP-FrM1 Invited
What is Missing in the Space Charge Limited Current Theory?, X.-G. ZHANG, Oak Ridge National Laboratory, S.T. PANTELIDES, Vanderbilt University
Invited talk continued.
SHEN, M.A. HENDERSON, Pacific Northwest National Laboratory
9:00 am
EN+SS-FrM3 Nanostructured Antimony Doped Tin Oxide Enhances Photoelectrochemical Water Splitting by Supported TiO2, Q. PENG, Duke
ET+SS+GR+SP-FrM3 Mapping Solar Cell Internal Fields and Band Offsets, H. COHEN, Y. ITZHAIK, G. HODES, Weizmann Institute of Science, Israel
University, B. KALANYAN, North Carolina State University, M. ANDREW, P. HOERTZ, Research Triangle Institute, L. ALIBABAEI, University of North Carolina at Chapel Hill, J. LIU, Duke University, T.J. MEYER, University of North Carolina at Chapel Hill, G.N. PARSONS, North Carolina State University, J.T. GLASS, Duke University 9:20 am
9:40 am
10:00 am
10:20 am
EN+SS-FrM4 Plasmon-Mediated Charge Transfer in Au-TiO2 Heterostructures for Visible Light Water-Splitting, J. DUCHENE, B. SWEENY,
ET+SS+GR+SP-FrM4
University of Florida, A. JOHNSTON-PECK, D. SU, Brookhaven National Laboratory, W.D. WEI, University of Florida
ONDRACEK, Institute of Physics of ASCR, Czech Republic, F. FLORES, Universidad Autonoma de Madrid, Spain
EN+SS-FrM5 Narrowing of Band Gap in 1D Arrays of TiO2 Nanoparticles for Photocatalysis: Studies using X-ray Spectroscopies with In Situ Water Exposure and Heating, Y. LIU, J. TAING, University of California Irvine, C.C.
ET+SS+GR+SP-FrM5
CHEN, SLAC National Accelerator Lab, A. SORINI, Lawrence Livermore National Lab, M.H. CHENG, University of California Irvine, H. BLUHM, Z. LIU, Lawrence Berkeley National Lab, T. DEVEREAUX, SLAC National Accelerator Lab, J.C. HEMMINGER, University of California Irvine EN+SS-FrM6 A Theoretical Study of Carbon Dioxide Reduction on Catalysts, T. LIANG, Y.-T. CHENG, S.R. PHILLPOT, S.B. SINNOTT, University of Florida
Quantum Degeneracy Revealed by the Relation between the Tunneling Current and the Chemical Force, P. JELINEK, M.
Understanding the Influence of the Tunneling Current and the Chemical Force on the Contrast Formation in KPFM, Z. MAJZIK, M. ONDRÁČEK, M. ŠVEC, J. BERGER, P. JELÍNEK, Institute of Physics of ASCR, Czech Republic
An In Situ Technique for Using Ballistic Electron Emission Microscopy to Measure Hot Electron Transport at Metal Semiconductor Interfaces, R. RALSANO, V.P. LABELLA, University at Albany-SUNY
ET+SS+GR+SP-FrM6
EN+SS-FrM7 Doping Effects on the Electronic Structure of Graphitic C3N4 Photocatalysts: Insights from First Principles, S. ZULUAGA, S. STOLBOV,
ET+SS+GR+SP-FrM7 Invited
University of Central Florida
Essen, Germany
Electronic Transport on the Nanoscale, R. MOELLER, University of Duisburg-
10:40 am
Invited talk continued.
11:00 am
ET+SS+GR+SP-FrM9 A Transport Perspective on Local Manipulation of Ferroelectric and Correlated Electron Surfaces, P. MAKSYMOVYCH, Oak Ridge National Laboratory
11:20 am
11:40 am
184
Friday Morning, November 2, 2012 Graphene and Related Materials Focus Topic Room: 13 - Session GR+EM+ET+MS+NS-FrM Graphene Device Physics and Applications
Moderator: A. Turchanin, University of Bielefeld, Germany 8:20 am
GR+EM+ET+MS+NS-FrM1 Invited
Heterointegration of Graphene with Nano and Molecular Scale Structures for High Performance Devices, X. DUAN, University of California, Los Angeles
8:40 am
9:00 am
Invited talk continued.
GR+EM+ET+MS+NS-FrM3 Invited
Graphene RF: From Fundamentals to Opportunities, J.S. MOON, H.-C. SEO, M. ANTCLIFFE, S. LIN, A. SCHMITZ, D. LE, C. MCGUIRE, D. ZEHNDER, HRL Laboratories LLC, L.O. NYAKITI, V.D. WHEELER, R.L. MYERS-WARD, C.R. EDDY, JR., D.K. GASKILL, P.M. CAMPBELL, Naval Research Laboratory, K.-M. LEE, P. ASBECK, UC San Diego
9:20 am
9:40 am
Invited talk continued.
GR+EM+ET+MS+NS-FrM5 Invited
Graphene and Dielectric Integration: A Sticky Situation?, V.D. WHEELER, N.Y. GARCES, L.O. NYAKITI, R.L. MYERS-WARD, D.J. MEYER, U.S. Naval Research Laboratory, A. NATH, George Mason University, C.R. EDDY, JR., D.K. GASKILL, U.S. Naval Research Laboratory
10:00 am
Invited talk continued.
10:20 am
GR+EM+ET+MS+NS-FrM7 Achieving Scaled Dielectrics on Graphene Using Atomic Layer Deposition, S. JANDHYALA, G. MORDI, R.M. WALLACE, J. KIM, University of Texas at Dallas
10:40 am
GR+EM+ET+MS+NS-FrM8 Atomically-Smooth MgO Films Grown on Epitaxial Graphene by Pulsed Laser Deposition, S.C. STUART, A.A. SANDIN, North Carolina State University, O. NAYFEH, M.D. DUBEY, Army Research Laboratory, J.E. ROWE, D.B. DOUGHERTY, North Carolina State University, M.D. ULRICH, Army Research Office
11:00 am
Facile, Controllable Graphene-based P-N Junctions Using Self-Assembled Monolayers, J. BALTAZAR, H. SOJOUDI, J.
GR+EM+ET+MS+NS-FrM9
KOWALIK, L. TOLBERT, S. GRAHAM, C.L. HENDERSON, Georgia Institute of Technology
11:20 am
GR+EM+ET+MS+NS-FrM10 Impact of Cleaning Procedures on the Performance of Graphene-Based Field Effect Transistors, M. LODGE, M. ISHIGAMI, University of Central Florida
11:40 am
GR+EM+ET+MS+NS-FrM11 High Efficiency Graphene Solar Cells by Chemical Doping, X. MIAO, S. TONGAY, M.K. PETTERSON, K. BERKE, A.G. RINZLER, B.R. APPLETON, A.F. HEBARD, University of Florida
185
NOTES
186
Anticipated Schedule Friday Morning, November 2, 2012 TIME
SESSION
ROOM
8:00 am
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8:20 am
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8:40 am
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9:00 am
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9:40 am
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10:00 am
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10:20 am
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10:40 am
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11:00 am
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11:20 am
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11:40 am
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12:00 pm
______________________________________________________________________________________________________________________________________________
Lunch when
______________________________________________________________________________________________________________________________________________
with
______________________________________________________________________________________________________________________________________________
where
______________________________________________________________________________________________________________________________________________
Anticipated Schedule Friday Afternoon, November 2, 2012 TIME
SESSION
ROOM
1:00 pm
______________________________________________________________________________________________________________________________________________
1:20 pm
______________________________________________________________________________________________________________________________________________
1:40 pm
______________________________________________________________________________________________________________________________________________
2:00 pm
______________________________________________________________________________________________________________________________________________
2:20 pm
______________________________________________________________________________________________________________________________________________
2:40 pm
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3:00 pm
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3:20 pm
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3:40 pm
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4:00 pm
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4:20 pm
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4:40 pm
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5:00 pm
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187
Authors Index Bold page numbers indicate the presenter — A — Abbott, J.: LB+EM+GR+MN+TR-WeA3, 146 Abdallah, J.: PS2-TuM9, 108 Abdallah, L.S.: EL+TF+AS+EM+SS-TuP2, 125; EL+TF+BI+AS+EM+SS-MoA9, 92; EM+NS-FrM9, 183 Abdulagatov, A.: TF+EN-MoA3, 98 Abe, M.: SP+AS+BI+ET+MI+NS-TuA11, 119 Abe, S.: EN-ThP12, 175 Abe, Y.: TF-ThP2, 180 Abel, J.: EM+NS-FrM5, 183; GR+AS+NS+SP+SS-TuA11, 115 Abel, M.-L.: AS-TuP4, 124 Abell, J.L.: TF+SE+NS-WeM12, 139 Abou Rich, S.: PS-ThP32, 179 Abraha, P.: LB+EM+GR+MN+TR-WeA2, 146 Abraham, B.: SE+PS-TuM6, 108 Abrasonis, G.: SE+NS-MoM2, 88 Acharya, A.: EM-ThP5, 175 Acomb, P.: VT-TuP2, 130 Adam, T.N.: EL+TF+AS+EM+SS+PS+EN+NMMoM9, 83 Adamiv, V.T.: AC+TF+SS+MI-MoA7, 91 Adams, D.: TF+EM+SE+NS-ThM5, 162 Adamska, L.: ET+SS+GR+SP-ThA4, 168; GR+AS+EM+NS+SS-WeA2, 145 Adderley, P.A.: VT-MoM5, 90; VT-TuP16, 130 Addou, R.: GR+EM+NS+SS+TF-ThA7, 169 Adelmann, C.: IS+AS+OX+ET-WeM9, 135; TF-ThP1, 180 Adesanya, K.: MN+AS-MoM10, 85 Adib, K.: SS-TuM4, 109 Adiga, V.P.: MN-MoA1, 94; MN-TuM10, 106; MN-TuM11, 106 Adusumilli, S.P.: EN+TF-WeA12, 144 Agarwal, A.: PS2-MoA3, 97; PS2-TuM11, 108 Agarwal, S.: EN+PS-WeM4, 133; NS-MoM6, 86; PS-MoM10, 88; TF-ThP15, 180 Ahanotu, O.N.: NS+SP-MoA11, 95 Ahlgren, M.: TF+NS+EM-ThM11, 163 Åhlund, J.: AS+TF+VT-FrM7, 183 Ahmadi, M.: SS-TuP25, 129 Ahn, C.H.: TC-ThP1, 180 Ahn, J.R.: GR+EM+NS+PS+SS+TF-MoM11, 85; GR+EM+NS+PS+SS+TF-MoM4, 85; GR-ThP6, 176; NS+EN-TuM1, 107; NSThP9, 178; SS+NS-ThA3, 170 Ahn, S.J.: NS-ThP5, 178 Ai, C.-F.: PS-ThP45, 179 Ai, M.: HI+AS+BI+NS-ThM5, 158 Aihara, T.: EN+TF-TuA11, 114; EN+TFTuA12, 114 Ajayan, P.: GR+EM+NS+SS+TF-ThA3, 169 Ajayi, O.: TF-MoM8, 89 Akarvardar, K.: PS2-TuM9, 108 Akarvardar, S.: PS2-TuM9, 108 Akbar, D.: PS-ThA7, 170; PS-ThP33, 179 Akhmetov, A.: BI+AS-TuA8, 113 Akram, A.: EN+TF-MoA11, 93 Aksamija, Z.: EM+SS+AS+NS-ThM10, 155 Akturk, A.: EM+OX-WeA9, 144 Akyildiz, H.: TF2-TuA10, 120 Alaboson, J.M.P.: GR+AS+NS+SP+SSTuA9, 115 Alavi, Z.: AS-WeM6, 132 Al-Bataineh, S.A.: PS+BI-MoA7, 96 Albert, M.: NM+AS+MS-MoM4, 86 Albin, D.S.: EN+AS-ThA1, 167 Albrecht, P.M.: SS-TuM11, 109
Author Index
Alcantara Ortigoza, M.: AS+BI-TuA1, 113; EN+NS-ThM3, 156; NS-MoM10, 86 Alcántara Ortigoza, M.: AS+BI-TuA3, 113 Alcantara, M.: SS+NS-ThA9, 170 Aldinger, B.S.: NS-ThM9, 159 Aldred, N.: BI-TuP16, 125 Alem, N.: GR+AS+NS+SS-ThM5, 157 Alexander, M.R.: BI+SS+NS-WeM12, 132; BI-MoA10, 92; BI-MoA4, 92; BI-MoA8, 92; MB+BI-ThM12, 158 Alexander, W.A.: SS-MoA1, 98 Alexander-katz, A.: MN-MoA11, 94 Alexandre Diniz, J.: EM-ThP7, 175 Algarin-Amaris, P.: EN+TF-WeA8, 144 Alialy, S.: EN-ThP13, 175 Alian, A.: EM+TF+OX+GR-MoA1, 93 Alibabaei, L.: EN+SS-FrM3, 184 Allard, L.F.: IS-TuP3, 126 Allen, M.S.: MN-MoA6, 94; MN-TuM6, 106 Allen, S.: BI+SS+AS-TuM1, 103; PS-ThP1, 178; SP+AS+BI+ET+MI+NS-TuA9, 119 Allen, T.: NS+AS+SS+SP-WeM2, 136 Allers, L.: EW-WeL1, 142 Alles, M.L.: EM+SS+AS+NS-ThM11, 155 Allred, D.D.: MN+AS-MoM4, 85 Al-Mahboob, A.: GR-ThP11, 176; IS+AS+BI+ET+GR+NS-TuA8, 116 Almer, J.: TF+NS+EM-ThM11, 163 Alnabulsi, S.S.: AS-ThA3, 166 Alper, J.P.: EN+TF-WeA4, 144 Altansukh, B.: PS2-ThM11, 160 Altfeder, I.: TR-TuA12, 121 Altman, E.I.: OX+SS+TF+MI-MoA2, 96; SP+AS+BI+ET+MI+NS-TuA10, 119 Alvarez, C.: IS+AS+BI+ET+GR+NS-TuA7, 116 Alves, E.: AC+TF+SS+MI-MoA9, 91 Amano, H.: PS2-ThM5, 160 Amanpour, M.: GR-ThP8, 176; SS-WeA1, 150 Ambaye, H.: MI+OX-WeA12, 147 Aminpour, M.: AS+BI-TuA1, 113; AS+BITuA3, 113 Ampuero, J.L.: TC-ThP3, 180 Amstad, E.: NS+EN+GR-TuA1, 117 An, S.-H.: PS-ThP41, 179 Ancona, M.G.: TF+AS-TuA3, 120 Anders, A.: SE+PS-TuM1, 108; SE+PSTuM10, 108 Andersen, J.N.: GR+AS+NS+SP+SS-TuA7, 115; IS+AS+SS+EN-TuM12, 105 Andersen, O.Z.: BI-MoM11, 83; BI-TuP1, 125 Anderson, C.M.: PS-WeM3, 137 Anderson, D.G.: BI-MoA10, 92; BI-MoA4, 92; BI-MoA8, 92; MB+BI-ThM12, 158 Anderson, E.V.: MB+BI-ThM6, 158 Anderson, K.: MI+OX-WeA2, 147 Anderson, T.J.: EM-ThP4, 175; EN+TFTuM10, 104; GR+EM+ET+NS+TFMoA1, 94; GR-ThP9, 176 Andersson, P.: SS-MoA11, 98 Ando, T.: EM+TF+OX+GR-MoA7, 93 Andrew, M.: EN+SS-FrM3, 184 Ansai, H.: PS2-ThM4, 160 Ansari, N.: TR+SE-WeM10, 140 Antcliffe, M.: GR+EM+ET+MS+NS-FrM3, 185 Antohe, A.: VT-TuP9, 130 Antonelli, G.A.: EM-ThP10, 175 Antony, A.: SS+EN+OX-ThM10, 161 Anuniwat, N.: MI+EN+BI-TuA7, 116 Anwar, S.R.M.: EM+TF+OX+GR-MoA4, 93 Aoki, T.: AS-ThM9, 155 Aoki, Y.: SS-MoA8, 98
188
Aouadi, S.: SE+NS-MoA1, 97 Apalkov, D.: MI+OX-WeA7, 147 Apkarian, V.A.: SP+AS+BI+ET+MI+NSTuA3, 119 Appleton, B.R.: GR+EM+ET+MS+NSFrM11, 185; LB+EM+GR+MN+TRWeA7, 146 Apra, E.: MI-ThP4, 177 Arahara, S.: SS-TuP7, 129 Arai, K.: VT-MoA1, 99; VT-MoA4, 99 Araiza-Ibarra, J.J.: TF-ThP16, 180 Arakawa, I.: TR-TuP2, 130; VT-TuP8, 130 Arcot, A.R.: BI+AS-TuA3, 113 Areias, A.C.: AS-TuP11, 124; BI+AS-TuA7, 113 Arenholz, E.: GR+AS+EM+MI+MN-TuM9, 105 Argibay, N.: LB+EM+GR+MN+TR-WeA1, 146 Ariyan, M.: EN-ThP9, 175 Arlinghaus, H.F.: AS-TuP1, 124; BI-TuP12, 125 Arman, M.A.: GR+AS+NS+SP+SS-TuA7, 115; IS+AS+SS+EN-TuM12, 105 Armstrong, S.: EW-TuA6, 115 Arnadottir, L.: SS-ThA6, 171 Arnau, A.: SS-ThA7, 171 Arnebrant, T.: BI+SS+AS-TuM3, 103 Arnold, J.: PS2-TuM9, 108; PS-ThP1, 178; PS-WeM4, 137 Arnold, M.S.: EN+TF-TuA3, 114; GR+AS+EM+NS+SS-WeA9, 145 Arnold, P.C.: VT-MoA11, 99 Arpa, R.: VT-TuM9, 110 Arpa-Sancet, M.P.: BI-TuP16, 125 Arpin, K.A.: EN+NS-ThA1, 168 Arregi, J.A.: MI+EN+BI-TuA12, 116 Artyushkova, K.: EN+AS-ThA6, 167; IS+AS+SS+EN-TuM6, 105 Arunachalam, V.: PS-WeM11, 137 Arvet, C.: PS-ThP26, 179 Aryal, P.: EL+TF+AS+EM+SS+PS+EN+NMMoM1, 83 Asadollahbaik, A.: HI+AS+BI+NS-ThM3, 158 Asami, S.: NM-TuP1, 127 Asbeck, P.: GR+EM+ET+MS+NS-FrM3, 185 Ashurst, W.R.: TR+SE-WeM10, 140 Assoufid, L.: SE-TuP4, 128 Asthagiri, A.: OX-TuP1, 127; SS+EN+OXThM10, 161 Ataç, D.: NS+SP-MoA9, 95 Atalay, R.: EM+TF+AS-ThA11, 167; EM+TF+AS-ThA9, 167; EM-ThP6, 175 Atanassov, P.: EN+AS-ThA6, 167; IS+AS+SS+EN-TuM6, 105 Atkinson, S.: MB+BI-ThM12, 158 Attili, S.: BI+AS-TuA9, 113 Attygalle, D.: EL+TF+AS+EM+SS+PS+EN+NMMoM1, 83 Atwater, H.A.: EN+TF-TuA1, 114 Aubry, O.: PS+EM-MoM3, 87 Auer, M.: TF+EM+SE+NS-ThM6, 162 Auerbach, D.J.: SS-MoM4, 89 Augustine, B.H.: SS-WeM10, 138 Autes, G.: GR+AS+NS+SS-ThM5, 157 Auzély, R.: BI+SS+NS-WeM10, 132 Avci, R.: NS-ThM12, 159 Axnanda, S.: IS+AS+SS+EN-TuM4, 105 Aydil, E.S.: EN+TF-MoA8, 93; EN+TFMoA9, 93; EN+TF-TuM9, 104 Ayers, J.E.: EM+MI-ThA1, 166; EM+MIThA2, 166
Azarnouche, L.: PS2-TuM2, 108; PS-ThP5, 178; PS-ThP7, 178
— B —
Baba, A.: TF+AS-WeA8, 151 Baber, A.: SS-WeM1, 138 Babu, M.: EN-ThP8, 175 Baby, A.: TF+NS+EM-ThM10, 163 Baddorf, A.P.: ET+NS+EM-ThM3, 157; SSWeM4, 138 Bader, S.D.: MI+EN+BI-TuA1, 116 Bae, H.-B.: EM+OX-WeA11, 144 Bae, I.-S.: PS-ThP42, 179 Baehtz, C.: SE+NS-MoM2, 88 Baek, H.-J.: EN+NS-MoM1, 84 Baek, K.-H.: MN+AS-MoM8, 85 Baer, D.R.: AS+BI-TuA12, 113; AS-TuP17, 124; BI-TuP9, 125 Baeumer, M.: NS+AS+SS+SP-WeM3, 136 Bagge-Hansen, M.: AS+TF+VT-FrM2, 183; IS+AS+OX+ET-WeM6, 135; NS+AS+SS+SP-WeM3, 136 Bagnall, D.M.: HI+AS+BI+NS-ThM3, 158 Bagus, P.S.: SS+OX-WeM9, 138 Bahng, W.: EM-TuM10, 103 Bai, J.: TF2-TuA3, 120 Bai, K.H.: PS-ThP44, 179 Baikie, I.D.: EW-WeL6, 142 Bailey, C.: EN+NS-MoM10, 84 Bakhru, H.: EM+TF+OX+GR-MoM3, 84 Baklanov, M.R.: PS1-ThM2, 160 Balci, S.: ET+NS+EM-ThM11, 157 Baldasseroni, C.: MI+OX-WeA1, 147 Baldo, P.M.: IS+AS+OX+ET-WeM3, 135 Baldwin, M.J.: PS2-WeA1, 148 Ballinger, T.: EW-TuL1, 111 Balog, J.: IS+AS+BI+ET+GR+NS-TuA3, 116 Balsano, R.: EM+NS-FrM5, 183 Baltazar, J.: GR+EM+ET+MS+NS-FrM9, 185; GR-ThP10, 176 Ban, S.: NS-ThP2, 178 Banerjee, S.K.: EM+OX-WeA1, 144 Banik, A.: PS2-TuM1, 108; PS2-TuM6, 108 Banna, S.: PS-ThA10, 170 Banquy, X.: TR-TuA4, 121 Bao, K.: NS-ThM9, 159 Bao, Y.: MI+EN+BI-TuA9, 116 Baran, N.: BI-TuP14, 125 Barankova, H.: SE+PS-TuA7, 118 Barbacci, D.: BN+AS-WeA12, 143 Barback, C.V.: BI-TuP15, 125; BN+ASWeA3, 143 Barcaro, G.: SS+OX-WeM12, 138 Bardos, L.: SE+PS-TuA7, 118 Bare, S.R.: SS-WeA7, 150 Barkam, S.: BI-TuP7, 125; BI-TuP8, 125; SSTuP12, 129 Barker, P.M.: SE+PS-TuM5, 108 Barkett, L.A.: MN-MoA6, 94 Barkley, S.: TR+SE-WeM10, 140 Barlam, D.: OX+EM+MI+NS+TF-MoM11, 87 Barlaz, D.E.: SS+EN+OX-ThM4, 161 Barlow, A.J.: SS+NS-ThA7, 170 Barmak, K.: EM-TuA2, 114; EM-TuA7, 114 Barnes, T.: TF+AS-WeA10, 151 Barnola, S.: MN-TuP3, 126; PS2-TuM5, 108; PS-ThP26, 179 Barraud, S.: PS2-TuM5, 108 Barraza-Lopez, S.: EM+NS-FrM5, 183 Barrett, D.A.: BI-MoA8, 92 Barrett, L.: MN+AS-MoM4, 85 Barrett, N.: GR+AS+NS+SP+SS-TuA1, 115 Barteau, M.: SS-WeA9, 150 Bartels, C.: SS-MoM4, 89 Bartels, L.: GR-ThP8, 176; SP+AS+BI+ET+MI+NM+NS+SS+TFWeM5, 137; SS-WeA1, 150; SS-WeM2, 138 Bartelt, N.C.: TF+EM+SS-ThA10, 172
Bartha, J.W.: NM+AS+MS-MoM4, 86 Bartis, E.: PS+BI-MoA2, 96; PS+BI-MoA6, 96 Barton, D.: EL+TF+AS+EM+SS+PS+EN+NMMoM10, 83 Barton, R.A.: MN-MoA1, 94; MN-TuM10, 106; MN-TuM11, 106 Bartynski, R.A.: AS-MoA10, 91; EN+ASThA9, 167; OX+SS+TF+MI-MoA6, 96 Baruth, A.: EN+TF-MoA9, 93 Baski, A.A.: EM+TF+AS-ThA4, 167; SS+EM-WeA1, 149 Basu, D.: EM+OX-WeA1, 144 Batan, A.: SE+PS-TuA9, 118 Batzill, M.: GR+AS+EM+NS+SS-WeA8, 145; GR+EM+NS+SS+TF-ThA7, 169; SS-TuP15, 129 Bauer, E.: IS+AS+OX+ET-WeM3, 135 Bauer, S.: BI-TuP16, 125 Baughman, W.: ET+NS+EM-ThM11, 157; NM+AS+MS-MoM5, 86 Baum, J.: SP-TuP1, 128 Baumann, T.: IS+AS+OX+ET-WeM6, 135 Baur, M.: AS-ThM10, 155 Baykara, M.Z.: SP+AS+BI+ET+MI+NSTuA10, 119 Bazarov, I.: VT+AS+SS-WeM2, 140; VTTuA11, 121 Be, C.L.: BI-MoM5, 83 Beard, M.: PS2-TuM9, 108; PS-ThP1, 178; PS-WeM1, 137 Beard, M.C.: EN+NS-MoM3, 84 Beaudry, A.L.: TF+SE+NS-WeM9, 139 Becchaku, M.: SS-TuP17, 129 Beck, D.: SP+AS+BI+ET+MI+TF-WeA11, 149 Becker, C.R.: EN+NS-ThM10, 156 Becker, J.S.: PS1-TuA11, 117; TF+EM+SSThA7, 172; TF-WeM1, 139 Becker, U.: VT-MoA1, 99 Beckers, M.: BN+AS-WeA11, 143 Bedzyk, M.J.: GR+AS+BI+PS+SS-WeM1, 134; GR+AS+NS+SP+SS-TuA9, 115 Beech, I.: NS-ThM12, 159 Beechem, T.E.: GR+AS+NS+SP+SS-TuA8, 115 Behafarid, F.: SS+NS-ThA8, 170; SS-TuP27, 129 Behkam, B.: BI-TuP10, 125 Bekman, H.H.P.Th.: HI+AS+NS-WeA9, 146; PS-ThP15, 178 Belu, A.: AS+BI-TuM4, 102 Belyansky, M.P.: NM+NS+MS+EM-MoA4, 95 Belyea, D.D.: TF-ThP4, 180 Bemis, J.: EW-TuM8, 104; SP+AS+BI+ET+MI+TF-WeA11, 149 Benavidez, T.: EL+TF+BI+AS+EM+SSMoA3, 92 Benedek, G.: EM+TF-WeM12, 133 Benndorf, C.: TC-ThP3, 180; TR-TuP4, 130 Bennetsen, D.T.: BI+SS+NS-WeM1, 132 Bennett, B.: EM+TF+OX+GR-MoA10, 93 Bennett, C.J.: GR+AS+BI+PS+SS-WeM9, 134 Bennett, E.: SE-TuP4, 128 Bent, S.F.: EM-TuA1, 114; SS+EM-WeA8, 149 Bentabet, A.: AS-TuP25, 124 Ben-Yoav, H.: BI+SS+NS-WeM2, 132 Bera, K.: TF+AS-TuA11, 120 Berdova, M.: TF+NS+EM-ThM10, 163 Berger, A.: MI+EN+BI-TuA12, 116 Berger, J.: ET+SS+GR+SP-FrM5, 184 Bergersen, H.J.: AS+TF+VT-FrM7, 183 Beringer, D.B.: VT+AS+SS-WeM10, 140; VT+AS+SS-WeM6, 140; VT+AS+SSWeM9, 140
189
Berke, K.: GR+EM+ET+MS+NS-FrM11, 185 Berkh, O.: MN+AS-MoM10, 85 Bernal Ramos, K.: TF+NS+EM-ThM2, 163; TF+NS+EM-ThM9, 163 Bernasconi, M.: EM+TF-WeM12, 133 Bernholc, J.: SS-WeM4, 138 Bernson, E.: BI-MoA3, 92 Berry, N.: TF+AS-WeA2, 151 Besbes, R.: AC+EN-TuM11, 102 Besenbacher, F.: BI-MoM11, 83; BI-TuP1, 125; NS+AS+SS+SP-WeM9, 136 Besnier, J.-F.: EL+TF+AS+EM+SS+PS+EN+NMMoM3, 83 Beugin, V.: NM+NS+MS+EM-MoA6, 95 Beyer, A.: HI+AS+BI+NS-ThM11, 158; HI+AS+BI+NS-ThM5, 158; HI-ThP1, 177 Bezares, F.J.: GR+AS+BI+PS+SS-WeM9, 134; GR+EM+ET+NS+TF-MoA1, 94 Bezarez, F.J.: GR-ThP9, 176 Bhairamadgi, N.S.: TF+EM+SS-ThA4, 172 Bhardwaj, C.: BI+AS-TuA8, 113 Bhat, N.: AS-TuP23, 124 Bhatt, S.: VT+AS+SS-WeM11, 140 Bhattacharya, A.: NS+AS+SS+SP-WeM12, 136 Bhattacharyya, D.: EM+SS+AS+NS-ThM4, 155 Biegalski, M.D.: IS+AS+SS+EN-TuM5, 105 Bielefeld, J.: EM-TuA1, 114; GR+EM+NS+SS+TF-ThA1, 169 Bielejec, E.: EM-ThP2, 175 Biener, J.: IS+AS+OX+ET-WeM6, 135; NS+AS+SS+SP-WeM3, 136 Biener, M.: IS+AS+OX+ET-WeM6, 135; NS+AS+SS+SP-WeM3, 136 Bilich, D.: AS-ThA1, 166 Bilke, L.: EM-ThP15, 175 Billing, J.M.: AC+EN-TuM5, 102 Bindl, D.J.: EN+TF-TuA3, 114 Binek, C.: MI+OX-WeA10, 147 Bingaman, D.: EW-TuA6, 115 Bingham, N.: MI+OX-WeA9, 147; OX+EM+MI+NS+TF-MoM1, 87 Biolsi, P.: PS2-TuM1, 108; PS-MoM5, 88; PS-ThP16, 178 Biró, L.P.: AS+TF+VT-FrM3, 183 Biswal, S.L.: EN+NS-ThM12, 156 Biswas, A.: MI+SP+AS-ThM3, 159 Blair, S.L.: BN+AS-WeA3, 143 Blanch, A.J.: SS+NS-ThA7, 170 Blanchard, D.L.: AC+EN-TuM5, 102 Blanchet, P.: PS+BI-MoA11, 96 Blaze, M.: BI+AS-TuA8, 113 Blechle, J.M.: PS-ThP19, 178 Blomfield, C.: EW-TuL4, 111 Blomfield, C.J.: AS+BI-TuM10, 102; AS+BITuM3, 102; AS+NS+SS+TF-WeA8, 143; AS-ThM1, 155; AS-TuP13, 124; ASTuP14, 124 Blomquist, J.: SS-MoA11, 98 Bluhm, H.: EN+SS-FrM5, 184; IS+AS+SS+EN-TuM1, 105; IS+AS+SS+EN-TuM5, 105; SS-ThA1, 171 Bobek, S.: GR-ThP8, 176; SS-WeA1, 150; SS-WeM2, 138 Bockowski, M.: AC+TF+SS+MI-MoA9, 91 Bockstaller, M.R.: TC+EM+AS-WeA9, 150 Bodart, P.: PS1-WeA2, 148 Boden, S.A.: HI+AS+BI+NS-ThM3, 158 Bodnar, O.: VT-MoA1, 99 Boineau, F.: VT-MoA1, 99 Bojorge, C.: TR+SE-WeM4, 140 Böker, A.: TF+EM+SS-ThA9, 172 Bol, A.: TF+EN-MoA4, 98 Boland, J.: HI+AS+BI+NS-ThM9, 158 Bolotin, I.: EN-ThP3, 175
Author Index
Bolotin, K.I.: GR+EM+ET+NS+TF-MoA3, 94 Bolt, R.J.: PS-ThA9, 170 Bolvardi, H.: SE+NS-MoM8, 88 Bonnell, D.A.: NS-WeA1, 147; SP+AS+BI+ET+MI+TF-WeA3, 149; SP+AS+BI+ET+MI+TF-WeA4, 149; SS+OX-WeM10, 138 Bonucci, A.: VT-TuM12, 110 Bonvalot, M.: OX-TuP2, 127 Boos, J.B.: EM+TF+OX+GR-MoA10, 93 Boosalis, A.: LB+EM+GR+MN+TR-WeA10, 146 Booth, J.-P.: EN+PS-WeM5, 133 Bootman, M.: IS-TuP3, 126 Bora, D.: IS+AS+SS+EN-TuM3, 105 Borchers, J.: OX+EM+MI+NS+TF-MoM10, 87 Bordel, C.: MI+OX-WeA1, 147 Borgatti, F.: AS-ThA10, 166 Borgström, M.T.: ET+NS+EM-ThM6, 157 Boris, D.R.: PS1-TuM12, 107 Borisov, V.: BI+AS-TuA9, 113 Borkowski, M.: AC+EN-TuM9, 102 Borner, K.: EM+TF-WeM5, 133 Bornschein, L.: VT-TuM11, 110 Borovsky, B.P.: TR+SE-WeM10, 140; TRTuA10, 121 Borsa, D.: TC+EM+AS+TF+EN-ThM2, 162 Borst, C.: EM-ThP8, 175 Bosch, R.: TC+EM+AS+TF+EN-ThM2, 162 Bose, S.: OX+EM+MI+NS+TF-MoM10, 87 Bosnick, K.: NS-ThP2, 178 Bostwick, A.: GR+EM+ET+NS+TF-MoA8, 94 Bøttiger, J.: BI-MoM11, 83 Boturyn, D.: BI+SS+NS-WeM10, 132 Bouarouri, A.: PS+BI-MoA10, 96 Boucher, M.: SS-WeM1, 138 Bouchoule, S.: AS-MoM4, 82 Boufnichel, M.: MN+AS-MoM6, 85; PS1ThM3, 160 Bourgeois, S.: SS+OX-WeM6, 138 Boutwell, C.: TF+AS-WeA9, 151 Boutwell, R.C.: TF+AS-WeA7, 151 Bouxsein, C.: TR+SE-WeM10, 140 Bowden, M.E.: MI-ThP4, 177; SS+EN+OXThM11, 161 Bowman, S.R.: EM+TF+AS-ThA6, 167 Boxford, W.: AS-ThM1, 155; AS-TuP13, 124; AS-TuP14, 124 Boyce, M.C.: EM+TF-WeM11, 133 Braithwaite, N.St.: PS1-WeA2, 148 Brant, A.T.: AC+TF+SS+MI-MoA7, 91 Bratescu, M.A.: GR-ThP7, 176; NS-ThP8, 178; PS-ThP29, 179 Braun, A.: IS+AS+SS+EN-TuM3, 105 Braun, P.V.: EN+NS-ThA1, 168; SE+NSMoA10, 97 Braunstein, P.: GR+EM+ET+NS+TF-MoA7, 94 Bravo-Sanchez, M.: AS-TuP15, 124 Bray, J.A.: PS-ThA10, 170 Brehmer, F.: EN+PS-WeM3, 133 Breitenstein, D.: TF-ThP14, 180 Breitung, E.: TF-MoM3, 89 Breitweiser, R.: LB+EM+GR+MN+TRWeA8, 146 Brennan, B.: EM+TF+OX+GR-MoM5, 84; EM-TuM3, 103 Brenner, D.W.: TF+AS-TuA12, 120; TF+ASTuA7, 120 Brett, M.J.: TF+SE+NS-WeM11, 139; TF+SE+NS-WeM5, 139; TF+SE+NSWeM9, 139 Brewer, J.R.: EL+TF+AS+EM+SS-TuP1, 125 Brigg, W.: PS2-MoA6, 97 Brihoum, M.: PS1-WeA2, 148; PS-ThP5, 178; PS-ThP7, 178
Author Index
Brink, M.: PS1-ThM12, 160 Brinson, B.: BN+AS-WeA12, 143 Brocklesby, W.S.: SE+NS-MoA3, 97 Broitman, E.: TF+NS+EM-ThM12, 163; TR+SE-WeM4, 140 Bronneberg, A.C.: PS2-WeA9, 148 Brown, A.: BI+SS+NS-WeM2, 132; MNMoA10, 94 Brown, C.: EN+NS-ThM10, 156 Brown, R.D.: EM+TF-WeM12, 133 Browning, R.: AS+TF+VT-FrM6, 183 Bruce, R.L.: PS-MoM6, 88; PS-WeM10, 137 Bruchez, M.: IS-TuP3, 126 Brucker, G.A.: VT-MoA10, 99; VT-TuP2, 130 Bruhn, T.: GR+EM+NS+SS+TF-ThA6, 169 Brukman, M.: SP+AS+BI+ET+MI+TFWeA4, 149 Brumbach, M.T.: LB+EM+GR+MN+TRWeA1, 146; OX+SS+TF+MI-MoA9, 96 Brunelle, A.: BN+AS-WeA7, 143 Bryan, S.R.: AS-ThA3, 166; AS-WeM12, 132 Bryson, C.: VT-TuP17, 130 Bsiesy, A.: OX-TuP2, 127 Buchanan, D.A.: AC+TF+SS+MI-MoA7, 91 Buchholz, M.: OX+SS+TF+MI-MoA10, 96 Bucholz, E.W.: TR+BI-TuM10, 110 Buck, A.: BN+AS-WeA11, 143; IS-TuP4, 126 Buecheler, S.: TF+AS-WeA3, 151 Buechner, B.: GR-ThP3, 176 Büenfeld, M.: HI+AS+BI+NS-ThM5, 158 Buegler, M.: EM-ThP5, 175; EM-ThP6, 175 Bürstel, D.: SS-MoM2, 89 Büyükköse, S.: NS+SP-MoA9, 95 Buie, C.: EM+TF+OX+GR-MoA4, 93 Bull, H.: VT-TuP9, 130 Bultman, J.E.: TR+SE-WeM1, 140 Buongiorno-Nardelli, M.: GR-ThP11, 176 Burak, Ya.V.: AC+TF+SS+MI-MoA7, 91 Burden, D.: BI+AS-TuA4, 113 Burghaus, U.: NS+AS+SS+SP-WeM4, 136; SS-TuP19, 129; SS-TuP38, 129 Burkes, D.E.: AC+EN-TuM5, 102 Burkett, S.L.: MN+AS-MoM5, 85 Burnham, N.A.: MB+BI-ThM6, 158 Burris, D.L.: TR+BI-TuM4, 110 Burst, J.: TF+AS-WeA10, 151 Bushell, A.: AS-MoM10, 82; AS-TuP10, 124; EW-TuL3, 111 Busse, C.: GR+AS+NS+SP+SS-TuA7, 115 Butler, W.H.: MI+EN+BI-TuA3, 116 Butorin, S.M.: AC+MI+SS+TF-MoM5, 82 Butz, T.: GR+AS+EM+MI+MN-TuM9, 105 Byrns, B.: SE+PS-TuA3, 118; SE+PS-TuA4, 118 Bystrov, K.: PS2-WeA1, 148
— C —
Cabrera, W.: EM+TF+OX+GR-MoA6, 93; TF+NS+EM-ThM9, 163 Cabrera-Sanfelix, P.: SS-ThA7, 171 Cahill, D.G.: SE+NS-MoA10, 97 Cai, M.: GR+AS+NS+SS-ThM10, 157 Caillard, L.: EL+TF+BI+AS+EM+SS-MoA2, 92; EM+NS-FrM3, 183 Calder, S.: BI+SS+AS-TuM5, 103 Caldwell, J.D.: GR+AS+BI+PS+SS-WeM9, 134; GR+EM+ET+NS+TF-MoA1, 94; GR-ThP9, 176 Call, R.: AS+TF+VT-FrM2, 183 Callahan, C.: EW-TuM8, 104; SP+AS+BI+ET+MI+TF-WeA11, 149 Calliari, L.: GR-ThP3, 176 Callow, J.A.: BI-TuP16, 125; MB+BI-ThA3, 169 Callow, M.E.: BI-TuP16, 125; MB+BI-ThA3, 169 Calzolai, L.: BI+SS+AS-TuM12, 103 Calzolari, A.: GR-ThP11, 176
190
Calzolari, D.: NS+EN+GR-TuA1, 117 Camesano, T.A.: MB+BI-ThM6, 158 Camillone, N.: NS+AS+SS+SP-WeM12, 136 Campbell, C.: EN+TF-TuM10, 104 Campbell, C.T.: SS-TuM12, 109; SS-WeM6, 138; SS-WeM9, 138 Campbell, P.: EM+NS-FrM3, 183 Campbell, P.M.: GR+EM+ET+MS+NSFrM3, 185 Campbell, S.A.: EN+TF-TuM9, 104; TFThP10, 180 Campi, D.: EM+TF-WeM12, 133 Canavan, H.E.: BI-TuP2, 125 Candler, R.: MN-TuP7, 126; TF-ThP17, 180 Canepa, H.: TR+SE-WeM4, 140 Canepa, P.: EN+AS-ThA7, 167; IS-TuP2, 126 Cantoro, M.: EM+TF+OX+GR-MoA1, 93 Cao, J.: PS2-ThM5, 160 Cao, Y.: EM-ThP1, 175; TF+AS-WeA1, 151 Carbone, E.A.D.: PS1-WeA7, 148 Carcia, P.F.: TF-MoM10, 89; TF-WeM3, 139 Cardinaud, C.: AS-MoM4, 82; PS2-WeA10, 148 Carlson, R.P.: MB+BI-ThM4, 158 Carraro, C.: EN+TF-WeA4, 144 Carson, J.: AS+NS+SS+TF-WeA10, 143 Cartas, W.S.: SS-TuP23, 129 Carter, D.: PS-ThA4, 170; PS-ThA6, 170 Carter, Z.: EN+TF-WeA3, 144 Cartier, E.A.: EM+TF+OX+GR-MoA7, 93 Caruso, F.: BI-MoM1, 83 Caruso, L.: VT-TuM12, 110 Casolo, S.: GR+AS+EM+NS+SS-WeA12, 145 Caspar, J.: TF+AS-WeA1, 151 Castner, D.G.: AS+BI-TuA11, 113; ASWeM3, 132; BI+SS+AS-TuM6, 103; BN+AS-WeA9, 143; IS+AS+BI+ET+GR+NS-TuA1, 116 Castro, G.R.: AS+TF+VT-FrM5, 183 Caubet, P.: NM+NS+MS+EM-MoA6, 95 Cavanagh, A.: TF+EN-MoA3, 98 Caymax, M.: EM+TF+OX+GR-MoA1, 93; IS+AS+OX+ET-WeM9, 135; LB+EM+GR+MN+TR-WeA12, 146 Ceballos-Sanchez, O.: EM+TF+OX+GRMoA9, 93 Ceccone, G.: BI+SS+AS-TuM12, 103; NS+EN+GR-TuA2, 117 Celiz, A.D.: BI-MoA8, 92 Chabal, Y.J.: EL+TF+BI+AS+EM+SSMoA2, 92; EM+NS-FrM3, 183; EM+TF+OX+GR-MoA6, 93; EM+TFWeM4, 133; EN+AS-ThA7, 167; EN+TFWeA7, 144; GR+AS+BI+PS+SS-WeM2, 134; GR+AS+EM+NS+SS-WeA1, 145; IS-TuP2, 126; NS+SP-MoA7, 95; SS+EM-WeA11, 149; SS+EM-WeA9, 149; SS-TuP21, 129; SS-WeA12, 150; TF+AS+SS-ThA3, 171; TF+NS+EMThM2, 163; TF+NS+EM-ThM9, 163 Chae, J.: GR+EM+ET+NS+TF-MoA10, 94 Chagarov, E.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM6, 137 Chakradhar, A.: NS+AS+SS+SP-WeM4, 136; SS-TuP19, 129; SS-TuP38, 129 Chamberlin, S.E.: IS+AS+OX+ET-WeM2, 135; SS+EN+OX-ThM11, 161 Chambers, S.: SS+OX-WeM3, 138 Chambers, S.A.: IS+AS+OX+ET-WeM2, 135; MI-ThP4, 177; OX-TuP5, 127; SS+EN+OX-ThM11, 161; SS+OXWeM5, 138 Champlain, J.: EM+TF+OX+GR-MoA10, 93 Chan, C.: TF+AS-WeA1, 151 Chan, C.K.: VT+AS+SS-WeM1, 140; VTTuA12, 121 Chan, K.K.: EM+NS-FrM10, 183
Chandra, S.: MI-ThP2, 177; NS-MoM9, 86 Chang, C.: MB+BI-ThM12, 158 Chang, C.C.: VT+AS+SS-WeM1, 140; VTTuA12, 121 Chang, C.S.: GR+EM+ET+NS+TF-MoA6, 94 Chang, C.Y.: MN-MoA9, 94 Chang, H.W.: PS+BI-MoA1, 96 Chang, H.-Y.: PS-ThP41, 179; PS-ThP42, 179 Chang, J.: PS2-TuM6, 108 Chang, J.P.: EM+TF+AS-ThA3, 167; EN+NS-ThA6, 168; EN+NS-ThM6, 156; EN+TF-WeA9, 144; PS1-ThM11, 160; PS-MoM3, 88; TF+NS+EM-ThM6, 163 Chang, M.: NM+NS+MS+EM-MoA2, 95 Chang, M.H.: EM+SS+AS+NS-ThM12, 155 Chang, W.-T.: HI+AS+NS-WeA8, 146 Chang, Y.H.: EM+SS+AS+NS-ThM12, 155 Chanson, R.: AS-MoM4, 82 Chao, Y.C.: LB+EM+GR+MN+TR-WeA8, 146 Chapman, D.: EN+NS-MoM10, 84 Chapman, R.: EM+TF-WeM4, 133 Charles, A.: PS-MoM9, 88 Charrault, E.: TR-TuA4, 121 Chase, B.: SP+AS+BI+ET+MI+TF-WeA9, 149 Chaudhuri, S.: SS-WeA12, 150 Chauhan, L.: AS-TuP23, 124 Chaukulkar, R.P.: TF-ThP15, 180 Chavda, P.M.: VT+AS+SS-WeM11, 140 Chebiam, R.: EM-TuA12, 114 Chen, A.: VT-TuA4, 121 Chen, B.: BN+AS-WeA12, 143 Chen, C.: VT-TuA12, 121 Chen, C.C.: EN+SS-FrM5, 184 Chen, C.L.: VT+AS+SS-WeM1, 140; VTTuA12, 121 Chen, D.A.: SS-WeA3, 150 Chen, E.: MI+OX-WeA7, 147 Chen, F.-Z.: TF-ThP13, 180; VT-TuP5, 130 Chen, H.: PS2-TuM9, 108 Chen, H.-P.: TF-ThP13, 180 Chen, J.: EL+TF+AS+EM+SS+PS+EN+NMMoM4, 83; GR+AS+NS+SP+SS-TuA2, 115; PS1-ThM11, 160; SS-TuP3, 129; SSWeA9, 150 Chen, J.-H.: GR+AS+NS+SS-ThM5, 157 Chen, J.R.: VT+AS+SS-WeM1, 140; VTTuA12, 121 Chen, L.: EM+TF+OX+GR-MoM8, 84; NS+SP-MoA8, 95; PS1-TuM11, 107; PS1-WeA12, 148; PS2-MoA10, 97; PS2MoA11, 97; PS2-MoA9, 97; PS-ThP16, 178; PS-ThP30, 179; TF+SE+NS-WeM4, 139 Chen, Q.: PS+BI-MoA8, 96 Chen, R.: BI-MoM1, 83 Chen, S.: GR+AS+NS+SP+SS-TuA11, 115; PS2-ThM5, 160 Chen, T.Q.: PS-WeM1, 137; PS-WeM11, 137 Chen, W.C.: EM-ThP3, 175; TF-ThP7, 180 Chen, X.: NS-WeA1, 147; TF+EN-MoA6, 98 Chen, Y.: HI+AS+BI+NS-ThM9, 158 Chen, Y.C.: MN-MoA9, 94 Chen, Z.: PS1-TuA10, 117 Cheng, D.F.: SS-ThM1, 161 Cheng, D.L.: SS-TuP37, 129 Cheng, J.: PS1-ThM12, 160; PS-ThP10, 178 Cheng, M.H.: EN+SS-FrM5, 184 Cheng, S.-F.: GR+AS+EM+MI+MN-TuM1, 105 Cheng, Y.-T.: EN+SS-FrM6, 184; OX-TuP1, 127 Chepulskyy, R.: MI+OX-WeA7, 147 Chernyak, L.: EM-ThP1, 175 Chesaux, M.: PS-ThA3, 170
