Recent Innovations - MIT ILP

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Mar 23, 2011 - Junior Talent Program (JTP): 24-month trainee program for top ... Since 2001 over 100 SEMI HTU programs h
Recent Innovations Semiconductors and System Solutions Mag. Dr. h.c. Monika Kircher-Kohl CEO Infineon Technologies Austria AG

2011 MIT Europe Conference Innovation in a Networked World: Technology, People, and Places Wednesday, March 23, 2011

Agenda  Semiconductor Business - an Overview

 Market Driven Innovations  New Challenges in Energy, Mobility and Security

 Hidden Innovations  300 MM Thin-Wafer Technology  Silicon Carbide  iRobotics – Cooperative Robotics in Production Lines

 Management Innovations  Creating a ‚Culture of Innovation‘  Enabling Innovations in Human Resource Management

Copyright © Infineon Technologies 2011. All rights reserved.

Page 2

Global semiconductor market development Revenue in US Dollar billion and market growth rate 40%

37%

32%

28%

368 329

18%

18%

301 7%

4% 1% -8%

-8%

132 137 126

213

204 149

227

313 320

20%

6%

10%

296

9% 248

30%

256 249 226

3%

166

6%

-3%

139 141

-9%

0% -10% -20% -30%

-32%

-40%

1996 1997 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Revenue Forecast range revenue

Market growth rate Forecast range (average) market growth rate

Source: WSTS for historical data. Forecast: ∅ of Gartner, iSuppli, IC Insights, VLSI, WSTS; market growth rates year-on-year; last forecast update January 25th 2011 01/02/2011

Copyright © Infineon Technologies 2011. All rights reserved.

Page 3

12.0

7.18

0.0

8.9

12.0

Global economic growth is the key driver for semiconductor market growth

7.18

6.80

6.80

6.20

6.20

5.00

Real GDP & Semiconductor Market Growth

Annual Semiconductor Market Growth [%]

Global Recession

40

III

30

1995 2000 1994

1993

1986

20

2003

In 2010, both the global economy and the global semiconductor market strongly recovered.



There is a positive correlation between real GDP growth and semiconductor market growth.



Field I represents a healthy economy and a growing semiconductor market. In field II, there is a global recession and the semiconductor market shows negative growth. In field III, the semiconductor market – in particular at the beginning of the nineties – was successful in decoupling from the economic cycle and ended with positive growth rates despite a recessive world economy. Field IV with the combination of a healthy economy and a contracting semiconductor market seems to be an anomaly.

1991 2002 2008

0 -10

2009

1998

-30

Growing Semi Market

1987

1996

II

-20

2010

2004

1999 1989 2006 2005 1990 2007 1997

1992

10

I

1988

Contracting Semi Market

IV 2001

-40 -1

0

1

2

3

4

5

Worldwide Real GDP Growth Rates [%]

5.00



50

-2 6.40

Healthy Economy

Comments

6.40

Source: WSTS – T99, 31 January 2011; IHS Global Insight Years are calendar years 8.60 9.20

8.60

Copyright © Infineon Technologies 2011. All rights reserved.

Page 4

9.20

12.0

0.0

8.9

12.0

Quarter-by-quarter-view: Growth in end markets will fuel semiconductor unit shipments 7.18

7.18

6.80

6.80

6.20

6.20

End applications’ and semi unit growth

Comments

5.00

5.00

Year-on-year growth rates 70%

70%

60%

60%

50%

50%

40%

40%

30%

30%

20%

20%

10%

10%

0% -10%

0% 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 2006

2007

2008

2009

2010

2011e

-20% -30% -40% 6.40

-50%

2012e

-10% -20%

Semi unit shipments Handset unit shipments Car unit production Flat Panel TV production units PC unit shipments



The positive outlook for end markets drives semiconductor unit demand in the course of 2011 and 2012.



But there is not only unit demand that drives the semi market, also increasing semiconductor content as well as price developments contributes to semi market growth.

-30% -40% -50%

6.40

Source: WSTS – T99; IHS CSM, Strategy Analytics, Gartner. Years are calendar years

8.60 9.20

8.60

Copyright © Infineon Technologies 2011. All rights reserved.

