UNISONIC TECHNOLOGIES CO., LTD 2N60L

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UNISONIC TECHNOLOGIES CO., LTD 2N60L

Power MOSFET

2A, 600V N-CHANNEL POWER MOSFET 

DESCRIPTION

The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.



FEATURES

* RDS(ON) < 5Ω @ VGS = 10V, ID =1A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness



SYMBOL

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2N60L 

Power MOSFET

ORDERING INFORMATION

Ordering Number Lead Free Halogen Free 2N60LL-TA3-T 2N60LG-TA3-T 2N60LL-TF1-T 2N60LG-TF1-T 2N60LL-TF2-T 2N60LG-TF2-T 2N60LL-TF3-T 2N60LG-TF3-T 2N60LL-TF3T-T 2N60LG-TF3T-T 2N60LL-TM3-T 2N60LG-TM3-T 2N60LL-TMA-T 2N60LG-TMA-T 2N60LL-TMS-T 2N60LG-TMS-T 2N60LL-TMS2-T 2N60LG-TMS2-T 2N60LL-TMS4-T 2N60LG-TMS4-T 2N60LL-TN3-R 2N60LG-TN3-R 2N60LL-TND-R 2N60LG-TND-R 2N60LL-T2Q-T 2N60LG-T2Q-T 2N60LL -T60-K 2N60LG-T60-K Note: Pin Assignment: G: Gate D: Drain S: Source



Package TO-220 TO-220F1 TO-220F2 TO-220F TO-220F3 TO-251 TO-251L TO-251S TO-251S2 TO-251S4 TO-252 TO-252D TO-262 TO-126

Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S

Packing Tube Tube Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel Tube Bulk

MARKING PACKAGE TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251L

MARKING

TO-251S TO-251S2 TO-251S4 TO-252 TO-252D TO-262

TO-126

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2N60L 

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A 2.0 A Continuous ID Drain Current Pulsed (Note 2) IDM 8.0 A 140 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 4.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262 54 W TO-220F/TO-220F1 23 W TO-220F3 TO-220F2 25 W Power Dissipation PD TO-251/TO-251L TO-251S/TO-251S2 44 W TO-251S4/TO-252 TO-252D TO-126 12.5 W Junction Temperature TJ +150 °С Ambient Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C



THERMAL DATA PARAMETER

Junction to Ambient

Junction to Case

PACKAGE TO-220/TO-220F TO-220F1/TO-220F2 TO-220F3/TO-262 TO-251/TO-251L TO-251S/TO-251S2 TO-251S4/TO-252 TO-252D TO-126 TO-220/TO-262 TO-220F/TO-220F1 TO-220F3 TO-220F2 TO-251/TO-251L TO-251S/TO-251S2 TO-251S4/TO-252 TO-252D TO-126

SYMBOL

UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw

RATINGS

UNIT

62.5

°С/W

100

°С/W

132 2.32

°С/W °С/W

5.5

°С/W

5

°С/W

2.87

°С/W

10

°С/W

θJA

θJC

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2N60L 

Power MOSFET

ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)

PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current

SYMBOL BVDSS IDSS

TEST CONDITIONS

VGS = 0V, ID = 250μA VDS = 600V, VGS = 0V Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS =25V, VGS =0V, Output Capacitance COSS f =1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) Turn-On Rise Time tR VDD =300V, ID =2.4A, RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=480V, VGS=10V, ID=2.4A Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM Reverse Recovery Time tRR VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs (Note1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw

MIN TYP MAX UNIT 600

V 10 μA 100 nA -100 nA 0.4 V/°С

2.0

4.0 5.0

V Ω

300 350 30 50 7 10

pF pF pF

30 25 70 30 30 8 10

60 60 90 60 40

ns ns ns ns nC nC nC

1.4 2.0 8.0

V A A ns μC

4.2

180 0.72

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Power MOSFET

TEST CIRCUITS AND WAVEFORMS

D.U.T.

+ VDS -

+ -

L

RG Driver VGS

VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test

Same Type as D.U.T.

Peak Diode Recovery dv/dt Test Circuit VGS (Driver)

Period

D=

P.W.

P. W. Period

VGS= 10V

IFM, Body Diode Forward Current ISD (D.U.T.)

di/dt IRM Body Diode Reverse Current

Body Diode Recovery dv/dt VDS (D.U.T.)

VDD

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw

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2N60L 

Power MOSFET

TEST CIRCUITS AND WAVEFORMS (Cont.)

VDS

90%

VGS

10% tD(ON)

tD(OFF) tF

tR

Switching Test Circuit

Switching Waveforms

VGS QG

10V QGS

QGD

Charge

Gate Charge Test Circuit

Gate Charge Waveform

BVDSS IAS

ID(t)

VDS(t)

VDD

tp

Unclamped Inductive Switching Test Circuit

UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw

Time

Unclamped Inductive Switching Waveforms

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2N60L

Power MOSFET

TYPICAL CHARACTERISTICS



Drain Current vs. Drain-Source Breakdown Voltage

250

Drain Current vs. Gate Threshold Voltage 300

Drain Current, ID (µA)

Drain Current, ID (µA)

300

200 150 100

250 200 150 100

50

50

0

0 0

Drain-Source On-State Resistance Characteristics

Drain Current, ID (A)

1.2 1.0 0.8 0.6 VGS=10V, ID=1A

0.4 0.2 0 0

2 4 6 8 10 Drain to Source Voltage, VDS (V)

Coutinuous Drain-Soarce Current, ISD (A)

0 200 600 800 100 400 Drain-Source Breakdown Voltage, BVDSS (V)

1 2 4 3 Gate Threshold Voltage, VTH (V)

5

Coutinuous Drain-Soarce Current vs. Source to Drain Voltage 2.4 2.0 1.6 1.2 0.8 0.4 0 0

0.3 0.6 0.9 1.2 1.5 Source to Drain Voltage, VSD (V)

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw

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