Cheung, W.S.: VT-TuP11, 130; VT-TuP12, 130; VT-TuP13, 130; VT-TuP14, 130 Cheyns, D.: AS-ThM6, 155 Chhowalla, M.: NS+EN+GR-TuA8, 117 Chiang, S.: NS-ThM6, 159; SS+NS-ThA6, 170 Chiba, Y.: PS-ThP1, 178; PS-WeM4, 137 Chichester, H.J.M.: AC+EN-TuM1, 102 Chien, D.: EM+TF+AS-ThA3, 167 Childress, J.R.: EM+MI-ThA8, 166 Chiou, P.-K.: TF-ThP13, 180 Chiou, P.W.: PS-ThP22, 179 Chirita, V.: TF+AS-TuA4, 120; TF+ASTuA9, 120 Chistyakov, R.: SE+PS-TuM6, 108 Chitre, K.: OX+SS+TF+MI-MoA6, 96 Cho, E.: MI-ThP1, 177 Cho, E.A.: PS-ThP23, 179 Cho, G.S.: PS+BI-MoA3, 96; PS-ThP38, 179 Cho, H.J.: MN-TuP6, 126 Cho, H.K.: NS+EN+GR-TuA11, 117; OX+EM+MI+NS+TF-MoM2, 87; TCThP1, 180 Cho, J.: EN+NS-ThM6, 156; EN+TF-WeA9, 144 Cho, K.J.: GR+AS+EM+NS+SS-WeA1, 145 Cho, M.L.: MI-ThP5, 177 Cho, S.C.: PS1-ThM4, 160 Cho, S.I.: PS2-ThM6, 160 Cho, S.W.: TC-ThP1, 180 Cho, T.S.: PS-ThP36, 179; SE+PS-TuM3, 108; SE+PS-TuM4, 108; TC+EM+AS+TF+EN-ThM12, 162 Choi, B.Y.: SS-ThA7, 171 Choi, D.: EM-TuA7, 114 Choi, D.H.: PS2-TuM6, 108 Choi, E.H.: PS+BI-MoA3, 96; PS-ThP38, 179 Choi, G.: PS-WeM9, 137 Choi, G.J.: BI-TuP5, 125 Choi, J.: GR+EM+ET+NS+TF-MoA7, 94; PS2-TuM11, 108; PS-MoM10, 88 Choi, J.W.: EN+NS-MoM5, 84; PS-ThP23, 179 Choi, J.Y.: GR+EM+NS+PS+SS+TFMoM11, 85 Choi, K.: EM+OX-WeA9, 144; EM+TF+OX+GR-MoA7, 93 Choi, K.R.: EM+TF+OX+GR-MoM8, 84; PS-ThP30, 179 Choi, S.: PS-ThP44, 179 Choi, S.H.: EM+OX-WeA11, 144 Choi, S.-H.: MN+AS-MoM8, 85 Choi, S.-H.: NS-ThP6, 178 Choi, W.J.: PS-ThP33, 179 Choi, Y.H.: NS-ThP6, 178 Choi, Y.J.: EM-TuM4, 103 Chopra, I.: SS-WeA12, 150 Chou, C.C.: PS-ThP22, 179 Chou, L.-W.: NS-WeA11, 147 Choudhary, K.: PS-ThP11, 178 Choudhury, F.A.: PS-ThP35, 179 Christen, H.M.: IS+AS+SS+EN-TuM5, 105 Christiani, G.: TF+AS-TuA10, 120 Christophis, C.: BI-TuP14, 125 Chu, J.-W.: PS+BI-MoA2, 96; PS+BI-MoA6, 96 Chuang, Y.: EM-ThM12, 156 Chumbuni-Torres, K.: EL+TF+BI+AS+EM+SS-MoA3, 92 Chun, S.H.: OX+EM+MI+NS+TF-MoM2, 87 Chun, Y.S.: EM+TF+OX+GR-MoM8, 84; PS1-ThM6, 160; PS-ThP30, 179; TF+ASWeA12, 151 Chung, B.W.: AC+MI+SS+TF-MoM9, 82 Chung, J.G.: AS-ThA4, 166; AS-TuP22, 124 Chung, S.: VT-TuP10, 130; VT-TuP7, 130 Chung, T.-Y.: PS+BI-MoA2, 96; PS+BIMoA6, 96 Chupas, P.: IS+AS+SS+EN-TuM9, 105
191
Churaman, W.: EM+OX-WeA9, 144 Chyan, O.: PS-WeM5, 137 Ciarnelli, V.: BI+SS+NS-WeM12, 132 Cimpoiasu, E.: GR+AS+NS+SS-ThM3, 157 Cipriany, B.R.: MN-TuM11, 106 Cirigliano, N.: EN+NS-ThM6, 156 Clare, A.S.: BI-TuP16, 125 Clark, B.D.: TF+MI-WeA3, 151 Clark, K.: ET+SS+GR+SP-ThA6, 168; GR+EM+NS+PS+SS+TF-MoM2, 85 Clark, M.D.: EN+TF-TuA7, 114 Clark, T.: BI+AS-TuA4, 113 Clarke, J.: EM-TuA12, 114 Claus, R.: TR+BI-TuM1, 110 Clavel, G.: TF+NS+EM-ThM9, 163 Clavero, C.: TF+AS+SS-ThA8, 171; VT+AS+SS-WeM10, 140; VT+AS+SSWeM6, 140 Clayton, A.: BI-MoM6, 83 Clendenning, S.: EM-TuA1, 114 Clergereaux, R.: PS+BI-MoA10, 96 Cleveland, E.: EM+TF+OX+GR-MoA10, 93; NS+EN-TuM2, 107 Cleveland, J.: EW-TuM8, 104; SP+AS+BI+ET+MI+TF-WeA11, 149 Clifton, P.H.: AS-TuP18, 124 Coad, B.R.: BI-MoA9, 92 Coclite, A.M.: TF-WeM5, 139 Coffey, K.R.: EM-TuA2, 114; EM-TuA7, 114 Coh, S.: OX+SS+TF+MI-MoA6, 96 Cohen, H.: ET+SS+GR+SP-FrM3, 184 Cohen, K.D.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM5, 137; SS-WeM2, 138 Cohen, S.A.: EM-TuA8, 114 Cohen, S.R.: OX+EM+MI+NS+TF-MoM11, 87 Coïa, C.: PS1-WeA9, 148 Colbow, V.: EN+AS-ThA6, 167 Colburn, M.: PS2-TuM9, 108 Colby, R.: AS+NS+SS+TF-WeA3, 143; AS+NS+SS+TF-WeA4, 143 Cole, C.: PS-ThP16, 178 Colesniuc, C.: AS+TF+VT-FrM2, 183 Colette, S.: PS-ThP32, 179 Collazo, R.: EM+TF+AS-ThA1, 167 Collette, S.: PS-ThP31, 179 Collins, K.: PS2-MoA3, 97 Collins, R.W.: EL+TF+AS+EM+SS+PS+EN+NMMoM1, 83; EL+TF+AS+EM+SS+PS+EN+NMMoM4, 83 Colón Santana, J.: GR+EM+ET+NS+TFMoA7, 94 Colpo, P.: NS+EN+GR-TuA2, 117 Comes, R.B.: TF+MI-WeA4, 151 Conard, T.: AS-ThM6, 155; TF-ThP1, 180 Condon, N.J.: EM+TF+AS-ThA6, 167 Conklin, D.: NS-WeA1, 147 Conley, J.F.: EM+OX-WeA12, 144 Conrad, E.: GR+AS+NS+SP+SS-TuA1, 115 Constable, E.C.: IS+AS+SS+EN-TuM3, 105 Conte, A.: VT-TuM12, 110 Cook, K.: EL+TF+BI+AS+EM+SS-MoA10, 92 Cooper, R.: SS-MoM4, 89 Cooperstein, M.A.: BI-TuP2, 125 Copel, M.W.: GR+EM+NS+PS+SS+TFMoM8, 85 Coppée, S.: SE+NS-MoA4, 97 Coraux, J.: GR+AS+EM+NS+SS-WeA10, 145 Corbitt, T.: MB+BI-ThM9, 158 Corso, M.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM4, 137 Cortes, J.P.: MN-MoA6, 94; MN-TuM6, 106 Cortes, R.: GR+EM+NS+SS+TF-ThA2, 169
Author Index
Cossement, D.: PS1-TuA8, 117 Côté, C.: PS+TC-WeM1, 136 Coultas, S.J.: AS+BI-TuM10, 102; AS+BITuM3, 102; AS+NS+SS+TF-WeA8, 143 Counsell, J.D.P.: AS+BI-TuM10, 102; AS+BI-TuM3, 102 Coutu, R.: TF-WeM1, 139 Cowin, J.: IS+AS+BI+ET+GR+NS-TuA12, 116 Cozza, I.F.: VT-TuM9, 110 Craft, S.: EM+TF+AS-ThA1, 167 Craighead, H.G.: MN-MoA1, 94; MNTuM10, 106; MN-TuM11, 106 Creatore, M.: EL+TF+AS+EM+SS+PS+EN+NMMoM6, 83; PS1-TuA1, 117; PS2-WeA9, 148; TC+EM+AS+TF+EN-ThM2, 162 Croad, O.: BI+SS+AS-TuM1, 103 Croy, J.R.: SS-TuP27, 129 Crumlin, E.: IS+AS+SS+EN-TuM5, 105 Cserny, I.: AS+TF+VT-FrM3, 183 Csik, A.: AS+TF+VT-FrM3, 183 Cuddy, M.F.: PS2-WeA7, 148; PS-ThP19, 178 Cui, J.B.: PS1-TuA12, 117 Cui, S.: GR+AS+NS+SP+SS-TuA2, 115; SSTuP3, 129 Cui, X.: AS+TF+VT-FrM1, 183 Cui, Y.S.: EM+MI-ThA11, 166 Culbertson, J.C.: GR+EM+NS+PS+SS+TFMoM3, 85 Culver, J.: BI+SS+NS-WeM2, 132; MNMoA10, 94 Cummings, P.T.: TF+AS-TuA1, 120 Cummings, S.P.: TF+EM+SS-ThA6, 172 Cumpson, P.J.: AS-MoA1, 91; SP+AS+BI+ET+MI+NM+NS+SS+TFWeM10, 137 Cunge, G.: PS1-WeA2, 148; PS2-WeA12, 148; PS-ThP7, 178 Cunningham, G.B.: EN+NS-MoM11, 84 Cuomo, J.: SE+PS-TuA3, 118 Curreli, D.: EN-ThP11, 175 Curtiss, L.: TF+EN-MoA1, 98 Cuypers, D.: IS+AS+OX+ET-WeM9, 135 Cyganik, P.: SS+NS-ThA10, 170; TF+AS+SS-ThA2, 171 Czaplewski, D.A.: MN+AS-MoM3, 85; NS+SP-MoA10, 95 Czarnetzki, U.: EN+PS-WeM12, 133; EN+PS-WeM9, 133
— D —
Dadap, J.: SS-TuP2, 129 Dadson, A.E.: TF2-TuA2, 120 Dahal, A.: GR+AS+EM+NS+SS-WeA8, 145; GR+EM+NS+SS+TF-ThA7, 169 Dähne, M.: EM+TF+AS-ThA10, 167 Dalberth, M.J.: TF+EM+SS-ThA7, 172; TFWeM1, 139 Dalmau, R.: EM+TF+AS-ThA1, 167 Daniels, S.: PS1-TuM3, 107; PS1-TuM9, 107; PS1-WeA1, 148; PS1-WeA4, 148 Darakchieva, V.: AC+TF+SS+MI-MoA9, 91 Darbal, A.: EM-TuA7, 114 Darnon, M.: PS1-WeA2, 148 Darrell, J.W.: PS-ThP21, 179 Das, S.: BI-TuP11, 125; BI-TuP13, 125; BITuP3, 125; BI-TuP7, 125; BI-TuP8, 125; MN-TuP6, 126 Dasaka, R.: PS-MoM9, 88 Dasari, S.: EN-ThP9, 175; SS-MoM10, 89; SS-MoM11, 89; SS-TuP16, 129 Dascier, D.: MB+BI-ThM9, 158 Datye, A.: SS-TuP27, 129 Davidson, M.R.: EM-ThP14, 175; NS-WeA2, 147 Davies, M.C.: BI+SS+NS-WeM12, 132; BIMoA10, 92; BI-MoA4, 92; BI-MoA8, 92; MB+BI-ThM12, 158
Author Index
Davis, A.N.: IS+AS+OX+ET-WeM11, 135 Davis, B.H.: NS-ThM12, 159 Davis, K.: NM+NS+MS+EM-MoA9, 95 Davis, R.C.: LB+EM+GR+MN+TR-WeA3, 146; MN+AS-MoM4, 85; TF2-TuA2, 120 Davis, R.F.: IS-TuP3, 126 Davydova, A.: PS2-WeA12, 148 Dawahre, N.: ET+NS+EM-ThM11, 157; NS+EN-TuM3, 107; NS-ThM11, 159 Dawson, B.: TR+SE-WeM11, 140 Day, Chr.: VT-TuM4, 110 Day, D.: BI+AS-TuA4, 113 De Alba, R.: MN-MoA1, 94 De Clercq, A.: IS+AS+OX+ET-WeM9, 135 de Gendt, S.: PS1-ThM2, 160 De Graeve, I.: SE+PS-TuA9, 118 De Jesus, J.C.: AS-TuP28, 124 De la Ree, A.B.: SS-WeM12, 138 De Luca, F.: TF-WeM5, 139 de Marneffe, J.-F.: PS1-ThM2, 160 De Moure-Flores, F.: NS-MoM2, 86; TFThP16, 180 De Padova, P.: GR+EM+NS+SS+TF-ThA6, 169 de Rooij, M.R.: TR+BI-TuM5, 110 De Temmerman, G.: PS2-WeA1, 148 De Vito, E.: EN+NS-ThM11, 156 De Vos, C.: PS-ThP31, 179 de Vries, H.: PS+TC-WeM2, 136 Dean, C.: GR+EM+ET+NS+TF-MoA10, 94 DeBord, J.D.: AS-ThM5, 155 Dedkov, Y.: EW-TuL6, 111 Dekoster, J.: EM+TF+OX+GR-MoA1, 93 Del Gado, E.: NS+EN+GR-TuA1, 117 DeLaRiva, A.T.: SS-TuP27, 129 Delattre, P.A.: EN+PS-WeM5, 133 Delgadino, G.: PS-WeM12, 137 Dellinger, A.: MB+BI-ThM2, 158 Demberger, C.: NM+NS+MS+EM-MoA9, 95 DeMeo, D.F.: EN+NS-ThA2, 168 Demers-Carpentier, V.: SS-ThM5, 161 Demidov, V.: PS-ThP17, 178 Demko, A.: NS+AS+SS+SP-WeM2, 136 Demura, K.: PS-ThP6, 178 Denbeaux, G.: VT-TuP9, 130 Dendzik, M.: SS+NS-ThA10, 170 Deng, R.: TF+SE+NS-WeM6, 139 Deng, X.: SS-ThA8, 171 Denis, L.: PS1-TuA8, 117 Denk, M.: SS+OX-WeM12, 138 Denning, C.: BI-MoA4, 92; BI-MoA8, 92 Denny, Y.R.: AS-TuP22, 124 Deram, M.: TR+SE-WeM10, 140 Desai, T.V.: IS+AS+BI+ET+GR+NS-TuA2, 116 Desbief, S.: PS+TC-WeM12, 136 Deskins, N.A.: SS+EN+OX-ThM9, 161; SSTuM5, 109 Despiau-Pujo, E.: PS1-WeA2, 148; PS2WeA12, 148 Desplats, O.: EM+TF+OX+GR-MoA9, 93 Despont, M.: NS+SP-MoA2, 95 Desse, F.: IS+AS+OX+ET-WeM11, 135 Desvoivres, L.: PS2-TuM5, 108; PS-ThP26, 179 Detchprohm, T.: EM+TF+AS-ThA7, 167 Detslefs, B.: GR+AS+NS+SP+SS-TuA9, 115 Devaraj, A.: AS+NS+SS+TF-WeA3, 143; AS+NS+SS+TF-WeA4, 143; HI-ThP2, 177; NS-ThP13, 178; NS-WeA10, 147; OX-TuP6, 127 Devereaux, T.: EN+SS-FrM5, 184 DeVore, T.C.: SS-WeM10, 138 Dewdney, J.: MN-MoA4, 94; NS-MoM9, 86 Dexter, S.C.: MB+BI-ThA7, 169 Dezelah, C.L.: EN+TF-WeA10, 144 Dhakal, T.: EN+TF-WeA12, 144; TF+ENMoA9, 98 Dhar, N.K.: EM+OX-WeA9, 144
192
Dhayal, M.: BI-TuP17, 125; NS-MoM11, 86 Dhere, N.: EN+TF-TuM11, 104; TF+ASWeA11, 151 Dhere, R.: EN+AS-ThA1, 167 D'hers, S.: MN-MoA11, 94 Dhiman, R.: EM+SS+AS+NS-ThM3, 155; EN-ThP5, 175 Diao, L.: PS2-TuM10, 108 Diao, Z.: MN+AS-MoM9, 85; MN-TuM5, 106; MN-TuM9, 106 Dias, N.K.: TR-TuP7, 130 Dick, D.: NS+SP-MoA7, 95 Dickinson, J.E.: SS-TuM4, 109 Diebold, A.C.: EL+TF+AS+EM+SS+PS+EN+NMMoM9, 83; GR+AS+NS+SP+SS-TuA11, 115; NM+AS+MS-MoM3, 86 Diem, M.: AS+NS+SS+TF-WeA11, 143 Diesing, D.: SS-MoM2, 89; SS-MoM3, 89; SS-TuP24, 129 Dietz, N.: EM+TF+AS-ThA11, 167; EM+TF+AS-ThA9, 167; EM-ThP5, 175; EM-ThP6, 175 DiLabio, G.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM2, 137 Dimitrakopoulos, C.: GR+AS+NS+SP+SSTuA11, 115 Ding, G.: PS-ThP10, 178 Ding, M.: MI+EN+BI-TuA7, 116 Diniz, J.A.: TF-ThP11, 180 Diomede, P.: PS2-MoA1, 97 Dittmann, R.: AS-ThA10, 166 Divan, R.S.: MI+SP+AS-ThM12, 159; MN+AS-MoM5, 85; NS+SP-MoA11, 95 Diwan, A.: TF-WeM6, 139 Doerner, R.P.: PS2-WeA1, 148 Dogan, I.: EN+PS-WeM4, 133 Dohnalek, Z.: SS+EN+OX-ThM5, 161; SSTuM1, 109 Dohnalova, K.: EN+PS-WeM4, 133 Doi, I.: EM-ThP7, 175; TF-ThP11, 180 Doi, K.: NM-TuP2, 127 Dolinaj, B.: PS1-WeA1, 148 Domen, K.: SS+EN+OX-ThM1, 161 Domenichini, B.: SS+OX-WeM6, 138 Dominé, D.: PS-ThA3, 170 Donaldson, S.H.: BI+SS+NS-WeM5, 132 Donath, M.: MI-WeM1, 135 Donegan, J.: HI+AS+BI+NS-ThM9, 158 Dong, C.: NS-ThP14, 178 Dong, H.: EM+TF+OX+GR-MoM5, 84; EMTuM3, 103 Dong, Y.: SS-ThM5, 161 Dongare, A.D.: TF+AS-TuA7, 120 Donnelly, V.M.: PS1-TuA10, 117; PS2MoA1, 97; PS2-TuA3, 118; PS2-WeA11, 148; PS-MoM8, 88; PS-ThP18, 178 Doris, B.: EL+TF+AS+EM+SS+PS+EN+NMMoM9, 83 Dornstetter, J.-C.: EL+TF+AS+EM+SS+PS+EN+NMMoM3, 83 Doubina, N.: SS-TuP14, 129 Doudin, B.: GR+EM+ET+NS+TF-MoA7, 94 Dougherty, D.B.: GR+AS+BI+PS+SSWeM10, 134; GR+AS+NS+SP+SSTuA11, 115; GR+EM+ET+MS+NSFrM8, 185; GR-ThP11, 176; MI+OXWeA11, 147 Douglas, E.A.: EM-ThP2, 175 Dowben, P.A.: AC+TF+SS+MI-MoA1, 91; AC+TF+SS+MI-MoA7, 91; GR+EM+ET+NS+TF-MoA7, 94; MI+OX-WeA10, 147; SS-TuP33, 129 Downey, B.P.: EM+OX-WeA8, 144 Dowsett, D.: HI+AS+NS-WeA10, 146
Draper, R.: BI-TuP13, 125; NS+AS+SS+SPWeM2, 136 Draude, F.: AS-TuP1, 124; BI-TuP12, 125 Drayman-Weisser, T.: TF-MoM3, 89 Drews, J.: EM+SS+AS+NS-ThM3, 155 Driskell, J.D.: TF+SE+NS-WeM12, 139 Driskill-Smith, A.: MI+OX-WeA7, 147 Droubay, T.C.: MI-ThP4, 177 Drube, W.: AS+TF+VT-FrM3, 183 Dsouza, R.: AS-WeM6, 132 Du, S.X.: GR-ThP12, 176 Du, Y.G.: IS+AS+OX+ET-WeM2, 135; OXTuP5, 127; SS-TuM5, 109 Duan, X.: GR+EM+ET+MS+NS-FrM1, 185 Dubacheva, G.V.: BI+SS+NS-WeM10, 132 Dubey, M.D.: GR+EM+ET+MS+NS-FrM8, 185 Dubois, P.: PS1-TuA8, 117 Dubruel, P.: MN+AS-MoM10, 85 DuChene, J.: EN+SS-FrM4, 184 Dudis, D.: SE+NS-MoA11, 97 Dudney, N.: EN+TF-WeA1, 144 Duenow, J.: TF+AS-WeA10, 151 Duerig, U.: NS+SP-MoA2, 95 Dürr, M.: AS-ThM10, 155 Dufour, T.: PS+TC-WeM12, 136; PS-ThP2, 178; PS-ThP31, 179 Dugger, M.T.: LB+EM+GR+MN+TR-WeA1, 146 Duke, A.: SS-WeA3, 150 Dumont, G.: MN-TuP3, 126 Dunham, B.M.: VT+AS+SS-WeM2, 140; VT-TuA11, 121 Dunin-Borkowski, R.E.: EM-ThM11, 156 Dunn, B.: EN+NS-ThM6, 156; EN+TFWeA9, 144 Dunn, S.: PS-ThP16, 178 Durakiewicz, T.: AC+MI+SS+TF-MoM8, 82 Durickovic, B.: VT-TuA3, 121; VT-TuP6, 130 Durkaya, G.: EM-ThP6, 175 Durstock, M.F.: EN+NS-ThM9, 156 Dussarrat, C.: PS-WeM3, 137 Dussart, R.: MN+AS-MoM6, 85; PS+EMMoM3, 87; PS1-ThM2, 160; PS1-ThM3, 160 Dussault, L.: NM+NS+MS+EM-MoA6, 95 Dutta, M.: EN+AS-ThA6, 167 Dutta, P.: EN+TF-TuA8, 114 Duzik, A.: SS-TuP34, 129
— E —
Ealet, B.: GR+EM+NS+SS+TF-ThA6, 169 Eastman, J.A.: IS+AS+OX+ET-WeM3, 135 Eastman, P.Y.: AS+NS+SS+TF-WeA9, 143 Easton, C.D.: MB+BI-ThM3, 158 Ebert, P.: EM+TF+AS-ThA10, 167; EMThM11, 156 Economou, D.J.: PS1-TuA10, 117; PS2MoA1, 97; PS2-WeA11, 148; PS-MoM8, 88; PS-ThP18, 178 Eddy, Jr., C.R.: EM+OX-WeA8, 144; EM+TF+AS-ThA6, 167; EM+TF+OX+GR-MoM9, 84; GR+AS+BI+PS+SS-WeM9, 134; GR+AS+EM+MI+MN-TuM1, 105; GR+AS+NS+SP+SS-TuA9, 115; GR+EM+ET+MS+NS-FrM3, 185; GR+EM+ET+MS+NS-FrM5, 185; GR+EM+ET+NS+TF-MoA1, 94; GR+EM+NS+PS+SS+TF-MoM1, 85; GR+EM+NS+PS+SS+TF-MoM3, 85; GR-ThP9, 176; SS+EM-WeA1, 149; TF+NS+EM-ThM1, 163 Eden, J.G.: PS+EM-MoM1, 87 Ederth, T.: MB+BI-ThA3, 169 Edgar, J.H.: EM+TF+OX+GR-MoM9, 84 Edlmayr, V.: SE+NS-MoM9, 88
Edmonds, M.: AS-TuP21, 124; SP+AS+BI+ET+MI+NM+NS+SS+TFWeM6, 137 Edwards, P.R.: AC+TF+SS+MI-MoA9, 91 Egan, T.F.: BN+AS-WeA12, 143 Eggenspiele, D.: EM+TF-WeM11, 133 Eigenfeld, N.: TR+SE-WeM10, 140 Eiliat, H.: TR+SE-WeM6, 140 Eisele, H.: EM+TF+AS-ThA10, 167 Eizenberg, M.: LB+EM+GR+MN+TRWeA12, 146 Ek, S.: SE+NS-MoM10, 88 Ekinci, Y.: HI+AS+BI+NS-ThM11, 158 Eklund, P.: VT-TuM5, 110 Elam, J.W.: IS+AS+SS+EN-TuM9, 105; TC+EM+AS+TF+EN-ThM6, 162; TF+EN-MoA1, 98 Eldridge, D.: MB+BI-ThA4, 169 Elferink, F.H.: PS-ThP15, 178 El-Khatib, S.: OX+EM+MI+NS+TF-MoM10, 87 El-Khoury, P.Z.: SP+AS+BI+ET+MI+NSTuA3, 119 Ellefson, R.: VT-MoA7, 99 Eller, M.: AS-ThM5, 155 Elliman, R.G.: LB+EM+GR+MN+TR-WeA7, 146 Ellingsworth, E.: MI+OX-WeA2, 147 Elliott, S.: TF-TuM3, 109 Elliston, R.: PS2-TuM10, 108 Elman, N.M.: MN-MoA11, 94 Elmquist, R.: LB+EM+GR+MN+TR-WeA10, 146 Elswick: EW-TuM7, 104 Emam, M.: EM-ThM4, 156 Emery, J.D.: GR+AS+BI+PS+SS-WeM1, 134; GR+AS+NS+SP+SS-TuA9, 115 Endo, K.: EM-ThM1, 156 Engel, L.: MN+AS-MoM10, 85; MN-MoA8, 94 Engelhard, M.: AS-TuP17, 124; TF+AS+SSThA11, 171 Engelmann, S.: PS1-ThM12, 160; PS-MoM2, 88; PS-WeM10, 137 Engeln, R.: EN+PS-WeM3, 133; PS+TCWeM2, 136 Engstrom, J.R.: IS+AS+BI+ET+GR+NSTuA2, 116 Enomoto, T.: PS-ThP16, 178 Enta, Y.: GR+EM+NS+PS+SS+TF-MoM10, 85 Erdemir, A.: TR+BI-TuM9, 110 Eriguchi, K.: PS2-TuA10, 118; PS2-TuA12, 118; PS-ThP20, 179 Erkens, I.J.M.: TF-TuM11, 109 Ernst, K.-H.: SS-ThM6, 161; SS-TuM9, 109 Ershov, M.V.: SE+NS-MoA7, 97 Eryilmaz, O.L.: TR+BI-TuM9, 110 Escamilla, R.: SS-TuP10, 129 Espinosa-Magaña, F.: AS-TuP15, 124 Esquinazi, P.: GR+AS+EM+MI+MN-TuM9, 105 Evans, R.A.: BI-MoM1, 83; BI-MoM5, 83 Everitt, H.O.: NM+AS+MS-MoM5, 86; TF2TuA1, 120 Ewin, J.J.: TR-TuA9, 121 Ewing, D.: TF2-TuA11, 120 Exarhos, A.L.: GR+AS+EM+MI+MN-TuM2, 105 Exarhos, S.A.: PS-ThP21, 179 Eypert, C.: TC-ThP2, 180
— F —
Facchetti, A.: TC+EM+AS-WeA1, 150 Facsko, S.: SE+NS-MoM2, 88 Fadida, S.: LB+EM+GR+MN+TR-WeA12, 146 Fadley, C.S.: MI+EN+BI-TuA11, 116; MI+OX-WeA1, 147 Fager, H.: TF+NS+EM-ThM12, 163
193
Faggin, M.F.: NS-ThM9, 159 Fahey, A.J.: AS+NS+SS+TF-WeA7, 143 Fairley, N.: AS+BI-TuM12, 102 Fan, C.-H.: PS-ThP45, 179 Fan, X.: BI+SS+NS-WeM2, 132; MNMoA10, 94 Fanelli, F.: PS+TC-WeM5, 136 Fanz, S.: TF-ThP17, 180 Faradzhev, N.S.: SS-TuM3, 109 Farmer, B.L.: GR+AS+BI+PS+SS-WeM6, 134 Fartmann, M.: TF+AS+SS-ThA4, 171; TFThP14, 180 Faubel, M.: SS-ThA2, 171 Faulkner, C.C.: HI+AS+BI+NS-ThM9, 158 Fauzi, M.E.: EN+PS-WeM11, 133; PS2ThM10, 160 Favia, P.: AS-ThM6, 155 Fazel, K.: AS-TuP27, 124 Fearing, R.S.: TR+BI-TuM1, 110 Fears, K.: BI+AS-TuA4, 113 Fedchak, J.A.: VT-MoA1, 99; VT-MoM9, 90 Fedorov, A.: GR-ThP3, 176 Feenstra, R.: GR+AS+NS+SP+SS-TuA10, 115 Feigelson, B.: GR+AS+EM+MI+MN-TuM1, 105 Feldman, Y.: NS+AS+SS+SP-WeM4, 136 Felhofer, J.L.: EL+TF+BI+AS+EM+SSMoA3, 92 Feliciano, D.M.: EN+NS-MoM6, 84 Felix, V.: PS+EM-MoM3, 87 Feng, G.: TF+AS-TuA1, 120 Feng, X.F.: SS-TuP37, 129 Feng, X.-L.: MN+AS-MoM1, 85 Fenineche, N.: AS-TuP25, 124 Fenter, P.: GR+AS+BI+PS+SS-WeM1, 134 Ferekides, C.S.: EN+TF-TuM1, 104 Ferguson, G.S.: EL+TF+BI+AS+EM+SSMoA10, 92 Ferguson, I.: EM+TF+AS-ThA11, 167; EM+TF+AS-ThA9, 167; EM-ThP6, 175 Ferguson, J.D.: SS+EM-WeA1, 149 Fernandez, M.-C.: AS-MoM4, 82 Fernandez-Torre, D.: SP+AS+BI+ET+MI+NS-TuA11, 119 Fernsler, R.: PS1-TuM12, 107; PS-ThP40, 179 Ferranti, D.: HI-ThP3, 177 Ferreira, P.: EM-TuA7, 114 Ferrighi, L.: SS-ThM5, 161 Ferris, R.J.: BI+SS+NS-WeM9, 132 Feurprier, Y.: PS-ThP1, 178; PS-WeM4, 137 Feygelson, B.N.: GR-ThP9, 176 Figueroa, J.J.: TF+EM+SS-ThA11, 172 Filippov, S.V.: SE+NS-MoA7, 97 Filler, M.: NS+EN-TuM4, 107; NS-WeA11, 147 Finlay, J.: BI-TuP16, 125 Firrincelli, A.: EM+TF+OX+GR-MoA1, 93 First, P.N.: GR+AS+NS+SP+SS-TuA3, 115 Fischer, P.: MI+SP+AS-ThM11, 159 Fisher, E.R.: PS2-WeA7, 148; PS-ThP19, 178; SE+NS-MoA6, 97 Fisher, G.L.: AS-WeM12, 132 Fitzgerald, E.: EM+MI-ThA3, 166 Fitz-Gerald, J.M.: TF+MI-WeA4, 151 Fitzmorris, B.C.: TF+SE+NS-WeM3, 139 Flater, E.E.: TR+SE-WeM10, 140 Fleetwood, D.M.: EM+SS+AS+NS-ThM11, 155 Fleischauer, M.D.: TF+SE+NS-WeM11, 139 Fleurence, A.: TF+AS-WeA8, 151 Fleutot, B.: SS-WeA11, 150 Flitsiyan, E.: EM-ThP1, 175 Flood, A.: SS-MoA3, 98 Floreano, L.: SS+OX-WeM6, 138 Flores, F.: ET+SS+GR+SP-FrM4, 184 Flores, M.: SS-TuP10, 129; TR-TuP6, 130
Author Index
Flores-Martinez, M.: TR-TuP5, 130 Floro, J.A.: TF+MI-WeA4, 151 Foley, E.T.: NS-ThP3, 178 Folkman, C.M.: IS+AS+OX+ET-WeM3, 135 Fong, A.: PS-WeM12, 137 Fong, D.D.: IS+AS+OX+ET-WeM3, 135 Foreman, J.: NM+AS+MS-MoM5, 86 Fortunelli, A.: SS+OX-WeM12, 138 Foss, M.: BI+SS+NS-WeM1, 132; BIMoM11, 83; BI-MoM2, 83; BI-TuP1, 125 Fouchier, M.: PS-ThP5, 178; PS-ThP7, 178 Foussekis, M.: EM+TF+AS-ThA4, 167 Fowlkes, J.D.: NS+SP-MoA4, 95; TF+EM+SE+NS-ThM3, 162 Fox, D.: HI+AS+BI+NS-ThM9, 158 Fox, J.R.: MN-MoA6, 94; MN-TuM6, 106 Fox-Lyon, N.: PS2-WeA11, 148 Fracassi, F.: PS+TC-WeM5, 136 Fradet, M.: PS1-WeA9, 148 França, D.: EM-ThP8, 175 Frank, K.: NS+AS+SS+SP-WeM3, 136 Frank, M.M.: EM+TF+OX+GR-MoA7, 93 Franke, E.: PS-MoM1, 88 Franke, K.J.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM4, 137 Franquet, A.: AS-ThM6, 155 Franssila, S.: TF+NS+EM-ThM10, 163 Franz, G.: PS1-WeA10, 148 Franz, R.: SE+PS-TuM10, 108 Franz, S.: MN-TuP7, 126 Freeman, M.R.: MN+AS-MoM9, 85; MNTuM5, 106; MN-TuM9, 106 Freitas, Jr., J.A.: EM+TF+AS-ThA6, 167 French, B.: EM-TuA9, 114; GR+EM+NS+SS+TF-ThA1, 169 French, M.: GR+EM+NS+SS+TF-ThA1, 169 Frenkel, A.I.: SS-TuP27, 129 Frenzer, P.: EM-ThP1, 175; EM-ThP2, 175 Freund, H.J.: NS-ThM3, 159 Friddle, P.: PS-MoM1, 88 Fridmann, J.: LB+EM+GR+MN+TR-WeA7, 146 Fritz, E.C.: VT-TuA9, 121 Froehner, S.C.: BN+AS-WeA9, 143 Fromm, F.: GR+EM+NS+PS+SS+TFMoM10, 85 Fruchart, O.: GR+AS+EM+NS+SS-WeA10, 145 Fu, J.: NS+SP-MoA8, 95 Fu, S.: TC+EM+AS-WeA9, 150 Fu, T.-Y.: HI+AS+NS-WeA8, 146 Fuchs, E.: SS-TuP21, 129 Fuentes, A.: SS-MoA11, 98 Fuentes-Cabrera, M.: SS-WeM4, 138; TF+EM+SE+NS-ThM3, 162 Fujikawa, Y.: IS+AS+OX+ET-WeM10, 135 Fujishima, A.: SS-TuP18, 129 Fujita, D.: HI+AS+BI+NS-ThM12, 158 Fujita, T.: EN-ThP7, 175 Fujitani, T.: SS-TuP29, 129; SS-TuP30, 129 Fukasawa, M.: PS2-ThM4, 160; PS2-TuA9, 118; PS-ThP14, 178; PS-ThP20, 179 Fukidome, H.: GR+EM+NS+PS+SS+TFMoM10, 85 Fukutani, K.: SS-MoA9, 98; SS-TuP33, 129 Fukuyama, A.: EN+TF-TuA12, 114 Fuller, N.C.M.: PS1-ThM12, 160; PS-MoM2, 88; PS-MoM6, 88; PS-WeM10, 137 Funk, M.: PS1-TuM11, 107; PS1-WeA12, 148 Fuoss, P.H.: IS+AS+OX+ET-WeM3, 135
— G —
Gaddam, S.: PS2-WeA8, 148 Gaddis, R.L.: MB+BI-ThM6, 158 Gaddy, B.: EM+TF+AS-ThA1, 167 Gahan, D.: PS1-WeA1, 148 Gai, Z.: SS-WeM4, 138
Author Index
Gajdardziska-Josifovska, M.: GR+AS+NS+SP+SS-TuA2, 115; SSTuP3, 129 Galatage, R.V.: EM-TuM3, 103 Galatsis, K.: EM+SS+AS+NS-ThM11, 155 Galhenage, R.P.: SS-WeA3, 150 Gall, D.: TF+SE+NS-WeM6, 139 Galla, S.: AS-TuP1, 124 Galoppini, E.: OX+SS+TF+MI-MoA6, 96 Galtayries, A.: MB+BI-ThM2, 158 Galtsyan, E.: EN+TF-TuA8, 114 Gamage, S.D.: EM+TF+AS-ThA11, 167; EM+TF+AS-ThA9, 167; EM-ThP5, 175; EM-ThP6, 175 Gaman, C.: PS1-TuM9, 107 Gamble, L.J.: BN+AS-WeA4, 143 Ganesh, K.: EM-TuA7, 114 Gao, H.-J.: ET+SS+GR+SP-ThA1, 168; GRThP12, 176 Gao, J.: SS-WeA10, 150 Gao, Y.: EN+TF-TuA8, 114; GR+EM+ET+NS+TF-MoA10, 94 Garces, N.Y.: EM+OX-WeA8, 144; EM+TF+OX+GR-MoM9, 84; GR+AS+EM+MI+MN-TuM1, 105; GR+EM+ET+MS+NS-FrM5, 185; GR+EM+NS+PS+SS+TF-MoM1, 85; GR+EM+NS+PS+SS+TF-MoM3, 85 Garcia, B.: EW-TuA5, 115 Garcia, C.D.: EL+TF+BI+AS+EM+SSMoA3, 92 Garcia, S.: TR+BI-TuM5, 110 Gardiner, J.: BI-MoM6, 83 Gargiulo, F.: GR+AS+NS+SS-ThM5, 157 Garino, T.J.: AS-TuP5, 124 Garramone, J.: EM+NS-FrM5, 183 Garren, J.M.: TF+SE+NS-WeM12, 139 Gartstein, Yu.N.: EL+TF+BI+AS+EM+SSMoA2, 92; EN+TF-WeA7, 144 Gaskill, D.K.: GR+AS+BI+PS+SS-WeM9, 134; GR+AS+NS+SP+SS-TuA9, 115; GR+EM+ET+MS+NS-FrM3, 185; GR+EM+ET+MS+NS-FrM5, 185; GR+EM+ET+NS+TF-MoA1, 94; GR+EM+NS+PS+SS+TF-MoM1, 85; GR+EM+NS+PS+SS+TF-MoM3, 85; GR-ThP9, 176 Gassilloud, R.: NM+NS+MS+EM-MoA6, 95 Gates, G.: TF-MoM3, 89 Gates, S.M.: EM-TuA8, 114 Gaub, H.E.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM11, 137 Gautam, A.: GR+AS+NS+SS-ThM5, 157 Gazquez, J.: OX+EM+MI+NS+TF-MoM10, 87 Ge, Q.: SS-TuM10, 109 Gebbie, M.A.: BI+SS+NS-WeM5, 132 Gebhardt, C.R.: AS-ThM10, 155 Geidel, M.: NM+AS+MS-MoM4, 86 Geidobler, R.: AS+BI-TuM3, 102 Geisler, H.: EM-TuA11, 114 Geisse, N.: EW-TuM8, 104; SP+AS+BI+ET+MI+TF-WeA11, 149 Gellman, A.J.: SS-MoA6, 98; SS-ThM2, 161; SS-WeA11, 150 Gembocki, O.J.: NS+EN-TuM2, 107 Gemming, S.: SE+NS-MoM2, 88 Gengler, J.J.: SE-TuP3, 128 George, S.M.: TF+EN-MoA3, 98; TF2-TuA8, 120; TF-MoM10, 89 Gerber, T.: GR+AS+NS+SP+SS-TuA7, 115 Gessert, T.A.: EN+AS-ThA1, 167; EN+TFMoA1, 93; TF+AS-WeA10, 151 Ghafoor, N.: TF+NS+EM-ThM11, 163; TF+NS+EM-ThM12, 163 Gherardi, N.: PS+BI-MoA10, 96; PS+BIMoA11, 96; PS+TC-WeM6, 136
194
Ghodssi, R.: BI+SS+NS-WeM2, 132; MNMoA10, 94; TR-TuA11, 121 Ghorai, S.: IS+AS+BI+ET+GR+NS-TuA9, 116 Ghosh, S.: EM-ThM6, 156 Giannuzzi, L.A.: AS+BI-TuA10, 113 Giasson, S.: TR-TuA4, 121 Gibson, P.: VT-TuA3, 121; VT-TuP6, 130 Gielesen, W.L.M.: VT-TuA9, 121 Gierałtowski, A.: EW-WeL5, 142 Giessibl, FJ.: SP+AS+BI+ET+MI+TFWeA12, 149 Giewekemeyer, K.: IS-TuP4, 126 Gil, W.: VT-TuM11, 110 Gila, B.: LB+EM+GR+MN+TR-WeA7, 146 Gilles, M.K.: IS+AS+BI+ET+GR+NS-TuA9, 116 Gilley, K.: TR+SE-WeM5, 140 Gillich, T.: NS+EN+GR-TuA1, 117 Gilliland, D.: BI+SS+AS-TuM12, 103 Gilmore, I.S.: AS-MoA9, 91; AS-ThA2, 166; AS-ThM4, 155 Giner, I.: OX+SS+TF+MI-MoA11, 96 Ginting, E.: SS-TuP13, 129 Girard-Lauriault, P.-L.: AS+BI-TuM5, 102 Girshevitz, O.: OX+EM+MI+NS+TFMoM11, 87 Gizzo, V.: PS-ThP1, 178 Gladfelter, W.L.: TF-ThP10, 180 Glass, J.T.: EN+SS-FrM3, 184 Glattauer, V.: BI-MoM5, 83; BI-MoM6, 83 Głazek, W.: EW-WeL5, 142 Gleason, K.K.: EM+SS+AS+NS-ThM4, 155; EM+TF-WeM11, 133; TF-WeM5, 139 Glück, B.: MN-TuP3, 126 Go, D.B.: PS+EM-MoM11, 87 Godoy Filho, J.: EM-ThP7, 175 Goeke, R.S.: VT-MoM10, 90 Goertz, M.P.: TF-TuM9, 109 Gold, J.: BI-MoA3, 92 Goldman, R.S.: EM+SS+AS+NS-ThM13, 155 Goldoni, A.: AC+TF+SS+MI-MoA3, 91 Goldsman, N.: EM+OX-WeA9, 144 Goldstein, C.: TF+AS-TuA12, 120 Golibrzuch, K.: SS-MoM4, 89 Gollub, S.L.: SS+OX-WeM4, 138; SS-TuP5, 129 Gölzhäuser, A.: HI+AS+BI+NS-ThM11, 158; HI+AS+BI+NS-ThM5, 158; HI-ThP1, 177 Gomella, A.: SE-TuP4, 128 Gonçalves, A.: AC+TF+SS+MI-MoA6, 91 Gong, C.: GR+AS+EM+NS+SS-WeA1, 145 Gong, Q.: IS-TuP2, 126 Gonon, P.: OX-TuP2, 127; TF+MI-WeA7, 151 Gonzalez, C.M.: HI-ThP3, 177 Gonzalez, I.J.: AS-TuP28, 124 González-Díaz, J.B.: MI+EN+BI-TuA12, 116 Gonzalez-Mancera, A.: BI-TuP6, 125 Gorai, P.: SS+EM-WeA7, 149 Gorman, B.P.: AS+BI-TuA10, 113 Gorniak, T.: BN+AS-WeA11, 143; IS-TuP4, 126 Gorobey, V.: VT-MoA1, 99 Gorovikov, S.: AC+TF+SS+MI-MoA3, 91 Goswami, S.: MB+BI-ThM9, 158 Gotlib-Vainshtein, K.: OX+EM+MI+NS+TFMoM11, 87 Goto, M.: MN-TuP5, 126 Gottscho, R.: PS2-TuM3, 108 Götzen, J.: SP+AS+BI+ET+MI+NS-TuA10, 119 Goubert, G.: SS-ThM5, 161 Gougousi, T.: TF-ThP9, 180 Govorkov, A.V.: EM-TuM9, 103 Gowda, M.H.: GR+AS+EM+MI+MN-TuM1, 105
Grabowski, K.: AS-TuP27, 124 Grady, M.: SE+NS-MoA10, 97 Graef, W.A.A.D.: PS1-WeA7, 148 Graham, D.J.: BN+AS-WeA9, 143 Graham, S.: GR+EM+ET+MS+NS-FrM9, 185; GR-ThP10, 176 Graham, W.S.: PS1-ThM12, 160; PS-MoM2, 88 Grampeix, H.: EM+TF+OX+GR-MoA9, 93; NS-ThM10, 159; TF+MI-WeA7, 151 Granados, B.: TF-TuM6, 109 Grånäs, E.: GR+AS+NS+SP+SS-TuA7, 115; IS+AS+SS+EN-TuM12, 105 Granier, A.: PS2-WeA10, 148 Grant, J.T.: SE+PS-TuM9, 108; TF+AS+SSThA10, 171 Grant-Jacob, J.A.: SE+NS-MoA3, 97 Grassian, V.: NM+AS+MS-MoM10, 86 Grätzel, M.: IS+AS+SS+EN-TuM3, 105 Graur, I.: MN-TuP1, 126 Graves, D.B.: PS+BI-MoA2, 96; PS+BIMoA6, 96; PS2-WeA11, 148; PS2WeA12, 148; PS-WeM6, 137 Gray, A.X.: MI+OX-WeA1, 147 Greeley, J.: IS+AS+SS+EN-TuM9, 105; TF+EN-MoA1, 98 Green, M.: EW-WeL1, 142 Greene, A.: EM+TF+OX+GR-MoM3, 84 Greene, J.E.: TF+AS-TuA4, 120; TF+NS+EM-ThM12, 163 Greer, F.: TF-MoM5, 89 Gregorkiewicz, T.: EN+PS-WeM4, 133 Gregory, C.W.: EN+NS-MoM11, 84 Grehl, T.: TF+AS+SS-ThA4, 171; TF-ThP14, 180 Greiner, M.T.: OX+SS+TF+MI-MoA7, 96 Gretener, C.: TF+AS-WeA3, 151 Griesser, H.J.: PS+BI-MoA7, 96; PS1-TuA3, 117 Griffin, T.M.: PS-ThA10, 170 Grigoras, K.: TF+NS+EM-ThM10, 163 Grill, A.: EM-TuA8, 114; GR+AS+NS+SP+SS-TuA11, 115 Grilley, R.: PS-ThA4, 170 Gross, L.: SP+AS+BI+ET+MI+NS-TuA1, 119 Grueneis, A.: GR-ThP3, 176 Grundmeier, G.: OX+SS+TF+MI-MoA11, 96; SS-ThA9, 171; TF+AS+SS-ThA1, 171 Grunze, M.H.: BI+SS+AS-TuM2, 103; BN+AS-WeA11, 143; MB+BI-ThA3, 169 Gu, L.: IS+AS+OX+ET-WeM5, 135 Gu, Y.: ET+NS+EM-ThM12, 157 Guallar-Hoyas, C.: IS+AS+BI+ET+GR+NSTuA3, 116 Gudimenko, E.: PS1-TuM3, 107 Guedj, C.: NS-ThM10, 159 Guerente, L.: BI+SS+NS-WeM10, 132 Guerrero, J.: EM+TF+OX+GR-MoA9, 93 Guetschow, P.: VT-TuA3, 121; VT-TuP6, 130 Guillorn, M.A.: PS1-ThM12, 160 Guisinger, N.: SP-TuP2, 128 Gumuslu, G.: SS-WeA11, 150 Gunlycke, D.: GR+AS+NS+SS-ThM3, 157; GR+AS+NS+SS-ThM4, 157 Guo, H.X.: HI+AS+BI+NS-ThM12, 158 Guo, J.H.: GR+EM+ET+NS+TF-MoA11, 94; IS+AS+SS+EN-TuM3, 105 Guo, X.: NS+EN-TuM11, 107 Guo, Z.-P.: SS-TuP9, 129 Gupta, A.: AS-ThA7, 166; NS-ThM9, 159 Gupta, R.: PS-WeM3, 137 Gupta, S.: AS-TuP23, 124; BI-MoM10, 83; TF+EM+SE+NS-ThM4, 162; TF+MIWeA3, 151; TF+SE+NS-WeM10, 139 Gupta, V.: TF-MoM4, 89 Gutmann, S.: ET+SS+GR+SP-ThA11, 168
Guttmann, P.: BP+AS-SuA3, 78 Gwo, S.: EM+TF+AS-ThA10, 167
— H —
Ha, J.: MI-WeM11, 135; MI-WeM2, 135 Ha, T.: VT-TuP10, 130; VT-TuP7, 130 Haag, J.: EN+NS-ThM9, 156 Haas, H.: VT-TuM4, 110 Haasch, R.T.: TC+EM+AS+TF+EN-ThM6, 162 Haase, A.: AS-TuP1, 124 Haass, M.: PS1-WeA2, 148; PS-MoM6, 88 Habenicht, B.: GR+AS+EM+NS+SS-WeA11, 145 Haberer, D.: GR-ThP3, 176 Habermann, D.: NM+NS+MS+EM-MoA9, 95 Hacker, C.A.: TF+EM+SS-ThA6, 172 Hackett, J.B.: VT+AS+SS-WeM9, 140 Hadj Nacer, M.: MN-TuP1, 126 Hadjipanayis, G.C.: MI-ThP2, 177 Haehner, G.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM9, 137 Hagenhoff, B.: TF+AS+SS-ThA4, 171; TFThP14, 180 Hager, G.: AS+NS+SS+TF-WeA7, 143 Hagiwara, A.: SS-TuP8, 129 Hahn, D.W.: TR+SE-WeM9, 140 Hahn, J.H.: BI-TuP5, 125 Hähner, G.: SP+AS+BI+ET+MI+TF-WeA7, 149 Hakanoglu, C.: SS+EN+OX-ThM10, 161; SS-TuP22, 129 Halbur, J.C.: TF2-TuA1, 120; TF-MoM9, 89 Halevi, B.: IS+AS+SS+EN-TuM6, 105 Hall, C.J.: PS1-TuA3, 117 Hall, S.: EN+NS-MoM11, 84 Halls, M.D.: TF+NS+EM-ThM2, 163 Hamaguchi, S.: PS1-ThM5, 160; PS2-TuA2, 118; PS2-TuA4, 118; PS2-TuA9, 118; PSThP6, 178 Hamers, R.J.: SS-ThM9, 161 Hammad, M.: BI-MoA10, 92 Hammer, B.: SS-ThM5, 161 Hammond, J.S.: AS-ThA3, 166; AS-WeM12, 132; EN+AS-ThA4, 167; NS-ThM12, 159 Han, C.B.: SS-WeM4, 138 Han, L.: EN+PS-WeM10, 133 Han, S.M.: EM-ThM12, 156; EM-ThM6, 156; EN+NS-MoM10, 84 Han, Y.: SS+NS-TuA11, 119 Han, Y.G.: PS-ThP38, 179 Han, Y.-K.: SS-ThM12, 161 Handa, H.: GR+EM+NS+PS+SS+TFMoM10, 85 Hanke, M.: BI-TuP14, 125 Hänke, T.: EW-TuL6, 111 Hanley, L.: BI+AS-TuA8, 113; EN-ThP3, 175 Hannon, J.B.: GR+EM+NS+PS+SS+TFMoM8, 85 Hanrahan, B.: TR-TuA11, 121 Hanrath, T.: EN+NS-MoM5, 84 Hansen, R.: MN+AS-MoM4, 85 Hanus, J.: NS+EN+GR-TuA2, 117 Hao, Y.: GR+AS+NS+SP+SS-TuA11, 115 Hapala, P.: ET+SS+GR+SP-ThA9, 168; NSMoM5, 86 Harada, K.: SS-TuP32, 129 Harada, Y.: GR+AS+EM+NS+SS-WeA12, 145 Harari, I.: MN+AS-MoM10, 85 Harker, M.: LB+EM+GR+MN+TR-WeA3, 146 Harl, R.R.: SS+OX-WeM4, 138; SS-TuP5, 129 Harrell, W.R.: SS+OX-WeM3, 138 Harris, K.L.: TR+SE-WeM9, 140 Harrison, J.A.: TR-TuA8, 121
195
Harriss, J.E.: SS+OX-WeM3, 138 Hartig, M.: PS2-TuM9, 108 Hasegawa, H.: EM-TuM1, 103 Hashemian, M.: EN-ThP9, 175; SS-MoM10, 89; SS-MoM11, 89; SS-TuP16, 129 Hashimoto, N.: EM+TF+AS-ThA12, 167 Haspert, L.C.: EN+AS-ThA3, 167 Hasselbrink, E.: SS-MoM3, 89; SS-TuP24, 129 Hassibi, A.: EM+OX-WeA1, 144 Hatakeyama, R.: PS+BI-MoA8, 96; PS1ThM4, 160 Hatch, R.C.: MI-WeM1, 135 Hauge, R.: BN+AS-WeA12, 143 Havela, L.: AC+TF+SS+MI-MoA6, 91 Havelund, R.: AS-ThA2, 166; AS-ThM4, 155 Havercroft, N.: AS-MoA4, 91; AS-ThM11, 155; AS-WeM11, 132 Haverkamp, H.: NM+NS+MS+EM-MoA9, 95 Hawley, C.J.: NS+EN-TuM6, 107 Hayashi, H.: SS-TuP33, 129 Hayashi, T.: PS2-MoA7, 97; PS-ThP25, 179 Hayashida, M.: HI+AS+BI+NS-ThM6, 158 Hayat, A.: EN+TF-MoA11, 93 Haydell, M.: GR+AS+NS+SS-ThM3, 157 Hayden, B.E.: SS+NS-TuA9, 119 Hayes, S.L.: AC+EN-TuM1, 102 Haylock, D.: BI-MoM5, 83 He, C.: OX+EM+MI+NS+TF-MoM10, 87 He, G.: GR+AS+NS+SP+SS-TuA10, 115 He, J.: PS2-TuM11, 108 He, X.: MI+OX-WeA10, 147 He, Y.-P.: EN+NS-ThM10, 156 Heald, S.M.: SS+OX-WeM5, 138 Hebard, A.F.: GR+EM+ET+MS+NS-FrM11, 185; LB+EM+GR+MN+TR-WeA7, 146 Hedrick, J.L.: NS+SP-MoA2, 95 Heinz, T.F.: GR+AS+EM+MI+MN-TuM5, 105 Hell, S.W.: BP+AS-SuA5, 78 Hellman, F.: MI+OX-WeA1, 147 Hemminger, J.C.: EN+SS-FrM5, 184; SS+NS-TuA3, 119; SS-ThA1, 171; SSThA2, 171; SS-WeM11, 138; SS-WeM12, 138; TF+AS-WeA2, 151 Hemthavy, P.: MN-TuP9, 126 Henager Jr, C.H.: HI-ThP2, 177 Henager, C.H.: NS-ThP13, 178 Henderson, C.: EL+TF+BI+AS+EM+SSMoA6, 92; PS2-MoA8, 97 Henderson, C.L.: GR+EM+ET+MS+NSFrM9, 185; GR-ThP10, 176 Henderson, M.A.: EN+SS-FrM2, 184; SS+EN+OX-ThM11, 161; SS-TuM5, 109 Hendricks, J.H.: VT-MoM6, 90 Hendryx, C.G.: TF-ThP4, 180 Henry, F.: SE+NS-MoA4, 97 Henzler, K.: BP+AS-SuA3, 78 Heo, D.: PS2-TuM11, 108 Heo, S.: AS-TuP22, 124 Heo, Y.K.: NS-ThP8, 178 Herdiech, M.W.: OX+SS+TF+MI-MoA2, 96 Herman, G.S.: TC+EM+AS+TF+EN-ThM5, 162 Herman, J.: EM-ThP8, 175 Hermkens, P.M.: TF-TuM5, 109 Hernandez, S.: GR-ThP9, 176 Hernández, S.C.: GR+AS+BI+PS+SS-WeM9, 134; GR+EM+NS+PS+SS+TF-MoM1, 85 Hernandez, S.H.: TF+MI-WeA1, 151 Hernández-Hernández, A.: NS-MoM2, 86; TF-ThP16, 180 Hernández-Hernández, L.A.: NS-MoM2, 86; TF-ThP16, 180 Herpers, A.: AS-ThA10, 166 Herrera, V.: BI+SS+NS-WeM6, 132
Author Index
Herrera-Gomez, A.: AS-MoM5, 82; ASTuP15, 124; AS-TuP16, 124; EM+TF+OX+GR-MoA9, 93 Herrero-Albillos, J.: MI+OX-WeA1, 147 Herring, A.M.: EN+NS-ThM1, 156 Hersam, M.C.: GR+AS+BI+PS+SS-WeM1, 134; GR+AS+BI+PS+SS-WeM3, 134; GR+AS+NS+SP+SS-TuA9, 115; NSThP3, 178 Hershkowitz, N.: PS2-WeA4, 148 Herzing, A.: AS+BI-TuA9, 113 Hettiarachchi, C.: EN+NS-MoM6, 84 Hetzer, D.: PS-ThP16, 178 Heyde, M.: NS-ThM3, 159 Heylings, J.: BN+AS-WeA10, 143 Heyns, M.: EM+TF+OX+GR-MoA1, 93 Hicks, R.F.: PS+EM-MoM9, 87 Hiebert, W.K.: MN+AS-MoM9, 85; MNMoA7, 94; MN-TuM5, 106; MN-TuM9, 106; NS-ThP2, 178 Highland, M.J.: IS+AS+OX+ET-WeM3, 135 Hikita, Y.: OX+EM+MI+NS+TF-MoM3, 87 Hill, R.: PS-ThP34, 179 Hill, S.B.: SS-TuM3, 109 Hillhouse, H.W.: EN+TF-MoA3, 93 HIllion, F.: IS+AS+OX+ET-WeM11, 135 Hilpert, F.: PS2-TuA1, 118 Hines, M.: EM-ThP13, 175; NS-ThP12, 178 Hines, M.A.: NS-ThM9, 159 Hinkle, C.L.: EM+TF+OX+GR-MoA4, 93; EM-TuM3, 103 Hinkov, V.: TF+AS-TuA10, 120 Hirakawa, T.: NM-TuP2, 127 Hiramatsu, M.: GR+AS+NS+SS-ThM9, 157 Hiramatsu, T.: NM-TuP1, 127; NM-TuP2, 127; NM-TuP3, 127; TF-ThP12, 180 Hirano, A.: SE+PS-TuA8, 118 Hiraoka, K.: AS-ThM12, 155; AS-TuP3, 124; AS-TuP6, 124 Hirayama, H.: SS-MoA8, 98 Hirsch, B.: SS-MoA3, 98 Hirschmugl, C.: AS-WeM6, 132; GR+AS+NS+SP+SS-TuA2, 115; SSTuP3, 129 Hirvonen, J.: PS+TC-WeM11, 136 Hisamatsu, H.: VT-TuA1, 121 Hite, J.K.: EM+TF+AS-ThA6, 167; SS+EMWeA1, 149; TF+NS+EM-ThM1, 163 Hjort, M.: EM+MI-ThA6, 166; ET+NS+EMThM6, 157 Hla, S.-W.: NS-ThM1, 159 Hlaing, M.M.: MB+BI-ThA4, 169 Ho, A.: BI-TuP14, 125 Hobart, K.D.: GR-ThP9, 176 Hobbs, J.K.: SP+AS+BI+ET+MI+NS-TuA7, 119 Hockenbery, D.: BN+AS-WeA4, 143 Hodes, G.: ET+SS+GR+SP-FrM3, 184 Hoehne, R.: GR+AS+EM+MI+MN-TuM9, 105 Hoertz, P.: EN+SS-FrM3, 184 Hofer, W.A.: GR-ThP12, 176 Hoffman, D.: PS-ThA4, 170; PS-ThA6, 170 Hoffman, R.S.: EN+NS-MoM5, 84 Hofman, G.L.: AC+EN-TuM1, 102 Hofmann, P.: MI-WeM1, 135 Hofmann, T.: LB+EM+GR+MN+TRWeA10, 146 Hohlbauch, S.: EW-TuM8, 104; SP+AS+BI+ET+MI+TF-WeA11, 149 Hohle, C.: PS2-TuM12, 108 Holbrook, R.D.: AS+BI-TuA9, 113 Holland, J.: PS-MoM11, 88 Hollenstein, Ch.: PS-ThA3, 170 Hollerweger, R.: SE+NS-MoM6, 88 Holliday, K.S.: AC+EN-TuM10, 102 Holloway, P.H.: EM+TF-WeM9, 133; EMThP14, 175; NS-WeA2, 147 Holohan, A.: PS1-TuM9, 107