Page 5

9.20

12.0

7.18 6.80 6.20

0.0

8.9

In addition to GDP and end markets, the following parameters also influence semiconductor market growth Chip capacity & chip production 240

5.00 220

Semi unit shipments in bn [left y-axis]

Chip capacity [msi]

3000

2500

Chip production [msi]

140

Semi industry inventory-to-sales ratio

60%

50%

60%

5.00

50%

40%

30%

30%

OEM, EMS, Disti, Retail inventory-to-sales-ratio

1500 20%

120

1000

100 80 2009

2010

2011e

0.52

0.40 2008

2009

2010

2011e

2012e

3Q

2007

4Q

1Q

2Q

3Q

2008

4Q

1Q

2Q

3Q

2009

4Q

1Q

2Q

3Q

4Q

2010

Given that, capacity utilization is expected to remain close to 90%, leading to more or less firm ASPs. Important to know, capacity utilization is leading ASPs by 1-2 quarters.

0.44 0.42

2Q



0.46 70%

1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q

1Q

Under current conditions (expected GDP and end market growth, current capital spending plans in the semi industry), increasing chip production will meet demand and should neither end in oversupply nor excess inventories. Currently, the inventory situation within the electronics foodchain is stable.

0.48

50%

4Q



80%

60%

3Q

Comments

0.50

Average Selling Price in USD [right y-axis]

2Q

2006

Capacity utilization & Average Selling Price

90%

0% 1Q

2012e

Capacity utilization [left y-axis]

10%

0%

500 2008

20%

10%

1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q

9.20

6.20

2000

160

8.60

6.80

40%

180

100%

7.18

Inventories in the electronics foodchain

200

6.40

12.0

Source: VLSI; WSTS – T99; IHS CSM, Gartner, Strategy Analytics Copyright © Infineon Technologies 2011. All rights reserved.

6.40

8.60

Page 6

9.20

Infineon at a Glance The Company

 Infineon provides semiconductor and system solutions, focusing on three central needs of our modern society: Energy Efficiency, Mobility and Security  Revenue in FY 2010*: 3.295 billion EUR  27,315** employees worldwide (as of December 2010)  More than 21 R&D locations

*Note: Figures according to IFRS with Wireline and Wireless as discontinued operations; as of September 30, 2010 **Note: Including Wireless as discontinued operations; as of December 31, 2010 Copyright © Infineon Technologies 2011. All rights reserved.

Page 7

Agenda  Semiconductor Business - an Overview

 Market Driven Innovations  New Challenges in Energy, Mobility and Security

 Hidden Innovations  300 MM Thin-Wafer Technology  Silicon Carbide  iRobotics – Cooperative Robotics in Production Lines

 Management Innovations  Creating a ‚Culture of Innovation‘  Enabling Innovations in Human Resource Management

Copyright © Infineon Technologies 2011. All rights reserved.

Page 8

Energy Efficiency Key trends  Soaring total energy demand across the globe amid dwindling fossil energy resources  Strong CO2 policies to achieve climate goals  Tapping renewable energies as sustainable energy sources  Electrification of the drivetrain of commercial and passenger vehicles

Our contribution  Infineon delivers semiconductor innovations playing a valuable role in minimizing power loss and maximizing power savings along the entire energy supply chain, extending from generation through distribution to actual consumption.  Our products are the basis for intelligent and optimal use of energy resources in industrial, computing and consumer applications, and in cars. Copyright © Infineon Technologies 2011. All rights reserved.

Page 9

12.0

0.0

8.9

12.0

Most of the electric energy is actually not "consumed" but lost "on the way" 7.18

7.18

6.80

6.80

6.20

6.20

Electricity Generation

5.00

Stone Coal power plant

Transmission & Distribution

ACPower Transmission Distribution

5.00

Consumption (example Notebook)

Power Supply

DC supply

Processor

60 W

220 W 90 W electricity (ca. value)

Mostly thermal losses

1.4 W

3.6 W

13 W

etc. 6.40

Losses: 31 W

6.40

9.20

Memory Display

130 W (~60%)

8.60

13 W

Source: Estimation by Infineon Copyright © Infineon Technologies 2011. All rights reserved.