Author Index
Holzke, C.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM5, 137 Holzner, F.: NS+SP-MoA2, 95 Honda, M.: PS-ThP12, 178 Honda, T.: PS-ThP14, 178 Hone, J.C.: GR+AS+EM+MI+MN-TuM11, 105; GR+EM+ET+NS+TF-MoA10, 94; NS+EN-TuM11, 107 Hong, J.: TC+EM+AS+TF+EN-ThM12, 162 Hong, J.-S.: MN+AS-MoM8, 85 Hong, M.: PS2-ThM1, 160; SS+NS-ThA4, 170 Hong, M.S.: VT-TuP7, 130 Hong, S.: SS+NS-ThA9, 170 Hong, S.J.: EN-ThP8, 175 Hong, S.-Y.: SS-TuP2, 129 Hong, W.T.: IS+AS+SS+EN-TuM5, 105 Hong, Y.-L.: EM+TF+AS-ThA10, 167 Hook, A.L.: BI-MoA8, 92; MB+BI-ThM12, 158 Hook, D.J.: AS-TuP19, 124 Hooley, R.: SS-WeM2, 138 Hopkins, M.B.: PS1-WeA1, 148 Hopstaken, M.J.P.: EM+NS-FrM10, 183 Hopwood, J.: PS+EM-MoM5, 87 Hordagoda, M.: MI+OX-WeA9, 147; OX+EM+MI+NS+TF-MoM1, 87 Hori, M.: GR+AS+NS+SS-ThM9, 157; PS1TuM5, 107; PS2-MoA7, 97; PS2-ThM5, 160; PS2-TuA7, 118; PS2-WeA3, 148; PS-ThP14, 178; PS-ThP25, 179 Horibe, H.: PS2-TuA7, 118 Horie, T.: PS2-ThM3, 160 Horikoshi, R.: SE-TuP2, 128 Horn, K.: GR+EM+ET+NS+TF-MoA8, 94 Horowitz, S.B.: MN-MoA6, 94; MN-TuM6, 106 Horsfall, A.B.: GR+EM+NS+PS+SS+TFMoM1, 85 Horvath, B.: VT-MoA10, 99 Hosadurga, S.: EM-TuA8, 114 Hosemann, P.: SE+NS-MoM6, 88 Hoshino, K.: PS-ThP6, 178 Hoskinson, A.: PS+EM-MoM5, 87 Hosono, H.: TC+EM+AS+TF+EN-ThM3, 162 Hossain, M.Z.: NS+SP-MoA6, 95 Hossain, T.: EM+TF+OX+GR-MoM9, 84 Hou, J.B.: SS+NS-TuA11, 119 Hou, J.-L.: HI+AS+NS-WeA8, 146 Houssiau, L.: AS-MoA2, 91 Howe, B.M.: SE+NS-MoA11, 97; TF+NS+EM-ThM12, 163 Howe, J.: GR+EM+NS+PS+SS+TF-MoM3, 85 Howling, A.A.: PS-ThA3, 170 Hozumi, A.: SS-ThM1, 161 Hsiao, C.-N.: EM-ThP3, 175; IS-TuP1, 126; TF-ThP13, 180; VT-TuP5, 130 Hsieh, C.-H.: PS-ThP45, 179 Hsieh, C.J.: MN+AS-MoM11, 85 Hsiung, G.Y.: VT+AS+SS-WeM1, 140; VTTuA12, 121 Hsu, C.: ET+NS+EM-ThM12, 157 Hsu, C.C.: PS+BI-MoA1, 96; PS+EMMoM4, 87; PS-ThP22, 179; PS-ThP46, 179 Hsu, K.H.: VT-TuA12, 121 Hsu, K.W.: PS-ThP35, 179 Hsu, S.N.: VT-TuA12, 121 Hsueh, H.P.: VT-TuA12, 121 Hu, J.J.: TR+SE-WeM1, 140 Hu, L.: TF+EN-MoA6, 98 Hu, Q.: SP+AS+BI+ET+MI+TF-WeA9, 149 Hu, S.W.: SS+NS-TuA11, 119; SS-TuP37, 129 Hu, W.: EN+PS-WeM11, 133; PS2-ThM10, 160
196
Hu, X.: TF+EN-MoA7, 98 Hu, Y.: SP+AS+BI+ET+MI+TF-WeA8, 149 Hu, Y.C.: LB+EM+GR+MN+TR-WeA8, 146 Hu, Y.F.: AS+TF+VT-FrM1, 183 Hua, X.: PS2-TuM11, 108 Huang, C.: NS-ThP2, 178 Huang, E.: EM-TuA8, 114 Huang, J.: TF2-TuA9, 120 Huang, J.-H.: TF-ThP3, 180 Huang, L.W.: GR+EM+ET+NS+TF-MoA6, 94 Huang, M.Y.M.: AS+BI-TuA2, 113 Huang, Y.M.: AS+BI-TuA4, 113 Huang, Y.T.: VT-TuA12, 121 Huaranga, J.A.: TR-TuP4, 130 Hubault, C.: TF+AS-WeA8, 151 Hubbard, S.: EN+NS-MoM10, 84 Hubert, J.: PS+TC-WeM12, 136; PS-ThP2, 178; PS-ThP31, 179 Hubler, G.: AS-TuP27, 124 Hudak, S.: SE+PS-TuA3, 118 Hudson, E.: PS-WeM12, 137 Hübner, S.: PS1-WeA7, 148 Huerta, L.: SS-TuP10, 129; TR-TuP6, 130 Huffman, C.: PS-ThP34, 179 Huffman, E.: NS-ThM6, 159 Hughes, G.J.: AS-TuP23, 124; AS-TuP7, 124; EM-TuM5, 103 Hughes, T.P.: VT-MoM10, 90 Hughes, W.C.: SS-WeM10, 138 Hultman, L.: TF+AS-TuA4, 120; TF+ASTuA9, 120; TF+NS+EM-ThM11, 163; TF+NS+EM-ThM12, 163; TR+SEWeM4, 140 Hund, Z.M.: EM+TF-WeM12, 133 Hung, C.-C.: VT-TuP5, 130 Hunter, M.: NM+MS-TuM4, 106 Huo, S.: TR+BI-TuM2, 110 Huo, Y.J.: BI+AS-TuA10, 113 Hurley, P.K.: AS-TuP7, 124; EM-TuM5, 103 Hussein, R.: BI+SS+AS-TuM12, 103 Hussey, L.: EM+TF+AS-ThA1, 167 Hutton, S.: EW-TuL4, 111 Hutton, S.J.: AS+BI-TuM10, 102; AS+BITuM3, 102; AS+NS+SS+TF-WeA8, 143; AS-ThM1, 155; AS-TuP13, 124; ASTuP14, 124 Hwang, C.: AS+TF+VT-FrM3, 183; MIThP1, 177 Hwang, H.H.: AS-TuP2, 124; EN+NSMoM1, 84 Hwang, I.-S.: HI+AS+NS-WeA8, 146 Hwang, J.: MI+OX-WeA12, 147 Hyde, R.H.: MI+OX-WeA9, 147; OX+EM+MI+NS+TF-MoM1, 87
— I —
Iacobucci, S.: AC+TF+SS+MI-MoA3, 91 Ianno, N.J.: EL+TF+AS+EM+SS-TuP1, 125 Ide, T.: GR+EM+NS+PS+SS+TF-MoM10, 85 Idigoras, O.: MI+EN+BI-TuA12, 116 Igarashi, M.: EN+PS-WeM11, 133; PS2ThM10, 160 Iida, S.: AS+BI-TuM9, 102 Iijima, T.: HI+AS+BI+NS-ThM6, 158 Ikari, T.: EN+TF-TuA12, 114 Ikenaga, N.: EN-ThP12, 175 Ikezawa, S.: PS1-WeA3, 148 Ilic, B.: MN-MoA1, 94 Ilic, B.R.: MN-TuM10, 106; MN-TuM11, 106 Iliev, M.N.: PS1-TuA10, 117 Ilton, E.S.: SS+OX-WeM9, 138 Im, M.-Y.: MI+SP+AS-ThM11, 159 Imai, E.: TR-TuP2, 130 In, S.Y.: VT-TuP14, 130 Inada, A.: PS-MoM5, 88; PS-ThP1, 178 Incebacak, M.: EN-ThP13, 175 Ingram, G.: TF+SE+NS-WeM5, 139
Inose, N.: VT-TuP8, 130 Iriye, Y.: PS2-ThM9, 160 Irle, S.: GR-ThP3, 176 Irving, D.: EM+TF+AS-ThA1, 167; TF+ASTuA12, 120 Isa, L.: NS+EN+GR-TuA1, 117 Isaacson, M.: EN+NS-ThM12, 156 Ishibashi, K.: PS2-MoA11, 97 Ishibashi, T.: VT-TuA1, 121 Ishigami, M.: GR+AS+BI+PS+SS-WeM6, 134; GR+EM+ET+MS+NS-FrM10, 185; GR+EM+ET+NS+TF-MoA2, 94; NS+EN-TuM11, 107; TR+SE-WeM11, 140 Ishihara, T.: VT-MoM1, 90 Ishii, A.: NM-TuP2, 127; NM-TuP3, 127 Ishii, S.: TF+EM+SS-ThA3, 172 Ishikawa, K.: GR+AS+NS+SS-ThM9, 157; PS1-TuM5, 107; PS2-MoA7, 97; PS2ThM5, 160; PS2-TuA7, 118; PS2-WeA3, 148; PS-ThP14, 178; PS-ThP25, 179 Ishikawa, T.: NS+EN-TuM5, 107 Islam, M.: EN+TF-MoA11, 93 Islam, M.F.: TC+EM+AS-WeA7, 150 Ismail-Beigi, S.: OX+EM+MI+NS+TFMoM5, 87; OX+SS+TF+MI-MoA2, 96 Isobe, M.: PS2-TuA4, 118; PS2-TuA9, 118; PS-ThP6, 178 Israelachvili, J.N.: BI+SS+NS-WeM5, 132; TR-TuA4, 121 Itagaki, N.: EN+NS-MoM2, 84 Ito, M.: PS2-TuA7, 118 Ito, T.: PS1-ThM5, 160; PS2-TuA2, 118; PS2-TuA9, 118; PS-ThP6, 178 Itoi, T.: EM+TF+AS-ThA12, 167 Itou, A.: PS-MoM2, 88; PS-WeM10, 137 Itzhaik, Y.: ET+SS+GR+SP-FrM3, 184 Ivanov Boudinov, H.: EM-ThP7, 175 Ivanov, T.: EM-ThM3, 156 Ivanova, L.: EM+TF+AS-ThA10, 167 Iwao, T.: PS2-MoA11, 97 Iwasaki, T.: PS2-ThM9, 160 Iwasawa, H.: SS-TuP33, 129 Iwase, C.: PS2-ThM3, 160 Izawa, M.: PS-ThA1, 170
— J —
Jackson, S.A.: TR+SE-WeM12, 140 Jacq, S.: PS2-WeA10, 148 Jadeja, K.A.: VT+AS+SS-WeM11, 140 Jaehnig, M.: GR+EM+NS+SS+TF-ThA1, 169 Jain, K.: EW-WeL3, 142 Jain, R.: EM+TF-WeM6, 133 Jaiswal, P.: AS-TuP23, 124 Jakubiak, R.: SE+PS-TuM9, 108; TF+AS+SS-ThA10, 171 Jakubowski, A.: PS2-WeA3, 148 James, C.D.: ET+NS+EM-ThM10, 157 Jandhyala, S.: GR+EM+ET+MS+NS-FrM7, 185 Jang, J.S.: AS-TuP2, 124; EN+NS-MoM1, 84 Jang, L.: PS2-TuM9, 108 Jang, W.C.: EM+OX-WeA7, 144 Jankovic, V.: EN+NS-ThA6, 168 Jansen, A.: VT-TuM10, 110 Janssen, J.P.B.: PS-ThA9, 170 Javed, M.A.: MB+BI-ThA4, 169 Jelinek, P.: ET+SS+GR+SP-FrM4, 184; ET+SS+GR+SP-ThA9, 168; NS-MoM5, 86; SP+AS+BI+ET+MI+NS-TuA4, 119 Jelínek, P.: ET+SS+GR+SP-FrM5, 184 Jen, S.H.: TF-MoM10, 89 Jena, D.: GR+AS+NS+SS-ThM11, 157 Jennings, W.D.: AS-MoA6, 91 Jensen, B.D.: LB+EM+GR+MN+TR-WeA3, 146; MN+AS-MoM4, 85 Jensen, D.S.: TF2-TuA2, 120 Jeon, H.T.: EM+OX-WeA7, 144; NM+NS+MS+EM-MoA7, 95
Jeon, H.Y.: EM+OX-WeA7, 144; NM+NS+MS+EM-MoA7, 95 Jeon, K.Y.: SE-TuP1, 128 Jeon, M.H.: PS-ThP24, 179 Jeon, Y.: PS-ThP44, 179 Jernigan, G.G.: TF+AS-TuA3, 120 Jespersen, M.L.: EN+TF-TuA7, 114 Jesse, S.: SP+AS+BI+ET+MI+NS-TuA12, 119; SP+AS+BI+ET+MI+TF-WeA1, 149 Jeurgens, L.P.H.: IS+AS+OX+ET-WeM5, 135 Jewell, A.D.: SS-MoA7, 98; SS-TuP1, 129 Jezewski, C.: EM-TuA12, 114 Ji, E.: MB+BI-ThM9, 158 Ji, S.-H.: GR+EM+NS+PS+SS+TF-MoM8, 85 Ji, X.: PS2-TuM11, 108 Jia, Q.: IS+AS+OX+ET-WeM3, 135 Jian, W.: VT-MoA1, 99 Jiang, K.: NM+NS+MS+EM-MoA9, 95 Jiang, N.: NS-ThP3, 178 Jiang, S.: EM+TF+OX+GR-MoA1, 93 Jiang, Y.: EM-ThM11, 156 Jiang, Z.: ET+NS+EM-ThM9, 157 Jimenez, O.: TR-TuP6, 130 Jimenez-Aleman, O.: TR-TuP5, 130 Jobbins, M.M.: IS+AS+OX+ET-WeM1, 135 Johansson, L.: EM+MI-ThA6, 166 Johansson, M.P.: TF+NS+EM-ThM11, 163 Johnsen, R.: VT-TuP4, 130 Johnson, C.E.: IS+AS+BI+ET+GR+NSTuA7, 116 Johnson, C.W.: PS1-TuM4, 107 Johnson, D.J.: PS1-TuM4, 107 Johnson, E.: EN-ThP5, 175 Johnson, E.V.: EN+PS-WeM5, 133 Johnson, J.A.: IS+AS+BI+ET+GR+NSTuA7, 116 Johnson, J.W.: EM-ThP1, 175 Johnson, M.: EN+TF-MoA8, 93; EN+TFMoA9, 93; NS+AS+SS+SP-WeM2, 136 Johnson, M.D.: AS-ThA1, 166 Johnson, S.D.: GR+AS+EM+MI+MN-TuM1, 105 Johnston-Peck, A.: EN+SS-FrM4, 184 Joly, Y.: SS+OX-WeM5, 138 Jones, J.G.: SE+PS-TuM9, 108; TF+AS+SSThA10, 171 Jones, K.: EW-TuM8, 104; LB+EM+GR+MN+TR-WeA3, 146 Joo, M.H.: EN-ThP4, 175 Joo, Y.D.: VT-TuP7, 130 Joo, Y.H.: EM+TF+OX+GR-MoM8, 84; PS1-ThM6, 160; PS-ThP30, 179; TF+ASWeA12, 151 Jordan, K.D.: SS-ThA8, 171 Jordan, M.B.: MN+AS-MoM5, 85 Joseph, E.A.: PS1-ThM12, 160; PS-MoM2, 88; PS-WeM10, 137; TF2-TuA3, 120 Jouanneau, S.: EN+NS-ThM11, 156 Joubert, O.: PS1-WeA2, 148; PS-ThP7, 178 Jousseaume, V.: TF+MI-WeA7, 151 Jousten, K.: VT-MoA1, 99; VT-MoA7, 99 Joy, D.: HI+AS+NS-WeA1, 146 Joy, R.: TC+EM+AS+TF+EN-ThM2, 162 Ju, H.X.: SS-TuP35, 129 Judd, A.: BN+AS-WeA10, 143 Jung, D.W.: LB+EM+GR+MN+TR-WeA4, 146 Jung, I.W.: MN-TuM3, 106 Jung, J.: SS-ThM12, 161 Jung, R.: PS+BI-MoA3, 96; PS2-TuM1, 108; PS2-TuM6, 108; PS2-TuM9, 108; PSMoM5, 88 Jung, S.: GR+EM+ET+NS+TF-MoA10, 94 Jung, W.: EM+OX-WeA1, 144; GR-ThP6, 176 Jungnickel, H.: AS-TuP1, 124 Junige, M.: NM+AS+MS-MoM4, 86
197
Jupille, J.: SS+OX-WeM6, 138 Jur, J.S.: TF+NS+EM-ThM5, 163; TF2TuA1, 120; TF2-TuA10, 120; TF-MoM9, 89; TF-TuM9, 109 Jurczyk, B.: EN-ThP11, 175
— K —
Kabir, A.K.: MI+EN+BI-TuA8, 116 Kabius, B.C.: MI-ThP4, 177 Kadavanich, A.: PS2-TuM10, 108; PSThA11, 170 Kaganovich, I.D.: PS2-MoA10, 97; PS2MoA9, 97; PS2-WeA4, 148; PS-ThP17, 178; PS-ThP9, 178 Kahng, S.-J.: EM+SS+AS+NS-ThM12, 155 Kaiser, A.M.: MI+OX-WeA1, 147 Kajiwara, T.: GR+AS+NS+SS-ThM1, 157 Kakaroglou, A.: SE+PS-TuA9, 118 Kakekkhani, A.: OX+SS+TF+MI-MoA2, 96 Kakiuchi, H.: PS+TC-WeM3, 136; SE+PSTuA8, 118 Kalanyan, B.: EN+NS-ThA1, 168; EN+SSFrM1, 184; EN+SS-FrM3, 184; TF+ENMoA8, 98 Kalfon-Cohen, E.: OX+EM+MI+NS+TFMoM11, 87 Kalinin, S.V.: ET+SS+GR+SP-ThA7, 168; SP+AS+BI+ET+MI+NS-TuA12, 119 Kallaher, R.L.: MI-WeM11, 135 Kalyanaraman, R.: MN-TuP6, 126 Kam, L.C.: BI-MoM8, 83 Kamarthy, G.: PS-MoM1, 88; PS-MoM11, 88 Kamataki, K.: EN+NS-MoM2, 84 Kambhampati, R.: PS2-TuM6, 108 Kameshima, Y.: SS-TuP17, 129 Kamimura, T.: ET+NS+EM-ThM5, 157 Kamineni, V.: EM-TuA11, 114 Kamino, T.: NM-TuP3, 127 Kampen, T.: EW-TuL6, 111 Kan, H.-C.: TF+EM+SS-ThA10, 172 Kan, M.R.: MN+AS-MoM9, 85; MN-TuM9, 106 Kanakasabapathy, S.: PS2-TuM1, 108; PS2TuM6, 108; PS2-TuM9, 108; PS-MoM1, 88; PS-MoM5, 88 Kanazawa, K.: VT-TuA1, 121 Kanda, T.: GR+AS+NS+SS-ThM9, 157 Kandel, S.A.: AS-TuP26, 124; ET+SS+GR+SP-ThA3, 168; IS+AS+OX+ET-WeM1, 135 Kandratsenka, A.: SS-MoM4, 89 Kane, G.: VT-TuP9, 130 Kaneko, T.: PS+BI-MoA8, 96; PS1-ThM4, 160 Kanevce, A.: EN+AS-ThA1, 167 Kang, H.-G.: MN+AS-MoM8, 85 Kang, H.J.: AS-ThA4, 166; AS-TuP2, 124; AS-TuP22, 124 Kang, H.K.: PS-ThP23, 179 Kang, J.: NS-ThP4, 178 Kang, P.S.: NS-ThP6, 178 Kang, S.H.: PS-ThP28, 179 Kang, T.S.: EM-ThP1, 175; EM-ThP2, 175 Kang, X.: PS2-WeA9, 148 Kanjolia, R.K.: TF+NS+EM-ThM2, 163 Kanno, Y.: SS-TuP8, 129 Kant, C.: BI-TuP17, 125; NS-MoM11, 86 Kanyal, S.: TF2-TuA2, 120 Kao, P.K.: PS-ThP22, 179 Karadge, M.: TF-ThP5, 180 Karahashi, K.: PS1-ThM5, 160; PS2-TuA2, 118; PS2-TuA9, 118; PS-ThP6, 178 Karakas, E.: PS-ThP18, 178 Karakoti, A.S.: AS+BI-TuA12, 113; BITuP11, 125; EN-ThP10, 175; SS-TuP12, 129; SS-TuP26, 129 Kargar, M.: BI-TuP10, 125 Karim, A.M.: IS+AS+SS+EN-TuM10, 105 Karmel, H.J.: GR+AS+NS+SP+SS-TuA9, 115
Author Index
Karp, E.M.: SS-WeM6, 138; SS-WeM9, 138 Karpov, E.: EN-ThP9, 175; SS-MoM10, 89; SS-MoM11, 89; SS-TuP16, 129; SSTuP24, 129 Karpov, S.Y.: EM-TuM9, 103 Kasahara, A.: MN-TuP5, 126 Kashimura, K.: PS2-ThM3, 160 Kasouit, S.: EL+TF+AS+EM+SS+PS+EN+NMMoM3, 83 Kaspar, T.C.: IS+AS+OX+ET-WeM2, 135; SS+EN+OX-ThM11, 161; SS+OXWeM5, 138 Kasuya, A.: SS-MoA10, 98 Kato, H.: NM-TuP1, 127; NM-TuP2, 127; NM-TuP3, 127; NS+SP-MoA6, 95; SSMoA10, 98; SS-TuP31, 129; TF-ThP12, 180 Kato, T.: SS-TuP18, 129 Katoch, J.: GR+AS+BI+PS+SS-WeM6, 134; GR+EM+ET+NS+TF-MoA2, 94 Katsunuma, T.: PS-ThP12, 178 Katz, H.E.: TC+EM+AS-WeA3, 150 Kaufman Osborn, T.: LB+EM+GR+MN+TRWeA11, 146 Kaufman-Osborn, T.: EM+TF+OX+GRMoA3, 93 Kaul, A.: EN+TF-TuM11, 104; TF+ASWeA11, 151 Kawai, M.: BI+SS+NS-WeM11, 132; NS+SP-MoA6, 95; SS-ThM12, 161 Kawai, Y.: GR+EM+NS+PS+SS+TFMoM10, 85 Kawakami, R.: GR+AS+EM+MI+MNTuM3, 105 Kawamura, M.: TF-ThP2, 180 Kawasaki, H.: SS-ThA10, 171 Kawasaki, J.: EM+MI-ThA6, 166 Kay, B.D.: SS+EN+OX-ThM5, 161; SSThA3, 171 Kayani, A.: NS-WeA10, 147; OX-TuP6, 127 Kayser, S.: AS-MoA4, 91; AS-ThM11, 155; AS-WeM11, 132 Kazi, H.Ur.: PS2-WeA8, 148 Kean, A.H.: EW-WeL1, 142 Keavney, D.: MI+SP+AS-ThM12, 159 Keckes, J.: SE+NS-MoM5, 88 Kei, C.C.: IS-TuP1, 126 Keimer, B.: TF+AS-TuA10, 120 Kelber, J.A.: PS2-WeA8, 148 Kelkar, U.: TF+AS-TuA11, 120 Keller, A.: BI-TuP1, 125 Kelley, M.J.: VT+AS+SS-WeM4, 140 Kelliher, J.: TF2-TuA11, 120 Kellogg, G.L.: GR+AS+NS+SP+SS-TuA8, 115 Kelly, S.T.: IS+AS+BI+ET+GR+NS-TuA9, 116 Kelly, T.D.: AC+TF+SS+MI-MoA7, 91 Kelly, T.F.: AS-TuP18, 124 Kemper, T.: PS-ThP11, 178 Kennedy, J.R.: AC+EN-TuM1, 102 Kenney, J.: PS2-MoA3, 97 Kent, T.J.: AS-TuP21, 124; LB+EM+GR+MN+TR-WeA11, 146; SP+AS+BI+ET+MI+NM+NS+SS+TFWeM6, 137 Kerestes, C.: EN+NS-MoM10, 84 Kernert, N.: VT-TuM10, 110 Kersevan, R.: VT-TuA3, 121; VT-TuP6, 130 Kershner, R.: EW-TuL2, 111 Kessels, W.M.M.: EL+TF+AS+EM+SS+PS+EN+NMMoM6, 83; PS2-WeA9, 148; TC+EM+AS+TF+EN-ThM2, 162; TF+EN-MoA4, 98; TF-TuM10, 109; TFTuM11, 109; TF-TuM5, 109 Keun, S.K.: IS+AS+OX+ET-WeM3, 135
Author Index
Keville, B.J.: PS1-TuM10, 107; PS1-TuM9, 107 Khan, A.: PS2-TuM11, 108; PS-MoM10, 88 Khan, M.: EN+TF-MoA11, 93 Khan, S.S.: SS-WeM12, 138 Khare, R.: PS2-TuA3, 118 Khodadadi, B.: MI+OX-WeA2, 147 Khosla, N.: SS-ThM2, 161 Khrabrov, A.V.: PS2-MoA10, 97; PS2MoA9, 97 Khurshid, H.: MI-ThP2, 177; NS-MoM8, 86; NS-MoM9, 86 Khvalkovskiy, A.: MI+OX-WeA7, 147 Kiantaj, K.: EM+TF+OX+GR-MoA3, 93; LB+EM+GR+MN+TR-WeA11, 146 Kiefer, B.: IS+AS+SS+EN-TuM6, 105 Kikkawa, J.M.: GR+AS+EM+MI+MNTuM2, 105 Kikuchi, Y.: PS1-TuA9, 117 Kilicaslan, A.: PS+TC-WeM1, 136 Kilpi, L.: TF+NS+EM-ThM10, 163 Kim, B.: EM-TuA8, 114 Kim, C.I.: EM+TF+OX+GR-MoM8, 84; PS1ThM6, 160; PS-ThP30, 179; TF+ASWeA12, 151 Kim, C.K.: PS2-ThM6, 160; PS-ThP43, 179; VT-TuP7, 130 Kim, D.: PS-MoM9, 88 Kim, D.H.: EN+SS-FrM1, 184; NM+NS+MS+EM-MoA8, 95; NS+EN+GR-TuA10, 117; TF+EN-MoA8, 98 Kim, D.J.: IS+AS+OX+ET-WeM2, 135 Kim, G.T.: NS-ThP6, 178 Kim, G.Y.: PS+TC-WeM9, 136; PS-ThP27, 179 Kim, H.: EM+SS+AS+NS-ThM12, 155; SSWeM5, 138 Kim, H.J.: EM+OX-WeA11, 144; EM-TuM4, 103; NM+NS+MS+EM-MoA7, 95; PSThP24, 179; TF+AS-WeA12, 151 Kim, H.S.: EM+TF+OX+GR-MoM8, 84; PSThP30, 179 Kim, H.-Y.: EM-ThP1, 175; EM-TuM10, 103 Kim, J.: EM+TF+OX+GR-MoM6, 84; EMThP1, 175; EM-TuM10, 103; GR+EM+ET+MS+NS-FrM7, 185; TF2TuA9, 120 Kim, J.H.: EM-ThP12, 175; NS+EN+GRTuA11, 117 Kim, J.-H.: PS-ThP4, 178 Kim, J.-H.: PS-ThP42, 179 Kim, J.K.: EM-TuA8, 114; PS2-ThM6, 160; PS-ThP23, 179; PS-ThP43, 179 Kim, J.S.: NS-ThP6, 178 Kim, J.-T.: VT-TuP1, 130 Kim, K.H.: TC+EM+AS-WeA7, 150 Kim, K.J.: AS-TuP2, 124; EN+NS-MoM1, 84 Kim, K.N.: PS-ThP24, 179 Kim, M.: PS2-ThM12, 160 Kim, M.C.: PS-ThP44, 179 Kim, M.J.: EM+TF+OX+GR-MoA4, 93 Kim, M.K.: SS+NS-ThA3, 170 Kim, P.: GR+EM+ET+NS+TF-MoA10, 94 Kim, S.: EM+SS+AS+NS-ThM11, 155 Kim, S.H.: BI-TuP5, 125; EN+TF-TuM12, 104; PS-ThP33, 179; TR+BI-TuM11, 110 Kim, S.K.: PS-ThP23, 179 Kim, S.-K.: MI+SP+AS-ThM11, 159 Kim, S.M.: ET+NS+EM-ThM11, 157; NS+EN-TuM3, 107; NS-ThM11, 159 Kim, S.N.: GR+AS+BI+PS+SS-WeM6, 134 Kim, T.: ET+NS+EM-ThM3, 157 Kim, T.G.: TF-ThP18, 180 Kim, W.: MI-ThP1, 177; PS-WeM9, 137 Kim, W.J.: VT-TuP11, 130; VT-TuP12, 130; VT-TuP13, 130; VT-TuP14, 130 Kim, W.K.: EN+TF-TuM10, 104
198
Kim, Y.: PS+BI-MoA3, 96; SS-ThM12, 161; SS-TuP14, 129; SS-WeM5, 138; TR+BITuM1, 110 Kim, Y.-H.: EM+SS+AS+NS-ThM12, 155 Kim, Y.S.: AC+EN-TuM1, 102 Kimmel, G.A.: SS+EN+OX-ThM3, 161; SS+EN+OX-ThM5, 161; SS-TuM5, 109; SS-TuM6, 109 Kim-Ngan, N.-T.: AC+TF+SS+MI-MoA6, 91 Kimura, A.: MI-WeM1, 135 King, S.: EM-TuA9, 114; GR+EM+NS+SS+TF-ThA1, 169 King, S.T.: EM-ThP15, 175 King, W.: GR+AS+NS+SS-ThM3, 157 Kingshott, P.: BI+AS-TuA3, 113; BI-MoM6, 83 Kinoshita, K.: PS1-ThM9, 160 Kinoshita, T.: GR+EM+NS+PS+SS+TFMoM10, 85; PS2-ThM4, 160 Kinross, J.: IS+AS+BI+ET+GR+NS-TuA3, 116 Kintaka, H.: PS2-TuM1, 108; PS-MoM5, 88 Kioussis, D.R.: EM-TuA8, 114 Kirby, H.F.: TF-ThP4, 180 Kirchlechner, C.: SE+NS-MoM5, 88 Kis, A.: GR+EM+NS+SS+TF-ThA10, 169 Kisielowski, C.: GR+AS+NS+SS-ThM5, 157 Kjoller, K.: SP+AS+BI+ET+MI+TF-WeA9, 149 Kleese-Van Dam, K.: AS+NS+SS+TFWeA10, 143 Klem, E.J.D.: EN+NS-MoM11, 84 Klick, M.: PS1-WeA11, 148 Klimczak, A.: EW-WeL5, 142 Klingsporn, J.M.: NS-ThP3, 178 Kloss, F.: BI-MoM11, 83 Klymko, N.: EM-TuA8, 114 Knappe, D.: SE+PS-TuA4, 118 Knauf, J.: TF+EM+SS-ThA9, 172 Knaut, M.: NM+AS+MS-MoM4, 86 Knies, D.: AS-TuP27, 124 Knippenberg, M.T.: TR-TuA8, 121 Knoll, A.W.: NS+SP-MoA2, 95 Knoops, H.C.M.: EL+TF+AS+EM+SS+PS+EN+NMMoM6, 83; TC+EM+AS+TF+EN-ThM2, 162; TF-TuM5, 109 Knudsen, J.: GR+AS+NS+SP+SS-TuA7, 115; IS+AS+SS+EN-TuM12, 105 Knupfer, M.: GR-ThP3, 176 Ko, A.: PS-ThP16, 178; PS-ThP34, 179 Ko, C.G.: PS-ThP23, 179 Ko, M.K.: VT-TuP13, 130 Koay, C.: PS2-TuM9, 108 Kobata, M.: AS-ThA10, 166 Kobata, T.: VT-MoA4, 99 Kobayashi, K.: AS-ThA10, 166 Kobayashi, M.: PS2-TuM6, 108 Kobayashi, T.: BI+SS+NS-WeM11, 132 Kobe, H.: TF-ThP12, 180 Kocon, W.: PS-MoM9, 88 Koegler, P.: BI-MoM6, 83 Koel, B.: SS-WeA10, 150 Koelsch, P.: AS-WeM1, 132; AS-WeM3, 132 Koenraad, P.M.: SS+EM-WeA3, 149 Koga, K.: EN+NS-MoM2, 84 Koh, D.Y.: VT-TuP14, 130 Koirala, P.: EL+TF+AS+EM+SS+PS+EN+NMMoM4, 83 Kolind, K.: BI-MoM2, 83 Kollmer, F.: AS-MoA4, 91; AS-ThM11, 155; AS-WeM11, 132 Kolosko, A.G.: SE+NS-MoA7, 97 Komachi, J.: PS2-ThM4, 160 Komarneni, M.: NS+AS+SS+SP-WeM4, 136; SS-TuP38, 129 Kometani, R.: PS2-ThM5, 160 Komori, F.: GR+AS+NS+SS-ThM1, 157
Kondo, H.: GR+AS+NS+SS-ThM9, 157; PS1-TuM5, 107; PS2-MoA7, 97; PS2ThM5, 160; PS2-WeA3, 148; PS-ThP14, 178 Kondo, T.: GR+AS+EM+NS+SS-WeA12, 145 Kondo, Y.: PS2-MoA7, 97; PS-ThP14, 178 Kondoh, H.: IS+AS+SS+EN-TuM12, 105 Kondratyuk, P.: SS-WeA11, 150 Kong, C.S.: TR+BI-TuM10, 110 Kong, D.D.: SS-TuM9, 109; SS-TuP37, 129 Kong, L.: GR+EM+ET+NS+TF-MoA7, 94 Konicek, A.R.: AS+BI-TuA9, 113 Konneker, A.: MN+AS-MoM4, 85 Kono, Y.: BI-TuP15, 125; BN+AS-WeA3, 143 Kontic, R.: NS-ThP1, 178 Kornegay, S.M.: TF+EM+SE+NS-ThM4, 162 Korolkov, V.: SP+AS+BI+ET+MI+NSTuA9, 119 Körsgen, M.: AS-TuP1, 124 Koshihara, S.: NS+EN-TuM5, 107 Koshy, R.: PS-ThP1, 178; PS-WeM1, 137; PS-WeM4, 137 Koskey, S.: PS-WeM5, 137 Koskinen, J.: TF+NS+EM-ThM10, 163 Koster, N.B.: HI+AS+NS-WeA9, 146; PSThA9, 170; PS-ThP15, 178; VT-TuA7, 121 Kostov, K.: LB+EM+GR+MN+TR-WeA9, 146 Kotru, S.: EN+TF-WeA11, 144 Kotsugi, M.: GR+EM+NS+PS+SS+TFMoM10, 85 Kotula, P.G.: AS-TuP5, 124 Kourkoutis, L.F.: OX+EM+MI+NS+TFMoM8, 87 Kövér, L.: AS+TF+VT-FrM3, 183 Kowalik, J.: GR+EM+ET+MS+NS-FrM9, 185; GR-ThP10, 176 Kozhanov, A.: EM+MI-ThA10, 166 Kozhukhova, E.A.: EM-TuM9, 103 Kozhushner, M.: ET+SS+GR+SP-ThA4, 168 Krafcik, J.: NS+EN-TuM3, 107 Kraft, D.C.E.: BI+SS+NS-WeM1, 132; BIMoM11, 83; BI-MoM2, 83; BI-TuP1, 125 Kranz, L.: TF+AS-WeA3, 151 Krause, M.: SE+NS-MoM2, 88 Kravchenko, I.I.: EM-TuA2, 114 Kreil, J.: MI+OX-WeA2, 147 Krejci, O.: ET+SS+GR+SP-ThA9, 168 Krick, B.A.: TR+SE-WeM9, 140; TR-TuA3, 121; TR-TuA9, 121 Krim, J.: TR-TuA12, 121 Krishnan, R.: EN+TF-TuM10, 104 Krist, B.: EM-TuA12, 114 Kristensen, P.K.: EN-ThP5, 175 Kristiansen, K.: TR-TuA4, 121 Kroemker, B.: GR+AS+NS+SP+SS-TuA1, 115 Kröger, M.: NS+EN+GR-TuA1, 117 Kroll, U.: PS-ThA3, 170 Krommenhoek, P.J.: TF2-TuA1, 120 Kronast, F.: MI+OX-WeA1, 147 Kropman, D.J.: AS-TuP8, 124 Krounbi, M.: MI+OX-WeA7, 147 Krstev, I.: PS1-WeA10, 148 Krueger, B.: TC+EM+AS+TF+EN-ThM11, 162 Krueger, J.: EM-ThP15, 175 Krüger, P.: MI-WeM1, 135 Krueger, P.: SS+OX-WeM6, 138 Krylov, S.: MN+AS-MoM10, 85; MN-MoA8, 94 Ku, J.H.: EM-TuM4, 103 Kuang, Z.: GR+AS+BI+PS+SS-WeM6, 134 Kub, F.J.: EM+TF+AS-ThA6, 167; GR+AS+EM+MI+MN-TuM1, 105; GRThP9, 176
Kubetzka, A.: NS-ThM1, 159 Kuboi, N.: PS2-ThM4, 160 Kubota, T.: MN-TuP4, 126; PS2-ThM11, 160; PS2-ThM9, 160; PS-MoM6, 88 Kuchibhatla, S.V.N.T.: AS+BI-TuA12, 113 Kuciauskas, D.: EN+AS-ThA1, 167 Kucukgok, B.: EM+TF+AS-ThA9, 167 Kuemin, C.: NS+SP-MoA2, 95 Kuhn, M.: GR+EM+NS+SS+TF-ThA1, 169 Kuhness, D.: SS+OX-WeM12, 138 Kujofsa, T.M.: EM+MI-ThA1, 166 Kuk, Y.: MI-WeM11, 135; MI-WeM2, 135 Kulkarni, D.: SS-TuP36, 129 Kulkarni, P.: BI-TuP7, 125 Kulsreshath, M.: PS+EM-MoM3, 87 Kumar, A.: BI-TuP11, 125; BI-TuP3, 125; EL+TF+BI+AS+EM+SS-MoA8, 92; MNTuP6, 126; PS+EM-MoM8, 87 Kumar, K.: PS2-TuM1, 108; PS-MoM5, 88; PS-ThP1, 178; PS-ThP16, 178; PSWeM4, 137 Kumar, S.: EL+TF+BI+AS+EM+SS-MoA8, 92 Kummel, A.C.: AS-TuP21, 124; BI+SS+NSWeM6, 132; BI-TuP15, 125; BN+ASWeA3, 143; EM+TF+OX+GR-MoA3, 93; LB+EM+GR+MN+TR-WeA11, 146; SP+AS+BI+ET+MI+NM+NS+SS+TFWeM6, 137; SS-ThM11, 161 Kung, M.: TF+EN-MoA1, 98 Kung, P.: ET+NS+EM-ThM11, 157; NS+ENTuM3, 107; NS-ThM11, 159 Kungas, R.: SP+AS+BI+ET+MI+TF-WeA3, 149 Kunze, C.: SS-ThA9, 171 Kuo, H.-S.: HI+AS+NS-WeA8, 146 Kusakabe, K.: EM+TF+AS-ThA12, 167 Kushner, M.J.: PS2-TuA11, 118 Kusova, K.: NS-MoM5, 86 Kutlu, B.: EN-ThP13, 175 Kuwahara, K.: TF-ThP6, 180 Kwan, J.K.: MN-MoA7, 94 Kwon, G.: PS+BI-MoA3, 96 Kwon, H.C.: VT-TuP7, 130 Kwon, J.: TF+NS+EM-ThM2, 163 Kwon, T.: PS2-TuM6, 108 Kwon, Y.H.: OX+EM+MI+NS+TF-MoM2, 87 Kwon, Y.J.: TF+AS-WeA2, 151 Kyoung, Y.K.: AS+BI-TuM9, 102; AS-ThA4, 166 Kyriakou, G.: SS-MoA7, 98; SS-TuP1, 129; SS-WeM1, 138 Kysar, J.W.: MN-MoA3, 94
— L —
Labbé, P.: BI+SS+NS-WeM10, 132 LaBella, V.P.: EM+NS-FrM5, 183; ET+SS+GR+SP-FrM6, 184; GR+AS+NS+SP+SS-TuA11, 115 Labelle, C.: PS-ThP1, 178; PS-WeM1, 137 Labonte, A.P.: PS-WeM1, 137; PS-WeM11, 137 Laboutin, O.: EM-ThP1, 175 Lacovig, P.: LB+EM+GR+MN+TR-WeA9, 146 Ladroue, J.: MN+AS-MoM6, 85; PS1-ThM3, 160 Laera, S.: BI+SS+AS-TuM12, 103 LaForge, J.M.: TF+SE+NS-WeM5, 139; TF+SE+NS-WeM9, 139 LaGoo, L.: AS+BI-TuM4, 102 Lahiri, J.: GR+EM+NS+SS+TF-ThA2, 169 Lalany, A.: TF+SE+NS-WeM11, 139 Lam, J.C.K.: AS+BI-TuA2, 113; AS+BITuA4, 113 Lam, K.: EM-ThM5, 156 Lampen, P.: NS-MoM8, 86 Lanceros-Méndez, S.: BI+AS-TuA7, 113 Landrock, S.: EM-ThM11, 156
199
Landt, L.: AS+TF+VT-FrM2, 183 Lane, B.G.: PS1-TuM11, 107; PS1-WeA12, 148 Langenkämper, Ch.: MI-WeM1, 135 Langer, R.: BI-MoA10, 92; BI-MoA4, 92; BIMoA8, 92; MB+BI-ThM12, 158 Langfitt, Q.: OX-TuP6, 127 Larciprete, R.: LB+EM+GR+MN+TR-WeA9, 146 Laroussi, M.: SE+PS-TuA1, 118 Larsen, G.K.: TF+SE+NS-WeM3, 139 Larson, D.J.: AS-TuP18, 124 Lashley, J.C.: EM+NS-FrM11, 183 Laskin, A.: IS+AS+BI+ET+GR+NS-TuA9, 116 Laskin, J.: AS+NS+SS+TF-WeA10, 143 Laskoski, M.: GR-ThP9, 176 Lass, S.: EW-WeM8, 134 Latrous, H.: AC+EN-TuM11, 102 Latu-Romain, L.: TF+MI-WeA7, 151 Lau, K.S.: EN+TF-WeA3, 144 Lauer, I.: EM+NS-FrM10, 183 Lauhon, L.J.: ET+NS+EM-ThM1, 157 Lauter, V.: MI+OX-WeA12, 147 Laver, M.: OX+EM+MI+NS+TF-MoM10, 87 Lavoie, C.: EM+NS-FrM7, 183; EM+NSFrM9, 183 Law, M.: EN+TF-MoA6, 93; TF+AS-WeA2, 151 Lawrence, D.: AS-TuP18, 124 Lawton, T.: SS-WeM1, 138 Lazovsky, D.: NM+MS-TuM9, 106 Lazzaroni, R.: PS+TC-WeM12, 136; SE+NSMoA4, 97 Le Brizoual, L.: PS2-WeA10, 148 Le Lay, G.: GR+EM+NS+SS+TF-ThA6, 169 Le, D.: GR+EM+ET+MS+NS-FrM3, 185; GR+EM+ET+NS+TF-MoA2, 94; GRThP8, 176; NS+EN+GR-TuA7, 117; SSWeA1, 150 Le, M.: PS-ThP10, 178 Le, N.B.: GR-ThP4, 176 Lea, A.S.: NS-ThM2, 159 LeBeau, J.: EM+TF+AS-ThA1, 167 LeClair, P.R.: MI+OX-WeA12, 147 Lecordier, L.: TF+EM+SS-ThA7, 172; TFWeM1, 139 Lee, A.J.: NS+SP-MoA1, 95 Lee, B.H.: TF-MoM10, 89 Lee, B.-J.: AS-ThM10, 155 Lee, B.O.: PS-ThP23, 179 Lee, C.: PS2-TuM10, 108 Lee, C.-M.: GR+EM+ET+NS+TF-MoA7, 94 Lee, C.T.: EM-ThP3, 175; TF-ThP7, 180 Lee, D.H.: TR+BI-TuM1, 110 Lee, D.Y.: IS+AS+OX+ET-WeM1, 135 Lee, G.: PS+BI-MoA3, 96 Lee, H.I.: AS-ThA4, 166 Lee, H.S.: PS-ThP29, 179 Lee, I.: TC+EM+AS-WeA7, 150 Lee, J.: GR-ThP6, 176; PS-WeM6, 137; SP+AS+BI+ET+MI+NS-TuA3, 119; SSThA8, 171 Lee, J.C.: AS+BI-TuM9, 102; AS-ThA4, 166; AS-TuP22, 124 Lee, J.H.: EN+TF-TuM12, 104; MI-ThP5, 177; OX+EM+MI+NS+TF-MoM2, 87 Lee, J.M.: EN-ThP4, 175 Lee, J.R.I.: AS+TF+VT-FrM2, 183; IS+AS+OX+ET-WeM6, 135 Lee, J.S.: EM+OX-WeA7, 144; EM+TF+OX+GR-MoA3, 93; MB+BIThA1, 169; NM+NS+MS+EM-MoA7, 95 Lee, J.-W.: PS-ThP41, 179 Lee, J.Y.: OX+EM+MI+NS+TF-MoM2, 87; PS2-ThM12, 160; SE-TuP1, 128 Lee, K.I.: AS-TuP22, 124 Lee, K.M.: NS+EN+GR-TuA10, 117; TF+EN-MoA8, 98
Author Index
Lee, K.-M.: GR+EM+ET+MS+NS-FrM3, 185 Lee, K.W.: PS-ThP23, 179 Lee, M.: TF2-TuA9, 120 Lee, N.I.: EM-TuM4, 103 Lee, S.B.: EN+AS-ThA3, 167 Lee, S.H.: EM-TuM4, 103 Lee, S.Y.: AS-TuP22, 124 Lee, T.G.: BI-TuP5, 125 Lee, T.H.: EM-TuA8, 114 Lee, T.Y.: VT+AS+SS-WeM1, 140 Lee, W.J.: BI-TuP5, 125 Lee, W.K.: GR+AS+NS+SS-ThM3, 157; GRThP9, 176 Lee, W.Y.: PS-ThP38, 179 Lee, Y.: TF2-TuA8, 120 Lee, Y.H.: EN+TF-TuM12, 104 Lee, Y.K.: SS-MoM1, 89 Lee, Y.S.: PS-ThP23, 179 Leever, B.J.: EN+TF-TuA7, 114 Lefaucheux, P.: MN+AS-MoM6, 85; PS+EM-MoM3, 87; PS1-ThM2, 160; PS1-ThM3, 160 Legget, G.J.: NS+SP-MoA1, 95 Leggett, G.J.: TF+EM+SS-ThA1, 172 Lei, Y.: IS+AS+SS+EN-TuM9, 105 Leick, N.: EL+TF+AS+EM+SS+PS+EN+NMMoM6, 83; TF-TuM10, 109 Leick-Marius, N.: TF+EN-MoA4, 98 Leidy, C.: BI-TuP6, 125 Leighton, C.: EN+TF-MoA8, 93; EN+TFMoA9, 93; OX+EM+MI+NS+TFMoM10, 87 Leinweber, C.: BI-TuP14, 125 Leitner, D.: VT-TuA3, 121; VT-TuP6, 130 Leitner, M.: VT-TuA3, 121; VT-TuP6, 130 Lemaitre, M.: LB+EM+GR+MN+TR-WeA7, 146 Lemay, J.-C.: SS-ThM5, 161 Lenahan, P.: EM-TuM11, 103 Lenox, C.: PS-MoM8, 88 Lenz, A.: EM+TF+AS-ThA10, 167 Leonhardt, D.: EM-ThM12, 156 Leou, K.-C.: PS-ThP45, 179 Leroux, C.: NM+NS+MS+EM-MoA6, 95 Leroy, P.: PS-ThP32, 179 Letofsky-Papst, I.: SE+NS-MoM9, 88 Levasseur, O.: PS+BI-MoA10, 96; PS+BIMoA11, 96; PS+TC-WeM1, 136; PS+TCWeM6, 136 Levy, N.: MI-WeM11, 135; MI-WeM2, 135 Lewin, E.: SE+PS-TuM5, 108 Lewis, E.A.: SS-WeA2, 150 Lewis, E.K.: BN+AS-WeA12, 143 Lewis, J.: EN+NS-MoM11, 84 Lewis, N.S.: EM+TF-WeM12, 133 Lewis, T.: SS-ThA2, 171 Li, A.-P.: ET+NS+EM-ThM3, 157; ET+NS+EM-ThM4, 157; ET+SS+GR+SP-ThA6, 168; GR+EM+NS+PS+SS+TF-MoM2, 85 Li, C.: TC+EM+AS-WeA4, 150 Li, D.S.: AS+NS+SS+TF-WeA10, 143 Li, J.: EN+AS-ThA7, 167; IS-TuP2, 126 Li, J.B.: TC+EM+AS-WeA4, 150 Li, K.: NS+SP-MoA8, 95 Li, L.: NS-ThP4, 178 Li, L.J.: LB+EM+GR+MN+TR-WeA8, 146 Li, Q.: EM-ThM12, 156; SP+AS+BI+ET+MI+NS-TuA12, 119; SSWeM4, 138 Li, S.: TF+AS-TuA1, 120 Li, W.: MI-ThP2, 177; TF-ThP17, 180 Li, W.Y.: PS-ThA10, 170 Li, X.D.: ET+NS+EM-ThM4, 157 Li, Y.: SS-TuP9, 129; VT+AS+SS-WeM2, 140; VT-TuA11, 121
Author Index
Li, Z.: ET+SS+GR+SP-ThA11, 168; SS+EN+OX-ThM5, 161; SS+NS-TuA4, 119; VT+AS+SS-WeM10, 140; VT+AS+SS-WeM6, 140 Li, Z.S.: EM+NS-FrM4, 183; EM+SS+AS+NS-ThM3, 155 Lian, T.: EN+NS-MoM8, 84 Liang, C.-K.: AS-ThM5, 155 Liang, T.: EN+SS-FrM6, 184; OX+SS+TF+MI-MoA1, 96; OX-TuP1, 127; OX-TuP3, 127 Liang, Y.: PS1-WeA3, 148 Liang, Z.: SS-WeM5, 138 Liao, B.-H.: EN-ThP2, 175; TF-ThP13, 180 Liao, Y.C.: PS+EM-MoM4, 87 Libera, J.A.: TC+EM+AS+TF+EN-ThM6, 162 Liberman, A.: BN+AS-WeA3, 143 LiCausi, N.: EM-TuA11, 114 Lichtenstein, L.: NS-ThM3, 159 Licitra, C.: NS-ThM10, 159 Liddiard, S.: LB+EM+GR+MN+TR-WeA3, 146 Liddle, J.A.: NM+AS+MS-MoM1, 86 Lie, F.: PS2-TuM9, 108 Liedberg, B.: MB+BI-ThA3, 169 Lien, S.-E.: PS-ThP45, 179 Ligot, S.: PS1-TuA8, 117 Lii, T.: PS-MoM8, 88 Lilly, M.: TF2-TuA11, 120 Lim, D.: TF+EM+SS-ThA11, 172 Lim, H.J.: EM-TuM4, 103 Lim, J.T.: ET-ThP1, 176 Lim, J.Y.: VT-TuP11, 130; VT-TuP12, 130; VT-TuP13, 130; VT-TuP14, 130 Lim, W.: EM-TuM9, 103 Lim, W.S.: PS-ThP23, 179 Lima, L.P.B.: TF-ThP11, 180 Limanto, F.: TR+BI-TuM1, 110 Lin, C.-F.: TF+EM+SS-ThA10, 172 Lin, C.-P.: VT-TuP5, 130 Lin, C.-Y.: HI+AS+NS-WeA8, 146 Lin, D.: LB+EM+GR+MN+TR-WeA12, 146 Lin, F.-Y.: TR+BI-TuM10, 110; TR-TuP1, 130 Lin, G.: AS+NS+SS+TF-WeA10, 143 Lin, J.H.: AS-TuP7, 124; EM-TuM5, 103 Lin, J.M.: AS-TuP20, 124 Lin, K.C.: LB+EM+GR+MN+TR-WeA8, 146 Lin, M.Y.: BI-TuP4, 125; GR-ThP2, 176; NSThP7, 178 Lin, P.A.: PS+EM-MoM8, 87 Lin, Q.: EM-TuA10, 114; PS2-TuM6, 108 Lin, S.: AS-TuP17, 124; GR+EM+ET+MS+NS-FrM3, 185 Lin, W.Z.: SP+AS+BI+ET+MI+NS-TuA12, 119 Lin, X.: SS+EN+OX-ThM5, 161 lin, Y.: TF-ThP17, 180 Lin, Y.: EM-TuA8, 114 Lin, Y.C.: MN+AS-MoM11, 85 Lin, Y.H.: EM+SS+AS+NS-ThM13, 155 Lin, Y.-W.: TF-ThP13, 180; TF-ThP3, 180; VT-TuP5, 130 Lince, J.R.: TR+SE-WeM12, 140 Linck, M.: GR+AS+NS+SS-ThM5, 157 Linder, B.P.: EM+TF+OX+GR-MoA7, 93 Lindh, L.: BI+SS+AS-TuM3, 103 Lindsay, A.: SE+PS-TuA3, 118; SE+PSTuA4, 118 Linford, M.R.: TF+EM+SS-ThA8, 172; TF2TuA2, 120; TF-MoM4, 89; TF-WeM6, 139 Ling, Z.: PS-ThA10, 170 Lingy, L.: VT-TuA3, 121; VT-TuP6, 130 Linn-Molin, E.: TR+SE-WeM10, 140 Liou, J.C.: MN+AS-MoM11, 85 Lippitz, A.: AS+BI-TuM5, 102 Lister, R.: NS-ThP2, 178
200
Little, B.J.: MB+BI-ThA1, 169 Liu, B.: IS+AS+SS+EN-TuM9, 105 Liu, C.: PS1-ThM12, 160; SE-TuP4, 128 Liu, J.: AS+NS+SS+TF-WeA10, 143; EN+SS-FrM3, 184; NM+AS+MS-MoM5, 86 Liu, L.: EM-ThP1, 175; EM-ThP2, 175; PSMoM8, 88 Liu, X.: EM-TuA7, 114; VT+AS+SS-WeM2, 140; VT-TuA11, 121 Liu, Y.: EM-ThM1, 156; EN+SS-FrM5, 184; SS+NS-TuA3, 119; TC+EM+AS-WeA3, 150 Liu, Y.H.: VT-TuA12, 121 Liu, Z.: EN+SS-FrM5, 184; GR+EM+NS+SS+TF-ThA3, 169; IS+AS+SS+EN-TuM4, 105; IS+AS+SS+EN-TuM5, 105 Livadaru, L.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM2, 137 Lizzit, S.: LB+EM+GR+MN+TR-WeA9, 146 Ljazouli, R.: PS1-ThM2, 160 Lo, C.-F.: EM-ThP1, 175; EM-ThP2, 175 Lo, E.: IS+AS+BI+ET+GR+NS-TuA1, 116 Lo, M.: SP+AS+BI+ET+MI+TF-WeA9, 149 Lock, E.H.: GR+AS+BI+PS+SS-WeM9, 134; GR-ThP9, 176; PS-ThP40, 179 Locquet, J.P.: IS+AS+OX+ET-WeM9, 135 Lodge, M.: GR+EM+ET+MS+NS-FrM10, 185; TR+SE-WeM11, 140 Lofaro, J.C.: NS+AS+SS+SP-WeM12, 136 Logvenov, G.: TF+AS-TuA10, 120 Lohstreter, L.: AS+BI-TuM4, 102; ASMoA8, 91 Loncar, M.: MN-TuM1, 106 Longo, C.: TF+SE+NS-WeM3, 139 Lopez, G.P.: MB+BI-ThA6, 169 Lopez-Lopez, S.: PS2-MoA6, 97 Lopinski, G.P.: EM+NS-FrM1, 183 Loquet, Y.: PS-ThP1, 178 Lorenz, K.: AC+TF+SS+MI-MoA9, 91 Losby, J.E.: MN-TuM9, 106 Loscutoff, P.: EM-TuA1, 114 Losego, M.D.: EN+NS-ThA1, 168; EN+SSFrM1, 184; SE+NS-MoA10, 97 Losovyj, Ya.B.: AC+TF+SS+MI-MoA1, 91; AC+TF+SS+MI-MoA7, 91 Lottis, D.: MI+OX-WeA7, 147 Lotze, C.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM4, 137 Lou, J.: GR+EM+NS+SS+TF-ThA3, 169 Lou, Y.: SS+NS-TuA4, 119 Louette, P.: AS-MoA2, 91 Louie, S.G.: GR+AS+NS+SS-ThM5, 157 Love, C.: BI+AS-TuA4, 113 Lovinger, D.: NS-ThM6, 159 Lozova, N.: SS-TuP33, 129 Lu, C.-J.: MN-MoA9, 94 Lu, G.: GR+AS+NS+SP+SS-TuA2, 115; SSTuP3, 129 Lu, H.L.: MN-MoA9, 94 Lu, J.: IS+AS+SS+EN-TuM9, 105 Lu, J.W.: EM+MI-ThA11, 166; MI+EN+BITuA7, 116 Lu, L.: EM-TuM9, 103 Lu, M.: TF+AS-WeA1, 151 Lu, N.: EM+TF+OX+GR-MoA4, 93 Lu, T.-M.: TF+SE+NS-WeM4, 139 Lu, W.C.: SS-WeM4, 138 Lu, W.H.: GR-ThP8, 176; SS-WeA1, 150 Lu, Y.: AS-TuP26, 124; ET+SS+GR+SPThA3, 168; PS2-ThM5, 160 Lu, Y.-H.: HI+AS+NS-WeA8, 146 Lu, Y.P.: BI-TuP4, 125; GR-ThP2, 176; NSThP7, 178 Lu, Y.W.: PS+EM-MoM4, 87 Lu, Z.: SS-TuP26, 129