8.60

Page 10

9.20

12.0

0.0

8.9

12.0

However, it is possible to reduce energy losses with use of technology available today! 7.18

7.18

6.80

6.80

6.20

6.20

Electricity Generation

5.00

Transmission & Distribution

Off-shore Wind HVDC Advanced Power Plant Transmission Distribution

85 W (ca. value)

90plus Power Supply

DC supply

Processor

60 W

77 W electricity

8W ~9%

5.00

Consumption (example Notebook)

1.2 W

2.3 W

5W

7W

Memory Display etc.

6.40

8.60 9.20

6.40

Losses: 15.5 W Source: Estimation by Infineon Copyright © Infineon Technologies 2011. All rights reserved.

8.60

Page 11

9.20

Mobility Key trends  Rigid CO2 regulations and rising oil price  Increasing rules on safety, focusing on preventive measures  Rising new requirements in cars for emerging markets  Urbanization, globalization and demographic change  Strong investments in local and long distance public transportation systems

Our contribution 

Leading semiconductor solutions contributing to a more sustainable mobility in terms of reduced fuel consumption/emissions, improved safety and affordability.



As an innovation driver and supplier of key components for electric and hybrid vehicles, Infineon will actively help to shape the paradigm shift towards electro mobility on the road.



Innovative public transportation solutions for traction and electronic tickets. Copyright © Infineon Technologies 2011. All rights reserved.

Page 12

Leading national economies promote electromobility to give their industry a head start

1.8 – 5.4

2.2 – 6.3

France State Funded

• Electric Vehicles, Plug-in and Fuel-Cell

• Vehicle with < 60g /km CO2 emission

• Electric Car (Exchange of used cars)

• Battery electric vehicles

• Electric Car (in public transport)

Further Incentives (examples)

• Tax Reduction • Free car registration

• Free car registration • Partial Free parking

• Exemption of sales and tonnage tax

• Free parking • No road maintenance fee and no toll

• Regional contributions

Remark: Only retail incentives; partially direct support for research, development and production structure Source: Bain & Company, The Climate Group Copyright © Infineon Technologies 2011. All rights reserved.

Page 13

Electric and hybrid vehicles drive semiconductor demand Auto(ICE) vs. EV/HEV Semiconductor BOM  The material input [in €] of semiconductors in the drivetrain of an electric/hybrid vehicle is 2 to 3 times higher than the average input of semiconductors in cars with conventional combustion engines.  IGBT switches and diodes in the latest module packages account for 50-80%.

Market growth fostered by new vehicle launches

Fast followers enter HEV market

Copyright © Infineon Technologies 2011. All rights reserved.

Page 14

Security Key trends  Requirements for secure systems are visible in all areas of life  Secure communication everywhere utilizing mobile phone and internet  Move to electronic identification of documents and products  Contactless cards for payment and electronic tickets  Increased electronics in cars, calling for secure data handling

Our contribution 

Tailored security according to system requirements, enabling the implementation of transparent security in everyday systems



Leverage our worldwide leadership in security know-how for smart cards in automotive and industrial applications increasingly demanding security



Combining both hardware security and cryptography, our products build the basis for privacy and security while maintaining personal freedom and facilitating extended communication capabilities Copyright © Infineon Technologies 2011. All rights reserved.

Page 15

Agenda  Semiconductor Business - an Overview

 Market Driven Innovations  New Challenges in Energy, Mobility and Security

 Hidden Innovations  300 MM Thin-Wafer Technology  Silicon Carbide  iRobotics – Cooperative Robotics in Production Lines

 Management Innovations  Creating a ‚Culture of Innovation‘  Enabling Innovations in Human Resource Management

Copyright © Infineon Technologies 2011. All rights reserved.

Page 16

Infineon – Worldwide R&D Network (Excluding Europe) Bejing

Milpitas

Seoul

Morgan Hill

Shanghai

Torrance

Singapore

Bangalore

Malacca

Copyright © Infineon Technologies 2011. All rights reserved.