Lu, Z.-H.: OX+SS+TF+MI-MoA7, 96 Lucatorto, T.B.: SS-TuM3, 109 Lucchini, J.-F.: AC+EN-TuM9, 102 Lucero, A.T.: EM+TF+OX+GR-MoM6, 84; TF2-TuA9, 120 Luch, A.: AS-TuP1, 124 Lui, Y.: IS+AS+BI+ET+GR+NS-TuA7, 116 Lukasiak, L.: PS2-WeA3, 148 Lukaszew, R.A.: TF+AS+SS-ThA8, 171; VT+AS+SS-WeM10, 140; VT+AS+SSWeM6, 140; VT+AS+SS-WeM9, 140 Lund, J.: LB+EM+GR+MN+TR-WeA3, 146 Lundgren, C.A.: EN+NS-ThM10, 156 Luo, B.: TF-ThP10, 180 Luo, H.: EL+TF+BI+AS+EM+SS-MoA9, 92 Luo, M.: SS-WeM2, 138 Luo, X.: VT-TuM4, 110 Luscombe, C.K.: ET+SS+GR+SP-ThA11, 168; SS-TuP14, 129 Luther, J.M.: EN+NS-MoM3, 84 Lutolf, M.: BI-MoA1, 92 Luttrell, T.: SS-TuP15, 129 Lynch, S.: SE-TuP4, 128 Lyubinetsky, I.: IS+AS+OX+ET-WeM2, 135; SS+EN+OX-ThM5, 161; SS+EN+OXThM9, 161; SS-TuM5, 109 Lyytinen, J.: TF+NS+EM-ThM10, 163
— M —
Ma, J.: EN+AS-ThA1, 167 Ma, K.S.: MN-TuP2, 126 Ma, M.: EN+PS-WeM3, 133 Ma, Q.: GR-ThP8, 176; SP+AS+BI+ET+MI+NM+NS+SS+TFWeM5, 137; SS-WeA1, 150 Maas, D.J.: HI+AS+NS-WeA9, 146 Maboudian, R.: EN+TF-WeA4, 144; TR+BITuM1, 110 Macak, E.: AS+NS+SS+TF-WeA8, 143 Macak, K.: AS+NS+SS+TF-WeA8, 143 Maccallini, E.: EW-TuA5, 115 Macco, B.: NS-MoM6, 86 MacDonald, A.H.: EM+OX-WeA1, 144 MacGearailt, N.: PS1-WeA1, 148; PS1WeA4, 148 Mack, P.: AS+BI-TuM11, 102; AS-MoA2, 91; AS-MoM10, 82; BI+AS-TuA7, 113; EW-TuL3, 111 Macke, S.: TF+AS-TuA10, 120 Mackenzie, K.D.: PS1-TuM4, 107 Mackus, A.J.M.: TF+EN-MoA4, 98; TFTuM10, 109 Madaan, N.: TF+EM+SS-ThA8, 172 Madan, A.: EM-TuA8, 114 Madisetti, S.: EM+TF+OX+GR-MoM3, 84 Maeda, K.: PS-ThA1, 170 Maerkl, S.: BI+AS-TuA11, 113 Magana, S.: TF+EM+SS-ThA11, 172 Magaud, L.: PS2-WeA12, 148 Magel, G.A.: NS+SP-MoA4, 95 Magnone, K.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM5, 137 Magnuson, C.W.: GR+AS+NS+SP+SSTuA11, 115 Mahadevan, S.: PS2-MoA11, 97 Mahadik, N.: TF+NS+EM-ThM1, 163 Mahlstedt, M.: BI-MoA8, 92 Mahoney, C.M.: AS+BI-TuM6, 102 Mai, Z.H.: AS+BI-TuA2, 113; AS+BI-TuA4, 113 Maidecchi, G.: EL+TF+BI+AS+EM+SSMoA8, 92 Majer, M.: EM-TuA11, 114 Majeski, M.: EN-ThP3, 175 Majkic, G.: EN+TF-TuA8, 114 Majzik, Z.: ET+SS+GR+SP-FrM5, 184; ET+SS+GR+SP-ThA9, 168; SP+AS+BI+ET+MI+NS-TuA4, 119 Mak, T.: EM-ThM5, 156
Makabe, T.: PS+EM-MoM10, 87 Maksymovych, P.: ET+SS+GR+SP-FrM9, 184; NS+AS+SS+SP-WeM11, 136; SSWeM4, 138 Malgorzata, J.: TF-ThP1, 180 Malinowski, A.: PS1-TuM5, 107; PS2-WeA3, 148 Malko, A.V.: EL+TF+BI+AS+EM+SSMoA2, 92; EN+TF-WeA7, 144 Mallik, S.: BI-TuP7, 125 Malocsay, C.: EW-WeL2, 142 Malyshev, O.B.: VT-TuM1, 110 Mamun, M.A.: VT-MoM5, 90; VT-TuP16, 130 Manandar, B.: AS-WeM6, 132 Manandhar, S.: OX-TuP6, 127 Mancheno-Posso, P.L.: EM-ThP16, 175 Mancini, D.C.: NS+SP-MoA11, 95 Mangham, A.N.: SS+OX-WeM5, 138 Manini, P.: EW-TuA5, 115; VT-TuM12, 110 Mankelevich, Y.: PS1-ThM2, 160 Mankey, G.J.: MI+OX-WeA12, 147 Mann, H.S.: TF+EN-MoA7, 98 Mann, J.: GR-ThP8, 176; SS-WeA1, 150 Mann, W.: NS-ThM6, 159 Mannequin, C.: OX-TuP2, 127; TF+MIWeA7, 151 Manno, M.: EN+TF-MoA8, 93; EN+TFMoA9, 93 Manoharan, E.A.: MI+OX-WeA12, 147 Mansour, A.N.: GR+AS+NS+SS-ThM10, 157 Mao, B.: IS+AS+SS+EN-TuM4, 105 Marchack, N.: PS1-ThM11, 160 Marchman, K.R.: TR+BI-TuM10, 110; TRTuA3, 121 Marcott, C.: SP+AS+BI+ET+MI+TF-WeA9, 149 Marder, S.R.: SS-TuP14, 129 Margarella, A.: SS+NS-TuA3, 119; SS-ThA1, 171; SS-ThA2, 171 Mari, D.: VT-MoA1, 99 Maria, J.-P.: TF+AS-TuA12, 120 Mariani, R.D.: AC+EN-TuM1, 102 Marić, D.: MB+BI-ThA4, 169 Marichy, C.: TF+NS+EM-ThM9, 163 Marinella, M.: ET+NS+EM-ThM10, 157 Marot, L.: PS2-WeA1, 148 Marquardt, A.E.: TF-MoM3, 89 Marquis, E.A.: AS+NS+SS+TF-WeA1, 143 Marshall, C.: TF+EN-MoA1, 98 Marsillac, S.: EL+TF+AS+EM+SS+PS+EN+NMMoM1, 83; EL+TF+AS+EM+SS+PS+EN+NMMoM4, 83 Marti, F.: VT-TuA3, 121; VT-TuP6, 130 Martin, F.: EM+TF+OX+GR-MoA9, 93 Martin, R.L.: AC+MI+SS+TF-MoM3, 82 Martin, R.M.: PS2-TuM6, 108; PS-MoM6, 88 Martin, R.W.: AC+TF+SS+MI-MoA9, 91 Martínez de Olcoz Sainz, L.: TR+SE-WeM4, 140 Martinez, E.: EM+TF+OX+GR-MoA9, 93; NS-ThM10, 159 Martinez, H.P.: BN+AS-WeA3, 143 Martinez, J.: OX-TuP4, 127 Martinez, L.: PS1-TuM4, 107 Martini, A.: SE+NS-MoA1, 97 Martirez, J.: SS+OX-WeM10, 138 Masahara, M.: EM-ThM1, 156 Mascarenhas, A.: MI+SP+AS-ThM12, 159 Masheder, B.: SS-ThM1, 161 Masini, F.: SS-ThM5, 161 Masters, A.E.: TF+EN-MoA7, 98 Mastrangelo, A.M.: PS+TC-WeM5, 136 Mastro, M.A.: EM+TF+AS-ThA6, 167; SS+EM-WeA1, 149; TF+NS+EM-ThM1, 163
201
Mathias, A.D.: MN-MoA6, 94; MN-TuM6, 106 Mathieu, P.: NS+SP-MoA7, 95 Matos, J.: SS-TuP27, 129 Matsubayashi, A.: GR+AS+EM+NS+SSWeA7, 145 Matsuda, A.: PS-ThP20, 179 Matsugai, H.: PS-ThP14, 178 Matsui, K.: TF-ThP12, 180 Matsukawa, T.: EM-ThM1, 156 Matsumoto, H.: PS-MoM2, 88 Matsumoto, K.: ET+NS+EM-ThM5, 157 Matsumoto, S.: SS-ThA10, 171 Matsunaga, S.: BI+SS+NS-WeM11, 132 Matsuo, J.: AS-ThM9, 155 Matsushima, K.: EN-ThP6, 175 Matsushita, S.Y.: SS-MoA10, 98 Matsuura, G.: PS-MoM2, 88 Mattes, W.: TR-TuP7, 130 Matthews, O.: TR+SE-WeM10, 140 Mattrey, R.F.: BI-TuP15, 125; BN+ASWeA3, 143 Mattson, E.: AS-WeM6, 132; GR+AS+NS+SP+SS-TuA2, 115; SSTuP3, 129 Mau, X.: EM+OX-WeA1, 144 Maucher, H.P.: PS1-WeA11, 148 Mavrakakis, K.: EM-TuA10, 114 Mavrikakis, M.: SS-MoA7, 98; SS-TuP1, 129 Maxisch, M.: OX+SS+TF+MI-MoA11, 96 Mayer, B.: SE+NS-MoM5, 88 Mayrhofer, P.H.: SE+NS-MoM5, 88; SE+NSMoM6, 88 Maziarz, E.P.: AS-TuP19, 124 Mazzio, K.: ET+SS+GR+SP-ThA11, 168 McArthur, S.L.: MB+BI-ThA4, 169; MB+BIThM3, 158 McBreen, P.H.: SS-ThM5, 161 McCleskey, T.M.: IS+AS+OX+ET-WeM3, 135 McClimon, J.B.: EM+NS-FrM6, 183; ENThP1, 175 McClory, J.W.: AC+TF+SS+MI-MoA1, 91; AC+TF+SS+MI-MoA7, 91 McCormack, R.N.: MN-TuP6, 126 McDonald, K.: SS-MoA3, 98 McEuen, P.L.: MN-TuM10, 106; MNTuM11, 106 McGuckin, T.: NS+EN-TuM6, 107 McGuire, C.: GR+EM+ET+MS+NS-FrM3, 185 McHale, S.R.: AC+TF+SS+MI-MoA1, 91 McLean, K.M.: BI-MoM1, 83 McLean, R.S.: TF-MoM10, 89 McNamara, J.D.: EM+TF+AS-ThA4, 167 McNeilan, J.D.: GR+AS+NS+SP+SS-TuA11, 115 McWilliams, A.: SE+PS-TuA3, 118 Meagher, L.: BI-MoM5, 83 Medikonda, M.: EL+TF+AS+EM+SS+PS+EN+NMMoM9, 83 Medina, A.A.: EL+TF+AS+EM+SS-TuP2, 125 Meersschaut, J.: TF-ThP1, 180 Mehr, T.: SP+AS+BI+ET+MI+TF-WeA11, 149 Mei, AR.B.: TF+NS+EM-ThM12, 163 Mei, D.: AS-TuP17, 124 Mei, W.N.: AC+TF+SS+MI-MoA1, 91 Mei, Y.: BI-MoA11, 92 Meléndez-Lira, M.: NS-MoM2, 86; TFThP16, 180 Melendez-Lira, M.A.: TF-ThP8, 180 Melese, Y.G.: EL+TF+AS+EM+SS+PS+EN+NMMoM6, 83 Melitz, W.: AS-TuP21, 124
Author Index
Melton, A.G.: EM+TF+AS-ThA11, 167; EM+TF+AS-ThA9, 167 Melvin, T.: SE+NS-MoA3, 97 Melzer, J.I.: TF-ThP5, 180 Membreno, D.: EN+NS-ThM6, 156; EN+TFWeA9, 144 Mendes, G.P.: AS-TuP11, 124; BI+AS-TuA7, 113 Mendez, N.: BI+SS+NS-WeM6, 132 Mendez, P.: BI-TuP3, 125 Meneghini, C.: AS-ThA7, 166 Meng, G.W.: ET+NS+EM-ThM4, 157 Meng, L.: PS-ThP36, 179; SE+PS-TuM3, 108; SE+PS-TuM4, 108 Menguelti, K.: PS-ThP5, 178; PS-ThP7, 178 Menzel, D.: LB+EM+GR+MN+TR-WeA9, 146; SS+NS-TuA1, 119 Méolans, J.G.: MN-TuP1, 126 Merchea, M.: AS-TuP19, 124 Merckling, C.: EM+TF+OX+GR-MoA1, 93 Merrill, M.D.: IS+AS+OX+ET-WeM6, 135 Merte, L.: SS-TuP25, 129; SS-TuP28, 129 Meseck, G.R.: NS-ThP1, 178 Messer, B.: PS-MoM5, 88 Metz, A.: PS-ThP16, 178 Metzler, D.: PS2-TuA1, 118 Mewes, K.A.: MI+EN+BI-TuA3, 116 Mewes, T.: EM+MI-ThA11, 166; MI+EN+BI-TuA3, 116; MI+OX-WeA2, 147 Meyer III, H.M.: AS-TuP12, 124; EM+TF+OX+GR-MoM9, 84 Meyer, D.J.: EM+OX-WeA8, 144; GR+EM+ET+MS+NS-FrM5, 185 Meyer, G.: SP+AS+BI+ET+MI+NS-TuA1, 119 Meyer, H.M.: SS-WeM10, 138 Meyer, J.R.: EM+TF+AS-ThA6, 167 Meyer, R.L.: BI+AS-TuA3, 113 Meyer, T.J.: EN+SS-FrM3, 184 Mhatre, B.S.: SS-MoA6, 98 Miao, X.: GR+EM+ET+MS+NS-FrM11, 185 Michael, J.R.: AS-TuP5, 124 Michalak, T.: EM-ThP8, 175 Michallon, P.: NM+NS+MS+EM-MoA6, 95 Michelmore, A.: PS1-TuA4, 117; PS-ThA8, 170 Michely, T.W.: GR+AS+NS+SP+SS-TuA7, 115; GR+EM+NS+PS+SS+TF-MoM5, 85 Mickel, P.R.: ET+NS+EM-ThM10, 157 Mignot, S.: PS-ThP1, 178 Mignot, Y.: PS2-TuM9, 108; PS-ThP1, 178; PS-WeM1, 137; PS-WeM11, 137; PSWeM4, 137 Mihaila, B.: EM+NS-FrM11, 183 Mikkelsen, A.: EM+MI-ThA6, 166; ET+NS+EM-ThM6, 157; SS+NS-ThA1, 170 Mikulski, P.T.: TR-TuA8, 121 Miller, C.W.: MI+SP+AS-ThM5, 159; TFThP4, 180 Miller, G.P.: SS-TuP4, 129 Miller, I.: EW-WeL4, 142 Miller, J.: IS+AS+SS+EN-TuM9, 105 Miller, J.B.: SS-WeA11, 150; TR+SE-WeM4, 140 Miller, T.J.: EN+AS-ThA8, 167 Millunchick, J.M.: SS+EM-WeA2, 149; SSTuP34, 129 Milosavljevic, V.: PS1-TuM3, 107; PS1WeA1, 148; PS1-WeA4, 148 Milstrey, T.E.: SS-TuP23, 129 Mily, E.: TF+AS-TuA12, 120 Min, B.K.: PS+BI-MoA3, 96 Min, G.J.: PS2-ThM12, 160; SE-TuP1, 128 Min, H.: AS+BI-TuM5, 102 Min, K.S.: PS2-ThM6, 160; PS-ThP28, 179 Minami, M.: PS-ThP14, 178 Minami, T.: EN-ThP12, 175; EN-ThP7, 175
Author Index
Minne, S.C.: SP+AS+BI+ET+MI+TF-WeA8, 149 Minton, T.K.: SS-MoA1, 98 Mirmelstein, A.: AC+MI+SS+TF-MoM9, 82 Mishra, S.R.: AC+TF+SS+MI-MoA8, 91 Misra, S.: TR-TuA11, 121 Mistry, H.: SS-TuP28, 129 Mita, S.: EM+TF+AS-ThA1, 167 Mittemeijer, E.J.: IS+AS+OX+ET-WeM5, 135 Mitterer, C.: SE+NS-MoM6, 88; SE+NSMoM9, 88 Miura, N.: PS+EM-MoM5, 87 Miura, T.: TR-TuP2, 130; VT-TuP8, 130 Miwa, H.: PS2-ThM4, 160 Miwa, K.: MN-TuP4, 126; PS2-ThM11, 160 Miya, G.: PS-ThA1, 170 Miyake, K.: PS2-TuA9, 118 Miyake, M.: SS-TuP17, 129 Miyamoto, J.: LB+EM+GR+MN+TR-WeA2, 146 Miyamoto, K.: MI-WeM1, 135 Miyashita, H.: GR+EM+NS+PS+SS+TFMoM10, 85 Miyata, T.: EN-ThP12, 175; EN-ThP7, 175 Miyawaki, Y.: PS2-MoA7, 97; PS-ThP14, 178 Miyazoe, H.: PS1-ThM12, 160 Miyoshi, J.: TF-ThP11, 180 Mizotani, K.: PS2-TuA4, 118; PS2-TuA9, 118 Mleczko, M.: NS-ThP2, 178 Mo, A.K.: SS-WeM10, 138 Moberg, R.: AS+TF+VT-FrM7, 183 Modine, N.A.: SS+EM-WeA2, 149; SSTuP34, 129 Moeller, R.: ET+SS+GR+SP-FrM7, 184 Moellers, R.: AS-MoA4, 91; AS-ThM11, 155; AS-WeM11, 132 Mohan, P.: VT-MoA1, 99 Mohn, F.: SP+AS+BI+ET+MI+NS-TuA1, 119 Mohondro, R.: EW-WeA6, 145 Mohr, S.: EN+PS-WeM12, 133; EN+PSWeM9, 133 Moisan, M.: PS+TC-WeM1, 136 Molis, S.: EM-TuA8, 114 Molkenboer, F.T.: HI+AS+NS-WeA9, 146; PS-ThA9, 170; PS-ThP15, 178 Moll, N.: SP+AS+BI+ET+MI+NS-TuA1, 119 Mönig, H.: SP+AS+BI+ET+MI+NS-TuA10, 119 Montgomery, A.M.: TF+EM+SE+NS-ThM4, 162 Monton, C.M.: AS+TF+VT-FrM2, 183 Monya, Y.: IS+AS+SS+EN-TuM12, 105 Moody, B.: EM+TF+AS-ThA1, 167 Moon, B.N.: PS-ThA10, 170; PS-ThP33, 179; PS-ThP35, 179 Moon, D.W.: BI-TuP5, 125; BP+AS-SuA1, 78 Moon, J.-B.: MN+AS-MoM8, 85 Moon, J.S.: GR+EM+ET+MS+NS-FrM3, 185; GR+EM+NS+PS+SS+TF-MoM1, 85 Moon, K.: MI+OX-WeA7, 147 Moon, S.Y.: PS2-WeA11, 148 Moore, J.F.: BN+AS-WeA12, 143 Moore, R.: EM+TF+OX+GR-MoM3, 84; GR+AS+NS+SP+SS-TuA11, 115 Moore, T.M.: NS+SP-MoA4, 95 Morales, C.: NS-MoM9, 86 Morales, E.: SS+OX-WeM10, 138 Moras, P.: MI-WeM3, 135 Mordi, G.: GR+EM+ET+MS+NS-FrM7, 185 Morgan, G.: VT-TuA3, 121; VT-TuP6, 130 Morgante, A.: SS+OX-WeM6, 138 Morgen, P.: EM+NS-FrM4, 183; EM+SS+AS+NS-ThM3, 155; EN-ThP5, 175
202
Mori, T.: PS-MoM5, 88 Morita, S.: SP+AS+BI+ET+MI+NS-TuA11, 119 Morita, Y.: PS-ThP13, 178 Moroz, P.: PS-ThP3, 178 Morra, M.M.: TF-ThP5, 180 Morris, B.G.: PS2-TuM6, 108; PS2-TuM9, 108; PS-ThP1, 178; PS-WeM1, 137; PSWeM11, 137 Morrish, F.: BN+AS-WeA4, 143 Morrish, R.: EN+TF-MoA10, 93 Moshar, A.: EW-TuM8, 104; SP+AS+BI+ET+MI+TF-WeA11, 149 Moss, G.: BN+AS-WeA10, 143 Mostafa, S.: SS-TuP27, 129 Mota-Pineda, E.: TF-ThP8, 180 Moulder, J.F.: AS-ThA3, 166; EN+AS-ThA4, 167; EW-TuL5, 111 Mousa, M.B.: NM+NS+MS+EM-MoA8, 95 Mowll, T.: GR+EM+NS+PS+SS+TF-MoM2, 85 Mráz, S.: SE+NS-MoM8, 88 Mucha, J.A.: PS1-TuA10, 117 Mücklich, A.: SE+NS-MoM2, 88 Müthing, J.: AS-TuP1, 124 Muir, B.W.: BI-MoM1, 83 Muirhead, L.: IS+AS+BI+ET+GR+NS-TuA3, 116 Mujahid, M.: EN+TF-MoA11, 93 Mukherjee, D.: EN+NS-MoM6, 84; MI+OXWeA9, 147; OX+EM+MI+NS+TFMoM1, 87 Mukherjee, P.: EN+NS-MoM6, 84; MI+OXWeA9, 147; OX+EM+MI+NS+TFMoM1, 87 Mukherjee, T.: PS-WeM5, 137 Mulhollan, G.A.: VT-MoM3, 90 Muller, D.A.: OX+EM+MI+NS+TF-MoM8, 87 Mullet, C.: NS-ThM6, 159; SS+NS-ThA6, 170 Mullins, D.R.: SS-TuM11, 109 Mulvaney, S.P.: GR+AS+BI+PS+SS-WeM5, 134; GR-ThP9, 176 Mumcu, G.: TF-MoM8, 89 Munakata, T.: SS-TuP31, 129 Muñoz-Flores, J.: AS-TuP16, 124 Munson, A.: GR+AS+NS+SP+SS-TuA11, 115 Munusamy, P.: AS+BI-TuA12, 113; BITuP9, 125 Murakami, Y.: PS-ThP6, 178 Muratore, C.: SE+NS-MoA1, 97; SE-TuP3, 128; TR+SE-WeM1, 140 Murphy, C.J.: EM+SS+AS+NS-ThM9, 155 Murphy, N.R.: SE+PS-TuM9, 108; TF+AS+SS-ThA10, 171 Murphy, P.J.: PS1-TuA3, 117 Muscat, A.J.: EM+TF-WeM6, 133; EMThP16, 175; TF-TuM6, 109 Music, D.: SE+NS-MoM8, 88 Muthinti, G.R.: EL+TF+AS+EM+SS+PS+EN+NMMoM9, 83; NM+AS+MS-MoM3, 86 Mutombo, P.: SP+AS+BI+ET+MI+NSTuA4, 119 Mutoro, E.: IS+AS+SS+EN-TuM5, 105 Muzzillo, C.: EN+TF-TuM10, 104 Myers-Ward, R.L.: GR+AS+BI+PS+SSWeM9, 134; GR+AS+NS+SP+SS-TuA9, 115; GR+EM+ET+MS+NS-FrM3, 185; GR+EM+ET+MS+NS-FrM5, 185; GR+EM+ET+NS+TF-MoA1, 94; GR+EM+NS+PS+SS+TF-MoM1, 85; GR+EM+NS+PS+SS+TF-MoM3, 85; GR-ThP9, 176
— N —
Na, B.-K.: PS-ThP42, 179 Na, J.H.: NS-ThP6, 178
Nabok, A.V.: NS+SP-MoA1, 95 Nachimuthu, P.: EN-ThP10, 175; OX-TuP6, 127; SS-TuP26, 129; TC+EM+AS+TF+EN-ThM5, 162 Nadzeyka, A.: LB+EM+GR+MN+TR-WeA7, 146 Naes, B.E.: AS+NS+SS+TF-WeA7, 143 Nagaiah, P.: EM+TF+OX+GR-MoM3, 84 Nagano, S.: HI+AS+BI+NS-ThM12, 158 Nagarah, J.: PS-WeM12, 137 Nagareddy, V.K.: GR+EM+NS+PS+SS+TFMoM1, 85 Nagata, M.: VT-MoM1, 90 Nagorny, V.: PS2-TuM10, 108; PS-ThA11, 170 Nahif, F.: SE+NS-MoM8, 88 Naik, R.R.: GR+AS+BI+PS+SS-WeM6, 134 Nain, A.S.: BI-TuP10, 125 Naitoh, Y.: PS2-ThM3, 160 Najmaei, S.: GR+EM+NS+SS+TF-ThA3, 169 Nakabayashi, D.: MN-TuP9, 126 Nakagawa, S.: AS-ThM9, 155 Nakahara, S.: HI+AS+BI+NS-ThM6, 158 Nakajima, A.: SS-TuP18, 129 Nakajima, H.: PS-ThP34, 179 Nakajima, S.: SS-MoA8, 98 Nakajima, T.: SS-TuP7, 129 Nakakubo, Y.: PS-ThP20, 179 Nakamura, G.: PS-ThP34, 179 Nakamura, I.: SS-TuP29, 129; SS-TuP30, 129 Nakamura, J.: GR+AS+EM+NS+SS-WeA12, 145; SS-TuP8, 129 Nakamura, K.: PS1-WeA3, 148 Nakamura, M.: PS-MoM2, 88; PS-WeM10, 137 Nakamura, S.: PS-WeM4, 137 Nakano, Y.: EN+TF-TuA12, 114 Nakatsuji, K.: GR+AS+NS+SS-ThM1, 157 Nakayama, D.: PS-MoM6, 88 Nakazaki, N.: PS2-TuA10, 118 Nam, S.H.: VT-TuP11, 130; VT-TuP12, 130; VT-TuP13, 130; VT-TuP14, 130 Nam, S.W.: PS2-ThM6, 160 Nam, S.-W.: TF2-TuA3, 120 Nampoori, V.: EN+TF-WeA11, 144 Nanayakkara, S.: NS-WeA1, 147; SP+AS+BI+ET+MI+TF-WeA4, 149 Nandasiri, M.I.: OX-TuP6, 127 Narayanan, S.: TC+EM+AS-WeA9, 150 Narayanan, V.: EM+TF+OX+GR-MoA7, 93 Narishige, K.: PS-ThP12, 178 Nasir, A.N.: EM+OX-WeA12, 144 Nasse, M.: GR+AS+NS+SP+SS-TuA2, 115 Natarajarathinam, A.: TF+MI-WeA3, 151; TF+SE+NS-WeM10, 139 Nath, A.: GR+EM+ET+MS+NS-FrM5, 185; GR+EM+ET+NS+TF-MoA1, 94; GR+EM+NS+PS+SS+TF-MoM1, 85; GR+EM+NS+PS+SS+TF-MoM3, 85 Nathanson, G.M.: SS-MoA1, 98 Naude, N.: PS+TC-WeM6, 136 Naudé, N.: PS+BI-MoA10, 96; PS+BIMoA11, 96 Nayfeh, O.: GR+EM+ET+MS+NS-FrM8, 185 Nayyar, N.: NS-WeA9, 147 N'Diaye, A.T.: GR+AS+EM+NS+SSWeA10, 145 Neal, C.: BI-TuP11, 125 Nedrygailov, I.: SS-MoM2, 89; SS-MoM3, 89; SS-TuP24, 129 Nefedov, A.: GR-ThP3, 176; OX+SS+TF+MI-MoA10, 96 Negreiros, F.R.: SS+OX-WeM12, 138 Nejati, S.: EN+TF-WeA3, 144 Nelin, C.J.: SS+OX-WeM9, 138 Nelson, A.J.: AC+EN-TuM10, 102; AC+ENTuM3, 102
Nelson, C.M.: EL+TF+BI+AS+EM+SSMoA9, 92 Nelson, F.J.: GR+AS+NS+SP+SS-TuA11, 115 Nemani, S.D.: PS2-TuM2, 108 Nepal, N.: EM+TF+OX+GR-MoM9, 84; GR+EM+ET+NS+TF-MoA1, 94; TF+NS+EM-ThM1, 163 Netzer, F.P.: SS+OX-WeM12, 138 Neunzehn, J.: BI-TuP12, 125 Newbury, J.S.: EM+NS-FrM10, 183 Ney, A.: SS+OX-WeM5, 138 Ney, V.: SS+OX-WeM5, 138 Ng, A.: EM+TF-WeM6, 133 Ng, T.H.: AS+BI-TuA4, 113 Nguyen, H.M.: EL+TF+BI+AS+EM+SSMoA2, 92; EN+TF-WeA7, 144 Nguyen, S.: TF+EN-MoA1, 98 Nichols, M.T.: EM-ThP10, 175; EM-ThP11, 175; EM-TuA10, 114; PS-ThA10, 170 Nie, X.: TR+SE-WeM6, 140 Nie, X.W.: OX-TuP1, 127 Niehuis, E.: AS-MoA4, 91; AS-ThM11, 155; AS-WeM11, 132 Nienhaus, H.: SS-MoM5, 89 Nieto-Zepeda, K.E.: TF-ThP8, 180 Nigge, P.: IS+AS+BI+ET+GR+NS-TuA9, 116 Nijem, N.: EN+AS-ThA7, 167; IS-TuP2, 126 Nikitin, V.: MI+OX-WeA7, 147 Ninomiya, S.: AS-ThM12, 155; AS-TuP6, 124 Nishi, H.: SS-TuP32, 129 Nishi, Y.: EM-ThP10, 175; EM-ThP11, 175; EN-ThP12, 175; PS-ThA10, 170; PSThP35, 179 Nishimori, Y.: MN-TuP4, 126 Nishimoto, S.: SS-TuP17, 129 Nishizuka, T.: PS-ThP34, 179 Nisol, B.: SE+PS-TuA9, 118 Niu, C.: PS-WeM11, 137 Noborisaka, M.: SE-TuP2, 128 Noei, H.: OX+SS+TF+MI-MoA10, 96 Noh, J.: TC-ThP4, 180 Noh, J.H.: TC-ThP4, 180 Nomoto, J.: EN-ThP7, 175 Nonnenmann, S.S.: SP+AS+BI+ET+MI+TFWeA3, 149 Notestein, J.: TF+EN-MoA1, 98 Notingher, I.: BN+AS-WeA1, 143 Notte, J.: HI+AS+NS-WeA10, 146 Noufi, R.: EN+AS-ThA1, 167 Novak, J.: SP-TuP1, 128 Novak, S.: EM+TF+OX+GR-MoM3, 84 Novikova, I.: TF+AS+SS-ThA8, 171 Novoselov, K.: GR+AS+BI+PS+SS-WeM2, 134 Nozaki, T.: EN+PS-WeM1, 133 Nozawa, T.: PS2-MoA11, 97 Nozik, A.J.: EN+NS-MoM3, 84 Ntwaeaborwa, O.M.: SS+OX-WeM11, 138 Nunney, T.: EW-TuL2, 111 Nunney, T.S.: AS+BI-TuM11, 102; ASMoA2, 91; EW-TuL3, 111; GR-ThP1, 176 Nyakiti, L.O.: GR+AS+BI+PS+SS-WeM9, 134; GR+AS+NS+SP+SS-TuA9, 115; GR+EM+ET+MS+NS-FrM3, 185; GR+EM+ET+MS+NS-FrM5, 185; GR+EM+ET+NS+TF-MoA1, 94; GR+EM+NS+PS+SS+TF-MoM1, 85; GR+EM+NS+PS+SS+TF-MoM3, 85; GR-ThP9, 176 Nyns, L.: LB+EM+GR+MN+TR-WeA12, 146
— O —
Oates, T.W.H.: SE+NS-MoM2, 88 Obama, S.: PS-ThA1, 170 Obare, S.: NM+AS+MS-MoM8, 86
203
O'Brien, C.J.: TF+AS-TuA7, 120 O'Brien, K.E.: NS-WeA2, 147 Ocola, L.E.: NS+SP-MoA10, 95 O'Connor, S.: EM+TF+AS-ThA6, 167 Oda, S.: NS+EN-TuM5, 107 Oden, M.: TF+NS+EM-ThM12, 163 Odén, M.: TF+NS+EM-ThM11, 163 O'Donnell, K.P.: AC+TF+SS+MI-MoA9, 91 Oehrlein, G.S.: PS+BI-MoA2, 96; PS+BIMoA6, 96; PS2-TuA1, 118; PS2-WeA11, 148 Oehzelt, M.: GR-ThP3, 176 Oezkaya, B.: TF+AS+SS-ThA1, 171 Offermanns, V.: BI-MoM11, 83 Offi, F.: AC+TF+SS+MI-MoA3, 91; ASThA10, 166 Ogaki, R.: BI+AS-TuA3, 113; BI+SS+NSWeM1, 132; BI-MoM2, 83 Ogawa, S.: HI+AS+BI+NS-ThM6, 158 Ogino, T.: GR-ThP5, 176 Ogitsu, T.: IS+AS+OX+ET-WeM6, 135 Oh, D.-H.: GR-ThP6, 176; NS+EN-TuM1, 107; SS+NS-ThA3, 170 Oh, J.S.: ET-ThP1, 176 Oh, Y.: TC+EM+AS-WeA7, 150 Ohkouchi, T.: GR+EM+NS+PS+SS+TFMoM10, 85 Ohldag, H.: GR+AS+EM+MI+MN-TuM9, 105 Ohlhausen, J.A.: AS-TuP5, 124 Ohmi, H.: PS+TC-WeM3, 136; SE+PSTuA8, 118 Ohno, S.: SS-MoA9, 98 Ohsawa, Y.: PS-ThP34, 179 Ohsiek, S.: EM-TuA11, 114 Ohta, T.: GR+AS+NS+SP+SS-TuA8, 115 Ohtake, A.: SS-TuP8, 129 Ohtake, H.: PS-ThP34, 179; PS-ThP8, 178 Ohtsuka, S.: PS2-ThM9, 160 Ohuchi, F.S.: TC+EM+AS+TF+EN-ThM11, 162 Okamoto, M.: PS-ThP6, 178 Oktyabrsky, S.: EM+TF+OX+GR-MoM3, 84 Okuda, T.: EM+TF+AS-ThA12, 167 Oldham, C.J.: NM+NS+MS+EM-MoA8, 95; TF2-TuA7, 120 O'Leary, L.E.: EM+TF-WeM12, 133 Oleson, B.: EM-ThP15, 175 Oleynik, I.I.: ET+SS+GR+SP-ThA4, 168; GR+AS+EM+MI+MN-TuM10, 105; GR+AS+EM+NS+SS-WeA2, 145 Olmstead, M.A.: TC+EM+AS+TF+ENThM11, 162 Olson, A.: SP-TuP1, 128 Olson, A.G.: PS-ThP35, 179 Olson, D.: AS-TuP18, 124 Olson, D.A.: VT-MoM6, 90 Omberg, R.P.: AC+EN-TuM1, 102 Ondeck, N.: SS-ThM2, 161 Ondracek, M.: ET+SS+GR+SP-FrM4, 184; SP+AS+BI+ET+MI+NS-TuA4, 119 Ondráček, M.: ET+SS+GR+SP-FrM5, 184 Ong, P.: MN-TuM11, 106 Ong, S.W.: SS+EN+OX-ThM4, 161 Onishi, K.: HI+AS+BI+NS-ThM12, 158; PSMoM9, 88 Ono, K.: PS2-ThM9, 160; PS2-TuA10, 118; PS2-TuA12, 118; PS-ThP20, 179 Ono, L.K.: SS-TuP27, 129 Oppen, F.V.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM4, 137 Ortíz, V.: SS-TuP10, 129 Osgood, R.M.: SS+NS-TuA4, 119; SS-TuP2, 129 Oshima, M.: GR+AS+EM+NS+SS-WeA12, 145 Osma, J.F.: BI-TuP6, 125 Osofsky, M.: EM+MI-ThA11, 166
Author Index
Ossowski, J.: TF+AS+SS-ThA2, 171 Ostrikov, K.: TF+EM+SE+NS-ThM1, 162 Otani, T.: SS-ThM12, 161 Ou, Y.-C.: NS-ThP7, 178 O'uchi, S.: EM-ThM1, 156 Outlaw, R.A.: GR+AS+NS+SS-ThM10, 157 Ouyang, W.: ET+NS+EM-ThM3, 157 Ouyang, Z.: PS-ThP36, 179 Overzet, L.J.: PS+EM-MoM3, 87 Owen, A.G.: TF+EM+SE+NS-ThM4, 162 Ozcan, A.: EM+NS-FrM9, 183 Ozimek, P.: EW-WeL5, 142 Ozkirac, S.: EN-ThP13, 175
— P —
Pachauri, N.: MI+OX-WeA12, 147 Pacholski, M.L.: AS+NS+SS+TF-WeA9, 143 Padbury, R.P.: TF+NS+EM-ThM5, 163; TF2TuA10, 120; TF-TuM9, 109 Padron-Wells, G.: PS-MoM9, 88 Page, S.J.: AS+NS+SS+TF-WeA8, 143; ASThM1, 155 Pai, W.W.: LB+EM+GR+MN+TR-WeA8, 146 Paiella, R.: EM+SS+AS+NS-ThM1, 155 Paiva Junior, J.M.F.: TR-TuP7, 130 Pal, S.: NS-MoM9, 86 Palai, R.: AC+TF+SS+MI-MoA1, 91 Palmans, J.: PS2-WeA9, 148 Palmer, J.A.: TF-TuM9, 109 Palmstrom, C.: EM+MI-ThA6, 166 Palmstrøm, C.: EM+MI-ThA10, 166 Palomares Linares, J.M.: PS1-WeA7, 148 Palombo, E.: MB+BI-ThA4, 169 Palomino, R.: NS+AS+SS+SP-WeM12, 136 Pan, H.B.: SS+NS-TuA11, 119 Pan, L.D.: GR-ThP12, 176 Pan, M.H.: SP+AS+BI+ET+MI+NS-TuA12, 119; SS-WeM4, 138 Pan, X.: SS+OX-WeM1, 138 Pan, Y.H.: SS+NS-TuA11, 119 Panaccione, G.: AC+TF+SS+MI-MoA3, 91; AS-ThA10, 166 Pande, K.: SS-TuP3, 129 Pandey, A.: NS-WeA10, 147; PS1-WeA3, 148; TC+EM+AS+TF+EN-ThM5, 162 Pandey, R.R.: BI-TuP17, 125; NS-MoM11, 86 Paniagua, S.A.: SS-TuP14, 129 Pantelides, S.T.: ET+SS+GR+SP-FrM1, 184 Paolini, C.: VT+AS+SS-WeM3, 140 Papa Rao, S.S.: TF2-TuA3, 120 Pappas, D.: PS+TC-WeM11, 136 Pargon, E.: PS2-TuM2, 108; PS-ThP5, 178; PS-ThP7, 178 Paris, A.: GR-ThP3, 176 Park, B.: PS+BI-MoA3, 96 Park, C.: AS-ThA10, 166 Park, C.D.: VT-TuP10, 130; VT-TuP7, 130 Park, C.M.: MI+OX-WeA7, 147 Park, C.-Y.: GR+EM+NS+PS+SS+TFMoM4, 85; GR-ThP6, 176; NS+ENTuM1, 107; SS+NS-ThA3, 170 Park, D.-G.: EM+NS-FrM10, 183 Park, H.: NS+AS+SS+SP-WeM12, 136 Park, J.: PS2-ThM5, 160; SS-ThM1, 161; SSTuP31, 129 Park, J.B.: PS+TC-WeM9, 136; PS-ThP27, 179 Park, J.G.: EM+OX-WeA7, 144; NM+NS+MS+EM-MoA7, 95 Park, J.H.: EN+NS-MoM1, 84; SS-ThM11, 161 Park, J.-H.: GR+EM+NS+PS+SS+TFMoM11, 85 Park, J.-H.: NS-ThP9, 178 Park, J.W.: ET-ThP1, 176 Park, J.Y.: SS-MoM1, 89 Park, K.H.: EN-ThP4, 175 Park, M.L.: PS-ThP23, 179
Author Index
Park, S.J.: PS-WeM9, 137 Park, S.-W.: MN+AS-MoM8, 85 Park, T.H.: NS-WeA1, 147 Park, Y.: EM+OX-WeA11, 144; PS-ThP1, 178 Park, Y.D.: MI-ThP5, 177 Park, Y.J.: BI-TuP5, 125; PS-WeM4, 137 Parkin, J.D.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM9, 137; SP+AS+BI+ET+MI+TFWeA7, 149 Parks, C.: EM-TuA8, 114 Parpia, J.M.: MN-MoA1, 94; MN-TuM10, 106; MN-TuM11, 106 Parracino, M.A.: NS+EN+GR-TuA2, 117 Parsons, G.N.: EN+NS-ThA1, 168; EN+SSFrM1, 184; EN+SS-FrM3, 184; NM+NS+MS+EM-MoA8, 95; NS+EN+GR-TuA10, 117; TF+EN-MoA8, 98; TF2-TuA1, 120; TF2-TuA7, 120 Parthasarathy, A.: MB+BI-ThM9, 158 Pascual, J.I.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM4, 137 Pasic, P.: BI-MoM5, 83; BI-MoM6, 83 Pastewka, L.: TR-TuA1, 121 Patel, A.: EN+AS-ThA6, 167 Patel, A.K.: BI-MoA4, 92 Patel, R.: PS1-TuA7, 117 Patel, S.: EM+MI-ThA10, 166 Paterson, A.: PS-MoM11, 88 Patil, S.: PS-WeM11, 137 Patscheider, J.: SE+PS-TuM5, 108 Pattanaik, G.: EN+NS-ThM9, 156 Patzke, G.R.: NS-ThP1, 178 Paul, D.F.: NS-ThM12, 159 Paul, J.: PS2-TuM12, 108 Paul, P.: NS+SP-MoA2, 95 Paul, W.: AS-WeM11, 132 Paulitsch, J.: SE+NS-MoM5, 88 Payzant, E.A.: EN+TF-TuM10, 104 Pearton, S.J.: EM-ThP1, 175; EM-ThP2, 175; EM-TuM9, 103 Peck, J.: EN-ThP11, 175 Peckerar, M.: EM+OX-WeA9, 144 Pedersen, K.: EM+NS-FrM4, 183 Pegalajar-Jurado, A.: MB+BI-ThM3, 158 Pei, D.: EM-ThP10, 175; EM-ThP11, 175 Pei, L.: LB+EM+GR+MN+TR-WeA3, 146 Peixoto, T.: SS+EM-WeA11, 149; SS-TuP21, 129; TF+AS+SS-ThA3, 171 Pelant, I.: NS-MoM5, 86 Pelissier, B.: NM+NS+MS+EM-MoA6, 95 Pelleymounter, D.: PS-ThP39, 179 Pelster, A.: AS-TuP1, 124 Peng, G.: SS-MoA7, 98; SS-TuP1, 129 Peng, Q.: EN+SS-FrM3, 184 Peng, W.: EM+TF-WeM4, 133; EN+TFWeA7, 144 Perdue, S.M.: SP+AS+BI+ET+MI+NS-TuA3, 119 Perea, D.E.: AS+NS+SS+TF-WeA3, 143; AS+NS+SS+TF-WeA4, 143; NS-WeA10, 147 Pereira, L.: AC+TF+SS+MI-MoA6, 91 Pereira, M.: AC+EN-TuM5, 102 Pereira, S.: BI-MoM5, 83 Perera, A.G.U.: EM+TF+AS-ThA9, 167; EMThP6, 175 Peres, P.: IS+AS+OX+ET-WeM11, 135 Perez Medina, G.J.: GR+EM+ET+NS+TFMoA7, 94 Pérez Quintero, K.J.: MN+AS-MoM3, 85 Perez Roldan, MJ.: NS+EN+GR-TuA2, 117 Perez, R.: SP+AS+BI+ET+MI+NS-TuA10, 119; SP+AS+BI+ET+MI+NS-TuA11, 119 Pérez, R.: SS-ThA7, 171 Perez, V.P.: BI-TuP8, 125
204
Perkins, F.K.: TF+AS-TuA3, 120 Perng, Y.-C.: EM+TF+AS-ThA3, 167; EN+NS-ThM6, 156 Pernites, R.B.: EN+NS-ThM12, 156 Perrenoud, J.: TF+AS-WeA3, 151 Perret, E.: IS+AS+OX+ET-WeM3, 135 Perrier, P.: MN-TuP1, 126 Perrine, K.A.: AS-TuP20, 124; SS-ThA1, 171; SS-ThA2, 171; SS-WeM11, 138 Perriot, R.: GR+AS+EM+MI+MN-TuM10, 105 Perry, J.W.: SS-TuP14, 129 Perry, S.S.: BI+AS-TuA10, 113; TR+BITuM2, 110; TR+SE-WeM5, 140; TRTuA7, 121 Persson, M.: SS-MoA11, 98 Persson, O.: ET+NS+EM-ThM6, 157 Pertsin, A.J.: BI+SS+AS-TuM2, 103 Pesin, D.: EM+OX-WeA1, 144 Petaccia, L.: AC+TF+SS+MI-MoA3, 91; GRThP3, 176 Petersen Barbosa Lima, L.: EM-ThP7, 175 Petersen, E.: NS+AS+SS+SP-WeM2, 136 Peterson, B.: NM+AS+MS-MoM3, 86 Peterson, K.: PS-ThA4, 170 Petford-Long, A.: IS+AS+BI+ET+GR+NSTuA7, 116 Pethe, S.: EN+TF-TuM11, 104; TF+ASWeA11, 151 Petrik, N.G.: SS+EN+OX-ThM3, 161; SS+EN+OX-ThM5, 161; SS-TuM5, 109; SS-TuM6, 109 Petrosky, J.C.: AC+TF+SS+MI-MoA1, 91; AC+TF+SS+MI-MoA7, 91 Petrov, I.: TF+AS-TuA4, 120; TF+NS+EMThM12, 163 Petrovykh, D.Y.: AS-TuP11, 124; BI+ASTuA7, 113 Petterson, M.K.: GR+EM+ET+MS+NSFrM11, 185 Pettit, C.: EN+TF-TuM9, 104 Pfeiffer, D.: EM+NS-FrM10, 183 Pham, C.D.: TF+NS+EM-ThM6, 163 Pham, H.: TC+EM+AS+TF+EN-ThM11, 162 Pham, T.: PS2-TuM2, 108 Phan, M.H.: MI-ThP2, 177; NS-MoM8, 86; NS-MoM9, 86 Phaneuf, M.W.: HI-ThP3, 177 Phaneuf, R.J.: TF+EM+SS-ThA10, 172; TFMoM3, 89 PhanVu, H.: PS2-TuM10, 108 Phillipp, F.: IS+AS+OX+ET-WeM5, 135 Phillpot, S.R.: EN+SS-FrM6, 184; OX+SS+TF+MI-MoA1, 96; OX-TuP1, 127; OX-TuP3, 127; OX-TuP4, 127; SS+NS-ThA4, 170; TR+BI-TuM10, 110; TR-TuP1, 130 Piallat, F.: NM+NS+MS+EM-MoA6, 95 Piao, H.: AS+BI-TuM12, 102; AS+TF+VTFrM1, 183 Pierce, C.C.: TF-ThP5, 180 Pillatsch, L.: HI+AS+NS-WeA10, 146 Pimenta-Barros, P.: PS2-TuM5, 108 Pinna, N.: TF+NS+EM-ThM9, 163 Pioda, A.: EW-TuL6, 111 Pipe, K.P.: EM+SS+AS+NS-ThM13, 155 Pireaux, J.J.: AS-MoA2, 91 Pitenis, A.A.: TR-TuA9, 121 Pittenger, B.: SP+AS+BI+ET+MI+TF-WeA8, 149 Pitters, J.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM2, 137 Pitters, J.L.: HI+AS+NS-WeA7, 146 Piva, P.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM2, 137 Plaue, J.: AC+EN-TuM10, 102 Pleticha, D.: EN-ThP3, 175
Pluchery, O.: EM+NS-FrM3, 183 Pluntze, A.M.: TR+SE-WeM12, 140 Poda, A.: TR+SE-WeM10, 140 Podkolzin, S.: SS-WeA10, 150 Podraza, N.J.: EL+TF+AS+EM+SS+PS+EN+NMMoM1, 83; EL+TF+AS+EM+SS+PS+EN+NMMoM4, 83 Poelker, M.: VT-MoM5, 90; VT-TuP16, 130 Poelsema, B.: HI+AS+NS-WeA3, 146 Poeppelmeier, K.: TF+EN-MoA1, 98 Pohl, K.: SS-TuP4, 129 Pohler, M.: SE+NS-MoM9, 88 Pointet, J.: OX-TuP2, 127 Polak, S.: PS-ThA6, 170 Polcawich, R.: EM-ThM3, 156 Polcik, P.: SE+PS-TuM10, 108 Polina, A.: HI+AS+BI+NS-ThM5, 158 Polly, S.: EN+NS-MoM10, 84 Polyakov, A.Y.: EM-TuM9, 103 Ponduri, S.: EN+PS-WeM3, 133 Ponomarev, M.V.: EL+TF+AS+EM+SS+PS+EN+NMMoM6, 83; TC+EM+AS+TF+EN-ThM2, 162 Pontoni, D.: NS+EN+GR-TuA1, 117 Pookpanratana, S.: TF+EM+SS-ThA6, 172 Poon, J.: MI+EN+BI-TuA7, 116 Popov, E.O.: SE+NS-MoA7, 97 Popovitz-Biro, R.: NS+AS+SS+SP-WeM4, 136 Porcher, W.: EN+NS-ThM11, 156 Porter, D.L.: AC+EN-TuM1, 102 Porter, L.M.: TC+EM+AS-WeA9, 150 Portoles, J.F.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM10, 137 Posseme, N.: PS2-TuM2, 108 Postma, A.: BI-MoM1, 83 Potapenko, D.V.: SS+NS-TuA4, 119 Potbhare, S.: EM+OX-WeA9, 144 Pou, P.: SP+AS+BI+ET+MI+NS-TuA11, 119 Pouliquen, S.: EN+PS-WeM5, 133 Povey, I.M.: EM+TF+OX+GR-MoA6, 93 Powell, C.J.: AS-MoM3, 82; AS-MoM6, 82 Powell, L.J.: IS-TuP3, 126 Pradeep, N.: NS+SP-MoA8, 95 Pradelles, J.: PS2-TuM5, 108 Pradhan, P.: EL+TF+AS+EM+SS+PS+EN+NMMoM1, 83 Prajapati, A.K.: VT+AS+SS-WeM11, 140 Prasad, S.V.: LB+EM+GR+MN+TR-WeA1, 146 Prater, C.B.: SP+AS+BI+ET+MI+TF-WeA9, 149 Premkumar, A.: TF-ThP1, 180 Proie, R.: EM-ThM3, 156 Prokes, S.M.: EM+TF+OX+GR-MoA10, 93; NS+EN-TuM2, 107 Proksch, R.: EW-TuM8, 104; SP+AS+BI+ET+MI+TF-WeA11, 149 Prosa, T.J.: AS-TuP18, 124 Provo, J.L.: AC+TF+SS+MI-MoA4, 91 Ptschelinzew, N.: EM-ThP14, 175 Pu, H.: GR+AS+NS+SP+SS-TuA2, 115; SSTuP3, 129 Pu, Y.K.: PS1-TuA10, 117 Pulskamp, J.: EM-ThM3, 156 Purabia, T.: VT+AS+SS-WeM11, 140 Putkonen, M.: NM+NS+MS+EM-MoA1, 95 Py, M.: AS-ThM9, 155
— Q —
Qiao, L.: OX-TuP5, 127 Qin, S.Y.: ET+NS+EM-ThM3, 157; ET+NS+EM-ThM4, 157 Qin, X.: EM+TF+OX+GR-MoM5, 84 Qu, L.: IS-TuP3, 126
Qu, T.: TF+MI-WeA1, 151 Quardokus, R.C.: AS-TuP26, 124; ET+SS+GR+SP-ThA3, 168 Quinlan, R.A.: GR+AS+NS+SS-ThM10, 157 Quiñones-Galván, J.G.: NS-MoM2, 86; TFThP16, 180 Quintero, M.: OX-TuP6, 127 Quinton, J.S.: SS+NS-ThA7, 170
— R — Rack, P.D.: HI-ThP3, 177; NS+SP-MoA4, 95; TC-ThP4, 180; TF+EM+SE+NSThM3, 162 Rader, O.: MI-WeM5, 135 Radi, A.: TF+AS-TuA10, 120 Rading, D.: AS-ThM11, 155; AS-WeM11, 132 Radja, A.: EL+TF+BI+AS+EM+SS-MoA2, 92 Radu, I.: TF-ThP1, 180 Radue, E.: TF+AS+SS-ThA8, 171 Radvanyi, E.: EN+NS-ThM11, 156 Rafaja, D.: SE+NS-MoM3, 88 Rafati, A.: AS+BI-TuA11, 113 Rafik, A.: GR+AS+EM+NS+SS-WeA8, 145 Rago, P.B.: EM+MI-ThA2, 166 Rahinov, I.: SS-MoM4, 89 Rahman, T.S.: AS+BI-TuA1, 113; AS+BITuA3, 113; GR+EM+ET+NS+TF-MoA2, 94; MI+EN+BI-TuA8, 116; NS+EN+GRTuA7, 117; NS-MoM10, 86; NS-WeA9, 147; SS+NS-ThA9, 170 Rai, B.K.: AC+TF+SS+MI-MoA8, 91 Raigoza, A.: BI-TuP18, 125 Raitses, Y.: PS2-WeA4, 148; PS-ThP9, 178 Raj, R.: TF+EN-MoA3, 98 Raja, L.: PS2-MoA11, 97 Rajachidambaram, M.S.: TC+EM+AS+TF+EN-ThM5, 162 Rajan, K.: TR+BI-TuM10, 110 Rajput, P.: AS-ThA7, 166 Raley, A.: PS-MoM5, 88 Ralsano, R.: ET+SS+GR+SP-FrM6, 184 Raman, P.: PS-ThP36, 179; SE+PS-TuM3, 108 Raman, S.N.: AS-ThA3, 166; EN+AS-ThA4, 167 Raman, T.: GR-ThP8, 176; SS-WeA1, 150 Ramana, C.V.: NS-ThP13, 178; TF+AS+SSThA11, 171; TF+AS+SS-ThA9, 171 Ramasamy, R.: EN+NS-ThM10, 156 Ramos, R.: PS-ThP7, 178 Randall, J.N.: NS+SP-MoA7, 95 Ranga, A.: BI-MoA1, 92 Rangan, S.: EN+AS-ThA9, 167; OX+SS+TF+MI-MoA6, 96 Ranish, J.: TF+AS-TuA11, 120 Ranjan, A.: PS2-TuM1, 108; PS-MoM5, 88; PS-ThP16, 178 Ranjan, V.: EL+TF+AS+EM+SS+PS+EN+NMMoM1, 83 Ranson, P.: MN+AS-MoM6, 85; PS1-ThM3, 160 Rao, M.: MN+AS-MoM5, 85 Rao, M.V.: GR+EM+NS+PS+SS+TF-MoM1, 85 Rappe, A.M.: SS+OX-WeM10, 138 Raschke, M.B.: NS-WeA7, 147 Raskin, J.-P.: EM-ThM4, 156 Rasmussen, A.M.H.: SS-ThM5, 161 Raso, R.: AS+NS+SS+TF-WeA8, 143 Rathbone, J.: VT-MoA10, 99; VT-TuP2, 130 Ratner, B.D.: BI+AS-TuA1, 113; IS+AS+BI+ET+GR+NS-TuA1, 116 Rauf, S.: PS2-MoA3, 97; PS2-TuM11, 108 Ray, R.I.: MB+BI-ThA1, 169 Raymond, M.: EM+NS-FrM9, 183 Raynaud, P.: TF+NS+EM-ThM3, 163
205
Real, M.: LB+EM+GR+MN+TR-WeA10, 146 Rebelo de Figueiredo, M.: SE+NS-MoM6, 88 Reddemann, L.: TF+EM+SS-ThA9, 172 Reddy, D.: EM+OX-WeA1, 144 Reed, D.T.: AC+EN-TuM9, 102 Reeves, R.: TF+EM+SE+NS-ThM5, 162 Regan, J.: MB+BI-ThA8, 169 Register, L.F.: EM+OX-WeA1, 144 Rehbein, S.: BP+AS-SuA3, 78 Reid, D.: NS+AS+SS+SP-WeM2, 136 Reihs, K.: TF+EM+SS-ThA9, 172 Reilly, M.: EN-ThP11, 175 Reimhult, E.: NS+EN+GR-TuA1, 117 Reinhard, D.A.: AS-TuP18, 124 Reinke, P.: EM+NS-FrM6, 183; EN-ThP1, 175 Ren, F.: BI-TuP6, 125; EM-ThP1, 175; EMThP2, 175; EM-TuM9, 103; LB+EM+GR+MN+TR-WeA7, 146 Ren, H.: PS-ThP35, 179 Ren, T.: TF+EM+SS-ThA6, 172 Renaux, F.: PS1-TuA8, 117; SE+NS-MoA4, 97 Rendon, E.A.: AS-TuP28, 124 Reniers, F.: PS+TC-WeM12, 136; PS-ThP2, 178; PS-ThP31, 179; PS-ThP32, 179; SE+NS-MoA4, 97; SE+PS-TuA9, 118 Reshchikov, M.A.: EM+TF+AS-ThA4, 167 Resta, A.: GR+EM+NS+SS+TF-ThA6, 169 Restaino, D.: EM-TuA8, 114 Reuveny, A.: MN-MoA8, 94 Revelli, J.C.: EM-ThP4, 175 Revenko, I.: EW-TuM8, 104; SP+AS+BI+ET+MI+TF-WeA11, 149 Reviakine, I.: BI-MoM10, 83 Reyes-Morales, J.: TR-TuP5, 130 Reznicek, A.: EL+TF+AS+EM+SS+PS+EN+NMMoM9, 83 Rhallabi, A.: AS-MoM4, 82 Rhim, S.: GR+AS+NS+SP+SS-TuA2, 115 Ribeiro, F.: TF+EN-MoA1, 98 Rice, T.: EM+TF+AS-ThA1, 167 Richardson, C.J.K.: TF+EM+SS-ThA10, 172 Richmann, M.K.: AC+EN-TuM9, 102 Richter, C.A.: TF+EM+SS-ThA6, 172 Richter, R.P.: BI+AS-TuA9, 113; BI+SS+NSWeM10, 132 Ricker, J.E.: VT-MoM6, 90 Riddle, Y.: TR+SE-WeM5, 140 Riedel, S.: PS2-TuM12, 108 Riedl, B.: PS+BI-MoA11, 96 Rieth, L.W.: TF-WeM2, 139 Rigby-Singleton, S.: BI+SS+AS-TuM1, 103 Rimal, S.: PS-WeM5, 137 Rinzler, A.G.: GR+EM+ET+MS+NS-FrM11, 185 Rittschof, D.: MB+BI-ThA6, 169 Ritz, E.: TC+EM+AS+TF+EN-ThM12, 162 Rizzo, A.: AC+TF+SS+MI-MoA3, 91 Roach, W.M.: VT+AS+SS-WeM10, 140; VT+AS+SS-WeM6, 140; VT+AS+SSWeM9, 140 Robbins, M.O.: TR-TuA1, 121 Roberts, A.J.: AS+BI-TuM10, 102; AS+BITuM3, 102; AS+NS+SS+TF-WeA8, 143; AS-TuP13, 124 Roberts, C.J.: BI+SS+AS-TuM1, 103; BI+SS+NS-WeM12, 132; SP+AS+BI+ET+MI+NS-TuA9, 119 Roberts, N.A.: NS+SP-MoA4, 95; TF+EM+SE+NS-ThM3, 162 Robertson, J.: EM+TF+OX+GR-MoM10, 84 Robinson, J.T.: GR+AS+BI+PS+SS-WeM5, 134; GR+AS+BI+PS+SS-WeM9, 134; GR+AS+NS+SP+SS-TuA8, 115; GR+AS+NS+SS-ThM3, 157 Robinson, M.: BN+AS-WeA4, 143
Author Index
Robinson, Z.R.: GR+AS+NS+SP+SS-TuA11, 115; GR+EM+NS+PS+SS+TF-MoM2, 85 Robson, M.: PS-MoM1, 88; PS-MoM9, 88 Roca i Cabarrocas, P.: EL+TF+AS+EM+SS+PS+EN+NMMoM3, 83 Rockett, A.: TF+NS+EM-ThM12, 163 Rodenhausen, K.B.: EL+TF+BI+AS+EM+SS-MoA1, 92 Rodgers, M.: EM-ThP8, 175 Rodriguez de Anda, E.: TR-TuP5, 130 Rodriguez Perez, A.: SP+AS+BI+ET+MI+NS-TuA3, 119 Rodriguez, E.: TR-TuP6, 130 Rodriguez, G.: MN-TuP3, 126 Rodriguez, L.N.J.: IS+AS+OX+ET-WeM9, 135 Rodriguez-Santiago, V.: PS+TC-WeM11, 136 Rogalev, A.: SS+OX-WeM5, 138 Rogers, B.R.: SS+OX-WeM4, 138; SS-TuP5, 129 Rogers, J.A.: EM+SS+AS+NS-ThM5, 155 Rogström, L.: TF+NS+EM-ThM11, 163 Rohrer, G.: EM-TuA7, 114 Rojas, G.: NS+AS+SS+SP-WeM11, 136 Roldan Cuenya, B.: SS+NS-ThA8, 170; SS+NS-TuA7, 119; SS-TuP25, 129; SSTuP27, 129 Roldan Cueyna, B.: SS-TuP28, 129 Romm, L.: PS-WeM12, 137 Romriell, N.R.: TF+EM+SS-ThA8, 172 Ronkainen, H.: TF+NS+EM-ThM10, 163 Ronsheim, P.: EM+NS-FrM10, 183 Roodenko, K.: EL+TF+BI+AS+EM+SSMoA2, 92; SS-TuP21, 129 Roozeboom, F.: TF-TuM11, 109; TF-TuM5, 109 Rosa, L.: GR+EM+ET+NS+TF-MoA7, 94 Rose, M.: VT-TuM9, 110 Rose, V.: MI+SP+AS-ThM1, 159 Rosenauer, A.: NS+AS+SS+SP-WeM3, 136 Rosenberg, R.A.: MI+SP+AS-ThM12, 159 Rosenfeld, D.H.: TF+AS-WeA1, 151 Rosenhahn, A.: BI-TuP14, 125; BI-TuP16, 125; BN+AS-WeA11, 143; IS-TuP4, 126; MB+BI-ThA3, 169 Rosenmann, D.: MI+SP+AS-ThM12, 159 Ross, F.M.: GR+EM+NS+PS+SS+TFMoM8, 85 Ross, N.: PS-WeM5, 137 Rossi, F.: BI+SS+AS-TuM12, 103; NS+EN+GR-TuA2, 117 Rosslee, C.: PS2-TuM2, 108 Rossnagel, S.M.: TF2-TuA3, 120 Rosso, K.M.: NS-ThM2, 159 Rotello, V.: BI+SS+NS-WeM3, 132 Rotenberg, E.: GR+EM+ET+NS+TF-MoA8, 94 Rougemaille, N.: GR+AS+EM+NS+SSWeA10, 145 Rousseau, R.: SS+EN+OX-ThM5, 161 Roussel, P.: AC+EN-TuM3, 102 Routaboul, L.: GR+EM+ET+NS+TF-MoA7, 94 Rowe, J.E.: GR+AS+BI+PS+SS-WeM10, 134; GR+AS+NS+SP+SS-TuA11, 115; GR+EM+ET+MS+NS-FrM8, 185; GRThP11, 176; MI+OX-WeA11, 147 Roy, A.K.: SE-TuP3, 128 Roy, K.: MI-ThP3, 177 Roy-Garofano, V.: PS+TC-WeM1, 136 Rozen, J.: EM+TF+OX+GR-MoA7, 93 Rubio-Zuazo, J.: AS+TF+VT-FrM5, 183 Rubloff, G.W.: EN+AS-ThA3, 167; TF+ENMoA6, 98; TF-MoM3, 89 Ruda, K.: EW-WeL5, 142 Rudolph, M.: PS2-TuM12, 108 Rudy, A.: TR+BI-TuM2, 110 Ruffo, M.: TF-WeM1, 139
Author Index
Ruggieri, C.: OX+SS+TF+MI-MoA6, 96 Rumbach, P.: PS+EM-MoM11, 87 Ruocco, A.: AC+TF+SS+MI-MoA3, 91 Ruoff, R.S.: GR+AS+NS+SP+SS-TuA11, 115; GR+AS+NS+SP+SS-TuA2, 115 Ruppalt, L.: EM+TF+OX+GR-MoA10, 93 Rusu, C.: PS-MoM11, 88 Rutt, H.N.: HI+AS+BI+NS-ThM3, 158 Ruzic, D.N.: EN-ThP11, 175; PS-ThP36, 179; SE+PS-TuM3, 108; SE+PS-TuM4, 108; TC+EM+AS+TF+EN-ThM12, 162 Ryadnov, M.G.: BI+SS+AS-TuM11, 103 Ryan, E.T.: EM-TuA11, 114; EM-TuA8, 114 Ryan, K.E.: TR-TuA8, 121 Rye, M.J.: AS-TuP5, 124 Rysz, J.: TF+AS+SS-ThA2, 171 Ryu, S.: AS+NS+SS+TF-WeA10, 143 Ryzhkov, M.V.: AC+MI+SS+TF-MoM9, 82
— S —
Sabitova, A.: EM+TF+AS-ThA10, 167 Sabnis, V.A.: EN+TF-TuA9, 114 Sachdev, H.: GR-ThP3, 176 Sadowski, J.T.: GR-ThP11, 176; IS+AS+BI+ET+GR+NS-TuA8, 116 Safron, N.: GR+AS+EM+NS+SS-WeA9, 145 Sahalov, H.: EM+NS-FrM6, 183 Saini, K.K.: BI-TuP17, 125; NS-MoM11, 86 Saito, N.: GR-ThP7, 176; NS-ThP11, 178; NS-ThP4, 178; NS-ThP8, 178; PS-ThP29, 179 Saito, S.: MN-TuP9, 126 Saito, Y.: VT-TuA10, 121 Saitoh, E.: IS+AS+OX+ET-WeM10, 135 Sakai, M.: SS-TuP18, 129 Sakai, Y.: AS-ThM12, 155; AS-TuP6, 124 Sakakibara, R.: MN-TuM11, 106 Sakalas, P.: GR+AS+NS+SS-ThM2, 157 Sakamoto, K.: MI-WeM1, 135 Sakurai, M.: GR+AS+EM+NS+SS-WeA12, 145 Salaün, A.: TF+MI-WeA7, 151 Salditt, T.: IS-TuP4, 126 Sales, B.C.: SP+AS+BI+ET+MI+NS-TuA12, 119 Salib, D.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM5, 137 Salmeron, M.: SS-ThA7, 171 Salter, T.L.: AS-MoA9, 91 Saly, M.J.: TF+NS+EM-ThM2, 163 Samala, S.K.: TF+AS+SS-ThA9, 171 Samaraweera, R.L.: EM+TF+AS-ThA11, 167; EM+TF+AS-ThA9, 167 Samuelson, L.: ET+NS+EM-ThM6, 157 Samukawa, S.: EN+PS-WeM11, 133; MNTuP4, 126; PS1-TuA9, 117; PS2-ThM10, 160; PS2-ThM11, 160; PS2-ThM9, 160; PS-MoM6, 88 Sánchez-Portal, D.: SS-ThA7, 171 Sanderson, D.: VT-TuP6, 130 Sandin, A.A.: GR+AS+BI+PS+SS-WeM10, 134; GR+AS+NS+SP+SS-TuA11, 115; GR+EM+ET+MS+NS-FrM8, 185; GRThP11, 176; MI+OX-WeA11, 147 Sanghadasa, M.: MN-MoA6, 94; MN-TuM6, 106 Sangiovanni, D.G.: TF+AS-TuA4, 120; TF+AS-TuA9, 120 Sankaran, R.M.: PS+EM-MoM11, 87; PS+EM-MoM8, 87 Sankarapandian, M.: PS-ThP1, 178 Sano, N.: AS-MoA1, 91; AS-TuP4, 124 Santana, J.: MI+OX-WeA10, 147 Santeufemio, C.: AS+BI-TuA10, 113 Santos, P.V.: NS+SP-MoA9, 95 Santoyo-Salazar, J.: NS-MoM2, 86 Saraf, S.: SS-TuP12, 129 Saranu, S.: EW-WeL1, 142 Sardela, M.: TF+NS+EM-ThM12, 163
206
Sarkar, A.: EL+TF+AS+EM+SS-TuP1, 125 Sarkissan, A.: PS+BI-MoA11, 96 Sarkissian, A.: PS+TC-WeM1, 136 Sasaki, M.: MN-TuP5, 126; PS-ThP8, 178 Sasi-Szabo, L.A.: IS+AS+BI+ET+GR+NSTuA3, 116 Sato, S.: HI+AS+BI+NS-ThM6, 158; NMTuP1, 127 Sauer, V.T.K.: MN+AS-MoM9, 85; MNMoA7, 94; MN-TuM5, 106; MN-TuM9, 106 Saulnier, N.: PS2-TuM9, 108 Saurabh, S.: IS-TuP3, 126 Sawai, K.: MN-TuP9, 126 Sawatzky, G.: TF+AS-TuA10, 120 Sawyer, W.G.: TR+BI-TuM10, 110; TR+SEWeM9, 140; TR-TuA3, 121; TR-TuA9, 121 Scarel, G.: TF+EN-MoA7, 98 Schaafhausen, S.: EM+TF+AS-ThA10, 167 Schaekers, M.: TF-ThP1, 180 Schafer, K.C.: IS+AS+BI+ET+GR+NSTuA3, 116 Schafer, S.: MI+OX-WeA2, 147 Schäfer, S.: EM+MI-ThA11, 166 Schamberger, F.: PS1-WeA10, 148 Schanze, K.: MB+BI-ThM9, 158 Scheele, M.: SS-MoM2, 89 Schein, M.: VT-TuA3, 121; VT-TuP6, 130 Scheltjens, G.: SE+PS-TuA9, 118 Schlaf, R.: ET+SS+GR+SP-ThA10, 168; ET+SS+GR+SP-ThA11, 168; TF+EM+SS-ThA11, 172 Schlesser, R.: EM+TF+AS-ThA1, 167 Schlögl, M.: SE+NS-MoM5, 88; SE+NSMoM6, 88 Schlueter, J.A.: NS+AS+SS+SP-WeM11, 136 Schmid, A.K.: GR+AS+EM+NS+SS-WeA10, 145 Schmidt, A.B.: MI-WeM1, 135 Schmidt, D.: EL+TF+BI+AS+EM+SSMoA1, 92 Schmidt, W.G.: SS-TuP21, 129 Schmitt, J.: OX+EM+MI+NS+TF-MoM10, 87 Schmitz, A.: GR+EM+ET+MS+NS-FrM3, 185 Schnadt, J.: IS+AS+SS+EN-TuM12, 105 Schneider, C.M.: MI+OX-WeA1, 147 Schneider, G.: BP+AS-SuA3, 78 Schneider, J.M.: SE+NS-MoM8, 88 Schnekenburger, J.: AS+BI-TuM1, 102 Schneller, E.: EN+TF-TuM11, 104 Schoenfeld, W.V.: NM+NS+MS+EM-MoA9, 95; TF+AS-WeA7, 151; TF+AS-WeA9, 151 Schofield, M.: GR+AS+NS+SP+SS-TuA2, 115; SS-TuP3, 129 Schreiber, D.: MN-MoA8, 94 Schrimpf, R.D.: EM+SS+AS+NS-ThM11, 155 Schröder, U.: GR+AS+NS+SP+SS-TuA7, 115 Schubert, E.: EL+TF+BI+AS+EM+SSMoA1, 92 Schubert, E.F.: TF+SE+NS-WeM1, 139 Schubert, M.: EL+TF+BI+AS+EM+SSMoA1, 92; LB+EM+GR+MN+TRWeA10, 146 Schuengel, E.: EN+PS-WeM12, 133; EN+PSWeM9, 133 Schuhmacher, M.: IS+AS+OX+ET-WeM11, 135 Schuller, I.: AS+TF+VT-FrM2, 183 Schulte, K.: GR+AS+NS+SP+SS-TuA7, 115 Schultz, B.D.: EM+MI-ThA10, 166; EM+MIThA6, 166 Schultz, J.A.: BN+AS-WeA12, 143
Schulze, J.: EN+PS-WeM12, 133; EN+PSWeM9, 133 Schulze, R.K.: EM+NS-FrM11, 183 Schwab, Y.: TF+EN-MoA7, 98 Schwaederle, L.: PS+EM-MoM3, 87 Schwartz, C.: EM-ThP1, 175 Schwartz, T.: MB+BI-ThA3, 169 Schwarz, U.D.: SP+AS+BI+ET+MI+NSTuA10, 119 Schweigert, D.: PS-ThP10, 178 Schweigert, I.: PS-ThP17, 178 Schweikert, E.: AS-ThM5, 155 Schwendemann, T.C.: SP+AS+BI+ET+MI+NS-TuA10, 119 Schwerdtle, T.: AS-TuP1, 124 Scott, D.J.: BI+SS+AS-TuM1, 103 Scott, T.B.: AC+TF+SS+MI-MoA6, 91 Scurr, D.J.: BI-MoA8, 92; BN+AS-WeA10, 143 Seah, M.P.: AS-ThA2, 166 Seal, S.S.: AS+BI-TuA12, 113; BI-TuP11, 125; BI-TuP13, 125; BI-TuP7, 125; BITuP8, 125; MN-TuP6, 126; NS+AS+SS+SP-WeM2, 136; SS-TuP12, 129 Sedlmaier, J.: AS-WeM6, 132 Seebauer, E.G.: SS+EM-WeA7, 149; SS+EN+OX-ThM4, 161 Seeger, S.: NS-ThP1, 178 Sefa, M.: VT-TuP3, 130 Sefat, A.S.: SP+AS+BI+ET+MI+NS-TuA12, 119 Seitz, O.: EL+TF+BI+AS+EM+SS-MoA2, 92; EM+NS-FrM3, 183; EM+TF-WeM4, 133; EN+TF-WeA7, 144 Seki, T.: AS-ThM9, 155 Sekiguchi, A.: NM+MS-TuM1, 106 Sekine, M.: GR+AS+NS+SS-ThM9, 157; PS1-TuM5, 107; PS2-MoA7, 97; PS2ThM5, 160; PS2-TuA7, 118; PS2-WeA3, 148; PS-ThP14, 178; PS-ThP25, 179 Sellers, J.R.V.: SS-TuM12, 109 Selvamanickam, V.: EN+TF-TuA8, 114 Sementa, L.: SS+OX-WeM12, 138 Semetey, V.: MB+BI-ThM2, 158 Semidey-Flecha, L.: GR+AS+EM+NS+SSWeA11, 145 Semonin, O.E.: EN+NS-MoM3, 84 Senevirathna, M.K.I.: EM+TF+AS-ThA11, 167; EM+TF+AS-ThA9, 167; EM-ThP6, 175 Senkbeil, T.: BN+AS-WeA11, 143; IS-TuP4, 126 Senor, D.J.: AC+EN-TuM1, 102 Seo, B.H.: PS-ThP4, 178 Seo, H.: EN+NS-MoM2, 84 Seo, H.-C.: GR+EM+ET+MS+NS-FrM3, 185 Seo, J.: NS-ThP9, 178 Seo, J.M.: SS-TuP9, 129 Seo, J.-W.T.: NS+EN-TuM12, 107 Seo, S.C.: PS2-TuM6, 108 Seo, S.J.: AS-TuP22, 124 Seog, J.: PS+BI-MoA2, 96; PS+BI-MoA6, 96 Seong, D.J.: PS-ThP4, 178 Serov, A.: IS+AS+SS+EN-TuM6, 105 Sershen, M.J.: PS1-TuA11, 117; TF-WeM1, 139 Setina, J.: VT-MoM8, 90 Šetina, J.: VT-MoA1, 99; VT-MoA7, 99; VTTuP3, 130 Setsuhara, Y.: PS1-TuM5, 107 Setvin, M.: ET+SS+GR+SP-ThA9, 168; SP+AS+BI+ET+MI+NS-TuA4, 119 Seyhan, A.: NS+EN-TuM5, 107 Seyller, Th.: GR+EM+ET+NS+TF-MoA8, 94; GR+EM+NS+PS+SS+TF-MoM10, 85 Sgammato, B.: AS-TuP10, 124 Shaat, S.K.: SS+OX-WeM11, 138
Shacham-Diamand, Y.: MN+AS-MoM10, 85; MN-MoA8, 94 Shafai, G.: NS-MoM10, 86 Shafarman, W.N.: EN+TF-TuM3, 104 Shafiq, N.: GR+AS+BI+PS+SS-WeM2, 134 Shaifai, G.: SS+NS-ThA9, 170 Shakouri, A.: SE+NS-MoA8, 97 Shalimov, A.: SE+NS-MoM2, 88 Sham, T.K.: AS+TF+VT-FrM1, 183 Shan, J.: SS-TuP19, 129; SS-TuP38, 129 Shannon, S.: SE+PS-TuA3, 118; SE+PSTuA4, 118 Shao-Horn, Y.: IS+AS+SS+EN-TuM5, 105 Sharad, M.: MI-ThP3, 177 Shard, A.G.: AS-ThA2, 166; AS-ThM4, 155 Sharifi, F.: MI-WeM11, 135 Sharipov, F.: VT-TuM3, 110; VT-TuM4, 110 Sharma, G.: AS-ThA7, 166 Sharma, K.: TC+EM+AS+TF+EN-ThM2, 162 Sharma, M.: OX+EM+MI+NS+TF-MoM10, 87 Sharp, T.: TR-TuA1, 121 Shea, M.J.: EN+TF-TuA3, 114 Shearer, J.C.: SE+NS-MoA6, 97 Sheehan, J.P.: PS2-WeA4, 148 Sheehan, P.E.: GR+AS+BI+PS+SS-WeM5, 134; GR+AS+BI+PS+SS-WeM9, 134; GR+AS+NS+SS-ThM3, 157; GR-ThP9, 176 Shelton, W.A.: MI-ThP4, 177 Shemelya, C.M.: EN+NS-ThA2, 168 Shen, G.: ET+NS+EM-ThM11, 157; NS+ENTuM3, 107; NS-ThM11, 159 Shen, J.: EN+TF-TuM10, 104 Shen, M.: EN+SS-FrM2, 184 Shen, Z.X.: AS+BI-TuA2, 113; AS+BITuA4, 113 Sheng, J.: EN+NS-MoM10, 84 Shenogin, S.V.: SE-TuP3, 128 Shepard, K.L.: GR+EM+ET+NS+TFMoA10, 94 Sherwood, P.M.A.: AS-MoM8, 82 Shetty, R.: SP+AS+BI+ET+MI+TF-WeA9, 149 Shi, Y.: SS-ThA7, 171 Shi, Z.: EM+TF-WeM5, 133; NS-ThP2, 178 Shibata, K.: VT-TuA1, 121 Shigekawa, H.: NS-ThM5, 159 Shih, C.: ET+NS+EM-ThM3, 157 Shikano, T.: GR+AS+EM+NS+SS-WeA12, 145 Shimada, K.: MI-WeM1, 135; NM-TuP1, 127; SS-TuP33, 129; TF-ThP12, 180 Shimbori, S.: PS2-ThM3, 160 Shimizu, H.: BI+SS+NS-WeM11, 132; VTTuP8, 130 Shimizu, T.: NM-TuP3, 127; PS2-ThM3, 160 Shimizu, T.K.: SS-ThM12, 161 Shin, B.G.: GR-ThP6, 176; SS+NS-ThA3, 170 Shin, H.: GR+EM+NS+PS+SS+TF-MoM4, 85; NS-ThP9, 178; PS-MoM8, 88 Shin, H.-J.: GR+EM+NS+PS+SS+TFMoM11, 85 Shin, K.-S.: MN+AS-MoM8, 85 Shin, N.: NS+EN-TuM4, 107; NS-WeA11, 147 Shin, Y.-G.: MN+AS-MoM8, 85 Shin, Y.J.: EM-TuM10, 103 Shiradkar, N.: EN+TF-TuM11, 104 Shirai, M.: VT-TuA1, 121 Shirakura, A.: SE-TuP2, 128 Shiratani, M.: EN+NS-MoM2, 84; PS1TuM5, 107 Shirato, N.: MN-TuP6, 126 Shirayama, Y.: PS2-ThM3, 160 Shirazi, M.: TF-TuM3, 109 Shivashankar, S.A.: AS-TuP23, 124
207
Shkel, Y.: EM-ThP11, 175 Shklovsky, J.: MN+AS-MoM10, 85 Shkovsky, J.: MN-MoA8, 94 Shohet, J.L.: EM-ThP10, 175; EM-ThP11, 175; EM-ThP9, 175; EM-TuA10, 114; PS-ThA10, 170; PS-ThP33, 179; PSThP35, 179 Shojaei, B.: EM+MI-ThA6, 166 Sholl, D.: GR+AS+EM+NS+SS-WeA11, 145 Shong, B.: SS+EM-WeA8, 149 Short, R.D.: PS+BI-MoA7, 96; PS-ThA8, 170 Short, R.T.: VT-MoA8, 99 Shukla, N.: SS-ThM2, 161 Shuptar, M.: VT-TuA3, 121; VT-TuP6, 130 Shutthanandan, V.: AS+NS+SS+TF-WeA4, 143; HI-ThP2, 177; MI-ThP4, 177; NSThP13, 178; OX-TuP6, 127; SS+EN+OXThM11, 161 Shyam, R.: SS+OX-WeM3, 138 Sibener, S.J.: EM+TF-WeM12, 133 Sie, C.Y.: PS-ThP46, 179 Siebentritt, S.: EN+TF-TuM5, 104 Siekhaus, W.J.: AC+EN-TuM10, 102; AC+EN-TuM6, 102 Sijbrandij, S.: HI+AS+NS-WeA10, 146 Sikorski, E.M.: PS1-ThM12, 160; PS-MoM2, 88; PS-WeM10, 137 Silbaugh, T.L.: SS-WeM6, 138 Siligardi, G.: BI+SS+AS-TuM12, 103 Sillassen, M.: BI-MoM11, 83 Silva, A.: EM+NS-FrM4, 183 Silva, A.R.: TF-ThP11, 180 Silva, S.: BI-TuP6, 125 Silver, R.: NS+SP-MoA8, 95 Silverstein, R.: EN+TF-MoA10, 93 Simanullang, M.: NS+EN-TuM5, 107 Simchenko, S.V.: SS+EN+OX-ThM12, 161 Simmons, J.: NM+AS+MS-MoM5, 86 Simmons, M.Y.: NS-MoM3, 86 Simon, C.: BI-MoA6, 92 Simons, D.S.: AS+BI-TuA9, 113 Simons, M.T.: TF+AS+SS-ThA8, 171 Singh, A.: TF+MI-WeA3, 151 Singh, U.: MN-TuP6, 126 Sinha, H.: EM-ThP9, 175 Sinno, T.: EM-ThM12, 156 Sinnott, S.B.: EN+SS-FrM6, 184; OX+SS+TF+MI-MoA1, 96; OX-TuP1, 127; OX-TuP3, 127; OX-TuP4, 127; PSThP11, 178; SS+NS-ThA4, 170; TR+BITuM10, 110; TR-TuA3, 121; TR-TuP1, 130 Sinsabaugh, S.L.: EN+NS-ThM12, 156 Sirringhaus, H.: TC+EM+AS+TF+EN-ThM9, 162 Sit, J.C.: MN-MoA7, 94 Sitar, Z.: EM+TF+AS-ThA1, 167 Sivaram, S.: NS-WeA11, 147 Siviero, F.: VT-TuM12, 110 Sivula, K.: IS+AS+SS+EN-TuM3, 105 Siwak, N.: MN-MoA10, 94 Skomski, D.: SS+NS-ThA11, 170 Skuza, J.R.: VT+AS+SS-WeM6, 140 Slattery, A.D.: SS+NS-ThA7, 170 Sleiman, H.: NS+EN+GR-TuA3, 117 Smart, L.: VT-MoM11, 90 Smekal, W.: AS-MoM3, 82; AS-MoM6, 82 Smentkowski, V.S.: AS-TuP18, 124 Smets, A.H.M.: EN+PS-WeM10, 133 Smirnov, N.B.: EM-TuM9, 103 Smith, S.: AS-ThM4, 155 Smith, S.R.: SS-ThA3, 171 Smolenski, K.W.: VT+AS+SS-WeM2, 140; VT-TuA11, 121 Smoot, M.R.: AC+EN-TuM5, 102 Snow, A.W.: TF+AS-TuA3, 120 Snyders, R.: PS1-TuA8, 117; SE+NS-MoA4, 97 Sobolewski, M.A.: PS1-TuM1, 107
Author Index
Soda, E.: PS-ThP1, 178; PS-WeM4, 137 Sodeman, I.: EM+OX-WeA1, 144 Söderlind, P.A.: AC+MI+SS+TF-MoM1, 82 Soffa, W.A.: TF+MI-WeA4, 151 Sohn, Y.H.: EN+TF-TuM10, 104 Sojoudi, H.: GR+EM+ET+MS+NS-FrM9, 185; GR-ThP10, 176 Sokolov, I.: MN+AS-MoM10, 85 Solanki, N.: EW-WeL3, 142 Solzbacher, F.: TF-WeM2, 139 Song, E.B.: EM+SS+AS+NS-ThM11, 155 Song, I.: GR+EM+NS+PS+SS+TF-MoM4, 85; NS+EN-TuM1, 107 Song, I.Y.: AS+BI-TuM9, 102 Song, S.-H.: AS-WeM3, 132 Song, Y.-B.: SS-TuP9, 129 Sonntag, M.D.: NS-ThP3, 178 Sorescu, D.C.: SS-ThA8, 171 Sorini, A.: EN+SS-FrM5, 184 Sosolik, C.E.: SS+OX-WeM3, 138; SSTuP36, 129 Sotres, J.: BI+SS+AS-TuM3, 103 Sottos, N.R.: SE+NS-MoA10, 97 Soudi, A.: ET+NS+EM-ThM12, 157 Sousa, C.: AS-TuP11, 124; BI+AS-TuA7, 113 Sowa, M.J.: PS1-TuA11, 117 Sozias, S.: PS+EM-MoM3, 87 Spampinato, V.: NS+EN+GR-TuA2, 117 Spanier, J.E.: NS+EN-TuM6, 107 Spatz, J.P.: BI-MoM3, 83 Speck, J.: EM-ThM9, 156 Spemann, D.: GR+AS+EM+MI+MN-TuM9, 105 Spencer, N.D.: NS+SP-MoA2, 95 Spencer, S.: AS-ThM4, 155 Spies, M.: EL+TF+BI+AS+EM+SS-MoA9, 92 Spooner, T.: PS2-TuM9, 108 Sreenivasan, R.: PS2-TuM6, 108 Sridhar, S.: PS-MoM8, 88 Srikanth, H.: MI+OX-WeA9, 147; MI-ThP2, 177; NS-MoM8, 86; NS-MoM9, 86; OX+EM+MI+NS+TF-MoM1, 87 Srinadhu, E.S.: SS+OX-WeM3, 138 Srinivasan, S.: PS2-TuM11, 108 Sriraman, K.: SP-TuP1, 128 Sriraman, S.: PS-MoM11, 88 Srivastava, A.K.: PS2-TuA3, 118 Srivastava, N.: GR+AS+NS+SP+SS-TuA10, 115 Srivastava, R.: PS-ThP1, 178; PS-WeM1, 137; PS-WeM4, 137 Stach, E.: TF+EN-MoA1, 98 Stadermann, M.: IS+AS+OX+ET-WeM6, 135 Stafford, L.: PS+BI-MoA10, 96; PS+BIMoA11, 96; PS+TC-WeM1, 136; PS+TCWeM6, 136; PS1-WeA9, 148 Stair, P.C.: OX+SS+TF+MI-MoA3, 96; TF+EN-MoA1, 98 Standaert, T.: PS2-TuM6, 108 Starostin, S.A.: PS+TC-WeM2, 136 Startsev, E.A.: PS2-MoA10, 97; PS2-MoA9, 97 Stchakovsky, M.: TC-ThP2, 180 Steele, B.: GR+AS+EM+MI+MN-TuM10, 105 Steele, D.A.: PS+BI-MoA7, 96; PS-ThA8, 170 Stefani, G.: AC+TF+SS+MI-MoA3, 91 Stein, K.: PS2-TuM6, 108 Stein, M.J.: IS+AS+BI+ET+GR+NS-TuA1, 116 Steiner, M.: MI+SP+AS-ThM12, 159 Steiner, M.A.: TF+MI-WeA4, 151 Steiner, M.B.: NS+EN-TuM9, 107 Stenger, B.: NS-ThM6, 159 Stephan, E.: AS+NS+SS+TF-WeA10, 143 Stern, L.A.: HI-ThP3, 177
Author Index
Stevanovic, A.: SS+EN+OX-ThM6, 161 Stevie, F.A.: AS+BI-TuA10, 113 Stickle, W.F.: AS-ThA1, 166 Stillahn, J.: PS-ThP1, 178; PS-WeM4, 137 Stine, R.: GR+AS+BI+PS+SS-WeM5, 134; GR+AS+BI+PS+SS-WeM9, 134; GR+AS+NS+SS-ThM3, 157 Stock, S.R.: AS-WeM9, 132 Stoddart, P.R.: MB+BI-ThA4, 169 Stojak, K.: NS-MoM9, 86 Stolbov, S.: EN+NS-ThM3, 156; EN+SSFrM7, 184 Stolwijk, S.D.: MI-WeM1, 135 Stone, D.: SE+NS-MoA1, 97 Stone, J.A.: VT-MoM6, 90 Stoneking, M.R.: PS-ThP21, 179 Storch, I.R.: MN-TuM10, 106; MN-TuM11, 106 Storm, A.J.: VT-TuA7, 121 Stout, P.: PS2-MoA4, 97 Strietzel, C.: VT-MoM2, 90 Strohmeier, B.: AS+BI-TuM11, 102 Strom, M.J.: MB+BI-ThA7, 169 Stroscio, J.A.: GR+EM+ET+NS+TF-MoA10, 94; MI-WeM11, 135; MI-WeM2, 135 Strouse, G.F.: VT-MoM6, 90 Stuart, S.C.: GR+EM+ET+MS+NS-FrM8, 185 Stubbers, R.: EN-ThP11, 175 Stuppy, S.M.: MB+BI-ThA3, 169 Stutzman, M.L.: VT-MoM5, 90; VT-TuP16, 130 Styan, K.: BI-MoM5, 83 Styrov, V.: SS+EN+OX-ThM12, 161 Su, C.: SP+AS+BI+ET+MI+TF-WeA8, 149 Su, D.: EN+SS-FrM4, 184 Su, H.: TF+EM+SE+NS-ThM4, 162; TF+SE+NS-WeM10, 139 Su, L.: EM-ThP6, 175 Suanpoot, P.: PS+BI-MoA3, 96; PS-ThP38, 179 Subramaniam, S.: AS+BI-TuA7, 113 Subramanian, V.: AS+NS+SS+TF-WeA4, 143 Such, G.K.: BI-MoM1, 83 Sudipta, S.: BI-TuP3, 125 Suemitsu, M.: GR+EM+NS+PS+SS+TFMoM10, 85 Suetsugu, Y.: VT-TuA1, 121 Sugai, H.: PS1-WeA3, 148 Sugimoto, Y.: SP+AS+BI+ET+MI+NSTuA11, 119 Sugiyama, M.: EN+TF-TuA12, 114; MNTuP4, 126 Sukenik, C.N.: OX+EM+MI+NS+TFMoM11, 87 Sumant, A.V.: AS-TuP12, 124; MN+ASMoM3, 85; MN+AS-MoM5, 85 Sumiya, K.: TR-TuP3, 130 Sumpter, B.G.: NS+AS+SS+SP-WeM11, 136; SS-WeM4, 138 Sun, D.Z.: GR-ThP8, 176; SP+AS+BI+ET+MI+NM+NS+SS+TFWeM5, 137; SS-WeA1, 150 Sun, G.F.: SS-WeM12, 138 Sun, H.D.: AS+BI-TuA2, 113; AS+BI-TuA4, 113 Sun, L.: SE+PS-TuM9, 108; TF+AS+SSThA10, 171 Sun, T.: EM-TuA7, 114 Sun, X.: TR-TuP1, 130 Sun, Y.: TF-TuM9, 109 Sun, Z.: EM-TuA8, 114; PS-ThP10, 178 Sundaram, G.: PS1-TuA11, 117; TF+EM+SS-ThA7, 172; TF-WeM1, 139 Sundararajan, R.: PS1-TuM11, 107; PS1WeA12, 148; PS2-MoA10, 97; PS2MoA11, 97; PS2-MoA9, 97 Sung, C.Y.: GR+AS+NS+SP+SS-TuA11, 115
208
Sung, H.K.: PS-ThP23, 179 Sung, Y.M.: PS-ThA10, 170; PS-ThA7, 170; PS-ThP33, 179; PS-ThP35, 179 Suntharampillai, T.: BI-TuP9, 125 Suo, Z.: NS-ThM12, 159 Surla, V.: PS-ThA11, 170 Surman, D.: EW-TuL4, 111 Surnev, S.: SS+OX-WeM12, 138 Sutarto, R.: TF+AS-TuA10, 120 Suthar, K.J.: NS+SP-MoA11, 95 Suto, S.: SS-MoA10, 98 Sutter, E.: GR+EM+NS+SS+TF-ThA2, 169 Sutter, P.W.: GR+AS+EM+NS+SS-WeA8, 145; GR+EM+NS+SS+TF-ThA2, 169; IS+AS+BI+ET+GR+NS-TuA10, 116 Suzer, S.: AS-MoM11, 82; EN-ThP3, 175 Suzuki, H.: MN-TuP5, 126 Suzuki, T.: GR+AS+EM+NS+SS-WeA12, 145; PS1-TuM5, 107; PS2-WeA3, 148; PS-MoM2, 88; PS-WeM10, 137; SETuP2, 128 Suzuki, Y.: SS-TuP11, 129 Švec, M.: ET+SS+GR+SP-FrM5, 184 Svedberg, E.B.: EN+NS-ThA7, 168 Sverdlov, Y.: MN-MoA8, 94 Swain, G.W.: MB+BI-ThA3, 169 Swaraj, S.: AS+BI-TuM5, 102 Swart, H.C.: SS+OX-WeM11, 138 Sweeny, B.: EN+SS-FrM4, 184 Sweet, W.J.: TF2-TuA7, 120 Swinney, T.C.: VT-MoA11, 99 Sydorenko, D.: PS2-MoA10, 97; PS2-MoA9, 97 Sykes, C.H.: EM+SS+AS+NS-ThM9, 155; SS-MoA7, 98; SS-ThM3, 161; SS-TuP1, 129; SS-WeA2, 150; SS-WeM1, 138 Synowicki, R.A.: EL+TF+AS+EM+SS+PS+EN+NMMoM5, 83 Szakal, C.: AS+BI-TuA9, 113 Szili, E.J.: PS+BI-MoA7, 96 Szulczewski, G.J.: MI+OX-WeA2, 147
— T —
Ta, C.N.: BI-TuP15, 125 Tagami, M.: PS2-TuM9, 108 Taing, J.: EN+SS-FrM5, 184; SS+NS-TuA3, 119 Tait, S.L.: SS+NS-ThA11, 170; SS-MoA3, 98; SS-WeM3, 138 Tajima, S.: PS-ThP25, 179 Takaba, G.: PS-ThP8, 178 Takagi, K.: GR+AS+NS+SS-ThM1, 157 Takahashi, K.: MN-TuP9, 126 Takahashi, M.: PS-ThP34, 179 Takahashi, N.: VT-MoA3, 99 Takahashi, R.: VT-TuA10, 121 Takahashi, S.: PS2-ThM3, 160 Takai, O.: GR-ThP7, 176; NS-ThP4, 178 Takaishi, R.: AS-ThM12, 155; AS-TuP3, 124; AS-TuP6, 124 Takano, I.: SS-TuP11, 129; SS-TuP32, 129; SS-TuP6, 129; SS-TuP7, 129 Takao, Y.: PS2-TuA10, 118; PS2-TuA12, 118; PS-ThP20, 179 Takarai, Y.: NM-TuP2, 127 Takats, Z.: IS+AS+BI+ET+GR+NS-TuA3, 116 Takeda, K.: PS1-TuM5, 107; PS2-MoA7, 97; PS2-ThM5, 160; PS-ThP14, 178 Takemura, S.: NM-TuP1, 127; NM-TuP2, 127; NM-TuP3, 127; TF-ThP12, 180 Takeuchi, T.: PS2-WeA3, 148 Talin, A.A.: MI-WeM11, 135 Tallarida, M.: IS+AS+OX+ET-WeM9, 135 Talledo, A.F.: TC-ThP3, 180; TR-TuP4, 130 Tamanaha, C.R.: GR+AS+BI+PS+SS-WeM5, 134; GR+AS+NS+SS-ThM3, 157 Tamaya, S.: PS-ThP6, 178 Tamura, H.: PS-ThA1, 170
Tamura, Y.: PS2-ThM10, 160 Tan, H.: AS+BI-TuA2, 113 Tan, K.: IS-TuP2, 126 Tan, X.: EL+TF+AS+EM+SS+PS+EN+NMMoM4, 83 Tanaka, S.: GR+AS+NS+SS-ThM1, 157 Tang, J.-M.: SS-TuP4, 129 Tang, X.: MI+OX-WeA7, 147 Tanski, J.A.: VT-MoA6, 99 Tantardini, G.F.: GR+AS+EM+NS+SSWeA12, 145 Tao, F.: TF+AS+SS-ThA6, 171 Tao, J.: SS-TuP15, 129 Tapasztó, L.: AS+TF+VT-FrM3, 183 Taschuk, M.T.: TF+SE+NS-WeM11, 139; TF+SE+NS-WeM5, 139; TF+SE+NSWeM9, 139 Tasneem, G.: AS-MoM6, 82 Tatsumi, T.: PS2-ThM4, 160; PS2-TuA9, 118; PS-ThP14, 178; PS-ThP20, 179 Tatulian, S.A.: GR+AS+BI+PS+SS-WeM6, 134 Taubert, I.: BI-TuP14, 125 Taubner, T.: AS-WeM4, 132 Taucer, M.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM2, 137 Tawalbeh, T.: EM+NS-FrM9, 183 Te Sligte, E.: PS-ThP15, 178 Telib, H.: VT-TuM9, 110 Temmen, M.G.: MN-TuM6, 106 Temple, D.S.: EN+NS-MoM11, 84 Temst, K.: MI+SP+AS-ThM9, 159 ten Elshof, A.: EL+TF+BI+AS+EM+SSMoA8, 92 Tendler, S.J.B.: SP+AS+BI+ET+MI+NSTuA9, 119 Teng, D.: GR+AS+EM+NS+SS-WeA11, 145 Tenne, R.: NS+AS+SS+SP-WeM4, 136 Tennyson, E.: EM-ThP15, 175 Tennyson, J.: PS2-MoA6, 97 Tentschert, J.: AS-TuP1, 124 Teplyakov, A.V.: AS-TuP20, 124; EN+ASThA8, 167; SS+EM-WeA12, 149; SSTuP20, 129 ter Veen, H.R.J.: TF+AS+SS-ThA4, 171; TFThP14, 180 Terauds, K.: TF+EN-MoA3, 98 Terawaki, L.: SS-TuP31, 129 Terfort, A.: SS+NS-ThA10, 170; TF+AS+SSThA2, 171 Terrones, H.: SS-WeM4, 138 Terrones, M.: GR+AS+EM+NS+SS-WeA3, 145 Terryn, H.: SE+PS-TuA9, 118 Terui, S.: VT-TuA1, 121 Teslich, N.E.: AC+EN-TuM6, 102 Thakur, M.: EN+NS-ThM12, 156 Theilacker, W.: AS+BI-TuM4, 102 Therien, M.: NS-WeA1, 147 Thevuthasan, S.: AS+BI-TuA12, 113; AS+NS+SS+TF-WeA3, 143; AS+NS+SS+TF-WeA4, 143; AS-TuP17, 124; EN-ThP10, 175; HI-ThP2, 177; IS+AS+BI+ET+GR+NS-TuA12, 116; NS-ThP13, 178; NS-WeA10, 147; OXTuP6, 127; SS-TuP26, 129; TC+EM+AS+TF+EN-ThM5, 162; TF+AS+SS-ThA11, 171 Thierley, M.: VT+AS+SS-WeM3, 140 Thiess, S.: AS+TF+VT-FrM3, 183 Thissen, A.: EW-TuL6, 111 Thissen, H.: BI-MoM5, 83; BI-MoM6, 83 Thissen, P.: EN+AS-ThA7, 167; SS+EMWeA11, 149; SS-TuP21, 129; TF+AS+SS-ThA3, 171 Thomas, E.: SE+NS-MoA11, 97 Thomas, J.C.: SS+EM-WeA2, 149; SSTuP34, 129
Thomas, M.: AS+NS+SS+TF-WeA10, 143 Thomas, M.A.: PS1-TuA12, 117 Thomas, S.: EN+TF-WeA8, 144 Thomas, W.: BI+SS+AS-TuM6, 103 THompson, W.: HI-ThP3, 177 Thoms, B.: EM-ThP5, 175 Thone, M.: TF2-TuA11, 120 Thonhauser, T.: EN+AS-ThA7, 167; ISTuP2, 126 Thornton, M.: PS-ThA6, 170 Thorpe, R.: EN+AS-ThA9, 167 Thrun, X.: PS2-TuM12, 108 Tian, F.Y.: SS-TuP20, 129 Tian, J.D.: MN-TuP2, 126 Tian, P.: PS2-TuA11, 118 Tian, W.-C.: MN+AS-MoM11, 85; MNMoA9, 94 Tillocher, T.: MN+AS-MoM6, 85; PS+EMMoM3, 87; PS1-ThM2, 160; PS1-ThM3, 160 Timm, R.: EM+MI-ThA6, 166; ET+NS+EMThM6, 157 Titus, M.: PS-MoM1, 88 Tivanski, A.: IS+AS+BI+ET+GR+NS-TuA9, 116 Tiwald, T.E.: EL+TF+BI+AS+EM+SSMoA1, 92 Tiwari, A.N.: TF+AS-WeA3, 151 Tkach, I.: AC+TF+SS+MI-MoA6, 91 Tkadletz, M.: SE+NS-MoM6, 88 To, B.N.: PS1-ThM12, 160 Tobin, J.G.: AC+MI+SS+TF-MoM9, 82 Tochigi, H.: VT-MoM1, 90 Todor, O.: PS2-TuM10, 108; PS-ThA11, 170 Todorovic, M.: SP+AS+BI+ET+MI+NSTuA10, 119 Toeller, M.: TF-ThP1, 180 Toivola, M.: EN+TF-WeA10, 144 Tokei, Z.: EM-TuA3, 114 Tokluoglu, E.: PS2-MoA10, 97; PS2-MoA9, 97 Tokranov, V.: EM+TF+OX+GR-MoM3, 84 Tokumoto, H.: PS2-ThM3, 160 Tolbert, L.: GR+EM+ET+MS+NS-FrM9, 185; GR-ThP10, 176 Tolmer, P.: NS-ThM11, 159 Toman, B.: VT-MoA1, 99 Tomaszewski, D.: PS2-WeA3, 148 Tompkins, H.G.: EL+TF+AS+EM+SS+PS+EN+NMMoM8, 83 Toney, M.F.: EM-TuA2, 114; EM-TuA7, 114 Tongay, S.: GR+EM+ET+MS+NS-FrM11, 185; LB+EM+GR+MN+TR-WeA7, 146 Torija, M.: OX+EM+MI+NS+TF-MoM10, 87 Torun, B.: SS-ThA9, 171; TF+AS+SS-ThA1, 171 Tosa, M.: MN-TuP5, 126 Tosun, B.S.: EN+TF-TuM9, 104 Tóth, J.: AS+TF+VT-FrM3, 183 Tougaard, S.: AS-MoM1, 82 Toyoda, A.: SS-TuP6, 129 Tracy, J.B.: TF2-TuA1, 120 Travis, J.: TF+EN-MoA3, 98 Trenary, M.: SS-WeM5, 138 Trevino, K.: PS-ThP1, 178 Trickett, Y.: PS-ThP34, 179 Trioni, M.I.: AC+TF+SS+MI-MoA3, 91; GR+AS+EM+NS+SS-WeA12, 145 Tripp, R.A.: TF+SE+NS-WeM12, 139 Trogler, W.C.: BN+AS-WeA3, 143 Tromp, R.M.: GR+EM+NS+PS+SS+TFMoM8, 85 Tronic, E.: BI+SS+AS-TuM6, 103 Tsai, H.: PS1-ThM12, 160 Tsai, J.H.: PS+EM-MoM4, 87 Tsang, K.: BI-MoM5, 83 Tsargorodska, A.B.: NS+SP-MoA1, 95 Tsong, T.T.: HI+AS+NS-WeA8, 146
209
Tsuchikawa, R.: NS+EN-TuM11, 107 Tsuda, H.: PS2-TuA10, 118; PS2-TuA12, 118 Tsushima, T.: SE+PS-TuA8, 118 Tsverin, Y.: NS+AS+SS+SP-WeM4, 136 Tucker, R.T.: TF+SE+NS-WeM11, 139; TF+SE+NS-WeM9, 139 Tully, J.C.: SS-MoM8, 89 Turchanin, A.: GR+AS+BI+PS+SS-WeM11, 134; HI+AS+BI+NS-ThM11, 158; HI+AS+BI+NS-ThM5, 158 Turk, M.E.: GR+AS+EM+MI+MN-TuM2, 105 Turkowski, V.: MI+EN+BI-TuA8, 116; NSWeA9, 147 Turner, M.: PS1-TuM10, 107; PS1-TuM9, 107 Tuscano, J.A.: TF+EM+SS-ThA8, 172 Tweedy, J.: EM+TF+AS-ThA1, 167 Twigg, M.E.: EM+TF+AS-ThA6, 167 Tyagi, P.: GR+AS+NS+SP+SS-TuA11, 115; GR+EM+NS+PS+SS+TF-MoM2, 85 Tyler, K.: SS-ThM11, 161 Tyliszczak, T.: GR+AS+EM+MI+MN-TuM9, 105; IS+AS+BI+ET+GR+NS-TuA9, 116 Tysoe, W.T.: TR+SE-WeM3, 140 Tzeng, Y.R.: LB+EM+GR+MN+TR-WeA8, 146
— U —
Uchida, G.: EN+NS-MoM2, 84 Ueba, T.: SS-TuP31, 129 Ueda, O.: EN-ThP12, 175 Ueki, S.: MN-TuP4, 126 Ueno, I.: SS-ThA10, 171 Ueno, T.: GR-ThP7, 176 Ünverdi, Ö.: SP+AS+BI+ET+MI+NSTuA10, 119 Uesawa, F.: PS-ThP14, 178 Ugelow, M.: AS+BI-TuA9, 113 Uhm, H.: PS+BI-MoA3, 96 Ulfig, R.M.: AS-TuP18, 124 Ulijn, R.: BI+SS+AS-TuM9, 103 Ulrich, M.D.: GR+EM+ET+MS+NS-FrM8, 185 Unger, M.: AS-WeM6, 132 Unger, W.E.S.: AS+BI-TuM5, 102 Ungureneau, M.: GR+AS+EM+MI+MNTuM9, 105 Upadhyay, R.: PS2-MoA11, 97 Upadhyaya, G.: PS-MoM1, 88; PS-MoM9, 88 Urata, C.: SS-ThM1, 161 Urban, F.K.: EL+TF+AS+EM+SS+PS+EN+NMMoM10, 83 Urban, R.: HI+AS+NS-WeA7, 146 Usachov, D.: GR-ThP3, 176 Usami, K.: NS+EN-TuM5, 107 Ushigome, D.: GR+AS+EM+NS+SSWeA12, 145 Utech, T.: TR-TuP7, 130 Utz, A.L.: SS-MoA4, 98 Uvdal, P.: SS-MoA11, 98
— V —
Vahedi, V.: PS-MoM11, 88 Vail, M.A.: TF2-TuA2, 120 Valefi, M.: TR+BI-TuM5, 110 Valla, T.: MI-WeM9, 135 Vallee, C.: OX-TuP2, 127; TF+MI-WeA7, 151 Vallée, C.: NM+NS+MS+EM-MoA6, 95 Vallier, L.: PS2-TuM2, 108 Valtiner, M.: BI+SS+NS-WeM5, 132 Van Assche, G.: SE+PS-TuA9, 118 van Buuren, T.: AS+TF+VT-FrM2, 183; IS+AS+OX+ET-WeM6, 135 van de Loo, B.W.H.: EL+TF+AS+EM+SS+PS+EN+NMMoM6, 83; TF-TuM5, 109
Author Index
van de Sanden, M.C.M.: EN+PS-WeM3, 133; EN+PS-WeM4, 133; PS+TC-WeM2, 136; PS2-WeA1, 148; PS2-WeA9, 148 van der Donck, J.C.J.: VT-TuA7, 121 Van der Mei, H.C.: MB+BI-ThM11, 158 van der Mullen, J.J.A.M.: PS1-WeA7, 148 van der Veen, J.: NS+SP-MoA9, 95 Van der Ven, A.: SS+EM-WeA2, 149; SSTuP34, 129 van der Wiel, W.G.: NS+SP-MoA9, 95 van der Zwaag, S.: TR+BI-TuM5, 110 Van Duyne, R.P.: NS-ThP3, 178; NS-WeA3, 147 Van Elshocht, S.: IS+AS+OX+ET-WeM9, 135; LB+EM+GR+MN+TR-WeA12, 146; TF-ThP1, 180 van Hest, F.A.M.: TC+EM+AS-WeA10, 150 Van Mele, B.: SE+PS-TuA9, 118 Van Spyk, M.H.C.: SS-ThA1, 171; SSWeM11, 138 Van Veldhoven, E.: HI+AS+NS-WeA9, 146 van Zijll, M.: NS-ThM6, 159 Vandencasteele, N.: PS+TC-WeM12, 136; PS-ThP2, 178; PS-ThP31, 179; SE+NSMoA4, 97 Vanderleyden, E.: MN+AS-MoM10, 85 VanDerslice, J.: EL+TF+BI+AS+EM+SSMoA1, 92 Vandervelde, T.E.: EN+NS-ThA2, 168 Vandervorst, W.: AS-ThM6, 155 VanFleet, R.: LB+EM+GR+MN+TR-WeA3, 146; MN+AS-MoM4, 85 Vanhart, D.: EN+TF-WeA12, 144 Vanhove, N.: HI+AS+NS-WeA10, 146 Vaniapura, V.: PS2-TuM10, 108 VanSant, K.: TF+AS-WeA10, 151 Varela, M.: OX+EM+MI+NS+TF-MoM10, 87 Varga, T.: HI-ThP2, 177; MI-ThP4, 177; NSThP13, 178; OX-TuP6, 127 Varoutis, S.: VT-TuM4, 110 Vasekar, P.S.: EN+TF-WeA12, 144 Vasiliev, I.V.: EM+NS-FrM9, 183 Vasudevan, S.: GR+AS+NS+SS-ThM4, 157 Vega, A.: TF+AS+SS-ThA3, 171 Velden, M.: TC+EM+AS+TF+EN-ThM2, 162 Vélez, C.: BI-TuP6, 125 Vemuri, R.S.: HI-ThP2, 177; NS-ThP13, 178; TF+AS+SS-ThA11, 171 Venkatachalam, D.K.: LB+EM+GR+MN+TR-WeA7, 146 Ventrice, Jr., C.A.: GR+AS+NS+SP+SSTuA11, 115; GR+EM+NS+PS+SS+TFMoM2, 85 Ventzek, P.: PS2-MoA10, 97; PS2-MoA11, 97; PS2-MoA9, 97 Verberk, R.: VT-TuA7, 121; VT-TuA9, 121 Verbitsky, N.: GR-ThP3, 176 Verdini, A.: SS+OX-WeM6, 138 Verheijen, M.A.: TF+EN-MoA4, 98; TFTuM10, 109; TF-TuM11, 109 Verkhoturov, S.: AS-ThM5, 155 Versloot, T.J.: PS-ThA9, 170; PS-ThP15, 178 Versluis, R.: VT-TuA7, 121; VT-TuA9, 121 Vescovo, E.: MI+OX-WeA10, 147; MI+OXWeA11, 147 Veyan, J.-F.: GR+AS+BI+PS+SS-WeM2, 134; NS+SP-MoA7, 95; SS-WeA12, 150 Viale, L.: VT-TuM12, 110 Vicar, M.: VT-MoA1, 99 Vickerman, J.C.: AS-ThM2, 155 Victora, R.H.: TF+MI-WeA1, 151 Vieker, H.: HI+AS+BI+NS-ThM5, 158; HIThP1, 177 Vilayurganapathy, S.: NS-WeA10, 147; TC+EM+AS+TF+EN-ThM5, 162 Vilmercati, P.: AC+TF+SS+MI-MoA3, 91 Vincent, M.: EN+TF-WeA4, 144
Author Index
Vincent-Johnson, A.J.: TF+EN-MoA7, 98 Virwani, K.: EM-TuA8, 114 Vizioz, C.: PS-ThP26, 179 Vlassiouk, I.: AS-TuP12, 124; ET+SS+GR+SP-ThA6, 168 Voelcker, N.H.: PS+BI-MoA7, 96 Voevodin, A.A.: SE+NS-MoA1, 97; SETuP3, 128; TR+SE-WeM1, 140 Vogel, E.M.: EM+TF-WeM4, 133; EMTuM3, 103 Vogli, E.: PS2-TuA1, 118 Vogt, P.: GR+EM+NS+SS+TF-ThA6, 169 Vohs, J.M.: SP+AS+BI+ET+MI+TF-WeA3, 149 von Bergmann, K.: NS-ThM1, 159 Vora, P.M.: GR+AS+EM+MI+MN-TuM2, 105 Voronin, S.: PS2-TuM1, 108 Voroshazi, E.: AS-ThM6, 155 Vo-Van, C.: GR+AS+EM+NS+SS-WeA10, 145 Voznyuk, V.: MI+OX-WeA7, 147 Vratzov, B.: NS+SP-MoA9, 95 Vukovic, M.: VT-TuP4, 130 Vurgaftman, I.: EM+TF+AS-ThA6, 167 Vyalikh, D.: GR-ThP3, 176