Page 17

Infineon – R&D Network in Europe

Duisburg

Warstein

Dresden

Regensburg

Bristol

Linz

Augsburg

Graz

Munich, Neubiberg

Padova

Villach

Copyright © Infineon Technologies 2011. All rights reserved.

Bucharest Page 18

Villach Production Site Villach innovation fab Power semiconductors on 300mm thin-wafers 200

50

75

100

125

150

300

 Feasibility study: 300 mm thin-wafer manufacture for power semiconductors  First 300mm pilot line in the world in Villach/Austria

Focal area: Energy efficiency  Further development of thin-wafer technology raises efficiency  First large-scale manufacture in the world with 40µ wafer thickness

Copyright © Infineon Technologies 2011. All rights reserved.

Page 19

12.0

0.0

8.9

12.0

Thin-Wafer Technology Demand driven and Technology Push 7.18

Strictly confidential

6.80

Applications

6.20

5.00

lower power losses lower energy losses lower resistance

 Power supplies for computer and server  Power supplies for consumer electronics

Technologies

 Inductive cooking …

5.00

Demand driven:

 Speed-controlled motors, pumps

 Automotive

6.80 6.20

 Traction (trains)

 Lighting

7.18

 IGBT  Diodes

Wafer front side

 MOSFET (e.g. CoolMOS)  SPT (smart power technology) …

Manufacturing Competencies  Handling an ultra-thin-wafer

6.40

Technology Push 8.60 9.20

 Frontside and backside processing

6.40

 Equipment Engineering …

Copyright © Infineon Technologies 2011. All rights reserved.

8.60

Page 20

9.20

Energy savings enabled by Ultra-Thin-Wafer Technology Applications with TRENCHSTOP™ IGBT  Lower power losses  Lower energy losses

Inductive cooking Washing machines Dish washer Tumble dryer Air conditions Refrigerators

SuperJunction MOSFET  Lower resistance  Lower energy losses

LCD / Plasma TV Gaming consoles Lightning Laptop PC

Active PFC  Lower energy losses

LCD / Plasma TV Solar systems Lightning PC

SFET 5  Lower resistance  Lower energy losses

Notebook Gaming consoles Electric drives

Annual Savings per private Household

Copyright © Infineon Technologies 2011. All rights reserved.

Reduction of losses

Page 21

IGBTs – Semiconductor technology and special manufacturing expertise enable optimal power densities  IGBTs are used for switching high currents typically occurring in the inverter  Trench + field stop cells enable low switching losses and high robustness  The power losses are primarily determined by the thickness of the wafers used (ultrathin-wafers)  Changeover from 6” to 12” wafers will increase the IGBT area yield by 400%

Trench + field stop cell Emitter

Gate

down to 40µm ! n - base(substrate)

Collector

Larger silicon wafers X4.0 devices/ wafer

x1.7

12”

(future)

8”

6”

(2010)

Pdis ~ Waferthickness

(2005)

2

3” Copyright © Infineon Technologies 2011. All rights reserved.

Page 22

Power300 The first microelectronics manufacturer in the world In pursuing organic growth, Infineon focuses on 300mm POWER manufacturing technology  Strong growth in revenues of ~10% p.a. driven particularly by photovoltaics (IMM) and electrical drive (ATV) leads to significant increase of in-house production.  Area yield expected to increase by 400% compared to 150mm.  Start of pilot line for qualification in FY 2011 in Villach (~35‘€ Invest)

Energy-efficient products

 Technical challenges particularly ultra-thin-wafer handling and adaption of standard CMOS in power substrates.  Start of volume production in 300mm POWER within the next 2 to 3 years.

POWER300

& 100 125 1980 1985

150 1990

Copyright © Infineon Technologies 2011. All rights reserved.

200

2000

und

300 2010

Page 23

QPASS – Quick Personnel Safe Screening Cooperation Rohde & Schwarz and Infineon

Source: by courtesy of Rohde und Schwarz GmbH & Co. KG Copyright © Infineon Technologies 2011. All rights reserved.