— W —
Wada, A.: PS1-TuA9, 117; PS-MoM6, 88 Wade, S.A.: MB+BI-ThA4, 169 Wadikar, M.: SE+PS-TuA9, 118 Waerenbogh, J.-C.: AC+TF+SS+MI-MoA6, 91 Wagner, M.: SS+OX-WeM12, 138 Wagner, M.S.: AS-WeM3, 132 Walker, A.V.: EM+TF-WeM5, 133 Walker, G.: SS+OX-WeM4, 138; SS-TuP5, 129 Walker, R.: AS-TuP9, 124 Wall, M.H.: GR-ThP1, 176 Wallace, D.C.: EM+NS-FrM11, 183 Wallace, R.M.: EM+TF+OX+GR-MoM1, 84; EM+TF+OX+GR-MoM5, 84; EM-TuM3, 103; GR+AS+EM+NS+SS-WeA1, 145; GR+EM+ET+MS+NS-FrM7, 185 Wallig, J.: SE+PS-TuM10, 108 Wallin, C.B.: MN-TuM10, 106 Wallin, P.: BI-MoA3, 92 Walrath, J.C.: EM+SS+AS+NS-ThM13, 155 Walsh, L.A.: AS-TuP7, 124; EM-TuM5, 103 Walter, A.: GR+EM+ET+NS+TF-MoA8, 94 Walters, D.: SP+AS+BI+ET+MI+TFWeA11, 149 Walton, J.: AS+BI-TuM12, 102 Walton, S.G.: GR+AS+BI+PS+SS-WeM9, 134; GR+EM+NS+PS+SS+TF-MoM1, 85; GR-ThP9, 176; PS1-TuM12, 107; PSThP40, 179 Wan, K.: BN+AS-WeA10, 143 Wang, B.: IS+AS+BI+ET+GR+NS-TuA9, 116 Wang, C.: SS-WeM2, 138 Wang, C.A.: PS-ThP1, 178 Wang, C.M.: HI-ThP2, 177; NS-ThP13, 178 Wang, D.D.: AS+BI-TuA4, 113 Wang, E.G.: EM-ThM11, 156 Wang, G.-C.: TF+SE+NS-WeM4, 139 Wang, H.: EN+NS-ThM10, 156; PS2-TuM6, 108; SS-TuP26, 129 Wang, J.: EN+TF-WeA8, 144; HI+AS+BI+NS-ThM9, 158; MI+OXWeA10, 147; MN-MoA4, 94; NS-MoM9, 86; SS-TuP4, 129; TF-MoM8, 89 Wang, J.-P.: MI+OX-WeA3, 147 Wang, K.L.: EM+SS+AS+NS-ThM11, 155 Wang, L.: AC+TF+SS+MI-MoA1, 91; GR+EM+ET+NS+TF-MoA10, 94; PSThP1, 178; PS-WeM4, 137; TF+AS+SSThA8, 171; VT-MoA6, 99 Wang, L.B.: MN+AS-MoM11, 85
210
Wang, M.-C.: PS-ThP45, 179 Wang, P.: NS-WeA2, 147 Wang, Q.H.: GR+AS+BI+PS+SS-WeM1, 134 Wang, R.: EN+TF-TuA8, 114 Wang, S.: MN-TuM11, 106 Wang, W.: ET+SS+GR+SP-ThA10, 168; SSTuP26, 129 Wang, X.: BI-TuP6, 125; LB+EM+GR+MN+TR-WeA7, 146 Wang, Y.: EN+NS-MoM2, 84; EN+TFTuA12, 114; GR-ThP3, 176; OX+SS+TF+MI-MoA10, 96; PS-ThP10, 178 Wang, Z.: AS-MoA3, 91; IS+AS+OX+ETWeM5, 135 Wang, Z.-T.: SS+EN+OX-ThM5, 161; SS+EN+OX-ThM9, 161; SS-TuM5, 109 Wanifuchi, T.: PS-ThP8, 178 Warren, A.P.: EM-TuA2, 114; EM-TuA7, 114 Wasio, N.A.: AS-TuP26, 124; ET+SS+GR+SP-ThA3, 168 Watanabe, N.: PS2-ThM9, 160 Watanabe, Y.: NM-TuP1, 127; NM-TuP2, 127 Waters, J.: NS+EN-TuM3, 107 Waterton, C.: IS+AS+BI+ET+GR+NS-TuA1, 116 Watkins, J.: NM+NS+MS+EM-MoA10, 95 Watts, J.F.: AS-TuP4, 124 Watts, S.: MI+OX-WeA7, 147 Weaver, J.F.: SS+EN+OX-ThM10, 161; SSTuP22, 129; SS-TuP23, 129 Webb, L.: BI-TuP18, 125 Weber, J.W.: EL+TF+AS+EM+SS+PS+EN+NMMoM6, 83 Weber, M.J.: TF+EN-MoA4, 98 Weber, N.-E.: HI+AS+BI+NS-ThM5, 158 Weber, P.K.: AC+EN-TuM6, 102 Weeks, S.L.: EN+PS-WeM4, 133; NSMoM6, 86 Wege, S.: PS2-TuM12, 108 Wehbe, N.: AS-MoA2, 91 Wei, D.: EM+TF+OX+GR-MoM9, 84 Wei, M.: TF+AS-WeA7, 151; TF+AS-WeA9, 151 Wei, S.-H.: EN+AS-ThA1, 167; TC+EM+AS-WeA4, 150 Wei, W.D.: EN+SS-FrM4, 184 Weidner, T.: AS-WeM3, 132 Weiland, C.: AS-ThA6, 166 Weinberg, R.Y.: VT-MoA6, 99 Weinert, M.: GR+AS+NS+SP+SS-TuA2, 115; SS-TuP3, 129 Weisheit, M.: EM-TuA11, 114 Weitering, H.: ET+NS+EM-ThM3, 157 Weller, T.: NS-MoM9, 86 Welzel, S.: EN+PS-WeM3, 133; PS+TCWeM2, 136 Wen, H.: SE-TuP4, 128 Wenger, W.N.: EN+NS-MoM5, 84 Werij, H.G.C.: VT-TuA7, 121 Werner, S.: BP+AS-SuA3, 78 Werner, W.S.M.: AS-MoM3, 82; AS-MoM6, 82 Wessel, S.: EN+AS-ThA6, 167 Westwood, J.N.: MN-MoA7, 94 Wetzel, C.: EM+TF+AS-ThA7, 167 Wheeler, V.D.: EM+OX-WeA8, 144; GR+AS+NS+SP+SS-TuA9, 115; GR+EM+ET+MS+NS-FrM3, 185; GR+EM+ET+MS+NS-FrM5, 185; GR+EM+ET+NS+TF-MoA1, 94; GR+EM+NS+PS+SS+TF-MoM1, 85; GR+EM+NS+PS+SS+TF-MoM3, 85; GR-ThP9, 176 White, C.T.: GR+AS+NS+SS-ThM4, 157
White, E.: EM+TF-WeM6, 133 White, M.G.: NS+AS+SS+SP-WeM12, 136; NS+AS+SS+SP-WeM5, 136 White, R.G.: AS-MoA2, 91; AS-MoM10, 82; AS-TuP11, 124; EW-TuL3, 111 Whitehead, N.P.: BN+AS-WeA9, 143 Whitten, D.G.: MB+BI-ThM9, 158 Whittle, J.D.: PS-ThA8, 170 Wichmann, A.: NS+AS+SS+SP-WeM3, 136 Wielunski, L.S.: AS-MoA10, 91 Wiemer, M.: EN+TF-TuA9, 114 Wiens, J.P.: SS-MoA1, 98 Wiesendanger, R.: NS-ThM1, 159 Wiesmann, H.P.: BI-TuP12, 125 Wijnaendts van Resandt, N.: EW-WeA5, 145 Wilbert, D.S.: ET+NS+EM-ThM11, 157 Wilcock, J.: TF-WeM6, 139 Wilde, M.: SS-MoA9, 98 Wildman, H.: EM+NS-FrM10, 183 Wilhelm, F.: SS+OX-WeM5, 138 Willey, T.M.: AS+TF+VT-FrM2, 183 William, C.T.: SS-ThM11, 161 Williams, A.: PS+TC-WeM11, 136 Williams, A.I.: PS2-MoA6, 97 Williams, P.: MB+BI-ThM12, 158 Williams, P.M.: BI+SS+AS-TuM1, 103 Williams, T.S.: PS+EM-MoM9, 87 Willman, J.T.: TF-ThP4, 180 Willunat, A.: HI+AS+BI+NS-ThM11, 158; HI+AS+BI+NS-ThM5, 158 Wilson-Rae, I.: MN-MoA1, 94 Wilt, D.: EN+NS-MoM10, 84 Winans, L.: TF+EN-MoA1, 98 Windisch, Jr., C.F.: AS+BI-TuA12, 113 Winkler, K.: GR+AS+NS+SP+SS-TuA1, 115 Winter, A.: HI+AS+BI+NS-ThM11, 158; HI+AS+BI+NS-ThM5, 158 Winter, B.: SS-ThA1, 171; SS-ThA2, 171 Winter, G.: AS+BI-TuM3, 102 Wirtz, T.: HI+AS+NS-WeA10, 146 Wise, R.: PS-MoM9, 88 Wissing, S.N.P.: MI-WeM1, 135 Witanachchi, S.: EN+NS-MoM6, 84; MI+OX-WeA9, 147; OX+EM+MI+NS+TF-MoM1, 87 Wittstock, A.: IS+AS+OX+ET-WeM6, 135; NS+AS+SS+SP-WeM3, 136 Witzke, M.: PS+EM-MoM11, 87 Wodtke, A.M.: SS-MoM4, 89 Woicik, J.C.: AS-ThA6, 166; AS-ThA8, 166; AS-TuP7, 124; EM-TuM5, 103; OX+SS+TF+MI-MoA9, 96 Wolden, C.A.: EN+TF-MoA10, 93; PS1TuA7, 117 Wolf, H.: NS+SP-MoA2, 95 Wolf, J.: VT-TuM10, 110; VT-TuM11, 110 Wolf, S.A.: EM+MI-ThA11, 166; MI+EN+BI-TuA7, 116 Wolkow, R.A.: HI+AS+NS-WeA7, 146; SP+AS+BI+ET+MI+NM+NS+SS+TFWeM2, 137 Woll, A.R.: IS+AS+BI+ET+GR+NS-TuA2, 116 Wöll, Ch.: GR-ThP3, 176; OX+SS+TF+MIMoA10, 96 Wolstenholme, J.: AS+BI-TuM11, 102 Wolter, B.: NS-ThM1, 159 Womack, V.M.: BN+AS-WeA12, 143 Won, J.: PS-WeM9, 137 Won, S.-O.: EN+TF-TuM12, 104 Wong, B.: MN-TuP7, 126 Wong, M.S.: EN+NS-ThM12, 156 Woo, J.C.: EM+TF+OX+GR-MoM8, 84; PSThP30, 179; TF+AS-WeA12, 151 Wood, B.C.: IS+AS+OX+ET-WeM6, 135 Woodroof, M.: TF+EN-MoA8, 98 Woods, A.S.: BN+AS-WeA12, 143 Woods, L.M.: GR-ThP4, 176
Wormeester, H.: EL+TF+BI+AS+EM+SSMoA8, 92 Wornyo, E.: PS-WeM11, 137 Worsley, M.A.: IS+AS+OX+ET-WeM6, 135 Wright, A.E.: AC+EN-TuM1, 102; ASMoM10, 82; AS-TuP10, 124; EW-TuL3, 111 Wu, C.: PS+EM-MoM5, 87 Wu, F.: PS-WeM1, 137; PS-WeM11, 137 Wu, H.: EN+AS-ThA7, 167; HI-ThP3, 177 Wu, I.-T.: MN-MoA4, 94 Wu, J.: AC+TF+SS+MI-MoA1, 91 Wu, K.H.: EM-ThM11, 156 Wu, M.-F.: PS2-MoA3, 97 Wu, M.-Y.: EN+TF-TuA3, 114 Wu, N.: MI+OX-WeA10, 147 Wu, R.: ET+NS+EM-ThM3, 157 Wu, S.: GR+AS+NS+SP+SS-TuA12, 115 Wu, Y.: EN+NS-ThA3, 168; PS-MoM11, 88; TF+EM+SE+NS-ThM3, 162; TF-TuM5, 109 Wu, Y.L.: PS-ThP36, 179; TC+EM+AS+TF+EN-ThM12, 162 Wu, Z.: BN+AS-WeA3, 143 Wuchter, P.: BI-TuP14, 125 Wüest, M.: MN-TuP1, 126; VT-MoM2, 90 Wygladacz, K.A.: AS-TuP19, 124 Wyrick, J.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM5, 137
— X —
Xia, D.: HI-ThP3, 177 Xia, Y.: SS-TuM10, 109 Xiao, Q.: AS+TF+VT-FrM1, 183 Xiao, Z.: EM-ThP13, 175; NS-ThP12, 178 Xie, J.: EM+TF+AS-ThA1, 167 Xie, K.: SS-WeA3, 150 Xie, X.: TF-WeM2, 139 Xing, G.: EM+OX-WeA3, 144 Xu, H.Y.: PS2-WeA1, 148 Xu, M.: NS-ThM2, 159 Xu, Y.: EL+TF+BI+AS+EM+SS-MoA9, 92; GR+AS+EM+NS+SS-WeA11, 145; PS2TuM9, 108 Xue, A.: PS+EM-MoM8, 87 Xue, J.: EM+TF-WeM9, 133
— Y —
Yacout, A.M.: AC+EN-TuM1, 102 Yagisawa, T.: PS+EM-MoM10, 87 Yague, J.L.: EM+TF-WeM11, 133 Yakimov, M.: EM+TF+OX+GR-MoM3, 84 Yakobson: GR+EM+NS+SS+TF-ThA8, 169 Yakou, F.: SS+OX-WeM5, 138 Yakovkin, I.N.: SS-TuP33, 129 Yamada, A.: TF-ThP12, 180 Yamada, T.: BI+SS+NS-WeM11, 132; PS+TC-WeM3, 136; SE+PS-TuA8, 118; SS-MoA10, 98; SS-TuP31, 129 Yamada-Takamura, Y.: TF+AS-WeA8, 151 Yamashita, I.: PS2-ThM10, 160 Yamashita, Y.: AS-ThA10, 166 Yamazaki, K.: GR-ThP5, 176 Yamazawa, Y.: PS1-WeA12, 148 Yan, H.: SS-WeA3, 150 Yan, L.: TC-ThP2, 180 Yan, YH.: VT-MoA1, 99 Yanagisawa, Y.: PS2-ThM11, 160 Yang, A.: AS-ThA10, 166 Yang, B.: EN+NS-ThM10, 156 Yang, C.S.: VT-TuA12, 121 Yang, G.-E.: MI-ThP1, 177 Yang, J.: EM+TF-WeM5, 133; MB+BIThM12, 158; PS+EM-MoM9, 87 Yang, K.: TF+AS+SS-ThA8, 171 Yang, K.-K.: EN+NS-ThM10, 156 Yang, L.: IS+AS+BI+ET+GR+NS-TuA12, 116
211
Yang, M.: EN+TF-TuA8, 114; PS2-TuM6, 108 Yang, P.: SS-TuP26, 129 Yang, Q.: PS2-TuM6, 108 Yang, X.: SS-WeA10, 150 Yang, Y.: NS+AS+SS+SP-WeM5, 136 Yang, Y.C.: VT+AS+SS-WeM1, 140 Yang, Y.J.: PS+EM-MoM4, 87; PS-ThP22, 179 Yanguas-Gil, A.: TC+EM+AS+TF+ENThM6, 162 Yao, B.: EM-TuA7, 114; EN+TF-TuM10, 104 Yao, K.: OX-TuP3, 127 Yaowarat, W.: NS-ThP11, 178 Yashina, L.: GR-ThP3, 176 Yasumura, S.: SS-TuP8, 129 Yasutake, K.: PS+TC-WeM3, 136; SE+PSTuA8, 118 Yates, Jr., J.T.: SS+EN+OX-ThM6, 161; SSTuM3, 109 Yatsuda, K.: PS-ThP12, 178 Yazawa, K.: SE+NS-MoA8, 97 Yazyev, O.V.: GR+AS+NS+SS-ThM5, 157 Yckache, K.: EM+TF+OX+GR-MoA9, 93 Ye, D.: TF+EM+SE+NS-ThM6, 162 Ye, J.: SS-TuM10, 109 Ye, L.: TF-ThP9, 180 Ye, Y.F.: SS-TuP37, 129 Yeh, P.: PS+EM-MoM9, 87 Yeh, P.-C.: SS-TuP2, 129 Yeh, Y.C.: IS-TuP1, 126 Yellen, B.: BI+SS+NS-WeM9, 132 Yeom, G.Y.: ET-ThP1, 176; PS+TC-WeM9, 136; PS2-ThM6, 160; PS-ThP24, 179; PSThP27, 179; PS-ThP28, 179; PS-ThP43, 179 Yesilkoya, F.: EM+OX-WeA9, 144 Yilmaz, D.E.: OX+SS+TF+MI-MoA1, 96; OX-TuP3, 127; TR-TuP1, 130 Yilmaz, E.: EN-ThP3, 175 Yilmaz, M.: MN-MoA3, 94 Yim, J.: PS+TC-WeM11, 136 Yin, J.: EM+TF-WeM11, 133 Yin, Y.: PS2-TuM6, 108; PS2-TuM9, 108; PS-ThP1, 178; PS-WeM1, 137; PSWeM11, 137 Yitamben, E.: SP-TuP2, 128 Yoda, S.: SS-ThA10, 171 Yokosuka, S.: PS2-ThM3, 160 Yokus, M.: TF2-TuA10, 120 Yoo, H.: EM-TuA12, 114 Yoon, H.M.: PS-ThP23, 179 Yoon, J.-H.: EN+TF-TuM12, 104 Yoon, K.H.: EM-ThP12, 175 Yoon, Y.: SS+EN+OX-ThM5, 161 Yoshida, H.: VT-MoA3, 99; VT-MoA4, 99 Yoshida, S.: TF-ThP2, 180 Yoshida, Y.: NS-ThM1, 159 Yoshikawa, A.: EM+TF+AS-ThA12, 167 Yoshikawa, J.: PS2-MoA11, 97 Yoshimura, M.: TR-TuP3, 130 Yoshimura, T.: GR+AS+NS+SS-ThM1, 157; TF+EM+SS-ThA3, 172 Yoshinaga, J.: VT-MoM1, 90 You, M.Y.: NS-ThP6, 178 You, S.-J.: PS-ThP4, 178; PS-ThP42, 179 Young, A.: GR+EM+ET+NS+TF-MoA10, 94 Young, L.: BI-MoA8, 92 Yu, C.C.: IS-TuP1, 126 Yu, G.-P.: TF-ThP3, 180 Yu, H.: PS+EM-MoM9, 87; SE+PS-TuM3, 108; SE+PS-TuM4, 108 Yu, J.: GR+AS+NS+SP+SS-TuA12, 115 Yu, S.W.: AC+MI+SS+TF-MoM9, 82 Yu, W.: SS-WeA9, 150 Yu, X.-Y.: IS+AS+BI+ET+GR+NS-TuA12, 116
Author Index
Yu, Z.: NS+AS+SS+SP-WeM4, 136; SSTuP19, 129 Yuan, H.: TF-ThP10, 180 Yuen, H.B.: EN+TF-TuA9, 114 Yun, D.J.: AS-ThA4, 166 Yun, J.-Y.: VT-TuP1, 130 Yun, M.G.: TC-ThP1, 180 Yurtsever, A.: SP+AS+BI+ET+MI+NSTuA11, 119 Yushin, G.: EN+NS-ThM4, 156
— Z —
Zandvliet, H.J.W.: EL+TF+BI+AS+EM+SSMoA8, 92 Zang, F.: BI+SS+NS-WeM2, 132 Zapata-Torres, M.A.: TF-ThP8, 180 Zapotok, D.W.: EM+OX-WeA8, 144 Zappe, M.: LB+EM+GR+MN+TR-WeA3, 146 Zarrouati, M.: GR+AS+BI+PS+SS-WeM1, 134 Zauscher, S.: BI+SS+NS-WeM9, 132 Zegenhagen, J.: AS-ThA7, 166; GR+AS+NS+SP+SS-TuA9, 115 Zehnder, D.: GR+EM+ET+MS+NS-FrM3, 185 Zeman, M.: EN+PS-WeM10, 133 Zendejas, J.: MN-TuP7, 126 Zeng, H.: TR-TuA4, 121 Zettl, A.: GR+AS+NS+SS-ThM5, 157 Zettsu, N.: NS-ThP4, 178 Zhakhovsky, V.: GR+AS+EM+MI+MNTuM10, 105 Zhan, Y.: GR+EM+NS+SS+TF-ThA3, 169 Zhang, B.: SS-TuM10, 109; TC+EM+ASWeA3, 150 Zhang, C.X.: EM+SS+AS+NS-ThM11, 155 Zhang, E.X.: EM+SS+AS+NS-ThM11, 155
Author Index
Zhang, F.: AS+BI-TuA2, 113; SS+EN+OXThM10, 161 Zhang, H.: HI+AS+BI+NS-ThM9, 158 Zhang, H.-Z.: PS-ThA10, 170 Zhang, J.Z.: TF+SE+NS-WeM3, 139 Zhang, K.H.L.: OX-TuP5, 127 Zhang, L.: GR+EM+ET+NS+TF-MoA11, 94; IS+AS+SS+EN-TuM3, 105; PS1-ThM2, 160; TF+AS-WeA1, 151 Zhang, Q.: PS-ThP1, 178 Zhang, S.: BI+AS-TuA3, 113; SS-TuP9, 129 Zhang, T.: MI-WeM11, 135; MI-WeM2, 135 Zhang, X.: EN+TF-MoA8, 93; EN+TFMoA9, 93; HI+AS+BI+NS-ThM5, 158; HI-ThP1, 177 Zhang, X.-G.: ET+SS+GR+SP-FrM1, 184; ET+SS+GR+SP-ThA6, 168 Zhang, Y.: ET+NS+EM-ThM3, 157; PS1TuM10, 107; PS1-TuM9, 107 Zhang, Z.: NS+EN-TuM11, 107; SS-TuM10, 109 Zhao, H.: IS+AS+SS+EN-TuM9, 105 Zhao, J.: PS1-TuM11, 107; PS1-WeA12, 148; PS2-MoA11, 97; PS-ThP16, 178 Zhao, S.-G.: SS-TuP9, 129 Zhao, X.: TR-TuA7, 121 Zhao, X.H.: MB+BI-ThA6, 169 Zhao, Y.: GR+EM+ET+NS+TF-MoA10, 94 Zhao, Y.-P.: EN+NS-ThM10, 156; TF+SE+NS-WeM12, 139; TF+SE+NSWeM3, 139 Zharnikov, M.: EM+TF-WeM1, 133 Zheng, H.: EM-ThP10, 175 Zheng, X.: TC+EM+AS+TF+EN-ThM11, 162 Zhernokletov, D.M.: EM-TuM3, 103
212
Zhitenev, N.B.: GR+EM+ET+NS+TFMoA10, 94 Zhou, B.: PS-MoM1, 88 Zhou, C.: AS+BI-TuA10, 113 Zhou, H.: EM-TuA1, 114; PS2-TuM11, 108 Zhou, J.: NS+AS+SS+SP-WeM5, 136; SS+NS-TuA12, 119; SS-TuP13, 129 Zhou, R.: EM+TF-WeM9, 133 Zhou, Y.H.: SS+NS-TuA12, 119; SS-TuP13, 129 Zhu, H.: TF+EN-MoA6, 98 Zhu, J.-H.: GR+EM+ET+NS+TF-MoA11, 94; IS+AS+SS+EN-TuM3, 105; SS+NSTuA11, 119; SS-TuM9, 109; SS-TuP35, 129; SS-TuP37, 129 Zhu, W.: PS-MoM8, 88 Zhu, Y.: SP+AS+BI+ET+MI+NM+NS+SS+TFWeM5, 137 Zhu, Y.-Z.: SS-TuP9, 129 Zhu, Z.: AS-MoA3, 91; EM+NS-FrM10, 183; IS+AS+BI+ET+GR+NS-TuA12, 116 Zirbs, R.: NS+EN+GR-TuA1, 117 Zoffmann Andersen, O.: BI-MoM2, 83 Zohar, S.: MI+SP+AS-ThM12, 159 Zollner, S.: EL+TF+AS+EM+SS-TuP2, 125; EL+TF+BI+AS+EM+SS-MoA9, 92; EM+NS-FrM9, 183 Zonooz, P.: EN-ThP11, 175 Zorn, G.: TF-ThP5, 180 Zufelt, K.: LB+EM+GR+MN+TR-WeA3, 146 Zuilhof, H.: BI+SS+AS-TuM5, 103; EM+TFWeM3, 133; TF+EM+SS-ThA4, 172 Zuluaga, S.: EN+SS-FrM7, 184 Zumbülte, A.: MI-WeM1, 135 Zunft, H.: NM+NS+MS+EM-MoA9, 95
AVS-59 EXHIBIT PROGRAM
Exhibit Hall Special Events • Exhibitor Profiles • Exhibitor Product Locator • Exhibit Schedule Sponsors • Corporate Members • Advertisements and Promotions • Free Attractions
213
AVS-59
Exhibit Show Guide TABLE OF CONTENTS EXHIBIT HALL SCHEDULE Oct. 30
Tuesday
10am - 5:30pm
Oct. 31
Wednesday
10am - 4:30pm
Nov. 1
Thursday
10am - 2:00pm
Special Events & Attractions............215 Sponsors & Corporate Members...... 218 Exhbitor Quick Reference List..........219 Exhibit Hall Floor Plan ..................... 220 Product Locator .............................. 221 Exhibitor Profiles ............................ 231 New AVS Exhibitors ........................ 262 AVS-60 2013 ................................... 266
EXHIBIT HALL ATTRACTIONS •Instrumentation •Equipment •Services •Consulting •Journals / Books •Professional Literature •Career Center / Employment Services •AVS Membership & Education Booth •Free Morning Coffee •Free Lunch •Technology Spotlight Sessions •Free Afternoon Refreshments •Art Zone Display & Competition •Raffle Drawings •AVS Store: Gifts/Souvenirs/Supplies •Ask The Experts - Vacuum Technology •Internet Access / E-Mail Pavilion •Caricatures •Massages - Neck/Shoulder/Back
214
Special Events & Attractions 2nd Annual Foosball Tournament
WELCOME MIXER - RIVER WALK
Monday, October 29
5:30 - 7:30
Join the fun at Booth 722 in the Exhibit Hall Sign up begins at 10am Tuesday, October 30th
FUN and NETWORKING at its best! The Welcome Mixer offers food, refreshments, music and the opportunity to casually interface with fellow AVS attendees and exhibitors from around the world. Everyone is welcome at the Mixer! AVS thanks Physical Electronics and Thermo Scientific for their generous support.
1st Place Takes Home the Grand Prize !!
ASK THE EXPERTS BOOTH BOOTH 528 An unbiased, open forum staffed by experts in various aspects of vacuum technology to discuss and help solve vacuum related issues. Stop by for some free therapy! Challenge our experts and receive a free souvenir while supplies last!! Sponsored by Duniway Stockroom, SAES Getters and Brooks Automation.
Hosted and Sponsored by:
AVS STORE, MEMBERSHIP & EDUCATION CENTER
BOOTH 733 Make the right connections at AVS. Visit the career center to post job openings or search available positions. The AVS Career Center provides the opportunity for attendees and exhibitors to find a perfect fit within a specific field of expertise. Private interview rooms are available.
BOOTH 733
CAREER CENTER
AVS EDUCATIONAL MATERIALS: •Videos •Books •Monographs •Membership Services AVS Store: •AVS Logo Items Flash Drives Clothing Souvenirs
215
Special Events & Attractions EXHIBITOR TECHNOLOGY BOOTH 701 SPOTLIGHT SESSIONS Keep up to date with the latest technology! Exhibitors showcase new products, services and applications during brief 20 minute presentations. Sessions are scheduled during the technical session breaks. Be one of the first to arrive and receive an AVS-59 souvenir!
CARICATURISTS BOOTH 333 Visit the Special Events booth for your FREE AVS58 Souvenir. Our caricature artists will be available during all Exhibit Hall hours. You will find your ticket in your registration kit. Ticket must be validated at Booth 600. Generously sponsored by Kratos Analytical. MASSAGE THERAPISTS
BOOTH 333
Free Chair Massages! Unwind and enjoy some relaxation. You will find your ticket in your registration kit. Tickets must be validated at Booth 300
Participating Companies: Asylum Research Kratos Analytical Brooks Automation Bruker Corporation Carl Zeiss Microscopy, LLC Edwards Vacuum ESI Group Heidelberg Instruments, Inc. Huettinger Electronic KP Technology Kurt J. Lesker Company Specs Surface Nano Analysis GmbH Mantis Deposition Mewasa North America, Inc. Physical Electronics Plasma-Therm Semicore Equipment, Inc. Thermo Scientific
Generously Sponsored by Vacuum Research Corp.
E-MAIL PAVILION
BOOTH 317 A convenient place for attendees to keep in touch with the outside world. Check your email, flights, print boarding passes, etc. Generously sponsored by Specs Surface Nano Analysis
LEEDS HISTORY DISPLAY BOOTH 539 Come see actual examples of historical vacuum equipment. The AVS History Committee is starting a series of displays highlighting vacuum companies from the inception of the American Vacuum Society.
A special multi-vendor session will take place on Thursday at 12pm to discuss XRAYS Imaging Techniques. Panel Discussion includes Kratos, Omicron, Thermo Scienfic & Physcial Electronics.
216
Special Events & Attractions ART ZONE / CONTEST See graphic designs in the form of art from fellow AVS attendees who will compete in our fourth annual art contest. Take a look at this amazing display and don’t forget to vote! Prizes will be announced at the Exhibit Finale on Thursday.
BOOTH 222
RAFFLE ZONE BOOTH 733 Find your entry tickets in your registration packet. There are daily raffle tickets - PLUS.. TWO GRAND PRIZE RAFFLES for Wednesday and Thursday!!! Drop your tickets in the appropriate raffle drums located in Booth 733 in the Exhibit Hall. Raffle Prize Preview... iPad
Netbook Computers
First Place: $500 Second: $250 Third: $100 Generously Sponsored by AJA International
Tuesday onl y!!!!
KINDLE KRAZE EVERY DAY !!
RAFFLE SPONSORS •AIP •Agilent - VPD •BellowsTech •Bruker Corporation •Ebara Technologies •Edwards Vacuum •ION-TOF USA •Kratos Analytical •Kurt J. Lesker •Mantis Deposition •Omicron
•PHPK •RBD Instruments •Scientific Instrument Services •Semicore •Shimadzu Scientific •Super Conductor Materials •Thermo Scientific •UC Components •Vacuum Research Corp. •VG Scienta
GRAND PRIZE THURSDAY
Generously Sponsored by...
217
Sponsors & Cor porate Members AVS wishes to acknowledge and thank the following companies for their generous support of the Symposium & Exhibition
AVS-59 SPONSORS Kratos Analytical Physical Electronics SPECS Surface Nano Analysis, Inc. Vacuum Research Corp. Asylum Research Thermo Scientific Kurt J Lesker Company Agilent Technologies Duniway Stockroom Corp Brooks Automation Agilent Vacuum Products R.D. Mathis Company AJA International, Inc. SAES Getters USA Extrel CMS MEWASA North America, Inc. ION-TOF USA Zeon Chemicals L.P. Gamma Vacuum RF VII Inc. Shimadzu Scientific Instruments Mantis Deposition Ltd RHK Technology Inc. PHPK Technologies Ebara Technologies Semicore Equipment, Inc. Thermo Scientific Super Conductor Materials Edwards Vacuum BellowsTech, LLC Scientific Instrument Services, Inc. Bruker Corporation RBD Instruments, Inc. UC Components VG Scienta Medtronic LLNL LAM Research RHK Technology Omicron Nanotechnology GE Global Research Intel Applied Materials Global Foundries ONR Grant (via U of IL) John Woollam Company ONR
2012 CORPORATE MEMBERS Advanced Energy Industries Inc. Agilent Technologies AJA International, Inc. Alicat Scientific, Inc Altair Technologies, Inc. Asylum Research BellowsTech, LLC Bruker Nano Surfaces Cambridge NanoTech Capitol Vacuum Parts CeramTec North America Chuanbei Vacuum Technology (Beijing) Co., Ltd. Denton Vacuum LLC Duniway Stockroom Corp Edwards Vacuum, Inc. Evans Analytical Group FMG Enterprises, Inc. Gamma Vacuum GNB Corporation Helium Leak Testing, Inc. Hiden Analytical, Inc Hine Automation HUETTINGER Electronic, Inc. HVS Leak Detection Innovative Vacuum Solutions, Inc. Intellivation, LLC ION-TOF USA Inc. Kratos Analytical Kurt J. Lesker Company Lam Research Corporation M&I Materials Ltd (Apiezon) MeiVac, Inc. MEWASA North America, Inc. MKS Instruments Inc Nor-Cal Products
218
Nordiko Technical Services Limited Omicron Nanotechnology USA, LLC Oxford Instruments Pfeiffer Vacuum Technology Physical Electronics Plasmaterials Inc Plasma-Therm PREVAC sp. z o.o. Process Materials Inc R.D. Mathis Company RBD Instruments, Inc. RF VII Inc. RHK Technology Inc. SAES Getters USA, Inc. Scientific Instruments, Inc. Semicore Equipment Sequoia Brass and Copper SPECS Surface Nano Analysis Staib Instruments, Inc. Sumitomo (SHI) Cryogenics of America, Inc. Super Conductor Materials Inc Ted Pella, Inc. Thermionics Laboratories, Inc Thermo Fisher Scientific Transfer Engineering and Manufacturing Inc Trillium US U-C Components Inc Vacuum Engineering & Materials Co., Inc. Vacuum Research Corp. VAT Inc VG Scienta, Inc.
AVS-59
EXHIBITORS Booth 510 502 515 323 308 217 326 531 638 529 312 332 410 517 528 333 222 733 733 733 223 701 722 341 539 728 506 413 714 424 311 311 311 635 435 522 525 727 903 607 715 423 409 422 513 540 205 411
Company Name A&N Corporation Accu-Glass Products Inc. Advanced Chemical Company Agilent Technologies, Vacuum Products Division AJA International, Inc. Alicat Scientific, Inc. American Institute of Physics Anasys Instruments Angstrom Scientific Inc Annealsys Applied Surface Technologies Association of Vacuum Equipment Manufacturers Asylum Research Atlas Technologies AVS - Ask The Experts AVS Special Events AVS Art Zone & Contest AVS Career Center AVS Membership & Education AVS Raffle Zone AVS E-Mail Pavilion AVS Exhibitor Technology AVS Foosball Tournament AVS Future Sites AVS History Booth AVS Publications BellowsTech, LLC Beneq BJA Magnetics Brooks Automation Bruker AXS, Inc. Bruker Corporation Bruker Optics, Inc. Cambridge NanoTech, Inc. CAMECA Instruments, Inc. Capitol Vacuum Carl Zeiss Microscopy, LLC CeramTec North America COSMOTEC Corporation CVD Equipment Corporation Denton Vacuum LLC Duniway Stockroom Corp Eagle Instrument Services Ebara Technologies Edwards Vacuum Elsevier (NY) ESI Extrel CMS
Booth 726 519 724 633 213 636 617 200 500 706 524 330 708 211 738 401 328 623 725 529 201 212 301 210 601 627 732 203 615 625 214 316 629 534 637 440 538 901 322 537 219 609 431 501 238 216 718 905 630
Company Name FEI Company Friatec N.A. LLC Gamma Vacuum Glas-Col. HeatWave Labs Inc. Heidelberg Instruments, Inc Hiden Analytical, Inc. Hine Automation Horiba Scientific Huettinger Electronic Impedans Ltd. Inland Vacuum Industries, Inc. Innovative Vacuum Solutions Inc. InstruTech, Inc. Intel Corporation ION-TOF USA J.A. Woollam Co., Inc. Julabo USA, Inc. Kashiyama-USA Inc. Kemstream Kimball Physics Inc. KP Technology Kratos Analytical Kurdex Corporation Kurt J Lesker Company Labtec Sales Partners LLC Lam Research Mantis Deposition Ltd McAllister Technical Services McVac Manufacturing MDC Vacuum Products, LLC MEWASA North America, Inc. Micromatter MKS Instruments Mustang Vacuum Systems National Nanotechnology Infrastructure Network (NNIN) Nonsequitur Technologies Nor-Cal Products, Inc. Omicron Nanotechnology USA Omley Industries, Inc. Oxford Instruments - Austin Pfeiffer Vacuum Technology, Inc. PHPK Technologies Physical Electronics Physics Today Exhibitor Lounge Phytron, Inc. Plasmaterials, Inc. Plasma-Therm Precision Ceramics USA
219
Booth 616 314 614 318 416 641 612 405 716 329 427 709 334 634 301 301 327 317 438 202 723 618 325 611 209 441 439 622 218 639 717 417 416 631 624 504 610 535 300 628 428 523 640 210 215 511
Company Name Precision Plus Vacuum Parts Prevac sp. z o.o. PVD Products R.D. Mathis Company RBD Instruments, Inc. Refining Systems RF VII Inc. RHK Technology Inc. Rocky Mountain Vacuum Tech., Inc. SAES Getters USA Scientific Instrument Services, Inc. Semicore Equipment, Inc. Semilab SDI LLC Shanghai Joysun Machinery & Electric Equipment Manufacture Co. Shimadzu Precision Instruments Shimadzu Scientific Instruments Solid Sealing Technology, Inc. SPECS Surface Nano Analysis, Inc. SPI Supplies Springer Staib Instruments Sumitomo (SHI) Cryogenics of America Incorporated Super Conductor Materials Sycon Instruments, Inc. Synergy Systems Corporation Synergy Vacuum, Inc. Tech-X Corporation Ted Pella, Inc. Telemark TGM Inc. Thermionics Vacuum Products Thermo Scientific Torr Scientific Tracs Chillers Transfer Engineering & Manufacturing, Inc. Trek, Inc. UC Components Vacuubrand, Inc. Vacuum Research Corp. Value Mechanical & Electrical Products Co., Ltd. VAT VG Scienta Welch-Ilmvac Wiley Yugyokuen Ceramics Co., Ltd. Zeon Chemicals L.P.
AVS-59 EXHIBIT HALL FLOOR PLAN
220
PRODUCT LOCATOR The PRODUCT LOCATOR has been designed to a s s i s t AV S - 5 9 at t e n d e e s i n l o c at i n g p ro d u c t s and services of fered by the AVS-59 Exhibitors who are showcasing their technology in the Exhibit Hall. The Product Locator is listed alphabetically by p ro d u c t c at ego r i e s fo l l o we d by t h e s u p p l i e r and their corresponding booth location.
221
PRODUCT LOCATOR ANALYTICAL Applied Surface Technologies BJA Magnetics Brooks Automation CAMECA Instruments, Inc. Heidelberg Instruments, Inc. Horiba Scientific ION-TOF USA J.A. Woollam Co., Inc. KP Technology McAllister Technical Services MEWASA North America, Inc. Pfeiffer Vacuum Technology, Inc. Physical Electronics PVD Products RHK Technology Inc. SAES Getters USA SPECS Surface Nano Analysis, Inc. Staib Instruments
BOOTH 312 714 424 435 636 500 401 328 212 615 316 609 501 614 405 329 317 723
ANALYTICAL INSTRUMENTATION Asylum Research Brooks Automation Bruker AXS, Inc. Bruker Corporation CAMECA Instruments, Inc. Carl Zeiss Microscopy, LLC Extrel CMS FEI Company Heidelberg Instruments, Inc. Hiden Analytical, Inc. Impedans Ltd. ION-TOF USA J.A. Woollam Co., Inc. Kimball Physics Inc. KP Technology Kratos Analytical MKS Instruments Omicron Nanotechnology USA Pfeiffer Vacuum Technology, Inc. Physical Electronics Prevac sp. z o.o. RBD Instruments, Inc. RF VII Inc. Scientific Instrument Services, Inc. Shimadzu Scientific Instruments SPECS Surface Nano Analysis, Inc. Staib Instruments Thermo Scientific Trek, Inc. VG Scienta Yugyokuen Ceramics Co., Ltd.
410 424 311 311 435 525 411 726 636 617 524 401 328 201 212 301 534 322 609 501 314 416 612 427 301 317 723 417 504 523 215
AUGER ELECTRON SPECTROMETERS Kratos Analytical Omicron Nanotechnology USA Physical Electronics Prevac sp. z o.o. RBD Instruments, Inc. SPECS Surface Nano Analysis, Inc. Staib Instruments Thermo Scientific VG Scienta
BOOTH 301 322 501 314 416 317 723 417 523
BELLOWS CONTACTS BellowsTech, LLC McAllister Technical Services MEWASA North America, Inc.
506 615 316
BELLOWS: MINIATURE METAL BellowsTech, LLC MDC Vacuum Products, LLOC MEWASA North America, Inc. Ted Pella, Inc.
506 214 316 622
BONDING TECHNIQUES BJA Magnetics Omley Industries, Inc. Plasmaterials, Inc. Super Conductor Materials Ted Pella, Inc. Yugyokuen Ceramics Co., Ltd.
714 537 718 325 622 215
CALIBRATION SERVICES Applied Surface Technologies MKS Instruments Semicore Equipment, Inc.
312 534 709
CHILLERS, COOLING SYSTEMS BJA Magnetics Brooks Automation Julabo USA, Inc. RF VII Inc. Telemark Tracs Chillers
714 424 623 612 218 631
CLEANING SERVICES Applied Surface Technologies Ebara Technologies Gamma Vacuum Scientific Instrument Services, Inc. Thermionics Vacuum Products
312 422 724 427 717
222
PRODUCT LOCATOR CONSULTING ASK THE EXPERTS - VAC TECH DIV. CVD Equipment Corporation Impedans Ltd. ION-TOF USA Labtec Sales Partners LLC McAllister Technical Services PHPK Technologies Semicore Equipment, Inc. Synergy Vacuum, Inc. Tech-X Corporation Trek, Inc. COUPLINGS: FLEXIBLE SHAFT BellowsTech, LLC BJA Magnetics MEWASA North America, Inc. CUSTOM VACUUM SYSTEMS Agilent Technologies AJA International, Inc. Atlas Technologies CeramTec North America COSMOTEC Corporation CVD Equipment Corporation Edwards Vacuum Extrel CMS Gamma Vacuum HeatWave Labs Inc. Hiden Analytical, Inc. Hine Automation Kimball Physics Inc. Kurt J Lesker Company Lam Research Mantis Deposition Ltd McAllister Technical Services MDC Vacuum Products, LLOC MEWASA North America, Inc. MKS Instruments Nor-Cal Products, Inc. Omicron Nanotechnology USA Omley Industries, Inc. PHPK Technologies Prevac sp. z o.o. PVD Products RF VII Inc. RHK Technology Inc. Rocky Mountain Vacuum Tech., Inc. Semicore Equipment, Inc. Staib Instruments Thermionics Vacuum Products Transfer Engineering & Manufacturing, Inc. Vacuubrand, Inc. VG Scienta
BOOTH 528 607 524 401 627 615 431 709 441 439 504 506 714 316 323 308 517 727 903 607 513 411 724 213 617 200 201 601 732 203 615 214 316 534 901 322 537 431 314 614 612 405 716 709 723 717 624 535 523
CONSULTING Ask The Experts - Vacuum Tech. Div. CVD Equipment Corporation Impedans Ltd. ION-TOF USA Labtec Sales Partners LLC Kurdex Corporation McAllister Technical Services PHPK Technologies Semicore Equipment, Inc. Synergy Vacuum, Inc. Tech-X Corporation Trek, Inc. COUPLINGS: FLEXIBLE SHAFT BellowsTech, LLC BJA Magnetics MEWASA North America, Inc. CUSTOM VACUUM SYSTEMS Agilent Technologies AJA International, Inc. Atlas Technologies CeramTec North America COSMOTEC Corporation CVD Equipment Corporation Edwards Vacuum Extrel CMS Gamma Vacuum HeatWave Labs Inc. Hiden Analytical, Inc. Hine Automation Kimball Physics Inc. Kurdex Corporation Kurt J Lesker Company Lam Research Mantis Deposition Ltd McAllister Technical Services MDC Vacuum Products, LLOC MEWASA North America, Inc. MKS Instruments Nor-Cal Products, Inc. Omicron Nanotechnology USA Omley Industries, Inc. PHPK Technologies Prevac sp. z o.o. PVD Products RF VII Inc. RHK Technology Inc. Rocky Mountain Vacuum Tech., Inc. Semicore Equipment, Inc. Staib Instruments Thermionics Vacuum Products Transfer Engineering & Manufacturing, Inc. Vacuubrand, Inc. VG Scienta
223
BOOTH 528 607 524 401 627 210 615 431 709 441 439 504 506 714 316 323 308 517 727 903 607 513 411 724 213 617 200 201 210 601 732 203 615 214 316 534 901 322 537 431 314 614 612 405 716 709 723 717 624 535 523
PRODUCT LOCATOR DETECTORS / MULTIPLIERS Extrel CMS Hiden Analytical, Inc. RBD Instruments, Inc. Scientific Instrument Services, Inc. SPECS Surface Nano Analysis, Inc.
BOOTH 411 617 416 427 317
E-BEAM GUN POWER SUPPLIES FEI Company Kimball Physics Inc. MDC Vacuum Products, LLOC Prevac sp. z o.o. Staib Instruments Sycon Instruments, Inc. Telemark Thermionics Vacuum Products Trek, Inc.
726 201 214 314 723 611 218 717 504
E-BEAM GUN SWEEPS Impedans Ltd. Kimball Physics Inc. MDC Vacuum Products, LLOC Prevac sp. z o.o. Telemark Thermionics Vacuum Products
524 201 214 314 218 717
E-BEAM GUNS Carl Zeiss Microscopy, LLC FEI Company HeatWave Labs Inc. Kimball Physics Inc. Labtec Sales Partners LLC Mantis Deposition Ltd McAllister Technical Services MDC Vacuum Products, LLOC Prevac sp. z o.o. Staib Instruments Super Conductor Materials Telemark Thermionics Vacuum Products Yugyokuen Ceramics Co., Ltd.
525 726 213 201 627 203 615 214 314 723 325 218 717 215
ELECTROFORMING SERVICES BellowsTech, LLC
506
ELECTROFORMS: CUSTOM BellowsTech, LLC
506
EQUIPMENT, USED Capitol Vacuum Duniway Stockroom Corp Eagle Instrument Services Ebara Technologies FEI Company Gamma Vacuum Hine Automation Kurdex Corporation Labtec Sales Partners LLC Pfeiffer Vacuum Technology, Inc. RBD Instruments, Inc. RF VII Inc. Semicore Equipment, Inc.
BOOTH 522 423 409 422 726 724 200 210 627 609 416 612 709
FITTINGS, GASKETS, FLANGES, SEALS A&N Corporation Atlas Technologies BellowsTech, LLC BJA Magnetics Capitol Vacuum CeramTec North America COSMOTEC Corporation Duniway Stockroom Corp Ebara Technologies Innovative Vacuum Solutions Inc. Kimball Physics Inc. Kurt J Lesker Company Lam Research McAllister Technical Services MDC Vacuum Products, LLOC MEWASA North America, Inc. MKS Instruments Nor-Cal Products, Inc. Omley Industries, Inc. Pfeiffer Vacuum Technology, Inc. Precision Plus Vacuum Parts Scientific Instrument Services, Inc. Solid Sealing Technology, Inc. Synergy Vacuum, Inc. Ted Pella, Inc. Thermionics Vacuum Products UC Components Vacuubrand, Inc. VG Scienta Yugyokuen Ceramics Co., Ltd.
510 517 506 714 522 727 903 423 422 708 201 601 732 615 214 316 534 901 537 609 616 427 327 441 622 717 610 535 523 215
FT-IR Bruker Optics, Inc. MKS Instruments Prevac sp. z o.o. Shimadzu Scientific Instruments Thermo Scientific
311 534 314 301 417
224
PRODUCT LOCATOR GAS CONTROL SYSTEMS Alicat Scientific, Inc. Brooks Automation CeramTec North America CVD Equipment Corporation Kemstream Lam Research MDC Vacuum Products, LLOC MKS Instruments
BOOTH 217 424 727 607 529 732 214 534
GAUGES, TUBES A&N Corporation Agilent Technologies Brooks Automation Duniway Stockroom Corp Hiden Analytical, Inc. Instrutech, Inc. Kurt J Lesker Company MDC Vacuum Products, LLOC MKS Instruments Pfeiffer Vacuum Technology, Inc. Precision Plus Vacuum Parts RBD Instruments, Inc. Scientific Instrument Services, Inc. Thermionics Vacuum Products Vacuubrand, Inc. Vacuum Research Corp. VG Scienta
510 323 424 423 617 211 601 214 534 609 616 416 427 717 535 300 523
GC-MS Shimadzu Scientific Instruments
301
GLASSWARE A&N Corporation RBD Instruments, Inc. Scientific Instrument Services, Inc.
510 416 427
ION / ELECTRON GUNS BJA Magnetics Carl Zeiss Microscopy, LLC FEI Company Friatec N.A. LLC HeatWave Labs Inc. Hiden Analytical, Inc. ION-TOF USA Kimball Physics Inc. Kurt J Lesker Company Nonsequitur Technologies Omicron Nanotechnology USA Prevac sp. z o.o. RBD Instruments, Inc. SPECS Surface Nano Analysis, Inc. Staib Instruments
714 525 726 519 213 617 401 201 601 538 322 314 416 317 723
ION BEAM DEPOSITION SYSTEMS/GUNS AJA International, Inc. CeramTec North America HeatWave Labs Inc. Hiden Analytical, Inc. Impedans Ltd. Kurdex Corporation Kurt J Lesker Company Mantis Deposition Ltd McAllister Technical Services PVD Products Rocky Mountain Vacuum Tech., Inc. Semicore Equipment, Inc. Trek, Inc.
BOOTH 308 727 213 617 524 210 601 203 615 614 716 709 504
LEAK DETECTORS A&N Corporation Agilent Technologies Duniway Stockroom Corp Hiden Analytical, Inc. Innovative Vacuum Solutions Inc. MKS Instruments Pfeiffer Vacuum Technology, Inc. Synergy Systems Corporation Synergy Vacuum, Inc.
510 323 423 617 708 534 609 209 441
LITHOGRAPHY SYSTEMS Carl Zeiss Microscopy, LLC Heidelberg Instruments, Inc. Labtec Sales Partners LLC Trek, Inc.
525 636 627 504
MACHINING (BULK AND SPECIAL) Atlas Technologies MDC Vacuum Products, LLOC Precision Ceramics USA Scientific Instrument Services, Inc. Super Conductor Materials
517 214 630 427 325
MACHINING (REPAIR, REFURB, MODS) Atlas Technologies McAllister Technical Services Precision Ceramics USA Precision Plus Vacuum Parts Scientific Instrument Services, Inc. Super Conductor Materials
517 615 630 616 427 325
225
PRODUCT LOCATOR MAGNETRON SPUTTERING CATHODES AJA International, Inc. BJA Magnetics Kurdex Corporation Kurt J Lesker Company Labtec Sales Partners LLC Mantis Deposition Ltd PVD Products Refining Systems SPI Supplies Super Conductor Materials Ted Pella, Inc.
BOOTH 308 714 210 601 627 203 614 641 438 325 622
MAGNETRON SPUTTERING EQUIPMENT AJA International, Inc. BJA Magnetics CVD Equipment Corporation Impedans Ltd. Kurdex Corporation Kurt J Lesker Company Labtec Sales Partners LLC Mantis Deposition Ltd Plasmaterials, Inc. PVD Products SPI Supplies Ted Pella, Inc.
308 714 607 524 210 601 627 203 718 614 438 622
MASS FLOW CONTROLLER/ACCESSORIES Alicat Scientific, Inc. CeramTec North America Horiba Scientific Kemstream Lam Research MKS Instruments Nor-Cal Products, Inc.
217 727 500 529 732 534 901
MATERIALS / STANDARDS AJA International, Inc. CAMECA Instruments, Inc. Kurt J Lesker Company Plasmaterials, Inc. Precision Ceramics USA R.D. Mathis Company Refining Systems Scientific Instrument Services, Inc. SPI Supplies Super Conductor Materials Ted Pella, Inc. Yugyokuen Ceramics Co., Ltd. Zeon Chemicals L.P.
308 435 601 718 630 318 641 427 438 325 622 215 511
MATERIALS TESTING Applied Surface Technologies Asylum Research Bruker Corporation CAMECA Instruments, Inc. CeramTec North America ION-TOF USA J.A. Woollam Co., Inc. Julabo USA, Inc. Kimball Physics Inc. KP Technology Omicron Nanotechnology USA RHK Technology Inc. SPECS Surface Nano Analysis, Inc. SPI Supplies Staib Instruments Trek, Inc.
BOOTH 312 410 311 435 727 401 328 623 201 212 322 405 317 438 723 504
MICROSCOPY Anasys Instruments Asylum Research Bruker Corporation CAMECA Instruments, Inc. Carl Zeiss Microscopy, LLC FEI Company Horiba Scientific Omicron Nanotechnology USA Pfeiffer Vacuum Technology, Inc. PVD Products Refining Systems Shimadzu Scientific Instruments SPECS Surface Nano Analysis, Inc. SPI Supplies Ted Pella, Inc. Thermo Scientific
531 410 311 435 525 726 500 322 609 614 641 301 317 438 622 417
NANOFABRICATION SYSTEMS Annealsys Beneq Cambridge NanoTech, Inc. CVD Equipment Corporation FEI Company Hine Automation Labtec Sales Partners LLC MEWASA North America, Inc. Plasma-Therm
529 413 635 607 726 200 627 316 905
226
PRODUCT LOCATOR OVENS, VACUUM Annealsys Glas-Col HeatWave Labs Inc. Hiden Analytical, Inc. Prevac sp. z o.o. RBD Instruments, Inc. Rocky Mountain Vacuum Tech., Inc. Ted Pella, Inc.
BOOTH 529 633 213 617 314 416 716 622
PARTICLE MONITORING CAMECA Instruments, Inc. Horiba Scientific MKS Instruments
435 500 534
PLANAR MAGNETRON CATHODS AJA International, Inc. Kurdex Corporation Kurt J Lesker Company Labtec Sales Partners LLC PVD Products Refining Systems Super Conductor Materials
308 210 601 627 614 641 325
PROCESS CONTROLLERS/MONITORS Extrel CMS Glas-Col Horiba Scientific Impedans Ltd. Kurt J Lesker Company MKS Instruments Plasma-Therm Telemark
411 633 500 524 601 534 905 218
PUBLISHERS American Institute of Physics AVS Publications Elsevier (NY) Physics Today Springer Wiley
326 728 540 238 202 210
BOOTH PUMPS, EQUIPMENT, SERVICES & SUPPLIES Agilent Technologies 323 Brooks Automation 424 Capitol Vacuum 522 Duniway Stockroom Corp 423 Eagle Instrument Services 409 Ebara Technologies 422 Edwards Vacuum 513 Extrel CMS 411 Friatec N.A. LLC 519 Gamma Vacuum 724 Glas-Col 633 HeatWave Labs Inc. 213 Inland Vacuum Industries, Inc. 330 Innovative Vacuum Solutions Inc. 708 Kashiyama-USA Inc. 725 Kurt J Lesker Company 601 Lam Research 732 Omley Industries, Inc. 537 Oxford Instruments - Austin 219 Pfeiffer Vacuum Technology, Inc. 609 PHPK Technologies 431 Precision Plus Vacuum Parts 616 RBD Instruments, Inc. 416 SAES Getters USA 329 Scientific Instrument Services, Inc. 427 Semicore Equipment, Inc. 709 SPI Supplies 438 Sumitomo (SHI) Cryogenics of America Inc. 618 Synergy Systems Corporation 209 Synergy Vacuum, Inc. 441 Ted Pella, Inc. 622 Thermionics Vacuum Products 717 Vacuubrand, Inc. 535 Vacuum Research Corp. 300 Value Mechanical & Electrical Products Co., Ltd. 628 RAMAN SPECTROSCOPY Bruker Corporation Bruker Optics, Inc. CVD Equipment Corporation Horiba Scientific Shimadzu Scientific Instruments Thermo Scientific
227
311 311 607 500 301 417
PRODUCT LOCATOR RF SYSTEMS/GENERATORS/POWER SUPPLIES Extrel CMS Huettinger Electronic Impedans Ltd. Kurt J Lesker Company Lam Research MKS Instruments PVD Products RF VII Inc. Semicore Equipment, Inc.
BOOTH 411 706 524 601 732 534 614 612 709
SCANNING PROBE MICROSCOPY SYSTEMS Anasys Instruments Asylum Research Bruker Corporation CAMECA Instruments, Inc. Carl Zeiss Microscopy, LLC ION-TOF USA KP Technology Omicron Nanotechnology USA Prevac sp. z o.o. SPECS Surface Nano Analysis, Inc.
531 410 311 435 525 401 212 322 314 317
SOFTWARE Carl Zeiss Microscopy, LLC CVD Equipment Corporation ESI Impedans Ltd. RBD Instruments, Inc. Tech-X Corporation
525 607 205 524 416 439
SPECTROMETER ACCESSORIES BJA Magnetics Brooks Automation CeramTec North America Extrel CMS Hiden Analytical, Inc. Horiba Scientific KP Technology Scientific Instrument Services, Inc. Telemark
714 424 727 411 617 500 212 427 218
SPUTTERING DEPOSITION SYSTEM AJA International, Inc. BJA Magnetics Brooks Automation CeramTec North America CVD Equipment Corporation Hiden Analytical, Inc. Impedans Ltd. Kurdex Corporation Kurt J Lesker Company Labtec Sales Partners LLC Mantis Deposition Ltd McAllister Technical Services Nor-Cal Products, Inc. Omicron Nanotechnology USA PVD Products RF VII Inc. Rocky Mountain Vacuum Tech., Inc. SAES Getters USA Semicore Equipment, Inc. SPECS Surface Nano Analysis, Inc. Ted Pella, Inc. VG Scienta THICKNESS MONITORS/MEASUREMENT Bruker Corporation Hiden Analytical, Inc. Horiba Scientific J.A. Woollam Co., Inc. MDC Vacuum Products, LLOC Plasma-Therm Prevac sp. z o.o. Sycon Instruments, Inc. Ted Pella, Inc. Telemark
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BOOTH 308 714 424 727 607 617 524 210 601 627 203 615 901 322 614 612 716 329 709 317 622 523
311 617 500 328 214 905 314 611 622 218
PRODUCT LOCATOR THIN FILM VACUUM COATING Annealsys Beneq Bruker Corporation Cambridge NanoTech, Inc. CeramTec North America CVD Equipment Corporation Friatec N.A. LLC Hiden Analytical, Inc. Hine Automation Impedans Ltd. Kemstream Kurdex Corporation Labtec Sales Partners LLC Mantis Deposition Ltd MDC Vacuum Products, LLOC Nor-Cal Products, Inc. Omicron Nanotechnology USA Plasmaterials, Inc. Plasma-Therm Prevac sp. z o.o. PVD Products RBD Instruments, Inc. RF VII Inc. Rocky Mountain Vacuum Tech., Inc. SPECS Surface Nano Analysis, Inc. Super Conductor Materials Sycon Instruments, Inc. Ted Pella, Inc. Telemark Thermionics Vacuum Products VG Scienta
BOOTH 529 413 311 635 727 607 519 617 200 524 529 210 627 203 214 901 322 718 905 314 614 416 612 716 317 325 611 622 218 717 523
TOF SIMS INSTRUMENTS Hiden Analytical, Inc. ION-TOF USA Physical Electronics SPECS Surface Nano Analysis, Inc.
617 401 501 317
TUBING/PIPING/BELLOWS ASSEMBLIES A&N Corporation Atlas Technologies BellowsTech, LLC Duniway Stockroom Corp Ebara Technologies Lam Research MDC Vacuum Products, LLOC MEWASA North America, Inc. MKS Instruments Nor-Cal Products, Inc. Omley Industries, Inc. Scientific Instrument Services, Inc. Thermionics Vacuum Products Vacuum Research Corp. UV VIS Shimadzu Scientific Instruments VACUUM SYSTEM ACCESSORIES A&N Corporation Agilent Technologies Atlas Technologies BellowsTech, LLC Brooks Automation Capitol Vacuum CeramTec North America COSMOTEC Corporation Duniway Stockroom Corp Ebara Technologies Edwards Vacuum Extrel CMS Friatec N.A. LLC Glas-Col HeatWave Labs Inc. Hiden Analytical, Inc. Hine Automation Inland Vacuum Industries, Inc. Instrutech, Inc. Julabo USA, Inc. Kemstream Kimball Physics Inc. Kurdex Corporation Kurt J Lesker Company Labtec Sales Partners LLC Lam Research McAllister Technical Services MDC Vacuum Products, LLOC MEWASA North America, Inc. MKS Instruments Nor-Cal Products, Inc. Omley Industries, Inc.
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BOOTH 510 517 506 423 422 732 214 316 534 901 537 427 717 300 301 510 323 517 506 424 522 727 903 423 422 513 411 519 633 213 617 200 330 211 623 529 201 210 601 627 732 615 214 316 534 901 537 Continued
PRODUCT LOCATOR VACUUM SYSTEM ACCESSORIES (CONTINUED) BOOTH Pfeiffer Vacuum Technology, Inc. 609 PHPK Technologies 431 Precision Plus Vacuum Parts 616 Prevac sp. z o.o. 314 PVD Products 614 R.D. Mathis Company 318 RBD Instruments, Inc. 416 RF VII Inc. 612 RHK Technology Inc. 405 Rocky Mountain Vacuum Tech., Inc. 716 SAES Getters USA 329 Scientific Instrument Services, Inc. 427 Semicore Equipment, Inc. 709 Solid Sealing Technology, Inc. 327 SPI Supplies 438 Staib Instruments 723 Sycon Instruments, Inc. 611 Synergy Vacuum, Inc. 441 Ted Pella, Inc. 622 Thermionics Vacuum Products 717 Transfer Engineering & Manufacturing, Inc. 624 UC Components 610 Vacuubrand, Inc. 535 Vacuum Research Corp. 300 VAT 428 VG Scienta 523 Yugyokuen Ceramics Co., Ltd. 215 VACUUM SYSTEM REPLACEMENT PARTS Agilent Technologies Atlas Technologies BellowsTech, LLC Brooks Automation Capitol Vacuum CeramTec North America COSMOTEC Corporation Ebara Technologies Edwards Vacuum Extrel CMS Friatec N.A. LLC HeatWave Labs Inc. Hine Automation Kurdex Corporation Labtec Sales Partners LLC MDC Vacuum Products, LLOC MEWASA North America, Inc. Nor-Cal Products, Inc. Precision Plus Vacuum Parts Prevac sp. z o.o. RBD Instruments, Inc.
323 517 506 424 522 727 903 422 513 411 519 213 200 210 627 214 316 901 616 314 416
VACUUM SYSTEM REPLACEMENT PARTS CONTINUED BOOTH RF VII Inc. 612 Scientific Instrument Services, Inc. 427 Synergy Vacuum, Inc. 441 Ted Pella, Inc. 622 Transfer Engineering & Manufacturing, Inc. 624 UC Components 610 VAT 428 VALVES A&N Corporation Agilent Technologies Duniway Stockroom Corp Ebara Technologies Hiden Analytical, Inc. Kemstream Kurt J Lesker Company Lam Research McAllister Technical Services MDC Vacuum Products, LLOC MKS Instruments Nor-Cal Products, Inc. Pfeiffer Vacuum Technology, Inc. PHPK Technologies Precision Plus Vacuum Parts Scientific Instrument Services, Inc. Ted Pella, Inc. Thermionics Vacuum Products Vacuum Research Corp. VAT VG Scienta
510 323 423 422 617 529 601 732 615 214 534 901 609 431 616 427 622 717 300 428 523
X-RAY PHOTOELECTRON SPECTROMETERS CeramTec North America Friatec N.A. LLC Kratos Analytical Omicron Nanotechnology USA Physical Electronics Prevac sp. z o.o. RBD Instruments, Inc. SPECS Surface Nano Analysis, Inc. Thermo Scientific VG Scienta
727 519 301 322 501 314 416 317 417 523
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EXHIBITOR PROFILES A&N Corporation 510 707 SW 19th Avenue Williston, FL 32696 Phone: 352-528-4100 www.ancorp.com A&N Corporation, manufacturer of high vacuum components for over 40 years, offers researchers and laboratories an extensive line of standard high and ultra high vacuum components, as well as custom valves and process chambers. A&N products are designed to meet or exceed the standards required by industrial and academic users, such as those involved with thin film deposition, surface analysis, laser devices, cryogenics and the aerospace industry. For more information, visit us at www.ancorp.com. Accu-Glass Products Inc. 502 700 Arroyo Avenue San Fernando, CA 91340 Phone: 818-365-4215 www.accuglassproducts.com Designs, engineers, and manufactures a wide range of ultrahigh vacuum subminiature-D electrical feedthroughs with air and UHV compatible connector fitted cable assemblies. The product range includes 9, 15, 25, and 50 pin instrumentation, power, coaxial, and thermocouple-power contact combinations. The product range has been expanded to include: 9-pin circular subminiature-C electrical feedthrough mounted on a MINI CF flange, viewports, bellows sealed rotary feedthroughs, and bellows sealed linear feedthroughs. We maintain a large inventory of standard components for off the shelf delivery. Minor modifications of standard components, and custom engineered products are also available with quick delivery. Advanced Chemical Company 515 105 Bellows Street Warwick, RI 02888 Phone: 401-785-3434 • www.advchem.com Incorporated in 1972, we are a family owned and operated ISO-9001:2008, ISO-14001-2004, ITAR Certified full service precious metals refinery. We refine gold, silver, platinum, palladium and rhodium in our 25,000 square foot, state-of-the-art and environmentally safe refinery. Our refinery handles most hazardous and non-hazardous precious metal bearing material for customers from a wide array of industries. We are also a leading manufacturer of proprietary precious metal electroplating chemistries and other specialty chemistries. Our Laboratory services include assaying, element identification and product support.
Agilent Technologies 323 Vacuum Products Division 121 Hartwell Avenue Lexington, MA 02421 Phone: 781-860-5489 www.agilent.com/chem/vacuum Agilent Technologies, Vacuum Products Divsion (formerly Varian, Inc.) is a world leader providing total vacuum solutions for science and industry for over sixty years. And we provide dry vacuum from the ground up, from rough vacuum to UHV, as well as the vacuum measurement instrumentation and leak detection you need to stay up and running. Agilent offers a complete vacuum solution for any application. Product lines include: Ion pumps, turbomolecular pumps, dry roughing pumps, gauging, hardware, leak detectors, and custom pumping systems. Agilent also offers a variety of training courses to suit the need and expertise level of all vacuum users. Visit us at Booth #323 to see our new TwisTorr 304 FS turbomolecular pump. AJA International, Inc. 308 P.O. Box 246 North Scituate, MA 02060 Phone: 781-545-7365 www.ajaint.com Sputtering and E-beam Systems for R&D Pilot Production. Static and Rotating Magnetron Sputter Sources for HV and UHV, Substrate Holders with Rotation, RF Biasing, Heating and Cooling; Sputter Targets, Microwave, RF and DC Power Supplies, Microwave Components and Plasma Sources, RF Ion/Plasma Sources. Alicat Scientific, Inc. 217 7641 North Business Park Drive Tucson, AZ 85743 Phone: 520-290-6060 www.alicatscientific.com Alicat Scientific is a leading manufacturer of flow and pressure instrumentation. Alicat has application experience in areas of fuel cell, semiconductor fab, vacuum coating, pressure delivery and secondary calibration standards. By leveraging strengths, experience and customer feedback Alicat has been successful in creating a versatile line of instrumentation that enables customers to extract additional benefit and cost savings from existing processes. Alicat Scientific is an ISO 9001:2000 registered company.
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EXHIBITOR PROFILES American Institute of Physics 326 2 Huntington Quadrangle Suite 1NO1 Melville, NY 11747 Phone: 516-576-2279 www.aip.org The American Institute of Physics (AIP) is one of the world's largest publishers of physics information. AIP publishes 15 journals, including Applied Physics Letters and Journal of Applied Physics, the #1 and #2 most highly cited journals in their field; AIP Advances, a community-led, open access journal covering applied physical science; two magazines, including its flagship publication Physics Today; and the AIP Conference Proceedings series. Stop by booth 326 to learn what's new at AIP Publishing and for your chance to win a new iPad. Anasys Instruments 531 121 Gray Avenue Suite 100 Santa Barbara, CA 93101 Phone: 805-730-3310 www.anasysinstruments.com Anasys Instruments designs breakthrough, award-winning products that measure nanoscale material properties while providing high quality AFM imaging. Since 2005, Anasys has developed and introduced three major award-winning technologies: nanoscale thermal analysis (nanoTA™), nanoscale IR measurement (nanoIR™), and AFM+ Thermal analsys (afm+™). The afm+ system is an AFM platform which offers three important analytical capabilities-thermal probe technology (nanoTA), Scanning Thermal Microscopy and Transition temperature microscopy capabilities. Anasys is proud to introduce Lorentz Contact Resonance which pioneers the field of wideband nanoscale dynamic mechanical spectroscopy. Contact us at 805-730-3310 or online at www.anasysinstruments.com Angstrom Scientific Inc 638 120 North Central Avenue Suite 3 Ramsey, NJ 07446 Phone: 201-962-7222 • www.angstrom.us Angstrom Scientific is the East Coast Representative for the Jordan Valley QC3 and D1 X-Ray Diffractometers. Angstrom is pleased to announce that it now represents the following companies: - Protochips: featuring the ADURO which allows for insitu high temp microscopy up to 1200deg C The new Hitachi TM3000 Tabletop SEM is now available from Angstrom Scientific. Providing measurement and control of critical processes at the nanoscale level.
Annealsys 529 Rue de la Vieille Poste PIT de la Pompignane Batiment T2 Montpellier, 34055 France Phone: 33-467-202-363 www.annealsys.com Annealsys manufactures Rapid Thermal Processing and Chemical Vapor Deposition systems. RTP systems with cold wall chamber, high temperature lamp furnace (1500°C) and high vacuum capability from 3-inch to 200 mm for RTP and RTCVD processes. MOCVD systems with direct liquid injection vaporizers for deposition of metals, oxides, nitrides, III-V and II-VI materials. 2-inch system with in-situ annealing capability for MOCVD and spray pyrolysis. LPCVD batch furnace for 4-inch wafers. Annealsys provides worldwide sales and service. Applied Surface Technologies 312 15 Hawthorne Drive New Providence, NJ 07974 Phone: 908-464-6675 www.co2clean.com The CO2 Snow Jet Cleaning System will be demonstrated. The cleaning process is simple, removing particles of all sizes (to below 0.03microns) and also organic residues from surfaces. This cleaning process works well on many substrates, vacuum parts, analytical samples (AFM, XPS), optics, and many other applications. The Snow Jet process is, nondestructively, residue-free with no environmental limitations. Bring test samples! Association of Vacuum Equipment Manufacturers AVEM 332 201 Park Washington Court Falls Church, VA 22046 Phone: 703-538-3542 www.avem.org Founded in 1969, AVEM is a non-profit association of companies that manufacture vacuum equipment and supplies. It promotes member interests and provides services to enhance membership value and understanding of the global market. Visit the AVEM booth for information on products made by our members and to learn how you can join and network with your manufacturing colleagues.
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EXHIBITOR PROFILES Asylum Research 410 6310 Hollister Ave. Santa Barbara, CA 93117 Phone: 805-696-6466 • www.asylumresearch.com Asylum Research is the technology leader for atomic force and scanning probe microscopy (AFM/SPM) for materials and bioscience applications. Asylum's product line comprises the versatile MFP-3D™ AFM/SPM family– the most robust AFM with the widest range of capabilities and many advanced built-in modes for many applications including thin films, force measurements, PFM, nanoindenting, cells/single molecules/biomaterials, nanomechanical measurements, energy research, polymers, and more. Our Cypher™ AFM is the world's fastest and highest resolution AFM with atomic point defect resolution and the most accurate measurements possible, >10X faster AC imaging with small cantilevers and many ease of use features such as SpotOn™ laser & photodiode alignment. Asylum offers the lowest cost of ownership with our exclusive FIVE YEAR WARRANTY and six-month money back guarantee. Join us for a demonstration of our new imaging AM-FM technique that enables quantitative nanomechanical measurements. Atlas Technologies 517 305 Glen Cove Road Port Townsend, WA 98368 Phone: 360-385-3123 • www.atlasuhv.com Atlas Technologies is the world leader in aluminum vacuum. Aluminum chambers and components offer so many advantages over stainless in UHV that Atlas develops aluminum vacuum products that replace nearly every conceivable stainless component. These products have been used on tens of thousands of UHV, semiconductor, particle physics, and cryogenic applications worldwide. Atlas also has core strength in dissimilar metal bonding and provides UHV certified bimetallic components to demanding applications from cryogenics to nuclear medicine. AVS ASK THE EXPERTS - VAC TECH DIV. 528 www.avs.org/forum.aspx Have Questions? We have answers! The Vacuum Technology Division is pleased to host Ask the Experts at booth 528. Bring us your problems with vacuum system specifications, troubleshooting, process control, contamination, and we’ll do our best to point you to a good solution. Ask the Experts is an, unbiased, open forum with the resources to discuss and help solve vacuum related issues. Sponsored by Duniway Stockroom, Brooks Automation and SAES Getters.
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EXHIBITOR PROFILES AVS ART ZONE & CONTEST 222 Often members of the AVS community use scientific images to convey information—sometimes these images contain aesthetic qualities that evoke a personal, intellectual, emotional, or spiritual response transforming them into objects of art. The question then is where does the science end and the art begin? Let your fellow colleagues be the judge or your artistic interpretations of science as art. Stop by to cast your vote for your favorite images. First Place: $500 !!! AVS CAREER CENTER 733 Make the right connections at AVS. Visit the career center to post job openings or search available positions. The AVS Career Center provides the opportunity for attendees and exhibitors to find a perfect fit within a specific field of expertise. Private interview rooms are available. AVS MEMBERSHIP BOOTH 733 Take charge of your professional career by becoming a member of the AVS. Your AVS membership entitles you to a range of professional and personal opportunities. Find out more by stopping by the Membership booth during the symposium. The booth will also offer an array of AVS offerings including Educational Material, Logo and Novelty Items. AVS RAFFLE ZONE 733 Daily raffle prize tickets can be found in your registration kit. Drop your tickets off each exhibit day for a chance to win GREAT prizes!! AVS E-MAIL PAVILION 223 Keep in touch with the outside world. Check your email, flights, print boarding passes, etc. Generously sponsored by SPECS Surface Nano Analysis, Inc. AVS EXHIBITOR TECHNOLOGY SESSIONS 701 Exhibitors will introduce new products, services and applications during brief 20 minute presentations. Sessions are scheduled during all technical session breaks. Come early and receive an AVS-59 souvenir!
AVS FOOSBALL TOURNAMENT 722 Sponsored and Hosted by Gamma Vacuum. Sign up as soon as the exhibit hall opens on Tuesday. Limited space. Great Prizes to be won !!! AVS FUTURE SITES 341 AVS-60 (2013) will take place in Long Beach, California. Stop by booth 341 for information and goodies! AVS HISTORY BOOTH 539 One of the earliest examples of the quantum theory and wave-particle duality is the observations by Clinton Davisson and Lester Germer of Low Energy Electron Diffraction (LEED) experimentally at Bell Labs in 1927. They used a glass ultra-high vacuum chamber (called a "tube") and fired low-energy electrons at a crystalline nickel target and observed that the angular dependence of the intensity of backscattered electrons showed diffraction patterns. These observations were consistent with the diffraction theory for X-rays developed by Bragg and Laue earlier. Davisson and Germer published notes of their electron diffraction experiment result in Nature and in Physical Review in 1927. The History booth will display a photograph of the original apparatus and it will also have an example of a modern post acceleration detection method which was introduced in the early 1960's at AVS meetings. Using this technique diffracted electrons are accelerated to high energies to produce clear and visible diffraction patterns on a fluorescent screen. Other details of the early use of LEED at several AVS meetings will be presented in a poster and in a notebook of modern examples. AVS PUBLICATIONS 728 JVST A, JVST B, SSS and Biointerphases will feature recent journal highlights, “Meet the Editors”, iAVS, and details on upcoming JVST special issues: Energy Frontiers; Graphene and Related Materials.
AVS - SPECIAL EVENTS BOOTH 333 FREE Caricatures and Massages! Caricature artists and Massage Therapists will be available during all Exhibit hours. You will find your tickets in your registration kit. Tickets must be validated at Booths 301 & 300. Generously sponsored by Kratos Analytical and Vacuum Research Corp.
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EXHIBITOR PROFILES BellowsTech, LLC 506 1289 N. US Hwy 1 Suite #1 • Ormond Beach, FL 32174 Phone: 386-615-7530 • www.bellowstech.com Ultra high vacuum edge welded bellows are able to withstand high vacuum applications with low leak rates to ensure a hermetic seal. Edge welded metal bellows provide the most flex in one or more directions within the smallest amount of space of any bellows technology on the market by reaching a 90% stroke length, and are flexible in design to accommodate round, oval and rectangular shapes. OD’s range from 0.358 to 26 inch (9.09 to 660 mm). Lifter bellows can be customized to the size and shape required of new design or retrofit applications. BellowsTech high vacuum bellows can be configured with a variety of end pieces including end plates for welding, CF flanges, KF flanges, ISO flanges as well as custom designs. To learn about edge welded bellows technology and BellowsTech edge welded metal bellows, visit www.bellowstech.com. Beneq 413 P.O. Box 262 • Vantaa, 01511 • Finland Phone: +358 9 7599530 • www.beneq.com Equipment for industrial and research use for functional coatings based on Atomic Layer Deposition (ALD) and proprietary nHALO® and nAERO™ aerosol deposition technology. Beneq ALD Thin Film Systems are for depositing oxides, nitrides, metals, plastics and biocompatible materials. Applications for optical, tribological, passivation and primer layer high precision (< 1%) coatings for complex 3D-products. nHALO® applications for coatings on glass and ceramics and nanoparticle synthesis. BJA Magnetics 714 17 Moore Street • Leominster, MA 01453-1503 Phone: 978-514-9919 • www.bjamagnetics.com Your SMART-LINK to a long term, secure Permanent Magnet supply chain. BJA Magnetics has the solutions to all of your permanent magnet and magnetic assembly requirements! We offer design and engineering assistance from the earliest stages of application design to the completion of the final product. Our extensive range of magnetic materials, coatings, sizes, and shapes permit us to meet your precise needs, and our available assortment of magnetizing and testing fixtures provide the ability to do on-site evaluation and magnetizing – at our location or yours! We have developed a Holmium-Cobalt substitute to Dysprosium for high temperature capability NdFeB magnets. Using this lower cost, stable supply element combination BJA can provide ongoing strategic supply of high temperature magnets.
Brooks Automation 424 15 Elizabeth Drive Chelmsford, MA 01824 Phone: 978-262-2400 • www.brooks.com Brooks is a leading worldwide provider of automation, vacuum and instrumentation solutions for multiple markets including semiconductor manufacturing, life sciences, and clean energy. Our technologies, engineering competencies and global service capabilities provide customers speed to market, and ensure high uptime and rapid response, which equate to superior value in their mission-critical controlled environments. Since 1978, we have been a leading partner to the global semiconductor manufacturing market and through product development initiatives and strategic business acquisitions; we have expanded our reach to meet the needs of customers in the life sciences industry, analytical & research markets and clean energy solutions. Brooks is headquartered in Chelmsford, MA, with direct operations in North America, Europe and Asia. For more information, please visit www.brooks.com. Bruker AXS, Inc. 311 5465 East Cheryl Parkway Madison, WI 53711-5373 Phone: 608-276-3000 • www.bruker-axs.com Bruker AXS designs and manufactures analytical instrumentation for elemental analysis, materials research, structural and surface investigations. Our innovative solutions enable a wide range of customers in heavy industry, chemistry, pharmacy, ophthalmic, semiconductor, solar, life science, nanotechnology, and academic research to make technological advancements and to accelerate their progress. Innovation with Integrity. www.bruker-axs.com. Bruker Corporation 311 112 Robin Hill Rd. Santa Barbara, CA 93117 Phone: 805-967-2700 • www.bruker-axs.com Bruker's high-performance metrology solutions encompass a wide range of technologies and techniques, including stylus profilers, confocal microscopes, and interferometric optical profilers. Each provides subnanometer vertical resolution for rapid, accurate, surface measurements. The world-renowned Dektak Stylus Profilers have a proven history of superior measurement film thicknesses, stress, and surface topography to accurately quantify the quality of deposited films. Innovation with Integrity. www.bruker-axs.com
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EXHIBITOR PROFILES Bruker Optics, Inc. 311 19 Fortune Drive Billerica, MA 01821 Phone: 978-439-9899 • www.brukeroptics.com Bruker Optics, part of the Bruker Corporation, is the leading manufacturer and worldwide supplier of Fourier Transform Infrared, Near Infrared and Raman spectrometers for various industries and applications Cambridge NanoTech, Inc. 635 One Kendall Square Suite B7301 Cambridge, MA 02139 Phone: 617-674-8800 www.cambridgenanotech.com/ Cambridge NanoTech Inc., a leader in Atomic Layer Deposition solutions, delivers economical ALD systems that are capable of depositing ultra-thin films used in research and industrial applications. The Phoenix™ and Tahiti™, our manufacturing systems, are used in the production of semiconductors, flat panel displays, photovoltaics and solid state lighting. The Savannah™ and Fiji™, our research systems, are used by worldclass scientists to study ALD film properties such as electrical, anti-bacterial, UV blocking and anti-reflection. CAMECA Instruments, Inc. 435 5500 Nobel Dr. Suite 100 Madison, WI 53711 Phone: 608-274-6880 • www.cameca.com CAMECA designs/manufactures advanced SIMS, LEAP, EX-300 & EPMA characterization tools. IMS-7f SIMS & LEAP 4000X Atom-Probe are well suited for PV/LED process characterization (profiling, diffusion, contamination, trace-elements). Our SIMS lead the world for semiconductor characterization - Lab & nearFAB, while NanoSIMS-50L provides high performance MEMS characterization thanks to high lateral & mass resolution, simultaneous with high sensitivity. Our newgeneration EX-300 LEXES Fab is now the fast, accurate non-destructive in-Fab method for shallow-dose, thickness and compositional measurements. Join us at booth 435, Wednesday, 3PM for The CAMECA LEAP 4000TM Tutorial: Tutorial will cover the basics of atom probe tomography, the recent expansion into a wide range of applications including light emitting diodes, microelectronics, solar cells, geology, cosmology. biology, & examples of complementary correlative techniques such as TEM & EPMA. Wednesday Tutorial 3 PM at booth 435.
Capitol Vacuum 522 13897 Willard Road Chantilly, VA 20151 Phone: 703-631-3933 www.capvac.com Capitol Vacuum is the leading independent supplier of high quality parts and repair kits for industrial vacuum pumps. We carry spare parts, repair kits, fluids and filters for pumps manufactured by most major OEMs and offer same day shipping on most orders. We stock parts for dry scroll, dry claw, rotary vane, rotary piston, blower or booster pumps, cryopumps and offer turbomolecular pump repair and parts. When you’re looking for quality parts and quick delivery shop on-line at WWW.CAPVAC.COM. For technical advise or parts information, please call: 1-800-237-3933. Carl Zeiss Microscopy, LLC 525 One Zeiss Drive Thornwood, NY 10594 Phone: 800-233-2343 www.zeiss.com/microscopy Carl Zeiss is a leading provider of light, electron and ion beam microscopes and imaging solutions for industry. Its light microscope product line includes routine microscopes, stereomicroscopes, research microscopes, digital cameras, confocal systems and software solutions. The ZEISS charged particle systems span from SEMs, FESEMs, energy filtering TEMs and FIB workstations along with the newly invented helium ion microscopes. We provide industrial solutions such as particle analysis, polarization, surface topography, metallography, 2D/3D metrology, semiconductor technology, R&D applications, quality assurance and failure analysis.
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EXHIBITOR PROFILES CeramTec North America 727 One Technology Place Laurens, SC 29360 Phone: 864-682-3215 • www.ceramtecna.com CeramTec North America is an important part of a successful global organization with a rich history producing a diverse range of ceramic products, ceramic materials, and hermetically sealed products. CeramTec is the world leader in ultra-high vacuum seal technologies (glass seals, glass ceramic seals, ceramic to metal seals, and metal to metal joining). CeramTec’s Ceramaseal® products are built to endure extreme conditions, whether it is an ultra-high vacuum (UHV) environment, temperatures ranging from cryogenic (4 K) to 450°C, pressures in excess of 25,000 psig, corrosive or caustic environments, while maintaining an unsurpassed level of reliability and performance. Having pioneered the science of ceramic-to-metal sealing 60 years ago, CeramTec continues to provide innovative solutions for current and future challenges in the marketplace. CeramTec is more than a component manufacturer—CeramTec is a solutions provider and development partner. ISO 9001:2008 COSMOTEC Corporation 903 6th Floor, 4-3-4 Nihonbashi-Honcho Chuo-ku Tokyo, 130-0023 Japan Phone: 81-3-3270-5761 www.cosmotec-co.jp COSMOTEC Corporation has designed and manufactured vacuum components since its establishment in 1992. It also is a specialized trading company that has agency contract with well-known company Kyocera. Kyocera is one of the largest ceramic companies in the world and it has a wide variety of products. Standard catalog products: Coaxial BNC, MHV, SHV, SMA, N, compact LEMO with double ended grounded shield and double ended floating shield available Compact and high density multipin Up to 48 pins in 2.75 CF or 40 KF Compact and high density thermocouple Up to 24 pairs in 2.75 CF or 40 KF Compact and high voltage high current Up to 100 kV 800 A Isolators With Swagelok®, VCR®, KF, CF, ISO and ASA flanges Accessories Insulators, socket contacts, in-vacuum cables We strongly guarantee your success!
CVD EQUIPMENT CORPORATION 607 355 SOUTH TECHNOLOGY DRIVE CENTRAL ISLIP, NY 11722 PHONE: 631-981-7081 WWW.CVDEQUIPMENT.COM Our customizable EasyTube® CVD process development platforms are used to synthesize 1D, 2D and 3D nano materials and films. The EasyGas™ delivery systems are used for inert, flammable, corrosive and/or toxic gases delivery and our EasyExhaust™ abatement equipment, using a pyrolizer, packed tower wet scrubber, or both, are used for exhaust gas treatment. Together these systems are being used by researchers worldwide to advance the state-of-the-art in the materials field and to develop related innovative applications and products. Our First Nano division has the largest worldwide installed base of turn-key CVD research systems. Our Application Laboratory focuses on accelerating the commercialization of tomorrow’s technologies in the Nano/Solar/Energy generation and Energy storage fields and our CVD division focuses on design and manufacturing of custom pilot and scale-up production systems. www.cvdequipment.com, www.firstnano.com, www.cvdmaterialscorporation.com, www.stainlessdesign.com DENTON VACUUM LLC 715 1259 N. CHURCH STREET MOORESTOWN, NJ 08057 PHONE: 856-439-9100 WWW.DENTONVACUUM.COM Denton Vacuum practically invented the science of sample preparation for electron microscopy. Today our full range of products deliver sputtering and thermal evaporation solutions that are fast, accurate and reliable. Our products for SEM and TEM sample preparation utilize sputtering and thermal evaporation to enable unique, high resolution imagery.
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EXHIBITOR PROFILES Duniway Stockroom Corp 423 1305 Space Park Way Mountain View, CA 94043 Phone: 650-969-8811 www.duniway.com Duniway Stockroom specializes in vacuum equipment and supplies; ion pumps and controls; flanges, gaskets, bolts and nuts; vacuum gauges and controls; mechanical pumps and rebuild kits; supplies (oils, greases, hoses, bell jars) diffusion pumps and leak detectors. Equipment rebuilding services and a variety of reconditioned equipment. Free Catalog. Eagle Instrument Services 409 420 Roberts Ave Ste 1 Louisville, KY 40214 Phone: 502-380-0990 www.eaglevac.com Eagle is dedicated to exceptional customer service delivered with genuine care to every customer. We offer quality repair services for turbomolecular pumps, mechanical pumps, diffusion and diaphragm pumps. A variety of pumps are available as loaners and/or exchanges to fit our customer’s needs. Turbo Repair Kits and Refurbished equipment are available. All work and equipment include a One Year New Parts Warranty Ebara Technologies 422 51 Main Avenue Sacramento, CA 95838 Phone: 916-920-5451 www.ebaratech.com EBARA Technologies, Inc. is a global innovator/local provider of vacuum pumps and advanced exhaust management solutions for semiconductor, photovoltaic, thin films and R&D. EBARA's products are backed by a superior global service network. EBARA continues to expand its role by bringing to the market: Dry Vacuum Pumps, Turbomolecular Pumps, Point-of-Use Abatement and EBARAClean -Outsourced Parts Cleaning Services. EBARA Technologies, Inc. also services all brands or dry and wet pumps.
Edwards Vacuum 513 6416 Inducon Drive West Sanborn, NY 14132 Phone: 800-848-9800 www.edwardsvacuum.com Edwards is a world leader in the manufacture and supply of vacuum and abatement solutions serving the most advanced industries including; scientific, solar, semiconductor, LED, pharmaceutical and metallurgical sector. Edwards offers innovative products, first class service, a single source of technological expertise and customized systems for the vacuum technology and semiconductor industries. Our products include vacuum pumps, instrumentation and components for the scientific instrument, R&D, lens coating, industrial & chemical processing industries. Elsevier (NY) 540 360 Park Avenue South New York, NY 10010 Phone: 212-633-3758 • www.elsevier.com Come and visit the Elsevier booth... Browse through the latest books and journals in the field of materials science and physics and take advantage of special discounts available to attendees. Pick up your free samples of leading journals such as Materials Today, Surface Science, Thin Solid Films and Vacuum. ESI 205 32605 West 12 Mile Road Suite 350 Farmington Hills, MI 48334 Phone: 248-381-8040 • www.esi-group.com ESI, the leading provider of virtual prototyping solutions, offers engineering simulation solutions to model complex multiphysics processes for practically any type of reactor. ACE+, our flagship CFD multiphysics solution, combines plasma chemistry and transport with electromagnetic in an integrated environment to analyze the effects of key parameters on the speed and quality of etching, deposition and electroplating. Through the understanding of characteristics such as thermal uniformity, aspects ratios and complex electrochemistry, engineers can assess the scalability of processes and determine the impact of each process step. CFD-TOPO accurately captures the combined effects of chemical species transport and surface reaction in gas-solid interfaces to assess 3D shape evolution created by thin film deposition and etching of the wafer surface. These simulation capabilities allow for significantly reduced efforts in physical testing, resulting in shorter lead times and lower costs.
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EXHIBITOR PROFILES Extrel CMS 411 575 Epsilon Drive Pittsburgh, PA 15238 Phone: 412-967-5738 • www.extrel.com Extrel is the world’s leading manufacturer of Research and Process Mass Spectrometers, Residual Gas Analyzers (RGA’s), Quadrupole Mass Spectrometry Systems and Components. We have been providing quadrupole mass spectrometry solutions to our Research and Industrial customers for over 45 years. Our instruments are known for their high performance, reliability and flexibility. We offer equipment for Basic Research, QA/QC Laboratories, Process Development and Process Control. Extrel’s global customers receive the most comprehensive application, technical and onsite support in the industry. FEI Company 726 5350 NE Dawson Creek Drive Hillsboro, OR 97124 Phone: 503-726-7500 • www.fei.com FEI's micro-imaging innovation brings the widest range of electron, ion and digital light microscopy instrument and application expertise in the industry to customers worldwide. Whether seeking to make breakthrough discoveries, accelerate time to market or achieve competitive advantage, customers find their answers with FEI. Leading the world in thermal field emission sources, liquid metal ion sources and UHV FIB/SEM columns, FEI Component Products deliver cutting-edge performance. Friatec N.A. LLC 519 11108 Challenger Ave. #101 Odessa, FL 33556 Phone: 727-753-0880 • www.friatecna.net FRIALIT®-DEGUSSIT® oxide ceramics are used throughout the world in electronic and electrical engineering applications. Metallized oxide ceramics are the basis for applications in extreme environment applied physics. Through discussions with FRIALIT-DEGUSSIT's engineers, help our customers develop products that specifically meet their needs in all high technology fields. The results are metal-ceramic components that satisfy unique requirements. These products, when used at extreme temperatures, voltages and vacuum, retain their functionality thanks to the oxide ceramic properties.
Gamma Vacuum 724 2915 133rd Street West Skakopee, MN 55379 Phone: 952-445-4841 www.gammavacuum.com Gamma Vacuum manufactures UHV products including ion and titanium sublimation pumps and controllers. Glas-Col 633 711 Hulman Street PO Box 2128 Terre Haute, IN 47802-0128 Phone: 812-235-6167 www.glascol.com With the same emphasis on quality and innovation that led Glas-Col to virtually creating the laboratory heating industry the company now offers an extensive line of heating and insulating jackets for the industrial market. Glas-Col is known worldwide for the ability to custom design jackets and controls for many market segments. Glas-Col heating jackets offer a convenient cost effective way to heat and maintain temperature up to 600C. Helping to reduce buildup in fore-lines, exhaust lines and pump lines, which in turn reduces the risk of damage to product and equipment. In addition they, provide clean even heat, eliminate hot or cold spots, are easy to install and remove, require low maintenance and labor cost, are energy efficient, are clean room compatible, are made of durable material, offer variable watt densities, provide multiple heating zones, are chemical and moisture resistant and are easily adaptable to even the most complex applications. HeatWave Labs Inc. 213 195 Aviation Way Suite 100 Watsonville, CA 95076-2069 Phone: 831-722-9081 www.cathode.com HeatWave Labs specializes in the vacuum tube and vacuum equipment industries. Our expertise includes thermionic cathodes and ion emitters and guns, Ion Sources and ionizers, Ion pumps and controllers, vacuum tube design, processing, specialized refractory materials, UHV sample heating and filament products, temperature controllers and related products.
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EXHIBITOR PROFILES Heidelberg Instruments, Inc. 636 2807 Oregon Court Unit E2 Torrance, CA 90503 Phone: 310-212-5071 www.hmt.de With an installation base in over 30 countries, Heidelberg Instruments is a world leader in production of high precision maskless lithography systems. These systems are used for direct writing and photomask production by some of the most prestigious universities and industry leaders in the areas of MEMS, BioMEMS, Nano Technology, ASICS, TFT, Plasma Displays, Micro Optics, and many other related applications. Hiden Analytical, Inc. 617 37699 Schoolcraft Road Livonia, MI 48150 Phone: 734-542-6666 www.hidenanalytical.com Hiden Analytical manufactures an extensive range of high performance quadrupole mass spectrometers for plasma characterization studies, surface science applications, precision gas analysis and vacuum diagnostics. Showcasing the QGA, our fast response, capillary inlet system for process gas analysis, bio-gas and fermentation monitoring, catalysis studies, TGA and reaction kinetics. Hiden Analytical extends the pressure range for plasma monitoring with our HPR60-EQP Atmospheric Plasma Monitor. The HPR60-EQP is configured specifically for measurement of atmospheric and near-atmospheric plasma and reactive processes in applications including analysis of atmospheric plasma jets (APD), dielectric barrier discharges (DBD) and flame chemistry. Also showcasing MAXIM, a high-performance quadrupole secondary ion monitor for SIMS and SNMS - specifically designed for optimum sensitivity in surface analysis and depth profiling applications. Visit us at www.HidenAnalytical.com or call 1-888 96 HIDEN
Hine Automation 200 11930 Racetrack Road • Tampa, FL 33626 Phone: 813-749-7519 • www.hineautomation.com Hine Automation designs, manufactures and sells vacuum automation systems and robotic components. We serve the Original Equipment Manufacturers (OEMs) in the semiconductor, solar, flat panel display and related industries around the world where cost of ownership is an important factor. The quality and reliability of our robotic components satisfy a wide range of needs; from the most flexible research and development environment to the most stringent manufacturing environment. Our vacuum automation systems and our custom solutions combine this quality and reliability with modular and versatile designs to meet today’s automation challenges with the most functional and economical products and services. Horiba Scientific 500 3880 Park Avenue • Edison, NJ 08820-3012 Phone: 732-494-8660 • www.horiba.com/scientific HORIBA Scientific is the world-leading manufacturer of high performance spectroscopic instrumentation. We offer a wide range of products for all your Molecular, Elemental, Micro-Analysis, and Thin Film applications. Our products include Raman, FLIM and EDXRF microscopes for rapid spectroscopy and imaging measurements; steady-state and lifetime fluorometers; Photoluminescence, particle characterization, XRF, spectroscopic ellipsometry (ex-situ & in-situ,) and end point detectors, atomic emission spectroscopy, optical components, gratings and high performance CCDs, etc., and a full range of modular TCSPC components including laser diodes, timing modules, single-photon detectors and fluorescence lifetime analysis software. Our recent innovations include "what you see is what you measure" spectroscopic ellipsometry, rapid large area Raman imaging, and GD-OES products for both depth profiling and bulk analysis. Huettinger Electronic 706 111 Hyde Road Farmington, CT 06032 Phone: 860-255-6555 • www.huettinger.com HUETTINGER offers a broad range of power supplies for a variety of vacuum sputtering, etching and induction heating applications. Outputs range from 300W up to 300kW at frequencies from DC to 27.12MHz. This year HUETTINGER is introducing a new line of DC power supplies for PVD, bias, cathodic arc and HIPIMS applications.
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EXHIBITOR PROFILES Impedans Ltd. 524 Unit 8 Woodford Court Woodford Business Park Santry • Dublin, 17 Ireland Phone: 353-1-443-4882 www.impedans.com Impedans Ltd. is a leading provider of plasma diagnostic equipment for research and industry. Impedans' products are at the leading edge of plasma science and technology, assisting in the research and development of new plasma-based processes, and the optimisation and improvement of existing plasma processes and systems. Impedans' products find applications in etch, PECVD, deposition, and ion beam measurement applications. Inland Vacuum Industries, Inc. 330 35 Howard Avenue Churchville, NY 14428 Phone: 585-293-3330 www.inlandvacuum.com Inland Vacuum is pleased to introduce the new Inland geminYe PFPE inert fluid and grease product line. They are a drop-in replacement to the most popular PFPE products and all of their applications with equal performance. In addition, the geminYe products are miscible with other PFPE materials. GeminYe PFPE product line will also provide you with significant cost savings and are readily available for immediate delivery. Inland is your only vacuum fluid and grease source.