Page 24

Summary of technical specifications  Fully electronic personnel scanner  Automatic detection of hidden objects  Center Frequency 77GHz, high bandwidth  Very high resolution in x,y,z  Dynamic range > 40 dB  3D dataset for automatic detection of hidden objects  RF-Output power much less than a Mobile phone

 Sensor  Active sparse array  3072 Tx and 3072 Rx SiGe-channels and antennas  Modular concept with arrays and clusters

Source: by courtesy of Rohde und Schwarz GmbH & Co. KG Copyright © Infineon Technologies 2011. All rights reserved.

Page 25

Silicon Carbide (SiC) – the ideal material for highly efficient power semiconductors Power Semiconductors

Physical properties of SiC

Conduction loss Switching loss

(400V DC, 200A, 8kHz)

 SiC switching elements are highly efficient, fast, able to function in high temperature and reliable.  SiC significantly extends the range of applications of power semiconductors (300 …

Example: SiC JFET Oxide (ILD)

AlCu

Ti

~ 2500V).

Mo Source

 The implementation of SiC products is a challenge (substrate size, crystal defects, transistor properties).

Gate

channel p-SiC topgate

Copyright © Infineon Technologies 2011. All rights reserved.

n-SiC drift layer

p-SiC buried gate

current

Drain Page 26

SiC: THE power semiconductor material of the future?  SiC enables loss-less switching  SiC power devices play a key role with respect to climate savings initiatives in power electronics  SiC power devices are mandatory to continue on Moore‘s law of power density increase (switching frequency , losses)

 SiC allows increase of physical ruggedness of power devices  SiC devices can withstand very high power densities due to thermal properties  SiC devices are still blocking at T>> 200°C  Attractive switching devices without Gate Oxide, the main „Achilles heel“ of MOSFETs and IGBT‘s are possible

 SiC breaks by far the physical limits of Si power devices (even the state of the art of compensation technology like CoolMOS)  This is a key lever for further miniaturization of power devices and allows a complete new group of best in class devices

Copyright © Infineon Technologies 2011. All rights reserved.

Page 27

SiC: The competitive material & market environment  Si  Cheap and close to perfect base material  tremendous manufacturing and application experience  So called „physical limits“ are already proven to be “permeable” by smart device design (e.g. CoolMOS)  Cost/performance gain has already started to slow down. Are we approaching the “wear out phase” of this very mature technology?

 GaN based  Power devices with high breakdown voltage (> 1000V) already demonstrated on GaNon-Si  Very large scientific community is in place for this material system (opto-electronics, RF)  Very high defect density, critical surface passivation and very sensitive manufacturing processes to generate 2D electron gas

SiC power devices offer a huge upside development potential compared to Si without the essential risks of GaN power technology! Copyright © Infineon Technologies 2011. All rights reserved.

Page 28

Physical Properties of Silicon Carbide 5 4,5 4

 High thermal stability (>> 500°C)

Si SiC

 Chemically stable

3,5 3

 Mechanically hard

2,5 2

 Radiation hard (excellent stability vs. cosmic radiation)

1,5 1 0,5 0 Band gap [eV]

Breakdown Thermal Field [MV/cm] Conductivity [W/cmK]

 Transparent  Not toxic

Silicon Carbide Ideal material for high-performance power electronics Copyright © Infineon Technologies 2011. All rights reserved.

Page 29

New approaches enable joint work between man and robots

Manu Inno fact va uring tion

Example: Kuka LBR 4+ lightweight robot

So far: Expensive safety devices keep man and robot apart!

Man-robot interaction combines:

New: “soft” robots permit man-robot interaction in the same workspace!

Fewer safety devices  Save space in the cleanroom

Human strengths (creativity, problem-solving, decisions, special tasks, flexibility, …)

 Reduce capital outlay  Enable access for engineers and operators without system stop

Human flexibility for innovation  Unusual special tasks  Special processes for innovation

Robot strengths

Robot efficiency for productivity

(performing simple, recurring tasks non stop) Copyright © Infineon Technologies 2011. All rights reserved.

Page 30

Man-robot interaction, using the iRobotics pilot project as an example

ld i B

r e

s s

e B

s e

Manu Inno fact va uring tion

Key data: •3 Kuka LBR-based loading systems load 11 Mattson process lines fully automatically

• Project duration: approx. 8 months

•Process line starts fully automatically

• System 3 prepared

•Box lids are opened and closed pneumatically

• ROI: 18-24 months

•Batch identification in the box nests by RFID (based on Infineon my-d chip)

• Improvements in

•Incoming and outgoing batch conveyance by operators

• Systems 1 and 2 undergoing productive test run

• quality • plant utilization • personnel efficiency

Copyright © Infineon Technologies 2011. All rights reserved.

Page 31

Agenda  Semiconductor Business - an Overview

 Market Driven Innovations  New Challenges in Energy, Mobility and Security

 Hidden Innovations  300 MM Thin-Wafer Technology  Silicon Carbide  iRobotics – Cooperative Robotics in Production Lines

 Management Innovations  Creating a ‚Culture of Innovation‘  Enabling Innovations in Human Resource Management

Copyright © Infineon Technologies 2011. All rights reserved.

Page 32

Creating a Culture of Innovation Leadership and target setting

Personnel and management development

Top-level expertise and innovation

Innovationmanagement &-culture

Copyright © Infineon Technologies 2011. All rights reserved.

Entering new markets with energy-efficient products

Page 33

We develop and practice an integrated innovation concept! Geared towards the strategic fields of innovation

Strategy

INNOVATION AWARDS

Innovation campaign 6 areas of action 2010

iCommunities INNOVATION DAY Innovation Fab

Research partnerships

Innovation culture

Innovation management annual circle

Innovation projects € 4.5 million

Employee Copyright © Infineon Technologies 2011. All rights reserved.

Page 34

IFAT Innovation Management Model Our annual cycle Control process 4 integrated paths:

The cultural path The creative path The “visibility” path The formal path IFAT innovation culture Results & goals

Economic prospects Copyright © Infineon Technologies 2011. All rights reserved.

Page 35

Innovative Personnel Management Future-proofing Austria as a business location – promoting innovation and increasing appeal Integration: Carinthian International Club (CIC) 

Cooperation between various Carinthian companies to facilitate the start and integration of international persons and their families

Women in Technology: Women encourage Women (WeW) 

From women in technology to women in technology – Development and support program for women in technical professions

Ensuring new recruits: Ö3-YPD Challenge, SEMI High Tech U 

Austria’s top companies provide the most exciting vacation placements – Hannes Jagerhofer initiative



The SEMI High Tech U (HTU) adopts a hands-on approach to introducing youngsters to the fascination of high tech

Employee Development 

Training offensive: foreman training, technical studies at University of Applied Sciences or qualification for university entrance



Junior Talent Program (JTP): 24-month trainee program for top graduates



Technical Training: Internal training program, experts train staff Copyright © Infineon Technologies 2011. All rights reserved.

Page 36

Our Vision: Expected Business Environment 2012 Business requirements for a continued market leadership in Power Management Application know-how above our customers.

Innovation Fab Leading edge technologies in own manufacturing facilities.

World-class interaction between application

& technology platforms in next

generation power semi (GaN, Sunny switch, etc).

Copyright © Infineon Technologies 2011. All rights reserved.

Page 37

„be different“ at-a-Glance Project Mission

 To foster key competencies of employees in application engineering, R&D, technical & product marketing jobs, supply chain management and manufacturing & process engineering

Target group:

   

Length

 From 6 up to max. 24 months (individually determined)

Roadmaps

 5 development platforms: R&D, application engineering, product marketing, supply chain mgmt and UPD/GP/SCM

Reporting structure

 Project sponsor: IFAT Vorstand  Steering Committe: A Urschitz, O Graf, T Neidhart, F Auerbach  Project Manager: V Bianco

Training structure

     

~20 employees Screened employees from PSD and OPP area Excellent performance demonstrated High predisposition to social skills

Structured individual “Einarbeitungsplan“ and “Patensystem” Internal training via technical ladder- and senior experts Functional training roadmap: application eng., product marketing On the job training Coaching via a mentoring program for selected people Informal learning opportunities: Business Leaders’ Exchange IFAT 2020 Strategy Dialogue, Executives lunches/“Kaminabend”. Copyright © Infineon Technologies 2011. All rights reserved.