Instrutech, Inc. 211 1475 South Fordham Street Longmont, CO 80503 Phone: 303-651-0551-105 www.instrutechinc.com InstruTech’s products are microprocessor based vacuum gauge sensors, utilizing the most recent advances in vacuum gauge sensor design and associated electronic controllers. Our product portfolio of vacuum gauge sensors and vacuum gauge controllers includes convection enhanced Pirani gauges, hot cathode Bayard-Alpert and cold cathode double inverted magnetron ionization gauges. InstruTech’s vacuum measurement products are offered with built-in or rack mount controllers /displays providing pressure measurements from 4.0E-11 Torr to 1,000 Torr. Intel Corporation 738 20420 NW Von Neumann Drive MS: AG4-419 Beaverton, OR 97006 Phone: 503-456-2686 • www.intel.com/job At Intel, our vision is to create a continuum of computing experiences, which means endless opportunities with global impact for you. As an intern or recent college graduate, you will have access to unmatched manufacturing, technology, expertise and brand strength to make your mark on the exciting world of computing. Join our culture of innovation and exploration and enjoy the many perks we have to offer, all while delivering pioneering advances in hardware, software, education, energy and everything else our technology impacts. We are Intel. Sponsors of Tomorrow.
Innovative Vacuum Solutions Inc. 708 11461 N. U.S. Hwy. 301 Suite 110 Tampa, FL 33592 Phone: 813-381-3930 www.ivsonline.com Innovative Vacuum Solutions is a resourceful, maintenance firm actively servicing a variety of industries in the implementation and care of their industrial vacuum pumps. We are dedicated to customer service and can provide you with all your planning, product, maintenance and service solutions today, and in the future.
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EXHIBITOR PROFILES ION-TOF USA 401 100 Red School House Road Building A8 Chestnut Ridge, NY 10977 Phone: 845-352-8082 • www.iontof.com ION-TOF is the leading European manufacturer of Time-of-Flight Secondary Ion Mass Spectrometers (TOF-SIMS). Our TOF.SIMS 5, the most successful TOF-SIMS instrument ever, provides detailed elemental and molecular information about surfaces, thin layers, and interfaces, with full 3D characterization. It's unique design guarantees optimum performance in all fields of SIMS applications. Utilizing our new Argon Gas Cluster Ion Beam 3D characterization of organic materials is now possible. Our Qtac100 is a high sensitivity Low Energy Ion Scattering system for true atomic layer characterization. For the ultimate resolution in Magnetic Force Microscopy check out our range of NanoScan products. J.A. Woollam Co., Inc. 328 645 M Street Suite 102 Lincoln, NE 68508 Phone: 402-477-7501 www.jawoollam.com Spectroscopic ellipsometers for thin film characterization: multi-layer thicknesses, optical constants (n and k), in situ process monitoring and control, and more. New instruments extend the wavelength range to both vacuum ultraviolet and infrared (142nm to 33 microns). Offer both research-grade and high-speed metrology tools for process monitoring. Julabo USA, Inc. 623 884 Marcon Blvd. Allentown, PA 18109 Phone: 610-231-0250 www.julabo.com JULABO is a worldwide leader in liquid temperature control for Science, Research and Industry. Our products provide temperatures ranging from -95 °C to +400 °C with up to 30 kW of cooling and 36 kW of heating capacity. With fast cool down times, small footprints, and quiet operation Julabo has a solution for your liquid temperature control application.
Supe rior Pe rformance for all SIMS Applications Ultra high sensitivity for molecular species by optimized cluster ion sources Outstanding performance for low energy depth profiling Sophisticated software for ease of operation and data handling
ION-TOF USA, Inc. 100 Red Schoolhouse Road. Bldg. A . Chestnut Ridge, NY 10977 Phone 845 352 8082 . Fax 845 356 6304 .
[email protected] www.iontofusa.com
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EXHIBITOR PROFILES Kashiyama-USA Inc. 725 41432 Christy Street Fremont, CA 94538 Phone: 510-979-0070 www.kashiyama.com The Dry Screw Pump innovator provides tough, durable and reliable vacuum pumps for the semiconductor, FPD and solar panel manufacturing market. Over 150,000 sq. ft. facility & 550 employees are ISO9001-2000 & 14001 certified to ensure quality and reliability. We are specialized in harsh process where corrosive gases and/or heavy particles present, in large volume, high speed vacuuming process and high vacuum stage process in which the pumps minimize down time, energy and space efficiently. Kashiyama has dominated many years in the dry vacuum pump market. Kemstream 529 Rue de la Vieille Poste PIT de la Pompignane, Batiment T2 Montpellier, 34055 France Phone: 33-467-20-0410 • www.kemstream.com KEMSTREAM manufactures advanced vaporizers for CVD, MOCVD, ALD MLD and all gas phase processes and precursors. KEMSTREAM vaporizers are able to handle and vaporize all solid and liquid organic, inorganic and organometallic precursors including low vapour pressure, thermally labile and viscous ones. They work from vacuum to atmospheric pressure and deliver accurate, repeatable and stable vapours flows. KEMSTREAM vaporizers are either DLI (Direct Liquid Injection) Vaporizers or Sublimators. KEMSTREAM also manufactures liquid panels especially designed for feeding DLI vaporizers with air sensitive precursors and complete turnkey gas/vapour cabinets equipped with DLI vaporizers. KEMSTREAM offers standalone injection heads/atomizers for Spray Pyrolysis process. KEMSTREAM provides worldwide sales and service.
Kimball Physics Inc. 201 311 Kimball Hill Road Wilton, NH 03086 Phone: 603-878-1616 www.kimballphysics.com Compact, high access, modular UHV/HV vacuum chambers and fittings with internal/external mounting apparatus (e.g. Groove-Grabber, eV parts) enabling experimental set-ups with off-the-shelf components. Innovative electron and ion guns with matching power supplies ranging in energy from 1 eV to 100 keV, producing beams from small spots to flood beams while incorporating high performance rugged cathodes. Applications: Surface Science, Vacuum, Space and Plasma Physics, Neutralization, Cathodoluminescence, Semiconductor processing, FEL, RHEED and ESD. Features: modular optics, compact fiber-optic control, LabView, RS-232, RS-422, energy sweeping, rastering, pulsing, feedback stabilization. KP Technology 212 Burn Street Wick Caithness, KW1 5EH United Kingdom Phone: 44-1955-602777 www.kelvinprobe.com KP Technology Ltd. would like to welcome you to Booth 212 at the American Vacuum Society exhibition in Nashville, Tennessee from October 28th to November 2nd where we will be demonstrating our UHV Kelvin Probe and Ambient Scanning Kelvin Probe Systems. Professor Iain Baikie, CEO, is the inventor of the unique off-null Kelvin Probe system and has spent thirty years developing these instruments to perform the highest work function resolution measurements of any commercial device. Our systems can be used in a wide range of environments from ambient to UHV and are used in applications ranging from thin films, corrosion, or solar cells. The UHV Kelvin Probe is well suited to a range of Surface Science studies and can be used to measure absolute work function, surface photovoltage, near Fermi-level photoemission and thermionic emission operating in either single point or scanning modes (SKP).
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EXHIBITOR PROFILES Kratos Analytical 301 100 Red School House Road Building A Chestnut Ridge, NY 10977 Phone: 845-426-6700 www.kratos.com Kratos Analytical, Inc., a wholly owned subsidiary of the Shimadzu Corporation, proudly exhibits Kratos’ leading line of X-ray Photoelectron Spectroscopy (XPS) systems. Kratos offers a full range of XPS solutions, from high end, multi-technique research systems combining XPS, ISS, UPS, AES, etc., to relatively simple, highthroughput, quality control systems. Our new polyatomic ion gun now gives users the ability to sputter depth profile many organic systems previously impossible with traditional inert gas ion sputtering. Kurdex Corporation 201 343 Gibraltar Drive Sunnyvale, CA 94089 Phone: 408-734-8181 www.kurdex.com Supplier of Vacuum Deposition and Etch Systems for High Volume Production, R&D, and Pilot. Products include PVD, EVAP, PECVD, ALD, ARC Vacuum Deposition and Etch/Strip Tools. Available in In-Line, Cluster with Full Automation for any substrate size upto 2300MM. Supplying Equipment to Solar Cell, Semiconductor (Packaging), FPD, HDI, Hard Disc, Automotive, Thin Film Battery, OLED, and Lighting. Turn Key Automation. Descrete Pieces and Roll to Roll. Kurt J Lesker Company 601 1925 Route 51 PO Box 10 Clairton, PA 15025-3681 Phone: 412-387-9200 www.lesker.com We want to be your primary vacuum supplier. Kurt J. Lesker Company® is the world’s premier supplier of vacuum technology products including: pumps and oils, vacuum hardware and components, custom manufactured vacuum chambers, vacuum and thin film deposition systems, and thin film deposition materials for evaporation and sputtering. Stop by to see our UHV manipulation display, to hear about our new Isoflux cylindrical magnetron cathodes and systems, and to learn more about patent pending ALD technology and licensed pulsed cathodic arc technology.
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EXHIBITOR PROFILES Labtec Sales Partners LLC 627 735 Arlington Avenue North Suite 103 St. Petersburg, FL 33703 Phone: 727-560-1154 www.labtecsp.com A global sales and distribution partner for companies who provide equipment for microlithography and thin film processing. We can provide complete processing solutions for our customers or simple process tools that the customers can integrate into their existing processing lines. Additionally, we work with leading providers of support equipment for all our products, so we can provide our customers with all that they need to get up and running. Lam Research 732 4650 Cushing Parkway Fremont, CA 94538 Phone: 510-572-0200 www.lamrc.com Founded in 1980, Lam Research Corporation is a leading supplier of wafer fabrication equipment and services to the worldwide semiconductor industry. Lam's etch systems shape the microscopic conductive and dielectric layers into circuits that define a chip's final use and function. Headquartered in Fremont, California, Lam maintains a network of facilities throughout the United States, Asia, and Europe to meet the complex and changing needs of its global customer base.
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Visit Kratos at Booth 301 for a Nascar Driving Experience
EXHIBITOR PROFILES Mantis Deposition Ltd 203 2 Goodson Mews Wellington Street Thame, Oxfordshire OX9 3BX United Kingdom Phone: 44-1844-260-160 www.mantisdeposition.com Mantis Deposition provides high quality UHV deposition components and systems for the thin-film coating community. Instruments include; RF atom/ion sources, gas crackers, nanoparticle sources, sputter sources, mini e-beam evaporation sources. Our products are designed for MBE, surface science, PVD, and nanocoatings. Accelerated metallic nanoparticles (110nm) can be deposited adherently onto any substrate using our unique process. Complete systems are offered. McAllister Technical Services 615 West 280 Prairie Ave. Cour d'Alene, ID 83815 Phone: 208-772-9527 www.mcallister.com We have a long history of successful one-on-one collaboration with our clients. Our specialty is the design and manufacture of the UHV hardware and analyzers which you, the researchers, need. We will be exhibiting a sample of various products, including custom UHV devices such as bellows-sealed positioners, XYZ manipulators, sample heating/cooling and transfer devices, linear motion feedthroughs, PLD sample & target manipulator, differentially-pumped rotary platform, ebeam evaporator and many accessories.
McVac Manufacturing 625 6770 Old Collamer Rd. North East Syracuse, NY 13057 Phone: 315-432-9257 www.mcvac.com McVac is a leader in Thin Film Coating instruments manufacturing. Our Quartz Crystal Sensors, Feedthroughs, Cables, and related products are used widely throughout the coating industry. Our products are rapidly becoming the "standard tooling" in many production and research coating systems in facilities worldwide. Our standard products are always same day delivery, and custom variations of our standards are usually shipped within a few days. McVac also manufactures High, and Ultra High Vacuum components such as fittings, flanges, extensions, nipples, power feedthroughs, bellows, chambers, and complete vacuum systems. We do all of the precision machining, TIG welding, and helium mass spectrometer leak testing here at our modern facility. Repair and testing of vacuum equipment is also available at McVac. MDC Vacuum Products, LLOC 214 23842 Cabot Blvd Hayward, CA 94545 Phone: 510-265-3500 www.mdcvacuum.com Stocks thousands of off-the-shelf components and provides the widest range of high and ultra-high vacuum components in the industry. MDC’s product line detailed on their website, and in a catalog, consists of standard & custom chambers, flanges & fittings, valves, roughing hardware, vacuum gauge tubes, glass sapphire and quartz viewports, electrical and fluid feedthroughs, motion & manipulation instruments, thin film e-beam evaporation systems. MDC's Gas Delivery Business Unit specializes in the manufacture of complex gas delivery system assemblies, sub-assemblies and integration, UHP weldments, DOT certified cylinders and has high volume production capacity, with prototype quick-turn capability. MDC is a ISO 90210:2008 registered company.
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EXHIBITOR PROFILES MEWASA North America, Inc. 316 12841 North Bloomington Loop Oro Valley, AZ 85755 Phone: 520-797-6980 www.mewasa.com MEWASA North America, Inc. - a U.S. Corporation is a wholly owned subsidiary of MEWASA A.G. – a Swiss Manufacturer (ISO Certified 9001-2008) specifically for highest quality & reliability of precision Edge Welded Bellows, Bellows Components and Bellows Sub - Assemblies. We offer in excess of 200 standard ID / OD sizes of bellows for your specific application. We are proud of our supplier relations for 16 years to the following industries: Synchrotrons, Accelerators, Semi Conductor and related Nanotech Industries as well as Ultra High Vacuum OEM's & High Vacuum OEM's. Our core business includes: In-house design engineering (at no extra charge) and pro-active involvement in qualifying & validating our customer’s bellow specifications including axial and lateral stress testing for both static and dynamic environments. Every bellow we manufacture is guaranteed,100% leak tested and certified to 10E-9 mbar l/s. We cordially invite you to visit our booth # 316 to inspect many samples. Micromatter 629 A Div. of Advanced Applied Physics Solutions 4004 Westbrook Mall Vancouver, BC V6T 2A3 Canada Phone: 604-221-2286 www.micromatter.com MICROMATTER™ specializes in thin foil deposition technologies and manufactures specialty products for industry and scientific applications.For over 40 years, MICROMATTER™ has earned a reputation for quality. Today, leading institutions in over 50 countries use MICROMATTER™ standards to calibrate their X-ray fluorescence (XRF) systems. Our list of satisfied customers includes: •XRF equipment manufactures •Pollution monitoring agencies •Hard drive manufactures •Industrial laboratories •Auto manufactures •Universities •Museums
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EXHIBITOR PROFILES MKS Instruments 534 2 Tech Drive Suite 201 Andover, MA 01810 Phone: 978-645-5500 www.mksinst.com A global provider of instruments, components and subsystems for measuring, controlling, powering and monitoring of critical parameters in vacuum-based manufacturing environments. Products include pressure and vacuum measuring gauges; pressure control valves; vacuum components and valves; mass flow controllers; gas analysis instruments; portable helium leak detectors; RF/microwave/DC plasma generators; digital control network devices; and portable calibration systems.
Nonsequitur Technologies 538 20664 Carmen Loop #3 Bend, OR 97702 Phone: 541-312-2410 www.nonsequitur-tech.com Specializes in the development, design and manufacture of electron and gas phase ion sources for a range of applications: Sample cleaning and depth profiling ion guns for surface analysis instruments; Primary focused ion sources for SIMS; High resolution focused ion columns for micromachining applications; Low energy ion sources for surface charge stabilization and sample cleaning; Indirectly heated cathode assemblies for Xray sources and electron guns; X-ray anodes; Electron guns for general applications.
Mustang Vacuum Systems 637 7135 16th Street East Sarasota, FL Phone: 941-377-1440 www.mustangvac.com For vacuum coating, metallizing, thin film deposition via a sputtering machine, optical coater, or batch metallizer, Mustang Vacuum Systems is your source for the best coating equipment available. Mustang Vac produces Vacuum Metallizing and High-Vacuum Sputtering Systems and Equipment.
Nor-Cal Products, Inc. 901 1967 South Oregon Street Yreka, CA 96097 Phone: 530-842-4457 www.n-c.com Manufacturer of high vacuum components since 1962. Standard components: flanges, fittings, viewports, feedthroughs and flexhose; isolation and pressure control valves; thermal products; molecular sieve, particulate and cold traps; thin film components; pressure gauges and manipulators. Custom components: chambers, traps, manifolds, collars and baseplates from customer specifications. 3D Model Library available on-line. An ISO 9001-2008 certified company.
NNIN 440 National Nanotechnology Infrastructure Network c/o Cornell University CNF, 250 Duffield Hall Ithaca, NY 14853 Phone: 607-254-4872 www.nnin.org NNIN is a network of 13 advanced user facilities available on an open basis for research and development in nanotechnology. Equipment, processes, and facilities are available to support projects in physics, electronics, optics, MEMS, materials, chemistry and biology. Extensive staff and technical support resources are available to support users at all levels in making productive use of our facilities
Omicron Nanotechnology USA 322 14850 Scenic Heights Road Suite 140 Eden Prarie, MN 55344-2243 Phone: 952-345-5240 www.omicron-instruments.com OMICRON NanoTechnology is the premier supplier of UHV instruments for nanoscience-related research. We invite you to visit our booth to see the next generation Low Temperature (down to 4K) Atomic Force Microscope with enhanced LHe hold time. The Variable Temperature AFM/STM is now available with a non-optical force sensor. We will also be highlighting the ESCA+, and NanoSAM surface science systems. From thin film development to characterization, Omicron can help.
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EXHIBITOR PROFILES Omley Industries, Inc. 537 150 Corporate Way Grants Pass, OR 97526 Phone: 541-955-9415 www.omley.com Omley Industries specializes in a wide variety of vacuum brazed components including specialty hermetic feedthroughs and stand-offs; sapphire, diamond and beryllium windows; optical and infrared probes. Omley focuses exclusively on prototype and OEM production vacuum brazing. We braze specifically for your designs and applications. Limited quantities are no problem. Oxford Instruments - Austin 219 4114 Todd Lane Austin, TX 78744 Phone: 512-441-6893 www.oxford-instruments.com Oxford Instruments - Austin Scientific specializes in the manufacture and service of cryogenic vacuum pumps, cryocoolers, and closed cycle helium compressors. Our support and service program takes a personal approach to maintaining and enhancing performance, reliability, and uptime. Dedicated professionals, based in our ISO 9001 certified manufacture and repair facility in Austin, Texas, have the expertise and resources to quickly diagnose and respond to your needs, keeping your systems running at peak efficiency.
PHPK Technologies 431 2111 Builders Place Columbus, OH 43204 Phone: 614-486-4750 www.phpk.com CVI Torr Master® cryopumps meet today's need for fast, contamination-free, ultra-high vacuum at competitive costs. Benefits include higher capacities for gas cryoabsorption, increased pumping speeds, acceptance of higher radiant heat loads and shorter cooldown and regeneration times. The Torr Master line is used in fields such as vacuum coating, semiconductor production, particle accelerators, sputter deposition systems and Molecular Beam Epitaxy.
Pfeiffer Vacuum Technology, Inc. 609 24 Trafalgar Square Nashua, NH 03063 Phone: 603-578-6500 www.pfeiffer-vacuum.com For more than 120 years, Pfeiffer Vacuum has set the standard of excellence in vacuum technology. Now, with two key acquisitions - adixen Vacuum and Trinos Vacuum - Pfeiffer Vacuum becomes a true solution provider, offering customers everything they need to create, enable and measure vacuum. Products Include: turbomolecular, fore vacuum, and Roots pumps, turbopump stations, residual gas analyzers, helium leak detectors, gauging and custom vacuum chambers and vacuum hardware.
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EXHIBITOR PROFILES Physical Electronics 501 18725 Lake Drive East Chanhassen, MN 55317 Phone: 952-828-6100 www.phi.com Physical Electronics is a subsidiary of ULVAC-PHI the world's largest supplier of surface chemical analysis instrumentation. To learn about the latest innovations in our XPS, AES, and TOF-SIMS instruments, use the “AVS Program Guide Search Tool” at www.avs.org to view the times and locations of the many technical talks being presented or co-authored by Physical Electronics staff. We hope you plan to attend! Please visit us at booth 501 in the Exhibition Hall or on the web at www.phi.com.
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Physics Today 238 One Physics Ellipse College Park, MD 20740 Phone: 301-209-3043 www.physicstoday.org Physics Today is the foremost physics magazine in the world, delivered to more than 300,000 readers in four different media—120k subscribers in print (30k outside the USA), 140k unique visitors each month, 60k registered for e-mail alerts, and 40k PDF downloads each month. Tomorrow’s vacuum and solar innovations start with the 64,000 researchers at government, industrial and university labs who read Physics Today. Exhibitors-take a break while you're still inside the Exhibit Hall. Visit our Exhibitor Lounge; grab a coffee and play our Wii games--you can win a free ad in Physics Today!
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PHI 710 Nano Nanoprobe probe · AES
VISIT PHI IN BOOTH 501 WWW.PHI.CO M
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EXHIBITOR PROFILES Phytron, Inc. 216 600 Blair Park Road Suite 220 Williston, VT 05495 Phone: 802-872-1600 www.phytron.com Established in 1947, Phytron is a leading manufacturer of stepper motors and controls in extreme environments: vacuum, radiation, cryogenic and space. Unparalleled quality, innovation, full in-house testing&qualification combined with motors as small as 19 mm in diameter, are just some of the reasons that put Phytron in the forefront of vacuum motor technology. Plasmaterials, Inc. 718 2268 Research Drive Livermore, CA 94550 Phone: 925-447-4030 www.plasmaterials.com PLASMATERIALS, Inc., supplying high purity materials for the thin film industry since 1987. We make planar and rotatable sputtering targets, backing plates, backing tubes, evaporation materials, crucible liners, ebeam starter sources and provide bonding services. We serve our customers from small R&D requirements up through full scale production requirements. For more information, please contact one of our sales engineers. Plasma-Therm 905 10050 16th Street North St. Petersburg, FL 33716 Phone: 727-577-4999 www.plasmatherm.com Established in 1974, Plasma-Therm is a U.S. manufacturer of advanced plasma processing equipment focusing on research and development systems to high volume production in specialty semiconductor markets including solid state lighting, power, data storage, renewable energy, MEMS, nanotechnology, photonics, and wireless communication. They offer leading etching and deposition technologies and solutions for these markets. Sales and service locations throughout North America, Europe, and Asia-Pacific meet the diverse needs of Plasma-Therm’s global customer base. For further information please visit www.plasmatherm.com.
Precision Ceramics USA 630 86 Lower Tower Street Birmingham, B19 3PA United Kingdom Phone: 44-121-687-5858 www.pcusinc.com Precision Ceramics USA is a company dedicated to the engineering of technical ceramics and offers a complete service from procurement and supply through to technical design and specialist machining. Since its UK formation in 1992, Precision Ceramics USA has gained a reputation for quality and service with specialist ceramic components engineered by the company finding their way into an ever-widening array of worldwide applications in industries as diverse as aerospace, defense, electronics and opto-electronics, power generation and offshore oil and gas production. Precision Ceramics opened its Florida office in late 2009 in response to the increasing volume of requests from US clients for us to address their varied needs in our industry. Our presence at several international trade shows in the US and Europe has further highlighted our expertise and led to a wider global understanding of our ability to solve technical problems and provide a total ceramics solution. Precision Plus Vacuum Parts 616 6416 Inducon Drive W Sanborn, NY 14132 Phone: 716-297-2039 www.precisionplus.com Precision Plus is the recognized leader in providing high quailty, low-cost vacuum pump replacement parts. Over 50,000 stocked parts, including oil, filters, rotors, shafts, plates, fittings, repair kits and more for 650+ OEM models. Alcatel, Becker, Busch, Ebara, Edwards, Fisher Scientific, Galileo, Kinney, Leybold, Pfeiffer, Precision Scientific, Rietschle, Stokes, Ulvac, Varian & Welch. Right Parts. Right Price. Right Now. Contact us at
[email protected] or visit us online at www.precisionplus.com for schematics, msds, technical support and more!
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EXHIBITOR PROFILES Prevac sp. z o.o. 314 Raciborska 61 Rogow, 44362 • Poland Phone: 48-32-459-2000 • www.prevac.eu/ PREVAC formed in 1996 as a world leading manufacturer of UHV scientific research instruments and systems for the investigation of chemical and physical properties of solid state surfaces, thin films, interfaces and nanomaterials. We specialize in delivering custom deposition and analysis systems to clients who find that standard, off the shelf “solutions” simply do not meet the expectations demanded by the very latest cutting edge experimental investigations. Our products, including ion, electron, x-ray, UV and thermal sources, chambers, sample conditioning, transfer and manipulation are fabricated entirely in-house and are installed globally and used by many of the world’s leading researchers. PVD Products 614 35 Upton Drive • Suite 200 Wilmington, MA 01887 Phone: 978-694-9455 • www.pvdproducts.com PVD Products sells a complete line of high quality thin film deposition systems including magnetron sputtering, laser deposition and thermal and electron beam evaporators for both R&D and proto-type production applications. All systems can be fully computer controlled and load-locked. PVD Products manufactures components such as the Titan magnetron sputter source, substrate heaters, and PLD target manipulators. We also provide in-house deposition and SEM/EDS services. R.D. Mathis Company 318 2840 Gundry Avenue Signal Hill, CA 90755 Phone: 562-426-7049 • www.rdmathis.com The R. D. Mathis Company specializes in the manufacture of Hi-Vacuum evaporation sources and continues to support the thin film coating and metalizing industries as we have since 1963. We offer a comprehensive selection of tungsten, molybdenum and tantalum sources through our catalog as well as custom fabrication to meet your specific coating needs. We also offer our “LV Series” Low Voltage High Current Power Supplies and our “GP 100 “ Inert Gas Purifier to compliment your evaporation process. Please stop by our booth , visit our website, or call for more information and a copy of a catalog. ISO9001:2008, AS9100:2004B
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EXHIBITOR PROFILES RBD Instruments, Inc. 416 2437 NE Twin Knolls Dr. Suite 2 Bend, OR 97701 Phone: 541-330-0723-310 www.rbdinstruments.com Acquisition instrumentation that accurately measures and data logs ion and electron currents in vacuum systems. Sputter Ion Sources. Compact Auger Analyzer. High Vacuum UV Water Desorption System. Service, replacement parts, and software upgrades for previous generations of Physical Electronics (PHI, Perkin-Elmer) surface analysis systems and components. Viewports and Custom Coatings for Vacuum Applications Filament Rebuild Services X-ray Anode Recoating Services Zero-Clearance UV Emitter Water Desorption System. Refining Systems 641 P.O. Box 72466 Las Vegas, NV 89170 Phone: 702-368-0579 www.refiningsystems.com Industry leader in the manufacturing of precious metal products. The Refining Systems product line has been tailored to meet the increasing needs of various hightech industries, research facilities, mining laboratories and countless other trades. We manufacture custom made sputtering targets, evaporation materials, rods, sheets, wires, foils, shots, tubing, discs and other hightech products. RF VII Inc. 612 1041 Glassboro Rd. Bldg E-1 Williamstown, NJ 08094 Phone: 856-875-2121 www.rfvii.com RF VII Inc. manufactures quality RF equipment for use in Semiconductor, Analytical, Medical, Induction Heating, and Coating processes. We manufacture RF Generators and Auto-Tuners with power levels from 100 3500 watts with frequency bands from 1 - 40 MHz. All our RF Generators are lightweight and Air Cooled ! We offer repair on many different brands of existing RF Equipment with fast turnaround for our production environment customers. Our commitment is to the customer and their requirements in RF related concerns. Offering phone and on-site assistance for RF service, coupling and control for all RF source processes. We offer a full range of RF equipment parts including new power tubes for older RF generators.
RHK Technology Inc. 405 1050 East Maple Road Troy, MI 48083 Phone: 248-577-5426 www.rhk-tech.com Imaging the Future of Nanoscience: RHK is the chosen company for fundamental science at the atomic scale. Our UHV STM, 4-probe STM, AFM, and controllers are engineered for the advanced researcher but also comfortably systemized for the first-time buyer. To choose RHK is to experience peak performance, scalability, compatibility, and value. Celebrating 20 years of commitment to customer and quality, we partner with the researcher to support our products over a lifetime of experimental success. Rocky Mountain Vacuum Tech., Inc. 716 14510 E Fremont Ave. Centennial, CO 80112 Phone: 303-799-5882 www.rmvac.com Rocky Mountain Vacuum Tech manufacturesVacuum Systems and Components used in research and production environments. RMV supplies revolutionary vacuum systems to those customers that expect exceptional quality and reliability at an affordable price. Through the Mark IV™ line of vacuum products, RMV carries a broad selection of versatile vacuum solutions, ranging from Desktop options (such as the new Desktop R&D Deposition System) to Large Area Coaters capable of mass producing Solar Cell Components and Systems. SAES Getters USA 329 1122 East Cheyenne Mountain Blvd Colorado Springs, CO 80906 Phone: 719-576-3200 www.saesgetters.com SAES Getters will display its world-leading getter solutions supporting various industrial and scientific applications. Exhibit highlights will be: MK5 SORB-AC and CapaciTorr pumps for vacuum systems; WaferGetter pumps for semiconductor process chambers; IntegraTorr sputtered NEG coatings for particle accelerators; getter solutions for MEMS, flat panel displays, cryogenics, lamps and more.
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EXHIBITOR PROFILES SAES Getters USA 329 1122 East Cheyenne Mountain Blvd Colorado Springs, CO 80906 Phone: 719-576-3200 www.saesgetters.com SAES Getters will display its world-leading getter solutions supporting various industrial and scientific applications. Exhibit highlights will be: MK5 SORB-AC and CapaciTorr pumps for vacuum systems; WaferGetter pumps for semiconductor process chambers; IntegraTorr sputtered NEG coatings for particle accelerators; getter solutions for MEMS, flat panel displays, cryogenics, lamps and more. Scientific Instrument Services, Inc. 427 1027 Old York Road Ringoes, NJ 08551 Phone: 908-788-5550 www.sisweb.com Scientific Instrument Services is a leading global provider of supplies and services for Scientific Instrumentation. SIS specializes in the manufacture of filaments for spectrometers and related instrumentation. Contract Machining. SIS has expanded our machine shop for the manufacture of parts for scientific instruments. Our shop includes ultramodern CNC equipment for the machining of parts from virtually all materials to the high precision standards and cleanliness required by our customers.
BOOTH 329
Semicore Equipment, Inc. 709 470 Commerce Way Livermore, CA 94551 Phone: 925-373-8201 www.semicore.com Semicore Equipment, Inc., a Silicon Valley based manufacturer, supplies, services and supports Sputtering, Evaporation, Thin Film PVD systems for the electronics, optical, solar energy, medical, military, academic and related high technology industries worldwide. Semicore’s products provide quality coatings on a variety of materials including plastic films, glass, ceramics, metals and hybrid substrates and range from R&D to high-performance production level systems at a competitive price.
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EXHIBITOR PROFILES Semilab SDI LLC 334 3650 Spectrum Blvd. Suite 130 Tampa, FL 33612-9446 Phone: 813-977-2244 www.semilab.com Metrology equipment for R&D and the characterization of semiconductor and photovoltaic materials for monitoring the manufacturing process of semiconductor devices and solar cells. We offer a variety of measurement techniques; most of them are non-contact and non-destructive. Many of our technologies can be flexibly integrated in different platforms, ranging from simple handheld devices and table-top systems with high resolution mapping capability to fully automated stand-alone production control tools for midrange and high-level fablines. We also offer in-line measurements for solar cell production lines. Shanghai Joysun Machinery & Electric 634 Equipment Manufacture Co., Ltd. No.385 Kaiqing Road Pudong, Shanghai 201201 • China Phone: 0086-021-68915100 www.joysun-machinery.com X series vacuum pump of our company is single stage sliding van rotary vacuum pump of oil sealed type .This vacuum pump is the main equipment to create the vacuum environment of low and medium vacuum .It can be exclusively used or be the backing vacuum pump of the mechanic booster and turbo molecular vacuum pump. We introduced in advanced technology form overseas, and the vulnerable parts are the imported components or Made in imported materials, so that it can completely replace the similar type form the overseas. Shimadzu Precision Instruments 301 2350-A Walsh Avenue Santa Clara, CA 94517 Phone: 408-566-0960 www.shimadzuvacuum.com SPI is comprised of three groups; Aircraft Group, Medical Systems Group, and the Semiconductor Equipment Group. SPI markets and sells various aircraft parts, medical equipment, and industrial machinery, including an extensive line of Turbo Molecular Pumps.
Shimadzu Scientific Instruments 301 7102 Riverwood Drive Columbia, MD 21046 Phone: 410-381-1227 www.shimadzu.com Shimadzu’s new line of UV-Vis spectrophotometers, offer feature/cost benefits that outclass the competition. The high photometric range of 8.5 abs for the UV-2700 and extended spectral range to 1400 nm for the UV2600 make these ideal bench systems for the coating and ink industry. The full array of feature-rich accessories and software make for complete systems that can handle the most demanding tasks. With its 30000:1 S/N sensitivity, stabilizing dynamic alignment interferometer, and electronic humidity protection, the FTIR IRAffinity-1 is the best choice for characterization of films, inks and coatings. The full-sized sample compartment, complete range of accessories, and FTIR microscope options make the IRAffinity-1 the instrument of choice for all development and production needs. Find your solution with Shimadzu. Solid Sealing Technology, Inc. 327 44 Dalliba Ave. Watervliet Arsenal Watervliet, NY 12189 Phone: 518-874-3600 www.solidsealing.com Solid Sealing Technology specializes in the design and manufacture of hermetic products using metalizing, brazing, glass-ceramic sealing, welding, and critical mechanical assembly. Products include Vacuum Feedthroughs; Coaxial and Multi-Pin Connectors; Thermocouple Connectors; and Isolators. SST provides sealing solutions for high temperature, ultra-high vacuum and high pressure environments and is a Global provider of industry standard and custom designed products. SPECS Surface Nano Analysis, Inc. 317 Voltastr. 5 Berlin, 13355 • Germany Phone: 49-30-467824-0 www.specs.com SPECS manufactures systems and components for surface analysis, based on electron spectroscopy and imaging techniques such as SPM and LEEM. In customized systems SPECS integrates facilities for thin film preparation and in-situ analysis in Vacuum systems from UHV to high pressures.
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Elevating Excellence in UV-Vis Analysis at Booth 301 Superior Performance for the Coating and Ink Industry +PCFFKVKQPVQCFXCPEGFQRVKECNU[UVGOU and Shimadzu’s unique p.Q4C[.KIJqFKHHTCEVKQP ITCVKPIUYJKEJUWDUVCPVKCNN[ TGFWEGUVTC[NKIJV5JKOCF\WoU PGYWNVTCEQORCEVUKPING monochromator UV-2600QHHGTU CPWODGTQHJKIJRGTHQTOCPEGCPF RTQFWEVKXKV[GPJCPEKPIHGCVWTGUVQGPCDNGEQPƂFGPVCPF EQPXGPKGPVWUGHQTTQWVKPGCPCN[UKUCUYGNNCUFGOCPFKPI TGUGCTEJCRRNKECVKQPU
Key features include: /GCUWTGOGPVTCPIGVQPO 78 s/GCUWTGCYKFGTCPIGQHOCVGTKCNU s'PCDNGUGZRCPFGFTGUGCTEJQHRJQVQXQNVCKEU 7NVTCNQYUVTC[NKIJV 6CVPO 5OCNNGUVHQQVRTKPVKPKVUENCUU USB connection (GCVWTGTKEJCEEGUUQTKGUCPFUQHVYCTGKPENWFKPICP QRVKQPCNƂNOVJKEMPGUU59RCEMCIG 7PDGNKGXCDNGRGTHQTOCPEGRTKEGTCVKQ
www.specs.com
Learn more at Booth 301 Learn more about Shimadzu’s UV-2600. Call (800) 477-1227 or visit us online at
www.ssi.shimadzu.com/2600 Visit us at booth number 317
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EXHIBITOR PROFILES SPI Supplies 438 569 East Gay Street West Chester, PA 19380 Phone: 610-436-5400 • www.2spi.com SPI Supplies is a worldwide leading manufacturer and distributor of sample preparation equipment and consumable supply items for electron microscopy and other vacuum laboratory applications. A full line of greases, fluids and wipers for all vacuum applications. Cryo Gloves, dewars and view ports. Vacu Prep II bench top vacuum evaporator. Products include Apiezon, Braycote, Fomblin, Santovac, TorrLube and Vacseal. Springer 202 233 Spring street New York, NY 10013 Phone: 212-460-1529 www.springer.com/?SGWID=0-102-0-0-0 Springer is a leading publisher of books and journals in engineering and physical sciences. Visit us today at Booth #202 to browse through a selection of our latest titles with a special discount off books for AVS conference participants. Free sample copies of journals are also available. Visit us online at www.springer.com. Staib Instruments 723 101 Stafford Court Williamsburg, VA 23185 Phone: 757-565-7000 • www.staibinstruments.com STAIB Instruments designs/manufactures innovative, high-performance, electron-optical equipment for insitu material analysis. Electron Guns for surface studies, RHEED to study structure and quality of thin films, Energy spectrometers (Auger, XPS, UPS) for analytical studies. SEM with micro/nano-focus guns, Photo-ElectronEmission Microscopes (PEEM), Custom analytical chambers and instruments. Sumitomo (SHI) Cryogenics of 618 America Incorporated 1833 Vultee Street • Allentown, PA 18103 Phone: 610-791-6700 • www.shicryogenics.com Marathon® CP Series Cryopumps from SHI Cryogenics Group are specifically designed to meet the needs of high vacuum processes. Ranging in size from 8 to 20 inches, they can be readily maintained without breaking vacuum or removing the cryopump from the chamber for return or replacement. As a result, serviceability maximizes production uptime and lowers the total cost of ownership.
Super Conductor Materials 325 391 Spook Rock Industrial Park Suffern, NY 10901 Phone: 845-368-0240 www.scm-inc.com Serving vacuum technology since the 80's, we specialize in sputtering targets, evaporation materials for semiconductor, optical, display technology, magnetic media, electronic, solar panel and allied industries. Materials are available from Aluminum to Zirconium including their alloys and compounds. Also support electron beam evaporation by manufacturing evaporation materials and crucible liners in 14 different materials for all major e-gun systems. Custom crucibles are also available. Sycon Instruments, Inc. 611 6757 Kinne Street East Syracuse, NY 13057 Phone: 315-463-5297 www.sycon.com Sycon Instruments, Inc. is a manufacturer of Thin Film Deposition Monitors and Controllers utilizing the crystal sensing technique. These products include the STC2002 & 2000A Controller, STM-100/MF, Thickness Monitor. The EBS-530, E-Beam Sweep Control.The STM-1 Monitor with integrated oscillator for use with your PC. The SRT-422 E-Beam Source Indexer. The T-3000 Deposition Power Supply. The VSO-100 InVacuum sensor oscillator and a complete line of sensors, crystals and feedthroughs. Synergy Systems Corporation 209 16241 6300 Road Suite A PO Box 177 Montrose, CO 81402 Phone: 970-240-9429 The Original Oil-Free scroll vacuum pump - Anest Iwata ISP/DVSL Scroll vacuum pumps and compressors, OEM Parts/Service. RGA & Turbo Carts; High-capacity oil-free scroll and dry screw blower pumping systems; We are the authorized distributor for Anest Iwata scroll pumps and compressors and LOT Dry Screw Pumps; with pumping capacities from 2.1 cfm to 4000 cfm. We offer complete OEM maintenance services for most roughing and highvacuum pumps including repairs, parts and training.
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EXHIBITOR PROFILES Synergy Vacuum, Inc. 441 2510 North Townsend PO Box 2084 Montrose, CO 81402 Phone: 970-240-9228 www.synergyvacuum.com Your home for Authorized Sales & Service of The Original ANEST IWATA Oil-Free Scroll Pumps + exciting new lines: The fully automated and PLC controlled SVT-50 Turbo Cart; the SVR-50 RGA Cart; a new lineup of diaphragm pumps; the DVSL 100B & 501B high vapor pumping capacity oil-free scroll pumps. With all our products, we offer Total Support TM - customizable maintenance & exchange; See us for OEM parts & service for ISP, ESDP, GVSP, DS, & DIS pumps. Tech-X Corporation 439 5621 Arapahoe Avenue Boulder, CO 80303 Phone: 303-448-0727 www.txcorp.com A leader in the development of scientific software, presents Vorpal: An Electromagnetics and Plasma Code Suite. Vorpal is the most powerful computational application for modeling the detailed physics needed to understand the complex plasma phenomena found in processing chambers, RF source production, medical physics, and more. We will demonstrate new features, discuss our new appliances for simplifying the simulation of your most challenging problems, and work with you to solve your problem. Ted Pella, Inc. 622 PO Box 492477 Redding, CA 96049-2477 Phone: 530-243-2200 www.tedpella.com Ted Pella, Inc offers versatile compact bench top vacuum coaters for thin film applications which can be equipped with high resolution thickness monitors and multi-angle rotary stages. They also offer a full line of vacuum pumps, vacuum parts and evaporation supplies for research applications and small scale production. On display will be a large selection of supplies, consumables, tools and preparation equipment for SEM, TEM, AFM, and surface science sample preparation, quality control and laboratory applications.
Telemark 218 1801 SE Commerce Avenue Battle Ground, WA 98604 Phone: 360-723-5360 www.tfi-telemark.com TELEMARK offers evaporation components, including electron beam sources, e-beam power supplies, optical monitors, plasma chemistry monitors, water vapor cryotraps, magnetic fluid feedthrus, quartz crystal deposition controllers, Ion Beam Systems, and related accessories. TGM Inc. 639 1810 North Glenville Drive Suite 108 Richardson, 75081 Phone: 972-761-9101 www.tgm-incorporated.com We are a provider of a complete turnkey patented heater jacket system for vacuum lines downstream from the IC manufacturing tools. From its beginning in 1988, TGM has been an innovator of thermal efficiency solutions for an impressive body of industries including: aerospace, food processing, pharmaceutical, petrochemical, telecommunication, transportation, and semiconductor manufacturing. TGM also continues a quality heat trace and mechanical insulation contracting division specializing in controlled gas supply lines. Thermionics Vacuum Products 717 1842 Sabre Street Hayward, CA 94545 Phone: 510-538-3304 www.thermionics.com Manufactures vacuum components, systems and accessories for production and research applications including: our VE-160 and VE-240 PVD coating system; our line of LHe cooled manipulators; our 1500cc capacity IC series eGun™; our production class HC series of e-Guns™ with dual filament; our research class RC series eGuns™; PyraFlat™ rectangular flange; TriMetl™ (aluminum to stainless and copper to stainless) flanges and fittings; gate and poppet valves; sample handling and transfer systems; ion pumps; maTChed™ thermocouple gauges; mechanical, electrical and fluid feedthroughs
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Tracs Chillers 631 790 Route 16 • Ossipee, NH 03864 Phone: 603-387-7830 • www.tracschillers.com Manufacturers of process cooling equipment - Air cooled chillers, water cooled chillers and water to water heat exchangers. Tracs uses the well proven plate heat exchanger connected to a PID controller to provide precise temperature control. Modular construction allows Tracs to provide custom process cooling solutions at a price competitive with "off the shelf" chillers. Several innovations in design have dramatically reduced the number of both refrigeration and water joints within the chiller to virtually eliminate the possibility of leaks, maximizing the up time of your process. Products are available from 1 kW to 32 kW heat removal capacity with a wide range of pumps to meet the most demanding processes. All of the products can be configured to meet world wide electrical configurations. Each chiller is assembled by hand and is subjected to 3 days of rigorous testing prior to shipment. Pleasing, no nonsense packaging will compliment your process tools. Torr Scientific Ltd 416 Pebsham Lane • Bexhill-on-Sea East Sussex, TN40 2RZ • UK http://www.torrscientific.co.uk/ An innovative company that brings together a unique range of expertise, skills and equipment from the worlds of thin film vacuum coating, vacuum instrumentation and electro-optics. The company manufactures X-ray anodes, UHV Viewports and processes anti-reflective coatings. Torr Scientific was established in 1998 and the employees of the company have many years of experience in the UHV and Electro-Optical industries. Products are manufactured in cleanroom conditions and facilities include vacuum furnaces, TIG welding, helium leak testing, e-beam and sputter coating systems and a UV-Vis spectrophotometer.
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smarter
spectroscopy Advanced materials offer unique properties linked to their physical forms and structures. As nondestructive analytical techniques, Raman and surface analysis spectroscopy are indispensable tools. The Thermo Scientific DXR Raman and the Thermo Scientific K-Alpha XPS combine researchgrade performance with unmatched ease of use. That’s smarter spectroscopy.
for advanced materials • see what’s possible at thermoscientific.com/carbon
Thermo Scientific DXR Raman Microscope © 2012 Thermo Fisher Scientific Inc. All rights reserved.
Thermo Scientific 417 5225 Verona Road • Madison, WI 53711 Phone: 608-276-6100 www.thermo.com/surfaceanalysis Thermo Scientific will display the K-Alpha Materials Characterization instrument and the DXR Raman Microscope. Using X-ray Photoelectron Spectroscopy (XPS), the K-Alpha enables rapid, accurate and costeffective quantitative monitoring of the surface chemical composition of the top few nanometers of solid materials. The DXR Raman microscope is a researchquality tool designed specifically for today's multi-purpose analytical labs.
Thermo Scientific K-Alpha XPS System
BOOTH 417
EXHIBITOR PROFILES Transfer Engineering & Manufacturing, Inc. 624 47697 Westinghouse Drive Suite 100 Fremont, CA 94539 Phone: 510-651-3000 www.transferengineering.com Transfer Engineering provides innovative products for OEM, Production and R&D customers in Semiconductor, Media, Sputter Deposition and R&D markets. Core expertise is in handling, transporting, positioning, and manipulation of samples, semiconductor wafers, substrates, flat panels and other materials in HV, UHV and other controlled environments. Product lines include transfer arms, sample transfer and loadlock systems including MASCOT and TEAM-Mate MESC compatible wafer transport systems. Trek, Inc. 504 11601 Maple Ridge Road Medina, NY 14103 Phone: 585-798-3140 www.trekinc.com Trek excels in the design/manufacture of off-the-shelf and custom high-voltage power amplifiers and supplies for demanding applications in the physics community. Robust, high performance designs offer voltage range to ±60kV, slew rates to 1500V/µs, current to 10A and bandwidth to 3MHz. Applications include poling of nonlinear optical crystals, ion beam deflection, and numerous fields of research. Trek’s electrostatic measurement instruments deliver excellent results in non-contacting or contacting environments.
[email protected] UC Components 610 POB 430 Morgan Hill, CA 95038 Phone: 408-782-1929 www.uccomponents.com UC Components manufacturer of RediVac™ Vented, Coated, Plated, Polished & Cleaned Fasteners & RediVac™ Cleaned and Vacuum Baked O-Rings for vacuum applications. All RediVac™ Products are Precision Cleaned & Class 100 Packaged for immediate vacuum use. Reduce pump-down times & contamination in your UHV system! UC now offers a full line of RediVac™ Slot-Vented and Gold Plated Fasteners in Inch and Metric standards. Call for our latest catalog or visit & buy on-line at www.uccomponents.com.
Vacuubrand, Inc. 535 11 Bokum Road Essex, CT 06426 Phone: 860-767-5341 www.vacuubrand.com Exhibiting quiet, compact, low-vibration, oil-free diaphragm pumps for backing/roughing high vacuum systems, for corrosive chemical evaporation and other OEM applications. Pumps have long service intervals in continuous duty, and run clean, without oil mist or particulate discharge. Frequency-controlled motors available. Also, chemical-resistant electronic gauges and controllers with optional computer interface. Vacuum Research Corp. 300 2419 Smallman Street Pittsburgh, PA 15222 Phone: 412-261-7630 www.vacuumresearch.com Manufacturer for 50 years of a broad line of high vacuum valves. Throttle valves, poppet style valves, rectangular port valves, and gate valves from ISO-63 to ISO-800 & CF 2.75 to 14 inch OD. Valves with ANSI and JIS flanges to 32 inch. Also Pirani, convection and diaphragm gauges from 10-5 Torr to 2 atmospheres. Rotary vane pumps from 3 to 64 cfm, 6 to 108 m3/hr. We will have our throttle valve in operation in our booth. Value Mechanical & Electrical 628 Products Co., Ltd. Jiulong Avenue Western Industrial Park of Wenling City Zhejiang, 317500 Wenling • China Phone: 86-576-86992909 www.valuevacuum.cn VALUE Company is absorbed in researching, developing and manufacturing vacuum pumps. We keep creating value for customers by our techniques and innovations, and also offering the best products with best services. We achieved ISO9001 administering certification, CSA, UL, CE, CCC security certification, and also passed the ROHS and WEEE testing project. All our products measure up with the prescribed quality, security and eco-standards.
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EXHIBITOR PROFILES $OXPLQXP9DOYHVZLWK
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VAT 428 500 West Cummings Park Ste. 5450 Woburn, MA 01801 Phone: 781-935-1446 • www.vatvalve.com VAT is the worldwide leader in vacuum valve technology. VAT has developed and patented well-known sealing technologies like VATLOCK, VATRING and MONOVAT. VAT vacuum valves are used in most of all in the following areas: Semiconductor and Flat Panel Display Manufacturing; Glass and Tool Coating; Metallurgy, Surface Analysis; High Energy Physics; Synchrotrons; Laser Technology; Space Simulation and many more. VAT products include: Angle valves, gate valves, transfer valves, control valves, isolation valves, pendulum valves, valves designed for custom applications. VG Scienta 523 235 Main Street Pleasanton, CA 94566 Phone: 925-249-0204 • www.vgscienta.com VG Scienta is the world’s premier supplier of UHV vacuum components, surface analysis instruments, and UHV systems to industry, R&D firms, and the scientific community. VG Scienta remains at the cutting edge of science with over 40 years experience in HV and UHV technology Welch-Ilmvac 640 5621 W. Howard Street Niles, IL 60714 Phone: 847-676-8800 • www.gardnerdenver.com Gardner Denver, founded in 1859, is a global manufacturer of industrial compressors, blowers, pumps, loading arms and fuel systems. The Company has 40 manufacturing facilities located in the Americas, EMEA and Asia Pacific with offices in 36 different countries
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BOOTH 300
Wiley 210 111 River Street Hoboken, NJ 07030 Phone: 201-748-8893 • www.wiley.com Wiley publishes an enormous range of top quality consumer, professional, educational and research material, from the well-known Frommer’s and ‘For Dummies’ guides, to college textbooks, and highly ranked peerreviewed primary research . Wiley offers libraries and individuals 1250 online journals, thousands of books in print and online, reviews, reference works, databases, and many other innovative resources for teaching and learning, including across the social sciences and humanities. For more information, visit www.wiley.com.
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EXHIBITOR PROFILES Yugyokuen Ceramics Co., Ltd. 215 1-46-2 Kamiikedai Otaku Tokyo, 1450064 Japan Phone: 81-3-3726-4455 www.yugyokuen-ceramics.com “Good things come in small packages.” We are a Japanese small-medium size ceramic manufacturer but we can cooperate to the greatest extent possible in what big ceramic companies cannot do. 70% of our domestic customers are listed in Japanese securities market is a corroborate evidence. Our ceramics and ceramic assembly products are widely recognized in a competitive Japanese market because excellent electric, thermal and chemical characteristics meet our customer’s requirements. Also our ceramic assembly products such as metalized, glazed and brazed ceramics create a high-performance of client’s equipments.
WELCOME AVS NEW EXHIBITORS Anasys Instruments Angstrom Scientific Inc Azbil North America Bruker AXS, Inc. Bruker Optics, Inc. COSMOTEC Corporation ESI Glas-Col Heidelberg Instruments, Inc. Julabo USA, Inc.
Zeon Chemicals L.P. 511 4111 Bells Lane Louisville, KY 40211 Phone: 512-775-2000 www.zeon.co.jp/business_e/enterprise/imagelec/i magelec.html ZEON is an R&D-centric innovator of next generation etch gases. Currently, ZEON has been exploring the challenges associated with the next generation technologies in processes such as SiN spacer, low-k, TSV, and others. Our skilled team of research scientists partner with the industry’s leading semiconductor manufacturers to create a wealth of knowledge and expertise specifically designed to achieve these goals. Two IBM/ZEON joint papers will be presented during this conference.
Labtec Sales Partners LLC Mustang Vacuum Systems Precision Ceramics USA Semilab SDI LLC Shanghai Joysun Machinery & Electric Equipment Manufacture Co.,Ltd. TGM Inc. Torr Scientific Tracs Chillers Value Mechanical & Electrical Products Co., Ltd.
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AVS-60 LONG BEACH CONVENTION CENTER LONG BEACH, CALIFORNIA Symposium Dates: October 27 - November 1, 2013 Exhibit Dates: October 29 - 31, 2013
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AVS Co-sponsored/endorsed 2013 Topical Conferences PCSI 39 (40th International Conference on the Physics and Chemistry of Semiconductor Interfaces) January 20–24, 2013, Waikoloa Beach, HI http://www.pcsiconference.org 2013 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics March 23–28, 2013, Gaithersburg, MD http://www.nist.gov/pml/div683/conference/index.cfm ICMCTF 2013 (International Conference on Metallurgical Coatings & Thin Films) April 29–May 3, 2013, San Diego, California http://www2.avs.org/conferences/ICMCTF EIPBN 2012 (The 57th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication) May 28–31, 2013, Nashville, Tennessee http://www.eipbn.org
21st International Conference on Ion Beam Analysis June 22–29, 2013, Seattle, WA http://www.emsl.pnl.gov/root/meetings/iba/ IVNC 2013 26th International Vacuum Nanoelectronics Conference July, 2013, Washington, DC http://www.ivnc2012.org 12th International Symposium on Sputtering and Plasma Processes July 10–12, 2013, Kyoto, Japan ALD Conference, Atomic Layer Deposition July 28–31, 2013, San Diego, California http://www.ald-avs.org TACT 2013 International Thin Films Conference October 5–9, 2013, Tapei, Taiwan http://www.tact.org.tw
Surface Analysis 2013 – The 35th Symposium on Applied Surface Analysis June 3–5, 2013, Urbana, Illinois
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FUTURE SYMPOSIA LOCATIONS 2013
October 27–November 1 Long Beach Convention Center Long Beach, California
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November 9–14 Baltimore Convention Center Baltimore, Maryland
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October 18–23 San Jose Convention Center San Jose, California
Credit: Ron Niebrugge, NIEBRUGGE IMAGES Long Beach, California, Downtown Skyline
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