Page 38

12.0

0.0

8.9

12.0

SEMI High Tech University About the Program 7.18

7.18

6.80

6.80

6.20

5.00

6.20

 SEMI (Semiconductor Equipment and Materials International) is a globally oriented industry association providing support for companies engaged in semiconductor manufacturing and related fields.

5.00

 In the interest of ensuring new recruits, SEMI developed the SEMI High Tech U(niversity) program - initiated in the USA – to stimulate the interest of scholars and teachers in science and technology and to point out career opportunities in the industry.  Technology is presented to scholars in a playful way so as to give a touch-and-feel experience, using modules adapted to age and interests. The SEMI HTU program consists of practical exercises which establish a link between high school mathematics, science and applications in the everyday world of industry. Examples of the offering cover topics from the areas of mathematics, statistics, basics of physics and chemistry, electronics or nanotechnology.  Since 2001 over 100 SEMI HTU programs have been conducted in the USA and Asia, and in 2007 for the first time in Europe. The first event in German-speaking countries was held at Infineon and Carinthia University of Applied Sciences in Villach in April 2008. The target group is scholars aged 13-14 years who are about to choose a career. 6.40

 You will find further information on the website www.semi.org

6.40

8.60 9.20

8.60

Copyright © Infineon Technologies 2011. All rights reserved.

Page 39

9.20

12.0

0.0

8.9

12.0

SEMI High Tech University Results (summary of events to date) 7.18

7.18

6.80

6.80

6.20

6.20

5.00

 25% - 40% of the scholars per event stated that their career plans had changed as a result of the SEMI HTU.

5.00

 All the scholars stated that taking part in the SEMI HTU had widened their knowledge of microelectronics. (knowledge enhanced by 130% to 200%)  99 % of the scholars stated that their expectations of the SEMI HTU had been met or exceeded. “I‘ll never forget this SEMI project and in many years’ time I‘ll look back on these two days with pleasure. The “SEMI High Tech U” project also changed my views on career choice. Since this project I‘m far more interested in electronics.” Feedback of one scholar

6.40

What was the best thing about the day?: “[…] that I now know that technical professions aren’t just for boys.” Feedback of one scholar

6.40

8.60 9.20

8.60

Copyright © Infineon Technologies 2011. All rights reserved.

Page 40

9.20

Hot Jobs@Infineon Austria www.infineon.com/careers Job Profiles

Automotive

■ Analog Design ■ Concept Engineering ■ Application Engineering ■ Digital Layout and Design ■ Firmware Design ■ Mixed-Signal Engineering ■ Product Engineering ■ Program Management ■ Test Engineering

Chipcard & Security

■ System Engineering ■ Mixed-Signal Design Engineering ■ Contactless System Engineering ■ Concept and Digital Design Engineering ■ Firmware Engineering ■ Marketing Management

Industrial & Multimarket

■ (Senior) Application Engineering ■ Analog and Mixed-Signal, Design ■ Layout and Circuit Design ■ Concept Engineering ■ Component Verification Engineering ■ Technology Development Engineering ■ Product Development Engineering ■ Test and Industrial Engineering ■ Product Marketing und Management

Operations & Technics

■ Quality Engineering ■ Industrial Engineering ■ Process Development Engineering ■ Test Engineering ■ Technology Engineering ■ SiC Technoloy Engineering Copyright © Infineon Technologies 2011. All rights reserved.

Open Positions

~ 25

Fields of Study For High Performers (f/m) from the areas:  Electrical Engineering  (Techn.) Physics  (Techn.) Chemistry

~ 25

 Microelectronics (and Sensor System)  Semiconductor and Microsystems Technology

~ 35

 Industrial Engineering  Information Technology  Materials Science

~ 35

 Metallurgy

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